WO2025238899A1 - Capacitor, electric circuit, circuit board, apparatus, and power storage device - Google Patents

Abstract

A capacitor 1a comprises: a base material 10, a first electrode 21; a dielectric layer 30; an oxide layer 35; and a second electrode 22. The dielectric layer 30 is disposed on the first electrode 21 and includes an antiferroelectric material. The oxide layer 35 is in contact with the dielectric layer 30. The second electrode 22 is in contact with the oxide layer 35. The dielectric layer 30 contains a first oxide containing at least one selected from the group consisting of Hf and Zr and at least one selected from the group consisting of Al, Ga, and Si. The oxide layer 35 contains a second oxide containing titanium.

Description

Capacitor, electric circuit, circuit board, equipment, and power storage device

This disclosure relates to capacitors, electrical circuits, circuit boards, equipment, and electricity storage devices.

It has been known that doping oxides containing Hf and Zr with certain elements can result in antiferroelectric properties.

For example, Non-Patent Document 1 describes that an Al- or Si-doped Hf _0.5 Zr _0.5 O ₂ (HZO) thin film exhibits antiferroelectric behavior.

P.D. Lomenzo et al., Applied Physics Letters, 2017, 110, 232904

The present disclosure provides a capacitor that is advantageous in terms of capacity and charge/discharge efficiency.

The capacitor of the present disclosure comprises:
A substrate;
a first electrode disposed on the substrate;
a dielectric layer disposed on the first electrode and including an antiferroelectric;
an oxide layer in contact with the dielectric layer;
a second electrode in contact with the oxide layer;
the dielectric layer includes a first oxide containing at least one selected from the group consisting of hafnium and zirconium, and at least one selected from the group consisting of aluminum, gallium, and silicon;
The oxide layer includes a second oxide containing titanium.

This disclosure provides a capacitor that is advantageous in terms of capacity and charge/discharge efficiency.

FIG. 1 is a cross-sectional view showing an example of a capacitor according to the present disclosure. FIG. 2 is a cross-sectional view showing another example of a capacitor according to the present disclosure. FIG. 3A is a diagram schematically illustrating an example of an electric circuit according to the present disclosure. FIG. 3B is a diagram schematically illustrating an example of a circuit board according to the present disclosure. FIG. 3C is a diagram schematically illustrating an example of the device of the present disclosure. FIG. 3D is a diagram schematically illustrating an example of an electricity storage device according to the present disclosure. FIG. 4 is a graph showing an X-ray diffraction (XRD) pattern of the dielectric layer according to Example 1. FIG. 5 is a graph showing the relationship between polarization and electric field strength in the capacitor according to Example 1. FIG. 6 is a graph showing the relationship between current density and electric field strength in the capacitor according to Example 1. FIG. 7 is a graph showing the relationship between polarization and electric field strength in the capacitor according to Comparative Example 1. In FIG. FIG. 8 is a graph showing the relationship between polarization and electric field strength in the capacitor according to Comparative Example 12. FIG. 9 is a graph showing the relationship between the molar ratio Al/(Hf+Zr+Al) and the molar ratio Zr/(Hf+Zr) in the dielectric layers according to the examples and comparative examples.

(Findings that form the basis of this disclosure)
When a voltage is applied to a capacitor having a dielectric layer containing an antiferroelectric, the amount of stored energy can increase nonlinearly with the electric field strength. In addition, when the electric field strength is reduced, a large portion of the energy stored in the capacitor can be released. For this reason, capacitors having a dielectric layer containing an antiferroelectric are expected to exhibit desired performance in terms of large-capacity energy storage and charge/discharge efficiency, and are considered promising for applications where use at high voltages is expected, for example.

When a voltage is applied to an antiferroelectric, the polarization of the antiferroelectric increases nonlinearly as the electric field strength increases. Subsequently, when the electric field strength is reduced and the applied voltage becomes zero, the remnant polarization of the antiferroelectric becomes zero. When a voltage is applied to a ferroelectric, the polarization of the ferroelectric increases nonlinearly as the electric field strength increases. Subsequently, when the electric field strength is reduced and the applied voltage becomes zero, the ferroelectric generates remnant polarization in the direction of the previous polarization. When a voltage is applied to a ferroelectric so as to generate polarization in the opposite direction to the remnant polarization, the electric field strength required for the polarization to increase nonlinearly tends to be large. When a voltage is applied to a paraelectric, the polarization of the paraelectric increases linearly even if the electric field strength increases.

According to the inventors' research, (Hf,Zr) _O2 dielectrics in which part of the Hf or Zr is replaced with other elements tend to contain a ferroelectric phase or a paraelectric phase in addition to an antiferroelectric phase. The notation (Hf,Zr) means that at least one element selected from the group consisting of Hf and Zr is included. The presence of a ferroelectric phase in a dielectric layer tends to generate remanent polarization, and the electric field strength corresponding to the nonlinear increase in polarization tends to increase. The presence of a paraelectric phase in a dielectric layer tends to reduce the maximum polarization. Therefore, it is difficult to say that a large volume of the ferroelectric phase and paraelectric phase contained in the dielectric layer of a capacitor is advantageous in terms of the capacitance and charge/discharge efficiency of the capacitor.

In light of these circumstances, the inventors conducted extensive research to determine whether it was possible to improve the capacity and charge/discharge efficiency of a capacitor equipped with a dielectric layer containing an oxide containing at least one element selected from the group consisting of Hf and Zr and other elements. After extensive trial and error, the inventors discovered that providing a specific oxide layer in contact with such a dielectric layer makes it easier to increase maximum polarization and reduce remanent polarization compared to when no oxide layer is present. Based on this new finding, the inventors believe that the capacity and charge/discharge efficiency of a capacitor are likely to be increased, and based on this new finding, they devised the capacitor disclosed herein.

(Embodiment)
Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. The present disclosure is not limited to the following embodiments.

