| High operating temperature midwave infrared photodiodes and focal plane arrays based on type-II InAs/GaSb superlattices SA Pour, EK Huang, G Chen, A Haddadi, BM Nguyen, M Razeghi Applied Physics Letters 98 (14), 2011 | 161 | 2011 |
| Background limited long wavelength infrared type-II InAs/GaSb superlattice photodiodes operating at 110 K BM Nguyen, D Hoffman, EK Huang, PY Delaunay, M Razeghi Applied Physics Letters 93 (12), 2008 | 131 | 2008 |
| Band edge tunability of M-structure for heterojunction design in Sb based type II superlattice photodiodes BM Nguyen, D Hoffman, PY Delaunay, EKW Huang, M Razeghi, ... Applied Physics Letters 93 (16), 163502-163502-3, 2008 | 118 | 2008 |
| Background limited performance of long wavelength infrared focal plane arrays fabricated from M-structure InAs–GaSb superlattices PY Delaunay, BM Nguyen, D Hoffman, EK Huang, M Razeghi IEEE Journal of Quantum Electronics 45 (2), 157-162, 2009 | 106 | 2009 |
| Surface leakage reduction in narrow band gap type-II antimonide-based superlattice photodiodes EK Huang, D Hoffman, BM Nguyen, PY Delaunay, M Razeghi Applied Physics Letters 94 (5), 2009 | 99 | 2009 |
| Advances in Antimonide-based Type-II Superlattices for Infrared Detection and Imaging at Center for Quantum Devices M Razeghi, A Haddadi, AM Hoang, EK Huang, G Chen, S Bogdanov, ... Infrared Physics & Technology, 2013 | 89 | 2013 |
| Demonstration of midinfrared type-II InAs/GaSb superlattice photodiodes grown on GaAs substrate BM Nguyen, D Hoffman, EK Huang, S Bogdanov, PY Delaunay, ... Applied Physics Letters 94 (22), 2009 | 82 | 2009 |
| Type-II InAs/GaSb photodiodes and focal plane arrays aimed at high operating temperatures M Razeghi, S Abdollahi Pour, EK Huang, G Chen, A Haddadi, ... Opto-Electronics Review 19 (3), 261-269, 2011 | 74 | 2011 |
| Elimination of surface leakage in gate controlled type-II InAs/GaSb mid-infrared photodetectors G Chen, BM Nguyen, AM Hoang, EK Huang, SR Darvish, M Razeghi Applied Physics Letters 99 (18), 2011 | 71 | 2011 |
| Type-II superlattice dual-band LWIR imager with M-barrier and Fabry–Perot resonance EK Huang, A Haddadi, G Chen, BM Nguyen, MA Hoang, R McClintock, ... Optics letters 36 (13), 2560-2562, 2011 | 66 | 2011 |
| Highly selective two-color mid-wave and long-wave infrared detector<? A3B2 show [pmg: line-break justify=" yes"/]?> hybrid based on Type-II superlattices EK Huang, MA Hoang, G Chen, S Ramezani-Darvish, ABA Haddadi, ... Optics letters 37 (22), 4744-4746, 2012 | 64 | 2012 |
| High quantum efficiency two color type-II InAs∕ GaSb nippin photodiodes PY Delaunay, BM Nguyen, D Hoffman, A Hood, EKW Huang, M Razeghi, ... Applied Physics Letters 92 (11), 2008 | 59 | 2008 |
| The effect of doping the M-barrier in very long-wave type-II InAs/GaSb heterodiodes D Hoffman, BM Nguyen, EK Huang, PY Delaunay, M Razeghi, MZ Tidrow, ... Applied Physics Letters 93 (3), 031107-031107-3, 2008 | 54 | 2008 |
| Recent advances in LWIR Type-II InAs/GaSb superlattice photodetectors and focal plane arrays at the center for quantum devices M Razeghi, D Hoffman, BM Nguyen, PY Delaunay, EK Huang, MZ Tidrow, ... Proceedings of the IEEE 97 (6), 1056-1066, 2009 | 52 | 2009 |
| Active and passive infrared imager based on short-wave and mid-wave type-II superlattice dual-band detectors EK Huang, A Haddadi, G Chen, AM Hoang, M Razeghi Optics Letters 38 (1), 22-24, 2013 | 36 | 2013 |
| High-operating temperature MWIR photon detectors based on Type II InAs / GaSb superlattice M Razeghi, BM Nguyen, PY Delaunay, SA Pour, EK Huang, P Manukar, ... Proceedings of SPIE, 76081Q, 2010 | 36 | 2010 |
| Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors G Chen, EK Huang, AM Hoang, S Bogdanov, SR Darvish, M Razeghi Applied Physics Letters 101 (21), 2012 | 35 | 2012 |
| Al x Ga 1−x N–based deep-ultraviolet 320 × 256 focal plane array E Cicek, Z Vashaei, EK Huang, R McClintock, M Razeghi Optics Letters 37 (5), 896-898, 2012 | 33 | 2012 |
| Photovoltaic MWIR type-II superlattice focal plane array on GaAs substrate EKW Huang, PY Delaunay, BM Nguyen, SA Pour, M Razeghi IEEE Journal of Quantum Electronics 46 (12), 1704-1708, 2010 | 32 | 2010 |
| Demonstration of high performance long wavelength infrared type II InAs/GaSb superlattice photodiode grown on GaAs substrate SA Pour, BM Nguyen, S Bogdanov, EK Huang, M Razeghi Applied Physics Letters 95 (17), 2009 | 32 | 2009 |
