[go: up one dir, main page]

WO2025214842A1 - Procédé d'application d'une structure sur un substrat - Google Patents

Procédé d'application d'une structure sur un substrat

Info

Publication number
WO2025214842A1
WO2025214842A1 PCT/EP2025/058965 EP2025058965W WO2025214842A1 WO 2025214842 A1 WO2025214842 A1 WO 2025214842A1 EP 2025058965 W EP2025058965 W EP 2025058965W WO 2025214842 A1 WO2025214842 A1 WO 2025214842A1
Authority
WO
WIPO (PCT)
Prior art keywords
contour line
substrate
deposited
deposition technique
printing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/EP2025/058965
Other languages
English (en)
Inventor
Dennis KUPPENS
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suss Microtec Solutions & Co Kg GmbH
Original Assignee
Suss Microtec Solutions & Co Kg GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL2037856A external-priority patent/NL2037856A/en
Application filed by Suss Microtec Solutions & Co Kg GmbH filed Critical Suss Microtec Solutions & Co Kg GmbH
Publication of WO2025214842A1 publication Critical patent/WO2025214842A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations

Definitions

  • the present invention relates a method for applying a structure onto a substrate. Furthermore, the invention relates to a substrate with a deposited structure.
  • the feature size of these structures typically ranges from a few micrometers to several millimeters or even centimeters.
  • inkjet printing is of great interest, because the drop-on-demand technology allows to selectively deposit material at desired positions and the printing layout can be changed easily.
  • wetting defects such as pinholes or wet film rupturing may occur.
  • the ink might excessively spread, thereby distorting the printing pattern.
  • the object of the invention is solved by a method for applying a structure on a substrate, comprising the steps of:
  • the substrate is a semiconductor or silicon wafer.
  • the substrate provided at the beginning of the method is unprocessed. This means that the substrate has substantially no protrusions or depressions and is thus substantially flat at the beginning of the method.
  • the substrate provided at the beginning of the method is processed, which means that the substrate has protrusions or depressions and is thus pre-structured at the beginning of the method.
  • the main idea of the invention is to combine two complementary deposition technologies. By first depositing the contour line of the structure with a first highly precise deposition technique, a barrier is formed. This barrier confines the spreading area of the second material which is subsequently applied using a second deposition technique. Furthermore, the confinement allows depositing second material with increased wet film thickness which is beneficial to avoid pinhole formation or layer rupturing. The resulting structures have an improved edge definition and/or lower edge roughness compared to commonly printed layers without barrier.
  • the first deposition technique comprises a lithographic, particularly photolithographic step and/or is a nano or micro printing, stamping, imprinting and/or dispensing technique, in particular a microchannel particle deposition or a single-nozzle or multi-nozzle printing and/or dispensing technique, for example electro-static, capillary or aerosol jet printing or dispensing.
  • a lithographic, particularly photolithographic step and/or is a nano or micro printing, stamping, imprinting and/or dispensing technique, in particular a microchannel particle deposition or a single-nozzle or multi-nozzle printing and/or dispensing technique, for example electro-static, capillary or aerosol jet printing or dispensing.
  • the first deposition technique can be a nano or micro stamping technique, in particular a microchannel particle deposition technique, comprising the following steps:
  • the first material is ink. Accordingly, it is possible to use the first material for inkjet printing.
  • the first material is any material that can be used in lithographic, particularly photolithographic processes or in nano or micro printing, stamping, imprinting and/or dispensing processes. Therefore, a variety of materials can be used in the first deposition technique.
  • the second deposition technique can comprise a spray coating, particularly a masked spray coating process and/or is for example a multi-nozzle printing and/or dispensing technique such as inkjet printing.
  • Spray coating and/or inkjet printing allows creating a thick and homogeneous infill layer. It is much faster than lithography and/or the nano or micro printing, stamping, imprinting and/or dispensing technique that is preferably applied for depositing the contour line.
  • the spray coating process comprises the steps of:
  • the spray coating process can be extended to a masked spray coating process comprising the steps of:
  • the second material is a coating material. Accordingly, it is possible to use the second material for spray coating.
  • the second material is ink. Accordingly, it is possible to use the second material for inkjet printing.
  • the second material is any material that can be used in spray coating and/or inkjet printing processes. Therefore, a variety of materials can be used in the second deposition technique.
  • the material deposited using the second deposition technique has a viscosity of 2-20 mPas.
  • the relatively low viscosity enhances spreading of the second material and thus filling of the area defined by the contour line.
  • the viscosity of the first material deposited using the first deposition technique to form the contour line can be significantly higher, in particular more than 20 mPas.
