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WO2025220085A1 - Élément photosensible, procédé de formation de motif de réserve et procédé de production de carte de câblage - Google Patents

Élément photosensible, procédé de formation de motif de réserve et procédé de production de carte de câblage

Info

Publication number
WO2025220085A1
WO2025220085A1 PCT/JP2024/015031 JP2024015031W WO2025220085A1 WO 2025220085 A1 WO2025220085 A1 WO 2025220085A1 JP 2024015031 W JP2024015031 W JP 2024015031W WO 2025220085 A1 WO2025220085 A1 WO 2025220085A1
Authority
WO
WIPO (PCT)
Prior art keywords
mass
photosensitive layer
less
photosensitive
meth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/JP2024/015031
Other languages
English (en)
Japanese (ja)
Inventor
裕亮 坂下
真生 成田
達彦 新井
志歩 田中
明子 武田
茜 大野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Resonac Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Resonac Corp filed Critical Resonac Corp
Priority to PCT/JP2024/015031 priority Critical patent/WO2025220085A1/fr
Publication of WO2025220085A1 publication Critical patent/WO2025220085A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials

Definitions

  • This disclosure relates to a photosensitive element, a method for forming a resist pattern, and a method for manufacturing a wiring board.
  • a resist pattern is formed to obtain the desired wiring.
  • a photosensitive element which includes a support film, a layer formed on the support film using a photosensitive resin composition (hereinafter also referred to as the "photosensitive layer"), and a protective film laminated to the side of the photosensitive layer opposite the support film.
  • the resist pattern can be formed by exposing and developing the photosensitive layer.
  • Photosensitive elements used in bump formation applications to create copper pillars that connect IC chips to wiring boards for semiconductor packages are required to form resist patterns such as via hole patterns with high resolution.
  • resist patterns such as via hole patterns with high resolution.
  • the thicker the photosensitive layer the more difficult it is to harden uniformly all the way to the bottom, making it difficult to form resist patterns with sufficient resolution and adhesion.
  • the purpose of this disclosure is to provide a photosensitive element capable of forming a resist pattern with excellent resolution and adhesion, a method for forming a resist pattern, and a method for manufacturing a wiring board.
  • a photosensitive element comprising a support film, a photosensitive layer, and a protective film in this order, wherein the photosensitive layer contains a binder polymer, a photopolymerizable compound, a photopolymerization initiator, and an anthracene-based sensitizer, and the anthracene-based sensitizer contains an anthracene compound having alkoxy groups having 3 or less carbon atoms bonded to the 9th and 10th positions of the anthracene ring, the photosensitive layer has a thickness of 30 ⁇ m or more, and the photosensitive layer has a light transmittance of 25.0% or more and 95.0% or less at a wavelength of 405 nm.
  • a method for forming a resist pattern comprising: a step of forming a photosensitive layer on a substrate using the photosensitive element according to any one of the above [1] to [5]; a step of irradiating at least a part of the photosensitive layer with actinic rays to form a photocured portion; and a step of removing the unphotocured portion of the photosensitive layer from the substrate to form a resist pattern.
  • a method for manufacturing a wiring board comprising a step of etching or plating a substrate on which a resist pattern has been formed by the method for forming a resist pattern according to [6] above, to form a conductor pattern.
  • a photosensitive element can be provided that is capable of forming a resist pattern with excellent adhesion and resolution.
  • a method for manufacturing a wiring board using the photosensitive element can be provided.
  • FIG. 1 is a schematic cross-sectional view illustrating a photosensitive element according to one embodiment.
  • process does not only refer to an independent process, but also includes processes that cannot be clearly distinguished from other processes as long as the intended effect of the process is achieved.
  • layer encompasses not only a structure with a shape that is formed over the entire surface when observed in a plan view, but also a structure with a shape that is formed only on a portion of the surface.
  • a numerical range of "A or greater” means a range exceeding A and A.
  • a numerical range of "A or less” means a range exceeding A and A.
  • a numerical range indicated using “to” indicates a range that includes the numerical values before and after "to” as the minimum and maximum values, respectively.
  • the upper or lower limit of a numerical range in a certain stage can be arbitrarily combined with the upper or lower limit of a numerical range in another stage.
  • the upper or lower limit of that numerical range may be replaced with a value shown in the examples.
  • “A or B” may include either A or B, or may include both. Unless otherwise specified, the materials exemplified in this specification can be used alone or in combination of two or more.
  • (meth)acrylic acid means at least one of "acrylic acid” and its corresponding “methacrylic acid.”
  • (meth)acrylate means at least one of "acrylic acid” and its corresponding "methacrylic acid.”
  • (poly)oxyethylene group means an oxyethylene group or a polyoxyethylene group in which two or more ethylene groups are linked by ether bonds.
  • (poly)oxypropylene group means an oxypropylene group or a polyoxypropylene group in which two or more propylene groups are linked by ether bonds.
  • EO-modified means a compound having a (poly)oxyethylene group.
  • PO-modified means a compound having a (poly)oxypropylene group.
  • EO/PO-modified means a compound having a (poly)oxyethylene group and/or a (poly)oxypropylene group.
  • solid content refers to the non-volatile content of the photosensitive resin composition excluding volatile substances (water, solvent, etc.).
  • solid content refers to components other than the solvent that do not volatilize when the photosensitive resin composition is dried, as described below, and includes those that are liquid, syrup-like, or waxy at room temperature (25°C).
  • the photosensitive element includes a support film, a photosensitive layer, and a protective film, in this order.
  • the photosensitive layer contains (A) a binder polymer, (B) a photopolymerizable compound, (C) a photopolymerization initiator, and (D) an anthracene-based sensitizer, and the anthracene-based sensitizer contains an anthracene compound having alkoxy groups having 3 or less carbon atoms bonded to the 9th and 10th positions of the anthracene ring.
  • the photosensitive layer has a thickness of 30 ⁇ m or more, and a light transmittance of 25.0% to 95.0% at a wavelength of 405 nm.
  • the photosensitive layer is a layer formed using a photosensitive resin composition containing a binder polymer, a photopolymerizable compound, a photopolymerization initiator, and an anthracene-based sensitizer.
  • the photosensitive resin composition according to this embodiment may further contain a polymerization inhibitor or other components as needed. Each component will be described below.
