WO2025211035A1 - Ranging device - Google Patents
Ranging deviceInfo
- Publication number
- WO2025211035A1 WO2025211035A1 PCT/JP2025/005100 JP2025005100W WO2025211035A1 WO 2025211035 A1 WO2025211035 A1 WO 2025211035A1 JP 2025005100 W JP2025005100 W JP 2025005100W WO 2025211035 A1 WO2025211035 A1 WO 2025211035A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light
- row
- time
- reflected
- distance measuring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/491—Details of non-pulse systems
- G01S7/4912—Receivers
- G01S7/4915—Time delay measurement, e.g. operational details for pixel components; Phase measurement
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
Definitions
- the present invention relates to a distance measuring device.
- a known distance measurement method is the TOF (Time-Of-Flight) method, which measures the distance to an object by measuring the time between when a light-emitting element emits light and when the reflected light is detected.
- TOF Time-Of-Flight
- Patent Document 1 discloses a configuration in which multiple light-emitting elements and multiple light-receiving elements are arranged in a two-dimensional array, light is irradiated onto an object via an imaging lens, and the reflected light is received via the imaging lens, thereby obtaining three-dimensional distance information without a drive unit.
- the angle of view of the light emitted and the angle of view of the light received must be roughly equal.
- Patent document 2 discloses a configuration that improves distance measurement accuracy by calculating the time difference between a reference light corresponding to the laser emission timing and the light reflected by an object.
- Patent Document 2 requires the provision of an optical system for receiving the reference light in addition to the optical system for receiving the reflected light, which results in an increase in the size of the distance measuring device.
- the distance measuring device of the present invention comprises a light-emitting element array including a plurality of light-emitting elements, a light-receiving element array including a plurality of light-receiving elements, a timer for measuring time, a beam splitter having a half mirror and a reflecting surface, and a distance measuring unit for measuring the distance to an object based on the time measured by the timer, wherein light emitted from the light-emitting element is split into a first light and a second light by the half mirror, the first light is reflected by the object and incident on one of the plurality of light-receiving elements, and the second light is reflected by the reflecting surface and incident on one of the plurality of light-receiving elements, and the distance measuring unit measures the distance to the object based on the time obtained by subtracting the time taken for the second light to be reflected by the reflecting surface and incident on one of the plurality of light-receiving elements from the time taken for the first light to be reflected by the object
- FIG. 1 is a block diagram of a distance measuring device.
- FIG. 2 is a block diagram of the light emitting unit.
- FIG. 3 is a block diagram of the measurement unit.
- FIG. 4 is a schematic diagram of a pixel.
- FIG. 5 is a block diagram of a TDC array.
- FIG. 6 is a schematic diagram of an oscillator.
- FIG. 7 is a table showing the time variations of the output signal of the buffer and the internal signal of the oscillator.
- FIG. 8 is a timing chart showing the process up to the end of the counting operation of the TDC.
- FIG. 9 is an enlarged view of a part of FIG.
- FIG. 10 is a block diagram of the oscillation adjustment circuit.
- 11A to 11D are cross-sectional views of the beam splitter according to the first embodiment.
- [Distance measuring device] 1 is a block diagram illustrating an example of the configuration of a distance measuring device according to embodiment 1. Solid arrows connecting blocks (components) indicate signal exchange, dashed arrows indicate light irradiated onto an object, and dashed arrows indicate light reflected from the object.
- the distance measuring device has a light emitting unit 110, a measurement unit 120, an imaging lens 130, an overall control unit 140, and a beam splitter 150.
- the light-emitting unit 110 has a light source unit 113 and a light source control unit 114.
- the light source unit 113 has a light-emitting element array 111 including multiple light-emitting elements, and a light-emitting element drive unit 112 that drives each light-emitting element in accordance with instructions from the light source control unit 114.
- multiple light-emitting elements are arranged in a two-dimensional array (matrix), and the light source control unit 114 (light-emitting control unit) causes each row of light-emitting elements to emit light individually.
- Beam splitter 150 has a half mirror 151 that transmits part of the light and reflects part of it, and a reflective surface 152 that reflects the light.
- each light-emitting element When each light-emitting element emits a pulse of light, it is output into space via the imaging lens 130.
- the pulse of light emitted from different light-emitting elements is output to different angles of view (ranges) in space.
- a portion of the output light (illumination light) is reflected by the object and enters the light-receiving element array 121 via the imaging lens 130 as reflected light.
- the time from when the light-emitting element emits illumination light to when the light-receiving element array 121 receives the reflected light is the time of flight (TOF), and this time is measured by the TDC array 122.
- TOF time of flight
- the TDC array 122 measures the time of flight TOF multiple times, and the signal processing unit 123 creates a histogram of the results of the multiple measurements and removes noise based on the histogram (for example, averaging the results of the multiple measurements).
- the light-emitting unit 110 includes the light source unit 113 and the light source control unit 114.
- a wavelength in the near-infrared band can suppress the effects of ambient light.
- VCSELs can be manufactured using semiconductor processes from materials used in edge-emitting lasers and surface-emitting lasers. If GaAs-based semiconductor materials are used as the main material, a VCSEL that emits light with a wavelength in the near-infrared band can be manufactured.
- the dielectric multilayer film that forms the DBR (distributed Bragg reflector) reflector that makes up the VCSEL can be constructed from two thin films made of materials with different refractive indices that are alternately and periodically stacked (GaAs/AlGaAs). The wavelength of the light emitted by the VCSEL can be changed by adjusting the element combination and composition of the compound semiconductor.
- the measurement unit 120 includes a light-receiving element array 121, a TDC array 122, a signal processing unit 123, a measurement control unit 124, and a row selection circuit 125.
- the light-receiving element array 121 includes a plurality of pixels 301 arranged in a two-dimensional array. Each pixel includes a light-receiving element.
- FIG. 4 is a schematic diagram showing an example configuration of a pixel 301.
- the pixel 301 has a SPAD (Single Photon Avalanche Diode) element 401, which is a light-receiving element, a load transistor 402, an inverter 403, and a pixel output circuit 404.
- the pixel output circuit 404 is connected to the row selection line 303 and pixel output line 304.
- the SPAD element 401 is a type of avalanche diode, and has a light-receiving region and an avalanche region.
- the voltage of the anode electrode Vbd is set so that a reverse bias equal to or greater than the breakdown voltage is applied to the avalanche region of the SPAD element 401. At this time, no current flows through the load transistor 402, so the cathode potential Vc is close to the power supply voltage Vdd, and the inverter output signal is "0.”
- the pixel output circuit 404 does not output the inverter output to the pixel output line 304 when a selection signal is not supplied from the row selection line 303, but outputs the output of the inverter 403 to the pixel output line 304 when a selection signal is supplied from the row selection line 303.
- the inverter output is output to the TDC array 122 as a low-delay digital signal.
- the pixel output lines 304 which are twice the number of pixels 301 in one row, are each connected to the same number of TDCs 501.
- Two pixel output lines 304 are connected to the pixel output circuit 404 of each pixel 301, and the pixel output circuit 404 outputs a signal (inverter output) to one of the two connected pixel output lines 304.
- the TDC array 122 By using different pixel output lines 304 between rows, it becomes possible for the TDC array 122 to receive output signals from pixels 301 in two rows.
- TDC 501 has an oscillator 511, an oscillation count circuit 521, and a synchronous clock count circuit 531.
- the count result of synchronous clock count circuit 531 constitutes the upper bits
- the internal signal of oscillator 511 constitutes the lower bits
- the count result of oscillation count circuit 521 constitutes the intermediate bits.
- the synchronous clock count circuit 531 makes rough measurements
- the internal signal of oscillator 511 makes fine measurements
- the oscillation count circuit 521 measures the interval between them. Note that each measurement bit may have a redundant bit.
- Fig. 7 is a table showing the time variations of the output signals of buffers 611 to 618 and the internal signal of oscillator 511.
- Fig. 7 shows the output signals of buffers 611 to 618 at the time of reset and the internal signal of oscillator 511.
- Fig. 7 shows the output signals of buffers 611 to 618 and the internal signal of oscillator 511 each time the delay time t buff for one buffer stage has elapsed since oscillation switch 630 was turned on.
- the oscillator output which is the output of the buffer 618, is input to an oscillation count circuit 521.
- the oscillation count circuit 521 counts the rising edges of the oscillator output to measure time with a time resolution of 16 ⁇ t buff .
- Figure 8 is a timing chart from when a light-emitting element belonging to a specific row of the light-emitting element array 111 emits light, until the SPAD element 401 receives the light, and the counting operation of the TDC 501 ends. It shows changes in the cathode potential Vc of the SPAD element 1401, the pixel output signal, the synchronous clock, the count value of the synchronous clock count circuit 531, the output of the oscillation start/stop signal generation circuit, the oscillator output, and the count value of the oscillation count circuit 521.
- the cathode potential Vc of the SPAD element 401 is an analog voltage, with the upper side of the page indicating a higher voltage.
- the synchronous clock, oscillation start/stop signal generation circuit output, and oscillator output are digital signals, with the upper side of the page indicating an on state and the lower side indicating an off state.
- the count values of the synchronous clock count circuit 531 and oscillation count circuit 521 are digital values and are shown as decimal numbers.
- Figure 9 is an enlarged view of the oscillation start/stop signal generation circuit output, oscillator output, count value of oscillation count circuit 521, and oscillator internal signal from time 803 to time 805 in Figure 8.
- the oscillator internal signal is a digital value and is shown as a decimal number.
- TDC 501 measures the time from time 801 when a light-emitting element belonging to a specific row of the light-emitting element array 111 emits light to time 803 when a photon is incident on the SPAD element 401 of the pixel 301 and the pixel output signal changes from 0 to 1.
- a light emission signal is sent from the overall control unit 140 to the light emission unit 110.
- the synchronization clock count circuit 531 begins counting the rising edges of the synchronization clock from time 801, when the light emission signal is sent.
- Time 805 is the timing when the synchronous clock first rises after time 803 when the oscillator 511 turns on.
- the output of the oscillation start/stop signal generation circuit 640 becomes "0" and the oscillation switch 630 turns off.
- the output of the oscillation start/stop signal generation circuit 640 becomes "0" (when the oscillation switch 630 turns off)
- oscillation ends and the oscillator internal signal is held as is. Also, because oscillation ends, the oscillation count circuit 521 also stops counting.
- the count result D Gclk of the synchronous clock count circuit 531 is a value obtained by measuring the time from time 801 to time 802 in units of 2 7 ⁇ t buff .
- the count result D ROclk of the oscillation count circuit 521 is a value obtained by measuring the time from time 803 to time 804 in units of 2 4 ⁇ t buff .
- the oscillator internal signal D ROin is a value obtained by measuring the time from time 804 to time 805 in units of t buff .
- the TDC 501 performs the following processing on these values and outputs the processed values to the signal processing unit 123, thereby completing one measurement operation.
- D RO obtained by equation (2) is a value obtained by measuring the time from time 803 to time 805 in units of t buff . Furthermore, the time from time 802 to time 805 is equal to one cycle of the synchronous clock, and is therefore 2 7 ⁇ t buff . Therefore, as shown in equation (3) below, by subtracting D RO from one cycle of the synchronous clock and adding D Gclk to the obtained value, the value D ToF obtained by measuring the time of flight of light (the time from time 801 to time 803) in units of t buff can be obtained.
- the delay time t buff for one buffer stage varies due to factors arising from the manufacturing process such as transistor manufacturing errors, fluctuations in the voltage applied to the TDC circuit, and temperature, so an oscillation adjustment circuit 541 is provided.
- the oscillation adjustment circuit 541 has a dummy oscillator 1001, a 1 ⁇ 2 3 (1 ⁇ 8) frequency divider 1002, and a phase comparator 1003.
- the dummy oscillator 1001 has the same configuration as the oscillator 511 mounted in the TDC 501.
- the output of dummy oscillator 1001 is input to 1/2/3 frequency divider 1002.
- 1/2/3 frequency divider 1002 outputs a clock signal obtained by dividing the frequency of the input clock signal by 2/3 .
- the synchronous clock and the output of 1/2/3 frequency divider 1002 are input to phase comparator 1003.
- Phase comparator 1003 compares the frequency of the synchronous clock with the frequency of the clock signal output by 1/2/3 frequency divider 1002.
- Phase comparator 1003 increases the output voltage when the frequency of the synchronous clock is higher, and decreases the output voltage when the frequency of the synchronous clock is lower.
- the output voltage of phase comparator 1003 is input as an adjustment voltage to delay adjustment current source 620 of oscillator 511, thereby adjusting the delay so that the oscillation frequency of oscillator 511 is 2/3 times that of the synchronous clock.
- the frequency of the oscillator 511 is determined based on the synchronous clock frequency. Therefore, by generating the synchronous clock signal using an external IC that can output a constant frequency regardless of changes in process, voltage, or temperature, it is possible to suppress variations in the oscillation frequency of the oscillator 511 due to changes in process, voltage, or temperature. For example, by inputting a 160 MHz clock signal as the synchronous clock signal, the oscillation frequency of the oscillator 511 becomes 1.28 GHz, which is eight times the synchronous clock frequency.
- the delay time t buff for one buffer stage which is the time resolution of the TDC 501, is 48.8 ps.
- FIG. 11A is a schematic diagram showing cross sections of the beam splitter 150, the light-emitting element array 111, the light-receiving element array 121, and the imaging lens 130.
- the light-emitting element array 111 is in a conjugate relationship with the light-receiving element array 121 via the half mirror 151 of the beam splitter 150.
- the multiple light-emitting elements of the light-emitting element array 111 are each in a conjugate relationship with the multiple light-receiving elements of the light-receiving element array 121 via the half mirror 151 of the beam splitter 150.
- the row numbers of the light-emitting element array 111 are assigned in ascending order from smaller to larger Yv in Figure 11A, and the row numbers of the light-receiving element array 121 are assigned in ascending order from smaller to larger Y in Figure 11A.
- Light-emitting elements and light-receiving elements with the same row number have a conjugate relationship with each other.
- Figure 11B is a schematic diagram showing the optical path of light emitted from the light-emitting element in row number 1 in the light-emitting element array 111.
- Light 1110 emitted from the light-emitting element array 111 is split into light 1111 that is reflected by the half mirror 151 and irradiated onto the object, and light 1112 that passes through the half mirror 151 and heads toward the reflecting surface 152.
- FIG. 11C is a schematic diagram showing reflected light (reference light) 1113 obtained when light 1112 is reflected by reflecting surface 152
- FIG. 11D is a schematic diagram showing reflected light (object-reflected light) 1114 obtained when light 1111 is reflected by an object.
- Object-reflected light 1114 is incident on a light-receiving element that is conjugate with the light-emitting element in row number 1 that emitted light 1110.
- reference light 1113 is incident on a light-receiving element that is conjugate with a light-emitting element in a different row from the light-emitting element in row number 1.
- the reference light is incident on a light-receiving element that is conjugate with a light-emitting element that is adjacent in the column direction to the light-emitting element that emitted the light. Therefore, in FIG. 11C, the reference light 1113 is incident on a light-receiving element that is conjugate with the light-emitting element in row number 2.
- the reflective surface 152 transmits, absorbs, or both transmits, light within a certain wavelength range of the light emitted from the light-emitting element array 111 so as to reduce the reflectance of that wavelength.
- the reflective surface 152 may be formed from a multilayer film including dielectric layers with different refractive indices, or may include an absorbing material such as a metal.
- the multiple light-emitting elements (and multiple light-receiving elements) are arranged at equal intervals.
- the reflecting surface 152 faces the light-emitting element array 111, is flat in the column direction (depth direction in the paper), and has multiple continuous recesses in the row direction (Yv direction), each with a width twice the spacing between the multiple light-emitting elements.
- the recesses are formed by two flat surfaces, but this is not limited to this.
- the recesses may be formed by curved surfaces.
- the recesses may have a shape similar to the curved surface of a cylindrical lens.
- the reference light 1113 enters the half mirror 151 shifted by one row relative to the light 1110 emitted from the light-emitting element, and enters a light-receiving element that is conjugate with the light-emitting element adjacent to the light-emitting element that emitted the light.
- a reference light signal is subtracted from the object reflected light signal obtained by the TDC array 122.