  • the high viscosity is beneficial to reduce spreading of the first material on the substrate and thus to achieve a contour line with precise geometry. This is of course not limiting to the invention. It is also possible to apply the same first material and/or second material with the first and second deposition technique.
  • the first deposition technique is a contactless deposition technique. Additionally or alternatively, also the second deposition technique is contactless. By avoiding any contact between the substrate and the deposition means, mechanical stress can be avoided during the second material deposition, which is in particular beneficial when using sensitive substrates, for example wafers such as semiconductor or silicon wafers or the like.
  • the contour line is deposited such that it forms a liquid barrier which prevents the second material from spreading out of the area surrounded by the contour line.
  • the liquid barrier can be a mechanical barrier for the second material.
  • the height of the liquid barrier prevents second material from overflowing it.
  • the liquid barrier can be a surface energy barrier for the second material.
  • the second material does not wet the liquid barrier surface.
  • the low surface energy of the liquid barrier thus prevents the second material from wetting and/or overrunning it.
  • it is also conceivable to manufacture the contour line such that it has a higher surface energy than the substrate surface. In this case, the second material wets the contour line and spreads along it. This can result in an improved second material distribution at the edge of the printed pattern and thus in a decreased edge roughness and/or better edge definition of the deposited wet film.
  • the surface energy of the contour line and substrate can be tailored, for example by the choice of material and/or suitable surface treatment techniques, such as plasma or corona treatment.
  • the method comprises the additional step of drying the deposited first material forming the contour line, in particular prior to depositing the second material, and/or drying the deposited second material.
  • the drying step can be a separate processing step.
  • the first material and/or second material can be dried during application, for example by heating the substrate. In this way, higher throughput rates can be achieved.
  • the contour line has a maximum height or average height of at least 100 nm, preferably at least 1 pm, in particular in a dried state. It has been found out that these heights are sufficient to achieve the aforementioned barrier effects.
  • a height ratio between a maximum height or an average height of the second material and a maximum height or an average height of the contour line can be at least 1 : 100, at least 1 : 10, at least 1 : 1 , at least 10: 1 , at least 50: 1 , at least 100: 1 , at least 1.000: 1 or at least 10.000: 1 .
  • the first material can be a silver material, in particular nanoparticle silver ink, or a photoresist material. These materials are well tested in many state of the art applications and are comparatively easy to process. Of course, also other materials are possible.
  • the object of the invention is also solved by a substrate with a deposited structure, comprising at least a first dam section and a second dam section, wherein the dam sections define at least part of a contour line of the deposited structure.
  • the deposited structure furthermore comprises a layer of second material deposited within the contour line and covering an area extending between the first and second dam section.
  • Fig. 1 shows an ideal circular structure
  • Fig. 2 shows an ideal rectangular structure
  • Fig. 3 schematically shows a circular structure resulting from a conventional printing process
  • Fig. 4 schematically shows a rectangular structure resulting from a conventional printing process
  • Fig. 5 schematically shows a section of a substrate with a deposited structure according to the invention in a top view
  • Fig. 6 schematically shows a cross section of the substrate and deposited structure of Fig. 5;
  • Fig. 7 schematically shows a cross section of a substrate with a deposited contour line
  • Fig. 8 schematically shows the cross section of Fig. 7 with ink deposited onto an area surrounded by the contour line, wherein the contour line acts as mechanical liquid barrier;
  • Fig. 9 schematically shows the cross section of Fig. 7 with ink deposited onto an area surrounded by the contour line, wherein the contour line acts as surface energy liquid barrier;
  • Fig. 10 schematically shows the cross section of Fig. 7 with ink deposited onto an area surrounded by the contour line, wherein the contour line acts as a wetting guide along which the ink can spread.
  • Fig. 1 shows an ideal circular structure 10 and Fig. 2 an ideal rectangular structure 12.
  • the structures 10, 12, serve as examples of printing patterns that are intended for reproduction on a substrate surface by a wet film deposition technique.
  • Fig. 3 schematically shows a circular structure 14 resulting from a conventional inkjet printing process with the printing pattern being the ideal circular structure 10 of Fig. 1.
  • Fig. 4 schematically shows a rectangular structure 16 resulting from a conventional inkjet printing process with the printing pattern being the ideal rectangular structure 12 of Fig. 2.
  • the deposited circular structure 14 of Fig. 3 has a poor edge definition which is a direct result of the applied printing technique, in particular of the individual droplets being placed at different positions on the substrate by the inkjet.
  • Fig. 3 suffers from wetting defects 18 such as pinholes and layer rupturing.
  • Fig. 4 The deposited rectangular structure of Fig. 4 has similar problems. It also suffers from a poor edge definition. In addition, ink spills 20 which are the result of excessive wetting affect the printed pattern.