1 is a cross-sectional view showing an example of a capacitor of the present disclosure. As shown in FIG. 1, capacitor 1a comprises a substrate 10, a first electrode 21, a dielectric layer 30, an oxide layer 35, and a second electrode 22. The first electrode 21 is disposed on the substrate 10. The dielectric layer 30 is disposed on the first electrode 21 and contains an antiferroelectric. The dielectric layer 30 is in contact with, for example, the first electrode 21. Another layer may be disposed between the dielectric layer 30 and the first electrode 21. The oxide layer 35 is in contact with the dielectric layer 30. The second electrode 22 is in contact with the oxide layer 35. The dielectric layer 30 is disposed between the first electrode 21 and the oxide layer 35 in the thickness direction of the dielectric layer 30. In other words, one major surface of the dielectric layer 30 is in contact with or close to the first electrode 21, and the other major surface of the dielectric layer 30 is in contact with the oxide layer 35. The dielectric layer 30 includes a first oxide containing at least one element selected from the group consisting of hafnium and zirconium, and at least one element selected from the group consisting of aluminum, gallium, and silicon. The oxide layer 35 is disposed between the dielectric layer 30 and the second electrode 22 in the thickness direction of the oxide layer 35. In other words, one main surface of the oxide layer 35 is in contact with the dielectric layer 30, and the other main surface of the oxide layer 35 is in contact with the second electrode 22. The oxide layer 35 includes a second oxide containing titanium.

Because the dielectric layer 30 is in contact with the oxide layer 35, the difference between the maximum polarization _Pmax and the remanent polarization Pr and the _ratio of the maximum polarization _Pmax to the remanent polarization _Pr tend to be larger in the capacitor 1a than when the oxide layer 35 is not present. Therefore, the capacitor 1a tends to have a higher capacity and a higher charge/discharge efficiency than when the oxide layer 35 is not present. The reason for this is unclear. It is thought that the dielectric layer 30 is in contact with the oxide layer 35, which tends to increase the amount of antiferroelectric material contained in the dielectric layer 30, making the above difference and ratio between the maximum polarization _Pmax and the remanent polarization _Pr larger.

Since the first oxide contained in the dielectric layer 30 contains the above elements, the energy at which an antiferroelectric phase is formed tends to be lower than the energy at which a paraelectric phase is formed and the energy at which a ferroelectric phase is formed. This tends to increase the amount of antiferroelectric phase contained in the dielectric layer 30. This is also thought to contribute to the tendency for the difference obtained by subtracting the remanent polarization _Pr from the maximum polarization _Pmax of the capacitor 1a and the ratio of the maximum polarization _Pmax to the remanent polarization _Pr to become large.

The first oxide preferably contains at least one element selected from the group consisting of aluminum and gallium. In this case, capacitor 1a is more likely to have a high capacity and high charge/discharge efficiency.

The relationship between the contents of the above elements in the dielectric layer 30 is not limited to a specific relationship. For example, the molar ratio r of the zirconium content to the sum of the hafnium content and the zirconium content in the dielectric layer 30, i.e. _{, Zr/(Hf+Zr)} , is, for example, 0 or greater and 1 or less. In addition, the molar ratio r _{(Al+Ga+Si)/(Hf+Zr+Al+Ga+Si)} in the dielectric layer 30 is, for example, greater than 0 and less than 0.08. In this case, the capacitor 1a is more likely to have a high capacity and high charge/discharge efficiency. The molar ratio r _{(Al+Ga+Si)/(Hf+Zr+Al+ Ga+Si} ) is the molar ratio of the sum S _Al+Ga+Si to the sum S _{Hf+Zr+Al+Ga+Si. The sum S Hf+Zr+Al+Ga+Si} is the sum of the hafnium content, zirconium content, aluminum content, gallium content, and silicon content in the dielectric layer 30 on a molar basis. The sum S _Al+Ga+Si is the sum of the aluminum content, the gallium content, and the silicon content, on a molar basis, in the dielectric layer 30. For example, the relationship between the contents of the above elements in the dielectric layer 30 may be determined according to methods such as X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray spectroscopy (EDX).

The molar ratio r _Zr/(Hf+Zr) is preferably greater than 0 and less than 1. In addition, the molar ratio r _{(Al+Ga+Si)/(Hf+Zr+Al+Ga+Si)} is preferably greater than 0 and less than 0.067. In this case, the electric field strength corresponding to the nonlinear increase in polarization tends to be low, and the capacitor 1a is more likely to have a high capacity and a high charge/discharge efficiency.

The molar ratio r _Zr/(Hf+Zr) may be, for example, 0.01 or more, 0.05 or more, 0.1 or more, 0.2 or more, or 0.25 or more, or may be 0.99 or less, 0.95 or less, 0.9 or less, 0.8 or less, or 0.75 or less. In addition, the molar ratio r _{(Al+Ga+Si)/(Hf+Zr+Al+Ga+Si)} may be 0.065 or less, 0.06 or less, or 0.05 or less. In this case, the electric field strength corresponding to the nonlinear increase in polarization is likely to be lower, and the capacitor 1a is likely to have high capacity and high charge/discharge efficiency.

The composition of the first oxide contained in the dielectric layer 30 is not limited to a specific composition, as long as it contains at least one element selected from the group consisting of Hf and Zr and at least one element selected from the group consisting of Al, Ga, and Si. The first oxide has a composition expressed, for example, as Hf _1-xy Zr _x A _y O _2±δ . In this composition, A is at least one element selected from the group consisting of Al, Ga, and Si. This composition satisfies, for example, the conditions 0≦x/(1−y)≦1 and 0<y<0.08. In this case, the capacitor 1a is more likely to have a high capacity and high charge/discharge efficiency.

The above composition preferably satisfies the conditions 0<x/(1-y)<1 and 0<y<0.067. In this case, the electric field strength corresponding to the nonlinear increase in polarization tends to be low, and capacitor 1a is more likely to have a high capacity and high charge/discharge efficiency.

In the above composition, x/(1-y) may be 0.01 or greater, 0.05 or greater, 0.1 or greater, 0.2 or greater, or 0.25 or greater, and may be 0.99 or less, 0.95 or less, 0.9 or less, 0.8 or less, or 0.75 or less. In addition, y may be 0.065 or less, 0.06 or less, or 0.05 or less. In this case, the electric field strength corresponding to the nonlinear increase in polarization is likely to be lower, and capacitor 1a is more likely to have a high capacity and high charge/discharge efficiency.

In the above composition, δ is not limited to a specific value. δ is, for example, a value required to maintain the electrical neutrality of the first oxide. For example, when the dielectric layer is produced by a vapor phase method, anion deficiency is likely to occur, leading to deviations from the stoichiometric ratio. In the above composition, for example, the condition 0.00≦δ≦0.07 is satisfied.

The dielectric layer 30 may be composed of a single phase or multiple phases.

The crystal structure contained in the dielectric layer 30 is not limited to a specific crystal structure. The dielectric layer 30 may contain, for example, a fluorite structure. In this case, the capacitor 1a is more likely to have a high capacity and high charge/discharge efficiency.

