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WO2025211696A1 - Composition de film adhésif et film adhésif de protection de surface de tranche de semi-conducteur fabriqué à l'aide de celle-ci - Google Patents

Composition de film adhésif et film adhésif de protection de surface de tranche de semi-conducteur fabriqué à l'aide de celle-ci

Info

Publication number
WO2025211696A1
WO2025211696A1 PCT/KR2025/004233 KR2025004233W WO2025211696A1 WO 2025211696 A1 WO2025211696 A1 WO 2025211696A1 KR 2025004233 W KR2025004233 W KR 2025004233W WO 2025211696 A1 WO2025211696 A1 WO 2025211696A1
Authority
WO
WIPO (PCT)
Prior art keywords
adhesive film
composition
meth
semiconductor wafer
protecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/KR2025/004233
Other languages
English (en)
Korean (ko)
Inventor
최홍준
박효순
조원섭
허진영
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Chem Ltd
Original Assignee
LG Chem Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Chem Ltd filed Critical LG Chem Ltd
Priority claimed from KR1020250042033A external-priority patent/KR20250146641A/ko
Publication of WO2025211696A1 publication Critical patent/WO2025211696A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/24—Homopolymers or copolymers of amides or imides
    • C09J133/26—Homopolymers or copolymers of acrylamide or methacrylamide
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • the present specification relates to a composition for an adhesive film and an adhesive film for protecting a semiconductor wafer surface manufactured using the same.
  • a wafer protection adhesive tape is attached to the surface of the wafer to protect the wafer, and then the back of the wafer is polished to prevent the wafer from flipping or warping.
  • the thickness of the semiconductor wafer itself is polished to a level of 10 to 100 ⁇ m, and the existing wafer protection adhesive tape causes the wafer to warp during the polishing process, and this warping is the main cause of various problems in subsequent processes.
  • wafers are formed with relatively large unevenness, such as bumps. Therefore, if the adhesive tape for semiconductor wafer protection does not sufficiently fill the unevenness, there is a high risk of damage to the semiconductor wafer during the semiconductor wafer polishing process. Therefore, an unevenness absorption capacity that can easily fill the unevenness is required.
  • composition for an adhesive film comprising a thermosetting resin including an amide group-containing monomer and a hydroxyl group-containing monomer; a thermosetting agent; and a photoinitiator, wherein the composition for an adhesive film comprises more than 100 parts by weight and less than 4,000 parts by weight of the photoinitiator relative to 100 parts by weight of the thermosetting agent.
  • Another embodiment of the present specification provides an adhesive layer comprising the composition for the adhesive film or a cured product thereof.
  • Another embodiment of the present specification provides a method for manufacturing an adhesive film for protecting a surface of a semiconductor wafer, comprising the step of forming an adhesive layer by applying a composition for an adhesive film on a substrate layer, wherein the composition for an adhesive film comprises a thermosetting resin including an amide group-containing monomer and a hydroxyl group-containing monomer, a thermosetting agent, and a photoinitiator, and wherein the composition for an adhesive film comprises the photoinitiator in an amount of more than 100 parts by weight and less than 4,000 parts by weight relative to 100 parts by weight of the thermosetting agent.
  • An adhesive film for protecting a semiconductor wafer surface does not generate residue on the wafer surface after peeling.
  • An adhesive film for protecting a semiconductor wafer surface does not cause a bump ball pressing phenomenon on the wafer surface after peeling.
  • Figure 1 is a cross-sectional view of an adhesive film for protecting a semiconductor wafer surface according to one embodiment of the present specification.
  • the unit “parts by weight” may mean the weight ratio between each component.
  • monomer may mean a unit compound that can be converted into a polymer compound by a polymerization reaction, and may mean that all or part of two or more substituents in the structure of the compound are removed and a radical for bonding with another unit of the polymer is positioned at that position, and may mean a state in which the compound is polymerized and bound within the polymer.
  • a monomer when it is said to include a monomer, it may be included as the compound itself, or the monomer may be included in a state in which it is polymerized in any order and bound within the polymer.
  • structures derived from the monomer may be included as repeating units within the polymer or copolymer.
  • thermosetting resin includes an amide group-containing monomer and a hydroxyl group-containing monomer. This also includes a case where the thermosetting resin includes a polymer of the amide group-containing monomer and the hydroxyl group-containing monomer in addition to each monomer.
  • the unsaturated alcohol may be at least one selected from vinyl alcohol and allyl alcohol, but is not limited thereto.