  • the photosensitive resin composition contains a binder polymer as component (A).
  • Component (A) can have a polymerizable monomer as a monomer unit (structural unit), and can be obtained, for example, by radical polymerization of the polymerizable monomer.
  • polymerizable monomers examples include (meth)acrylic acid, hydroxyalkyl (meth)acrylate, benzyl (meth)acrylate, styrene compounds (styrene or styrene derivatives), alkyl (meth)acrylate, tetrahydrofurfuryl (meth)acrylate, dimethylaminoethyl (meth)acrylate, diethylaminoethyl (meth)acrylate, glycidyl (meth)acrylate, 2,2,2-trifluoroethyl (meth)acrylate, 2,2,3,3-tetrafluoropropyl (meth)acrylate, and (meth)acrylic acid.
  • acrylic acids examples include acrylates (diacetone (meth)acrylamide, etc.), (meth)acrylonitrile, vinyl alcohol ethers (vinyl n-butyl ether, etc.), ⁇ -bromo(meth)acrylic acid, ⁇ -chloro(meth)acrylic acid, ⁇ -furyl(meth)acrylic acid, ⁇ -styryl(meth)acrylic acid, maleic acid, maleic anhydride, maleic acid monoesters (monomethyl maleate, monoethyl maleate, monoisopropyl maleate, etc.), fumaric acid, cinnamic acid, ⁇ -cyanocinnamic acid, itaconic acid, crotonic acid, and propiolic acid.
  • component (A) may contain (meth)acrylic acid as a monomer unit.
  • the content of (meth)acrylic acid in component (A) may be 1% by mass or more, 10% by mass or more, 15% by mass or more, 20% by mass or more, 23% by mass or more, or 25% by mass or more, based on the total amount of monomer units constituting component (A), and may be 50% by mass or less, 45% by mass or less, 40% by mass or less, 35% by mass or less, or 30% by mass or less.
  • the content of (meth)acrylic acid monomer units may be, for example, 1 to 50% by mass, 10 to 45% by mass, 15 to 45% by mass, 20 to 40% by mass, 23 to 35% by mass, or 25 to 30% by mass.
  • Component (A) may contain a hydroxyalkyl (meth)acrylate as a monomer unit to enhance alkaline developability.
  • hydroxyalkyl (meth)acrylates include hydroxymethyl (meth)acrylate, hydroxyethyl (meth)acrylate, hydroxypropyl (meth)acrylate, hydroxybutyl (meth)acrylate, hydroxypentyl (meth)acrylate, and hydroxyhexyl (meth)acrylate.
  • the content of hydroxyalkyl (meth)acrylate in component (A) may be 0.1% by mass or more, 0.5% by mass or more, 1.0% by mass or more, 1.5% by mass or more, 2.0% by mass or more, 2.5% by mass or more, or 3.0% by mass or more, based on the total amount of monomer units constituting component (A), and may be 20% by mass or less, 15% by mass or less, 10% by mass or less, 5.0% by mass or less, 4.0% by mass or less, or 3.0% by mass or less.
  • the content of hydroxyalkyl (meth)acrylate monomer units may be, for example, 0.1 to 20% by mass, 0.5 to 15% by mass, 1.0 to 10% by mass, 1.5 to 5.0% by mass, 2.0 to 4.0% by mass, or 2.5 to 3.0% by mass.
  • Component (A) may contain styrene or a styrene derivative as a monomer unit in order to form a resist pattern with superior resolution.
  • styrene derivatives include vinyltoluene and ⁇ -methylstyrene.
  • the content of styrene or styrene derivatives in component (A) may be 30% by mass or more, 32% by mass or more, 35% by mass or more, 40% by mass or more, or 42% by mass or more, based on the total amount of monomer units constituting component (A), and may be 70% by mass or less, 65% by mass or less, 60% by mass or less, 55% by mass or less, or 50% by mass or less. From these perspectives, the content of monomer units of styrene compounds may be, for example, 30 to 70% by mass, 32 to 65% by mass, 35 to 60% by mass, 40 to 55% by mass, or 42 to 50% by mass.
  • Component (A) may contain benzyl (meth)acrylate as a monomer unit, from the viewpoint of improving the adhesion and release properties of the resist pattern.
  • the content of benzyl (meth)acrylate in component (A) may be 5% by mass or more, 10% by mass or more, or 15% by mass or more, and may be 40% by mass or less, 35% by mass or less, 30% by mass or less, or 25% by mass or less, based on the total amount of monomer units constituting component (A). From these viewpoints, the content of benzyl (meth)acrylate monomer units may be, for example, 5 to 40% by mass, 5 to 35% by mass, 10 to 30% by mass, 10 to 25% by mass, or 15 to 25% by mass.
  • Component (A) may further contain structural units derived from other monomers in addition to the above-mentioned monomers.
  • the other monomers may be, for example, (meth)acrylic acid esters.
  • (meth)acrylic acid esters include (meth)acrylic acid alkyl esters, (meth)acrylic acid cycloalkyl esters, and (meth)acrylic acid aryl esters.
  • the other monomer may preferably be a (meth)acrylic acid alkyl ester, from the viewpoint of improving alkaline developability and release properties.
  • the alkyl group of the (meth)acrylic acid alkyl ester may be, for example, a methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, heptyl group, octyl group, nonyl group, decyl group, undecyl group, dodecyl group, or a structural isomer thereof, and from the viewpoint of further improving release properties, it may also be an alkyl group having 1 to 4 carbon atoms.
  • the acid value of component (A) may be 100 mgKOH/g or more, 120 mgKOH/g or more, 140 mgKOH/g or more, 150 mgKOH/g or more, 160 mgKOH/g or more, or 170 mgKOH/g or more; from the viewpoint of improving the adhesion (developer resistance) of the cured product of the photosensitive resin composition, the acid value may be 250 mgKOH/g or less, 240 mgKOH/g or less, 230 mgKOH/g or less, 200 mgKOH/g or less, or 190 mgKOH/g or less.
  • the acid value of component (A) can be adjusted by the content of structural units constituting component (A) (for example, structural units derived from (meth)acrylic acid).
