| Giant Spin-Orbit Bowing in B Fluegel, S Francoeur, A Mascarenhas, S Tixier, EC Young, T Tiedje Physical review letters 97 (6), 067205, 2006 | 524 | 2006 |
| Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices RM Farrell, EC Young, F Wu, SP DenBaars, JS Speck Semiconductor Science and Technology 27 (2), 024001, 2012 | 316 | 2012 |
| Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy AE Romanov, EC Young, F Wu, A Tyagi, CS Gallinat, S Nakamura, ... Journal of Applied Physics 109 (10), 2011 | 200 | 2011 |
| Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact JT Leonard, EC Young, DA Cohen, BP Yonkee, T Margalith, ... Applied Physics Letters 107 (9), 091105, 2015 | 181 | 2015 |
| Electron mobility in dilute GaAs bismide and nitride alloys measured by time-resolved terahertz spectroscopy DG Cooke, FA Hegmann, EC Young, T Tiedje Applied physics letters 89 (12), 2006 | 168 | 2006 |
| Hybrid tunnel junction contacts to III–nitride light-emitting diodes EC Young, BP Yonkee, F Wu, SH Oh, SP DenBaars, S Nakamura, ... Applied Physics Express 9 (2), 022102, 2016 | 160 | 2016 |
| Surfactant enhanced growth of GaNAs and InGaNAs using bismuth S Tixier, M Adamcyk, EC Young, JH Schmid, T Tiedje Journal of crystal growth 251 (1-4), 449-454, 2003 | 158 | 2003 |
| Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al, In) GaN epitaxial layers grown on semipolar (112¯ 2) GaN free standing substrates A Tyagi, F Wu, EC Young, A Chakraborty, H Ohta, R Bhat, K Fujito, ... Applied Physics Letters 95 (25), 2009 | 135 | 2009 |
| Basal plane stacking-fault related anisotropy in X-ray rocking curve widths of m-plane GaN MB McLaurin, A Hirai, E Young, F Wu, JS Speck Japanese journal of applied physics 47 (7R), 5429, 2008 | 130 | 2008 |
| Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy DA Browne, EC Young, JR Lang, CA Hurni, JS Speck Journal of Vacuum Science & Technology A 30 (4), 2012 | 115 | 2012 |
| Bismuth surfactant growth of the dilute nitride GaNxAs1− x EC Young, S Tixier, T Tiedje Journal of crystal growth 279 (3-4), 316-320, 2005 | 113 | 2005 |
| Influence of bismuth incorporation on the valence and conduction band edges of GaAs1− xBix G Pettinari, A Polimeni, M Capizzi, JH Blokland, PCM Christianen, ... Applied Physics Letters 92 (26), 2008 | 106 | 2008 |
| Lattice tilt and misfit dislocations in (1122) semipolar GaN heteroepitaxy EC Young, F Wu, AE Romanov, A Tyagi, CS Gallinat, SP DenBaars, ... Applied physics express 3 (1), 011004, 2010 | 104 | 2010 |
| Growth and properties of the dilute bismide semiconductor GaAs1− xBix a complementary alloy to the dilute nitrides T Tiedje, EC Young, A Mascarenhas International Journal of Nanotechnology 5 (9-12), 963-983, 2008 | 104 | 2008 |
| Bi isoelectronic impurities in GaAs S Francoeur, S Tixier, E Young, T Tiedje, A Mascarenhas Physical Review B—Condensed Matter and Materials Physics 77 (8), 085209, 2008 | 103 | 2008 |
| Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction BP Yonkee, EC Young, SP DenBaars, S Nakamura, JS Speck Applied Physics Letters 109, 191104, 2016 | 101 | 2016 |
| Band gaps of the dilute quaternary alloys GaNxAs1− x− yBiy and Ga1− yInyNxAs1− x S Tixier, SE Webster, EC Young, T Tiedje, S Francoeur, A Mascarenhas, ... Applied Physics Letters 86 (11), 2005 | 95 | 2005 |
| Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact BP Yonkee, EC Young, C Lee, JT Leonard, SP DenBaars, JS Speck, ... Optics Express 24 (7), 7816-7822, 2016 | 87 | 2016 |
| GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition SG Lee, CA Forman, C Lee, J Kearns, EC Young, JT Leonard, DA Cohen, ... Applied Physics Express 11 (6), 062703, 2018 | 86 | 2018 |
| Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface H Ohta, F Wu, A Tyagi, A Chakraborty, JS Speck, SP DenBaars, ... US Patent 9,159,553, 2015 | 85 | 2015 |
Jim SpeckProfessor of Materials, UCSBVerified email at ucsb.edu