  • the hydroxyalkyl (meth)acrylates may be at least one selected from among hydroxyethyl (meth)acrylate, hydroxypropyl (meth)acrylate, hydroxybutyl (meth)acrylate, hydroxypentyl (meth)acrylate, hydroxyhexyl (meth)acrylate, hydroxyoctyl (meth)acrylate, and hydroxydecyl (meth)acrylate, but are not limited thereto.
  • the thermosetting resin further comprises an alkyl (meth)acrylate monomer.
  • the thermosetting resin comprises not only an alkyl (meth)acrylate monomer but also a polymer of an amide group-containing monomer, a hydroxyl group-containing monomer, and an alkyl (meth)acrylate monomer.
  • the alkyl (meth)acrylate monomer is an acrylate compound having a straight-chain or branched alkyl group having 1 to 15 carbon atoms, and may be, for example, at least one selected from the group consisting of methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, isopropyl (meth)acrylate, n-butyl (meth)acrylate, sec-butyl (meth)acrylate, pentyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, 2-ethylbutyl (meth)acrylate, n-octyl (meth)acrylate, isooctyl (meth)acrylate, isononyl (meth)acrylate, and lauryl (meth)acrylate, tetradecyl (meth)acrylate, but only Not limited.
  • the alkyl (meth)acrylate monomer is ethylhexyl (meth)acrylate. Specifically, the alkyl (meth)acrylate monomer is ethylhexyl acrylate.
  • the thermosetting resin includes a composition for producing a thermosetting resin or a cured product thereof.
  • the composition for producing a thermosetting resin further includes an alkyl (meth)acrylate monomer.
  • the composition for producing a thermosetting resin includes a radical initiator.
  • the radical initiator may be any material used in the art without limitation.
  • it may be AIBN (azobisisobutyronitrile), but is not limited thereto.
  • the composition for the adhesive film contains 25 to 35 parts by weight of the thermosetting resin based on 100 parts by weight of the composition for the adhesive film.
  • the thermosetting resin contains 5 to 15 parts by weight of a hydroxyl group-containing monomer relative to 100 parts by weight of the thermosetting resin.
  • the thermosetting resin in the adhesive film composition is thermoset and/or photoset to form a main chain. Since the main chain is formed by polymerization or copolymerization of the aforementioned types of amide group-containing monomers and hydroxyl group-containing monomers, when considering the positional relationship and reactivity, it can easily form a chemical bond with a compound (e.g., an isocyanate compound) for forming a side chain, and since a main chain having an appropriate chain length is formed, the desired level of adhesiveness and peeling force reduction rate can be realized.
  • a compound e.g., an isocyanate compound
  • thermosetting agent may include a bifunctional to hexafunctional isocyanate compound.
  • the isocyanate compound is used as a thermosetting agent, thereby obtaining the advantage of a fast curing speed.
  • the isocyanate compound has an isocyanate group (-NCO) included in the molecule that reacts with the hydroxyl group (-OH) of the above-mentioned monomer to form a side chain.
  • -NCO isocyanate group
  • the composition for the adhesive film contains 0.5 to 10 parts by weight of the thermosetting agent based on 100 parts by weight of the composition for the adhesive film. Specifically, it contains 0.5 to 8 parts by weight.
  • the adhesive film for protecting the surface of a semiconductor wafer can exhibit excellent tensile strength required, and the adhesive film can be removed without residue.
  • the composition for the adhesive film includes a photoinitiator.
  • the photoinitiator may serve to initiate a photocuring reaction of the composition.
  • the retarder delays curing and serves to ensure stability after mixing the adhesive composition.
  • it may be acetylacetone, but is not limited thereto.
  • the gelation degree of the composition for the adhesive film before irradiation with 700 mJ of UV is not limited. For example, it may be 60% or more, 70% or more, 80% or more, or 89% or more, and less than 95%.
  • a release PET film coat the adhesive film composition on the release PET film, and cut it into 50 mm x 50 mm sizes. After removing the release PET film, measure the weight (A), and soak the object from which the release PET film has been removed in ethyl acetate for one day. Prepare a steel mesh and measure the weight (B). Pour the object soaked in ethyl acetate for one day onto the steel mesh to remove the solvent, and dry the filtered material in an oven at 100°C for 1 hour. Measure the weight (C) after drying.
  • the viscosity of the adhesive film composition may be from about 300 cps to about 3000 cps.
  • the adhesive film composition while containing the aforementioned components to achieve the desired effect in one embodiment, can also achieve excellent coating properties when applied by controlling its viscosity within the aforementioned range.
  • the viscosity can be measured using a method used in the art.
  • the composition for an adhesive film is a composition for an adhesive film for protecting a semiconductor wafer surface.
  • One embodiment of the present specification provides an adhesive layer comprising the aforementioned composition for an adhesive film or a cured product thereof.
  • the adhesive film composition is curable by heat treatment or light treatment.
  • the adhesive film composition When the adhesive film composition is cured, it can be expressed as a cured product of the adhesive film composition.