  • the acid value can be measured using the following procedure. First, 1 g of the binder polymer to be measured for acid value is precisely weighed, and then 30 g of acetone is added to the binder polymer to dissolve it uniformly and obtain a solution. Next, an appropriate amount of phenolphthalein, which serves as an indicator, is added to the solution, and titration is then performed using a 0.1 N aqueous solution of KOH (potassium hydroxide). The acid value is determined by calculating the mass (unit: mg) of KOH required to neutralize the acetone solution of the binder polymer.
  • the weight average molecular weight (Mw) of component (A) may be 10,000 or more, 20,000 or more, 25,000 or more, or 30,000 or more, from the viewpoint of excellent adhesion (developer resistance) of the cured product of the photosensitive resin composition; and Mw may be 100,000 or less, 80,000 or less, 60,000 or less, 50,000 or less, or 40,000 or less, from the viewpoint of favorable development.
  • the dispersity (Mw/Mn) of component (A) may be, for example, 1.0 or more or 1.5 or more, and from the viewpoint of further improving adhesion and resolution, it may be 3.0 or less or 2.5 or less.
  • the weight average molecular weight and dispersity can be measured, for example, by gel permeation chromatography (GPC) using a calibration curve of standard polystyrene.
  • GPC gel permeation chromatography
  • the GPC conditions are as follows: Pump: Hitachi L-6000 type (manufactured by Hitachi, Ltd., product name) Columns: Gelpack GL-R420, Gelpack GL-R430, Gelpack GL-R440 (all manufactured by Resonac Co., Ltd., product names) Eluent: tetrahydrofuran Measurement temperature: 40°C Flow rate: 2.05 mL/min Detector: Hitachi L-3300 RI (trade name, manufactured by Hitachi, Ltd.)
  • the content of component (A), based on the total solid content of the photosensitive resin composition may be 20% by mass or more, 30% by mass or more, or 40% by mass or more, from the viewpoint of excellent film formability, and may be 90% by mass or less, 80% by mass or less, or 65% by mass or less, from the viewpoint of even better sensitivity and resolution.
  • the content of component (A) may be 30 parts by mass or more, 35 parts by mass or more, or 40 parts by mass or more, relative to 100 parts by mass of the total of components (A) and (B), from the viewpoint of excellent film formability, and may be 70 parts by mass or less, 65 parts by mass or less, or 60 parts by mass or less, from the viewpoint of further improving sensitivity and resolution.
  • the photosensitive resin composition contains a photopolymerizable compound as component (B).
  • Component (B) may be any compound that polymerizes when exposed to light, such as a compound having an ethylenically unsaturated bond.
  • Component (B) may also contain a polyfunctional monomer having two or more reactive groups that react with radicals. From the viewpoint of improving alkaline developability, resolution, and releasability after curing, component (B) may also contain a bisphenol A (meth)acrylate.
  • bisphenol A (meth)acrylates examples include 2,2-bis(4-((meth)acryloxypolyethoxy)phenyl)propane, 2,2-bis(4-((meth)acryloxypolypropoxy)phenyl)propane, 2,2-bis(4-((meth)acryloxypolybutoxy)phenyl)propane, and 2,2-bis(4-((meth)acryloxypolyethoxypolypropoxy)phenyl)propane.
  • component (B) may contain 2,2-bis(4-((meth)acryloxypolyethoxy)phenyl)propane or 2,2-bis(4-((meth)acryloxypentaethoxy)phenyl)propane.
  • the content of bisphenol A type (meth)acrylate may be 20% by mass or more, 30% by mass or more, or 40% by mass or more, and may be 100% by mass or less, 95% by mass or less, or 90% by mass or less, based on the total amount of component (B).
  • component (B) may contain an ⁇ , ⁇ -unsaturated ester compound obtained by reacting a polyhydric alcohol with an ⁇ , ⁇ -unsaturated carboxylic acid.
  • ⁇ , ⁇ -unsaturated ester compounds include polyalkylene glycol di(meth)acrylates such as polyethylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate, and EO-modified polypropylene glycol, trimethylolpropane di(meth)acrylate, trimethylolpropane tri(meth)acrylate, EO-modified trimethylolpropane tri(meth)acrylate, PO-modified trimethylolpropane tri(meth)acrylate, EO-PO-modified trimethylolpropane tri(meth)acrylate, tetramethylolmethane tri(meth)acrylate, and tetramethylolmethane tetra(meth)acrylate.
  • Component (B) may contain a compound having three or more (meth)acryloyl groups to improve sensitivity and adhesion.
  • examples of such compounds include trimethylolpropane tri(meth)acrylate, EO-modified trimethylolpropane tri(meth)acrylate, PO-modified trimethylolpropane tri(meth)acrylate, EO-PO-modified trimethylolpropane tri(meth)acrylate, EO-modified pentaerythritol tetra(meth)acrylate, EO-modified ditrimethylolpropane tetra(meth)acrylate, and EO-modified dipentaerythritol hexa(meth)acrylate.
  • the content of the ⁇ , ⁇ -unsaturated ester compound may be 20% by mass or more or 30% by mass or more, based on the total amount of component (B), from the viewpoint of improving flexibility, and may be 70% by mass or less or 60% by mass or less, from the viewpoint of further improving resolution.
  • the photosensitive resin composition may contain, as component (B), a photopolymerizable compound other than bisphenol A (meth)acrylate and ⁇ , ⁇ -unsaturated ester compound.
  • photopolymerizable compounds include, for example, nonylphenoxy polyethyleneoxyacrylate, phthalic acid compounds, (meth)acrylic acid alkyl esters, and photopolymerizable compounds having at least one cationic polymerizable cyclic ether group in the molecule (such as oxetane compounds).
  • the other photopolymerizable compound may be at least one selected from the group consisting of nonylphenoxy polyethyleneoxyacrylate and phthalic acid compounds.
  • nonylphenoxy polyethyleneoxyacrylates include nonylphenoxytriethyleneoxyacrylate, nonylphenoxytetraethyleneoxyacrylate, nonylphenoxypentaethyleneoxyacrylate, nonylphenoxyhexaethyleneoxyacrylate, nonylphenoxyheptaethyleneoxyacrylate, nonylphenoxyoctaethyleneoxyacrylate, nonylphenoxynonaethyleneoxyacrylate, nonylphenoxydecaethyleneoxyacrylate, and nonylphenoxyundecaethyleneoxyacrylate.