- the object reflected light signal indicates the time from when the light emission signal is emitted until the object reflected light is detected
- the reference light signal indicates the time from when the light emission signal is emitted until the reference light is detected.
- Both the object reflected light signal and the reference light signal contain a component of the time from when the light emission signal is emitted until the light-emitting element emits light. Therefore, by subtracting the reference light signal from the object reflected light signal, it is possible to obtain a time of flight (TOF) that contains a small component of the time from when the light emission signal is emitted until the light-emitting element emits light.
- TOF time of flight
- Fig. 12 is a flowchart showing an example of a distance measurement operation according to the first embodiment.
- the distance measurement operation for acquiring three-dimensional distance information will be described with reference to Fig. 12.
- the distance measurement operation in Fig. 12 is realized, for example, by the CPU of the overall control unit 140 loading a program stored in the ROM of the overall control unit 140 into the RAM of the overall control unit 140 and executing the program. For example, when an instruction to perform distance measurement is given to the distance measurement device, the distance measurement operation in Fig. 12 starts.
- step S1201 the overall control unit 140 sets the value of row counter j to 1 (resets row counter j).
- step S1202 the overall control unit 140 controls the row selection circuit 125 to select the row (row number j) corresponding to row counter j. This sets the signal of the pixel in row number j and the signal of the pixel in row number j+1 to be output to the TDC array 122 via the pixel output line 304.
- the pixel in row number j receives object-reflected light that is emitted from row number j and reflected by the object.
- the pixel in row number j+1 receives reference light that is emitted from row number j and reflected by the reflecting surface 152 of the beam splitter 150.
- step S1203 the overall control unit 140 resets the histogram circuits, of which the same number as the TDCs 501 are arranged within the signal processing unit 123, and resets the light emission count counter i. Resetting the histogram circuits sets a state in which no light detection histogram showing the change over time in the number of detected photons is present (has not been created), and resetting the light emission count counter i sets it to 1.
- step S1204 the overall control unit 140 operates the light-emitting element row drive circuit 202 for the row (row number j) corresponding to row counter j, causing the light-emitting elements belonging to that row to emit short pulses of light.
- the overall control unit 140 sends a light-emitting signal to the light-emitting unit 110 and simultaneously instructs the measurement unit 120 to start measurement.
- step S1205 the overall control unit 140 determines whether a predetermined time Tmax (a pre-set time) has elapsed since the light emission signal was emitted. If the predetermined time Tmax has elapsed, the process proceeds to step S1209; if not, the process proceeds to step S1206.
- the predetermined time Tmax is the time corresponding to the longest distance measurement distance.
- step S1206 the overall control unit 140 determines whether the output signal of the pixel in the row corresponding to row counter j (the pixel with row number j or j+1) is "1.” If the pixel output signal is "1,” proceed to step S1207; if not, proceed to step S1205.
- step S1207 the overall control unit 140 controls the TDC 501 connected to the pixel that detected the pixel output signal "1" in step S1206, and measures the time from when the light emission signal is emitted until the pixel output signal "1" is detected in step S1206.
- step S1208 the overall control unit 140 controls the histogram circuit connected to the TDC used in step S1207 to update the light detection histogram of that histogram circuit.
- the frequency of the category corresponding to the time measured in step S1207 increases by 1. Then, proceed to step S1205.
- steps S1204 to S1208 (the processing of step S1216) is performed separately for each combination of light receiving element, TDC, and histogram circuit.
- step S1209 the overall control unit 140 increments the value of the light emission count counter i by 1.
- step S1210 the overall control unit 140 determines whether the value of the light emission counter i is greater than or equal to a predetermined number of lights N total (a number of lights set in advance). If the value of the light emission counter i is greater than the number of lights N total , the process proceeds to step S1211; if not, the process proceeds to step S1204.
- step S1211 the overall control unit 140 uses the obtained light detection histogram to perform histogram processing to calculate ranging results such as ranging distance, signal strength, and ambient light intensity.
- step S1213 the overall control unit 140 acquires the distance measurement results obtained in steps S1211 and S1212 from the measurement unit 120.
- Steps S1202 to S1213 complete distance measurement for one line.
- step S1214 the overall control unit 140 increments the value of row counter j by 1.
- the above distance measurement operation allows for obtaining distance measurement results in a two-dimensional array similar to image information.
- FIG. 13 is a schematic diagram showing reference light histogram 1301, which is a light detection histogram obtained from the reference light, and object reflected light histogram 1302, which is a light detection histogram obtained from the object reflected light.
- Timing 1303 is the timing (time) at which an emission signal is emitted from the overall control unit 140. From the peak of reference light histogram 1301, reference light peak time 1304, which is the time from when the emission signal is emitted to when the reference light is detected, is obtained.
- reference light peak time 1304 may also be interpreted as the time from when the emission signal is emitted to when the reference light is emitted. Furthermore, object reflected light peak time 1305, which is the time from when the emission signal is emitted to when the object reflected light is detected, is obtained from the peak of object reflected light histogram 1302. Reference light peak time 1304 is subtracted from object reflected light peak time 1305 obtained in this manner.
- time of flight TOF that is free from the influence of individual variations and temperature characteristics of the light-emitting element driver 112, light-emitting element, light-receiving element, TDC array 122, buffers used for signal transmission, etc.
- a beam splitter having a half mirror and a reflective surface is used.
- Light emitted from the light-emitting element is split into two beams by the half mirror; one is detected as object-reflected light reflected by the object, and the other is detected as reference light reflected by the reflective surface of the beam splitter.
- the time taken for the reference light to be detected (to be incident on the light-receiving element) is then subtracted from the time taken for the object-reflected light to be detected (to be incident on the light-receiving element).
- This enables highly accurate distance measurement.
- the optical system for receiving the object-reflected light and the optical system for receiving the reference light are the same, a compact distance measuring device can be provided.
- the reference light signal and the object reflected light signal are accumulated as a histogram for a set number of times N total of light emissions, and then subtraction processing is performed.
- the reference light signal is subtracted from the object reflected light signal for each emission, and histogram processing is performed using the subtraction result to obtain the distance.
- FIG. 14 is a flowchart showing an example of distance measurement operation according to this modified example. Similar to embodiment 1, steps S1201 to S1207 are performed.
- step S1408 the overall control unit 140 stores the time obtained in step S1207 in the RAM (primary memory) of the overall control unit 140.
- steps S1204 to S1207 and S1408 are performed individually for each combination of light receiving element, TDC, and histogram circuit.
- step S1412 the overall control unit 140 reads from RAM the object-reflected light signal obtained using the pixels of row number j and the reference light signal obtained using the pixels of row number j+1, and subtracts the read reference light signal from the read object-reflected light signal.
- the overall control unit 140 then reflects the subtraction results in the light detection histogram.
- multiple combinations of object-reflected light signals and reference light signals are read, and multiple subtraction results obtained from each of the multiple combinations are reflected in the light detection histogram.
- the process of reflecting the subtraction results in the light detection histogram is, for example, a process of increasing by 1 the frequency of the category corresponding to the time obtained by the subtraction.
- steps S1209 to S1211 and S1213 to S1215 described in embodiment 1 are performed.
- This modified example achieves the same effects as embodiment 1. Furthermore, because subtraction processing is performed for each light emission, highly accurate results can be obtained as measurement results for each light emission.
- the reference light is incident on a light-receiving element that is conjugate with the light-emitting element that is adjacent in the column direction to the light-emitting element that emitted the light.
- both the object-reflected light and the reference light are incident on a light-receiving element that is conjugate with the light-emitting element that emitted the light that is the source of the light.
- the object-reflected light and the reference light are incident on the same light-receiving element (pixel).
- Figure 15A is a schematic diagram showing cross sections of the beam splitter 150, light-emitting element array 111, light-receiving element array 121, and imaging lens 130.
- Figure 15B is a schematic diagram showing the optical path of light emitted from the light-emitting element in row number 1 in the light-emitting element array 111.
- Light 1510 emitted from the light-emitting element is split into light 1511 that is reflected by the half mirror 151 and irradiated onto the object, and light 1512 that passes through the half mirror 151 and heads toward the reflecting surface 152.
- Figure 15C is a schematic diagram showing reflected light (reference light) 1513 obtained when light 1512 is reflected by reflecting surface 152
- Figure 15D is a schematic diagram showing reflected light (object-reflected light) 1514 obtained when light 1511 is reflected by an object.
- Object-reflected light 1514 is incident on a light-receiving element that is conjugate with the light-emitting element in row number 1 that emitted light 1510.
- reference light 1113 also enters a light-receiving element that is conjugate with the light-emitting element in row number 1.
- step S1202 only the signal from the pixel with row number j is set to be output to the TDC array 122 via the pixel output line 304.
- Figure 16 is a schematic diagram showing a light detection histogram obtained from a pixel that is conjugate with the light-emitting pixel that emitted light.
- Timing 1603 is the timing (time) at which an emission signal was emitted from the overall control unit 140.
- the light detection histogram in Figure 16 shows two peaks 1601 and 1602.
- the earlier peak 1601 is a reference light peak indicating the timing at which the reference light was detected
- the later peak 1602 is an object reflected light peak indicating the timing at which the object reflected light was detected.
- a reference light peak time 1604 is obtained, which is the time from when the emission signal is emitted to when the reference light is detected.
- an object reflected light peak time 1605 is obtained, which is the time from when the emission signal is emitted to when the object reflected light is detected.
- the reference light peak time 1604 is subtracted from the object reflected light peak time 1605 obtained in this manner.
- the ranging operation according to this modified example is the same as the ranging operation according to the modified example of embodiment 1 ( Figure 14).
- step S1202 as in embodiment 2, only the signal from the pixel with row number j is set to be output to the TDC array 122 via the pixel output line 304.
- step S1412 of the multiple times stored in RAM in step S1408, the shortest time is used as the reference light signal, and the others are used as the object-reflected light signal.
- This modified example provides the same effects as embodiment 2. Furthermore, as with the modified example of embodiment 1, subtraction processing is performed for each light emission, making it possible to obtain highly accurate results as measurement results for each light emission.
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Abstract
Description
本発明は、測距装置に関する。 The present invention relates to a distance measuring device.
発光素子が光を発してから反射光が検出されるまでの時間を計測することで、物体までの距離を計測する、TOF(Time-Of-Flight)方式の測距方法が知られている。 A known distance measurement method is the TOF (Time-Of-Flight) method, which measures the distance to an object by measuring the time between when a light-emitting element emits light and when the reflected light is detected.
特許文献1には、複数の発光素子と複数の受光素子とをそれぞれ2次元アレイ状に配置し、結像レンズを介して物体に光を照射し、結像レンズを介して反射光を受光することで、駆動部なしで3次元距離情報を取得する構成が開示されている。このような構成では、発光の画角と受光の画角を概ね等しくする必要がある。そして、測距装置の小型化のためには、発光素子アレイのサイズと受光素子アレイのサイズを概ね等しくし、発光素子アレイの結像レンズと受光素子アレイの結像レンズとを共通化することが望ましい。 Patent Document 1 discloses a configuration in which multiple light-emitting elements and multiple light-receiving elements are arranged in a two-dimensional array, light is irradiated onto an object via an imaging lens, and the reflected light is received via the imaging lens, thereby obtaining three-dimensional distance information without a drive unit. In such a configuration, the angle of view of the light emitted and the angle of view of the light received must be roughly equal. Furthermore, in order to miniaturize the distance measuring device, it is desirable to make the size of the light-emitting element array and the size of the light-receiving element array roughly equal and to use a common imaging lens for the light-emitting element array and the light-receiving element array.
特許文献2には、レーザーの発光タイミングに対応する参照光と、物体で反射した反射光の時間差を算出することで、測距精度を向上する構成が開示されている。 Patent document 2 discloses a configuration that improves distance measurement accuracy by calculating the time difference between a reference light corresponding to the laser emission timing and the light reflected by an object.
しかしながら、特許文献2に開示の構成では、反射光を受光するための光学系とは別に、参照光を受光するための光学系を設ける必要があり、測距装置が大型化してしまう。 However, the configuration disclosed in Patent Document 2 requires the provision of an optical system for receiving the reference light in addition to the optical system for receiving the reflected light, which results in an increase in the size of the distance measuring device.
本発明は、高精度な測距が可能な小型の測距装置を提供することを目的とする。 The object of the present invention is to provide a compact distance measuring device capable of highly accurate distance measurement.
本発明の測距装置は、複数の発光素子を含む発光素子アレイと、複数の受光素子を含む受光素子アレイと、時間を計測する計時部と、ハーフミラーと反射面を有するビームスプリッタと、前記計時部によって計測された時間に基づいて、物体までの距離を計測する測距部とを有し、前記発光素子から発せられた光は、前記ハーフミラーによって第1の光と第2の光とに分けられ、前記第1の光は、前記物体で反射して前記複数の受光素子のいずれかに入射し、前記第2の光は、前記反射面で反射して前記複数の受光素子のいずれかに入射し、前記測距部は、前記第1の光が前記物体で反射して前記複数の受光素子のいずれかに入射するまでの時間から、前記第2の光が前記反射面で反射して前記複数の受光素子のいずれかに入射するまでの時間を減算して得られる時間に基づいて、前記物体までの距離を計測することを特徴とする。 The distance measuring device of the present invention comprises a light-emitting element array including a plurality of light-emitting elements, a light-receiving element array including a plurality of light-receiving elements, a timer for measuring time, a beam splitter having a half mirror and a reflecting surface, and a distance measuring unit for measuring the distance to an object based on the time measured by the timer, wherein light emitted from the light-emitting element is split into a first light and a second light by the half mirror, the first light is reflected by the object and incident on one of the plurality of light-receiving elements, and the second light is reflected by the reflecting surface and incident on one of the plurality of light-receiving elements, and the distance measuring unit measures the distance to the object based on the time obtained by subtracting the time taken for the second light to be reflected by the reflecting surface and incident on one of the plurality of light-receiving elements from the time taken for the first light to be reflected by the object and incident on one of the plurality of light-receiving elements.
本発明によれば、高精度な測距が可能な小型の測距装置を提供することができる。 The present invention makes it possible to provide a compact distance measuring device capable of highly accurate distance measurement.
<実施形態1>
本発明の実施形態1について説明する。
<Embodiment 1>
A first embodiment of the present invention will be described.
[測距装置]
図1は、実施形態1に係る測距装置の構成例を概略的に示すブロック図である。ブロック(構成要素)同士を接続する実線の矢印は信号のやり取りを示し、破線の矢印は物体に照射する照射光、一点鎖線の矢印は物体からの反射光を示す。
[Distance measuring device]
1 is a block diagram illustrating an example of the configuration of a distance measuring device according to embodiment 1. Solid arrows connecting blocks (components) indicate signal exchange, dashed arrows indicate light irradiated onto an object, and dashed arrows indicate light reflected from the object.
測距装置は、発光ユニット110、計測ユニット120、結像レンズ130、全体制御部140、およびビームスプリッタ150を有する。 The distance measuring device has a light emitting unit 110, a measurement unit 120, an imaging lens 130, an overall control unit 140, and a beam splitter 150.
発光ユニット110は、光源ユニット113と光源制御部114を有する。光源ユニット113は、複数の発光素子を含む発光素子アレイ111と、光源制御部114からの指示に従って各発光素子を駆動する発光素子駆動部112とを有する。実施形態1では、複数の発光素子が2次元アレイ状(マトリクス状)に配置されており、光源制御部114(発光制御部)は、各行の発光素子を個別に発光させる。 The light-emitting unit 110 has a light source unit 113 and a light source control unit 114. The light source unit 113 has a light-emitting element array 111 including multiple light-emitting elements, and a light-emitting element drive unit 112 that drives each light-emitting element in accordance with instructions from the light source control unit 114. In embodiment 1, multiple light-emitting elements are arranged in a two-dimensional array (matrix), and the light source control unit 114 (light-emitting control unit) causes each row of light-emitting elements to emit light individually.
