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WO2025231947A1 - Laser à semi-conducteur réglable à cavité externe - Google Patents

Laser à semi-conducteur réglable à cavité externe

Info

Publication number
WO2025231947A1
WO2025231947A1 PCT/CN2024/096371 CN2024096371W WO2025231947A1 WO 2025231947 A1 WO2025231947 A1 WO 2025231947A1 CN 2024096371 W CN2024096371 W CN 2024096371W WO 2025231947 A1 WO2025231947 A1 WO 2025231947A1
Authority
WO
WIPO (PCT)
Prior art keywords
cylindrical lens
semiconductor laser
diffraction grating
external cavity
light beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/CN2024/096371
Other languages
English (en)
Chinese (zh)
Inventor
宋宇燕
闫大鹏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan Raycus Fiber Laser Technologies Co Ltd
Original Assignee
Wuhan Raycus Fiber Laser Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan Raycus Fiber Laser Technologies Co Ltd filed Critical Wuhan Raycus Fiber Laser Technologies Co Ltd
Publication of WO2025231947A1 publication Critical patent/WO2025231947A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon

Definitions

  • This application relates to the field of fiber laser technology, and specifically to a method for an external cavity tunable semiconductor laser.
  • An external cavity tunable semiconductor laser is an effective structure for achieving tunable output of a semiconductor laser. It mainly consists of three parts: a semiconductor laser chip, a collimating lens, and an optical feedback element.
  • the optical feedback element acts as a frequency selection element, selecting and feeding back the laser output from the semiconductor laser chip. Adjusting the optical feedback element achieves wavelength tuning of the output laser.
  • the external cavity tunable structure provided in related technologies mainly adjusts the lasing wavelength of the resonant cavity by changing the grating angle, thereby realizing the wavelength tuning function.
  • the beam output direction also changes with the rotation of the grating.
  • This application provides an external cavity tunable semiconductor laser to solve the technical problem in related technologies that external cavity tunable semiconductor lasers cannot simultaneously guarantee wavelength tuning function and beam output direction.
  • this application provides an external cavity tunable semiconductor laser, comprising a semiconductor laser, a collimating lens, a cylindrical lens, a diffraction grating, and a partial reflector connected in sequence.
  • the collimating lens is located at one focal length from the cylindrical lens, and the center of the diffraction grating coincides with the positions at one focal length on both sides of the cylindrical lens, respectively. Furthermore, the grating direction of the diffraction grating is the same as the polarization direction of the light beam transmitted to the partial mirror via the diffraction grating.
  • the normal of the diffraction grating forms a littrow angle with the transmission direction of the light beam transmitted to the partial mirror, and the transmission direction of the light beam through the partial mirror is perpendicular to the partial mirror.
  • the cylindrical lens is used to move in a direction perpendicular to the transmission direction of the light beam transmitted to the cylindrical lens in order to tune the wavelength of the output light beam.
  • the moving distance of the cylindrical lens in the direction perpendicular to the transmission direction of the light beam transmitted to the cylindrical lens satisfies a first preset relationship with the first incident angle and the second incident angle.
  • the first incident angle is the incident angle of the light beam transmitted to the diffraction grating before the cylindrical lens moves
  • the second incident angle is the incident angle of the light beam transmitted to the diffraction grating after the cylindrical lens moves.
  • the first preset relationship is:
  • ⁇ ’ is the second incident angle
  • ⁇ is the first incident angle
  • ⁇ x is the moving distance
  • f is the focal length of the cylindrical lens.
  • the wavelength of the tuned beam satisfies a second preset relationship with the first incident angle and the second incident angle
  • the second preset relationship is:
  • the semiconductor laser is a blue semiconductor laser.
  • the collimating lens includes a fast-axis collimating lens and a slow-axis collimating lens, with the fast-axis collimating lens disposed between the semiconductor laser and the slow-axis collimating lens.
  • the fast-axis collimating lens is an aspherical cylindrical lens
  • the slow-axis collimating lens is a spherical cylindrical lens
  • the focal length of the aspherical cylindrical lens is 300 micrometers, and the focal length of the spherical cylindrical lens is 12 millimeters.
  • the cylindrical lens is a plano-convex cylindrical lens, and the convex direction of the plano-convex cylindrical lens is close to the diffraction grating.
  • the diffraction grating is a planar grating.
  • the planar grating is a transmissive grating.
  • This application provides an external cavity tunable semiconductor laser.
  • a collimating lens at one focal length from the cylindrical lens side and the center of a diffraction grating at one focal length from both sides of the cylindrical lens, and keeping the grating's scribe line direction the same as the beam polarization direction, and the normal of the diffraction grating forming a littrow angle with the beam propagation direction transmitted to the partial mirror, and the beam propagation direction via the partial mirror being perpendicular to the partial mirror, the wavelength of the output beam can be tuned by moving the cylindrical lens perpendicular to the beam propagation direction transmitted to the cylindrical lens, while ensuring that the beam output direction remains unchanged.
  • Figure 1 is a schematic diagram of a structure of an external cavity tunable semiconductor laser provided in an embodiment of this application;
  • Figure 2 is a schematic diagram of another structure of the external cavity tunable semiconductor laser provided in the embodiments of this application.
  • first and second are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features.
  • features defined with “first” and “second” may explicitly or implicitly include one or more of the stated features.
  • “multiple” means two or more, unless otherwise explicitly specified.
  • “/” means “or.”
  • the external cavity tunable semiconductor laser is an effective structure for achieving tunable output of a semiconductor laser, mainly composed of three parts: a semiconductor laser chip, a collimating lens, and an optical feedback element.
  • the optical feedback element acting as a frequency selection element, selects and feeds back the laser output from the semiconductor laser chip. Adjustment of the optical feedback element achieves wavelength tuning of the output laser.
  • the external cavity tunable structures provided in related technologies mainly adjust the lasing wavelength of the resonant cavity by changing the grating angle, thereby achieving wavelength tuning. Yes, but the beam output direction will change as the grating rotates.
  • this application provides an external cavity tunable semiconductor laser.
  • Figure 1 is a structural schematic diagram of an external cavity tunable semiconductor laser provided in this application.
  • the external cavity tunable semiconductor laser provided in this application includes a semiconductor laser 10, a collimating lens 20, a cylindrical lens 30, a diffraction grating 40, and a partial reflector 50, which are sequentially connected optically.
  • the collimating lens 20 is located at one focal length from the cylindrical lens 30, and the center of the diffraction grating 40 is located at one focal length from both sides of the cylindrical lens 30, respectively.