  • phthalic acid compounds include gamma-chloro-beta-hydroxypropyl-beta'-(meth)acryloyloxyethyl-o-phthalate, beta-hydroxyethyl-beta'-(meth)acryloyloxyethyl-o-phthalate, and beta-hydroxypropyl-beta'-(meth)acryloyloxyethyl-o-phthalate.
  • component (B) contains other photopolymerizable compounds
  • the content of the other photopolymerizable compounds may be 1% by mass or more, 3% by mass or more, or 5% by mass or more, and may be 30% by mass or less, 25% by mass or less, or 20% by mass or less, based on the total amount of component (B), from the viewpoint of further suitably improving resolution, adhesion, resist shape, and release properties after curing.
  • the content of component (B) may be 20 to 60 parts by mass, 30 to 55 parts by mass, or 35 to 50 parts by mass, relative to 100 parts by mass of the total amount of components (A) and (B).
  • the photosensitive resin composition contains a photopolymerization initiator as component (C).
  • Component (C) is not particularly limited as long as it can polymerize component (B), and can be appropriately selected from commonly used photopolymerization initiators.
  • Component (C) includes, for example, hexaarylbiimidazole compounds; aromatic ketones such as benzophenone, 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-1-butanone, 2-(dimethylamino)-2-[(4-methylphenyl)methyl]-1-[4-(4-morpholinyl)phenyl]-1-butanone, 4-(2-hydroxyethoxy)phenyl-2-(hydroxy-2-propyl)ketone, and 2-methyl-1-[4-(methylthio)phenyl]-2-morpholino-propanone-1; alkyl ...benzyl-2-dimethylamino-1-(4-morpholinophenyl)-1-butanone, 2-benzyl-2-dimethylamino-1-butanone, 2-benzyl-2-dimethylamino-1-butanone, 2-benzyl-2-dimethylamino-1-butanone, 2-benzyl-2
  • Component (C) may contain a hexaarylbiimidazole compound to inhibit the penetration of component (D) into the polyethylene film.
  • the aryl group in the hexaarylbiimidazole compound may be a phenyl group or the like.
  • the hydrogen atom bonded to the aryl group in the hexaarylbiimidazole compound may be substituted with a halogen atom (such as a chlorine atom).
  • the hexaarylbiimidazole compound may be a 2,4,5-triarylimidazole dimer.
  • 2,4,5-triarylimidazole dimers include 2-(o-chlorophenyl)-4,5-diphenylimidazole dimer, 2-(o-chlorophenyl)-4,5-bis-(m-methoxyphenyl)imidazole dimer, and 2-(p-methoxyphenyl)-4,5-diphenylimidazole dimer.
  • the hexaarylbiimidazole compound is preferably 2-(o-chlorophenyl)-4,5-diphenylimidazole dimer, and more preferably 2,2-bis(o-chlorophenyl)-4,5-4',5'-tetraphenyl-1,2'-biimidazole.
  • the content of the hexaarylbiimidazole compound may be 90% by mass or more, 95% by mass or more, or 99% by mass or more, based on the total amount of component (C).
  • Component (C) may consist solely of the hexaarylbiimidazole compound.
  • the content of component (C) may be 1.0 to 20 parts by mass, 2.0 to 15 parts by mass, 3.0 to 10 parts by mass, or 4.0 to 8.0 parts by mass, relative to 100 parts by mass of the total amount of components (A) and (B). When the content of component (C) is within this range, it becomes easier to achieve a balanced improvement in both sensitivity and resolution.
  • the photosensitive resin composition contains an anthracene-based sensitizer as component (D), which allows effective utilization of the absorption wavelength of actinic rays used for exposure.
  • component (D) contains an anthracene compound having an anthracene ring and alkoxy groups having 3 or less carbon atoms bonded to the 9- and 10-positions of the anthracene ring.
  • an anthracene compound with a specific structure when the protective film is a polyethylene film, it is possible to suppress migration of component (D) from the photosensitive layer to the polyethylene film.
  • an anthracene compound in which alkoxy groups with four or more carbon atoms are bonded to the 9th and 10th positions of the anthracene ring e.g., 9,10-dibutoxyanthracene
  • migration to the polyethylene film is likely to occur.
  • the inventors speculate that this is because alkoxy groups with three or fewer carbon atoms are less hydrophobic than alkoxy groups with four or more carbon atoms, making it difficult for component (D) to penetrate into the hydrophobic polyethylene film.
  • an anthracene compound with excellent migration resistance as component (D)
  • the amount of component (D) substantially contained in the photosensitive layer is less likely to decrease, thereby improving the sensitivity of the photosensitive layer.
  • the alkoxy group having 3 or less carbon atoms may be a methoxy group, an ethoxy group, or a propoxy group.
  • the hydrogen atoms constituting the anthracene ring may be substituted with at least one group selected from the group consisting of an alkyl group (e.g., an alkyl group having 1 to 12 carbon atoms), a halogeno group, a cyano group, a carboxy group, a phenyl group, an alkoxycarbonyl group (e.g., an alkoxycarbonyl group having 2 to 6 carbon atoms), and a benzoyl group.
  • component (D) examples include 9,10-dimethoxyanthracene, 9,10-diethoxyanthracene, and 9,10-dipropoxyanthracene. Because component (D) has superior migration resistance, it may contain at least one selected from the group consisting of 9,10-dimethoxyanthracene, 9,10-diethoxyanthracene, and 9,10-dipropoxyanthracene, and preferably contains 9,10-dimethoxyanthracene or 9,10-diethoxyanthracene.
  • the content of component (D) is preferably 0.1 part by mass or more, more preferably 0.15 part by mass or more, even more preferably 0.2 part by mass or more, and particularly preferably 0.25 part by mass or more, relative to 100 parts by mass of the total of components (A) and (B).
  • the content of component (D) is preferably 1.0 part by mass or less, more preferably 0.8 part by mass or less, even more preferably 0.7 part by mass or less, and particularly preferably 0.6 part by mass or less.
  • the content of component (D) may be 0.1 to 1.0 part by mass, 0.15 to 0.8 parts by mass, 0.2 to 0.7 parts by mass, or 0.25 to 0.6 part by mass.
  • the photosensitive resin composition according to this embodiment contains an anthracene compound having a specific structure as component (D), making it possible to form resist patterns with excellent resolution without the need for the concomitant use of a sensitizing aid such as a naphthalene compound.
