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WO2025216049A1 - Procédé de traitement de substrat, support de stockage et dispositif de traitement de substrat - Google Patents

Procédé de traitement de substrat, support de stockage et dispositif de traitement de substrat

Info

Publication number
WO2025216049A1
WO2025216049A1 PCT/JP2025/011785 JP2025011785W WO2025216049A1 WO 2025216049 A1 WO2025216049 A1 WO 2025216049A1 JP 2025011785 W JP2025011785 W JP 2025011785W WO 2025216049 A1 WO2025216049 A1 WO 2025216049A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
rotation
liquid
rotation speed
workpiece
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/JP2025/011785
Other languages
English (en)
Japanese (ja)
Inventor
幸一 本武
祐作 橋本
拓也 三浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of WO2025216049A1 publication Critical patent/WO2025216049A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Definitions

  • This disclosure relates to a substrate processing method, a storage medium, and a substrate processing apparatus.
  • Patent Document 1 discloses a liquid processing method that includes supplying a processing liquid to the surface of a substrate held at a processing position, and holding the substrate so that a coating of the processing liquid is formed on the surface of the substrate after the processing liquid has been supplied. Furthermore, Patent Document 1 discloses a substrate processing method that includes, prior to the liquid processing, performing a process to adjust the temperatures of components that affect the temperature of the substrate during the liquid processing.
  • This disclosure provides a substrate processing method, storage medium, and substrate processing apparatus that can suppress the occurrence of defects on substrates exposed to I-rays.
  • a substrate processing method includes a coating step of coating an I-line resist on a surface of a substrate to form an I-line resist film, an exposure step of performing an exposure process on the I-line resist film, and a development step of supplying a developer to the surface of the substrate after the exposure step.
  • the substrate processing method also includes a rinsing step of supplying a rinse liquid to the surface of the substrate after the development step, and a drying step of drying the rinse liquid by rotating the substrate after the rinsing step.
  • the drying step includes a first rotation step of rotating the substrate at a first rotation speed of 2000 rpm or more and 2500 rpm or less, and a second rotation step of rotating the substrate at a second rotation speed higher than the first rotation speed after the first rotation step.
  • This disclosure provides technology that can suppress the occurrence of defects on substrates exposed to I-rays.
  • FIG. 1 is a perspective view showing an example of a substrate processing system.
  • FIG. 2 is a side view schematically showing the inside of the substrate processing system of FIG.
  • FIG. 3 is a top view schematically showing the inside of the substrate processing system of FIG.
  • FIG. 4 is a side view schematically illustrating an example of a liquid processing unit.
  • FIG. 5 is a side view showing an example of a nozzle unit.
  • FIG. 6 is a block diagram showing an example of the hardware configuration of the controller.
  • FIG. 7 is a graph illustrating the phenomenon of cooling of workpieces that are processed successively.
  • FIG. 8 is a graph illustrating the temperature drop of the wafer depending on the rotation speed.
  • FIG. 9 is a graph showing the CD drift state as a function of the rotation speed.
  • FIG. 1 is a perspective view showing an example of a substrate processing system.
  • FIG. 2 is a side view schematically showing the inside of the substrate processing system of FIG.
  • FIG. 3 is a top view schematic
  • FIG. 10 is a table illustrating the state after drying for each rotation speed condition.
  • FIG. 11 is a diagram illustrating the drying step in the substrate processing method according to this embodiment.
  • FIG. 12 is a table showing particle confirmation results for each combination of rotation speeds.
  • FIG. 13 is a table showing the CD drift state for each combination of rotation speeds.
  • FIG. 14 is a diagram illustrating an example of the drying process.
  • FIG. 15 is a diagram illustrating an example of the drying process.
  • FIG. 16 is a diagram illustrating an example of the drying process.
  • FIG. 17 is a diagram illustrating an example of the drying process.
  • FIG. 18 is a diagram illustrating an example of the drying process.
  • FIG. 19 is a flowchart showing an example of a substrate processing method.
  • a substrate processing method is a method for processing a substrate that has been subjected to an exposure process after an I-line resist has been applied to its surface, and includes a developing process in which a developer is supplied to the surface of the substrate.
  • the substrate processing method also includes a rinsing process in which a rinse liquid is supplied to the surface of the substrate after the developing process, and a drying process in which the rinse liquid is dried by rotating the substrate after the rinsing process.
  • the drying process includes a first rotation process in which the substrate is rotated at a first rotation speed of 2000 rpm or more and 2500 rpm or less, and a second rotation process in which the substrate is rotated at a second rotation speed higher than the first rotation speed after the first rotation process.
  • the substrate in the drying step following the rinsing step, is first rotated at a first rotation speed of 2000 rpm or more and 2500 rpm or less, and then rotated at a second rotation speed higher than the first rotation speed.
  • first rotation speed 2000 rpm or more and 2500 rpm or less
  • second rotation speed higher than the first rotation speed.
  • the substrate processing method of this embodiment divides the drying process into two stages: a first rotation stage in which the substrate is rotated at a relatively low first rotation speed, and a second rotation stage in which the substrate is rotated at a relatively high second rotation speed after the first rotation stage.
  • this first rotation stage which involves a relatively low rotation speed
  • the rinse liquid film which is initially thick
  • the second rotation stage is then performed when the liquid film has thinned and mist generation is less likely, thereby achieving the aforementioned CD drift suppression effect without generating mist.
  • the substrate processing method of this embodiment divides the drying process into two stages with different substrate rotation speeds, thereby suppressing CD drift due to high-speed rotation while suppressing mist generation. This reduces the occurrence of defects in substrates exposed to I-line radiation.
  • the second rotation speed may be 4000 rpm or higher.
  • the rotation time in the second rotation step may be shorter than the rotation time in the first rotation step.
  • High-speed rotation allows the substrate to be dried efficiently, so the rotation time can be shortened, and the time it takes for the substrate to cool down due to the heat of vaporization can be appropriately shortened.
  • the rotation time in the first rotation step may be 10 seconds or less. In this way, by ensuring that the rotation time is sufficient (enough to thin the liquid film so that mist is not generated in the subsequent stage), the time it takes for the substrate to cool due to the heat of vaporization can be appropriately shortened.
  • the rotation time in the second rotation step may be 7 seconds or less.
  • the first rotation speed and rotation time in the first rotation step may be set so that, at the completion of the first rotation step, the amount of rinse liquid on the surface of the substrate is less than half of the amount immediately after the completion of the rinse step. This allows the liquid film to be sufficiently thinned in the first rotation step, and the generation of mist in the subsequent second rotation step can be suppressed.
  • the second rotation speed and rotation time in the second rotation step may be set so that, in the second rotation step, the rinse liquid is shaken off in a state where the liquid film is thicker on the periphery of the substrate than in the center. This allows the rinse liquid to be shaken off efficiently and quickly.
