| High-mobility BaSnO3 grown by oxide molecular beam epitaxy S Raghavan, T Schumann, H Kim, JY Zhang, TA Cain, S Stemmer Apl Materials 4 (1), 2016 | 270 | 2016 |
| Electrochemically tunable thermal conductivity of lithium cobalt oxide J Cho, MD Losego, HG Zhang, H Kim, J Zuo, I Petrov, DG Cahill, ... Nature communications 5 (1), 1-6, 2014 | 227 | 2014 |
| Observation of the Quantum Hall Effect in Confined Films of the Three-Dimensional Dirac Semimetal T Schumann, L Galletti, DA Kealhofer, H Kim, M Goyal, S Stemmer Physical review letters 120 (1), 016801, 2018 | 202 | 2018 |
| Demonstration of 4.7 kV breakdown voltage in NiO/β-Ga2O3 vertical rectifiers JS Li, CC Chiang, X Xia, TJ Yoo, F Ren, H Kim, SJ Pearton Applied Physics Letters 121 (4), 2022 | 126 | 2022 |
| Lattice and strain analysis of atomic resolution Z-contrast images based on template matching JM Zuo, AB Shah, H Kim, Y Meng, W Gao, JL Rouviére Ultramicroscopy 136, 50-60, 2014 | 105 | 2014 |
| Molecular beam epitaxy of Cd3As2 on a III-V substrate T Schumann, M Goyal, H Kim, S Stemmer APL Materials 4 (12), 2016 | 98 | 2016 |
| Structure and optical band gaps of (Ba, Sr) SnO3 films grown by molecular beam epitaxy T Schumann, S Raghavan, K Ahadi, H Kim, S Stemmer Journal of Vacuum Science & Technology A 34 (5), 2016 | 74 | 2016 |
| Breakdown up to 13.5 kV in NiO/β-Ga2O3 vertical heterojunction rectifiers JS Li, HH Wan, CC Chiang, TJ Yoo, MH Yu, F Ren, H Kim, YT Liao, ... ECS Journal of Solid State Science and Technology 13 (3), 035003, 2024 | 67 | 2024 |
| Direct Observation of Sr Vacancies in by Quantitative Scanning Transmission Electron Microscopy H Kim, JY Zhang, S Raghavan, S Stemmer Physical Review X 6 (4), 041063, 2016 | 67 | 2016 |
| Atomic resolution mapping of interfacial intermixing and segregation in InAs/GaSb superlattices: A correlative study H Kim, Y Meng, JL Rouviére, D Isheim, DN Seidman, JM Zuo Journal of applied physics 113 (10), 2013 | 63 | 2013 |
| Annealing temperature dependence of band alignment of NiO/β-Ga2O3 X Xia, JS Li, CC Chiang, TJ Yoo, F Ren, H Kim, SJ Pearton Journal of Physics D: Applied Physics 55 (38), 385105, 2022 | 56 | 2022 |
| Two-dimensional Dirac fermions in thin films of L Galletti, T Schumann, OF Shoron, M Goyal, DA Kealhofer, H Kim, ... Physical Review B 97 (11), 115132, 2018 | 55 | 2018 |
| Key role of lattice symmetry in the metal-insulator transition of NdNiO3 films JY Zhang, H Kim, E Mikheev, AJ Hauser, S Stemmer Scientific reports 6 (1), 23652, 2016 | 50 | 2016 |
| Al2O3 buffer in a ZnO thin film transistor with poly-4-vinylphenol dielectric S Bang, S Lee, S Jeon, S Kwon, W Jeong, H Kim, I Shin, HJ Chang, ... Semiconductor Science and Technology 24 (2), 025008, 2008 | 44 | 2008 |
| Atomic-scale characterization of structural damage and recovery in Sn ion-implanted β-Ga2O3 T Yoo, X Xia, F Ren, A Jacobs, MJ Tadjer, S Pearton, H Kim Applied Physics Letters 121 (7), 2022 | 42 | 2022 |
| Reproducible NiO/Ga2O3 Vertical Rectifiers with Breakdown Voltage > 8 kV JS Li, HH Wan, CC Chiang, X Xia, TJ Yoo, H Kim, F Ren, SJ Pearton Crystals 13 (6), 886, 2023 | 41 | 2023 |
| Spontaneous Hall effects in the electron system at the SmTiO3/EuTiO3 interface K Ahadi, H Kim, S Stemmer APL Materials 6 (5), 2018 | 35 | 2018 |
| Surface states of strained thin films of the Dirac semimetal M Goyal, H Kim, T Schumann, L Galletti, AA Burkov, S Stemmer Physical Review Materials 3 (6), 064204, 2019 | 31 | 2019 |
| Basal-plane growth of cadmium arsenide by molecular beam epitaxy DA Kealhofer, H Kim, T Schumann, M Goyal, L Galletti, S Stemmer Physical Review Materials 3 (3), 031201, 2019 | 29 | 2019 |
| Growth of strontium ruthenate films by hybrid molecular beam epitaxy PB Marshall, H Kim, K Ahadi, S Stemmer APL Materials 5 (9), 2017 | 25 | 2017 |
Stephen PeartonProfessor of Materials Science and Engineering, University of FloridaVerified email at mse.ufl.edu
