| A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures MJ Lee, CB Lee, D Lee, SR Lee, M Chang, JH Hur, YB Kim, CJ Kim, ... Nature materials 10 (8), 625-630, 2011 | 2603 | 2011 |
| Reproducible resistance switching in polycrystalline NiO films S Seo, MJ Lee, DH Seo, EJ Jeoung, DS Suh, YS Joung, IK Yoo, ... Applied Physics Letters 85 (23), 5655-5657, 2004 | 1227 | 2004 |
| Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses IG Baek, MS Lee, S Seo, MJ Lee, DH Seo, DS Suh, JC Park, SO Park, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 860 | 2004 |
| Electrical observations of filamentary conductions for the resistive memory switching in NiO films DC Kim, S Seo, SE Ahn, DS Suh, MJ Lee, BH Park, IK Yoo, IG Baek, ... Applied physics letters 88 (20), 2006 | 689 | 2006 |
| Two series oxide resistors applicable to high speed and high density nonvolatile memory MJ Lee, Y Park, DS Suh, EH Lee, S Seo, DC Kim, R Jung, BS Kang, ... Advanced Materials 19 (22), 3919-3923, 2007 | 543 | 2007 |
| Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory MJ Lee, S Han, SH Jeon, BH Park, BS Kang, SE Ahn, KH Kim, CB Lee, ... Nano letters 9 (4), 1476-1481, 2009 | 515 | 2009 |
| In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure GS Park, YB Kim, SY Park, XS Li, S Heo, MJ Lee, M Chang, JH Kwon, ... Nature communications 4 (1), 2382, 2013 | 424 | 2013 |
| Random circuit breaker network model for unipolar resistance switching SC Chae, JS Lee, S Kim, SB Lee, SH Chang, C Liu, B Kahng, H Shin, ... Advanced Materials 20 (6), 1154-1159, 2008 | 389 | 2008 |
| Deterministic Two-Dimensional Polymorphism Growth of Hexagonal n-type SnS2 and Orthorhombic p-type SnS Crystals JH Ahn, MJ Lee, H Heo, JH Sung, K Kim, H Hwang, MH Jo Nano Letters, 2015 | 358 | 2015 |
| Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application IG Baek, DC Kim, MJ Lee, HJ Kim, EK Yim, MS Lee, JE Lee, SE Ahn, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 341 | 2005 |
| Observation of electric-field induced Ni filament channels in polycrystalline NiOx film GS Park, XS Li, DC Kim, RJ Jung, MJ Lee, S Seo Applied Physics Letters 91 (22), 2007 | 304 | 2007 |
| 2-stack 1D-1R cross-point structure with oxide diodes as switch elements for high density resistance RAM applications MJ Lee, Y Park, BS Kang, SE Ahn, C Lee, K Kim, W Xianyu, G Stefanovich, ... 2007 IEEE International Electron Devices Meeting, 771-774, 2007 | 294 | 2007 |
| Thermoelectric materials by using two-dimensional materials with negative correlation between electrical and thermal conductivity MJ Lee, JH Ahn, JH Sung, H Heo, SG Jeon, W Lee, JY Song, KH Hong, ... Nature Communications 7, 12011, 2016 | 293 | 2016 |
| Low‐temperature‐grown transition metal oxide based storage materials and oxide transistors for high‐density non‐volatile memory MJ Lee, SI Kim, CB Lee, H Yin, SE Ahn, BS Kang, KH Kim, JC Park, ... Advanced Functional Materials 19 (10), 1587-1593, 2009 | 288 | 2009 |
| A low‐temperature‐grown oxide diode as a new switch element for high‐density, nonvolatile memories MJ Lee, S Seo, DC Kim, SE Ahn, DH Seo, IK Yoo, IG Baek, DS Kim, ... Advanced Materials 19 (1), 73-76, 2007 | 283 | 2007 |
| Conductivity switching characteristics and reset currents in NiO films S Seo, MJ Lee, DH Seo, SK Choi, DS Suh, YS Joung, IK Yoo, IS Byun, ... Applied Physics Letters 86 (9), 2005 | 257 | 2005 |
| Improvement of resistive memory switching in NiO using IrO2 DC Kim, MJ Lee, SE Ahn, S Seo, JC Park, IK Yoo, IG Baek, HJ Kim, ... Applied physics letters 88 (23), 2006 | 250 | 2006 |
| Effects of metal electrodes on the resistive memory switching property of NiO thin films CB Lee, BS Kang, A Benayad, MJ Lee, SE Ahn, KH Kim, G Stefanovich, ... Applied Physics Letters 93 (4), 2008 | 237 | 2008 |
| Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications D Lee, H Choi, H Sim, D Choi, H Hwang, MJ Lee, SA Seo, IK Yoo IEEE electron device letters 26 (10), 719-721, 2005 | 227 | 2005 |
| Modeling for bipolar resistive memory switching in transition-metal oxides JH Hur, MJ Lee, CB Lee, YB Kim, CJ Kim Physical Review B—Condensed Matter and Materials Physics 82 (15), 155321, 2010 | 226 | 2010 |
David SeoStanford University or Samsung ElectronicsVerified email at kla.com