  • the second rotation speed may be higher than the rotation speed of the substrate in the development process and the rotation speed of the substrate in the rinsing process. In this way, by making the second rotation speed higher than the normal rotation speed (the rotation speed of other processes), the substrate can be dried efficiently and the time it takes for the substrate to cool down due to the heat of vaporization can be appropriately shortened.
  • inert gas is ejected onto the center of the substrate, and then ejected while changing the position from the center to the periphery of the substrate.
  • inert gas continues to be ejected onto the substrate from the first rotation process, and ejection of inert gas may be stopped upon completion of the second rotation process.
  • an inert gas may be ejected so that the rinse liquid film moves toward the outer periphery of the substrate and becomes more uniform on the surface of the substrate, and the ejection of the inert gas may be stopped before the start of the second rotation step.
  • the ejection of the inert gas uniformizes the liquid film, thereby uniforming the effect of heat of vaporization on the surface of the substrate and suppressing CD drift.
  • the uniformity of the liquid film can shorten the time required to complete drying (rotation time) in the second rotation step, thereby shortening the time required for the substrate to cool down due to the effect of heat of vaporization.
  • the effect of heat of vaporization caused by the ejection of the inert gas can be avoided.
  • the above substrate processing method may further include a substitution step, after the rinsing step and before the first rotation step, of replacing the rinsing liquid with a chemical liquid having a higher vapor pressure than pure water. This allows the drying step to be carried out in an environment where drying is more likely to proceed, and shortens the time required to dry the substrate (the time it takes for the substrate to cool due to the heat of vaporization).
  • a high-temperature rinse solution of 35°C or higher and 60°C or lower may be supplied to the surface of the substrate. This allows the drying process to be carried out in an environment that facilitates drying, and shortens the time required to dry the substrate (the time it takes for the substrate to cool due to the heat of vaporization).
  • the developer may be supplied to the surface of the substrate that has been cooled by a substrate temperature adjustment unit set to 25°C or higher after the exposure process. This allows the drying process to be carried out in an environment that is conducive to drying, and shortens the time required to dry the substrate (the time it takes for the substrate to cool due to the heat of vaporization).
  • the storage medium is a computer-readable storage medium that stores a program for causing an apparatus to execute the substrate processing method.
  • a substrate processing apparatus includes a liquid processing apparatus that dries the rinse liquid by rotating the substrate, the surface of which has been supplied with the rinse liquid, after a development process, and a control device that controls the liquid processing apparatus.
  • the control device controls the liquid processing apparatus to rotate the substrate at a first rotation speed of 2000 rpm or more and 2500 rpm or less, and controls the liquid processing apparatus to rotate the substrate at a second rotation speed higher than the first rotation speed after the first rotation process.
  • the substrate processing system 1 includes a coating and developing apparatus 2 (liquid processing apparatus) and an exposure apparatus 3.
  • the coating and developing apparatus 2 is configured to form a resist film R on the surface Wa of the workpiece W.
  • the coating and developing apparatus 2 is also configured to perform a development process on the resist film R.
  • the exposure apparatus 3 is configured to transfer the workpiece W between the coating and developing apparatus 2 and perform an exposure process (pattern exposure) on the resist film R formed on the surface Wa of the workpiece W (see Figure 4, etc.).
  • the exposure apparatus 3 may selectively irradiate energy rays onto the exposure target portion of the resist film R using a method such as immersion exposure.
  • the workpiece W to be processed is, for example, a substrate, or a substrate on which a film or circuit has been formed by a predetermined process.
  • a substrate included in the workpiece W is a wafer containing silicon.
  • the workpiece W (substrate) may be circular, or may be formed in a non-circular plate shape such as a polygonal shape.
  • the workpiece W may have a cutout portion cut out of a portion.
  • the cutout portion may be, for example, a notch (a U-shaped, V-shaped groove, etc.) or a linear portion extending in a straight line (a so-called orientation flat).
  • the workpiece W to be processed may be a glass substrate, a mask substrate, an FPD (Flat Panel Display), etc., or may be an intermediate product obtained by performing a predetermined process on such a substrate.
  • the diameter of the workpiece W may be, for example, approximately 200 mm to 450 mm.
  • the energy ray may be, for example, ionizing radiation or non-ionizing radiation.
  • Ionizing radiation is radiation that has enough energy to ionize atoms or molecules.
  • Ionizing radiation may be, for example, extreme ultraviolet (EUV), electron beams, ion beams, X-rays, alpha rays, beta rays, gamma rays, heavy particle beams, proton beams, etc.
  • Non-ionizing radiation is radiation that does not have enough energy to ionize atoms or molecules.
  • Non-ionizing radiation may be, for example, g-rays, i-rays, KrF excimer lasers, ArF excimer lasers, F2 excimer lasers, etc.
  • the coating and developing apparatus 2 is configured to form a resist film R on the surface Wa of the workpiece W before the exposure process by the exposure device 3.
  • the coating and developing apparatus 2 is also configured to perform a development process on the resist film R after the exposure process by the exposure device 3.
  • the coating and developing apparatus 2 includes a carrier block 4, a processing block 5, an interface block 6, and a control device 100.
  • the carrier block 4, processing block 5, and interface block 6 are aligned horizontally.
  • the carrier block 4 includes a carrier station 12 and a loading/unloading section 13.
  • the carrier station 12 supports a plurality of carriers 11.
  • Each carrier 11 stores at least one workpiece W in a sealed state.
  • a door (not shown) is provided on the side 11a of the carrier 11 for loading and unloading the workpiece W.
  • the carrier 11 is detachably installed on the carrier station 12 with the side 11a facing the loading/unloading section 13.
  • the loading/unloading section 13 is located between the carrier station 12 and the processing block 5. As shown in Figures 1 and 3, the loading/unloading section 13 has multiple doors 13a. When a carrier 11 is placed on the carrier station 12, the doors of the carrier 11 face the doors 13a. By simultaneously opening the doors 13a and the doors on the side 11a, the inside of the carrier 11 and the inside of the loading/unloading section 13 are connected. As shown in Figures 2 and 3, the loading/unloading section 13 incorporates a transport arm A1.
  • the transport arm A1 is configured to remove a workpiece W from the carrier 11 and deliver it to the processing block 5, and to receive a workpiece W from the processing block 5 and return it to the carrier 11.
  • processing block 5 includes processing modules PM1 to PM4.
  • the processing module PM1 is configured to form an underlayer film on the surface of the workpiece W and is also called a BCT module. As shown in FIG. 3, the processing module PM1 includes a liquid processing unit U1, a heat processing unit U2, and a transport arm A2 configured to transport the workpiece W to these units.
  • the liquid processing unit U1 of the processing module PM1 may be configured, for example, to apply a coating liquid for forming an underlayer film to the workpiece W.
