| A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures MJ Lee, CB Lee, D Lee, SR Lee, M Chang, JH Hur, YB Kim, CJ Kim, ... Nature materials 10 (8), 625-630, 2011 | 2603 | 2011 |
| High performance amorphous oxide thin film transistors with self-aligned top-gate structure JC Park, SW Kim, SI Kim, H Yin, JH Hur, SH Jeon, SH Park, IH Song, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 626 | 2009 |
| Modeling for bipolar resistive memory switching in transition-metal oxides JH Hur, MJ Lee, CB Lee, YB Kim, CJ Kim Physical Review B—Condensed Matter and Materials Physics 82 (15), 155321, 2010 | 226 | 2010 |
| Bi-layered RRAM with unlimited endurance and extremely uniform switching YB Kim, SR Lee, D Lee, CB Lee, M Chang, JH Hur, MJ Lee, GS Park, ... 2011 Symposium on VLSI Technology-Digest of Technical Papers, 52-53, 2011 | 212 | 2011 |
| Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory SR Lee, YB Kim, M Chang, KM Kim, CB Lee, JH Hur, GS Park, D Lee, ... 2012 Symposium on VLSI Technology (VLSIT), 71-72, 2012 | 204 | 2012 |
| Write current reduction in transition metal oxide based resistance-change memory SE Ahn, MJ Lee, Y Park, BS Kang, CB Lee, KH Kim, S Seo, DS Suh, ... Advanced materials 20 (5), 924-928, 2008 | 188 | 2008 |
| A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory MJ Lee, D Lee, SH Cho, JH Hur, SM Lee, DH Seo, DS Kim, MS Yang, ... Nature communications 4 (1), 2629, 2013 | 184 | 2013 |
| 180nm gate length amorphous InGaZnO thin film transistor for high density image sensor applications S Jeon, S Park, I Song, JH Hur, J Park, S Kim, S Kim, H Yin, E Lee, S Ahn, ... 2010 International Electron Devices Meeting, 21.3. 1-21.3. 4, 2010 | 127 | 2010 |
| Highly uniform switching of tantalum embedded amorphous oxide using self-compliance bipolar resistive switching CB Lee, DS Lee, A Benayad, SR Lee, M Chang, MJ Lee, J Hur, YB Kim, ... IEEE Electron Device Letters 32 (3), 399-401, 2011 | 91 | 2011 |
| Electromigration effect of Ni electrodes on the resistive switching characteristics of NiO thin films CB Lee, BS Kang, MJ Lee, SE Ahn, G Stefanovich, WX Xianyu, KH Kim, ... Applied Physics Letters 91 (8), 2007 | 90 | 2007 |
| Nanometer-scale oxide thin film transistor with potential for high-density image sensor applications S Jeon, S Park, I Song, JH Hur, J Park, H Kim, S Kim, S Kim, H Yin, ... ACS Applied Materials & Interfaces 3 (1), 1-6, 2011 | 87 | 2011 |
| Modeling for multilevel switching in oxide-based bipolar resistive memory JH Hur, KM Kim, M Chang, SR Lee, D Lee, CB Lee, MJ Lee, YB Kim, ... Nanotechnology 23 (22), 225702, 2012 | 73 | 2012 |
| Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress S Lee, K Jeon, JH Park, S Kim, D Kong, DM Kim, DH Kim, S Kim, S Kim, ... Applied Physics Letters 95 (13), 2009 | 59 | 2009 |
| Resistive Switching in Solution-Processed Copper Oxide (CuxO) by Stoichiometry Tuning S Rehman, JH Hur, D Kim The Journal of Physical Chemistry C 122 (20), 11076-11085, 2018 | 54 | 2018 |
| Tuning of ionic mobility to improve the resistive switching behavior of Zn-doped CeO2 S Rehman, H Kim, M Farooq Khan, JH Hur, AD Lee, D Kim Scientific Reports 9 (1), 19387, 2019 | 49 | 2019 |
| Tunable resistive switching of vertical ReSe2/graphene hetero-structure enabled by Schottky barrier height and DUV light S Rehmana, H Kim, M Farooq, Khana, JH Hur, J Eom, Deok-keeKim Journal of Alloys and Compounds 855, 157310, 2021 | 48 | 2021 |
| First principles study of oxygen vacancy states in monoclinic ZrO2: Interpretation of conduction characteristics JH Hur, S Park, UI Chung Journal of Applied Physics 112 (11), 2012 | 46 | 2012 |
| The Influence of Hydrogen on Defects of In–Ga–Zn–O Semiconductor Thin-Film Transistors With Atomic-Layer Deposition of Al2O3 T Kim, Y Nam, JH Hur, SHK Park, S Jeon IEEE Electron Deive Letters 37 (9), 1131, 2016 | 45 | 2016 |
| Image sensor using light-sensitive transparent oxide semiconductor material SH Park, I Song, J Hur, SH Jeon US Patent 8,455,933, 2013 | 45 | 2013 |
| First principles study of oxygen vacancy activation energy barrier in zirconia-based resistive memory JH Hur Scientific Reports 10 (1), 5405, 2020 | 34 | 2020 |