  • the grating direction of the diffraction grating 40 is the same as the polarization direction of the light beam transmitted to the partial mirror via the diffraction grating 40.
  • the normal of the diffraction grating 40 forms a littrow angle with the transmission direction of the light beam transmitted to the partial reflector, and the transmission direction of the light beam via the partial reflector 50 is perpendicular to the partial reflector.
  • the cylindrical lens 30 is used to move in a direction perpendicular to the transmission direction of the light beam transmitted to the cylindrical lens 30 in order to tune the wavelength of the output light beam.
  • the littrow angle is an important concept in optics, particularly in grating diffraction and spectroscopy. It refers to the diffraction angle when the diffracted light from the grating coincides with the incident light in a littrow configuration.
  • the littrow angle is the angle formed by the diffracted light and the grating normal in this configuration.
  • the collimating lens 20 is positioned at one focal length from the cylindrical lens 30, and the center of the diffraction grating 40 is positioned at one focal length from both sides of the cylindrical lens 30, while maintaining the grating direction of the diffraction grating 40 in the same direction as the polarization direction of the beam.
  • the normal of the diffraction grating 40 forms a littrow angle with the transmission direction of the light beam transmitted to the partial mirror.
  • the transmission direction of the light beam via the partial mirror 50 is perpendicular to the partial mirror. This allows the wavelength of the output light beam to be tuned by moving the cylindrical lens 30 in a direction perpendicular to the transmission direction of the light beam transmitted to the cylindrical lens 30, while ensuring that the direction of the output light beam remains unchanged.
  • Figure 2 is a schematic diagram of another structure of the external cavity tunable semiconductor laser provided in this application embodiment
  • Figure 2 is a schematic diagram of the cylindrical lens 30 in Figure 1 after it has been moved.
  • the wavelength of the output beam can be tuned by moving the cylindrical lens 30 in a direction perpendicular to the beam transmission direction to the cylindrical lens 30, while ensuring that the direction of the beam output remains unchanged.
  • the moving distance of the cylindrical lens 30 in the transmission direction perpendicular to the beam transmitted to the cylindrical lens 30 provided in this application embodiment satisfies a first preset relationship with the first incident angle and the second incident angle.
  • the first incident angle is the incident angle of the beam transmitted to the diffraction grating 40 before the cylindrical lens 30 moves
  • the second incident angle is the incident angle of the beam transmitted to the diffraction grating 40 after the cylindrical lens 30 moves.
  • ⁇ ’ is the second incident angle
  • ⁇ is the first incident angle
  • ⁇ x is the moving distance
  • f is the focal length of the cylindrical lens 30.
  • the wavelength of the tuned beam provided in this application embodiment satisfies a second preset relationship with the first incident angle and the second incident angle;
  • ⁇ is the wavelength
  • d is the spacing between adjacent grooves on the surface of the diffraction grating 40.
  • the semiconductor laser 10 provided in this application is a blue semiconductor.
  • the bulk laser, specifically the blue semiconductor laser can directly emit blue light and has advantages such as simple structure, ease of use, and high electro-optical conversion efficiency.
  • the semiconductor laser 10 provided in this embodiment can also be other types of semiconductor lasers, and no specific limitations are made here.
  • the collimating lens 20 provided in this application may include a fast-axis collimating lens 21 and a slow-axis collimating lens 22.
  • the fast-axis collimating lens 21 is disposed between the semiconductor laser 10 and the slow-axis collimating lens 22.
  • the fast-axis collimating lens 21 performs fast-axis collimation on the beam emitted by the semiconductor laser 10
  • the slow-axis collimating lens 22 performs slow-axis collimation on the beam transmitted from the fast-axis collimating lens 21 to the slow-axis collimating lens 22.
  • the position of the slow-axis collimating lens 22 near the cylindrical lens 30 at one focal length coincides with the position of the cylindrical lens 30 near the slow-axis collimating lens 22 at one focal length.
  • the fast-axis collimating lens 21 provided in this application can be an aspherical cylindrical lens
  • the slow-axis collimating lens 22 can be a spherical cylindrical lens.
  • the focal length of the aspherical cylindrical lens provided in this application can be 300 micrometers
  • the focal length of the spherical cylindrical lens can be 12 millimeters.
  • focal lengths of the aspherical cylindrical lens and the spherical cylindrical lens provided in this embodiment are not limited to the values provided in the above embodiment, and can be customized and adjusted according to specific application scenarios, without specific limitations here.
  • the cylindrical lens 30 provided in this application can be a plano-convex cylindrical lens 30, wherein the convex direction of the plano-convex cylindrical lens 30 is close to the diffraction grating 40.
  • the diffraction grating 40 provided in this application can be a planar grating.
  • the planar grating can be a transmissive grating.
  • the main characteristics of a transmissive grating are high transmittance, high resolution, and high stability. Because the grating's scribe line spacing is extremely small, typically only a few hundred nanometers to a few micrometers, a transmissive grating can achieve high-precision modulation of light waves. Furthermore, the transmissive grating also has very high transmittance, effectively reducing light energy loss.
  • this application provides an external cavity tunable semiconductor laser, comprising a semiconductor laser, a collimating lens, a cylindrical lens, a diffraction grating, and a partial reflector connected in sequence.
  • the collimating lens located at one focal length near the cylindrical lens, and the center of the diffraction grating, respectively, coincide with the positions at one focal length on both sides of the cylindrical lens.
  • the grating's scribe line direction is the same as the polarization direction of the beam transmitted to the partial mirror via the diffraction grating.
  • the normal to the diffraction grating forms a littrow angle with the transmission direction of the beam transmitted to the partial mirror.
  • the transmission direction of the beam transmitted through the partial mirror is perpendicular to the partial mirror.
  • the cylindrical lens is used to move in a direction perpendicular to the transmission direction of the beam transmitted to the cylindrical lens to tune the output beam's wavelength.
  • the collimating lens By placing the collimating lens at one focal length from the cylindrical lens side and the center of the diffraction grating at one focal length from both sides of the cylindrical lens, while keeping the grating's scribe line direction the same as the beam polarization direction, and the normal of the diffraction grating forming a littrow angle with the beam propagation direction to the partial mirror, and the beam propagation direction via the partial mirror perpendicular to the partial mirror, it is possible to tune the output beam wavelength by moving the cylindrical lens perpendicular to the beam propagation direction to the cylindrical lens, while ensuring the beam output direction remains unchanged.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