  • the heat processing unit U2 of the processing module PM1 may be configured, for example, to perform heat treatment to harden the coating film formed on the workpiece W by the liquid processing unit U1 to form an underlayer film.
  • An example of an underlayer film is an anti-reflective (SiARC) film.
  • the processing module PM2 is configured to form an intermediate film (hard mask) on the underlying film, and is also called an HMCT module.
  • the processing module PM2 includes a liquid processing unit U1, a heat processing unit U2, and a transport arm A3 configured to transport the workpiece W to these.
  • the liquid processing unit U1 of the processing module PM2 may be configured, for example, to apply a coating liquid for forming the intermediate film to the workpiece W.
  • the heat processing unit U2 of the processing module PM2 may be configured, for example, to perform heat treatment to harden the coating film formed on the workpiece W by the liquid processing unit U1 to form an intermediate film.
  • intermediate films include an SOC (Spin On Carbon) film and an amorphous carbon film.
  • the processing module PM3 is configured to form a thermosetting, photosensitive resist film R on the intermediate film, and is also called a COT module.
  • the processing module PM3 includes a liquid processing unit U1, a heat processing unit U2, and a transport arm A4 configured to transport the workpiece W to these.
  • the liquid processing unit U1 of the processing module PM3 may be configured, for example, to apply a coating liquid (resist liquid) for forming a resist film to the workpiece W.
  • the heat processing unit U2 of the processing module PM3 may be configured, for example, to perform a heating process (PAB: Pre Applied Bake) to harden the coating film formed on the workpiece W by the liquid processing unit U1 and turn it into the resist film R.
  • PAB Pre Applied Bake
  • the resist material contained in the resist liquid may be a positive resist material or a negative resist material.
  • a positive resist material is a resist material in which the patterned exposed areas dissolve, leaving patterned unexposed areas (light-shielding areas).
  • a negative resist material is a resist material in which the patterned unexposed areas (light-shielding areas) dissolve, leaving patterned exposed areas.
  • the resist liquid will be described as an I-line resist. I-line resists have a higher temperature sensitivity than other light-source resists.
  • the processing module PM4 is configured to perform a development process on the exposed resist film, and is also called a DEV module.
  • the processing module PM4 includes a liquid processing unit U1, a thermal processing unit U2, and a transport arm A5 configured to transport the workpiece W to these.
  • the liquid processing unit U1 of the processing module PM4 is configured to perform a development process (liquid processing) on the workpiece W using a solution such as a developer. For example, it may be configured to partially remove the resist film R to form a resist pattern (not shown).
  • the thermal processing unit U2 of the processing module PM4 may be configured to perform, for example, a heating process before the development process (PEB: Post Exposure Bake), a heating process after the development process (PB: Post Bake), etc.
  • the processing block 5 includes a shelf unit 14 located near the carrier block 4.
  • the shelf unit 14 extends vertically and includes multiple cells aligned vertically.
  • a transport arm A6 is provided near the shelf unit 14. The transport arm A6 is configured to raise and lower the workpiece W between the cells of the shelf unit 14.
  • the processing block 5 includes a shelf unit 15 located near the interface block 6.
  • the shelf unit 14 extends vertically and includes multiple cells aligned vertically.
  • the interface block 6 incorporates a transport arm A7 and is connected to the exposure device 3.
  • the transport arm A7 is configured to remove the workpiece W from the shelf unit 15 and pass it to the exposure device 3, and to receive the workpiece W from the exposure device 3 and return it to the shelf unit 15.
  • the liquid processing unit U1 includes a substrate holding part 20 (substrate holding unit), a supply part 30, a supply part 40, a cover member 70, and a blower B within a housing H.
  • the lower part of the housing H is provided with an exhaust section V1 that is configured to exhaust gas from inside the housing H by operating based on a signal from the control device 100.
  • the exhaust section V1 may be, for example, a damper whose exhaust volume can be adjusted according to its opening. By adjusting the volume of gas exhausted from the housing H using the exhaust section V1, it is possible to control the temperature, pressure, humidity, etc. inside the housing H.
  • the exhaust section V1 may be controlled to constantly exhaust gas from inside the housing H during liquid processing of the workpiece W.
  • the substrate holding unit 20 is configured to hold and rotate the workpiece W.
  • the substrate holding unit 20 holds and rotates the workpiece W with its front surface Wa facing upward.
  • the substrate holding unit 20 includes a rotating unit 21, a shaft 22, and a holding unit 23.
  • the rotating unit 21 is configured to operate based on an operating signal from the control device 100 and rotate the shaft 22.
  • the rotating unit 21 is a power source, such as an electric motor.
  • the holding unit 23 is provided at the tip of the shaft 22.
  • the workpiece W is placed on the holding unit 23 with its surface Wa facing upward.
  • the holding unit 23 is configured to hold the workpiece W approximately horizontally, for example, by suction.
  • the substrate holding unit 20 rotates the workpiece W around a central axis (rotation axis) perpendicular to the surface Wa of the workpiece W while the workpiece W is in an approximately horizontal position.
  • the surface Wa of the workpiece W held by the substrate holding unit 20 is along the X-Y plane.
  • the supply unit 30 is configured to supply the developer L1 to the surface Wa of the workpiece W.
  • the supply unit 30 includes a supply mechanism 31, a drive mechanism 32, and a nozzle 33.
  • the supply mechanism 31 is configured to send out the developer L1 stored in a container (not shown) using a liquid delivery mechanism (not shown), such as a pump, based on a signal from the control device 100.
  • the drive mechanism 32 is configured to move the nozzle 33 in the vertical and horizontal directions based on a signal from the control device 100.
  • the nozzle 33 is configured to eject the developer L1 supplied from the supply mechanism 31 onto the surface Wa of the workpiece W.
  • the supply unit 40 is configured to supply the rinse liquid L2, the gas G1, and the gas G2 to the surface Wa of the workpiece W.
  • the configuration of the supply unit 40 described here is an example and is not limited to this configuration.
  • the gas G1 and the gas G2 are not particularly limited as long as they are gases, but may be an inert gas (e.g., nitrogen).
  • the temperatures of the gas G1 and the gas G2 may be approximately 20°C to 25°C.
  • the supply unit 40 includes supply mechanisms 41A to 41C and a nozzle unit 43. Note that the gas G1 and the gas G2 may be supplied from the same supply source, for example. At least upstream of the nozzle unit 43, the supply flow paths are separated, and the gases are supplied via different flow paths within the nozzle unit 43.
  • supply mechanism 41A is configured to send out gas G1 stored in a container (not shown) using an air supply mechanism (not shown) such as a pump based on a signal from control device 100.
  • Supply mechanism 41B is configured to send out gas G2 stored in a container (not shown) using an air supply mechanism (not shown) such as a pump based on a signal from control device 100.