The dielectric layer 30 contains, for example, a tetragonal phase. In this case, the capacitor 1a is more likely to have a high capacity and high charge/discharge efficiency.

In the capacitor 1a, the difference P _max - P _r obtained by subtracting the remanent polarization P _r from the maximum polarization P _max is not limited to a specific value. The difference P _max - _{P r} is, for example, 10 μC/cm ² or more. In this case, the capacitor 1a is more likely to have a high capacity and a high charge/discharge efficiency.

In the capacitor 1a, the ratio P _max / _Pr of the maximum polarization P _max to the remanent polarization _Pr is not limited to a specific value. The ratio P _max / _Pr is, for example, equal to or greater than 7. In this case, the capacitor 1a is more likely to have a high capacity and a high charge/discharge efficiency.

In the capacitor 1a, the electric field strength E _T corresponding to the maximum value of the current density when the electric field strength is increased from 0 is not limited to a specific value. The electric field strength E _T is, for example, 5.0 MV/cm or less. The electric field strength E _T may be 4.5 MV/cm or less or 4.0 MV/cm or less.

The thickness of the dielectric layer 30 is not limited to a specific value. The thickness of the dielectric layer 30 is, for example, 5 nm or more and 200 nm or less. In this case, the capacitor 1a is more likely to have a high capacitance, and dielectric breakdown is less likely to occur even when the capacitor 1a is used at high voltages.

The thickness of the oxide layer 35 is not limited to a specific value. The thickness of the oxide layer 35 is preferably greater than 0 nm and less than 20 nm. In this case, the capacitor 1a is more likely to have a high capacity and high charge/discharge efficiency. The thickness of the oxide layer 35 may be 0.1 nm or more, 0.2 nm or more, or 0.5 nm or more, or may be 18 nm or less, 15 nm or less, or 12 nm or less. The thickness of the oxide layer 35 may be 20 nm. For example, the thickness of the oxide layer 35 is smaller than the thickness of the dielectric layer 30.

The second oxide contained in the oxide layer 35 is not limited to a specific composition as long as it contains titanium. The second oxide has a composition expressed, for example, as TiO2 _{± η} . In this case, the capacitor 1a is more likely to have a high capacity and high charge/discharge efficiency. In this composition, for example, the condition 0.00≦η≦0.1 is satisfied.

The material of the substrate 10 is not limited to a specific material. The substrate 10 may be a conductor, a semiconductor, or an insulator. The substrate 10 may contain, for example, at least one selected from the group consisting of aluminum, aluminum oxide, tantalum, tantalum oxide, niobium, niobium oxide, titanium, titanium oxide, hafnium, hafnium oxide, zirconium, zirconium oxide, zinc, zinc oxide, and silicon.

The material of the first electrode 21 is not limited to a specific material. The first electrode 21 may contain at least one material selected from the group consisting of aluminum, titanium nitride, titanium oxide, tantalum nitride, molybdenum, tungsten, tantalum, zirconium, hafnium, niobium, titanium, silicon, zinc oxide, indium oxide, tin oxide, single crystal silicon, and polysilicon, for example.

The thickness of the first electrode 21 is not limited to a specific value. The thickness of the first electrode 21 is, for example, 50 nm or more. This tends to reduce the internal resistance of the capacitor 1a. The thickness of the first electrode 21 is, for example, 500 nm or less. This tends to increase the overall capacitance density when multiple capacitors are integrated and used.

If the substrate 10 is a conductor, the substrate 10 and the first electrode 21 may be integrated.

The material of the second electrode 22 is not limited to a specific material. The second electrode 22 includes, for example, at least one selected from the group consisting of conductive polymers, manganese oxide, zinc oxide, indium oxide, tin oxide, titanium nitride, titanium oxide, tantalum nitride, electrolytes, and polysilicon.

The thickness of the second electrode 22 is not limited to a specific value. The thickness of the second electrode 22 is, for example, 50 nm or more. This tends to reduce the internal resistance of the capacitor 1a. The thickness of the second electrode 22 is, for example, 500 nm or less. This tends to increase the overall capacitance density when multiple capacitors are integrated and used.

An example of a method for manufacturing the capacitor 1a will now be described. First, a first electrode 21 is formed on the main surface of the substrate 10. The first electrode 21 can be formed by, for example, a vacuum process, plating, or coating. Examples of vacuum processes include direct current (DC) sputtering, radio frequency (RF) magnetron sputtering, pulsed laser deposition (PLD), atomic layer deposition (ALD), and chemical vapor deposition (CVD). Metal foils such as aluminum foil and zirconium foil may also be used as the substrate 10. In this case, the substrate 10 and the electrode 21 may be integrally formed.

Next, the dielectric layer 30 and the oxide layer 35 are formed. The method for forming the dielectric layer 30 is not limited to a specific method. The dielectric layer 30 can be formed by a vacuum process such as RF magnetron sputtering, PLD, ALD, and CVD. The dielectric layer 30 may also be formed by a wet process such as chemical solution deposition (CSD), a sol-gel method, and a hydrothermal method.

The method for forming the oxide layer 35 is not limited to a specific method. The oxide layer 35 can be formed by a vacuum process such as RF magnetron sputtering, PLD, ALD, and CVD. The oxide layer 35 may also be formed by a wet process such as CSD, a sol-gel method, and a hydrothermal method.

In forming the dielectric layer 30 and the oxide layer 35, the amorphous precursor of the dielectric layer 30 may be subjected to a heat treatment to promote crystallization of the dielectric layer 30. In this case, since the oxide layer 35 is in contact with the dielectric layer 30, the thermal stress generated in the dielectric layer 30 is adjusted to the desired state, making it easier to generate an antiferroelectric in the dielectric layer 30.

Next, the second electrode 22 is formed on the oxide layer 35. As with the formation of the first electrode 21, the second electrode 22 can be formed by a vacuum process, plating, or coating. In this manner, the capacitor 1a can be manufactured.

Figure 2 is a cross-sectional view showing another example of a capacitor disclosed herein. Capacitor 1b shown in Figure 2 is configured similarly to capacitor 1a, except for parts that will be specifically described. Components of capacitor 1b that are the same as or correspond to components of capacitor 1a are given the same reference numerals, and detailed descriptions will be omitted. The description of capacitor 1a also applies to capacitor 1b, unless technically inconsistent.