計測ユニット120は、受光素子アレイ121、TDC(Time-to-Digital Convertor)アレイ122、信号処理部123、計測制御部124、および行選択回路125を有する。受光素子アレイ121は、複数の受光素子を含む。実施形態1では、複数の受光素子が2次元アレイ状(マトリクス状)に配置されているとする。TDCアレイ122は、時間を計測する計時部である。信号処理部123は、所定の信号処理を行って距離を計測する測距部である。計測制御部124は、計測ユニット120の動作を制御する。行選択回路125は、受光を行う受光素子(有効にする受光素子)の行を選択する。なお、発光素子アレイ111から発せられる光の波長を含む波長の光を透過し、他の波長の光を反射または吸収するバンドパスフィルタを、受光素子アレイ121上に配置してもよい。 The measurement unit 120 has a light receiving element array 121, a TDC (Time-to-Digital Converter) array 122, a signal processing unit 123, a measurement control unit 124, and a row selection circuit 125. The light receiving element array 121 includes multiple light receiving elements. In embodiment 1, the multiple light receiving elements are arranged in a two-dimensional array (matrix). The TDC array 122 is a timing unit that measures time. The signal processing unit 123 is a distance measurement unit that performs predetermined signal processing to measure distance. The measurement control unit 124 controls the operation of the measurement unit 120. The row selection circuit 125 selects the row of light receiving elements that will receive light (light receiving elements to be enabled). Note that a bandpass filter that transmits light of wavelengths including the wavelength of the light emitted from the light emitting element array 111 and reflects or absorbs light of other wavelengths may be placed on the light receiving element array 121.
ビームスプリッタ150は、光の一部を透過し且つ一部を反射するハーフミラー151と、光を反射する反射面152とを有する。 Beam splitter 150 has a half mirror 151 that transmits part of the light and reflects part of it, and a reflective surface 152 that reflects the light.
全体制御部140は、測距装置全体の動作を制御する。例えば、全体制御部140はCPU、ROM、およびRAMを有し、CPUがROMに格納されたプログラムをRAMに展開して実行することにより、測距装置の各部を制御する。全体制御部140の少なくとも一部は専用のハードウェア回路で実現されてもよい。 The overall control unit 140 controls the operation of the entire distance measuring device. For example, the overall control unit 140 has a CPU, ROM, and RAM, and the CPU controls each part of the distance measuring device by expanding a program stored in the ROM into the RAM and executing it. At least a portion of the overall control unit 140 may be realized by a dedicated hardware circuit.
各発光素子がパルス発光することで、結像レンズ130を介して空間にパルス光が出力される。異なる発光素子から発せられたパルス光は空間の異なる画角(範囲)に出力される。出力された光(照射光)の一部は物体で反射され、反射光として、結像レンズ130を介して受光素子アレイ121に入射する。発光素子が照射光を発してから受光素子アレイ121が反射光を受光するまでの時間が飛行時間TOF(Time Of Flight)であり、この時間がTDCアレイ122によって計測される。 When each light-emitting element emits a pulse of light, it is output into space via the imaging lens 130. The pulse of light emitted from different light-emitting elements is output to different angles of view (ranges) in space. A portion of the output light (illumination light) is reflected by the object and enters the light-receiving element array 121 via the imaging lens 130 as reflected light. The time from when the light-emitting element emits illumination light to when the light-receiving element array 121 receives the reflected light is the time of flight (TOF), and this time is measured by the TDC array 122.
しかし、1回の計測では、環境光やダークカウントによるノイズ、計測に用いる各回路のノイズ、発光信号(発光素子を発光させるための駆動信号)が発せられてから実際に発光素子が発光するまでの時間によるノイズなどが計測結果に及ぼす影響が大きい。つまり、1回の計測では、これらノイズによる計測誤差が大きい。そのため、TDCアレイ122は、飛行時間TOFを複数回計測し、信号処理部123は、複数回の計測結果のヒストグラムを作成し、当該ヒストグラムに基づいて、ノイズの除去(例えば複数回の計測結果の平均化)を行う。 However, with a single measurement, noise due to ambient light and dark counts, noise from each circuit used in the measurement, and noise due to the time between when the light emission signal (the drive signal for emitting light from the light-emitting element) is emitted and when the light-emitting element actually emits light have a significant impact on the measurement results. In other words, with a single measurement, the measurement error due to these noises is large. For this reason, the TDC array 122 measures the time of flight TOF multiple times, and the signal processing unit 123 creates a histogram of the results of the multiple measurements and removes noise based on the histogram (for example, averaging the results of the multiple measurements).
また、発光信号が発せられてから発光素子が発光するまでの時間は、発光素子駆動部112、発光素子、受光素子、TDCアレイ122、信号伝達に用いるバッファなどの個体ばらつきや温度特性などによってばらつく。そこで、詳細は後述するが、実施形態1では、発光素子から発せられた光を照射光と参照光に分け、参照光が検出されるまでの時間を物体からの反射光が検出されるまでの時間から減算した時間を、飛行時間TOFとして取得する。こうすることによって、発光信号が発せられてから発光素子が発光するまでの時間の成分が少ない飛行時間TOFを得ることができる。 Furthermore, the time from when the light emission signal is emitted until the light emitting element emits light varies due to individual variations and temperature characteristics of the light emitting element drive unit 112, light emitting element, light receiving element, TDC array 122, buffer used for signal transmission, etc. Therefore, as will be described in detail below, in embodiment 1, the light emitted from the light emitting element is separated into illumination light and reference light, and the time until the reference light is detected is subtracted from the time until the reflected light from the object is detected to obtain the time of flight TOF. By doing this, it is possible to obtain a time of flight TOF that has a small component of the time from when the light emission signal is emitted until the light emitting element emits light.
信号処理部123は、得られた飛行時間TOFを以下の式(1)に代入して、測距装置から物体までの距離Lを計測(算出)する。なお、cは光の速度である。
L=TOF×c/2 ・・・(1)
The signal processing unit 123 measures (calculates) the distance L from the distance measuring device to the object by substituting the obtained time of flight TOF into the following equation (1), where c is the speed of light.
L=TOF×c/2...(1)
[発光ユニット]
図2を用いて、発光ユニット110の構成例について説明する。上述したように、発光ユニット110は、光源ユニット113と光源制御部114を有する。
[Lighting unit]
2, an example of the configuration of the light-emitting unit 110 will be described. As described above, the light-emitting unit 110 includes the light source unit 113 and the light source control unit 114.
発光素子アレイ111は、各々が垂直共振器面発光レーザー素子(Vertical Cavity Surface Emitting LASER:VCSEL)である複数の発光素子201を基板上に2次元アレイ状に配置した構成を有する。また、発光素子駆動部112は、複数の発光素子行駆動回路202を1次元状(1列)に配置した構成を有する。複数の発光素子行駆動回路202は、複数の発光素子201の複数の行にそれぞれ対応する。各発光素子行駆動回路202は、対応する行の発光素子201を駆動する。 The light-emitting element array 111 has a configuration in which multiple light-emitting elements 201, each of which is a vertical cavity surface-emitting laser element (VCSEL), are arranged in a two-dimensional array on a substrate. The light-emitting element drive unit 112 has a configuration in which multiple light-emitting element row drive circuits 202 are arranged one-dimensionally (in one column). The multiple light-emitting element row drive circuits 202 correspond to the multiple rows of the multiple light-emitting elements 201, respectively. Each light-emitting element row drive circuit 202 drives the light-emitting elements 201 in the corresponding row.
なお、発光素子201はVCSELに限られないが、1次元または2次元アレイ状に集積可能な発光素子であることが好ましく、例えば端面発光型レーザーまたはLED(発光ダイオード)であってもよい。発光素子201として端面発光型レーザーを用いる場合は、基板上に素子を1次元配列したレーザーバーを積層したレーザーバースタックを、発光素子アレイ111として用いることができる。発光素子201としてLEDを用いる場合には、基板上に2次元アレイ状にLEDを配置したLEDアレイを、発光素子アレイ111として用いることができる。 Note that the light-emitting element 201 is not limited to a VCSEL, but is preferably a light-emitting element that can be integrated in a one-dimensional or two-dimensional array, and may be, for example, an edge-emitting laser or an LED (light-emitting diode). When an edge-emitting laser is used as the light-emitting element 201, a laser bar stack in which laser bars, each having a one-dimensional array of elements, are stacked on a substrate can be used as the light-emitting element array 111. When an LED is used as the light-emitting element 201, an LED array in which LEDs are arranged in a two-dimensional array on a substrate can be used as the light-emitting element array 111.
また、発光素子201の発する光の波長は特に限定されないが、近赤外帯域の波長であれば、環境光の影響を抑制することができる。VCSELは端面発光型レーザーや面発光レーザーに用いられている材料から、半導体プロセスによって作製されることができる。GaAs系の半導体材料を主な材料として用いれば、近赤外帯域の波長の光を発するVCSELを作製することができる。この場合、VCSELを構成するDBR(分布反射型)反射鏡をなす誘電体多層膜は、屈折率の異なる材料からなる2つの薄膜を交互に周期的に積層したもの(GaAs/AlGaAs)で構成することができる。VCSELの発する光の波長は、化合物半導体の元素組み合わせや、組成を調整することで変更することができる。 Furthermore, while there are no particular limitations on the wavelength of the light emitted by the light-emitting element 201, a wavelength in the near-infrared band can suppress the effects of ambient light. VCSELs can be manufactured using semiconductor processes from materials used in edge-emitting lasers and surface-emitting lasers. If GaAs-based semiconductor materials are used as the main material, a VCSEL that emits light with a wavelength in the near-infrared band can be manufactured. In this case, the dielectric multilayer film that forms the DBR (distributed Bragg reflector) reflector that makes up the VCSEL can be constructed from two thin films made of materials with different refractive indices that are alternately and periodically stacked (GaAs/AlGaAs). The wavelength of the light emitted by the VCSEL can be changed by adjusting the element combination and composition of the compound semiconductor.
VCSELアレイ(発光素子アレイ111)を構成するVCSEL(発光素子201)には、活性層に電流とホールを注入するための電極が設けられている。電極は、複数の発光素子201の行ごとに設けられており、同じ行のVCSEL間で共有されている。複数の電極は、複数の発光素子行駆動回路202にそれぞれ接続されている。発光素子行駆動回路202を動作させることによって、当該発光素子行駆動回路202に接続された1行のVCSELにのみに電流が注入され、当該1行のVCSELのみを発光させることができる。 The VCSELs (light-emitting elements 201) that make up the VCSEL array (light-emitting element array 111) are provided with electrodes for injecting current and holes into the active layer. An electrode is provided for each row of multiple light-emitting elements 201, and is shared between the VCSELs in the same row. The multiple electrodes are respectively connected to multiple light-emitting element row drive circuits 202. By operating the light-emitting element row drive circuit 202, current is injected only into the VCSELs in one row connected to that light-emitting element row drive circuit 202, causing only the VCSELs in that row to emit light.
[計測ユニット]
図3を用いて、計測ユニット120の構成例について説明する。上述したように、計測ユニット120は、受光素子アレイ121、TDCアレイ122、信号処理部123、計測制御部124、および行選択回路125を有する。受光素子アレイ121は、2次元アレイ状に配置された複数の画素301を有する。各画素は受光素子を有する。行選択回路125は、複数の行選択線303を介して受光素子アレイ121の複数の画素301に接続されており、TDCアレイ122は、複数の画素出力線304を介して複数の画素301に接続されている。複数の行選択線303は、複数の画素301の複数の行にそれぞれ対応し、同じ行の画素301は同じ行選択線303に接続されている。複数の画素出力線304は、複数の画素301の複数の列にそれぞれ対応し、同じ列の画素301は同じ画素出力線304に接続されている。行選択回路125は、1つの行選択線303に信号(選択信号)を出力することによって、複数の画素301の1行を選択することができる。複数の画素301の1行が選択されると、TDCアレイ122では、選択された行の画素301から出力された信号のみが、画素出力線304を介して受信されるようになる。その結果、選択された行の複数の画素301(選択された行の複数の受光素子)それぞれでの受光を検出することができる。
[Measurement unit]
An example configuration of the measurement unit 120 will be described using FIG. 3 . As described above, the measurement unit 120 includes a light-receiving element array 121, a TDC array 122, a signal processing unit 123, a measurement control unit 124, and a row selection circuit 125. The light-receiving element array 121 includes a plurality of pixels 301 arranged in a two-dimensional array. Each pixel includes a light-receiving element. The row selection circuit 125 is connected to the plurality of pixels 301 of the light-receiving element array 121 via a plurality of row selection lines 303, and the TDC array 122 is connected to the plurality of pixels 301 via a plurality of pixel output lines 304. The plurality of row selection lines 303 correspond to the plurality of rows of the plurality of pixels 301, respectively, and the pixels 301 in the same row are connected to the same row selection line 303. The plurality of pixel output lines 304 correspond to the plurality of columns of the plurality of pixels 301, respectively, and the pixels 301 in the same column are connected to the same pixel output line 304. The row selection circuit 125 can select one row of the multiple pixels 301 by outputting a signal (selection signal) to one row selection line 303. When one row of the multiple pixels 301 is selected, the TDC array 122 receives only signals output from the pixels 301 in the selected row via pixel output lines 304. As a result, it is possible to detect light reception by each of the multiple pixels 301 in the selected row (multiple light receiving elements in the selected row).
図4は、画素301の構成例を示す模式図である。画素301は、受光素子であるSPAD(Single Photon Avalanche Diode)素子401、負荷トランジスタ402、インバータ403、および画素出力回路404を有する。画素出力回路404には、行選択線303と画素出力線304が接続されている。SPAD素子401は、アバランシェダイオードの1種であり、受光領域とアバランシェ領域を有する。 Figure 4 is a schematic diagram showing an example configuration of a pixel 301. The pixel 301 has a SPAD (Single Photon Avalanche Diode) element 401, which is a light-receiving element, a load transistor 402, an inverter 403, and a pixel output circuit 404. The pixel output circuit 404 is connected to the row selection line 303 and pixel output line 304. The SPAD element 401 is a type of avalanche diode, and has a light-receiving region and an avalanche region.
SPAD素子401に光が入射すると、受光領域で光電変換が行われ、電子と正孔が発生する。正電荷の正孔は、アノード電極Vbdを介して排出される。負電荷の電子は、信号電荷として、アバランシェ領域に向かってポテンシャルが低くなるように設定された電界により、アバランシェ領域に輸送される。アバランシェ領域に到達した信号電荷は、アバランシェ領域の強い電界により、アバランシェ降伏を引き起こし、アバランシェ電流を発生させる。 When light is incident on the SPAD element 401, photoelectric conversion occurs in the light-receiving region, generating electrons and holes. Positively charged holes are discharged via the anode electrode Vbd. Negatively charged electrons are transported to the avalanche region as signal charge by an electric field set so that the potential decreases toward the avalanche region. The signal charge that reaches the avalanche region causes avalanche breakdown due to the strong electric field in the avalanche region, generating an avalanche current.
アバランシェ電流が流れていないとき、SPAD素子401のアバランシェ領域には、ブレークダウン電圧以上の逆バイアスが印加されるように、アノード電極Vbdの電圧が設定されている。このとき、負荷トランジスタ402に流れる電流は無いため、カソード電位Vcは電源電圧Vddに近い電圧となっており、インバータ出力信号は「0」である。 When no avalanche current is flowing, the voltage of the anode electrode Vbd is set so that a reverse bias equal to or greater than the breakdown voltage is applied to the avalanche region of the SPAD element 401. At this time, no current flows through the load transistor 402, so the cathode potential Vc is close to the power supply voltage Vdd, and the inverter output signal is "0."
光子の到来により、SPAD素子401でアバランシェ電流が発生すると、カソード電位Vcが降下し、インバータ403の出力が反転する。すなわち、インバータ出力は「0」から「1」に変化する。以後、この動作をビルドアップ動作と呼称する。 When an avalanche current is generated in the SPAD element 401 due to the arrival of a photon, the cathode potential Vc drops and the output of the inverter 403 is inverted. In other words, the inverter output changes from "0" to "1." Hereafter, this operation is referred to as the build-up operation.
カソード電位Vcが低下すると、SPAD素子401に印加される逆バイアスが低下し、逆バイアスがブレークダウン電圧以下になった時点でアバランシェ電流の生成が停止する。以後、この動作をクエンチ動作と呼称する。 When the cathode potential Vc decreases, the reverse bias applied to the SPAD element 401 decreases, and when the reverse bias falls below the breakdown voltage, the generation of avalanche current stops. Hereafter, this operation is referred to as the quench operation.