  • Supply mechanism 41C is configured to send out rinse liquid L2 stored in a container (not shown) using a liquid supply mechanism (not shown) such as a pump based on a signal from control device 100.
  • the nozzle unit 43 is configured to eject the gas G1, gas G2, and rinse liquid L2 supplied from the supply mechanisms 41A to 41C onto the surface Wa of the workpiece W.
  • the nozzle unit 43 includes a holding arm 44, a gas nozzle 45, a gas nozzle 46, processing liquid nozzles 47 and 49, and a drive unit 50 that moves these nozzles by moving the holding arm 44.
  • a drive unit 50 that moves these nozzles by moving the holding arm 44.
  • the holding arm 44 is configured to hold the gas nozzle 45, the gas nozzle 46, and the processing liquid nozzles 47 and 49.
  • the holding arm 44 includes, for example, a horizontal portion 44a extending horizontally (in the X-axis direction in the figure) and a vertical portion 44b extending vertically.
  • One end of the horizontal portion 44a may be connected to the drive unit 50 at a position that does not overlap with the workpiece W held by the substrate holder 20.
  • the upper end of the vertical portion 44b is connected to the other end of the horizontal portion 44a.
  • the vertical portion 44b extends downward (in the -Z direction) from the tip of the horizontal portion 44a toward the surface Wa of the workpiece W.
  • a gas flow path 42a may be provided inside the holding arm 44, through which the gas G1 supplied from the supply mechanism 41A flows. Furthermore, a gas flow path 42b through which gas G2 supplied from supply mechanism 41B flows, and a processing liquid flow path 42c through which rinse liquid L2 supplied from supply mechanism 41C flows, may be provided inside holding arm 44. Furthermore, a processing liquid flow path 42d through which the processing liquid supplied from supply mechanism 41C flows may be provided inside holding arm 44. Note that in FIG.
  • gas flow paths 42a, 42b and processing liquid flow paths 42c, 42d within holding arm 44 are indicated by dashed lines, but the flow path diameter of each flow path is adjusted appropriately depending on the type of gas or processing liquid being passed, the flow rate per unit time, etc.
  • the gas nozzle 45 is configured to eject gas G2 toward the surface Wa of the workpiece W.
  • the gas nozzle 45 may eject gas G2 from above the surface Wa in a direction approximately perpendicular to the surface Wa.
  • the ejection direction of gas G2 from the gas nozzle 45 is approximately perpendicular to the surface Wa.
  • the gas nozzle 45 is provided at the lower end of the vertical portion 44b of the holding arm 44.
  • the gas nozzle 45 is provided with a gas flow path 45a extending in the vertical direction.
  • the gas flow path 45a passes through the horizontal portion 44a of the holding arm 44 and is continuous with the gas flow path 42b, which extends to the lower end of the vertical portion 44b.
  • the gas nozzle 45 includes an outlet 45b that discharges the gas G2 supplied to the gas flow path 45a via the gas flow path 42b toward the surface Wa.
  • the outlet 45b is provided, for example, on the lower end surface of the gas nozzle 45 and opens at that lower end surface.
  • the shape (outline) of the outlet 45b may be circular when viewed from the discharge direction of the gas G2 (the Z-axis direction in the figure).
  • the gas nozzle 46 is configured to eject gas G1 toward the surface Wa of the workpiece W.
  • the gas nozzle 46 ejects gas G1 radially toward the surface Wa from above the surface Wa.
  • the gas nozzle 46 ejects gas G1 along multiple different angles relative to the surface Wa when viewed from the X-axis direction.
  • the gas nozzle 46 may eject gas G1 uniformly within a radial ejection range.
  • the gas nozzle 46 may eject gas G1 in one direction inclined relative to the surface Wa when viewed from the Y-axis direction.
  • the gas nozzle 46 is fixed to the lower end of the horizontal portion 44a of the holding arm 44, below the vertical portion 44b.
  • the gas nozzle 46 may be detachable from the holding arm 44. If the gas nozzle 46 is detachable, the gas nozzle 46 may be configured to be detachable depending on the application of the nozzle unit 43, etc.
  • the gas nozzle 46 can also be attached and detached when installing the nozzle unit 43, etc.
  • the gas nozzle 46 is provided with a gas flow path 51 that is continuous with the gas flow path 42a, through which the gas G1 supplied from the supply mechanism 41A flows.
  • the gas flow path 42a opens at the lower end of the horizontal portion 44a of the holding arm 44.
  • the gas flow path 51 is formed so as to be continuous with the opening at the lower end of the gas flow path 42a.
  • the gas nozzle 46 also includes an outlet 52 that discharges the gas G1 flowing through the gas flow path 51 toward the surface Wa of the workpiece W.
  • the gas nozzle 46 has a block-shaped main body 53 that forms the gas flow path 51 therein, and the outlet 52 opens on at least one surface included in the main body 53.
  • the gas flow path 51 includes a supply flow path 55 located on the upstream side and a discharge flow path 56 located on the downstream side.
  • a supply flow path 55 located on the upstream side and a discharge flow path 56 located on the downstream side.
  • upstream and downstream are used with reference to the flow of gas or liquid.
  • One upstream end of the supply flow path 55 is connected to the gas flow path 42a provided inside the horizontal portion 44a of the holding arm 44, and the other downstream end of the supply flow path 55 is connected to one upstream end of the discharge flow path 56.
  • a discharge port 52 is provided at the other downstream end of the discharge flow path 56.
  • the supply flow path 55 flows the gas G1, for example, vertically downward.
  • the supply flow path 55 can be a linear flow path that extends in a predetermined direction (up and down) and has a constant inner diameter.
  • the discharge flow path 56 flows the gas G1 along the extension direction of an inclined surface D0 that is inclined at a predetermined angle relative to the surface Wa of the workpiece W, allowing the gas G1 to reach the discharge port 52.
  • the discharge flow path 56 flows the gas G1 in one direction along the inclined surface D0, and then spreads the flow direction of the gas G1 radially.
  • the direction D1 in which the gas G1 flows before spreading radially in the discharge flow path 56 is inclined relative to the surface Wa of the workpiece W, for example, when viewed from the Y-axis direction.
  • the processing liquid nozzle 47 is configured to eject rinse liquid L2 toward the surface Wa of the workpiece W.
  • the processing liquid nozzle 47 ejects rinse liquid L2, for example, from above the surface Wa in a direction different from perpendicular to the surface Wa.
  • the ejection direction of rinse liquid L2 from the processing liquid nozzle 47 is inclined with respect to the surface Wa, and when viewed from the X-axis direction, the ejection direction is approximately perpendicular to the surface Wa.
  • the processing liquid nozzle 47 is connected to the holding arm 44 via a holder 48.
