[go: up one dir, main page]

Follow
Daniel H Morris
Daniel H Morris
Other namesDaniel Morris
Verified email at intel.com
Title
Cited by
Cited by
Year
Tunnel field-effect transistors: Prospects and challenges
UE Avci, DH Morris, IA Young
IEEE Journal of the Electron Devices Society 3 (3), 88-95, 2015
6052015
Three-dimensional ferroelectric NOR-type memory
DH Morris, UE Avci, IA Young
US Patent 10,651,182, 2020
1892020
mLogic: Ultra-low voltage non-volatile logic circuits using STT-MTJ devices
D Morris, D Bromberg, JG Zhu, L Pileggi
Proceedings of the 49th Annual Design Automation Conference, 486-491, 2012
1112012
Design of Low Voltage Tunneling-FET Logic Circuits Considering Asymmetric Conduction Characteristics
DH Morris, UE Avci, R Rios, IA Young
IEEE, 2014
1082014
Energy efficiency comparison of nanowire heterojunction TFET and Si MOSFET at Lg=13nm, including P-TFET and variation considerations
UE Avci, DH Morris, S Hasan, R Kotlyar, R Kim, R Rios, DE Nikonov, ...
Electron Devices Meeting (IEDM), 2013 IEEE International, 33.4. 1-33.4. 4, 2013
952013
Novel STT-MTJ device enabling all-metallic logic circuits
DM Bromberg, DH Morris, L Pileggi, JG Zhu
IEEE Transactions on Magnetics 48 (11), 3215-3218, 2012
832012
Field Effect Transistors Having Ferroelectric or Antiferroelectric Gate Dielectric Structure
S Kim, UE Avci, JM Howard, IA Young, DH Morris
US Patent 11,735,652, 2023
662023
System-Level Design and Integration of a Prototype AR/VR Hardware Featuring a Custom Low-Power DNN Accelerator Chip in 7nm Technology for Codec Avatars
HE Sumbul, TF Wu, Y Li, SS Sarwar, W Koven, E Murphy-Trotzky, X Cai, ...
2022 IEEE Custom Integrated Circuits Conference (CICC), 01-08, 2022
522022
Study of TFET non-ideality effects for determination of geometry and defect density requirements for sub-60mV/dec Ge TFET
UE Avci, B Chu-Kung, A Agrawal, G Dewey, V Le, R Rios, DH Morris, ...
2015 IEEE International Electron Devices Meeting (IEDM), 34.5. 1-34.5. 4, 2015
522015
Bonding interface for hybrid TFT-based micro display projector
DH Morris, J Goward, CAM Fabien, M Grundmann
US Patent 11,349,052, 2022
462022
Macro-pixel display backplane
DH Morris, M Yee
US Patent 11,521,543, 2022
392022
Design and manufacturability tradeoffs in unidirectional and bidirectional standard cell layouts in 14 nm node
K Vaidyanathan, SH Ng, D Morris, N Lafferty, L Liebmann, M Bender, ...
Design for Manufacturability through Design-Process Integration VI 8327, 83270K, 2012
372012
Real time stiffness display interface device for perception of virtual soft object
A Song, D Morris, JE Colgate, MA Peshkin
2005 IEEE/RSJ International Conference on Intelligent Robots and Systems …, 2005
322005
Tunneling field effect transistors: Device and circuit considerations for energy efficient logic opportunities
IA Young, UE Avci, DH Morris
2015 IEEE International Electron Devices Meeting (IEDM), 22.1. 1-22.1. 4, 2015
302015
Configurable interconnect apparatus and method
K Vaidyanathan, DH Morris, UE Avci, IA Young, T Karnik, H Liu
US Patent 10,261,923, 2019
27*2019
Design of embedded memory and logic based on pattern constructs
D Morris, K Vaidyanathan, N Lafferty, K Lai, L Liebmann, L Pileggi
2011 Symposium on VLSI Technology-Digest of Technical Papers, 104-105, 2011
262011
Variation-tolerant dense TFET memory with low VMIN matching low-voltage TFET logic
DH Morris, UE Avci, IA Young
2015 Symposium on VLSI Technology (VLSI Technology), T24-T25, 2015
252015
Enabling application-specific integrated circuits on limited pattern constructs
D Morris, V Rovner, L Pileggi, A Strojwas, K Vaidyanathan
2010 Symposium on VLSI Technology, 139-140, 2010
252010
Ferroelectric based memory cell with non-volatile retention
DH Morris, UE Avci, IA Young
US Patent 10,573,385, 2020
242020
Synchronous Circuit Design With Beyond-CMOS Magnetoelectric Spin–Orbit Devices Toward 100-mV Logic
H Liu, S Manipatruni, DH Morris, K Vaidyanathan, DE Nikonov, T Karnik, ...
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 5 …, 2019
232019
The system can't perform the operation now. Try again later.
Articles 1–20