  • Figs. 5 and 6 schematically show a top view as well as a cross section of a substrate 22 with a deposited structure 24 according to the invention.
  • the deposited structure 24 comprises a first dam section 26 and a second dam section 28.
  • Each dam section 26, 28 defines part of a contour line 30 of the deposited structure 24.
  • the dam sections 26, 28 form a closed contour line 30.
  • the dam sections 26, 28 are connected to each other such that they form a single line with no beginning and ending, similar to the contours depicted in Fig.1 and Fig. 2.
  • the dam sections 26, 28 form an open contour line 30.
  • the first and/or second dam section 26, 28 or connection between the dam sections 26, 28 is interrupted.
  • the deposited structure 24 furthermore comprises a layer 32 of second material applied within the contour line 30 and covering an area 34 extending between the first dam section 26 and second dam section 28.
  • the layer is for example 3 pm thick.
  • the substrate 22 with the deposited structure 24 shown in Figs. 5 and 6 can be manufactured, with a method according to the invention. In the following, this method will briefly be explained.
  • a substrate 22 is provided, for example a semiconductor wafer, in particular a silicon wafer.
  • a first material is deposited onto the substrate 22 such that the first material forms a contour line 30 of the structure 24 to be applied using a first deposition technique.
  • the contour line 30 forms the first and second dam section 26, 28, as shown in Fig. 7.
  • the deposited first material is a photoresist material, in particular Sll-8 photo resist from Microchem Corp.
  • the first deposition technique with which the first material is applied is a nano or micro printing technique, in particular capillary printing. This technique allows printing highly precise line structures by guiding a single nozzle over the substrate 22 while ejecting the first material.
  • the first material is dried and/or cured/hardened in a third processing step.
  • the deposited contour line 30 has a maximum height or an average height of -1 pm and a maximum width or average width of ⁇ 35 pm in a dried state (the figures are not drawn to scale).
  • thinner contour lines 30 can be applied, for example with a maximum width or average width of only a few pm and maximum height or average height of only 100-200 nm.
  • second material in form of ink 36 is deposited onto an area 34 of the substrate surrounded by the contour line 30.
  • the ink 36 is deposited using a second, contactless deposition technique, in particular multi-nozzle inkjet printing with a piezoelectric printing head.
  • the ink 36 has a viscosity of 2-20 mPas, which is well suited for inkjet printing. Furthermore, due to the low viscosity, the ink 36 can easily spread and cover the area 34 surrounded by the deposited contour line 30, thereby forming the structure 24.
  • a height ratio between a maximum height or an average height of the ink 36 and a maximum height or an average height of the contour line 30 is -50:1 (the figures are not drawn to scale).
  • Fig. 8 schematically shows the substrate 22 with the contour line 30 of Fig. 7 after deposition of the ink 36.
  • the contour line 30 forms a liquid barrier 38 that mechanically prevents the ink 36 from spreading out of the area 34 surrounded by the contour line 30.
  • the invention is however not limited to gravity based ink confinement.
  • Fig. 9 schematically shows an alternative and/or additional strategy to ensure that the ink 36 stays at the intended position on the substrate 22, in particular within the deposited contour line 30.
  • the contour line 30 acts as a surface energy liquid barrier 38. This can be achieved by applying first materials with surface energies significantly lower than the substrate surface energy. In this case, it is energetically unfavorable for the ink 36 to cover the contour line 30 which thus acts as a liquid barrier 38.
  • the edge definition of the deposited structure is improved compared to conventionally printed patterns, because the highly precise first deposition technique defines the edge structure.
  • Fig. 10 schematically shows a further alternative strategy to deposit structures 24 with improved edge definition.
  • the contour line 30 is deposited from a first material that has a significantly higher surface energy than the substrate surface.
  • the ink 36 therefore wets the contour line 30 and spreads along it homogeneously, thereby reducing or avoiding rough edge structures.
  • the ink 36 is dried, thus forming the layer 32.
  • the invention is not limited to the first deposition technique being a nano or micro printing technique, in particular a capillary printing technique.
  • the first deposition technique can comprise a lithographic, particularly photolithographic step and/or can be a nano or micro stamping, imprinting and/or dispensing technique.
  • the invention is not limited to the second deposition technique being an inkjet printing technique and/or the second material being ink (36).
  • the second deposition technique can comprise a spray coating, particularly a masked spray coating process, and/or the second material can be a coating material.
  • the method according to the invention combines the advantages of the different applied material deposition techniques, which results in an improved quality of the deposited structures 24.
  • the edge roughness can be reduced from +/-10 pm to only +/-1 pm.
  • the maximum layer thickness can be improved compared to conventional single nozzle capillary printing from -1 pm to -10 pm.
  • the processing time can be significantly reduced compared to conventional single nozzle capillary printing, for example from -1500 s to -10 s for depositing a 1x1 mm 2 square structure filled with a 1 pm thick layer.