  • the holder 48 is connected to the side of the vertical portion 44b of the holding arm 44 (the surface opposite the surface facing the gas nozzle 46), and the processing liquid nozzle 47 is attached below the holder 48.
  • a processing liquid flow path 42c which circulates the rinse liquid L2 supplied from the supply mechanism 41C, is connected to the processing liquid nozzle 47.
  • the processing liquid flow path 42c may be provided, for example, inside the horizontal portion 44a of the holding arm 44, outside the holding arm 44, or inside the holder 48. If the processing liquid flow path 42c is provided outside the holding arm 44, a coating material or the like may be provided to cover the processing liquid flow path 42c.
  • the processing liquid nozzle 47 is provided with a processing liquid flow path 47a extending in the direction of ejection of the rinse liquid L2.
  • the processing liquid flow path 47a is continuous with the end of the processing liquid flow path 42c provided in the holder 48.
  • the processing liquid nozzle 47 includes a discharge port 47b (processing liquid discharge port) that discharges the rinse liquid L2 supplied via the processing liquid flow path 47a toward the surface Wa.
  • the discharge port 47b is provided, for example, on the lower end surface of the processing liquid nozzle 47 and opens at the lower end surface.
  • the shape (outline) of the discharge port 47b may be circular when viewed from the discharge direction of the rinse liquid L2.
  • the nozzle unit 43 may have a second processing liquid nozzle 49.
  • the processing liquid nozzle 49 is configured to eject processing liquid toward the surface Wa of the workpiece W.
  • the processing liquid ejected from the processing liquid nozzle 49 may be the same type as the rinse liquid L2 ejected from the processing liquid nozzle 47, or may be a processing liquid different from the rinse liquid L2.
  • a rinse liquid (cleaning liquid) similar to the rinse liquid L2 may be used as the processing liquid ejected from the processing liquid nozzle 49.
  • pure water may be selected as the rinse liquid (cleaning liquid) used as the rinse liquid L2
  • an aqueous solution of a surfactant may be selected as the processing liquid ejected from the processing liquid nozzle 49.
  • the processing liquid nozzle 49 may eject processing liquid from above the surface Wa in a direction approximately perpendicular to the surface Wa. When viewed from both the Y-axis and X-axis directions, the ejection direction of the processing liquid from the second processing liquid nozzle 49 is approximately perpendicular to the surface Wa.
  • the processing liquid nozzle 49 is provided at the lower end of the vertical portion 44b of the holding arm, similar to the gas nozzle 45.
  • the gas nozzle 45 and processing liquid nozzle 49 are aligned along the Y-axis direction.
  • the processing liquid nozzle 49 has the same shape as the gas nozzle 45. That is, the processing liquid nozzle 49 has a processing liquid flow path that extends vertically, continuing from the processing liquid flow path 42d that passes through the horizontal portion 44a of the holding arm 44 and extends to the lower end of the vertical portion 44b.
  • the processing liquid nozzle 49 includes an outlet 49b that ejects the processing liquid supplied to the processing liquid flow path via the processing liquid flow path 42d toward the surface Wa.
  • the outlet 49b is provided, for example, on the lower end surface of the second processing liquid nozzle 49 and opens at that lower end surface.
  • the shape (outline) of the outlet 49b may be circular when viewed from the ejection direction of the processing liquid (the Z-axis direction in the figure).
  • the drive unit 50 is configured to move the holding arm 44 in the height direction and horizontal direction (the direction along the surface Wa of the workpiece W) based on a signal from the control device 100.
  • the drive unit 50 is connected, for example, to the base end of the horizontal portion 44a of the holding arm 44 as described above.
  • the drive unit 50 may include a linear actuator that displaces the holding arm 44 in the direction in which the outlet 52 of the gas nozzle 46 extends (the Y-axis direction), and an elevation actuator that displaces the holding arm 44 in the Z-axis direction.
  • the drive unit 50 does not necessarily have to include a linear actuator that displaces the holding arm 44 in the X-axis direction. As the drive unit 50 displaces the holding arm 44, the gas nozzle 45, gas nozzle 46, processing liquid nozzle 47, and processing liquid nozzle 49 all move.
  • the cover member 70 is provided around the substrate holding portion 20.
  • the cover member 70 includes a cup body 71, a drainage outlet 72, and an exhaust outlet 73.
  • the cup body 71 is configured as a liquid collection container that receives the developer L1 and rinse liquid L2 supplied to the workpiece W for processing the workpiece W.
  • the drainage outlet 72 is provided at the bottom of the cup body 71, and is configured to discharge the waste liquid collected by the cup body 71 to the outside of the liquid processing unit U1.
  • the exhaust port 73 is provided at the bottom of the cup body 71.
  • the exhaust port 73 is provided with an exhaust section V2 that is configured to exhaust gas from the cup body 71 by operating based on a signal from the control device 100. Therefore, the downward flow that flows around the workpiece W is discharged to the outside of the liquid processing unit U1 through the exhaust port 73 and the exhaust section V2.
  • the exhaust section V2 may be, for example, a damper whose exhaust volume can be adjusted according to its opening. By adjusting the exhaust volume from the cup body 71 using the exhaust section V2, the temperature, pressure, humidity, etc. within the cup body 71 can be controlled.
  • Blower B is positioned above the substrate holder 20 and cover member 70 in the liquid processing unit U1. Blower B is configured to create a downward flow toward the cover member 70 based on a signal from the control device 100. Blower B may be controlled to constantly create a downward flow during liquid processing of the workpiece W.
  • the control device 100 is configured to partially or entirely control the elements of the coating and developing apparatus 2.
  • the control device 100 controls the liquid processing unit U1, which includes at least the nozzle unit 43 and the substrate holder 20.
  • Each functional module of the control device 100 is not limited to being realized by executing a program, but may also be realized by a dedicated electrical circuit (e.g., a logic circuit) or an integrated circuit (ASIC: Application Specific Integrated Circuit) that integrates such a circuit.
  • the control device 100 is configured to read a program from a computer-readable recording medium.
  • the recording medium records a program for operating each part of the coating and developing apparatus 2.
  • the recording medium may be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a magneto-optical recording disk.
  • the control device 100 is configured to store various data.
  • the control device 100 may store, for example, a program read from a recording medium, setting data input by an operator via an external input device (not shown), etc.
  • the program may be configured to operate each part of the coating and developing apparatus 2.
  • the control device 100 is configured to process various data.
  • the control device 100 may, for example, generate signals for operating the liquid processing unit U1, heat processing unit U2, etc. based on the various stored data.
  • the control device 100 is configured to transmit the generated operation signals to the various devices.
  • the hardware of the control device 100 may be configured, for example, by one or more control computers. As shown in FIG. 6, the control device 100 includes a circuit C1 as a hardware configuration.