As shown in Figure 2, in capacitor 1b, at least a portion of first electrode 21 is porous. With this configuration, the surface area of first electrode 21 tends to be large, and the capacitance of capacitor 1b tends to be high. As a result, capacitor 1b is more likely to have a high capacitance. Such a porous structure can be formed, for example, by etching metal foil and sintering powder.

As shown in Figure 2, for example, a dielectric layer 30 film is formed on the surface of the porous portion of the first electrode 21, and an oxide layer 35 is formed between the dielectric layer 30 and the second electrode 22. In this case, chemical vapor deposition methods such as ALD, CVD, and mist CVD can be used to form the dielectric layer 30 and oxide layer 35.

In capacitor 1b, second electrode 22 includes, for example, conductor 22a and electrolyte 22b. For example, electrolyte 22b is disposed between first electrode 21 and conductor 22a. In capacitor 1b, electrolyte 22b is disposed, for example, so as to fill the voids around the porous portion of first electrode 21. Electrolyte 22b includes, for example, at least one selected from the group consisting of manganese oxide, an electrolytic solution, and a conductive polymer. Examples of conductive polymers include polypyrrole, polythiophene, polyaniline, and derivatives thereof. Electrolyte 22b may be a manganese compound such as manganese oxide. Electrolyte 22b may also include a solid electrolyte.

As shown in Figure 3A, for example, an electric circuit 3 including a capacitor 1a can be provided. The electric circuit 3 is not limited to a specific circuit as long as it includes a capacitor 1a. The electric circuit 3 may be an active circuit or a passive circuit. The electric circuit 3 may be a discharge circuit, a smoothing circuit, a decoupling circuit, or a coupling circuit. Because the electric circuit 3 includes capacitor 1a, the electric circuit 3 is more likely to have the desired characteristics. The electric circuit 3 may also include capacitor 1b instead of capacitor 1a.

As shown in Figure 3B, for example, a circuit board 5 including capacitor 1a can be provided. Because the circuit board 5 includes capacitor 1a, the design of the circuit board 5 is easy. For example, an electrical circuit 3 including capacitor 1a is formed on the circuit board 5. The circuit board 5 may also include capacitor 1b instead of capacitor 1a.

As shown in Figure 3C, for example, device 7 can be provided that includes capacitor 1a. Because device 7 includes capacitor 1a, device 7 is more likely to have the desired characteristics. For example, device 7 includes circuit board 5 that includes capacitor 1a. Device 7 is, for example, an information terminal such as a smartphone or tablet PC. Device 7 may also include capacitor 1b instead of capacitor 1a.

As shown in FIG. 3D, for example, a power storage device 9 including a capacitor 1a can be provided. Because the power storage device 9 includes capacitor 1a, the power storage device 9 is likely to have the desired characteristics. Using the power storage device 9, for example, a power storage system 50 can be provided. The power storage system 50 includes the power storage device 9 and a power generation device 2. In the power storage system 50, electricity generated by the power generation device 2 is stored in the power storage device 9. The power generation device 2 is, for example, a device for solar power generation or wind power generation. The power storage device 9 is, for example, a device including a lithium-ion battery or a lead-acid battery. The power storage device 9 may include capacitor 1b instead of capacitor 1a.

(Additional Note)
From the above description, the following techniques are disclosed.
(Technology 1)
A substrate;
a first electrode disposed on or integral with the substrate;
a dielectric layer disposed on the first electrode and including an antiferroelectric;
an oxide layer in contact with the dielectric layer;
a second electrode in contact with the oxide layer;
the dielectric layer includes a first oxide containing at least one selected from the group consisting of hafnium and zirconium, and at least one selected from the group consisting of aluminum, gallium, and silicon;
the oxide layer comprises a second oxide containing titanium;
Capacitor.
(Technology 2)
The first oxide contains at least one selected from the group consisting of aluminum and gallium.
The capacitor according to the first technique.
(Technology 3)
a molar ratio of the zirconium content to the sum of the hafnium content and the zirconium content in the dielectric layer is equal to or greater than 0 and equal to or less than 1,
a molar ratio of the sum of the aluminum content, the gallium content, and the silicon content to the sum of the hafnium content, the zirconium content, the aluminum content, the gallium content, and the silicon content in the dielectric layer is greater than 0 and less than 0.08;
The capacitor according to the first or second aspect of the present invention.
(Technology 4)
a molar ratio of the zirconium content to the sum of the hafnium content and the zirconium content in the dielectric layer is greater than 0 and less than 1;
a molar ratio of the sum of the aluminum content, the gallium content, and the silicon content to the sum of the hafnium content, the zirconium content, the aluminum content, the gallium content, and the silicon content in the dielectric layer is greater than 0 and less than 0.067;
The capacitor according to technology 3.
(Technology 5)
the first oxide has a composition represented by Hf _1-xy Zr _x A _y O _2±δ ,
In the above composition, A is at least one selected from the group consisting of aluminum, gallium, and silicon;
The composition satisfies the conditions 0≦x/(1−y)≦1 and 0<y<0.08.
5. The capacitor according to any one of the first to fourth aspects.
(Technology 6)
the composition further satisfies the conditions 0<x/(1-y)<1 and 0<y<0.067;
The capacitor according to technology 5.
(Technology 7)
The dielectric layer includes a fluorite structure.
7. The capacitor according to any one of claims 1 to 6.
(Technology 8)
The dielectric layer includes a tetragonal phase.
8. The capacitor according to any one of claims 1 to 7.
(Technology 9)
The oxide layer has a thickness greater than 0 nm and less than 20 nm.
9. The capacitor according to any one of claims 1 to 8.
(Technology 10)
The second oxide has a composition represented by TiO2 _{± η} ,
10. The capacitor according to any one of claims 1 to 9.
(Technology 11)
the substrate contains at least one selected from the group consisting of aluminum, aluminum oxide, tantalum, tantalum oxide, niobium, niobium oxide, titanium, titanium oxide, hafnium, hafnium oxide, zirconium, zirconium oxide, zinc, zinc oxide, and silicon;
11. The capacitor according to any one of claims 1 to 10.
(Technology 12)
the first electrode contains at least one selected from the group consisting of aluminum, titanium nitride, titanium oxide, tantalum nitride, molybdenum, tungsten, tantalum, zirconium, hafnium, niobium, titanium, silicon, zinc oxide, indium oxide, tin oxide, silicon single crystal, and polysilicon;
12. The capacitor according to any one of claims 1 to 11.
(Technology 13)
The substrate is electrically conductive and is integrated with the first electrode.
13. The capacitor according to any one of claims 1 to 12.
(Technology 14)
the second electrode includes at least one selected from the group consisting of a conductive polymer, manganese oxide, zinc oxide, indium oxide, tin oxide, titanium nitride, titanium oxide, tantalum nitride, an electrolyte, and polysilicon;
14. The capacitor according to any one of claims 1 to 13.
(Technology 15)
An electric circuit comprising the capacitor according to any one of techniques 1 to 14.
(Technology 16)
A circuit board comprising the capacitor according to any one of techniques 1 to 14.
(Technology 17)
A device comprising the capacitor according to any one of techniques 1 to 14.
(Technology 18)
An electricity storage device comprising the capacitor according to any one of techniques 1 to 14.

