| On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy J Ristić, E Calleja, S Fernández-Garrido, L Cerutti, A Trampert, U Jahn, ... Journal of crystal growth 310 (18), 4035-4045, 2008 | 238 | 2008 |
| Growth, morphology, and structural properties of group‐III‐nitride nanocolumns and nanodisks E Calleja, J Ristić, S Fernández‐Garrido, L Cerutti, MA Sánchez‐García, ... physica status solidi (b) 244 (8), 2816-2837, 2007 | 217 | 2007 |
| Wurtzite GaN nanocolumns grown on Si (001) by molecular beam epitaxy L Cerutti, J Ristić, S Fernández-Garrido, E Calleja, A Trampert, KH Ploog, ... Applied physics letters 88 (21), 2006 | 193 | 2006 |
| Green luminescence in Mg-doped GaN MA Reshchikov, D Demchenko, JD McNamara, S Fernández-Garrido, ... Physical Review B 90, 2014 | 175 | 2014 |
| Polarity in GaN and ZnO: Theory, measurement, growth, and devices J Zuniga-Perez, V Consonni, L Lymperakis, X Kong, A Trampert, ... Applied Physics Reviews 3 (4), 2016 | 163 | 2016 |
| A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si (111) S Fernández-Garrido, J Grandal, E Calleja, MA Sánchez-García, ... Journal of Applied Physics 106 (12), 126102, 2009 | 163 | 2009 |
| Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polarity S Fernández-Garrido, X Kong, T Gotschke, R Calarco, L Geelhaar, ... Nano Letters 12 (12), 6119-6125, 2012 | 143 | 2012 |
| In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction S Fernández-Garrido, G Koblmüller, E Calleja, JS Speck Journal of applied physics 104 (3), 2008 | 139 | 2008 |
| Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks A Bengoechea-Encabo, F Barbagini, S Fernandez-Garrido, J Grandal, ... Journal of Crystal Growth 325 (1), 89-92, 2011 | 137 | 2011 |
| Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy S Fernández-Garrido, VM Kaganer, KK Sabelfeld, T Gotschke, J Grandal, ... Nano Letters 13 (7), 3274-3280, 2013 | 132 | 2013 |
| In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001) GaN G Koblmüller, S Fernández-Garrido, E Calleja, JS Speck Applied Physics Letters 91 (16), 2007 | 125 | 2007 |
| Columnar AlGaN/GaN Nanocavities with AlN/GaN Bragg Reflectors Grown by Molecular Beam Epitaxy on Si (111) J Ristić, E Calleja, A Trampert, S Fernández-Garrido, C Rivera, U Jahn, ... Physical Review Letters 94 (14), 146102, 2005 | 105 | 2005 |
| Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil G Calabrese, P Corfdir, G Gao, C Pfüller, A Trampert, O Brandt, ... Applied Physics Letters 108 (20), 2016 | 97 | 2016 |
| High electron mobility GaN grown under N-rich conditions by plasma-assisted molecular beam epitaxy G Koblmüller, F Wu, T Mates, JS Speck, S Fernández-Garrido, E Calleja Applied Physics Letters 91 (22), 2007 | 93 | 2007 |
| Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene S Fernández-Garrido, M Ramsteiner, G Gao, LA Galves, B Sharma, ... Nano Letters 17 (9), 5213-5221, 2017 | 92 | 2017 |
| Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film M Wolz, C Hauswald, T Flissikowski, T Gotschke, S Fernández-Garrido, ... Nano Letters 15 (6), 3743-3747, 2015 | 92 | 2015 |
| Carrier-confinement effects in nanocolumnar GaN/AlxGa1−xN quantum disks grown by molecular-beam epitaxy J Ristić, C Rivera, E Calleja, S Fernández-Garrido, M Povoloskyi, ... Physical Review B—Condensed Matter and Materials Physics 72 (8), 085330, 2005 | 71 | 2005 |
| Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles S Fernández-Garrido, JK Zettler, L Geelhaar, O Brandt Nano Letters 15 (3), 1930-1937, 2015 | 66 | 2015 |
| A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy S Fernández-Garrido, Ž Gačević, E Calleja Applied Physics Letters 93 (19), 2008 | 66 | 2008 |
| A comprehensive diagram to grow (0001)InGaN alloys by molecular beam epitaxy Ž Gačević, VJ Gómez, NG Lepetit, PEDS Rodríguez, A Bengoechea, ... Journal of crystal growth 364, 123-127, 2013 | 63 | 2013 |
Oliver BrandtSenior scientist, Paul-Drude-Institut für FestkörperelektronikVerified email at pdi-berlin.de