  • the circuit C1 may be configured with electrical circuitry.
  • the circuit C1 may include a processor C2, a memory C3, a storage C4, a driver C5, and an input/output port C6.
  • Processor C2 executes programs in cooperation with at least one of memory C3 and storage C4, and performs input and output of signals via input/output port C6, thereby configuring the above-mentioned functional modules.
  • Memory C3 and storage C4 function as memory unit 2.
  • Driver C5 is a circuit that drives each of the various devices in the coating and developing apparatus 2.
  • Input/output port C6 inputs and outputs signals between driver C5 and the various devices in the coating and developing apparatus 2 (e.g., liquid processing unit U1, heat processing unit U2, etc.).
  • the coating and developing apparatus 2 may include a single control device 100, or may include a controller group (control unit) composed of multiple control devices 100. If the coating and developing apparatus 2 includes a controller group, each of the above-mentioned functional modules may be implemented by a single control device 100, or may be implemented by a combination of two or more control devices 100. If the control device 100 is composed of multiple computers (circuits C1), each of the above-mentioned functional modules may be implemented by a single computer (circuit C1), or may be implemented by a combination of two or more computers (circuits C1). The control device 100 may have multiple processors C2. In this case, each of the above-mentioned functional modules may be implemented by a single processor C2, or may be implemented by a combination of two or more processors C2.
  • the substrate processing method includes a coating process, an exposure process, a development process, a rinsing process, and a drying process.
  • a coating process an I-line resist is applied to the surface of the workpiece W to form an I-line resist film.
  • an exposure process an exposure process of the I-line resist film is performed.
  • a developer L1 is supplied to the surface of the workpiece W after the exposure process.
  • a rinse liquid L2 is supplied to the surface of the workpiece W after the development process.
  • the rinse liquid L2 is dried by rotating the workpiece W after the rinsing process.
  • the rotating unit 21 operates based on a control signal from the control device 100, thereby rotating the shaft 22, and the workpiece W on the holder 23 provided at the tip of the shaft 22 rotates.
  • Figure 7 is a graph illustrating the cooling phenomenon of workpieces W processed consecutively.
  • the horizontal axis represents time, and the vertical axis represents the temperature of the surface Wa of the workpiece W.
  • the graph labeled Waf#1 shows the results of the first workpiece W processed
  • the graph labeled Waf#2 shows the results of the second workpiece W processed.
  • the graph labeled Waf#3 shows the results of the third workpiece W processed
  • the graph labeled Waf#4 shows the results of the fourth workpiece W processed.
  • the workpiece W is cooled by the heat of vaporization as it is rotated, and the temperature of the workpiece W processed later is particularly lower due to the cooling of the previously processed workpiece W (the cooling effect transmitted via the holding portion 23).
  • the range of such temperature decrease can be, for example, approximately 0.2°C to 1.0°C.
  • the I-line resist used in this embodiment has a higher temperature sensitivity than other light source resists, and the temperature drop described above makes it more likely that CD (Critical Dimension) variations (CD drift) will occur.
  • CD Cosmetic Dimension
  • Figure 8 is a graph illustrating the temperature drop of the wafer depending on the rotation speed.
  • the horizontal axis represents time and the vertical axis represents temperature.
  • Figure 8(a) shows the results when the rotation speed of the workpiece W is 2000 rpm and the rotation time is 15 seconds
  • Figure 8(b) shows the results when the rotation speed of the workpiece W is 6000 rpm and the rotation time is 15 seconds.
  • the drying process can be completed in a shorter time than when the rotation speed is set relatively low at 2000 rpm, thereby shortening the time affected by vaporization heat.
  • This makes it possible to suppress temperature drop caused by the effects of vaporization heat.
  • the temperature drop is approximately 0.5°C at the center of the workpiece W (0 mm in the diagram), and approximately 0.8°C at the outer periphery of the workpiece W (147 mm in the diagram), with the temperature drop being more effectively suppressed when the rotation speed is set to 6000 rpm.
  • Figure 9 is a graph showing the CD drift state according to the rotation speed.
  • Figure 9(a) shows the results when the rotation speed of the workpiece W is 2000 rpm
  • Figure 9(b) shows the results when the rotation speed of the workpiece W is 6000 rpm.
  • the horizontal axis shows the order of the workpieces W processed consecutively (1st, 4th, 7th)
  • the left vertical axis shows the average CD value
  • the right vertical axis shows the CD standard deviation multiplied by 3.
  • the bar graph shows the average value
  • the line graph shows the difference between the CD standard deviation multiplied by 3.
  • Figure 10 is a diagram explaining the state after drying for each rotation speed condition.
  • the condition marked “POR” was one in which the rotation speed was kept constant at 2000 rpm
  • the condition marked “TEST1” was one in which the rotation speed was kept constant at 4000 rpm.
  • the condition marked “TEST2” was one in which the rotation speed was initially set to 2000 rpm and then increased to 4000 rpm
  • the condition marked “TEST3” was one in which the rotation speed was initially set to 2400 rpm and then increased to 4000 rpm.
  • the liquid film thickness during processing is simply indicated by five levels: “0” (none), "1", “2", “3", and "4".
  • the substrate processing method divides the drying process into two stages: a first rotation process in which the substrate is rotated at a relatively low first rotation speed, and a second rotation process in which the substrate is rotated at a relatively high second rotation speed after the first rotation process.
  • the control device 100 is configured to control the coating and developing apparatus 2 to rotate the workpiece W at the first rotation speed, and to control the coating and developing apparatus 2 to rotate the workpiece W at a second rotation speed higher than the first rotation speed after the first rotation process.
  • FIG. 11A and 11B are diagrams illustrating the drying process in the substrate processing method according to this embodiment.
  • the drying process involves a first rotation process (FIG. 11B) in which the substrate is rotated at a relatively low first rotation speed, and a second rotation process (FIG. 11C) in which the substrate is rotated at a relatively high second rotation speed, completing the process (FIG. 11D).
  • the relatively low first rotation speed is between 200 rpm and 2500 rpm.
  • the second rotation speed is at least higher than the first rotation speed, for example, 4000 rpm or higher.
  • the rotation time in the first rotation step may be, for example, 10 seconds or less.
  • the second rotation speed may be higher than the rotation speed of the workpiece W in the developing and rinsing processes.
  • the rotation time in the second rotation step may be shorter than the rotation time in the first rotation step, for example, 7 seconds or less.
  • Figure 12 is a table showing the particle confirmation results for each combination of rotation speeds.
  • "TEST 4" shown in Figure 12(a) shows the particle (mist on the workpiece W) confirmation results when the first rotation speed was set to 2000 rpm and the second rotation speed to 4000 rpm, and the time for each rotation process was changed.