La présente invention concerne un laser à semi-conducteur réglable à cavité externe, comprenant, successivement et reliés optiquement les uns aux autres, un laser à semi-conducteur (10), une lentille de collimation (20), une lentille cylindrique (30), un réseau de diffraction (40) et un miroir partiellement réfléchissant (50). La lentille de collimation (20) est située à proximité de la position à une distance focale d'un côté de la lentille cylindrique (30). Le centre du réseau de diffraction (40) coïncide avec la position à une distance focale de l'autre côté de la lentille cylindrique (30). La direction dominante du réseau de diffraction (40) est la même que la direction de polarisation d'un faisceau lumineux transmis au miroir partiellement réfléchissant (50) par l'intermédiaire du réseau de diffraction (40). La normale au réseau de diffraction (40) et la direction de transmission du faisceau lumineux transmis au miroir partiellement réfléchissant (50) forment un angle de Littrow. La direction de transmission du faisceau lumineux par l'intermédiaire du miroir partiellement réfléchissant (50) est perpendiculaire au miroir partiellement réfléchissant (50). La lentille cylindrique (30) est utilisée pour se déplacer dans une direction perpendiculaire à la direction de transmission du faisceau lumineux transmis à la lentille cylindrique (30) afin de régler la longueur d'onde d'un faisceau lumineux de sortie.
PCT/CN2024/096371 2024-05-07 2024-05-30 Laser à semi-conducteur réglable à cavité externe Pending WO2025231947A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202410553266.2A CN118249199A (zh) 2024-05-07 2024-05-07 一种外腔可调谐半导体激光器
CN202410553266.2 2024-05-07

