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WO2025209832A1 - Appareil pour piéger des débris - Google Patents

Appareil pour piéger des débris

Info

Publication number
WO2025209832A1
WO2025209832A1 PCT/EP2025/057372 EP2025057372W WO2025209832A1 WO 2025209832 A1 WO2025209832 A1 WO 2025209832A1 EP 2025057372 W EP2025057372 W EP 2025057372W WO 2025209832 A1 WO2025209832 A1 WO 2025209832A1
Authority
WO
WIPO (PCT)
Prior art keywords
trap structure
debris trap
euv
tin
debris
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/EP2025/057372
Other languages
English (en)
Inventor
Yue Ma
Andrey Nikipelov
Marcus Adrianus Van De Kerkhof
Hubertus Johannes VAN DE WIEL
Ruhou GAO
William Craig MILLAR
Jan Steven Christiaan Westerlaken
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of WO2025209832A1 publication Critical patent/WO2025209832A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning

Definitions

  • the present disclosure relates to a debris trap structure for an EUV source or an EUV utilization apparatus.
  • the present disclosure also relates to a sub-system of an EUV source or an EUV utilization apparatus comprising such a debris trap structure.
  • the present disclosure also relates to an EUV source or EUV utilization apparatus comprising such a debris trap structure or sub-system.
  • Also disclosed is a method of mitigating contamination in an EUV source or EUV utilization apparatus.
  • the present disclosure has particular, but not exclusive, application to EUV lithography.
  • the present disclosure has particular, but not exclusive, application to tin debris and lithium debris.
  • a lithographic apparatus is a machine constructed to apply a desired pattern onto a substrate.
  • a lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs) .
  • a lithographic apparatus may for example proj ect a pattern from a patterning device (e .g . a mask) onto a layer of radiation-sensitive material (resist) provided on a substrate.
  • a patterning device e .g . a mask
  • resist radiation-sensitive material
  • the wavelength of radiation used by a lithographic apparatus to project a pattern onto a substrate determines the minimum size of features which can be formed on that substrate.
  • a lithographic apparatus which uses EUV radiation being electromagnetic radiation having a wavelength within the range 4-20 nm, may be used to form smaller features on a substrate than a conventional lithographic apparatus (which may for example use electromagnetic radiation with a wavelength of 193 nm).
  • target material such as tin or lithium
  • some target material such as tin or lithium
  • the target material which is able to pass through then can contaminate the sensitive optical elements of the apparatus, leading to, for example, lower performance of the optical elements by decreasing transmission of the radiation and also causing particle-derived defects on the reticle.
  • the surface may comprise a shape that supresses forward scattering/splashing of debris, such as tin droplets or lithium droplets, which propagate generally from the intermediate focus (IF) around an EUV cone or that supresses forward scattering of tin or lithium atoms, that propagate generally towards IF and/or orthogonal to an EUV cone axis.
  • the surface may be configured to trap, block, and/or deflect droplets or atoms of target material. It will be appreciated that droplets of target material, such as tin or lithium, primarily travel in a direction similar to that of an EUV radiation beam since the direction of travel is restricted by the need to pass through the intermediate focus.
  • the debris trap structure may include one or more surfaces which are shaped to suppress forward scattering or splashing of such debris. It will also be appreciated that the droplets may be the source of atomic debris and that the atoms may propagate in a direction which is not the same as that of the particles. As such, the debris trap structure may include one or more surfaces which are shaped to suppress scattering of target material debris, such as tin atoms or lithium atoms, which propagate towards the intermediate focus and/or orthogonal to the EUV cone axis.
  • target material debris such as tin atoms or lithium atoms
  • the debris trap structure may include a geometry that supresses forward scattering and/or forward splashing of droplets, that propagate generally from intermediate focus outside of EUV cone.