  • "TEST 5" shown in Figure 12(b) shows the particle (mist on the workpiece W) confirmation results when the first rotation speed was set to 2400 rpm and the second rotation speed to 4000 rpm, and the time for each rotation process was changed.
  • Figure 13 is a table showing the CD drift state for each combination of rotation speeds.
  • "POR” shown in Figure 13 is a condition where the rotation speed is constant at 2000 rpm and the rotation time is 15 seconds.
  • "TEST1” is a condition where the first rotation speed is 2400 rpm and the rotation time is 10 seconds, and the second rotation speed is 4000 rpm and the rotation time is 5 seconds.
  • "TEST2” is a condition where the first rotation speed is 2400 rpm and the rotation time is 9 seconds, and the second rotation speed is 3000 rpm and the rotation time is 6 seconds.
  • the CD improvement rate from “POR” for "TEST1” is approximately 35%
  • the CD improvement rate from “POR” for "TEST2” is approximately 5%.
  • Figures 14 to 18 are diagrams illustrating an example of the drying process. Each explains a variation of the drying process.
  • the first rotation step shown in FIG. 14(b) is carried out.
  • the first rotation speed and rotation time of the first rotation step may be set so that the amount of the rinsing liquid L2 film on the surface Wa of the workpiece W at the completion of the first rotation step is less than half of the amount immediately after the rinsing step (FIG. 14(a)).
  • the rinsing liquid L2 film may be thin on the outer periphery of the workpiece W and thicker at the center. As shown in FIG.
  • the second rotation speed and rotation time of the second rotation step may be set so that the rinsing liquid L2 is shaken off in a state in which the rinsing liquid film is thicker on the outer periphery of the workpiece W than at the center during the second rotation step.
  • the first rotation process shown in Figure 16(b) is carried out.
  • inert gas is sprayed from the gas nozzle 45 or gas nozzle 46 onto the center of the workpiece W, and then sprayed from the gas nozzle 45 or gas nozzle 46 while changing its position from the center to the outer periphery of the workpiece W.
  • inert gas continues to be sprayed onto the workpiece W from the first rotation process, and the spraying of inert gas is stopped upon completion of the second rotation process.
  • a replacement step is carried out, as shown in Figure 17(b), in which the rinsing liquid L2 (e.g., pure water) is replaced with a chemical liquid (e.g., IPA) that has a higher vapor pressure than pure water.
  • the rinsing liquid L2 e.g., pure water
  • a chemical liquid e.g., IPA
  • rinsing liquid L20 at a temperature of 35°C or higher and 60°C or lower is supplied to the surface Wa of the workpiece W. This allows for faster drying in the subsequent rotation process.
  • the control device 100 controls each part of the coating and developing apparatus 2 to process the workpiece W in the processing modules PM1 to PM3, thereby forming a resist film R on the surface Wa of the workpiece W (step S11).
  • the control device 100 controls each part of the coating and developing apparatus 2 to transport the workpiece W from processing module PM3 to the exposure device 3 using the transport arm A7 or the like.
  • a control device different from the control device 100 controls the exposure device 3 to expose the resist film R formed on the surface Wa of the workpiece W with a predetermined pattern (step S12).
  • control device 100 controls each part of the coating and developing apparatus 2 to transport the workpiece W from the exposure device 3 to the liquid processing unit U1 of the processing module PM4. As a result, the workpiece W is held by the substrate holding part 20 with its surface Wa facing upward.
  • the control device 100 controls the supply part 30 to supply developer L1 to the surface Wa of the workpiece W, i.e., the upper surface of the resist film R (step S13). Note that in the development process, developer may be supplied to the surface Wa of the workpiece W that has been cooled by a cool plate set to 25°C or higher after the exposure process.
  • the control device 100 controls the substrate holding part 20 and supply part 40 to supply rinse liquid L2 (rinse liquid) to the surface Wa of the rotating workpiece W, i.e., the upper surface of developer L1 (step S14).
  • control device 100 controls each part of the coating and developing apparatus 2 to perform a first rotation process in which the workpiece W is rotated at a first rotation speed of 2000 rpm or more and 2500 rpm or less (step S15). Furthermore, the control device 100 controls each part of the coating and developing apparatus 2 to perform a second rotation process in which the workpiece W is rotated at a second rotation speed higher than the first rotation speed after the first rotation process.
  • the substrate processing method includes a coating process in which an I-line resist is applied to the surface Wa of the workpiece W to form an I-line resist film; an exposure process in which the I-line resist film is exposed to light; and a development process in which a developer is supplied to the surface Wa of the workpiece W after the exposure process.
  • the substrate processing method also includes a rinsing process in which a rinse liquid L2 is supplied to the surface Wa of the workpiece W after the development process; and a drying process in which the rinse liquid L2 is dried by rotating the workpiece W after the rinsing process.
  • the drying process includes a first rotation process in which the workpiece W is rotated at a first rotation speed of 2000 rpm or more and 2500 rpm or less, and a second rotation process in which the workpiece W is rotated at a second rotation speed higher than the first rotation speed after the first rotation process.
  • the workpiece W in the drying step following the rinsing step, is rotated at a first rotation speed of 2000 rpm or more and 2500 rpm or less, and then rotated at a second rotation speed higher than the first rotation speed.
  • the period during which the rinse liquid L2 remains on the surface Wa of the workpiece W i.e., the time during which the workpiece W is cooled due to the influence of the heat of vaporization, can be shortened.
  • a decrease in the temperature of the surface Wa is likely to cause variations in CD (Critical Dimension) (CD drift).
  • the drying process is divided into two stages: a first rotation process in which the workpiece W is rotated at a relatively low first rotation speed, and a second rotation process in which the workpiece W is rotated at a relatively high second rotation speed after the first rotation process.
  • this first rotation process with a relatively low rotation speed, the liquid film of rinse liquid L2, which is initially thick, can be discharged as much as possible outside the workpiece W to thin the liquid film without generating mist.
  • the second rotation process after the liquid film has thinned and mist is less likely to be generated, the aforementioned CD drift suppression effect can be achieved without generating mist.
  • the substrate processing method according to this embodiment by dividing the drying process into two stages with different rotation speeds of the workpiece W, it is possible to suppress the generation of mist while also suppressing CD drift caused by high-speed rotation. This makes it possible to suppress the occurrence of defects in the workpiece W exposed to I-rays.
  • the second rotation speed may be 4000 rpm or higher.
  • the rotation time in the second rotation process may be shorter than the rotation time in the first rotation process.
  • High-speed rotation allows the workpiece W to be dried efficiently, thereby shortening the rotation time and appropriately shortening the time it takes for the workpiece W to cool down due to the heat of vaporization.
  • the rotation time in the first rotation process may be 10 seconds or less. In this way, by setting the rotation time to a necessary and sufficient time (necessary and sufficient to thin the liquid film to the extent that mist is not generated in the subsequent stage), the time it takes for the workpiece W to cool due to the influence of the latent heat of vaporization can be appropriately shortened.