その後、負荷トランジスタ402を介して電源電圧Vddから正孔電流が流れることによりカソード電位Vcは上昇し、インバータ出力が「1」から「0」へと戻り、光子の到来前の状態となる。以後、この動作をリチャージ動作と呼称する。 After that, hole current flows from the power supply voltage Vdd via the load transistor 402, causing the cathode potential Vc to rise, and the inverter output returns from "1" to "0," returning to the state it was in before the photon arrived. Hereafter, this operation is referred to as the recharge operation.
そして、画素出力回路404は、行選択線303から選択信号が供給されていない場合には、インバータ出力を画素出力線304に出力せず、行選択線303から選択信号が供給されている場合に、インバータ403の出力を画素出力線304に出力する。インバータ出力は、低遅延のデジタル信号として、TDCアレイ122に出力される。 The pixel output circuit 404 does not output the inverter output to the pixel output line 304 when a selection signal is not supplied from the row selection line 303, but outputs the output of the inverter 403 to the pixel output line 304 when a selection signal is supplied from the row selection line 303. The inverter output is output to the TDC array 122 as a low-delay digital signal.
このようにして、行選択回路125により選択された行の画素301(SPAD素子401)に入射した光のみを検出することができる。 In this way, it is possible to detect only the light incident on the pixels 301 (SPAD elements 401) in the row selected by the row selection circuit 125.
[TDCアレイ]
TDCアレイ122は、発光ユニット110が発光した時刻から、画素301の出力信号が「0」から「1」に変化するまでの時刻を飛行時間TOFとして計測する。
[TDC array]
The TDC array 122 measures the time from when the light-emitting unit 110 emits light until the output signal of the pixel 301 changes from "0" to "1" as the time of flight TOF.
図5は、TDCアレイ122の構成例に示すブロック図である。TDCアレイ122は、1行の画素301の数(複数の画素301の列の数)の2倍の数のTDC501を有し、2行の画素301の出力信号を受信することができる。1行の画素301の出力信号は、物体からの反射光を検出するために用いられ、もう1行の画素301の出力信号は参照光を検出するために用いられる。図3の説明として、1行の画素301の数と同じ数の画素出力線304を用いる場合の説明を行ったが、実施形態1では、1行の画素301の数の2倍の数の画素出力線304が使用される。1行の画素301の数の2倍の数の画素出力線304は、同じ数のTDC501にそれぞれ接続される。各画素301の画素出力回路404には2つの画素出力線304が接続されており、画素出力回路404は、接続された2つの画素出力線304の一方に信号(インバータ出力)を出力する。使用する画素出力線304を行間で異ならせることにより、TDCアレイ122で2行の画素301の出力信号を受信することが可能となる。 Figure 5 is a block diagram showing an example configuration of the TDC array 122. The TDC array 122 has twice the number of pixels 301 in one row (the number of columns of multiple pixels 301) in TDCs 501 and can receive output signals from two rows of pixels 301. The output signals from the pixels 301 in one row are used to detect reflected light from an object, and the output signals from the pixels 301 in the other row are used to detect reference light. In the explanation of Figure 3, we have described a case where the same number of pixel output lines 304 as the number of pixels 301 in one row are used, but in embodiment 1, twice the number of pixel output lines 304 as the number of pixels 301 in one row are used. The pixel output lines 304, which are twice the number of pixels 301 in one row, are each connected to the same number of TDCs 501. Two pixel output lines 304 are connected to the pixel output circuit 404 of each pixel 301, and the pixel output circuit 404 outputs a signal (inverter output) to one of the two connected pixel output lines 304. By using different pixel output lines 304 between rows, it becomes possible for the TDC array 122 to receive output signals from pixels 301 in two rows.
TDC501は、発振器511、発振カウント回路521、および同期クロックカウント回路531を有する。同期クロックカウント回路531のカウント結果が上位ビット、発振器511の内部信号が下位ビット、発振カウント回路521でのカウント結果が中間ビットを構成する。すなわち、同期クロックカウント回路531で大まかに計測し、発振器511の内部信号が細かく計測し、その間を発振カウント回路521で計測する構成となっている。なお、それぞれの計測ビットに冗長ビットを持たせてもよい。 TDC 501 has an oscillator 511, an oscillation count circuit 521, and a synchronous clock count circuit 531. The count result of synchronous clock count circuit 531 constitutes the upper bits, the internal signal of oscillator 511 constitutes the lower bits, and the count result of oscillation count circuit 521 constitutes the intermediate bits. In other words, the synchronous clock count circuit 531 makes rough measurements, the internal signal of oscillator 511 makes fine measurements, and the oscillation count circuit 521 measures the interval between them. Note that each measurement bit may have a redundant bit.
図6は、発振器511の模式図である。発振器511は、発振スタート/ストップ信号生成回路640、バッファ611~618、発振スイッチ630、遅延調整用電流源620を有する。バッファ611~618は、発振スイッチ630と交互に、直列かつリング状に接続されている。 Figure 6 is a schematic diagram of oscillator 511. Oscillator 511 has an oscillation start/stop signal generation circuit 640, buffers 611-618, an oscillation switch 630, and a delay adjustment current source 620. Buffers 611-618 are connected alternately with oscillation switch 630 in series and in a ring configuration.
図7は、バッファ611~618の出力信号と発振器511の内部信号の時間変化を示す表である。図7は、リセット時のバッファ611~618の出力信号と発振器511の内部信号を示す。さらに、図7は、発振スイッチ630がオンになってからバッファ1段分の遅延時間tbuffが経過するごとのバッファ611~618の出力信号と発振器511の内部信号を示す。 Fig. 7 is a table showing the time variations of the output signals of buffers 611 to 618 and the internal signal of oscillator 511. Fig. 7 shows the output signals of buffers 611 to 618 at the time of reset and the internal signal of oscillator 511. Furthermore, Fig. 7 shows the output signals of buffers 611 to 618 and the internal signal of oscillator 511 each time the delay time t buff for one buffer stage has elapsed since oscillation switch 630 was turned on.
リセット時、バッファ611~617の出力は「0」であり、バッファ618の出力は「1」である。発振スイッチ630がオンになってから、バッファ1段分の遅延時間tbuff経過後では、入出力の整合が取れていないバッファ611の出力のみが「0」から「1」へと変化する(信号が1段分進む)。入出力の整合が取れているバッファ612~618の出力は変化しない。 At reset, the outputs of buffers 611 to 617 are "0" and the output of buffer 618 is "1". After the delay time t buff for one buffer stage has elapsed since oscillation switch 630 was turned on, only the output of buffer 611, whose input and output are not matched, changes from "0" to "1" (the signal advances by one stage). The outputs of buffers 612 to 618, whose input and output are matched, do not change.
さらにバッファ1段分の遅延時間tbuff経過後(2×tbuff経過後)には、入出力の整合が取れていないバッファ612の出力のみが「0」から「1」へと変化する(信号がさらに1段分進む)。入出力の整合が取れているバッファ611とバッファ613~618の出力は変化しない。 After a delay time t buff for one buffer stage has elapsed (2×t buff has elapsed), only the output of buffer 612, whose input and output are not matched, changes from “0” to “1” (the signal advances by another stage). The outputs of buffer 611 and buffers 613 to 618, whose input and output are matched, do not change.
このように、バッファ1段分の遅延時間tbuffが経過するごとに、入出力の整合が取れていない1つのバッファの出力が順に「0」から「1」に変化していく。発振スイッチ630がオンになってから、8×tbuff経過後には、全てのバッファの出力が「1」に変化(信号が1周)し、16×tbuff後には、全てのバッファが「0」に変化(信号が2周)して、元の状態に戻る。 In this way, each time the delay time t buff for one buffer stage elapses, the output of one buffer with mismatched input and output changes sequentially from "0" to "1." After 8×t buff has elapsed since the oscillation switch 630 was turned on, the outputs of all buffers change to "1" (the signal goes around once), and after 16×t buff , all buffers change to "0" (the signal goes around twice), returning to the original state.
その後は、16×tbuufを1周期として同様に出力が変化する。このように、tbuffの時間分解能で時間計測が行われる。この時間分解能tbuffは、後述の発振調整回路541により、同期クロックの1/27になるように調整されている。 Thereafter, the output changes in the same manner, with 16×t buuf being one cycle. In this way, time is measured with a time resolution of t buff . This time resolution t buff is adjusted by the oscillation adjustment circuit 541, which will be described later, to be 1/27 of the synchronous clock.
また、バッファ618の出力である発振器出力は、発振カウント回路521に入力される。発振カウント回路521では、発振器出力の立ち上がりエッジをカウントすることで、16×tbuffの時間分解能で時間計測が行われる。 The oscillator output, which is the output of the buffer 618, is input to an oscillation count circuit 521. The oscillation count circuit 521 counts the rising edges of the oscillator output to measure time with a time resolution of 16×t buff .
図8は、発光素子アレイ111の特定の行に属す発光素子が発光してから、SPAD素子401が光を受光し、TDC501のカウント動作が終了するまでのタイミングチャートである。SPAD素子1401のカソード電位Vc、画素出力信号、同期クロック、同期クロックカウント回路531のカウント値、発振スタート/ストップ信号生成回路出力、発振器出力、発振カウント回路521のカウント値の変化を示している。 Figure 8 is a timing chart from when a light-emitting element belonging to a specific row of the light-emitting element array 111 emits light, until the SPAD element 401 receives the light, and the counting operation of the TDC 501 ends. It shows changes in the cathode potential Vc of the SPAD element 1401, the pixel output signal, the synchronous clock, the count value of the synchronous clock count circuit 531, the output of the oscillation start/stop signal generation circuit, the oscillator output, and the count value of the oscillation count circuit 521.
SPAD素子401のカソード電位Vcはアナログ電圧であり、紙面上側が高い電圧を示している。同期クロックと発振スタート/ストップ信号生成回路出力、発振器出力はデジタル信号であり、紙面上側がオン、紙面下側がオフの状態を示している。同期クロックカウント回路531および発振カウント回路521のカウント値は、デジタル値であり、10進数の数値で示している。 The cathode potential Vc of the SPAD element 401 is an analog voltage, with the upper side of the page indicating a higher voltage. The synchronous clock, oscillation start/stop signal generation circuit output, and oscillator output are digital signals, with the upper side of the page indicating an on state and the lower side indicating an off state. The count values of the synchronous clock count circuit 531 and oscillation count circuit 521 are digital values and are shown as decimal numbers.
図9は、図8の時刻803から時刻805における発振スタート/ストップ信号生成回路出力、発振器出力、発振カウント回路521のカウント値、発振器内部信号を拡大した図である。発振器内部信号はデジタル値であり、10進数の数値で示している。 Figure 9 is an enlarged view of the oscillation start/stop signal generation circuit output, oscillator output, count value of oscillation count circuit 521, and oscillator internal signal from time 803 to time 805 in Figure 8. The oscillator internal signal is a digital value and is shown as a decimal number.
図8、図9を用いて、発光素子アレイ111の特定の行に属す発光素子が発光する時刻801から、画素301のSPAD素子401に光子が入射して画素出力信号が0から1になる時刻803までの時間を、TDC501で計測する動作を説明する。 Using Figures 8 and 9, we will explain how the TDC 501 measures the time from time 801 when a light-emitting element belonging to a specific row of the light-emitting element array 111 emits light to time 803 when a photon is incident on the SPAD element 401 of the pixel 301 and the pixel output signal changes from 0 to 1.
全体制御部140を介して供給される同期クロックの立ち上がりに同期した時刻801に、発光信号が全体制御部140から発光ユニット110に送られる。同期クロックカウント回路531では、発光信号が送られた時刻801から、同期クロックの立ち上がりエッジのカウントを開始する。 At time 801, which is synchronized with the rising edge of the synchronization clock supplied via the overall control unit 140, a light emission signal is sent from the overall control unit 140 to the light emission unit 110. The synchronization clock count circuit 531 begins counting the rising edges of the synchronization clock from time 801, when the light emission signal is sent.
時刻803で、物体で反射した光子が、画素301のSPAD素子401で受光されて、SPAD素子401のカソード電位Vcが降下し、画素出力信号は「0」から「1」に変化する。画素出力信号が「1」になると、発振スタート/ストップ信号生成回路640の出力が「0」から「1」に変化し、発振スイッチ630がオンになる。 At time 803, photons reflected from an object are received by the SPAD element 401 of pixel 301, causing the cathode potential Vc of the SPAD element 401 to drop and the pixel output signal to change from "0" to "1." When the pixel output signal becomes "1," the output of the oscillation start/stop signal generation circuit 640 changes from "0" to "1," turning on the oscillation switch 630.
発振スイッチ630がオンになると、発振動作が開始され、図9に示したように発振器511の内部で信号のループが開始される。発振器511内で信号が2周するごとに、発振器出力に立ち上がりエッジが出現し、発振カウント回路521がその数を計測する。また、時刻803で、同期クロックカウント回路531はカウントを停止し、カウント値を保持する。 When the oscillation switch 630 is turned on, oscillation begins, and a signal loop begins inside the oscillator 511 as shown in Figure 9. Every time the signal makes two cycles inside the oscillator 511, a rising edge appears in the oscillator output, and the oscillation count circuit 521 counts the number of such edges. Also, at time 803, the synchronous clock count circuit 531 stops counting and retains the count value.
時刻805は、発振器511がオンになる時刻803の後、同期クロックが最初に立ち上がるタイミングである。時刻805において、同期クロックが立ち上がると、発振スタート/ストップ信号生成回路640の出力は「0」となり、発振スイッチ630はオフになる。発振スタート/ストップ信号生成回路640の出力が「0」になったタイミング(発振スイッチ630がオフになったタイミング)で、発振が終了し、発振器内部信号はそのまま保持される。また、発振が終了するため、発振カウント回路521のカウントも停止する。 Time 805 is the timing when the synchronous clock first rises after time 803 when the oscillator 511 turns on. When the synchronous clock rises at time 805, the output of the oscillation start/stop signal generation circuit 640 becomes "0" and the oscillation switch 630 turns off. When the output of the oscillation start/stop signal generation circuit 640 becomes "0" (when the oscillation switch 630 turns off), oscillation ends and the oscillator internal signal is held as is. Also, because oscillation ends, the oscillation count circuit 521 also stops counting.
このようにすることで、同期クロックカウント回路531のカウント結果DGclkは、時刻801から時刻802までの時間を27×tbuff単位で計測した値となる。また、発振カウント回路521のカウント結果DROclkは、時刻803から時刻804までの時間を24×tbuff単位で計測した値となる。さらに、発振器内部信号DROinは時刻804から時刻805までの時間をtbuff単位で計測した値となる。TDC501は、これらの値に対して以下の処理を行い、処理後の値を信号処理部123に出力することにより、1回の計測動作を完了する。 In this way, the count result D Gclk of the synchronous clock count circuit 531 is a value obtained by measuring the time from time 801 to time 802 in units of 2 7 ×t buff . Furthermore, the count result D ROclk of the oscillation count circuit 521 is a value obtained by measuring the time from time 803 to time 804 in units of 2 4 ×t buff . Furthermore, the oscillator internal signal D ROin is a value obtained by measuring the time from time 804 to time 805 in units of t buff . The TDC 501 performs the following processing on these values and outputs the processed values to the signal processing unit 123, thereby completing one measurement operation.
発振カウント回路521のカウント結果DROclkと発振器内部信号DROinとを以下の式(2)に従って加算する。
DRO=24×DROclk+DROin ・・・(2)
The count result D_ROclk of the oscillation count circuit 521 and the oscillator internal signal D_ROin are added together according to the following equation (2).
D RO = 2 4 × D ROclk + D ROin (2)
式(2)で得られるDROは、時刻803から時刻805までの時間をtbuff単位で計測した値である。また、時刻802から時刻805までの時間は同期クロックの1周期に等しいため、27×tbuffである。そのため、以下の式(3)のように、同期クロックの1周期からDROを減算して、得られた値にDGclkを加算することで、光の飛行時間(時刻801から時刻803までの時間)をtbuff単位で計測した値DToFが得られる。
DToF=27×DGclk+(27-DRO)
=27×DGclk+(27-24×DROclk-DROin) ・・・(3)
D RO obtained by equation (2) is a value obtained by measuring the time from time 803 to time 805 in units of t buff . Furthermore, the time from time 802 to time 805 is equal to one cycle of the synchronous clock, and is therefore 2 7 ×t buff . Therefore, as shown in equation (3) below, by subtracting D RO from one cycle of the synchronous clock and adding D Gclk to the obtained value, the value D ToF obtained by measuring the time of flight of light (the time from time 801 to time 803) in units of t buff can be obtained.