  • the debris trap structure may include a geometry that supresses scattering of energetic tin atoms in the direction of illuminator optical elements, where energetic tin atoms originate generally within EUV cone near intermediate focus, and propagate generally in the direction orthogonal to EUV cone axis or in the direction towards the intermediate focus, in case or tin droplets that have escaped from the EUV source intro the EUV scanner.
  • This flow of gas is able to suppress gaseous debris or contamination, but is less able to stop particles as the particles travel very quickly.
  • the flow of gas physically cannot be further increased enough to protect against particles as it is already at close to sonic speeds and, so attempting to increase the flow further is limited by the effect of choking; additionally the flow of gas is limited by pumping capacity, and so an additional strategy is required.
  • a debris trap structure such as a tin or lithium trap structure, which includes a heater which is configured to heat a surface of the structure to a temperature of 100°C or higher, and optionally below 500°C
  • the debris trap structure can intercept vapor (originating mainly from target material droplets that evaporate in an EUV cone) or it can intercept droplets, that propagate outside of the EUV cone generally from the intermediate focus in the direction of illuminator optics.
  • vapor originating mainly from target material droplets that evaporate in an EUV cone
  • droplets that propagate outside of the EUV cone generally from the intermediate focus in the direction of illuminator optics.
  • Such temperatures may be utilised during nominal use of the EUV source or EUV utilization apparatus.
  • the debris trap structure may include a surface comprising a getter material for target material, such as tin or lithium, such as noble metal, or a metal or metal alloy having an electronegativity higher than tin.
  • a getter material is a material which is able to absorb, adsorb, or react with another material to retain the another material.
  • Such metals catalytically dehydrogenate stannane and stabilise any metallic tin which is deposited thereon. As such, these metals are able to act as a getter material for tin vapor even at room temperature.
  • the getter materials will, over time, saturate with the target material deposited on the surface.
  • the debris trap structure may define a conical volume at least partially surrounding an EUV cone in nominal use. Preferably it is positioned in the vicinity of intermediate focus, for example within 0.1 to 10 cm from the intermediate focus. It will be understood that any EUV radiation which passes from an EUV radiation source through an intermediate focus expands in the shape of a cone, with the narrowest portion or tip of the cone being located at the intermediate focus.
  • the debris trap structure may not block the EUV radiation as this would reduce the amount of EUV radiation available for imaging.
  • the surface of the debris trap structure is close to the EUV cone and is therefore positioned to retain any tin vapour which is emitted from particles being evaporated within the EUV cone.
  • the surface may partially impinge on the EUV cone. In this way, a small proportion of the EUV energy can be used to heat the surface of the debris trap structure. If the surface comprises a material with low emissivity, such as copper, molybdenum, silver, or ruthenium, which may be less than 0.05, then only a small amount of energy from the EUV radiation is needed to be intercepted to heat the surface.
  • the surface may form a continuous wall around the EUV cone.
  • the surface may form a discontinuous wall around the EUV cone.
  • the conical volume may be defined by a stacked series of plates having an aperture through which EUV radiation may pass.
  • the aperture may increase in size to accommodate a widening EUV radiation beam. The increase in aperture size thereby defines a conical volume, albeit without continuous walls.
  • the maximum temperature of the surface is kept below the melting point of tin (232°C) so that any tin particles deposited on the surface remains solid.
  • the temperature is above that at which tin hydrides, such as stannane, spontaneously thermally decompose but below the melting point of metallic tin, so any tin hydride formed due to tin etching by hydrogen plasma is locally decomposed and redeposited, instead of escaping into the illumination system.
  • the hot surface temperature prevents the formation of tin hydride by EUV plasma, even when the thickness of any tin deposited on the surface already exceeds 2 or 3 monolayers. Even when the surface temperature is around 300°C within a low pressure environment, the rate of evaporation of the tin is very low, in the order of 2 x 10' 4 monolayers per year.
  • the heater may be configured to provide the surface of the debris trap structure up to a temperature of around 1000°C.