  • the thickness of the adhesive layer may be 5 ⁇ m or more and 100 ⁇ m or less. Specifically, the thickness of the adhesive layer may be 10 ⁇ m or more, 15 ⁇ m or more, 20 ⁇ m or more, 25 ⁇ m or more, or 30 ⁇ m or more, and 95 ⁇ m or less, 90 ⁇ m or less, 85 ⁇ m or less, 80 ⁇ m or less, or 75 ⁇ m or less.
  • the thickness of the adhesive layer is within the above-mentioned range, an adhesive film for protecting the surface of a semiconductor wafer having excellent mechanical properties can be realized.
  • One embodiment of the present specification provides an adhesive film for protecting a semiconductor wafer surface, comprising a substrate layer; an intermediate layer; and the adhesive layer.
  • the adhesive film protecting the surface of the semiconductor wafer serves to prevent damage to circuit patterns on the surface during the precision machining process of the semiconductor wafer, or contamination of the wafer by foreign substances or chemicals generated during the process.
  • the adhesive film must be removed after the precision machining of the semiconductor wafer is completed, and it is important that the adhesive film be removed without damaging the surface of the wafer and without leaving any residue when peeled.
  • FIG. 1 schematically illustrates a cross-section of an adhesive film for protecting a semiconductor wafer surface according to one embodiment of the present invention.
  • the gelation degree of the adhesive layer before irradiation with 700 mJ UV is not limited. For example, it may be 60% or more, 70% or more, 80% or more, or 89% or more, and less than 95%.
  • the gelation degree of the adhesive layer is measured by the same method as described above in the composition for the adhesive film.
  • the substrate layer may be surface-treated to have excellent bonding strength with other layers, and for example, the substrate layer may be primed on the surface in contact with the thermosetting intermediate layer.
  • the thickness of the substrate layer may be 30 ⁇ m or more and 200 ⁇ m or less. Specifically, the thickness of the substrate layer may be 40 ⁇ m or more, 50 ⁇ m or more, 60 ⁇ m or more, 70 ⁇ m or more, 80 ⁇ m or more, 90 ⁇ m or more, or 100 ⁇ m or more, and the thickness of the substrate layer may be 190 ⁇ m or less, 180 ⁇ m or less, 170 ⁇ m or less, 160 ⁇ m or less, or 150 ⁇ m or less.
  • the adhesive film for protecting the surface of a semiconductor wafer having excellent mechanical properties can be implemented.
  • the intermediate layer includes a composition for forming an intermediate layer including an amide group-containing monomer and a hydroxyl group-containing monomer, or a cured product thereof.
  • the composition for forming the intermediate layer further includes at least one of an acrylate monomer and an acrylic acid monomer.
  • the acrylate monomer is an alkyl acrylate or an alkyl methacrylate. Specifically, among methyl acrylate, ethyl acrylate, propyl acrylate, isopropyl acrylate, n-butylacrylate, isobutylacrylate, n-amyl acrylate, isoamyl acrylate, n-ethylhexylacrylate, 2-ethylhexylacrylate, methyl methacrylate, ethyl methacrylate, propyl methacrylate, isopropyl methacrylate, n-butyl methacrylate, isobutyl methacrylate, n-amyl methacrylate, isoamyl methacrylate, n-hexyl methacrylate, n-ethylhexyl methacrylate, 2-ethylhexyl methacrylate, lauryl acrylate,
  • the acrylic acid monomer is acrylic acid or methacrylic acid.
  • the composition for forming an intermediate layer contains 1 to 10 parts by weight of the amide group-containing monomer based on 100 parts by weight of the composition for forming an intermediate layer.
  • the composition for forming the intermediate layer contains 20 to 40 parts by weight of the acrylate monomer relative to 100 parts by weight of the composition for forming the intermediate layer.
  • the composition for forming the intermediate layer contains 5 to 15 parts by weight of the acrylic acid monomer based on 100 parts by weight of the composition for forming the intermediate layer.
  • the intermediate layer can realize excellent step absorption performance and can be attached to the substrate layer and the adhesive layer with appropriate adhesive strength, thereby contributing to securing durability of the adhesive film itself.
  • the photoinitiator is not limited as long as it can initiate a photocuring reaction of the composition.
  • Specific examples of the photoinitiator are the same as those described in the adhesive layer.
  • the photocuring agent may be at least one selected from the group consisting of 1,4-butanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, 1,2-ethylene glycol di(meth)acrylate, polyethylene glycol di(meth)acrylate, and 1,12-dodecanediol di(meth)acrylate, but is not limited thereto.
  • the thickness of the intermediate layer may be 90 ⁇ m or more and 1,000 ⁇ m or less. Specifically, the thickness of the intermediate layer may be 100 ⁇ m or more, 120 ⁇ m or more, 140 ⁇ m or more, or 150 ⁇ m or more, and may be 950 ⁇ m or less, 900 ⁇ m or less, 850 ⁇ m or less, or 800 ⁇ m or less. When the thickness of the intermediate layer is within the above-mentioned range, an adhesive film for protecting a semiconductor wafer surface with excellent mechanical properties can be realized.
  • the adhesive film has a tensile strength of 5.6 MPa or more after 700 mJ UV irradiation. Specifically, the adhesive film has a tensile strength of 5.6 MPa or more after 700 mJ UV irradiation and a modulus of 0.209 or more.