The present disclosure will be explained in more detail below using examples. Note that the following examples are illustrative, and the present disclosure is not limited to the following examples.

Example 1
A 50 nm thick Mo thin film was formed on a single-crystal substrate having a Si (100) surface by RF magnetron sputtering to obtain a first electrode. Next, a 20 nm thick dielectric layer having a composition of Hf _0.485 Zr _0.485 Al _0.03 O ₂ was formed on the first electrode by ALD. The composition of the dielectric layer was determined based on the ALD deposition conditions for forming the dielectric layer, with reference to the growth per cycle (GPC) values obtained when HfO ₂ , ZrO ₂ , and Al ₂ O ₃ were deposited by ALD. Next, a 1 nm thick oxide layer having a composition of TiO ₂ was formed on the dielectric layer by ALD. At this point, the dielectric layer was an amorphous paraelectric. Next, the laminate including the Si(100) single-crystal substrate, the first electrode, the dielectric layer, and the oxide layer was subjected to rapid thermal annealing (RTA), in which the laminate was heated in a nitrogen atmosphere at 500°C for 600 seconds. This heating process is believed to have partially transformed the structure of the dielectric layer from an amorphous to a tetragonal phase exhibiting antiferroelectricity, an orthorhombic phase exhibiting ferroelectricity, or a monoclinic phase exhibiting paraelectricity. A 150 nm-thick Au thin film was then formed on the oxide layer by vacuum deposition to obtain a second electrode. In this manner, the capacitor according to Example 1 was fabricated.

XRD measurements were performed on the sample obtained from the dielectric material of Example 1 using an X-ray diffraction (XRD) instrument, Aeris, manufactured by Malvern Panalytical. The results are shown in Figure 4. The vertical axis of Figure 4 represents the diffraction intensity in arbitrary units, and the horizontal axis represents the diffraction angle 2θ. In Figure 4, the notation "m" represents the diffraction angle 2θ corresponding to the monoclinic crystal, "o/t/c" represents the diffraction angle 2θ corresponding to the orthorhombic, tetragonal, or cubic crystal, and "sub." represents the diffraction angle corresponding to the substrate or first electrode layer.

Using a Radiant Technology Premier II ferroelectric tester, polarization-electric field (P-E) curve measurements and current density-electric field (J-E) curve measurements were performed on the capacitor according to Example 1. Based on these measurement results, the characteristics of the capacitor according to Example 1 were evaluated. FIG. 5 is a graph showing the relationship between polarization and electric field strength in the capacitor according to Example 1, illustrating the results of the P-E curve measurements. In FIG. 5, the vertical axis represents polarization, and the horizontal axis represents electric field strength. From the P-E curve, the maximum polarization P _max , which is the maximum value of polarization, and the remnant polarization P _{r ,} which is the polarization when the electric field strength decreases to zero, were determined. Then, the difference (P _max - P _r ) obtained by subtracting the remnant polarization P _r from the maximum polarization P _max and the ratio P _max /P _r of the maximum polarization P _max to the remnant polarization P _r were calculated. A large difference (P _max - P _r ) and a large ratio P _max /P _r are advantageous in terms of increasing the capacitance and charge/discharge efficiency of the capacitor.

FIG. 6 is a graph showing the relationship between current density and electric field strength in the capacitor according to Example 1, and shows the results of J-E curve measurement. In FIG. 6, the vertical axis represents current density, and the horizontal axis represents electric field strength. From the graph shown in FIG. 6, the electric field strength E _T corresponding to the maximum value of current density when the electric field strength is increased from 0 was identified. A small electric field strength E _T is advantageous from the viewpoint of increasing the capacitance and charge/discharge efficiency of the capacitor.

Example 2
A capacitor according to Example 2 was obtained in _the same manner as in Example 1, except that the ALD film formation conditions were adjusted so that the composition of the dielectric layer was _{Hf0.7275Zr0.2425Al0.03O2 .} P _- E curve and J-E curve measurements of the capacitor according to Example 2 were performed in the same manner as in Example 1, and the characteristics of the capacitor according to Example 2 were evaluated.

Example 3
A capacitor according to Example 3 was obtained in the same manner as in Example 1, except that the ALD film formation conditions were adjusted so that the composition of the dielectric layer was Hf _0.7125 Zr _0.2375 Al _0.05 O _2. P-E curve measurement and J-E curve measurement of the capacitor according to Example 3 were performed in the same manner as in Example 1, and the characteristics of the capacitor according to Example 3 were evaluated.

Example 4
A capacitor according to Example 4 was obtained in the same manner as in Example 1, except that the ALD film formation conditions were adjusted so that the composition of the dielectric layer was Hf _0.475 Zr _0.475 Al _0.05 O _2. P-E curve measurement and J-E curve measurement of the capacitor according to Example 4 were performed in the same manner as in Example 1, and the characteristics of the capacitor according to Example 4 were evaluated.

Example 5
A capacitor according to Example 5 was obtained in _the same manner as in Example 1, except that the ALD film formation conditions were adjusted so that the composition of the dielectric layer was _{Hf0.3904Zr0.5856Al0.024O2 .} P _- E curve measurement and J-E curve measurement of the capacitor according to Example 5 were performed in the same manner as in Example 1, and the characteristics of the capacitor according to Example 5 were evaluated.

Example 6
A capacitor according to Example 6 was obtained in _the same manner as in Example 1, except that the ALD film formation conditions were adjusted so that the composition of the dielectric layer was _{Hf0.2475Zr0.7425Al0.01O2 .} P _- E curve measurement and J-E curve measurement of the capacitor according to Example 6 were performed in the same manner as in Example 1, and the characteristics of the capacitor according to Example 6 were evaluated.