  • the temperatures of over 500°C may be utilised when the EUV utilization apparatus or source are undergoing a cleaning cycle which is intended to remove contamination therein. Whilst the surface may operate at a lower temperature in nominal use, for example, limited to 500 °C , it may be heated to higher temperatures during a cleaning operation in order to remove any tin which has been deposited.
  • tin will sublimate. Under such conditions, the tin is estimated to sublimate at a rate of around 1 monolayer per 100 seconds, or even faster.
  • the debris trap structure may include a source of oxygen free and water vapour free gas configured to carry away sublimated tin or lithium.
  • the gas is dry noble gas, dry nitrogen, dry hydrogen, or a mixture thereof.
  • the source may be configured to direct the gas across the surface of the debris trap structure. In this way any sublimated tin or lithium is carried away in the flow of gas.
  • the gas is oxygen free and water vapour free in order to avoid oxidation of the tin or lithium. This is because the vapour pressure of tin oxide or lithium oxide is significantly less than that of metallic tin or lithium at any temperature and so oxidation of the tin or lithium vapour could stall or stop sublimation.
  • the debris trap may include two or more plates.
  • the surface of the debris trap may include two or more corrugations.
  • the corrugations may be in the form of ridges, steps, zig-zags, or waves.
  • the surface of the debris trap may include two or more plates and two or more corrugations. Since the surface may serve as a getter material and/or as a surface to thermally decompose tin hydrides, having an increased surface area provides an increase in capacity for holding tin or lithium.
  • tin or lithium atoms originating from tin or lithium droplets evaporating within EUV cone may be energetic, since droplets temperature can exceed 2000 °C close to intermediate focus. Such energetic atoms may bounce off the surface .
  • the debris trap such, that an impact of an energetic atom is at grazing incidence and the most likely bounce direction (reflection) steers the atoms away from optical elements and towards other surfaces of the debris trap.
  • This can be achieved by providing two or more plates and/or two or more corrugations, since it increases likelihood that energetic atoms will collide with the debris trap surface again or even multiple times after the first bounce and eventually will be captured by the debris trap.
  • the two or more plates may each define a respective plane.
  • the plane of one or more of the two or more plates may be substantially perpendicular to a nominal direction of particles. Additionally or alternatively, the plane of at least one of the two or more plates may be angled relative to the direction of the particles in nominal use. As such, the plane of the plates may intersect the axis of the particles at 90° in the case where the two are exactly perpendicular.
  • the plane of the plates may intersect the particles at any angle above 0° (where the plane and the direction of the particles are parallel meaning that they do not cross) and below 180° (where the plane and the axis are anti -parallel, again meaning that they do not cross).
  • the surface of the debris trap structure is angled relative to a nominal direction of particles such that the particles meet the surface at a grazing incidence in nominal use.
  • the particles can be deflected to cause them to lose energy and also to deflect them away from the illumination system and the sensitive optical elements therein.
  • the debris trap structure may have a proximal end and a distal end.
  • the debris trap structure may be configured to locate the proximal end from 0 mm to 500 mm from an intermediate focus in an assembled condition.
  • the distance may be less than 300 mm, less than 200 mm, or less than 150 mm.
  • the debris trap structure may be configured to locate the proximal end from 0 mm to 30 mm from an intermediate focus in an assembled condition.
  • the distance may be less than 25 mm, less than 20 mm, less than 15 mm, or less than 10 mm. Where the proximal end is at 0 mm, it is in contact with the intermediate focus.
  • the heater may be a close loop controlled heating element.
  • a sub-system of an EUV source or EUV utilization apparatus comprising an illumination system including the debris trap structure according to the first aspect of the present disclosure.
  • the illumination system includes a number of optical elements which reflect and shape an EUV radiation beam and directed it onto a reticle where it is patterned.
  • the illumination system is susceptible to contamination by way of tin passing through an intermediate focus disposed between the illumination system and an EUV source.