D ToF = 2 7 × D Gclk + (2 7 - D RO )
=2 7 × D Gclk + (2 7 -24 × D ROclk - D ROin ) ... (3)
バッファ1段分の遅延時間tbuffは、トランジスタの製造誤差などの製造プロセスに起因する要因や、TDC回路に印加される電圧のゆれ、温度によってばらつくため、発振調整回路541が設けられている。 The delay time t buff for one buffer stage varies due to factors arising from the manufacturing process such as transistor manufacturing errors, fluctuations in the voltage applied to the TDC circuit, and temperature, so an oscillation adjustment circuit 541 is provided.
図10は、発振調整回路541の構成例を示すブロック図である。発振調整回路541は、ダミー発振器1001、1/23(1/8)分周器1002、および位相比較器1003を有する。ダミー発振器1001は、TDC501に搭載されている発振器511と同じ構成の発振器である。 10 is a block diagram showing an example of the configuration of the oscillation adjustment circuit 541. The oscillation adjustment circuit 541 has a dummy oscillator 1001, a ½ 3 (⅛) frequency divider 1002, and a phase comparator 1003. The dummy oscillator 1001 has the same configuration as the oscillator 511 mounted in the TDC 501.
ダミー発振器1001の出力は1/23分周器1002に入力される。1/23分周器1002は、入力されたクロック信号の周波数を1/23にしたクロック信号を出力する。位相比較器1003には同期クロックと1/23分周器1002の出力が入力される。位相比較器1003は、同期クロックの周波数と1/23分周器1002の出力するクロック信号の周波数とを比較する。そして、位相比較器1003は、同期クロックの周波数の方が高い場合には出力電圧を上昇させ、同期クロックの周波数の方が低い場合には出力電圧を降下させる。位相比較器1003の出力電圧が、調整電圧として、発振器511の遅延調整用電流源620に入力されることで、発振器511の発振周波数が同期クロックの23倍となるように遅延が調整される。 The output of dummy oscillator 1001 is input to 1/2/3 frequency divider 1002. 1/2/3 frequency divider 1002 outputs a clock signal obtained by dividing the frequency of the input clock signal by 2/3 . The synchronous clock and the output of 1/2/3 frequency divider 1002 are input to phase comparator 1003. Phase comparator 1003 compares the frequency of the synchronous clock with the frequency of the clock signal output by 1/2/3 frequency divider 1002. Phase comparator 1003 increases the output voltage when the frequency of the synchronous clock is higher, and decreases the output voltage when the frequency of the synchronous clock is lower. The output voltage of phase comparator 1003 is input as an adjustment voltage to delay adjustment current source 620 of oscillator 511, thereby adjusting the delay so that the oscillation frequency of oscillator 511 is 2/3 times that of the synchronous clock.
このように、発振器511の周波数は、同期クロック周波数を基準に決定される。そのため、プロセス/電圧/温度の変化によらず一定の周波数を出力可能な外付けICを用いて同期クロック信号を生成することにより、プロセス/電圧/温度の変化による発振器511の発振信周波数のばらつきを抑制することができる。例えば、同期クロック信号として160MHzのクロック信号を入力することで、発振器511の発振周波数は同期クロック周波数の8倍の1.28GHzとなる。TDC501の時間分解能であるバッファ1段分の遅延時間tbuffは、48.8psとなる。 In this way, the frequency of the oscillator 511 is determined based on the synchronous clock frequency. Therefore, by generating the synchronous clock signal using an external IC that can output a constant frequency regardless of changes in process, voltage, or temperature, it is possible to suppress variations in the oscillation frequency of the oscillator 511 due to changes in process, voltage, or temperature. For example, by inputting a 160 MHz clock signal as the synchronous clock signal, the oscillation frequency of the oscillator 511 becomes 1.28 GHz, which is eight times the synchronous clock frequency. The delay time t buff for one buffer stage, which is the time resolution of the TDC 501, is 48.8 ps.
[参照光と物体反射光]
図11Aは、ビームスプリッタ150、発光素子アレイ111、受光素子アレイ121、および結像レンズ130の断面を示す模式図である。
[Reference light and object reflected light]
FIG. 11A is a schematic diagram showing cross sections of the beam splitter 150, the light-emitting element array 111, the light-receiving element array 121, and the imaging lens 130.
発光素子アレイ111は、ビームスプリッタ150のハーフミラー151を介して受光素子アレイ121と共役関係にある。そして、発光素子アレイ111が有する複数の発光素子は、ビームスプリッタ150のハーフミラー151を介して受光素子アレイ121が有する複数の受光素子とそれぞれ共役関係にある。 The light-emitting element array 111 is in a conjugate relationship with the light-receiving element array 121 via the half mirror 151 of the beam splitter 150. The multiple light-emitting elements of the light-emitting element array 111 are each in a conjugate relationship with the multiple light-receiving elements of the light-receiving element array 121 via the half mirror 151 of the beam splitter 150.
なお、図11Aでは、複数の発光素子の行数と複数の受光素子の行数とがいずれも8行であるが、これらの行数は8行に限られない。また、発光素子と受光素子が1対1で対応付けられているが、対応関係(共役関係)はこれに限られない。例えば、受光素子数が発光素子数のN倍(例えばn行×n列倍)であってもよく、各発光素子にN個(例えばn行×n列個)の受光素子が対応付けられてもよい(Nとnは1以上の整数)。 Note that in Figure 11A, the number of rows of the multiple light-emitting elements and the number of rows of the multiple light-receiving elements are both eight, but these numbers of rows are not limited to eight. Also, while the light-emitting elements and the light-receiving elements are in a one-to-one correspondence, the correspondence (conjugate relationship) is not limited to this. For example, the number of light-receiving elements may be N times the number of light-emitting elements (e.g., n rows x n columns), and each light-emitting element may be associated with N light-receiving elements (e.g., n rows x n columns) (N and n are integers greater than or equal to 1).
発光素子アレイ111の行番号は、図11A中のYvが小さい側から大きい側へ昇順になるように割り付けられており、受光素子アレイ121の行番号は、図11A中のYが小さい側から大きい側へ昇順になるように割り付けられている。そして、同じ行番号の発光素子と受光素子が互いに共役関係になっている。 The row numbers of the light-emitting element array 111 are assigned in ascending order from smaller to larger Yv in Figure 11A, and the row numbers of the light-receiving element array 121 are assigned in ascending order from smaller to larger Y in Figure 11A. Light-emitting elements and light-receiving elements with the same row number have a conjugate relationship with each other.
図11Bは、発光素子アレイ111における行番号1の発光素子から発せられた光の光路を示す模式図である。発光素子アレイ111から発せられた光1110は、ハーフミラー151で反射して物体に照射される光1111と、ハーフミラー151を透過して反射面152に向かう光1112とに分割される。 Figure 11B is a schematic diagram showing the optical path of light emitted from the light-emitting element in row number 1 in the light-emitting element array 111. Light 1110 emitted from the light-emitting element array 111 is split into light 1111 that is reflected by the half mirror 151 and irradiated onto the object, and light 1112 that passes through the half mirror 151 and heads toward the reflecting surface 152.
図11Cは、光1112が反射面152で反射して得られた反射光(参照光)1113を示す模式図であり、図11Dは、光1111が物体で反射して得られた反射光(物体反射光)1114を示す模式図である。物体反射光1114は、光1110を発した行番号1の発光素子と共役関係にある受光素子に入射する。一方で、参照光1113は、行番号1の発光素子とは異なる行の発光素子と共役関係にある受光素子に入射する。実施形態1では、一例として、参照光が、光を発した発光素子に対して列方向に隣接する発光素子と共役関係にある受光素子に入射するとする。そのため、図11Cでは、参照光1113は、行番号2の発光素子と共役関係にある受光素子に入射している。 11C is a schematic diagram showing reflected light (reference light) 1113 obtained when light 1112 is reflected by reflecting surface 152, and FIG. 11D is a schematic diagram showing reflected light (object-reflected light) 1114 obtained when light 1111 is reflected by an object. Object-reflected light 1114 is incident on a light-receiving element that is conjugate with the light-emitting element in row number 1 that emitted light 1110. On the other hand, reference light 1113 is incident on a light-receiving element that is conjugate with a light-emitting element in a different row from the light-emitting element in row number 1. In embodiment 1, as an example, the reference light is incident on a light-receiving element that is conjugate with a light-emitting element that is adjacent in the column direction to the light-emitting element that emitted the light. Therefore, in FIG. 11C, the reference light 1113 is incident on a light-receiving element that is conjugate with the light-emitting element in row number 2.
反射面152は、発光素子アレイ111から発せられる光の波長の反射率が低くなるように、当該光における一部の波長範囲の光の透過、吸収、またはそれら両方を行う。例えば、反射面152は、屈折率の異なる誘電体の層を含む多層膜によって形成されていてもよいし、金属などの吸収材を含んでもよい。 The reflective surface 152 transmits, absorbs, or both transmits, light within a certain wavelength range of the light emitted from the light-emitting element array 111 so as to reduce the reflectance of that wavelength. For example, the reflective surface 152 may be formed from a multilayer film including dielectric layers with different refractive indices, or may include an absorbing material such as a metal.
複数の発光素子(および複数の受光素子)は、等間隔で配置されている。反射面152は、発光素子アレイ111と対向しており、列方向(紙面奥行き方向)において平坦であり、行方向(Yv方向)において各々が複数の発光素子の間隔の2倍の幅を有する連続した複数の凹部を有する。図11A~11Dでは、凹部が2つの平面によって形成されているが、これに限られない。例えば、凹部は、曲面によって形成されていてもよい。凹部は、シリンダーレンズの曲面のような形状を有していてもよい。このような形状および配置を有する反射面152を用いることによって、参照光1113は、発光素子から発せられた光1110に対して1行分ずれてハーフミラー151に入射し、発光した発光素子の隣の発光素子と共役の関係にある受光素子に入射する。 The multiple light-emitting elements (and multiple light-receiving elements) are arranged at equal intervals. The reflecting surface 152 faces the light-emitting element array 111, is flat in the column direction (depth direction in the paper), and has multiple continuous recesses in the row direction (Yv direction), each with a width twice the spacing between the multiple light-emitting elements. In Figures 11A to 11D, the recesses are formed by two flat surfaces, but this is not limited to this. For example, the recesses may be formed by curved surfaces. The recesses may have a shape similar to the curved surface of a cylindrical lens. By using a reflecting surface 152 with such a shape and arrangement, the reference light 1113 enters the half mirror 151 shifted by one row relative to the light 1110 emitted from the light-emitting element, and enters a light-receiving element that is conjugate with the light-emitting element adjacent to the light-emitting element that emitted the light.
詳細は後述するが、実施形態1では、TDCアレイ122によって得られた物体反射光信号から参照光信号を減算する。物体反射光信号は、発光信号が発せられてから物体反射光が検出されるまでの時間を示し、参照光信号は、発光信号が発せられてから参照光が検出されるまでの時間を示す。物体反射光信号にも参照光信号にも発光信号が発せられてから発光素子が発光するまでの時間の成分が含まれている。そのため、物体反射光信号から参照光信号を減算することによって、発光信号が発せられてから発光素子が発光するまでの時間の成分が少ない飛行時間TOFを得ることができる。 As will be described in more detail below, in embodiment 1, a reference light signal is subtracted from the object reflected light signal obtained by the TDC array 122. The object reflected light signal indicates the time from when the light emission signal is emitted until the object reflected light is detected, and the reference light signal indicates the time from when the light emission signal is emitted until the reference light is detected. Both the object reflected light signal and the reference light signal contain a component of the time from when the light emission signal is emitted until the light-emitting element emits light. Therefore, by subtracting the reference light signal from the object reflected light signal, it is possible to obtain a time of flight (TOF) that contains a small component of the time from when the light emission signal is emitted until the light-emitting element emits light.
行番号1の発光素子が発光する場合を説明したが、別の行番号の発光素子が発光する場合も同様である。 The above explanation is for the case where the light-emitting element in row number 1 emits light, but the same applies when a light-emitting element in a different row number emits light.
[測距動作]
図12は、実施形態1に係る測距動作の一例を示すフローチャートである。図12を用いて3次元距離情報を取得する測距動作を説明する。図12の測距動作は、例えば、全体制御部140のCPUが、全体制御部140のROMに格納されたプログラムを全体制御部140のRAMに展開して実行することによって実現される。例えば、測距装置に対して測距の実行が指示されると、図12の測距動作が開始する。
[Distance measurement operation]
Fig. 12 is a flowchart showing an example of a distance measurement operation according to the first embodiment. The distance measurement operation for acquiring three-dimensional distance information will be described with reference to Fig. 12. The distance measurement operation in Fig. 12 is realized, for example, by the CPU of the overall control unit 140 loading a program stored in the ROM of the overall control unit 140 into the RAM of the overall control unit 140 and executing the program. For example, when an instruction to perform distance measurement is given to the distance measurement device, the distance measurement operation in Fig. 12 starts.
ステップS1201で、全体制御部140は、行カウンタjの値として1を設定する(行カウンタjのリセット)。 In step S1201, the overall control unit 140 sets the value of row counter j to 1 (resets row counter j).
ステップS1202で、全体制御部140は、行選択回路125を制御して、行カウンタjに対応した行(行番号j)を選択する。これによって、行番号jの画素の信号と行番号j+1の画素の信号とが画素出力線304を介してTDCアレイ122に出力されるように設定される。行番号jの画素は、行番号jから発せられて物体で反射した物体反射光を受光する。行番号j+1の画素は、行番号jから発せられてビームスプリッタ150の反射面152で反射した参照光を受光する。 In step S1202, the overall control unit 140 controls the row selection circuit 125 to select the row (row number j) corresponding to row counter j. This sets the signal of the pixel in row number j and the signal of the pixel in row number j+1 to be output to the TDC array 122 via the pixel output line 304. The pixel in row number j receives object-reflected light that is emitted from row number j and reflected by the object. The pixel in row number j+1 receives reference light that is emitted from row number j and reflected by the reflecting surface 152 of the beam splitter 150.
ステップS1203で、全体制御部140は、信号処理部123内にTDC501と同じ個数配置されたヒストグラム回路のリセットと、発光回数カウンタiのリセットとを行う。ヒストグラム回路のリセットにより、検出された光子の数の時間変化を示す光検出ヒストグラムがない(作られていない)状態が設定され、発光回数カウンタiのリセットにより、発光回数カウンタiに1が設定される。 In step S1203, the overall control unit 140 resets the histogram circuits, of which the same number as the TDCs 501 are arranged within the signal processing unit 123, and resets the light emission count counter i. Resetting the histogram circuits sets a state in which no light detection histogram showing the change over time in the number of detected photons is present (has not been created), and resetting the light emission count counter i sets it to 1.
ステップS1204で、全体制御部140は、行カウンタjに対応した行(行番号j)の発光素子行駆動回路202を動作させて、当該行に属す発光素子に短パルス発光を行わせる。全体制御部140は、発光ユニット110に発光信号を送ると同時に、計測ユニット120に計測開始を指示する。 In step S1204, the overall control unit 140 operates the light-emitting element row drive circuit 202 for the row (row number j) corresponding to row counter j, causing the light-emitting elements belonging to that row to emit short pulses of light. The overall control unit 140 sends a light-emitting signal to the light-emitting unit 110 and simultaneously instructs the measurement unit 120 to start measurement.
ステップS1205では、全体制御部140は、発光信号が発せられてから所定時間Tmax(事前に設定された時間)が経過したか否かを判定する。所定時間Tmaxが経過した場合はステップS1209に進み、そうでない場合はステップS1206に進む。所定時間Tmaxは、最長測距距離に対応する時間である。 In step S1205, the overall control unit 140 determines whether a predetermined time Tmax (a pre-set time) has elapsed since the light emission signal was emitted. If the predetermined time Tmax has elapsed, the process proceeds to step S1209; if not, the process proceeds to step S1206. The predetermined time Tmax is the time corresponding to the longest distance measurement distance.
