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WO2025211722A1 - Appareil de dépôt chimique en phase vapeur - Google Patents

Appareil de dépôt chimique en phase vapeur

Info

Publication number
WO2025211722A1
WO2025211722A1 PCT/KR2025/004282 KR2025004282W WO2025211722A1 WO 2025211722 A1 WO2025211722 A1 WO 2025211722A1 KR 2025004282 W KR2025004282 W KR 2025004282W WO 2025211722 A1 WO2025211722 A1 WO 2025211722A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas
exhaust pipe
vapor deposition
chemical vapor
gas exhaust
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/KR2025/004282
Other languages
English (en)
Korean (ko)
Inventor
황금찬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TES Co Ltd
Original Assignee
TES Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TES Co Ltd filed Critical TES Co Ltd
Publication of WO2025211722A1 publication Critical patent/WO2025211722A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles

Definitions

  • the present invention relates to a chemical vapor deposition apparatus, and more specifically, to a chemical vapor deposition apparatus capable of preventing foreign substances such as powder from being attached to the inside of an exhaust pipe due to exhaust gas exhausted from a processing space for a substrate.
  • a chemical vapor deposition device provides a processing space for a substrate inside a chamber, and performs various processes on the substrate in the processing space.
  • the process gas is heated before entering the treatment space to maintain a temperature higher than the process temperature in the treatment space, and is exhausted from the treatment space through a gas pipe.
  • the temperature of the process gas exhausted through the gas exhaust pipe can be maintained in a state where it does not drop significantly from the process temperature, or in a temperature range similar to the process temperature.
  • the present invention aims to provide a chemical vapor deposition apparatus having a cooling gas supply unit capable of supplying cooling gas to a gas exhaust pipe through which gas is exhausted in a processing space for a substrate.
  • a chemical vapor deposition apparatus characterized by comprising a chamber providing a processing space for a substrate, a gas exhaust pipe connected to the processing space and through which gas in the processing space is exhausted to the outside of the chamber, and a cooling gas supply unit connected to the gas exhaust pipe and supplying cooling gas to the gas exhaust pipe.
  • a lower plate provided inside the chamber and on which the substrate is mounted, and an upper cover provided on the upper portion of the lower plate and providing a processing space for the substrate between the lower plate and the chamber may be further provided.
  • the cooling gas supply unit may be provided with a cooling gas supply path that is connected to the gas exhaust pipe and supplies the cooling gas to the inside of the gas exhaust pipe.
  • the cooling gas supply path can be connected to the gas exhaust pipe adjacent to the processing space.
  • the cooling gas supply unit can lower the temperature of the gas exhaust pipe below the reaction temperature of the process gas.
  • the cooling gas supply unit can supply hydrogen as a cooling gas.
  • the present invention having the above-described configuration, by supplying cooling gas to a gas exhaust pipe through which gas is exhausted in a processing space for a substrate, the internal temperature of the gas exhaust pipe is lowered to below the reaction temperature of the process gas, thereby preventing foreign substances such as powder from being attached inside the gas exhaust pipe.
  • FIG. 1 is a side cross-sectional view showing the internal configuration of a chemical vapor deposition apparatus according to one embodiment of the present invention
  • Figure 2 is a plan view of the lower plate and the gas exhaust pipe, and is a drawing showing the cooling gas supply hole formed in the gas exhaust pipe.
  • Figure 3 is a graph showing the temperature change inside the processing space and gas exhaust pipe in a chemical vapor deposition device according to the prior art.
  • Figure 4 is a graph showing temperature changes inside a processing space and a gas exhaust pipe in a chemical vapor deposition apparatus according to the present invention.
  • FIG. 1 is a cross-sectional side view illustrating the internal configuration of a chemical vapor deposition apparatus (1000) according to one embodiment of the present invention.
  • the chemical vapor deposition device (1000) may be equipped with a chamber (100). Various components may be provided in the chamber (100).
  • a receiving space (110) in which various components are provided may be provided inside the chamber (100).
  • a gas supply unit (200) may be connected to one side of the chamber (100).
  • the gas supply unit (200) may serve to supply various process gases and purge gases toward the processing space (312).
  • the above gas supply unit (200) may be provided with a gas inlet pipe (220) that extends from the outside of the chamber (100) to the inside of the chamber (100) and is connected to the processing space (312).
  • a supply port (210) through which gas is supplied may be formed in the gas inlet pipe (220) located outside the chamber (100).
  • an inner chamber (300) may be provided inside the chamber (100), and a processing space (312) for the substrate (W) may be provided inside the inner chamber (300).
  • the inner chamber (300) may function as a heat-blocking member. That is, the inner chamber (300) is arranged to surround the susceptor assembly (330) described below, and may be composed of carbon felt, graphite felt, or the like. Alternatively, the inner chamber (300) may be composed of graphite-coated carbon felt or carbon-coated graphite felt, or the like.
  • the heat from the heater (340) of the susceptor assembly (330) is not radiated to the outside of the inner chamber (300), so that the processing space (312) can be heated more effectively.
  • the susceptor assembly (330) may be provided with a lower plate (320).
  • the lower plate (320) may be provided with a body portion (322) in which a concave portion (326) is formed into which the substrate (W) is inserted or into which the susceptor (328) on which the substrate (W) is mounted is inserted, and a protrusion (324) protruding downward from the body portion (322).
  • the susceptor assembly (330) may be provided with a heater (340) that heats the lower plate (320).
  • a processing space (312) for processing the substrate (W) is formed between the lower plate (320) and the upper cover (310).
  • the chemical vapor deposition apparatus (1000) may correspond to, for example, an apparatus for depositing a silicon carbide (SiC) film on the surface of the substrate (W), but is not limited thereto and may also be used as an apparatus for depositing a silicon-based thin film.
  • the chemical vapor deposition apparatus (1000) supplies a process gas or the like from the side of the processing space (312) by the gas supply unit (200) to induce a laminar flow of gas within the processing space (312) to grow a necessary film on the upper surface of the substrate (W).
  • the inner chamber (300) may be equipped with a heater (340) for heating the substrate (W) and the processing space (312) to a process temperature.
  • the heater (340) may be equipped at the lower portion of the lower plate (320) and may be configured as an induction heating coil. Since the induction heating coil can be used semi-permanently after installation, it has advantages in terms of maintenance and equipment operation costs.
  • a concave portion (326) is formed on the upper surface of the body portion (322), and a susceptor (328) on which the substrate (W) or the substrate (W) is mounted may be provided in the concave portion (326).
  • the substrate (W) can be rotated so that the process gas supplied from the side reacts uniformly on the entire surface of the substrate (W).
  • the vertical axis represents temperature, and the vertical axis represents distance according to the flow of process gas, etc.
  • 'A1' corresponds to the front end of the concave portion (326) where the substrate (W) or susceptor (328) is seated
  • 'A2' corresponds to the rear end of the concave portion (326). Therefore, in Fig. 3, the area between 'A1' and 'A2' corresponds to the concave portion (326), and illustrates the processing space (312) where the substrate (W) is located.
  • 'A3' corresponds to the front end of the gas exhaust pipe (400), and the area after 'A3' corresponds to the gas exhaust pipe (400).
  • the process gas, etc. is exhausted through the gas exhaust pipe (400).
  • the temperature of the process gas exhausted through the gas exhaust pipe (400) can be maintained in a state that does not drop significantly from the process temperature described above, or in a temperature range similar to the process temperature, even within the interior (area A) of the gas exhaust pipe (400).