  • the adhesive film has a tensile strength of 6.2 MPa or more after 1000 mJ UV irradiation. Specifically, the adhesive film has a tensile strength of 6.2 MPa or more after 1000 mJ UV irradiation and a modulus of 0.235 or more.
  • the upper limits of the above tensile strength and modulus are not limited, but for example, the tensile strength may be 30 Mpa or less, and the modulus may be 0.5 or less.
  • the adhesive film exhibits a tensile strength within the aforementioned range, thereby having the effect of preventing residue and ball compression.
  • the adhesive film has a Tack ratio of 48 or more when irradiated with 0 mJ of UV and when irradiated with 1000 mJ of UV.
  • the upper limit of the above Tack ratio is not limited, but may be, for example, 200 or less.
  • the Tack ratio is measured by measuring and comparing the Tack value when the UV irradiation amount on the adhesive film is different using a SUS Ball probe.
  • the Tack value of the adhesive film is measured using a SUS Ball probe in a texture analyzer under the conditions of a measurement speed of 10 mm/sec, a force of 500 g, and a contact time of 10 seconds, and then the Tack ratio can be measured by comparing the Tack values when the irradiation amount is different (0, 300, 700, and 1000 mJ, respectively).
  • the composition for the adhesive film comprises a thermosetting resin including an amide group-containing monomer and a hydroxyl group-containing monomer, a thermosetting agent, and a photoinitiator,
  • the present invention provides a method for manufacturing an adhesive film for protecting a semiconductor wafer surface, wherein the composition for the adhesive film comprises more than 100 parts by weight and less than 4,000 parts by weight of the photoinitiator relative to 100 parts by weight of the thermal curing agent.
  • a step of forming an intermediate layer is further included before the step of forming an adhesive layer on the substrate layer.
  • the step includes a step of forming an intermediate layer on the substrate layer; and a step of applying a composition for an adhesive film on the intermediate layer to form an adhesive layer.
  • the step of forming an intermediate layer on the substrate layer may include a step of applying an intermediate layer forming composition on top of a separate release film and then photocuring it to produce a laminate of the intermediate layer and the release film; and a step of laminating the intermediate layer of the laminate so that it is in contact with one surface of the substrate layer and then peeling off the release film.
  • thermosetting agent MDI, Basf
  • photoinitiator I-651, Basf
  • a release PET film was prepared, an adhesive coating was applied to the release PET film, and then cut to a size of 50 mm x 50 mm. After removing the release PET film, the weight (A) was measured, and the object from which the release PET film had been removed was immersed in ethyl acetate for one day. A steel mesh was prepared, and the weight (B) was measured. The object immersed in ethyl acetate for one day was poured onto the steel mesh, and the solvent was removed. The filtered material was dried in an oven at 100°C for 1 hour. The weight (C) after drying was measured.
  • a release PET film was prepared, and an adhesive coating solution was coated on the release PET film. After covering the release PET film on the surface where the composition for the adhesive film was exposed, 700 mJ UV was irradiated. The irradiated material was cut into a size of 50 mm x 50 mm. After removing both release PET films, the weight (A) was measured, and the object from which the release PET films were removed was immersed in ethyl acetate for one day. An iron mesh was prepared, and the weight (B) was measured. The object immersed in ethyl acetate for one day was poured onto the iron mesh to remove the solvent, and the filtered material was dried in an oven at 100°C for 1 hour. The weight (C) after drying was measured.
  • the gelation degree before and after UV irradiation was measured using the following mathematical formula 1.
  • Samples were prepared according to UV irradiation doses (0, 300, 700, and 1000 mJ).
  • the tack values of the samples were measured using a SUS ball probe in a texture analyzer under the conditions of a measurement speed of 10 mm/sec, a force of 500 g, and a contact time of 10 seconds.
  • Wafers measuring 50 mm x 50 mm were prepared. Samples measuring 25 mm x 150 mm were attached to the wafer using a 2 kg roller. After 1 hour, the sample was irradiated with UV light and removed. The sample residue and ball pressure were checked under a microscope.
  • thermosetting agent content For samples with changed thermosetting agent content, the gelation degree before and after UV exposure was measured using the same method as above, and is listed in Table 1 below.
  • the photoinitiator when included in an amount of 4000 parts by weight or more per 100 parts by weight of the heat curing agent (Comparative Examples 1 to 4), it can be confirmed that the gelation degree, tack ratio, and tensile strength are reduced, and residue and ball compression occur, making it unsuitable as an adhesive film for protecting the surface of a semiconductor wafer.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