  • the photosensitive resin composition may further contain a polymerization inhibitor as component (E) from the viewpoint of suppressing polymerization in unexposed areas during resist pattern formation and further improving resolution.
  • a polymerization inhibitor as component (E) examples include 4-tert-butylcatechol and 4-hydroxy-2,2,6,6-tetramethylpiperidine-N-oxyl.
  • the content of component (E) may be 0.001 parts by mass or more, 0.005 parts by mass or more, or 0.01 parts by mass or more, relative to 100 parts by mass of the total amount of components (A) and (B), from the viewpoints of sensitivity and resolution, and may be 0.10 parts by mass or less, 0.08 parts by mass or less, or 0.05 parts by mass or less, from the viewpoints of sensitivity and adhesion.
  • the photosensitive resin composition may further contain one or more other components in addition to the components described above.
  • other components include hydrogen donors (such as bis[4-(dimethylamino)phenyl]methane, bis[4-(diethylamino)phenyl]methane, and N-phenylglycine), dyes (such as malachite green), tribromophenyl sulfone, photocoloring agents (such as leuco crystal violet), thermal color-developing inhibitors, plasticizers (such as p-toluenesulfonamide), pigments, fillers, antifoaming agents, flame retardants, stabilizers, adhesion promoters, leveling agents, release promoters, antioxidants, fragrances, imaging agents, and thermal crosslinking agents.
  • hydrogen donors such as bis[4-(dimethylamino)phenyl]methane, bis[4-(diethylamino)phenyl]methane, and N-phenylglycine
  • the content of these other components may be 0.005 parts by mass or more, or 0.01 parts by mass or more, and may be 20 parts by mass or less, or 10 parts by mass or less, relative to 100 parts by mass of the total amount of component (A) and component (B).
  • the photosensitive resin composition may further contain one or more organic solvents to adjust the viscosity.
  • organic solvents include methanol, ethanol, acetone, methyl ethyl ketone, methyl cellosolve, ethyl cellosolve, toluene, N,N-dimethylformamide, and propylene glycol monomethyl ether.
  • the photosensitive resin composition can be used, for example, by dissolving the above-mentioned components in an organic solvent to form a solution (hereinafter referred to as the "coating liquid") with a solids content (non-volatile content) of approximately 30 to 60% by mass. Note that the solids content refers to the remaining components after removing volatile components from the photosensitive resin composition solution.
  • the light transmittance of the photosensitive layer at a wavelength of 405 nm is 25.0% or more and 95.0% or less.
  • the light transmittance may be 28.0% or more, 30.0% or more, 32.0% or more, or 33.0% or more.
  • the light transmittance may be 90.0% or less, 80.0% or less, 70.0% or less, or 60.0% or less.
  • the light transmittance of the photosensitive layer at a wavelength of 405 nm was measured using a spectrophotometer U-3310 (Hitachi High-Technologies Corporation) with the support film on which the photosensitive layer was formed. Measurement conditions were a slit of 2 nm, a scan speed of 300 nm/min, and a measurement range of 750 nm to 200 nm.
  • the light transmittance of the photosensitive layer can be calculated by converting the measurement result using only the support film as a reference.
  • the light transmittance measured by the above method is a value calculated including the amount of light scattered by the photosensitive layer and support film; in other words, it can be said to be a value without baseline correction due to scattered light.
  • the light transmittance at a wavelength of 405 nm is derived from the absorbance of component (D), and the light transmittance of the photosensitive layer at a wavelength of 405 nm can be adjusted by adjusting the structure and content of component (D). Light transmittance can also be measured with reference to JIS K 0115 (2004).
  • the thickness of the photosensitive layer after drying may be 30 to 100 ⁇ m. From the viewpoint of forming a resist pattern with a high aspect ratio, the thickness of the photosensitive layer may be 30 ⁇ m or more, 35 ⁇ m or more, 38 ⁇ m or more, 40 ⁇ m or more, or 45 ⁇ m or more; from the viewpoint of peelability, the thickness may be 100 ⁇ m or less, 90 ⁇ m or less, 80 ⁇ m or less, 70 ⁇ m or less, or 60 ⁇ m or less.
  • the support film may be a polymer film having heat resistance and solvent resistance, such as polyester films such as polyethylene terephthalate (PET), polybutylene terephthalate (PBT), and polyethylene-2,6-naphthalate (PEN), and polyolefin films such as polyethylene and polypropylene.
  • polyester films such as polyethylene terephthalate (PET), polybutylene terephthalate (PBT), and polyethylene-2,6-naphthalate (PEN), and polyolefin films such as polyethylene and polypropylene.
  • the haze of the support film may be 0.01 to 5.0%, 0.01 to 1.5%, 0.01 to 1.0%, or 0.01 to 0.5%.
  • Haze can be measured using a commercially available haze meter (turbidity meter) in accordance with the method specified in JIS K7105.
  • Haze can be measured using a commercially available turbidity meter such as the NDH-5000 (trade name, manufactured by Nippon Denshoku Industries Co., Ltd.).
  • the thickness of the support film may be 1 ⁇ m or more, 5 ⁇ m or more, or 10 ⁇ m or more, from the viewpoint of easily preventing damage to the support film when peeling it off from the photosensitive layer.
  • the thickness of the support film may be 100 ⁇ m or less, 50 ⁇ m or less, 30 ⁇ m or less, or 20 ⁇ m or less, from the viewpoint of easily and suitably facilitating exposure when exposing through the support film.
  • protective film examples include polyester films such as polyethylene terephthalate films, and polyolefin films such as polyethylene films and polypropylene films. Polyethylene films tend to be less susceptible to static electricity than polyethylene terephthalate films, polypropylene films, etc. By using a polyethylene film as the protective film, it is possible to prevent the photosensitive element from slipping during winding, and static electricity is less likely to be generated when the protective film is peeled off from the photosensitive layer, thereby preventing damage to the photosensitive layer.
  • the thickness of the protective film may be 1 ⁇ m or more, 5 ⁇ m or more, 10 ⁇ m or more, 15 ⁇ m or more, or 20 ⁇ m or more, from the viewpoint of easily preventing damage to the protective film when the photosensitive layer and support film are laminated onto the substrate while the protective film is peeled off. From the viewpoint of easily improving productivity, the thickness may be 100 ⁇ m or less, 50 ⁇ m or less, 40 ⁇ m or less, 35 ⁇ m or less, or 30 ⁇ m or less.