Example 7
A capacitor according to Example 7 was obtained in _the same manner as in Example 1, except that the ALD film formation conditions were adjusted so that the composition of the dielectric layer was _{Hf0.2425Zr0.7275Al0.03O2 .} P _- E curve measurement and J-E curve measurement of the capacitor according to Example 7 were performed in the same manner as in Example 1, and the characteristics of the capacitor according to Example 7 were evaluated.

(Example 8)
A capacitor according to Example 8 was obtained in the same manner as in Example 1, except that the ALD film formation conditions were adjusted so that the composition of the dielectric layer _{was Hf0.97Al0.03O2 .} P-E curve measurement and J-E curve measurement of the capacitor according to Example 8 were performed in the same manner as in Example 1, and the characteristics of the capacitor according to Example 8 were evaluated.

Example 9
A capacitor according to Example 9 was obtained in _the same manner as in Example _{1, except that the ALD film formation conditions were adjusted so that the composition of the dielectric layer was Hf0.4665Zr0.4665Al0.067O2. P -} E curve and J-E curve measurements of the capacitor according to Example 9 were performed in the same manner as in Example 1, and the characteristics of the capacitor according to Example 9 were evaluated.

Example 10
A capacitor according to Example 10 was obtained in the same manner as in Example 1, except that the ALD film formation conditions were adjusted so that the composition of the dielectric layer _{was Zr0.97Al0.03O2 .} P-E curve measurement and J-E curve measurement of the capacitor according to Example 10 were performed in the same manner as in Example 1, and the characteristics of the capacitor according to Example 10 were evaluated.

Example 11
A capacitor according to Example 11 was obtained in _the same _manner as in Example 1, except that the ALD film formation conditions were adjusted so that the composition of the dielectric layer was _{Hf0.479Zr0.479Ga0.042O2 .} The composition of the dielectric layer was determined based on the ALD film formation conditions for forming the dielectric layer, with reference to the Growth Per Cycle (GPC ₎ when _HfO2 , _ZrO2 , and _Ga2O3 were formed by ALD. P-E curve and J-E curve measurements of the capacitor according to Example 11 were performed in the same manner as in Example 1, and the characteristics of the capacitor according to Example 11 were evaluated.

Example 12
A capacitor according to Example 12 was obtained in the same manner as in Example 5, except that the thickness of the oxide layer was adjusted to 10 nm. The P-E curve and J-E curve of the capacitor according to Example 12 were measured in the same manner as in Example 1, and the characteristics of the capacitor according to Example 12 were evaluated.

Example 13
A capacitor according to Example 13 was obtained in the same manner as in Example 5, except that the thickness of the oxide layer was adjusted to 20 nm. The P-E curve and J-E curve of the capacitor according to Example 13 were measured in the same manner as in Example 1, and the characteristics of the capacitor according to Example 13 were evaluated.

(Comparative Example 1)
A capacitor according to Comparative Example 1 was obtained in the same manner as in Example 1, except that a second electrode was formed on the dielectric layer without forming an oxide layer. P-E curve and J-E curve measurements of the capacitor according to Comparative Example 1 were performed in the same manner as in Example 1, and the characteristics of the capacitor according to Comparative Example 1 were evaluated. FIG. 7 is a graph showing the relationship between polarization and electric field strength in the capacitor according to Comparative Example 1, and shows the results of the P-E curve measurement. In FIG. 7, the vertical axis represents polarization, and the horizontal axis represents electric field strength.

(Comparative Example 2)
Except for forming a second electrode on the dielectric layer without forming an oxide layer, a capacitor according to Comparative Example 2 was obtained in the same manner as in Example 2. P-E curve and J-E curve measurements of the capacitor according to Comparative Example 2 were performed in the same manner as in Example 1, and the characteristics of the capacitor according to Comparative Example 2 were evaluated.

(Comparative Example 3)
A capacitor according to Comparative Example 3 was obtained in the same manner as in Example 3, except that a second electrode was formed on the dielectric layer without forming an oxide layer. P-E curve and J-E curve measurements of the capacitor according to Comparative Example 3 were performed in the same manner as in Example 1, and the characteristics of the capacitor according to Comparative Example 3 were evaluated.

(Comparative Example 4)
A capacitor according to Comparative Example 4 was obtained in the same manner as in Example 4, except that a second electrode was formed on the dielectric layer without forming an oxide layer. P-E curve and J-E curve measurements of the capacitor according to Comparative Example 4 were performed in the same manner as in Example 1, and the characteristics of the capacitor according to Comparative Example 4 were evaluated.

(Comparative Example 5)
A capacitor according to Comparative Example 5 was obtained in the same manner as in Example 5, except that a second electrode was formed on the dielectric layer without forming an oxide layer. P-E curve and J-E curve measurements of the capacitor according to Comparative Example 5 were performed in the same manner as in Example 1, and the characteristics of the capacitor according to Comparative Example 5 were evaluated.

(Comparative Example 6)
A capacitor according to Comparative Example 6 was obtained in the same manner as in Example 6, except that a second electrode was formed on the dielectric layer without forming an oxide layer. P-E curve and J-E curve measurements of the capacitor according to Comparative Example 6 were performed in the same manner as in Example 1, and the characteristics of the capacitor according to Comparative Example 6 were evaluated.

(Comparative Example 7)
A capacitor according to Comparative Example 7 was obtained in the same manner as in Example 7, except that a second electrode was formed on the dielectric layer without forming an oxide layer. P-E curve and J-E curve measurements of the capacitor according to Comparative Example 7 were performed in the same manner as in Example 1, and the characteristics of the capacitor according to Comparative Example 7 were evaluated.

(Comparative Example 8)
A capacitor according to Comparative Example 8 was obtained in the same manner as in Example 8, except that a second electrode was formed on the dielectric layer without forming an oxide layer. P-E curve and J-E curve measurements of the capacitor according to Comparative Example 8 were performed in the same manner as in Example 1, and the characteristics of the capacitor according to Comparative Example 8 were evaluated.

(Comparative Example 9)
A capacitor according to Comparative Example 9 was obtained in the same manner as in Example 9, except that a second electrode was formed on the dielectric layer without forming an oxide layer. P-E curve and J-E curve measurements of the capacitor according to Comparative Example 9 were performed in the same manner as in Example 1, and the characteristics of the capacitor according to Comparative Example 9 were evaluated.

(Comparative Example 10)
A capacitor according to Comparative Example 10 was obtained in the same manner as in Example 10, except that a second electrode was formed on the dielectric layer without forming an oxide layer. P-E curve and J-E curve measurements of the capacitor according to Comparative Example 10 were performed in the same manner as in Example 1, and the characteristics of the capacitor according to Comparative Example 10 were evaluated.