La présente description concerne une composition de film adhésif, qui comprend : une résine thermodurcissable comprenant un monomère contenant un groupe amide et un monomère contenant un groupe hydroxyle ; un agent thermodurcissable ; et un photo-initiateur, la composition de film adhésif comprenant plus de 100 parties en poids et moins de 4 000 parties en poids du photo-initiateur sur la base de 100 parties en poids de l'agent thermodurcissable.
PCT/KR2025/004233 2024-04-01 2025-04-01 Composition de film adhésif et film adhésif de protection de surface de tranche de semi-conducteur fabriqué à l'aide de celle-ci Pending WO2025211696A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20240044010 2024-04-01
KR10-2024-0044010 2024-04-01
KR1020250042033A KR20250146641A (ko) 2024-04-01 2025-04-01 점착 필름용 조성물 및 이를 이용하여 제조된 반도체 웨이퍼 표면 보호용 점착 필름
KR10-2025-0042033 2025-04-01

Publications (1)

Publication Number Publication Date
WO2025211696A1 true WO2025211696A1 (fr) 2025-10-09

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2025/004233 Pending WO2025211696A1 (fr) 2024-04-01 2025-04-01 Composition de film adhésif et film adhésif de protection de surface de tranche de semi-conducteur fabriqué à l'aide de celle-ci

Country Status (1)

Country Link
WO (1) WO2025211696A1 (fr)

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JP5560537B2 (ja) * 2007-07-10 2014-07-30 住友ベークライト株式会社 半導体ウエハ加工用粘着テープ
KR20170109390A (ko) * 2016-03-21 2017-09-29 주식회사 엘지화학 반도체 웨이퍼 표면 보호용 점착 필름
KR20220112881A (ko) * 2021-02-04 2022-08-12 주식회사 엘지화학 반도체 웨이퍼 표면 보호용 점착필름
KR20230170296A (ko) * 2022-06-10 2023-12-19 주식회사 엘지화학 반도체 웨이퍼 표면 보호용 테이프를 위한 중간층 형성용 조성물 및 이를 포함하는 반도체 웨이퍼 표면 보호용 테이프
KR20240000132A (ko) * 2022-06-23 2024-01-02 주식회사 엘지화학 반도체 공정용 기재

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5560537B2 (ja) * 2007-07-10 2014-07-30 住友ベークライト株式会社 半導体ウエハ加工用粘着テープ
KR20170109390A (ko) * 2016-03-21 2017-09-29 주식회사 엘지화학 반도체 웨이퍼 표면 보호용 점착 필름
KR20220112881A (ko) * 2021-02-04 2022-08-12 주식회사 엘지화학 반도체 웨이퍼 표면 보호용 점착필름
KR20230170296A (ko) * 2022-06-10 2023-12-19 주식회사 엘지화학 반도체 웨이퍼 표면 보호용 테이프를 위한 중간층 형성용 조성물 및 이를 포함하는 반도체 웨이퍼 표면 보호용 테이프
KR20240000132A (ko) * 2022-06-23 2024-01-02 주식회사 엘지화학 반도체 공정용 기재

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