Publications (1)

Publication Number Publication Date
WO2025231947A1 true WO2025231947A1 (fr) 2025-11-13

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ID=91557273

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2024/096371 Pending WO2025231947A1 (fr) 2024-05-07 2024-05-30 Laser à semi-conducteur réglable à cavité externe

Country Status (2)

Country Link
CN (1) CN118249199A (fr)
WO (1) WO2025231947A1 (fr)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6252897B1 (en) * 1997-12-18 2001-06-26 Nec Corporation External mirror type wavelength tunable laser
US20060132766A1 (en) * 2004-12-21 2006-06-22 Bruce Richman Continuously tunable external cavity diode laser
CN101826701A (zh) * 2010-05-06 2010-09-08 山东远普光学股份有限公司 一种无跳模连续调谐半导体激光器
CN102931582A (zh) * 2012-07-25 2013-02-13 华中科技大学 可调谐光栅外腔半导体激光器
CN105591283A (zh) * 2016-03-18 2016-05-18 厦门大学 一种光栅外腔半导体激光器波长的调谐方法
CN115117732A (zh) * 2022-05-24 2022-09-27 北京工业大学 一种外腔可调谐半导体激光器

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0007160D0 (en) * 2000-03-25 2000-05-17 Renishaw Plc Wavelength tuning in external cavity lasers
CN206379619U (zh) * 2016-12-20 2017-08-04 福州高意通讯有限公司 一种可调谐的半导体激光器
JP6696629B1 (ja) * 2018-10-22 2020-05-20 三菱電機株式会社 レーザ装置
CN116435872B (zh) * 2023-03-08 2025-09-09 北京工业大学 一种阵列半导体激光器的窄线宽光谱合束装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6252897B1 (en) * 1997-12-18 2001-06-26 Nec Corporation External mirror type wavelength tunable laser
US20060132766A1 (en) * 2004-12-21 2006-06-22 Bruce Richman Continuously tunable external cavity diode laser
CN101826701A (zh) * 2010-05-06 2010-09-08 山东远普光学股份有限公司 一种无跳模连续调谐半导体激光器
CN102931582A (zh) * 2012-07-25 2013-02-13 华中科技大学 可调谐光栅外腔半导体激光器
CN105591283A (zh) * 2016-03-18 2016-05-18 厦门大学 一种光栅外腔半导体激光器波长的调谐方法
CN115117732A (zh) * 2022-05-24 2022-09-27 北京工业大学 一种外腔可调谐半导体激光器

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