  • FIG. 1 is a schematic cross-sectional view showing a photosensitive element according to one embodiment.
  • the photosensitive element 1 comprises a support film 2, a photosensitive layer 3 provided on the support film 2, and a protective film 4 provided on the side of the photosensitive layer 3 opposite the support film 2.
  • the photosensitive element 1 can be obtained, for example, as follows. First, a photosensitive layer 3 is formed on a support film 2. The photosensitive layer 3 can be formed, for example, by applying a photosensitive resin composition containing an organic solvent to form a coating layer, and then drying this coating layer. Next, a protective film 4 is formed on the surface of the photosensitive layer 3 opposite the support film 2.
  • the coating layer is formed by known methods such as roll coating, comma coating, gravure coating, air knife coating, die coating, and bar coating.
  • the coating layer is dried so that the amount of organic solvent remaining in the photosensitive layer 3 is, for example, 2% by mass or less. Specifically, drying is performed at 70 to 150°C for approximately 5 to 30 minutes.
  • the photosensitive element may further include other layers such as a cushion layer, an adhesive layer, a light absorbing layer, or a gas barrier layer.
  • the photosensitive element 1 may be, for example, in the form of a sheet, or may be in the form of a photosensitive element roll wound around a core.
  • the photosensitive element 1 is preferably wound with the support film 2 on the outside.
  • the core is formed of, for example, polyethylene, polypropylene, polystyrene, polyvinyl chloride, acrylonitrile-butadiene-styrene copolymer, etc.
  • End separators may be provided on the end faces of the photosensitive element roll to protect the end faces, and moisture-proof end separators may be provided to prevent edge fusion.
  • the photosensitive element 1 may be wrapped, for example, in a black sheet with low moisture permeability.
  • the photosensitive element 1 can be suitably used to form resist patterns, and is particularly suitable for use in the wiring board manufacturing method described below.
  • the method for forming a resist pattern includes the steps of forming a photosensitive layer on a substrate using the photosensitive element (photosensitive layer formation step), irradiating at least a portion (predetermined portion) of the photosensitive layer with actinic light to form a photocured portion (exposure step), and removing at least a portion of the unphotocured portion from the substrate (development step), and may include other steps as necessary.
  • the resist pattern can also be referred to as a photocured product pattern of a photosensitive resin composition or a relief pattern.
  • the method for forming a resist pattern can also be referred to as a method for manufacturing a substrate with a resist pattern.
  • a photosensitive layer is formed on a substrate using the photosensitive element.
  • the substrate is not particularly limited, but typically includes a circuit-forming substrate having an insulating layer and a conductor layer formed on the insulating layer, or a die pad (substrate for lead frame) such as an alloy substrate.
  • One method for forming a photosensitive layer on a substrate is, for example, to remove the protective film and then heat and press the photosensitive layer of the photosensitive element onto the substrate. This results in a laminate comprising the substrate, photosensitive layer, and support film in that order.
  • the photosensitive layer forming step may be carried out under reduced pressure from the viewpoint of adhesion and conformability. Heating during pressure bonding may be carried out at a temperature of 70 to 130°C, and pressure bonding may be carried out at a pressure of 0.1 to 1.0 MPa (1 to 10 kgf/cm 2 ), but these conditions can be appropriately selected as needed. Note that if the photosensitive layer of the photosensitive element is heated to 70 to 130°C, it is not necessary to preheat the substrate in advance, but preheating the substrate may be carried out in order to further improve adhesion and conformability.
  • the photosensitive layer is exposed to actinic rays through the support film, whereby the exposed areas irradiated with the actinic rays are photocured to form photocured areas (latent images).
  • the exposure method can be any known exposure method, such as a method of irradiating actinic rays in an imagewise manner through a negative or positive mask pattern known as artwork (mask exposure method), a method of irradiating actinic rays projected from a photomask image through a lens (projection exposure method), and a method of irradiating actinic rays in an imagewise manner (direct imaging exposure method) such as LDI (Laser Direct Imaging) exposure method or DLP (Digital Light Processing) exposure method.
  • LDI Laser Direct Imaging
  • DLP Digital Light Processing
  • the source of actinic rays is not particularly limited as long as it is a commonly used, well-known light source, and examples include those that effectively emit ultraviolet rays, such as carbon arc lamps, mercury vapor arc lamps, ultra-high pressure mercury lamps, high pressure mercury lamps, xenon lamps, gas lasers such as argon lasers, solid-state lasers such as YAG lasers, and semiconductor lasers such as gallium nitride blue-violet lasers.
  • light sources capable of emitting monochromatic i-line light with a wavelength of 365 nm, light sources capable of emitting monochromatic h-line light with a wavelength of 405 nm, or light sources capable of emitting actinic rays with exposure wavelengths that are crossed by i, h, and g may be used.
  • post-exposure heat treatment step In the method for forming a resist pattern according to this embodiment, from the viewpoint of improving adhesion, post-exposure baking (PEB) may be performed after the exposure step and before the development step.
  • the temperature when performing PEB may be 50 to 100° C.
  • a hot plate, a box-type dryer, a heating roll, or the like may be used.
  • the developing step In the developing step, the support film is peeled off, and then the uncured portions of the photosensitive layer are removed from the substrate.
  • the developing step forms a resist pattern on the substrate, which is made up of photocured portions of the photosensitive layer.
  • the developing method may be wet development or dry development, and is preferably wet development.
  • wet development can be carried out by a known wet development method using a developer that is compatible with the photosensitive resin composition.
  • Wet development methods include, for example, dipping, puddling, high-pressure spraying, brushing, scrubbing, and swinging immersion. These wet development methods may be used alone or in combination of two or more methods.
  • the developer is selected appropriately depending on the composition of the photosensitive resin composition.
  • developers include alkaline aqueous solutions and organic solvent developers.
  • an alkaline aqueous solution may be used as the developer.
  • bases that can be used in alkaline aqueous solutions include alkali hydroxides such as lithium, sodium, or potassium hydroxide; alkali carbonates such as lithium, sodium, potassium, or ammonium carbonates or bicarbonates; alkali metal phosphates such as potassium phosphate and sodium phosphate; alkali metal pyrophosphates such as sodium pyrophosphate and potassium pyrophosphate; sodium borate, sodium metasilicate, tetramethylammonium hydroxide, ethanolamine, ethylenediamine, diethylenetriamine, 2-amino-2-hydroxymethyl-1,3-propanediol, 1,3-diamino-2-propanol, and morpholine.
