| Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures O Ambacher, J Smart, JR Shealy, NG Weimann, K Chu, M Murphy, ... Journal of applied physics 85 (6), 3222-3233, 1999 | 3990 | 1999 |
| Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures O Ambacher, B Foutz, J Smart, JR Shealy, NG Weimann, K Chu, ... Journal of applied physics 87 (1), 334-344, 2000 | 2306 | 2000 |
| Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study M Stutzmann, WB Jackson, CC Tsai Physical Review B 32 (1), 23, 1985 | 1595 | 1985 |
| Pyroelectric properties ofAl (In) GaN/GaN hetero-and quantum well structures O Ambacher, J Majewski, C Miskys, A Link, M Hermann, M Eickhoff, ... Journal of physics: condensed matter 14 (13), 3399, 2002 | 1494 | 2002 |
| The origin of visible luminescencefrom “porous silicon”: A new interpretation MS Brandt, HD Fuchs, M Stutzmann, J Weber, M Cardona Solid State Communications 81 (4), 307-312, 1992 | 1148* | 1992 |
| Optical constants of epitaxial AlGaN films and their temperature dependence D Brunner, H Angerer, E Bustarret, F Freudenberg, R Höpler, R Dimitrov, ... Journal of applied physics 82 (10), 5090-5096, 1997 | 827 | 1997 |
| Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry T Metzger, R Höpler, E Born, O Ambacher, M Stutzmann, R Stömmer, ... Philosophical magazine A 77 (4), 1013-1025, 1998 | 688 | 1998 |
| Protein-modified nanocrystalline diamond thin films for biosensor applications A Härtl, E Schmich, JA Garrido, J Hernando, SCR Catharino, S Walter, ... Nature materials 3 (10), 736-742, 2004 | 666 | 2004 |
| Black nonreflecting silicon surfaces for solar cells S Koynov, MS Brandt, M Stutzmann Applied physics letters 88 (20), 2006 | 598 | 2006 |
| Chemical control of the charge state of nitrogen-vacancy centers in diamond MV Hauf, B Grotz, B Naydenov, M Dankerl, S Pezzagna, J Meijer, ... Physical Review B—Condensed Matter and Materials Physics 83 (8), 081304, 2011 | 480 | 2011 |
| The defect density in amorphous silicon M Stutzmann Philosophical Magazine B 60 (4), 531-546, 1989 | 463 | 1989 |
| Determination of the Al mole fraction and the band gap bowing of epitaxial films H Angerer, D Brunner, F Freudenberg, O Ambacher, M Stutzmann, ... Applied Physics Letters 71 (11), 1504-1506, 1997 | 430 | 1997 |
| Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced liftoff MKKMK Kelly, RPVRP Vaudo, VMPVM Phanse, LGL Görgens, ... Japanese journal of applied physics 38 (3A), L217, 1999 | 426 | 1999 |
| Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition O Ambacher, MS Brandt, R Dimitrov, T Metzger, M Stutzmann, RA Fischer, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996 | 412 | 1996 |
| pH response of GaN surfaces and its application for pH-sensitive field-effect transistors G Steinhoff, M Hermann, WJ Schaff, LF Eastman, M Stutzmann, M Eickhoff Applied Physics Letters 83 (1), 177-179, 2003 | 381 | 2003 |
| Sound velocity of thin films obtained by surface acoustic-wave measurements C Deger, E Born, H Angerer, O Ambacher, M Stutzmann, J Hornsteiner, ... Applied Physics Letters 72 (19), 2400-2402, 1998 | 380 | 1998 |
| Detailed investigation of doping in hydrogenated amorphous silicon and germanium M Stutzmann, DK Biegelsen, RA Street Physical Review B 35 (11), 5666, 1987 | 371 | 1987 |
| Charge state manipulation of qubits in diamond B Grotz, MV Hauf, M Dankerl, B Naydenov, S Pezzagna, J Meijer, ... Nature communications 3 (1), 729, 2012 | 328 | 2012 |
| Electronic and optical properties of boron-doped nanocrystalline diamond films W Gajewski, P Achatz, OA Williams, K Haenen, E Bustarret, M Stutzmann, ... Physical Review B—Condensed Matter and Materials Physics 79 (4), 045206, 2009 | 316 | 2009 |
| Graphene transistor arrays for recording action potentials from electrogenic cells LH Hess, M Jansen, V Maybeck, MV Hauf, M Seifert, M Stutzmann, ... Advanced Materials 23 (43), 5045, 2011 | 307 | 2011 |
Oliver AmbacherGips-Schüle-Professur für Leistungselektronik, Universität FreiburgVerified email at inatech.uni-freiburg.de