ステップS1206では、全体制御部140は、行カウンタjに対応した行の画素(行番号jまたはj+1の画素)の出力信号が「1」であるか否かを判定する。画素出力信号が「1」であった場合はステップS1207に進み、そうでない場合はステップS1205に進む。 In step S1206, the overall control unit 140 determines whether the output signal of the pixel in the row corresponding to row counter j (the pixel with row number j or j+1) is "1." If the pixel output signal is "1," proceed to step S1207; if not, proceed to step S1205.
ステップS1207では、全体制御部140は、ステップS1206で画素出力信号「1」を検出した画素に接続されているTDC501を制御して、発光信号が発せられてからステップS1206で画素出力信号「1」が検出されるまでの時間を計測する。 In step S1207, the overall control unit 140 controls the TDC 501 connected to the pixel that detected the pixel output signal "1" in step S1206, and measures the time from when the light emission signal is emitted until the pixel output signal "1" is detected in step S1206.
ステップS1208では、全体制御部140は、ステップS1207で使用したTDCに接続されているヒストグラム回路を制御して、当該ヒストグラム回路の光検出ヒストグラムを更新する。光検出ヒストグラムの更新によって、例えば、ステップS1207で計測された時間に対応するカテゴリの度数が1増加する。その後、ステップS1205に進む。 In step S1208, the overall control unit 140 controls the histogram circuit connected to the TDC used in step S1207 to update the light detection histogram of that histogram circuit. By updating the light detection histogram, for example, the frequency of the category corresponding to the time measured in step S1207 increases by 1. Then, proceed to step S1205.
ステップS1204~S1208の処理(ステップS1216の処理)は、受光素子、TDC、およびヒストグラム回路の各組み合わせについて個別に行われる。 The processing of steps S1204 to S1208 (the processing of step S1216) is performed separately for each combination of light receiving element, TDC, and histogram circuit.
ステップS1209では、全体制御部140は、発光回数カウンタiの値を1増やす。 In step S1209, the overall control unit 140 increments the value of the light emission count counter i by 1.
ステップS1210では、全体制御部140は、発光回数カウンタiの値が所定の発光回数Ntotal(事前に設定された発光回数)よりも大きいか以下かを判定する。発光回数カウンタiの値が発光回数Ntotalよりも大きい場合はステップS1211に進み、そうでない場合はステップS1204に進む。 In step S1210, the overall control unit 140 determines whether the value of the light emission counter i is greater than or equal to a predetermined number of lights N total (a number of lights set in advance). If the value of the light emission counter i is greater than the number of lights N total , the process proceeds to step S1211; if not, the process proceeds to step S1204.
ステップS1211では、全体制御部140は、得られた光検出ヒストグラムを用いて、測距距離、信号強度、環境光強度などの測距結果を算出するヒストグラム処理を行う。 In step S1211, the overall control unit 140 uses the obtained light detection histogram to perform histogram processing to calculate ranging results such as ranging distance, signal strength, and ambient light intensity.
ステップS1212では、全体制御部140は、行番号jの画素を用いて得られた物体反射光信号から、行番号j+1の画素を用いて得られた参照光信号を減算する。 In step S1212, the overall control unit 140 subtracts the reference light signal obtained using the pixel with row number j+1 from the object-reflected light signal obtained using the pixel with row number j.
ステップS1213では、全体制御部140は、ステップS1211,S1212得られた測距結果を計測ユニット120から取得する。 In step S1213, the overall control unit 140 acquires the distance measurement results obtained in steps S1211 and S1212 from the measurement unit 120.
ステップS1202~S1213の処理により、1行分の測距が完了する。 Steps S1202 to S1213 complete distance measurement for one line.
ステップS1214では、全体制御部140は、行カウンタjの値を1増やす。 In step S1214, the overall control unit 140 increments the value of row counter j by 1.
ステップS1215では、全体制御部140は、行カウンタjの値が発光素子や受光素子の行数Nrow(図11A~11Dの場合、Nrow=8)よりも大きいか否かを判定する。行カウンタjの値が行数Nrowよりも大きい場合は測距動作を終了し、そうでない場合はステップS1204に進む。 In step S1215, the overall control unit 140 determines whether the value of row counter j is greater than the number of rows Nrow of light-emitting elements and light-receiving elements (Nrow = 8 in the case of Figures 11A to 11D). If the value of row counter j is greater than the number of rows Nrow, the distance measurement operation ends; if not, the process proceeds to step S1204.
以上の測距動作により、画像情報のように2次元アレイ状の測距結果を得ることができる。 The above distance measurement operation allows for obtaining distance measurement results in a two-dimensional array similar to image information.
ここで、ステップS1212での減算処理について説明する。図13は、参照光から得られる光検出ヒストグラムである参照光ヒストグラム1301と、物体反射光から得られる光検出ヒストグラムである物体反射光ヒストグラム1302とを示す模式図である。タイミング1303は、全体制御部140から発光信号が発せられたタイミング(時刻)である。参照光ヒストグラム1301のピークから、発光信号が発せられてから参照光が検出されるまでの時間である参照光ピーク時間1304が取得される。発光素子が発光してから参照光が検出されるまでの時間は非常に短いと考えられるため、参照光ピーク時間1304は、発光信号が発せられてから参照光が発光するまでの時間と解釈してもよい。また、物体反射光ヒストグラム1302のピークから、発光信号が発せられてから物体反射光が検出されるまでの時間である物体反射光ピーク時間1305が取得される。このようにして得られた物体反射光ピーク時間1305から参照光ピーク時間1304が減算される。そうすることで、発光素子駆動部112、発光素子、受光素子、TDCアレイ122、信号伝達に用いるバッファなどの個体ばらつきや温度特性などによって影響が除去された飛行時間TOFを得ることができる。 Here, the subtraction process in step S1212 will be explained. Figure 13 is a schematic diagram showing reference light histogram 1301, which is a light detection histogram obtained from the reference light, and object reflected light histogram 1302, which is a light detection histogram obtained from the object reflected light. Timing 1303 is the timing (time) at which an emission signal is emitted from the overall control unit 140. From the peak of reference light histogram 1301, reference light peak time 1304, which is the time from when the emission signal is emitted to when the reference light is detected, is obtained. Since the time from when the light-emitting element emits light to when the reference light is detected is considered to be very short, reference light peak time 1304 may also be interpreted as the time from when the emission signal is emitted to when the reference light is emitted. Furthermore, object reflected light peak time 1305, which is the time from when the emission signal is emitted to when the object reflected light is detected, is obtained from the peak of object reflected light histogram 1302. Reference light peak time 1304 is subtracted from object reflected light peak time 1305 obtained in this manner. By doing so, it is possible to obtain a time of flight TOF that is free from the influence of individual variations and temperature characteristics of the light-emitting element driver 112, light-emitting element, light-receiving element, TDC array 122, buffers used for signal transmission, etc.
以上のように、実施形態1によれば、ハーフミラーと反射面を有するビームスプリッタが使用される。発光素子から発せられた光は、ハーフミラーによって2つの光に分けられ、一方は物体で反射した物体反射光として検出され、もう一方はビームスプリッタの反射面で反射した参照光として検出される。そして、物体反射光が検出される(受光素子に入射する)までの時間から、参照光が検出される(受光素子に入射する)までの時間が減算される。こうすることによって、高精度な測距が可能となる。また、物体反射光を受光するための光学系と、参照光を受光するための光学系とが共通であるため、小型の測距装置を提供することができる。 As described above, according to embodiment 1, a beam splitter having a half mirror and a reflective surface is used. Light emitted from the light-emitting element is split into two beams by the half mirror; one is detected as object-reflected light reflected by the object, and the other is detected as reference light reflected by the reflective surface of the beam splitter. The time taken for the reference light to be detected (to be incident on the light-receiving element) is then subtracted from the time taken for the object-reflected light to be detected (to be incident on the light-receiving element). This enables highly accurate distance measurement. Furthermore, because the optical system for receiving the object-reflected light and the optical system for receiving the reference light are the same, a compact distance measuring device can be provided.
<実施形態1の変形例>
実施形態1の変形例について説明する。実施形態1では、参照光信号と物体反射光信号を、設定された発光回数Ntotal分、ヒストグラムとして蓄積した後に、減算処理が行われる。本変形例では、1回の発光ごとに、物体反射光信号から参照光信号を減算し、減算結果を用いたヒストグラム処理を行うことによって、距離を得る。以下、実施形態1と同様の部分については説明を省略し、実施形態1との差分を中心に説明する。
<Modification of the First Embodiment>
A modification of the first embodiment will be described. In the first embodiment, the reference light signal and the object reflected light signal are accumulated as a histogram for a set number of times N total of light emissions, and then subtraction processing is performed. In this modification, the reference light signal is subtracted from the object reflected light signal for each emission, and histogram processing is performed using the subtraction result to obtain the distance. Below, a description of the same parts as in the first embodiment will be omitted, and the differences from the first embodiment will be mainly described.
図14は、本変形例に係る測距動作の一例を示すフローチャートである。実施形態1と同様に、ステップS1201~ステップS1207の処理が行われる。 FIG. 14 is a flowchart showing an example of distance measurement operation according to this modified example. Similar to embodiment 1, steps S1201 to S1207 are performed.
ステップS1408では、全体制御部140は、ステップS1207で得られた時間を、全体制御部140のRAM(一次メモリ)に格納する。 In step S1408, the overall control unit 140 stores the time obtained in step S1207 in the RAM (primary memory) of the overall control unit 140.
ステップS1204~S1207,S1408の処理(ステップS1416の処理)は、受光素子、TDC、およびヒストグラム回路の各組み合わせについて個別に行われる。 The processing of steps S1204 to S1207 and S1408 (processing of step S1416) is performed individually for each combination of light receiving element, TDC, and histogram circuit.
全体制御部140は、ステップS1205で所定時間Tmaxが経過したと判定すると、ステップS1412に処理を進める。ステップS1412では、全体制御部140は、行番号jの画素を用いて得られた物体反射光信号と行番号j+1の画素を用いて得られた参照光信号とをRAMから読み出し、読み出した物体反射光信号から読み出した参照光信号を減算する。そして、全体制御部140は、減算結果を光検出ヒストグラムに反映する。ここでは、例えば、物体反射光信号と参照光信号の複数の組み合わせが読み出され、複数の組み合わせからそれぞれ得られた複数の減算結果が光検出ヒストグラムに反映される。減算結果を光検出ヒストグラムに反映する処理は、例えば、減算によって得られた時間に対応するカテゴリの度数を1増加する処理である。 If the overall control unit 140 determines in step S1205 that the predetermined time Tmax has elapsed, it proceeds to step S1412. In step S1412, the overall control unit 140 reads from RAM the object-reflected light signal obtained using the pixels of row number j and the reference light signal obtained using the pixels of row number j+1, and subtracts the read reference light signal from the read object-reflected light signal. The overall control unit 140 then reflects the subtraction results in the light detection histogram. Here, for example, multiple combinations of object-reflected light signals and reference light signals are read, and multiple subtraction results obtained from each of the multiple combinations are reflected in the light detection histogram. The process of reflecting the subtraction results in the light detection histogram is, for example, a process of increasing by 1 the frequency of the category corresponding to the time obtained by the subtraction.
その後、実施形態1で述べたステップS1209~S1211,S1213~S1215の処理が行われる。 Then, steps S1209 to S1211 and S1213 to S1215 described in embodiment 1 are performed.
本変形例によれば、実施形態1と同様の効果が得られる。さらに、1回の発光ごとに減算処理が行われるため、発光ごとの計測結果として高精度な結果を得ることができる。 This modified example achieves the same effects as embodiment 1. Furthermore, because subtraction processing is performed for each light emission, highly accurate results can be obtained as measurement results for each light emission.
<実施形態2>
本発明の実施形態2について説明する。実施形態1では、参照光が、光を発した発光素子に対して列方向に隣接する発光素子と共役関係にある受光素子に入射する。実施形態2では、物体反射光も参照光も、それらの元となる光を発した発光素子と共役関係にある受光素子に入射する。つまり、物体反射光と参照光は同じ受光素子(画素)に入射する。以下、実施形態1と同様の部分については説明を省略し、実施形態1との差分を中心に説明する。
<Embodiment 2>
A second embodiment of the present invention will now be described. In the first embodiment, the reference light is incident on a light-receiving element that is conjugate with the light-emitting element that is adjacent in the column direction to the light-emitting element that emitted the light. In the second embodiment, both the object-reflected light and the reference light are incident on a light-receiving element that is conjugate with the light-emitting element that emitted the light that is the source of the light. In other words, the object-reflected light and the reference light are incident on the same light-receiving element (pixel). In the following, a description of the same parts as in the first embodiment will be omitted, and the differences from the first embodiment will be mainly described.
図15Aは、ビームスプリッタ150、発光素子アレイ111、受光素子アレイ121、および結像レンズ130の断面を示す模式図である。 Figure 15A is a schematic diagram showing cross sections of the beam splitter 150, light-emitting element array 111, light-receiving element array 121, and imaging lens 130.
図15Bは、発光素子アレイ111における行番号1の発光素子から発せられた光の光路を示す模式図である。発光素子から発せられた光1510は、ハーフミラー151で反射して物体に照射される光1511と、ハーフミラー151を透過して反射面152に向かう光1512とに分割される。 Figure 15B is a schematic diagram showing the optical path of light emitted from the light-emitting element in row number 1 in the light-emitting element array 111. Light 1510 emitted from the light-emitting element is split into light 1511 that is reflected by the half mirror 151 and irradiated onto the object, and light 1512 that passes through the half mirror 151 and heads toward the reflecting surface 152.
図15Cは、光1512が反射面152で反射して得られた反射光(参照光)1513を示す模式図であり、図15Dは、光1511が物体で反射して得られた反射光(物体反射光)1514を示す模式図である。物体反射光1514は、光1510を発した行番号1の発光素子と共役関係にある受光素子に入射する。そして、反射面152が平坦であるため、参照光1113も、行番号1の発光素子と共役関係にある受光素子に入射する。 Figure 15C is a schematic diagram showing reflected light (reference light) 1513 obtained when light 1512 is reflected by reflecting surface 152, and Figure 15D is a schematic diagram showing reflected light (object-reflected light) 1514 obtained when light 1511 is reflected by an object. Object-reflected light 1514 is incident on a light-receiving element that is conjugate with the light-emitting element in row number 1 that emitted light 1510. And, because reflecting surface 152 is flat, reference light 1113 also enters a light-receiving element that is conjugate with the light-emitting element in row number 1.
行番号1の発光素子が発光する場合を説明したが、別の行番号の発光素子が発光する場合も同様である。 The above explanation is for the case where the light-emitting element in row number 1 emits light, but the same applies when a light-emitting element in a different row number emits light.
実施形態2に係る測距動作のフローチャートは、実施形態1(図12)と同様である。但し、ステップS1202では、行番号jの画素の信号のみが画素出力線304を介してTDCアレイ122に出力されるように設定される。 The flowchart for the distance measurement operation in embodiment 2 is the same as that in embodiment 1 (Figure 12). However, in step S1202, only the signal from the pixel with row number j is set to be output to the TDC array 122 via the pixel output line 304.