  • the provision of the debris trap structure in the illumination system preferably at an entrance of the illumination system where the EUV radiation and tin contamination enters, provides for capture of the tin, thereby reducing the likelihood of tin reaching the sensitive optical elements, such as mirrors or sensors.
  • a lithographic system comprising an EUV source and an EUV lithographic apparatus comprising a debris trap structure, sub-system, EUV source, or lithographic apparatus according to any of the first to third aspects of the present disclosure.
  • any tin hydrides are thermally decomposed which prevents them from diffusing into the EUV source or EUV utilization apparatus and causing damage.
  • a debris trap structure according to the first aspect of the present disclosure, the sub-system according to the second aspect of the present disclosure, the EUV source or EUV utilization apparatus according to the third aspect of the present disclosure, the lithographic system according the fourth aspect of the present disclosure, or the method according to the fifth aspect of the present disclosure in an EUV utilization method or apparatus.
  • Figures 2a to 2d depicts a cascade of events in which a particle or droplet of tin introduces tin vapour to an illuminator due to pulsed evaporation within EUV cone;
  • Figure 7 depicts a debris trap structure including a ridge or corrugated surface according to an embodiment of the present disclosure
  • the projection system is configured to project the radiation beam B’ (now patterned by the mask MA) onto the substrate W.
  • the substrate W may include previously formed patterns. Where this is the case, the lithographic apparatus aligns the patterned radiation beam B with a pattern previously formed on the substrate W.
  • a debris trap structure 15 is depicted along the path of the radiation beam B and surrounding a portion of the EUV radiation cone 16.
  • the patterning device MA may be referred to as the reticle.
  • the support structure MT may be referred to as the reticle stage.
  • the radiation source SO, illumination system IL, and projection system PS may all be constructed and arranged such that they can be isolated from the external environment.
  • a gas at a pressure below atmospheric pressure e.g. hydrogen
  • a vacuum may be provided in illumination system IL and/or the projection system PS.
  • a small amount of gas (e.g. hydrogen) at a pressure well below atmospheric pressure may be provided in the illumination system IL and/or the projection system PS.
  • the radiation source SO shown in figure 1 is, for example, of a type which may be referred to as a laser produced plasma (LPP) source.
  • a laser system 1 which may, for example, include a CO2 laser, is arranged to deposit energy via a laser beam 2 into a fuel, such as tin (Sn) which is provided from, e.g., a fuel emitter 3.
  • Fuel emitter 3 may be connected to a droplet generator apparatus. Although tin is referred to in the following description, any suitable fuel may be used.
  • the fuel is in liquid form, and may, for example, be a metal or alloy.
  • the fuel emitter 3 may comprise a nozzle configured to direct tin, e.g.
  • the collector 5 may have a multilayer mirror structure which is arranged to reflect EUV radiation (e.g., EUV radiation having a desired wavelength such as 13.5 nm).
  • EUV radiation e.g., EUV radiation having a desired wavelength such as 13.5 nm.
  • the collector 5 may have an ellipsoidal configuration, having two focal points. A first one of the focal points may be at the plasma formation region 4, and a second one of the focal points may be at an intermediate focus 6, as discussed below.
  • the laser may be separated from the radiation source SO. Where this is the case, the laser beam may be passed from the laser to the radiation source SO with the aid of a beam delivery system (not shown) comprising, for example, suitable directing mirrors and/or a beam expander, and/or other optics.
  • a beam delivery system (not shown) comprising, for example, suitable directing mirrors and/or a beam expander, and/or other optics.
  • the laser and the radiation source SO may together be considered to be a radiation system.
  • Radiation that is reflected by the collector 5 forms a radiation beam B.
  • the radiation beam B is focused at a point to form an image of the plasma formation region 4, which acts as a virtual radiation source for the illumination system IL.
  • the point at which the radiation beam B is focused may be referred to as the intermediate focus.