  • alkaline aqueous solutions examples include a dilute solution of 0.1 to 5% by mass sodium carbonate, a dilute solution of 0.1 to 5% by mass potassium carbonate, a dilute solution of 0.1 to 5% by mass sodium hydroxide, and a dilute solution of 0.1 to 5% by mass sodium tetraborate.
  • the pH of the alkaline aqueous solution used for development may be in the range of 9 to 11, and the temperature of the alkaline aqueous solution can be adjusted to suit the developability of the photosensitive layer.
  • the alkaline aqueous solution may also contain, for example, a surfactant, an antifoaming agent, or a small amount of an organic solvent to promote development.
  • organic solvents used in alkaline aqueous solutions include 3-acetone alcohol, acetone, ethyl acetate, alkoxyethanols with an alkoxy group containing 1 to 4 carbon atoms, ethyl alcohol, isopropyl alcohol, butyl alcohol, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, and diethylene glycol monobutyl ether.
  • organic solvents used in organic solvent developers include 1,1,1-trichloroethane, N-methyl-2-pyrrolidone, N,N-dimethylformamide, cyclohexanone, methyl isobutyl ketone, and ⁇ -butyrolactone. To prevent ignition, these organic solvents may be used as organic solvent developers by adding water in the range of 1 to 20% by mass.
  • the method for forming a resist pattern according to this embodiment may further include a step of hardening the resist pattern by heating at 60 to 250°C or exposing at an exposure dose of 0.2 to 10 J/ cm2 , if necessary, after removing the uncured portions in the development step.
  • the method for manufacturing a wiring board according to this embodiment includes a step of forming a conductor pattern by etching or plating a substrate on which a resist pattern has been formed using the above-described resist pattern forming method, and may also include other steps such as a resist pattern removal step, as necessary.
  • etching a resist pattern formed on a substrate is used as a mask to etch away the conductive layer on the substrate, forming a conductive pattern.
  • the etching method is selected appropriately depending on the conductive layer to be removed. Examples of etching solutions include cupric chloride solution, ferric chloride solution, alkaline etching solution, and hydrogen peroxide-based etching solution.
  • a resist pattern formed on a substrate is used as a mask to plate a conductive layer formed on the substrate.
  • the resist can be removed by removing the resist pattern as described below, and the conductive layer that was covered by this resist can then be etched to form a conductive pattern.
  • Electrolytic plating can also be used as a plating method.
  • the resist pattern on the substrate is removed.
  • the resist pattern can be removed using, for example, an inorganic alkaline stripper or an organic alkaline stripper.
  • inorganic alkaline stripper solutions include a 1-10% by mass aqueous solution of sodium hydroxide and a 1-10% by mass aqueous solution of potassium hydroxide.
  • organic alkaline stripper solutions include amine-based strippers such as ethanolamine, ethylenediamine, and diethylenetriamine, and tetramethylammonium hydroxide aqueous solutions. From the perspective of the removability of thick-film resist patterns, organic alkaline stripper solutions may also be used.
  • Methods for removing resist patterns include, for example, immersion and spray methods, which may be used alone or in combination.
  • the conductor layer that was covered with the resist can be etched further by etching to form a conductor pattern, thereby producing the desired printed wiring board.
  • the etching method used in this process is selected appropriately depending on the conductor layer to be removed. For example, the etching solution described above can be used.
  • the wiring board manufacturing method according to this embodiment can be applied to the manufacture of not only single-layer wiring boards, but also multi-layer wiring boards, and can also be applied to the manufacture of wiring boards with small-diameter through holes.
  • Photosensitive resin compositions were prepared by mixing the components in the amounts (parts by mass) shown in Table 1 with 4.5 parts by mass of acetone, 16 parts by mass of toluene, and 4 parts by mass of methanol.
  • the amounts (parts by mass) of the components shown in Table 1 are the masses of the nonvolatile components (solid content). Details of the components shown in Table 1 are as follows:
  • Component (A)) A1 Ethylene glycol monomethyl ether/toluene solution (solid content: 47% by mass) of a copolymer of methacrylic acid/methyl methacrylate/styrene/benzyl methacrylate (mass ratio: 27/5/45/23, Mw: 47000, acid value: 176.1 mg KOH/g, Tg: 107°C)
  • BCIM 2,2'-bis(o-chlorophenyl)-4,4',5,5'-tetraphenyl-1,2'-biimidazole (manufactured by Hampford)
  • Photosensitive element A 16 ⁇ m thick polyethylene terephthalate film (manufactured by Toray Industries, Inc., product name "FB-40”) was prepared as a support film. The photosensitive resin composition was applied to the support film and then dried in a hot air convection dryer at 80°C and 120°C, successively to form a photosensitive layer having a thickness of 40 ⁇ m after drying. A polyethylene film (manufactured by Tamapoly Corporation, product name "NF-15”) was laminated to the photosensitive layer as a protective film, to obtain a photosensitive element comprising the support film, photosensitive layer, and protective film.
  • NF-15 polyethylene film
  • the absorption spectra of the photosensitive layer and support film were measured using an ultraviolet-visible spectrophotometer (Hitachi High-Technologies Corporation, product name "Hitachi Spectrophotometer U-3310"). The measurement was performed using a polyethylene terephthalate film (FB-40) as a reference under the following conditions: temperature 20°C, slit 2 nm, scan speed 300 nm/min, sampling interval 0.50 nm, and wavelength range 750 nm to 200 nm.
  • the light transmittance of the photosensitive layer was calculated from the absorbance at a wavelength of 405 nm.
  • the photosensitive element was stored at 15°C for 7 days, and then the protective film was peeled off.
  • the absorption spectrum of the protective film was measured using an ultraviolet-visible spectrophotometer (U-3310). The measurement was performed under the following conditions: temperature 20°C, slit width 2 nm, scan speed 300 nm/min, sampling interval 0.50 nm, and measurement range 750 nm to 200 nm. The lower the absorbance value at 405 nm derived from component (D) of the protective film, the more excellent the migration resistance.