(Comparative Example 11)
A capacitor according to Comparative Example 11 was obtained in the same manner as in Example 1, except that the ALD film formation conditions were adjusted so that the composition of the dielectric layer was _HfO2 , and a second electrode was formed on the dielectric layer without forming an oxide layer. P-E curve and J-E curve measurements of the capacitor according to Comparative Example 11 were performed in the same manner as in Example 1, and the characteristics of the capacitor according to Comparative Example 11 were evaluated.

(Comparative Example 12)
_A capacitor according to Comparative Example 12 was obtained in the same manner as in Example ₁ , except that the ALD film formation conditions were adjusted so that the composition of the dielectric layer was _Hf0.5Zr0.5O2 , and a second electrode was formed on the dielectric layer without forming an oxide layer. P-E curve and J-E curve measurements of the capacitor according to Comparative Example 12 were performed in the same manner as in Example 1, and the characteristics of the capacitor according to Comparative Example 12 were evaluated. FIG. 8 is a graph showing the relationship between polarization and electric field strength in the capacitor according to Comparative Example 12, and shows the results of the P-E curve measurement. In FIG. 8, the vertical axis represents polarization, and the horizontal axis represents electric field strength.

(Comparative Example 13)
A capacitor according to Comparative Example 13 was obtained in the same manner as in Example 1, except that the ALD film formation conditions were adjusted so that the composition of the dielectric layer was _ZrO2 , and a second electrode was formed on the dielectric layer without forming an oxide layer. P-E curve and J-E curve measurements of the capacitor according to Comparative Example 13 were performed in the same manner as in Example 1, and the characteristics of the capacitor according to Comparative Example 13 were evaluated.

(Comparative Example 14)
A capacitor according to _Comparative Example 14 was obtained in _the same manner as in Example ₁₁ , except that the ALD film formation conditions were adjusted so that the composition of the dielectric layer was _{Hf0.475Zr0.475Ga0.05O2} , and a second electrode was formed on the dielectric layer without forming an oxide layer. P-E curve and J-E curve measurements of the capacitor according to Comparative Example 14 were performed in the same manner as in Example 1, and the characteristics of the capacitor according to Comparative Example 14 were evaluated.

(Comparative Example 15)
A 50 nm thick Mo thin film was formed on a single crystal substrate having a Si (100) surface by RF magnetron sputtering to obtain a first electrode. Next, a 10 nm thick dielectric layer a having a composition of Hf _0.485 Zr _0.485 Al _0.03 O ₂ was formed on the first electrode by ALD. Next, a 1 nm thick oxide layer having a composition of TiO ₂ was formed on the dielectric layer a by ALD. Next, a 10 nm thick dielectric layer b having a composition of Hf _0.485 Zr _0.485 Al _0.03 O ₂ was formed on the oxide layer by ALD. Next, a stack including the single crystal substrate having a Si (100) surface, the first electrode, the dielectric layer a, the oxide layer, and the dielectric layer b was heated in a nitrogen atmosphere at 500°C for 600 seconds and subjected to RTA. Thereafter, a thin Au film was formed on the dielectric layer b by vacuum deposition to a thickness of 150 nm to obtain a second electrode. In this manner, the capacitor according to Comparative Example 15 was fabricated. The P-E curve and J-E curve measurements of the capacitor according to Comparative Example 15 were performed in the same manner as in Example 1, and the characteristics of the capacitor according to Comparative Example 15 were evaluated.

(Comparative Example 16)
A 50 nm thick Mo thin film was formed on a single crystal substrate having a Si (100) surface by RF magnetron sputtering to obtain a first electrode. Next, a 1 nm thick oxide layer having a TiO ₂ composition was formed on the first electrode by ALD. Next, a 20 nm thick dielectric layer having a Hf _0.485 Zr _0.485 Al _0.03 O ₂ composition was formed on the oxide layer by ALD. Next, the stack including the single crystal substrate having a Si (100) surface, the first electrode, the oxide layer, and the dielectric layer was heated in a nitrogen atmosphere at 500°C for 600 seconds and subjected to RTA. A 150 nm thick Au thin film was then formed on the dielectric layer by vacuum deposition to obtain a second electrode. In this manner, a capacitor according to Comparative Example 16 was fabricated. P-E curve and J-E curve measurements of the capacitor according to Comparative Example 16 were performed in the same manner as in Example 1, and the characteristics of the capacitor according to Comparative Example 16 were evaluated.

(Comparative Example 17)
A capacitor according to Comparative Example 17 was obtained in the same manner as in Example ₁ , except that the composition of the oxide layer was changed to _Al2O3 . The P-E curve and J-E curve measurements of the capacitor according to Comparative Example 17 were performed in the same manner as in Example 1, and the characteristics of the capacitor according to Comparative Example 17 were evaluated.

Tables 1 to 4 show the composition of the dielectric layer, the thickness of the oxide layer, and the evaluation results of the characteristics of the capacitors in each example and comparative example.

As shown in Table 1, the capacitors according to Examples 1 to 10 had larger differences (P _max - P _r ) and ratios P _max /P _r than the capacitors according to Comparative Examples 1 to 10, respectively. It is believed that the dielectric layers of the capacitors according to Examples 1 to 10 contain a larger amount of antiferroelectric phase than the capacitors according to Comparative Examples 1 to 10, respectively. For this reason, the capacitors according to Examples 1 to 10 are advantageous from the viewpoint of increasing the capacitance and charge/discharge efficiency. The capacitors according to Examples 1 to 7 had smaller electric field strengths E _T than the capacitors according to Comparative Examples 1 to 7, respectively. This is also believed to be advantageous from the viewpoint of increasing the capacitance and charge/discharge efficiency of the capacitor.

