| AlGaN/GaN HEMTs-an overview of device operation and applications UK Mishra, P Parikh, YF Wu Proceedings of the IEEE 90 (6), 1022-1031, 2002 | 2900 | 2002 |
| GaN-based RF power devices and amplifiers UK Mishra, L Shen, TE Kazior, YF Wu Proceedings of the IEEE 96 (2), 287-305, 2008 | 2287 | 2008 |
| The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs R Vetury, NQ Zhang, S Keller, UK Mishra IEEE Transactions on electron devices 48 (3), 560-566, 2002 | 1887 | 2002 |
| Ultrawide‐bandgap semiconductors: research opportunities and challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ... Advanced Electronic Materials 4 (1), 1600501, 2018 | 1806 | 2018 |
| Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors JP Ibbetson, PT Fini, KD Ness, SP DenBaars, JS Speck, UK Mishra Applied Physics Letters 77 (2), 250-252, 2000 | 1534 | 2000 |
| 30-W/mm GaN HEMTs by field plate optimization YF Wu, A Saxler, M Moore, RP Smith, S Sheppard, PM Chavarkar, ... IEEE Electron Device Letters 25 (3), 117-119, 2004 | 1470 | 2004 |
| Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements JF Muth, JH Lee, IK Shmagin, RM Kolbas, HC Casey Jr, BP Keller, ... Applied physics letters 71 (18), 2572-2574, 1997 | 1005 | 1997 |
| “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells YH Cho, GH Gainer, AJ Fischer, JJ Song, S Keller, UK Mishra, ... Applied Physics Letters 73 (10), 1370-1372, 1998 | 911 | 1998 |
| Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors SF Chichibu, A Uedono, T Onuma, BA Haskell, A Chakraborty, T Koyama, ... Nature materials 5 (10), 810-816, 2006 | 888 | 2006 |
| Very-high power density algan/gan hemts YF Wu, D Kapolnek, JP Ibbetson, P Parikh, BP Keller, UK Mishra IEEE Transactions on Electron Devices 48 (3), 586-590, 2001 | 845 | 2001 |
| AlGaN/AlN/GaN high-power microwave HEMT L Shen, S Heikman, B Moran, R Coffie, NQ Zhang, D Buttari, ... IEEE Electron Device Letters 22 (10), 457-459, 2001 | 653 | 2001 |
| High-power AlGaN/GaN HEMTs for ka-band applications T Palacios, A Chakraborty, S Rajan, C Poblenz, S Keller, SP DenBaars, ... IEEE Electron device letters 26 (11), 781-783, 2005 | 652 | 2005 |
| Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy IP Smorchkova, CR Elsass, JP Ibbetson, R Vetury, B Heying, P Fini, ... Journal of applied physics 86 (8), 4520-4526, 1999 | 649 | 1999 |
| Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures SF Chichibu, AC Abare, MS Minsky, S Keller, SB Fleischer, JE Bowers, ... Applied Physics Letters 73 (14), 2006-2008, 1998 | 599 | 1998 |
| High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates Y Dora, A Chakraborty, L Mccarthy, S Keller, SP DenBaars, UK Mishra IEEE Electron Device Letters 27 (9), 713-715, 2006 | 595 | 2006 |
| Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate S Karmalkar, UK Mishra IEEE transactions on electron devices 48 (8), 1515-1521, 2002 | 592 | 2002 |
| Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays SP DenBaars, D Feezell, K Kelchner, S Pimputkar, CC Pan, CC Yen, ... Acta Materialia 61 (3), 945-951, 2013 | 567 | 2013 |
| High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap CJ Neufeld, NG Toledo, SC Cruz, M Iza, SP DenBaars, UK Mishra Applied Physics Letters 93 (14), 2008 | 564 | 2008 |
| Semiconductor device physics and design UK Mishra, J Singh Springer, 2008 | 545 | 2008 |
| Reverse side engineered III-nitride devices R Chu, U Mishra, RK Lal US Patent 8,389,977, 2013 | 535 | 2013 |
