| The hydrogen content of a-Ge: H and a-Si: H as determined by IR spectroscopy, gas evolution and nuclear reaction techniques CJ Fang, KJ Gruntz, L Ley, M Cardona, FJ Demond, G Müller, S Kalbitzer Journal of Non-Crystalline Solids 35, 255-260, 1980 | 938* | 1980 |
| Gas-kinetic interactions of nitrous oxides with SnO2 surfaces B Ruhland, T Becker, G Müller Sensors and Actuators B: Chemical 50 (1), 85-94, 1998 | 340 | 1998 |
| Hydrogen response mechanism of Pt–GaN Schottky diodes J Schalwig, G Müller, U Karrer, M Eickhoff, O Ambacher, M Stutzmann, ... Applied Physics Letters 80 (7), 1222-1224, 2002 | 286 | 2002 |
| Gas sensitive GaN/AlGaN-heterostructures J Schalwig, G Müller, M Eickhoff, O Ambacher, M Stutzmann Sensors and Actuators B: Chemical 87 (3), 425-430, 2002 | 283 | 2002 |
| GaN-based heterostructures for sensor applications M Stutzmann, G Steinhoff, M Eickhoff, O Ambacher, CE Nebel, J Schalwig, ... Diamond and related materials 11 (3-6), 886-891, 2002 | 252 | 2002 |
| A rate equation approach to the gas sensitivity of thin film metal oxide materials S Ahlers, G Müller, T Doll Sensors and Actuators B: Chemical 107 (2), 587-599, 2005 | 225 | 2005 |
| Gas sensing properties of thin-and thick-film tin-oxide materials T Becker, S Ahlers, CB Braunmühl, G Müller, O Kiesewetter Sensors and Actuators B: Chemical 77 (1-2), 55-61, 2001 | 206 | 2001 |
| Group‐III‐nitride based gas sensing devices J Schalwig, G Müller, O Ambacher, M Stutzmann physica status solidi (a) 185 (1), 39-45, 2001 | 206 | 2001 |
| High‐electron‐mobility AlGaN/GaN transistors (HEMTs) for fluid monitoring applications R Neuberger, G Müller, O Ambacher, M Stutzmann physica status solidi (a) 185 (1), 85-89, 2001 | 176 | 2001 |
| Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures–Part B: Sensor applications M Eickhoff, J Schalwig, G Steinhoff, O Weidemann, L Görgens, ... physica status solidi (c), 1908-1918, 2003 | 167 | 2003 |
| Air pollution monitoring using tin-oxide-based microreactor systems T Becker, ST Mühlberger, CB Braunmühl, G Müller, T Ziemann, ... Sensors and Actuators B: Chemical 69 (1-2), 108-119, 2000 | 154 | 2000 |
| Silicon hotplates for metal oxide gas sensor elements G Sberveglieri, W Hellmich, G Müller Microsystem Technologies 3 (4), 183-190, 1997 | 141 | 1997 |
| Group III-nitride-based gas sensors for combustion monitoring J Schalwig, G Müller, M Eickhoff, O Ambacher, M Stutzmann Materials Science and Engineering: B 93 (1-3), 207-214, 2002 | 137 | 2002 |
| Optical pressure sensor based on a Mach-Zehnder interferometer integrated with a lateral a-Si: H pin photodiode C Wagner, J Frankenberger, PP Deimel IEEE photonics technology letters 5 (10), 1257-1259, 2002 | 135* | 2002 |
| SiC for sensors and high-temperature electronics G Müller, G Krötz, E Niemann Sensors and Actuators A: Physical 43 (1-3), 259-268, 1994 | 125 | 1994 |
| High-temperature MEMS heater platforms: Long-term performance of metal and semiconductor heater materials J Spannhake, O Schulz, A Helwig, A Krenkow, G Müller, T Doll Sensors 6 (4), 405-419, 2006 | 119 | 2006 |
| Response mechanism of SiC-based MOS field-effect gas sensors J Schalwig, P Kreisl, S Ahlers, G Muller IEEE Sensors Journal 2 (5), 394-402, 2002 | 108 | 2002 |
| A chemical-bond approach to doping, compensation and photo-induced degradation in amorphous silicon G Müller, S Kalbitzer, H Mannsperger Applied Physics A 39 (4), 243-250, 1986 | 107 | 1986 |
| The effects of ion implantation on the electrical properties of amorphous silicon S Kalbitzer, G Müller, PG Le Comber, WE Spear Philosophical Magazine B 41 (4), 439-456, 1980 | 107 | 1980 |
| Contribution of defects to electronic, structural, and thermodynamic properties of amorphous silicon PA Stolk, FW Saris, AJM Berntsen, WF Weg, LT Sealy, RC Barklie, G Krötz, ... Journal of Applied Physics 75 (11), 7266-7286, 1994 | 101 | 1994 |
Martin EickhoffInstitut für Festkörperphysik, Universität BremenVerified email at ifp.uni-bremen.de