  • the radiation source SO is arranged such that the intermediate focus is located at or near to an opening in an enclosing structure of the radiation source.
  • the radiation beam B passes from the radiation source SO into the illumination system IL, which is configured to condition the radiation beam.
  • the illumination system IL may include a facetted field mirror device 10 and a facetted pupil mirror device 11.
  • the faceted field mirror device 10 and faceted pupil mirror device 11 together provide the radiation beam B with a desired cross-sectional shape and a desired angular distribution.
  • the radiation beam B passes from the illumination system IL and is incident upon the patterning device MA held by the support structure MT.
  • the patterning device MA reflects and patterns the radiation beam B.
  • the illumination system IL may include other mirrors or devices in addition to or instead of the faceted field mirror device 10 and faceted pupil mirror device 11.
  • the projection system PS comprises a plurality of mirrors 13, 14 which are configured to project the radiation beam B onto a substrate W held by the substrate table WT.
  • the projection system PS may apply a reduction factor to the radiation beam, forming an image with features that are smaller than corresponding features on the patterning device MA. A reduction factor of 4 may for example be applied.
  • the projection system PS has two mirrors 13, 14 in Figure 1, the projection system may include any number of mirrors (e.g. six mirrors).
  • the radiation sources SO shown in Figure 1 may include components which are not illustrated.
  • a spectral filter may be provided in the radiation source.
  • the spectral filter may be substantially transmissive for EUV radiation but substantially blocking for other wavelengths of radiation such as infrared radiation.
  • Figure 3 is similar to Figures 2a to 2d and depicts the evaporation of a tin droplet 132 in the EUV cone in the illuminator, that generates anisotropic tin vapor cloud 140.
  • the radiation source SO, 100 includes an aperture cone 120 and a scanner/illuminator 200, also referred to as an illumination system IL.
  • Tin particle 130, 131, 132 evaporates as it propagate in EUV beam 150 over multiple EUV pulses.
  • a dynamic gas lock 110 maintains a pressure differential between the source and the scanner, and provides a stopping flow 111 and collateral outflow 112.
  • Tin vapour expansion 140 after a pulse of EUV around the droplet 132 is not uniform as more vapour is generated towards the intermediate focus-facing rear hemisphere of the droplet 132.
  • Energy tin atoms from the vapor cloud propagate through low pressure hydrogen without much deflection and deposit metallic tin (143, 142) on components of the source and components of the scanner 120, 210, alternatively, energetic tin atoms can scatter / bounce (not shown).
  • Only a small amount of tin vapour propagates directly in the solid angle of the EUV radiation NA1, NA2 and can directly reach optical component 220, such as a field facet or pupil facet mirror. Most of the mass of the tin droplet is lost within the first 1 to 10 mm (H) of entering the illumination system IL, with additional but minor tin mass lost past 10 mm to 100 mm of entering the illumination system IL.
  • Figure 4 is also similar to Figure 3 and depicts how tin can contaminate optical elements.
  • tin atoms of the tin contamination are converted to volatile tin hydrides 342, 343, such as stannane when they reside on room temperature steel or copper walls. This is even the case when there is sub-monolayer amount of tin contamination.
  • Such tin hydrides are volatile and diffuse 300, 310 away from the surface on which they have been deposited and meet with the dynamic gas lock outflow 112 and are directed towards the optical element 310 within the EUV cone where it cannot be intercepted.
  • the getter material is provided on surface 401 facing the EUV beam as this is where the majority of tin vapour is generated. Due to the getter material’s affinity for tin, tin will be adsorbed to the surface 401 and retained in place. Whilst monolayers greater than around 3 can be etched by the EUV plasma, the getter material is still able to hold onto the adsorbed tin.
  • the hot surface offsets any generation of SnH by thermal decomposition of the stannane as well as other tin hydrides, such as SnH, SnFE. and SnHs, and thereby stabilises multiple monolayers of tin 510, 520 on the surface 502, even in the presence of EUV hydrogen plasma.