図16は、光を発した発光画素と共役関係にある画素から得られる光検出ヒストグラムを模式的に示す図である。タイミング1603は、全体制御部140から発光信号が発せられたタイミング(時刻)である。図16の光検出ヒストグラムは2つのピーク1601,1602を示す。先に現れるピーク1601は、参照光が検出されたタイミングを示す参照光ピークであり、後に現れるピーク1602は、物体反射光が検出されたタイミングを示す物体反射光ピークである。参照光ピーク1601から、発光信号が発せられてから参照光が検出されるまでの時間である参照光ピーク時間1604が取得される。また、物体反射光ピーク1602から、発光信号が発せられてから物体反射光が検出されるまでの時間である物体反射光ピーク時間1605が取得される。このようにして得られた物体反射光ピーク時間1605から参照光ピーク時間1604が減算される。そうすることで、実施形態1と同様に、発光素子駆動部112、発光素子、受光素子、TDCアレイ122、信号伝達に用いるバッファなどの個体ばらつきや温度特性などによって影響が除去された飛行時間TOFを得ることができる。 Figure 16 is a schematic diagram showing a light detection histogram obtained from a pixel that is conjugate with the light-emitting pixel that emitted light. Timing 1603 is the timing (time) at which an emission signal was emitted from the overall control unit 140. The light detection histogram in Figure 16 shows two peaks 1601 and 1602. The earlier peak 1601 is a reference light peak indicating the timing at which the reference light was detected, and the later peak 1602 is an object reflected light peak indicating the timing at which the object reflected light was detected. From the reference light peak 1601, a reference light peak time 1604 is obtained, which is the time from when the emission signal is emitted to when the reference light is detected. Furthermore, from the object reflected light peak 1602, an object reflected light peak time 1605 is obtained, which is the time from when the emission signal is emitted to when the object reflected light is detected. The reference light peak time 1604 is subtracted from the object reflected light peak time 1605 obtained in this manner. By doing so, as in embodiment 1, it is possible to obtain a time of flight TOF in which the effects of individual variations and temperature characteristics of the light-emitting element driver 112, light-emitting element, light-receiving element, TDC array 122, buffers used for signal transmission, etc. are eliminated.
<実施形態2の変形例>
実施形態2の変形例について説明する。本変形例では、実施形態2と同様に、物体反射光と参照光が同じ受光素子(画素)に入射する。また、実施形態1の変形例と同様に、1回の発光ごとに、物体反射光信号から参照光信号を減算し、減算結果を用いたヒストグラム処理を行うことによって、距離を得る。以下、実施形態2と同様の部分については説明を省略し、実施形態2との差分を中心に説明する。
<Modification of the Second Embodiment>
A modification of the second embodiment will now be described. In this modification, similar to the second embodiment, the object-reflected light and the reference light are incident on the same light-receiving element (pixel). Also, similar to the modification of the first embodiment, the distance is obtained by subtracting the reference light signal from the object-reflected light signal for each light emission, and performing histogram processing using the subtraction result. Below, a description of the same parts as the second embodiment will be omitted, and the description will focus on the differences from the second embodiment.
本変形例に係る測距動作は、実施形態1の変形例に係る測距動作(図14)と同様である。但し、ステップS1202では、実施形態2と同様に、行番号jの画素の信号のみが画素出力線304を介してTDCアレイ122に出力されるように設定される。また、ステップS1412では、ステップS1408でRAMに格納された複数の時間のうち、最も短い時間が参照光信号として用いられ、それ以外を物体反射光信号として用いられる。 The ranging operation according to this modified example is the same as the ranging operation according to the modified example of embodiment 1 (Figure 14). However, in step S1202, as in embodiment 2, only the signal from the pixel with row number j is set to be output to the TDC array 122 via the pixel output line 304. Also, in step S1412, of the multiple times stored in RAM in step S1408, the shortest time is used as the reference light signal, and the others are used as the object-reflected light signal.
本変形例によれば、実施形態2と同様の効果が得られる。さらに、実施形態1の変形例と同様に、1回の発光ごとに減算処理が行われるため、発光ごとの計測結果として高精度な結果を得ることができる。 This modified example provides the same effects as embodiment 2. Furthermore, as with the modified example of embodiment 1, subtraction processing is performed for each light emission, making it possible to obtain highly accurate results as measurement results for each light emission.
<実施形態3>
本発明の実施形態3について説明する。実施形態1,2では、1つの画素(受光画素)に含まれるSPAD素子(受光素子)の数は1つである。実施形態3では、1つの画素に複数のSPAD素子が含まれる。以下、実施形態1,2と同様の部分については説明を省略し、実施形態1との差分を中心に説明する。
<Embodiment 3>
A third embodiment of the present invention will be described. In the first and second embodiments, one pixel (light-receiving pixel) includes one SPAD element (light-receiving element). In the third embodiment, one pixel includes multiple SPAD elements. Hereinafter, a description of the same parts as in the first and second embodiments will be omitted, and the description will focus on the differences from the first embodiment.
図17は、実施形態3に係る画素1701の構成例を示す模式図である。画素1701は4つのサブ画素1721~1724からなる。サブ画素1721~1724のそれぞれは、実施形態1の画素301と同様の構成を有する。実施形態3では、実施形態2と同様、同じ発光素子から発せられた光による参照光と物体反射光が同じ画素に入射するとする。つまり、同じ発光素子から発せられた光による参照光と物体反射光は、サブ画素1721~1724のそれぞれに入射する。サブ画素1721~1724には同じ行選択線303が接続されており、サブ画素1721~1724には画素出力線1731~1734がそれぞれ接続されている。図示されていないが、各サブ画素の出力信号を同時に処理できるよう、TDCアレイ122には画素出力線と同じ数のTDC501が含まれている。 Figure 17 is a schematic diagram showing an example configuration of a pixel 1701 according to embodiment 3. The pixel 1701 consists of four sub-pixels 1721 to 1724. Each of the sub-pixels 1721 to 1724 has a configuration similar to that of the pixel 301 according to embodiment 1. In embodiment 3, as in embodiment 2, reference light and object-reflected light generated by the same light-emitting element are assumed to enter the same pixel. In other words, reference light and object-reflected light generated by the same light-emitting element are incident on each of the sub-pixels 1721 to 1724. The same row selection line 303 is connected to the sub-pixels 1721 to 1724, and pixel output lines 1731 to 1734 are connected to the sub-pixels 1721 to 1724, respectively. Although not shown, the TDC array 122 includes the same number of TDCs 501 as the pixel output lines so that the output signals of each sub-pixel can be processed simultaneously.
実施形態3では、不図示のスイッチにより、SPAD1711~1714のモードがアバランシェモードと非アバランシェモードの間で切り替えられる。アバランシェモードでは、アノード電極Vbd1~Vbd4の電圧は、SPAD1711~1714に印加される逆バイアスの電圧がブレークダウン電圧以上となるように設定される。非アバランシェモードでは、アノード電極Vbd1~Vbd4の電圧は、SPAD1711~1714に印加される逆バイアスの電圧がブレークダウン電圧未満となるように設定される。アバランシェモードでは、光子の到来を検出することができるが、光子検出後、ビルドアップ動作およびクエンチ動作の間、光子の到来を検出できない。 In embodiment 3, a switch (not shown) switches the mode of SPAD1711-1714 between avalanche mode and non-avalanche mode. In avalanche mode, the voltage of anode electrodes Vbd1-Vbd4 is set so that the reverse bias voltage applied to SPAD1711-1714 is equal to or greater than the breakdown voltage. In non-avalanche mode, the voltage of anode electrodes Vbd1-Vbd4 is set so that the reverse bias voltage applied to SPAD1711-1714 is less than the breakdown voltage. In avalanche mode, the arrival of photons can be detected, but after photon detection, the arrival of photons cannot be detected during the build-up and quench operations.
光子の到来を検出できないデッドタイムの発生により、実施形態2の方法では、測距装置の非常に近くに存在する物体を検出することができない。そこで、実施形態3では、全体制御部140は、画素に含まれた複数のサブ画素の一部を、当該複数のサブ画素の残りと異なるタイミングで駆動させる受光制御部として機能する。こうすることにより、一部のサブ画素で参照光を検出し、残りのサブ画素で物体反射光を検出するといった動作が実現可能となり、測距装置の非常に近くに存在する物体についても、高精度な測距が可能となる。 Due to the occurrence of dead time during which the arrival of photons cannot be detected, the method of embodiment 2 is unable to detect objects that are very close to the distance measuring device. Therefore, in embodiment 3, the overall control unit 140 functions as a light receiving control unit that drives some of the multiple sub-pixels included in a pixel at a different timing than the rest of the multiple sub-pixels. This makes it possible to perform operations such as detecting reference light with some sub-pixels and detecting object-reflected light with the remaining sub-pixels, enabling highly accurate distance measurement even for objects that are very close to the distance measuring device.
なお、実施形態3では、アノード電極Vbd1~Vbd4の電圧を制御することにより、SPAD1711~1714のモードを切り替えるとするが、モードの切り替え方法はこれに限られない。また、1つの画素に含まれるサブ画素の数は4つより多くても少なくてもよい。 In the third embodiment, the modes of SPAD1711-1714 are switched by controlling the voltages of the anode electrodes Vbd1-Vbd4, but the mode switching method is not limited to this. Furthermore, the number of sub-pixels included in one pixel may be more or less than four.
図18は、実施形態3に係る測距動作の一例を示す模式図である。図18には、SPAD1711~1714のモード切替タイミングとデッドタイム、および光を発した発光画素と共役関係にある画素(サブ画素1721~1724)から得られる光検出ヒストグラムを示す。スイッチφVbd1~φVbd4は、SPAD1711~1714のモードを切り替えるスイッチであり、紙面上側がオン(アバランシェモードの電圧)、紙面下側がオフ(非アバランシェモードの電圧)を示している。図中、「非アバランシェ」は非アバランシェモードの期間を示し、「デッドタイム」はビルドアップ動作およびクエンチ動作中のため光子の到来を検出できない期間を示している。タイミング1803は、全体制御部140から発光信号が発せられたタイミング(時刻)である。 FIG. 18 is a schematic diagram showing an example of distance measurement operation according to embodiment 3. FIG. 18 shows the mode switching timing and dead time of SPADs 1711-1714, as well as a light detection histogram obtained from pixels (sub-pixels 1721-1724) that are conjugate with the light-emitting pixel that emitted light. Switches φVbd1-φVbd4 are switches that switch the mode of SPADs 1711-1714, with the upper side of the figure indicating on (avalanche mode voltage) and the lower side indicating off (non-avalanche mode voltage). In the figure, "non-avalanche" indicates the period in non-avalanche mode, and "dead time" indicates the period during which incoming photons cannot be detected due to build-up and quench operations. Timing 1803 is the timing (time) at which a light emission signal is issued from the overall control unit 140.
全体制御部140は、例えば、以下の動作が実現されるように、スイッチφVbd1~φVbd4を制御する。タイミング1803では、SPAD1711のみがアバランシェモードであり、SPAD1712~1714は非アバランシェモードである。その後、所定時刻ごとにSPAD1712~1714が、順次、アバランシェモードになる。なお、半数のサブ画素で参照光が検出され、残り半数のサブ画素で物体反射光が検出されるように、設定された発光回数Ntotal分の計測中、参照光と物体反射光の検出結果に基づいて、各SPADのモード切替タイミングを変更してもよい。非アバランシェモードからアバランシェモードに切り替えるタイミングは、SPAD(受光素子)を駆動するタイミングと解釈してもよい。 The overall control unit 140 controls the switches φVbd1 to φVbd4 to achieve, for example, the following operation. At timing 1803, only the SPAD 1711 is in the avalanche mode, and the SPADs 1712 to 1714 are in the non-avalanche mode. Thereafter, the SPADs 1712 to 1714 sequentially switch to the avalanche mode at predetermined time intervals. Note that the mode switching timing of each SPAD may be changed based on the detection results of the reference light and the object-reflected light during the measurement of the set number of light emissions N total , so that the reference light is detected in half of the subpixels and the object-reflected light is detected in the remaining half of the subpixels. The timing of switching from the non-avalanche mode to the avalanche mode may also be interpreted as the timing of driving the SPAD (light-receiving element).
図18の光検出ヒストグラムは、SPAD1711~1714から得られる信号を足し合わせたヒストグラムである。図18の光検出ヒストグラムは、実施形態2と同様に、参照光ピーク1801と物体反射光ピーク1802示す。実施形態3では、1つの画素における複数のSPADが異なるタイミングでアバランシェモードになるように、位相差をつけて当該複数のSPADを制御することで、参照光の受光によって当該複数のSPADの全てがデッドタイム状態となることを防いでいる。そのため、SPADのデッドタイムに対応する距離よりも近距離の物体についても、物体反射光ピーク1802を得ることができる。 The light detection histogram in Figure 18 is a histogram obtained by adding up the signals obtained from the SPADs 1711 to 1714. As with embodiment 2, the light detection histogram in Figure 18 shows a reference light peak 1801 and an object reflected light peak 1802. In embodiment 3, multiple SPADs in one pixel are controlled with a phase difference so that they enter avalanche mode at different times, preventing all of the multiple SPADs from entering a dead time state due to reception of the reference light. Therefore, an object reflected light peak 1802 can be obtained even for objects closer than the distance corresponding to the dead time of the SPADs.
参照光ピーク1801から、発光信号が発せられてから参照光が検出されるまでの時間である参照光ピーク時間1804が取得される。また、物体反射光ピーク1802から、発光信号が発せられてから物体反射光が検出されるまでの時間である物体反射光ピーク時間1805が取得される。このようにして得られた物体反射光ピーク時間1805から参照光ピーク時間1804が減算される。そうすることで、実施形態1,2と同様に、発光素子駆動部112、発光素子、受光素子、TDCアレイ122、信号伝達に用いるバッファなどの個体ばらつきや温度特性などによって影響が除去された飛行時間TOFを得ることができる。さらに、測距装置から物体までの距離がSPADのデッドタイムに対応する距離よりも短い場合であっても、このような効果を得ることができる。 Reference light peak time 1804, which is the time from when the light emission signal is emitted until the reference light is detected, is obtained from reference light peak 1801. Furthermore, object reflected light peak time 1805, which is the time from when the light emission signal is emitted until the light reflected from the object is detected, is obtained from object reflected light peak 1802. Reference light peak time 1804 is subtracted from object reflected light peak time 1805 obtained in this manner. In this way, as in embodiments 1 and 2, a time of flight TOF can be obtained that is free from the influence of individual variations and temperature characteristics of the light-emitting element drive unit 112, light-emitting element, light-receiving element, TDC array 122, buffers used for signal transmission, etc. Furthermore, this effect can be obtained even if the distance from the ranging device to the object is shorter than the distance corresponding to the dead time of the SPAD.
<実施形態3の変形例>
実施形態3の変形例について説明する。本変形例では、実施形態1の変形例、および実施形態2の変形例と同様に、1回の発光ごとに、物体反射光信号から参照光信号を減算し、減算結果を用いたヒストグラム処理を行うことによって、距離を得る。以下、実施形態3と同様の部分については説明を省略し、実施形態3との差分を中心に説明する。
<Modification of the Third Embodiment>
A modification of the third embodiment will now be described. In this modification, similar to the modifications of the first and second embodiments, the distance is obtained by subtracting the reference light signal from the object-reflected light signal for each light emission and performing histogram processing using the subtraction result. Below, a description of the same parts as in the third embodiment will be omitted, and the differences from the third embodiment will be mainly described.
本変形例に係る測距動作は、実施形態2の変形例に係る測距動作(図14)と同様である。ステップS1202では、実施形態2と同様に、行番号jの画素の信号のみが画素出力線304を介してTDCアレイ122に出力されるように設定される。また、ステップS1412では、ステップS1408でRAMに格納された複数の時間のうち、最も短い時間が参照光信号として用いられ、それ以外を物体反射光信号として用いられる。 The ranging operation according to this modified example is the same as the ranging operation according to the modified example of embodiment 2 (Figure 14). In step S1202, as in embodiment 2, only the signal from the pixel with row number j is set to be output to the TDC array 122 via the pixel output line 304. Also, in step S1412, of the multiple times stored in RAM in step S1408, the shortest time is used as the reference light signal, and the others are used as the object-reflected light signal.
本変形例によれば、実施形態3と同様の効果が得られる。さらに、実施形態1の変形例、および実施形態2の変形例と同様に、1回の発光ごとに減算処理が行われるため、発光ごとの計測結果として高精度な結果を得ることができる。 This modified example provides the same effects as embodiment 3. Furthermore, as with the modified examples of embodiment 1 and embodiment 2, subtraction processing is performed for each light emission, making it possible to obtain highly accurate results as measurement results for each light emission.
以上、本発明の実施形態を詳述してきたが、本発明はこれら特定の実施形態に限られるものではなく、この発明の要旨を逸脱しない範囲の様々な形態も本発明に含まれる。さらに、上述した各実施形態は本発明の一実施形態を示すものにすぎず、各実施形態を適宜組み合わせることも可能である。 Although the embodiments of the present invention have been described in detail above, the present invention is not limited to these specific embodiments, and various forms within the scope of the gist of the invention are also included in the present invention. Furthermore, each of the above-described embodiments merely represents one embodiment of the present invention, and each embodiment can be combined as appropriate.