Landscapes

  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

L'invention concerne un procédé d'application d'une structure (24) sur un substrat (22), comprenant les étapes de : - la fourniture du substrat (22) ; - le dépôt d'un premier matériau sur le substrat (22) de telle sorte que le premier matériau forme une ligne de contour (30) de la structure (24) à appliquer à l'aide d'une première technique de dépôt ; - le dépôt d'un deuxième matériau sur une zone (34) du substrat (22) entourée par la ligne de contour (30) de telle sorte que le deuxième matériau recouvre la zone (34), formant ainsi la structure (24), à l'aide d'une deuxième technique de dépôt. En outre, l'invention concerne un substrat (22) avec une structure déposée (24).
PCT/EP2025/058965 2024-04-12 2025-04-02 Procédé d'application d'une structure sur un substrat Pending WO2025214842A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
NL2037447 2024-04-12
NL2037447 2024-04-12
NL2037856A NL2037856A (en) 2024-04-12 2024-06-04 A method for applying a structure onto a substrate
NL2037856 2024-06-04

Publications (1)

Publication Number Publication Date
WO2025214842A1 true WO2025214842A1 (fr) 2025-10-16

Family

ID=95201172

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2025/058965 Pending WO2025214842A1 (fr) 2024-04-12 2025-04-02 Procédé d'application d'une structure sur un substrat

Country Status (1)

Country Link
WO (1) WO2025214842A1 (fr)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080008822A1 (en) * 2001-10-05 2008-01-10 Cabot Corporation Controlling ink migration during the formation of printable electronic features
US20100034986A1 (en) * 2001-10-05 2010-02-11 Cabot Corporation Low viscosity precursor compositions and methods for the deposition of conductive electronic features

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080008822A1 (en) * 2001-10-05 2008-01-10 Cabot Corporation Controlling ink migration during the formation of printable electronic features
US20100034986A1 (en) * 2001-10-05 2010-02-11 Cabot Corporation Low viscosity precursor compositions and methods for the deposition of conductive electronic features

Similar Documents

Publication Publication Date Title
US7811505B2 (en) Method for fast filling of templates for imprint lithography using on template dispense
KR100561864B1 (ko) 잉크젯 프린트헤드의 노즐 플레이트 표면에 소수성코팅막을 형성하는 방법
US7365022B2 (en) Additive printed mask process and structures produced thereby
JP5766388B2 (ja) インクジェット印刷ヘッド用のオリフィスプレートおよびオリフィスプレートの製造方法
KR20060063894A (ko) 패턴 코팅 방법
TWI710858B (zh) 用於控制壓印材料的擴散之方法、製造裝置的方法、和基板
JP4796964B2 (ja) インクジェット技術を利用した細線形成方法
EP2062849B1 (fr) Procédé pour obtenir un profil de paroi latérale contrôlé dans des structures à motif d'impression
TW201343354A (zh) 用於控制表面張力以減少所捕捉氣泡之方法
US8413576B2 (en) Method of fabricating a structure
JP2010137460A (ja) インクジェット記録ヘッドの製造方法
WO2025214842A1 (fr) Procédé d'application d'une structure sur un substrat
US9701119B2 (en) Fluid ejection chip including hydrophilic and hydrophopic surfaces and methods of forming the same
NL2037856A (en) A method for applying a structure onto a substrate
GB2410466A (en) A method of making an inkjet printhead
JP2011054386A (ja) 有機ｅｌディスプレイの製造方法
KR101058844B1 (ko) 레이저를 이용한 회로 제조방법
KR20030053466A (ko) 기판 위에 트랙을 제조하는 방법
KR101716851B1 (ko) 용액재료를 이용한 미세패턴 제조방법
JPH07335532A (ja) 樹脂の回転塗布方法
JP4480517B2 (ja) 薄膜パターン形成用基板、薄膜パターン形成基板の製造方法及び薄膜パターン形成基板
KR101391807B1 (ko) 잉크젯 프린팅과 나노 임프린팅을 이용한 패턴 형성 방법
US20170087747A1 (en) Manufacture method of liquid ejection head
TWI437383B (zh) 用於製造空白遮罩之光阻去除裝置、空白遮罩及其製造方法
JP6757241B2 (ja) パターン形成方法及びレプリカモールドの製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 25715301

Country of ref document: EP

Kind code of ref document: A1