  • the rotation time in the second rotation process may be 7 seconds or less.
  • the first rotation speed and rotation time in the first rotation step may be set so that, at the completion of the first rotation step, the liquid film of rinse liquid L2 on the surface Wa of the workpiece W is less than half the amount immediately after the completion of the rinse step. This allows the liquid film to be sufficiently thinned in the first rotation step, and the generation of mist in the subsequent second rotation step can be suppressed.
  • the second rotation speed and rotation time in the second rotation step may be set so that, in the second rotation step, the rinse liquid L2 is shaken off in a state where the liquid film is thicker on the periphery of the workpiece W than in the center. This allows the rinse liquid L2 to be shaken off efficiently and quickly.
  • the second rotation speed may be higher than the rotation speed of the workpiece W in the development process and the rotation speed of the workpiece W in the rinsing process. In this way, by making the second rotation speed higher than the normal rotation speed (the rotation speed of other processes), the workpiece W can be dried efficiently and the time it takes for the workpiece W to cool down due to the heat of vaporization can be appropriately shortened.
  • the inert gas may be sprayed onto the center of the workpiece W, and then sprayed from the center to the periphery of the workpiece W while changing the position.
  • the inert gas may continue to be sprayed onto the workpiece W from the first rotation process, and the spraying of the inert gas may be stopped upon completion of the first rotation process.
  • inert gas may be ejected so that the liquid film of the rinsing liquid L2 moves toward the outer periphery of the workpiece W and becomes more uniform on the surface Wa of the workpiece W, and the ejection of the inert gas may be stopped before the start of the second rotation step.
  • the liquid film is made uniform by the ejection of inert gas, which makes it possible to uniformize the effect of the heat of vaporization on the surface Wa of the workpiece W and suppress CD drift.
  • the drying completion time (rotation time) in the second rotation step can be shortened, and the time it takes for the workpiece W to cool due to the effect of the heat of vaporization can be shortened.
  • by stopping the ejection of inert gas before the second rotation step in which the rinsing liquid L2 is shaken off the effect of the heat of vaporization caused by the ejection of inert gas can be avoided.
  • the above substrate processing method may further include a substitution process, after the rinsing process and before the first rotation process, in which the rinsing liquid L2 is replaced with a chemical liquid having a higher vapor pressure than pure water.
  • a substitution process after the rinsing process and before the first rotation process, in which the rinsing liquid L2 is replaced with a chemical liquid having a higher vapor pressure than pure water.
  • a high-temperature rinsing liquid L20 of 35°C or higher and 60°C or lower may be supplied to the surface of the workpiece W. This allows the drying process to be carried out in an environment where drying is more likely to occur, and the time required to dry the workpiece W (the time it takes for the workpiece W to cool due to the heat of vaporization) can be shortened.
  • the developer may be supplied to the surface of the workpiece W, which has been cooled by a cool plate set to 25°C or higher after the exposure process. This allows the drying process to be carried out in an environment where drying is more likely to occur, and the time required to dry the workpiece W (the time it takes for the workpiece W to cool due to the heat of vaporization) can be shortened.
  • 1...substrate processing system (substrate processing apparatus), 2...coating and developing apparatus (liquid processing apparatus), 100...control apparatus.

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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

L'invention concerne un procédé de traitement de substrat par lequel la génération de défauts dans un substrat exposé à des rayons i peut être supprimée et la dérive dimensionnelle du produit de réserve entre des substrats traités en continu peut être supprimée.　Ce procédé de traitement d'un substrat qui a été soumis à un traitement d'exposition après qu'un produit de réserve de rayons i a été appliqué au substrat comprend : une étape de développement (S13) pour fournir un liquide de développement à la surface du substrat ; une étape de rinçage (S14) pour fournir un liquide de rinçage à la surface du substrat après l'étape de développement ; et une étape de séchage (S15, S16) pour sécher le liquide de rinçage par rotation du substrat après l'étape de rinçage. L'étape de séchage comprend une première étape de rotation (S15) pour faire tourner le substrat à une première vitesse de rotation de 2‗000 à 2‗500 tr/min, et une seconde étape de rotation (S16) pour faire tourner le substrat à une seconde vitesse de rotation, qui est supérieure à la première vitesse de rotation, après la première étape de rotation.
PCT/JP2025/011785 2024-04-08 2025-03-25 Procédé de traitement de substrat, support de stockage et dispositif de traitement de substrat Pending WO2025216049A1 (fr)

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1116824A (ja) * 1997-06-27 1999-01-22 Nippon Telegr & Teleph Corp <Ntt> 現像装置及び現像方法
JP2004014844A (ja) * 2002-06-07 2004-01-15 Tokyo Electron Ltd 基板処理装置及び基板処理方法
JP2005347326A (ja) * 2004-05-31 2005-12-15 Tokyo Electron Ltd 基板処理方法及び基板処理装置
JP2015023182A (ja) * 2013-07-19 2015-02-02 東京エレクトロン株式会社 液処理方法、液処理装置および記憶媒体
JP2015115584A (ja) * 2013-12-16 2015-06-22 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP2015133347A (ja) * 2014-01-09 2015-07-23 東京エレクトロン株式会社 基板洗浄方法、基板洗浄装置、及びコンピュータ読み取り可能な記録媒体
JP2015213105A (ja) * 2014-05-01 2015-11-26 東京エレクトロン株式会社 基板処理装置及び基板処理方法並びに基板処理プログラムを記録したコンピュータ読み取り可能な記録媒体
JP2019207948A (ja) * 2018-05-29 2019-12-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1116824A (ja) * 1997-06-27 1999-01-22 Nippon Telegr & Teleph Corp <Ntt> 現像装置及び現像方法
JP2004014844A (ja) * 2002-06-07 2004-01-15 Tokyo Electron Ltd 基板処理装置及び基板処理方法
JP2005347326A (ja) * 2004-05-31 2005-12-15 Tokyo Electron Ltd 基板処理方法及び基板処理装置
JP2015023182A (ja) * 2013-07-19 2015-02-02 東京エレクトロン株式会社 液処理方法、液処理装置および記憶媒体
JP2015115584A (ja) * 2013-12-16 2015-06-22 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP2015133347A (ja) * 2014-01-09 2015-07-23 東京エレクトロン株式会社 基板洗浄方法、基板洗浄装置、及びコンピュータ読み取り可能な記録媒体
JP2015213105A (ja) * 2014-05-01 2015-11-26 東京エレクトロン株式会社 基板処理装置及び基板処理方法並びに基板処理プログラムを記録したコンピュータ読み取り可能な記録媒体
JP2019207948A (ja) * 2018-05-29 2019-12-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

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