本実施形態の開示は、以下の構成を含む。
(構成1)
複数の発光素子を含む発光素子アレイと、
複数の受光素子を含む受光素子アレイと、
時間を計測する計時部と、
ハーフミラーと反射面を有するビームスプリッタと、
前記計時部によって計測された時間に基づいて、物体までの距離を計測する測距部と
を有し、
前記発光素子から発せられた光は、前記ハーフミラーによって第1の光と第2の光とに分けられ、
前記第1の光は、前記物体で反射して前記複数の受光素子のいずれかに入射し、
前記第2の光は、前記反射面で反射して前記複数の受光素子のいずれかに入射し、
前記測距部は、前記第1の光が前記物体で反射して前記複数の受光素子のいずれかに入射するまでの時間から、前記第2の光が前記反射面で反射して前記複数の受光素子のいずれかに入射するまでの時間を減算して得られる時間に基づいて、前記物体までの距離を計測する
ことを特徴とする測距装置。
(構成2)
前記複数の発光素子は、マトリクス状に配置されており、
前記測距装置は、
各行の発光素子を個別に発光させる発光制御部
をさらに有し、
前記複数の発光素子は、前記ハーフミラーを介して前記複数の受光素子とそれぞれ共役関係にあり、
前記第1の光および前記第2の光は、第1の行の発光素子から発せられた光を前記ハーフミラーによって分割することによって得られた光であり、
前記第1の光は、前記物体で反射して、前記第1の行の前記発光素子と共役関係にある受光素子に入射し、
前記第2の光は、前記反射面で反射して、前記第1の行とは異なる第2の行の発光素子と共役関係にある受光素子に入射する
ことを特徴とする構成1に記載の測距装置。
(構成3)
前記第2の行は、前記第1の行の隣の行である
ことを特徴とする構成2に記載の測距装置。
(構成4)
前記複数の発光素子は、等間隔で配置されており、
前記反射面は、前記発光素子アレイと対向しており、列方向において平坦であり、行方向において各々が前記複数の発光素子の間隔の2倍の幅を有する連続した複数の凹部を有する
ことを特徴とする構成2または3に記載の測距装置。
(構成5)
前記凹部は、2つの平面によって形成されている
ことを特徴とする構成4に記載の測距装置。
(構成6)
前記凹部は、曲面によって形成されている
ことを特徴とする構成4に記載の測距装置。
(構成7)
前記複数の発光素子は、マトリクス状に配置されており、
前記複数の発光素子は、前記ハーフミラーを介して前記複数の受光素子とそれぞれ共役関係にあり、
前記第1の光および前記第2の光は、それらの元となる光を発した発光素子と共役関係にある受光素子に入射する
ことを特徴とする構成1~6のいずれかに記載の測距装置。
(構成8)
前記反射面は、多層膜によって形成されている
ことを特徴とする構成1~7のいずれかに記載の測距装置。
(構成9)
前記反射面は、前記発光素子アレイから発せられた光における一部の波長範囲の光を吸収する吸収材を含む
ことを特徴とする構成1~8のいずれかに記載の測距装置。
(構成10)
前記複数の受光素子は、各々が2つ以上の受光素子を含む複数の受光画素を形成し、
前記第2の光は、前記反射面で反射して前記複数の受光画素のいずれかに入射し、
前記測距装置は、
前記受光画素に含まれた2つ以上の受光素子の一部を、当該2つ以上の受光素子の残りと異なるタイミングで駆動させる受光制御部
をさらに有する
ことを特徴とする構成1~9のいずれかに記載の測距装置。
(構成11)
前記受光素子は、アバランシェダイオードである
ことを特徴とする構成10に記載の測距装置。
(構成12)
前記受光制御部は、前記受光素子アレイにおける前記第1の光および前記第2の光の検出結果に基づいて、各受光素子を駆動するタイミングを変更する
ことを特徴とする構成10または11に記載の測距装置。
The disclosure of this embodiment includes the following configuration.
(Configuration 1)
a light-emitting element array including a plurality of light-emitting elements;
a light receiving element array including a plurality of light receiving elements;
A timing unit that measures time;
a beam splitter having a half mirror and a reflecting surface;
a distance measuring unit that measures the distance to an object based on the time measured by the timing unit,
The light emitted from the light-emitting element is separated into a first light and a second light by the half mirror,
the first light is reflected by the object and incident on any one of the plurality of light receiving elements,
the second light is reflected by the reflecting surface and incident on any one of the plurality of light receiving elements,
A ranging device characterized in that the ranging unit measures the distance to the object based on the time obtained by subtracting the time it takes for the second light to be reflected by the reflecting surface and enter one of the multiple light receiving elements from the time it takes for the first light to be reflected by the object and enter one of the multiple light receiving elements.
(Configuration 2)
The plurality of light-emitting elements are arranged in a matrix,
The distance measuring device is
a light-emission control unit that controls the light-emitting elements in each row to emit light individually;
the plurality of light-emitting elements are in a conjugate relationship with the plurality of light-receiving elements via the half mirror,
the first light and the second light are light obtained by splitting light emitted from light-emitting elements in a first row by the half mirror,
the first light is reflected by the object and incident on a light receiving element in a conjugate relationship with the light emitting element in the first row;
2. The distance measuring device according to claim 1, wherein the second light is reflected by the reflecting surface and incident on a light receiving element that is in a conjugate relationship with a light emitting element in a second row different from the first row.
(Configuration 3)
3. The distance measuring device according to configuration 2, wherein the second row is a row adjacent to the first row.
(Configuration 4)
The plurality of light emitting elements are arranged at equal intervals,
The distance measuring device described in configuration 2 or 3, characterized in that the reflective surface faces the light-emitting element array, is flat in the column direction, and has a plurality of continuous recesses in the row direction, each having a width twice the spacing between the plurality of light-emitting elements.
(Configuration 5)
5. The distance measuring device according to configuration 4, wherein the recess is formed by two flat surfaces.
(Configuration 6)
5. The distance measuring device according to configuration 4, wherein the recess is formed by a curved surface.
(Configuration 7)
The plurality of light-emitting elements are arranged in a matrix,
the plurality of light-emitting elements are in a conjugate relationship with the plurality of light-receiving elements via the half mirror,
The distance measuring device according to any one of configurations 1 to 6, wherein the first light and the second light are incident on a light receiving element that is conjugate with a light emitting element that emitted the light that is the source of the first light and the second light.
(Configuration 8)
8. The distance measuring device according to any one of configurations 1 to 7, wherein the reflecting surface is formed of a multilayer film.
(Configuration 9)
9. The distance measuring device according to any one of configurations 1 to 8, wherein the reflecting surface includes an absorbing material that absorbs light in a partial wavelength range of the light emitted from the light emitting element array.
(Configuration 10)
the plurality of light receiving elements form a plurality of light receiving pixels, each of which includes two or more light receiving elements;
the second light is reflected by the reflecting surface and incident on any one of the plurality of light-receiving pixels;
The distance measuring device is
10. The distance measuring device according to any one of configurations 1 to 9, further comprising a light receiving control unit that drives a part of two or more light receiving elements included in the light receiving pixel at a timing different from that of the rest of the two or more light receiving elements.
(Configuration 11)
11. The distance measuring device according to configuration 10, wherein the light receiving element is an avalanche diode.
(Configuration 12)
12. The distance measuring device according to configuration 10 or 11, wherein the light receiving control unit changes the timing for driving each light receiving element based on the detection results of the first light and the second light in the light receiving element array.
本発明は上記実施の形態に制限されるものではなく、本発明の精神及び範囲から離脱することなく、様々な変更及び変形が可能である。従って、本発明の範囲を公にするために以下の請求項を添付する。 The present invention is not limited to the above-described embodiments, and various modifications and variations are possible without departing from the spirit and scope of the present invention. Therefore, the following claims are appended to clarify the scope of the present invention.
本願は、2024年4月2日提出の日本国特許出願特願2024-059338を基礎として優先権を主張するものであり、その記載内容の全てをここに援用する。 This application claims priority based on Japanese Patent Application No. 2024-059338, filed April 2, 2024, the entire contents of which are incorporated herein by reference.
111:発光素子アレイ 121:受光素子アレイ 122:TDCアレイ
123:信号処理部 140:全体制御部 150:ビームスプリッタ
111: Light emitting element array 121: Light receiving element array 122: TDC array 123: Signal processing unit 140: Overall control unit 150: Beam splitter
Claims (12)
複数の受光素子を含む受光素子アレイと、
時間を計測する計時部と、
ハーフミラーと反射面を有するビームスプリッタと、
前記計時部によって計測された時間に基づいて、物体までの距離を計測する測距部と
を有し、
前記発光素子から発せられた光は、前記ハーフミラーによって第1の光と第2の光とに分けられ、
前記第1の光は、前記物体で反射して前記複数の受光素子のいずれかに入射し、
前記第2の光は、前記反射面で反射して前記複数の受光素子のいずれかに入射し、
前記測距部は、前記第1の光が前記物体で反射して前記複数の受光素子のいずれかに入射するまでの時間から、前記第2の光が前記反射面で反射して前記複数の受光素子のいずれかに入射するまでの時間を減算して得られる時間に基づいて、前記物体までの距離を計測する
ことを特徴とする測距装置。 a light-emitting element array including a plurality of light-emitting elements;
a light receiving element array including a plurality of light receiving elements;
A timing unit that measures time;
a beam splitter having a half mirror and a reflecting surface;
a distance measuring unit that measures the distance to an object based on the time measured by the timing unit,
The light emitted from the light-emitting element is separated into a first light and a second light by the half mirror,
the first light is reflected by the object and incident on any one of the plurality of light receiving elements,
the second light is reflected by the reflecting surface and incident on any one of the plurality of light receiving elements,
A ranging device characterized in that the ranging unit measures the distance to the object based on the time obtained by subtracting the time it takes for the second light to be reflected by the reflecting surface and enter one of the multiple light receiving elements from the time it takes for the first light to be reflected by the object and enter one of the multiple light receiving elements.
前記測距装置は、
各行の発光素子を個別に発光させる発光制御部
をさらに有し、
前記複数の発光素子は、前記ハーフミラーを介して前記複数の受光素子とそれぞれ共役関係にあり、
前記第1の光および前記第2の光は、第1の行の発光素子から発せられた光を前記ハーフミラーによって分割することによって得られた光であり、
前記第1の光は、前記物体で反射して、前記第1の行の前記発光素子と共役関係にある受光素子に入射し、
前記第2の光は、前記反射面で反射して、前記第1の行とは異なる第2の行の発光素子と共役関係にある受光素子に入射する
ことを特徴とする請求項1に記載の測距装置。 The plurality of light-emitting elements are arranged in a matrix,
The distance measuring device is
a light-emission control unit that controls the light-emitting elements in each row to emit light individually;
the plurality of light-emitting elements are in a conjugate relationship with the plurality of light-receiving elements via the half mirror,
the first light and the second light are light obtained by splitting light emitted from light-emitting elements in a first row by the half mirror,
the first light is reflected by the object and incident on a light receiving element in a conjugate relationship with the light emitting element in the first row;
2. The distance measuring device according to claim 1, wherein the second light is reflected by the reflecting surface and incident on a light receiving element that is in a conjugate relationship with the light emitting element in a second row different from the first row.
ことを特徴とする請求項2に記載の測距装置。 3. The distance measuring device according to claim 2, wherein the second row is a row adjacent to the first row.
前記反射面は、前記発光素子アレイと対向しており、列方向において平坦であり、行方向において各々が前記複数の発光素子の間隔の2倍の幅を有する連続した複数の凹部を有する
ことを特徴とする請求項2に記載の測距装置。 The plurality of light emitting elements are arranged at equal intervals,
3. The distance measuring device according to claim 2, wherein the reflecting surface faces the light-emitting element array, is flat in the column direction, and has a plurality of consecutive recesses in the row direction, each having a width twice the spacing between the plurality of light-emitting elements.
ことを特徴とする請求項4に記載の測距装置。 5. The distance measuring device according to claim 4, wherein the recess is formed by two flat surfaces.
ことを特徴とする請求項4に記載の測距装置。 5. The distance measuring device according to claim 4, wherein the recess is formed by a curved surface.
前記複数の発光素子は、前記ハーフミラーを介して前記複数の受光素子とそれぞれ共役関係にあり、
前記第1の光および前記第2の光は、それらの元となる光を発した発光素子と共役関係にある受光素子に入射する
ことを特徴とする請求項1~6のいずれか1項に記載の測距装置。 The plurality of light-emitting elements are arranged in a matrix,
the plurality of light-emitting elements are in a conjugate relationship with the plurality of light-receiving elements via the half mirror,
A distance measuring device according to any one of claims 1 to 6, characterized in that the first light and the second light are incident on a light receiving element that is conjugate with the light emitting element that emitted the original light.
ことを特徴とする請求項1~6のいずれか1項に記載の測距装置。 7. The distance measuring device according to claim 1, wherein the reflecting surface is formed of a multi-layer film.
ことを特徴とする請求項1~6のいずれか1項に記載の測距装置。 7. The distance measuring device according to claim 1, wherein the reflecting surface includes an absorbent material that absorbs light in a partial wavelength range of the light emitted from the light emitting element array.
前記第2の光は、前記反射面で反射して前記複数の受光画素のいずれかに入射し、
前記測距装置は、
前記受光画素に含まれた2つ以上の受光素子の一部を、当該2つ以上の受光素子の残りと異なるタイミングで駆動させる受光制御部
をさらに有する
ことを特徴とする請求項1~6のいずれか1項に記載の測距装置。 the plurality of light receiving elements form a plurality of light receiving pixels, each of which includes two or more light receiving elements;
the second light is reflected by the reflecting surface and incident on any one of the plurality of light-receiving pixels;
The distance measuring device is
A distance measuring device as described in any one of claims 1 to 6, characterized in that it further has a light receiving control unit that drives some of the two or more light receiving elements included in the light receiving pixel at a different timing than the remaining two or more light receiving elements.
ことを特徴とする請求項10に記載の測距装置。 11. The distance measuring device according to claim 10, wherein the light receiving element is an avalanche diode.
ことを特徴とする請求項10に記載の測距装置。 11. The distance measuring device according to claim 10, wherein the light receiving control unit changes the timing at which each light receiving element is driven based on a detection result of the first light and the second light in the light receiving element array.
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| JP2024059338A JP2025156738A (en) | 2024-04-02 | 2024-04-02 | distance measuring device |
| JP2024-059338 | 2024-04-02 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04279889A (en) * | 1991-01-08 | 1992-10-05 | Nec Corp | Laser range instrument |
| JP2020003250A (en) * | 2018-06-26 | 2020-01-09 | 国立大学法人静岡大学 | Distance measuring device |
| US20220107409A1 (en) * | 2020-10-07 | 2022-04-07 | Samsung Electronics Co., Ltd. | Optical sensor device for determining distance to object and velocity of the object, and identifying the shape and structure of the object |
| JP2023062101A (en) * | 2019-03-19 | 2023-05-02 | 株式会社東芝 | Photodetector and distance measuring device |
| WO2024057675A1 (en) * | 2022-09-13 | 2024-03-21 | キヤノン株式会社 | Optical device, in-vehicle system, and mobile device |
-
2024
- 2024-04-02 JP JP2024059338A patent/JP2025156738A/en active Pending
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- 2025-02-17 WO PCT/JP2025/005100 patent/WO2025211035A1/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04279889A (en) * | 1991-01-08 | 1992-10-05 | Nec Corp | Laser range instrument |
| JP2020003250A (en) * | 2018-06-26 | 2020-01-09 | 国立大学法人静岡大学 | Distance measuring device |
| JP2023062101A (en) * | 2019-03-19 | 2023-05-02 | 株式会社東芝 | Photodetector and distance measuring device |
| US20220107409A1 (en) * | 2020-10-07 | 2022-04-07 | Samsung Electronics Co., Ltd. | Optical sensor device for determining distance to object and velocity of the object, and identifying the shape and structure of the object |
| WO2024057675A1 (en) * | 2022-09-13 | 2024-03-21 | キヤノン株式会社 | Optical device, in-vehicle system, and mobile device |
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