| A review of Ga2O3 materials, processing, and devices SJ Pearton, J Yang, PH Cary, F Ren, J Kim, MJ Tadjer, MA Mastro Applied Physics Reviews 5 (1), 2018 | 3324 | 2018 |
| GaN: Processing, defects, and devices SJ Pearton, JC Zolper, RJ Shul, F Ren Journal of applied physics 86 (1), 1-78, 1999 | 2389 | 1999 |
| Wide band gap ferromagnetic semiconductors and oxides SJ Pearton, CR Abernathy, ME Overberg, GT Thaler, DP Norton, ... Journal of Applied Physics 93 (1), 1-13, 2003 | 1239 | 2003 |
| Hydrogen-selective sensing at room temperature with ZnO nanorods HT Wang, BS Kang, F Ren, LC Tien, PW Sadik, DP Norton, SJ Pearton, ... Applied Physics Letters 86 (24), 2005 | 727 | 2005 |
| Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS SJ Pearton, F Ren, M Tadjer, J Kim Journal of Applied Physics 124 (22), 2018 | 723 | 2018 |
| Fabrication and performance of GaN electronic devices SJ Pearton, F Ren, AP Zhang, KP Lee Materials Science and Engineering: R: Reports 30 (3-6), 55-212, 2000 | 681 | 2000 |
| ZnO nanowire growth and devices YW Heo, DP Norton, LC Tien, Y Kwon, BS Kang, F Ren, SJ Pearton, ... Materials Science and Engineering: R: Reports 47 (1-2), 1-47, 2004 | 603 | 2004 |
| Perspective—opportunities and future directions for Ga2O3 MA Mastro, A Kuramata, J Calkins, J Kim, F Ren, SJ Pearton ECS Journal of Solid State Science and Technology 6 (5), P356, 2017 | 576 | 2017 |
| Site-specific growth of ZnO nanorods using catalysis-driven molecular-beam epitaxy YW Heo, V Varadarajan, M Kaufman, K Kim, DP Norton, F Ren, ... Applied physics letters 81 (16), 3046-3048, 2002 | 506 | 2002 |
| GaN-based diodes and transistors for chemical, gas, biological and pressure sensing SJ Pearton, BS Kang, S Kim, F Ren, BP Gila, CR Abernathy, J Lin, ... Journal of Physics: Condensed Matter 16 (29), R961, 2004 | 455 | 2004 |
| Ionizing radiation damage effects on GaN devices SJ Pearton, F Ren, E Patrick, ME Law, AY Polyakov ECS Journal of solid state science and technology 5 (2), Q35, 2015 | 444 | 2015 |
| Magnetic properties of n-GaMnN thin films GT Thaler, ME Overberg, B Gila, R Frazier, CR Abernathy, SJ Pearton, ... Applied Physics Letters 80 (21), 3964-3966, 2002 | 440 | 2002 |
| Hydrogen sensing at room temperature with Pt-coated ZnO thin films and nanorods LC Tien, PW Sadik, DP Norton, LF Voss, SJ Pearton, HT Wang, BS Kang, ... Applied Physics Letters 87 (22), 2005 | 362 | 2005 |
| A survey of ohmic contacts to III-V compound semiconductors AG Baca, F Ren, JC Zolper, RD Briggs, SJ Pearton Thin solid films 308, 599-606, 1997 | 344 | 1997 |
| Depletion-mode ZnO nanowire field-effect transistor YW Heo, LC Tien, Y Kwon, DP Norton, SJ Pearton, BS Kang, F Ren Applied Physics Letters 85 (12), 2274-2276, 2004 | 342 | 2004 |
| Recent advances in wide bandgap semiconductor biological and gas sensors SJ Pearton, F Ren, YL Wang, BH Chu, KH Chen, CY Chang, W Lim, J Lin, ... Progress in Materials Science 55 (1), 1-59, 2010 | 341 | 2010 |
| Epitaxial films of YBa/sub 2/Cu/sub 3/O/sub 7-//sub delta/on NdGaO/sub 3/, LaGaO/sub 3/, and SrTiO/sub 3/substrates deposited by laser ablation G Koren, A Gupta, EA Giess, A Segmueller, RB Laibowitz Appl. Phys. Lett.;(United States) 54 (11), 1989 | 336* | 1989 |
| Radiation damage effects in Ga 2 O 3 materials and devices J Kim, SJ Pearton, C Fares, J Yang, F Ren, S Kim, AY Polyakov Journal of Materials Chemistry C 7 (1), 10-24, 2019 | 310 | 2019 |
| GaN electronics SJ Pearton, F Ren Advanced Materials 12 (21), 1571-1580, 2000 | 296 | 2000 |
| Enantioselective arylative dearomatization of indoles via Pd-catalyzed intramolecular reductive Heck reactions C Shen, RR Liu, RJ Fan, YL Li, TF Xu, JR Gao, YX Jia Journal of the American Chemical Society 137 (15), 4936-4939, 2015 | 291 | 2015 |
Stephen PeartonProfessor of Materials Science and Engineering, University of FloridaVerified email at mse.ufl.edu
