| Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius V Consonni, M Knelangen, L Geelhaar, A Trampert, H Riechert Phys. Rev. B 81 (8), 085310, 2010 | 201 | 2010 |
| Effects of hexamethylenetetramine on the nucleation and radial growth of ZnO nanowires by chemical bath deposition R Parize, J Garnier, O Chaix-Pluchery, C Verrier, E Appert, V Consonni The Journal of Physical Chemistry C 120 (9), 5242-5250, 2016 | 178 | 2016 |
| ZnO nanowires for solar cells: A comprehensive review V Consonni, J Briscoe, E Kärber, X Li, T Cossuet Nanotechnology 30 (36), 362001, 2019 | 167 | 2019 |
| Polarity in GaN and ZnO: Theory, measurement, growth, and devices J Zuniga-Perez, V Consonni, L Lymperakis, X Kong, A Trampert, ... Applied Physics Reviews 3 (4), 2016 | 163 | 2016 |
| Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer V Consonni, M Hanke, M Knelangen, L Geelhaar, A Trampert, H Riechert Physical Review B—Condensed Matter and Materials Physics 83 (3), 035310, 2011 | 155 | 2011 |
| Polarity in ZnO nanowires: A critical issue for piezotronic and piezoelectric devices V Consonni, AM Lord Nano Energy 83, 105789, 2021 | 143 | 2021 |
| In situ analysis of the crystallization process of Sb2S3 thin films by Raman scattering and X-ray diffraction R Parize, T Cossuet, O Chaix-Pluchery, H Roussel, E Appert, V Consonni Materials & Design 121, 1-10, 2017 | 126 | 2017 |
| Critical nucleation effects on the structural relationship between ZnO seed layer and nanowires S Guillemin, V Consonni, E Appert, E Puyoo, L Rapenne, H Roussel The Journal of Physical Chemistry C 116 (47), 25106-25111, 2012 | 124 | 2012 |
| Quantitative description for the growth rate of self-induced GaN nanowires V Consonni, VG Dubrovskii, A Trampert, L Geelhaar, H Riechert Physical Review B—Condensed Matter and Materials Physics 85 (15), 155313, 2012 | 123 | 2012 |
| Self‐induced growth of GaN nanowires by molecular beam epitaxy: A critical review of the formation mechanisms V Consonni physica status solidi (RRL)–Rapid Research Letters 7 (10), 699-712, 2013 | 116 | 2013 |
| Effects of nanowire coalescence on their structural and optical properties on a local scale V Consonni, M Knelangen, U Jahn, A Trampert, L Geelhaar, H Riechert Applied Physics Letters 95 (24), 2009 | 116 | 2009 |
| ZnO/CuCrO2 Core–Shell Nanowire Heterostructures for Self‐Powered UV Photodetectors with Fast Response T Cossuet, J Resende, L Rapenne, O Chaix‐Pluchery, C Jiménez, ... Advanced Functional Materials 28 (43), 1803142, 2018 | 105 | 2018 |
| Selective area growth of well-ordered ZnO nanowire arrays with controllable polarity V Consonni, E Sarigiannidou, E Appert, A Bocheux, S Guillemin, ... ACS nano 8 (5), 4761-4770, 2014 | 103 | 2014 |
| ZnO/TiO2/Sb2S3 Core–Shell Nanowire Heterostructure for Extremely Thin Absorber Solar Cells R Parize, A Katerski, I Gromyko, L Rapenne, H Roussel, E Kärber, ... The Journal of Physical Chemistry C 121 (18), 9672-9680, 2017 | 92 | 2017 |
| Formation mechanisms of ZnO nanowires: the crucial role of crystal orientation and polarity S Guillemin, L Rapenne, H Roussel, E Sarigiannidou, G Brémond, ... The Journal of Physical Chemistry C 117 (40), 20738-20745, 2013 | 91 | 2013 |
| Preferential orientation of fluorine-doped SnO2 thin films: The effects of growth temperature V Consonni, G Rey, H Roussel, B Doisneau, E Blanquet, D Bellet Acta materialia 61 (1), 22-31, 2013 | 90 | 2013 |
| Unpinning the Fermi level of GaN nanowires by ultraviolet radiation C Pfüller, O Brandt, F Grosse, T Flissikowski, C Chèze, V Consonni, ... Physical Review B—Condensed Matter and Materials Physics 82 (4), 045320, 2010 | 88 | 2010 |
| Electron scattering mechanisms in fluorine-doped SnO2 thin films G Rey, C Ternon, M Modreanu, X Mescot, V Consonni, D Bellet Journal of Applied Physics 114 (18), 2013 | 85 | 2013 |
| Physical properties of annealed ZnO nanowire/CuSCN heterojunctions for self-powered UV photodetectors J Garnier, R Parize, E Appert, O Chaix-Pluchery, A Kaminski-Cachopo, ... ACS applied materials & interfaces 7 (10), 5820-5829, 2015 | 81 | 2015 |
| Thickness effects on the texture development of fluorine-doped SnO2 thin films: The role of surface and strain energy V Consonni, G Rey, H Roussel, D Bellet Journal of Applied Physics 111 (3), 2012 | 78 | 2012 |
COSSUET ThomasLaboratoire des Matériaux et du Génie PhysiqueVerified email at grenoble-inp.fr