  • Laminate L1 A copper-clad laminate (manufactured by Resonac Corporation, product name "MCL-E-67") comprising a glass epoxy material and copper foil (thickness: 16 ⁇ m) arranged on both sides thereof was pickled, rinsed with water, and then dried in an air stream. The copper-clad laminate was then heated to 80°C, and the protective film was peeled off while a photosensitive element was laminated onto the copper-clad laminate so that the photosensitive layer was in contact with the copper surface. This resulted in a laminate L1 comprising, in order, a copper-clad laminate, a photosensitive layer, and a support film. Lamination was performed using a 110°C heat roll at a compression pressure of 0.4 MPa and a roll speed of 1.0 m/min.
  • the photosensitive element described above was laminated onto a Cu-sputtered PET film (manufactured by Geomatec Co., Ltd., thickness: 125 ⁇ m) while peeling off the protective film, so that the photosensitive layer was in contact with the copper surface, to obtain a laminate L2 having, in that order, the Cu-sputtered PET film, the photosensitive layer, and the support film.
  • the lamination was performed using a heat roll at 110°C, with a pressure of 0.4 MPa and a roll speed of 1.0 m/min.
  • the laminate L1 was cut into a square (5 cm x 5 cm) and the support film was peeled off to obtain a test piece.
  • the unexposed photosensitive layer of the test piece was spray-developed at a pressure of 0.18 MPa using a 1% by mass aqueous sodium carbonate solution at 30°C, and the minimum development time (MD) was determined as the shortest time at which it was visually confirmed that at least 1 mm of the unexposed photosensitive layer had been removed.
  • a full cone type nozzle was used for spray development. The distance between the test piece and the nozzle tip was 6 cm, and the nozzle was positioned so that the center of the test piece coincided with the center of the nozzle. The shorter the minimum development time (unit: seconds), the better the developability.
  • a Hitachi 41-step step tablet was placed on the support film of laminate L1, and then the photosensitive layer was exposed through the support film using a direct imaging exposure machine (manufactured by ORC Manufacturing Co., Ltd., product name "FDi-Ms") with a blue-violet laser diode having a wavelength of 405 nm as the light source, at an exposure amount (amount of irradiation energy) such that the number of remaining steps on the Hitachi 41-step step tablet was 15.
  • the sensitivity (photosensitivity) was evaluated based on the exposure amount (unit: mJ/cm 2 ). A lower exposure amount means higher sensitivity.
  • the support film was peeled off from laminate L1 to expose the photosensitive layer, and the unexposed areas were removed by spraying a 1% by mass aqueous solution of sodium carbonate at 30°C for twice the minimum development time.
  • the space areas (unexposed areas) were removed without residue, and the line areas (exposed areas) were formed without meandering or chipping.
  • Resolution was evaluated based on the minimum space width (unit: ⁇ m) in the resist pattern, and adhesion was evaluated based on the minimum line width (unit: ⁇ m) in the resist pattern. For both resolution and adhesion, the smaller the numerical value, the better the performance.
  • the support film was peeled off from laminate L2 to expose the photosensitive layer, and the unexposed areas were removed by spraying a 1% by mass aqueous solution of sodium carbonate at 30°C for twice the minimum development time.
  • the formed via pattern (via hole pattern) was observed with an optical microscope, and the round hole resolution was evaluated based on the value of the smallest via pattern diameter among the via patterns arranged in a grid pattern that were completely removed (opened). The smaller this value, the better the round hole resolution.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)

Abstract

Le présent élément photosensible comprend, dans l'ordre, un film de support, une couche photosensible et un film de protection. La couche photosensible contient un polymère liant, un composé photopolymérisable, un initiateur de photopolymérisation et un sensibilisateur à base d'anthracène. Le sensibilisateur à base d'anthracène comprend un composé anthracène qui a un groupe alcoxy ayant au plus 3 atomes de carbone (C3 ou inférieur) à la position 9 et à la position 10 d'un cycle anthracène. L'épaisseur de la couche photosensible est d'au moins 30 µm, et la transmittance de lumière de la couche photosensible est de 25,0 % à 95,0 % à une longueur d'onde de 405 nm.
PCT/JP2024/015031 2024-04-15 2024-04-15 Élément photosensible, procédé de formation de motif de réserve et procédé de production de carte de câblage Pending WO2025220085A1 (fr)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004302389A (ja) * 2003-04-01 2004-10-28 Jsr Corp 感光性樹脂膜およびこれからなる硬化膜
WO2007004619A1 (fr) * 2005-07-05 2007-01-11 Hitachi Chemical Company, Ltd. Composition de résine photosensitive et élément photosensible, procédé de formation d'un motif de photorésist, procédé de fabrication d'un tableau de connexions imprimé et procédé de fabrication d'une paroi de séparation pour
WO2007026520A1 (fr) * 2005-08-30 2007-03-08 Jsr Corporation Composition de résine photosensible et procédé de production d’article formé plaqué
JP2007101944A (ja) * 2005-10-05 2007-04-19 Asahi Kasei Electronics Co Ltd 感光性樹脂組成物及び積層体
WO2015016362A1 (fr) * 2013-08-02 2015-02-05 日立化成株式会社 Composition de résine photosensible
JP2020064318A (ja) * 2017-03-01 2020-04-23 旭化成株式会社 感光性樹脂組成物

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004302389A (ja) * 2003-04-01 2004-10-28 Jsr Corp 感光性樹脂膜およびこれからなる硬化膜
WO2007004619A1 (fr) * 2005-07-05 2007-01-11 Hitachi Chemical Company, Ltd. Composition de résine photosensitive et élément photosensible, procédé de formation d'un motif de photorésist, procédé de fabrication d'un tableau de connexions imprimé et procédé de fabrication d'une paroi de séparation pour
WO2007026520A1 (fr) * 2005-08-30 2007-03-08 Jsr Corporation Composition de résine photosensible et procédé de production d’article formé plaqué
JP2007101944A (ja) * 2005-10-05 2007-04-19 Asahi Kasei Electronics Co Ltd 感光性樹脂組成物及び積層体
WO2015016362A1 (fr) * 2013-08-02 2015-02-05 日立化成株式会社 Composition de résine photosensible
JP2020064318A (ja) * 2017-03-01 2020-04-23 旭化成株式会社 感光性樹脂組成物

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