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention concerne un appareil de dépôt chimique en phase vapeur et, plus spécifiquement, un appareil de dépôt chimique en phase vapeur capable d'empêcher la fixation de substances étrangères telles que de la poudre à l'intérieur d'un tuyau d'évacuation en raison du gaz d'évacuation évacué d'un espace de traitement de substrat.
PCT/KR2025/004282 2024-04-04 2025-04-01 Appareil de dépôt chimique en phase vapeur Pending WO2025211722A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2024-0046297 2024-04-04
KR1020240046297A KR20250147592A (ko) 2024-04-04 2024-04-04 화학기상증착장치

Publications (1)

Publication Number Publication Date
WO2025211722A1 true WO2025211722A1 (fr) 2025-10-09

Family

ID=97267342

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2025/004282 Pending WO2025211722A1 (fr) 2024-04-04 2025-04-01 Appareil de dépôt chimique en phase vapeur

Country Status (2)

Country Link
KR (1) KR20250147592A (fr)
WO (1) WO2025211722A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0669135A (ja) * 1992-08-21 1994-03-11 Komatsu Denshi Kinzoku Kk 気相成長装置
JP2003277934A (ja) * 2002-03-26 2003-10-02 Mitsubishi Heavy Ind Ltd 金属膜作製装置
KR100663373B1 (ko) * 2005-10-14 2007-01-02 삼성전자주식회사 냉각유닛을 갖는 반도체 확산 설비
KR20220091744A (ko) * 2020-12-24 2022-07-01 삼성전자주식회사 파우더 부산물 억제를 위해 흡착제를 포함하는 배기 가스 처리 시스템
CN116411265A (zh) * 2021-12-31 2023-07-11 中微半导体设备(上海)股份有限公司 一种化学气相沉积装置及其方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0669135A (ja) * 1992-08-21 1994-03-11 Komatsu Denshi Kinzoku Kk 気相成長装置
JP2003277934A (ja) * 2002-03-26 2003-10-02 Mitsubishi Heavy Ind Ltd 金属膜作製装置
KR100663373B1 (ko) * 2005-10-14 2007-01-02 삼성전자주식회사 냉각유닛을 갖는 반도체 확산 설비
KR20220091744A (ko) * 2020-12-24 2022-07-01 삼성전자주식회사 파우더 부산물 억제를 위해 흡착제를 포함하는 배기 가스 처리 시스템
CN116411265A (zh) * 2021-12-31 2023-07-11 中微半导体设备(上海)股份有限公司 一种化学气相沉积装置及其方法

Also Published As

Publication number Publication date
KR20250147592A (ko) 2025-10-13

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