9 is a graph showing the relationship between the molar ratio Al/(Hf + Zr + Al) and the molar ratio Zr/(Hf + Zr) in the dielectric layers of the examples and comparative examples. In FIG. 9, the vertical axis represents the molar ratio Al/(Hf + Zr + Al), and the horizontal axis represents the molar ratio Zr/(Hf + Zr). In FIG. 9, plots marked with "◯" represent examples, and plots marked with "X" represent comparative examples. Table 1 lists the numbers assigned to each plot in FIG. 9 corresponding to the examples or comparative examples. In the dielectric layers of the capacitors of Examples 1 to 10, the molar ratio Al/(Hf + Zr + Al) was greater than 0 and less than 0.08, and the molar ratio Zr/(Hf + Zr) was between 0 and 1. This suggests that capacitors with a molar ratio in the dielectric layer within this range and an oxide layer tend to have a dielectric layer that contains a large amount of antiferroelectric phase, which is more advantageous in terms of increasing the capacitance and charge/discharge efficiency of the capacitor. In the dielectric layers of the capacitors according to Examples 1 to 7, the molar ratio Al/(Hf + Zr + Al) was greater than 0 and less than 0.067, and the molar ratio Zr/(Hf + Zr) was greater than 0 and less than 1. This suggests that capacitors with dielectric layers having molar ratios in these ranges and oxide layers tend to have a dielectric layer that contains more antiferroelectric phase, and are therefore more advantageous in terms of increasing the capacitance and charge/discharge efficiency of the capacitor.

As shown in Table 2, the capacitor according to Example 1 had a larger difference (P _max - P _r ) and ratio P _max /P _r and a smaller electric field strength E _T than the capacitors according to Comparative Example 1 and Comparative Example 12. The capacitor according to Comparative Example 12 did not contain Al in its dielectric layer and did not have an oxide layer. The capacitor according to Example 11 had a larger difference (P _max - P _r ) and ratio P _max /P _r and a smaller electric field strength E _T than the capacitors according to Comparative Examples 12 and 14. It was suggested that capacitors in which the dielectric layer contains Al or Ga and is provided with an oxide layer are more likely to have a dielectric layer containing a large amount of antiferroelectric phase, which is advantageous from the viewpoint of increasing the capacitance and charge/discharge efficiency of the capacitor.

As shown in Table 3, the capacitor according to Example 1 had a larger difference (P _max - P _r ) and ratio P _max /P _r and a smaller _ET than the capacitors according to Comparative Examples 1, 15, 16, and 17. The capacitor according to Comparative Example 1 did not have an oxide layer. In the capacitor according to Comparative Example 15, an oxide layer was disposed between dielectric layer a and dielectric layer b. In the capacitor according to Comparative Example 16, an oxide layer was disposed between the first electrode and the dielectric layer. In the capacitor according to Comparative Example 17, the composition of the oxide layer was Al ₂ O _3. By disposing an oxide layer having a composition of TiO ₂ between the dielectric layer and the second electrode, the dielectric layer is likely to contain a large amount of antiferroelectric phase, which is suggested to be advantageous from the viewpoint of increasing the capacitance and charge/discharge efficiency of the capacitor.

As shown in Table 4, the capacitors according to Examples 5, 12, and 13 had larger differences (P _max - P _r ) and ratios P _max /P _r and smaller electric field strengths E _T than the capacitor according to Comparative Example 5. Comparing Examples 5 and 12 with Example 13 suggests that an oxide layer thickness of more than 0 nm and less than 20 nm is more advantageous from the standpoint of increasing the capacitance and charge/discharge efficiency of the capacitor.

The capacitor of the present disclosure is advantageous in terms of capacity and charge/discharge efficiency.

Claims (18)

A substrate;
a first electrode disposed on or integral with the substrate;
a dielectric layer disposed on the first electrode and including an antiferroelectric;
an oxide layer in contact with the dielectric layer;
a second electrode in contact with the oxide layer;
the dielectric layer includes a first oxide containing at least one selected from the group consisting of hafnium and zirconium, and at least one selected from the group consisting of aluminum, gallium, and silicon;
the oxide layer comprises a second oxide containing titanium;
Capacitor. The first oxide contains at least one selected from the group consisting of aluminum and gallium.
The capacitor of claim 1 . a molar ratio of the zirconium content to the sum of the hafnium content and the zirconium content in the dielectric layer is equal to or greater than 0 and equal to or less than 1,
a molar ratio of the sum of the aluminum content, the gallium content, and the silicon content to the sum of the hafnium content, the zirconium content, the aluminum content, the gallium content, and the silicon content in the dielectric layer is greater than 0 and less than 0.08;
The capacitor of claim 1 . a molar ratio of the zirconium content to the sum of the hafnium content and the zirconium content in the dielectric layer is greater than 0 and less than 1;
a molar ratio of the sum of the aluminum content, the gallium content, and the silicon content to the sum of the hafnium content, the zirconium content, the aluminum content, the gallium content, and the silicon content in the dielectric layer is greater than 0 and less than 0.067;
The capacitor according to claim 3 . the first oxide has a composition represented by Hf _1-xy Zr _x A _y O _2±δ ,
In the above composition, A is at least one selected from the group consisting of aluminum, gallium, and silicon;
The composition satisfies the conditions 0≦x/(1−y)≦1 and 0<y<0.08.
The capacitor of claim 1 . the composition further satisfies the conditions 0<x/(1-y)<1 and 0<y<0.067;
The capacitor according to claim 5 . The dielectric layer includes a fluorite structure.
The capacitor of claim 1 . The dielectric layer includes a tetragonal phase.
The capacitor of claim 1 . The oxide layer has a thickness greater than 0 nm and less than 20 nm.
The capacitor of claim 1 . The second oxide has a composition represented by TiO2 _{± η} ,
The capacitor of claim 1 . the substrate contains at least one selected from the group consisting of aluminum, aluminum oxide, tantalum, tantalum oxide, niobium, niobium oxide, titanium, titanium oxide, hafnium, hafnium oxide, zirconium, zirconium oxide, zinc, zinc oxide, and silicon;
The capacitor of claim 1 . the first electrode contains at least one selected from the group consisting of aluminum, titanium nitride, titanium oxide, tantalum nitride, molybdenum, tungsten, tantalum, zirconium, hafnium, niobium, titanium, silicon, zinc oxide, indium oxide, tin oxide, silicon single crystal, and polysilicon;
The capacitor of claim 1 . The substrate is electrically conductive and is integrated with the first electrode.
The capacitor of claim 1 . the second electrode includes at least one selected from the group consisting of a conductive polymer, manganese oxide, zinc oxide, indium oxide, tin oxide, titanium nitride, titanium oxide, tantalum nitride, an electrolyte, and polysilicon;
The capacitor of claim 1 . An electric circuit comprising the capacitor according to any one of claims 1 to 14. A circuit board comprising the capacitor according to any one of claims 1 to 14. A device comprising the capacitor described in any one of claims 1 to 14. An electricity storage device comprising the capacitor according to any one of claims 1 to 14.