  • the surface can be any hydrogen plasma compatible material, which is a material which is not degraded to a damaging extent over the expected lifetime of the debris trap structure and which does not contaminate the illumination system, such as stainless steel or molybdenum, but is preferably ruthenium due to the additional stability provided for adsorbed tin.
  • the temperature of the surface which may be a getter material for tin, may be from around 100°C to around 232°C if it is desired to keep the tin as a solid, although the surface may be heater to higher temperatures, such as around 300°C, 400°C or 500°C since the rate of tin sublimation at such a temperature is still less than 0. 1 monolayers per year.
  • Figure 7 is similar to Figure 5, albeit the surface 601 is corrugated.
  • a heater may be provided, similar to the embodiment of Figure 6, in order to heat the surface to thermally decompose tin hydrides.
  • the surface 601 may comprise a getter material for tin.
  • the corrugations are depicted as being triangular in shape, but they may be other shapes, such as steps or waves.
  • the corrugations not only provide a larger surface area to adsorb tin contamination, but also assists in re-capturing high energy tin droplets or particles that may bounce off the surfaces before losing enough energy to allow them to be captured.
  • the corrugations may have a depth K and a separation M.
  • the aspect ratio (K/M) may be 2 or more, preferably 10 or more. Since the debris trap structure surrounds the EUV cone, the corrugations may be provided as concentric rings which extend around the inner surface of the debris trap structure.
  • FIG 8 depicts an embodiment of the present disclosure in which the debris trap structure includes a plurality of plates 700, 710.
  • the plates 700, 710 may include integrated heaters and power supply 701, 702, 703 704 that stabilise deposited tin even in excess of a few monolayers 720.
  • the plates are substantially perpendicular to a central axis of the EUV cone, but can be angled upwardly or downwardly relative to the perpendicular position depicted.
  • Figure 9 is similar to Figure 8 and also includes a cross-flow of a dry, oxygen-free gas, such as nitrogen, hydrogen, noble gas or mixtures thereof.
  • a dry, oxygen-free gas such as nitrogen, hydrogen, noble gas or mixtures thereof.
  • the plates 710 of the debris trap structure 700 are heated to a temperature sufficient to sublimate the tin contamination, such as greater than 700°C, or around 1000°C.
  • a cross-flow of gas 750 is able to evacuate tin vapour contamination 740 from the plates where it is carried away in flow 735.
  • the pressure of the gas may be 100 Pa or more and may have a density of lOg/mol or more.
  • the gas is dry and oxygen-free to avoid oxidation of the tin to tin oxide, which is much less volatile than metallic tin at any temperature.
  • the heating to a temperature to sublimate the tin and carry it away in a cross-flow is performed in a cleaning mode rather than during imaging.
  • Figures 10a to 10c depict a debris trap structure 800 according to an embodiment of the present disclosure.
  • Figure 10a is a cross section of the debris trap structure 800 and it will be appreciated that the debris trap structure 800 is shaped to surround an EUV radiation cone in nominal use.
  • the debris trap structure 800 is in the shape of a ring 801 with an aperture 802 through which an EUV radiation cone passes in nominal use.
  • the aperture 802 includes an internal angled wall 803 which is shaped to substantially conform to the shape of the EUV radiation cone.
  • the internal wall 803 is depicted as being smooth, it may include corrugations in order to increase surface area.
  • the internal wall may comprise a getter material for tin, or may comprise a material which does not have a particular affinity for tin, such as copper, molybdenum or steel.
  • the ring 801 includes circumferential slot 804 configured to receive a heater 805.
  • An upper face 806 of the ring includes additional heaters 805’, 805”. It will be appreciated that the present invention is not particularly limited by the number and location of the heaters depicted in this figure and other numbers and locations of heaters may be used.
  • the ring 801 includes an open cavity 807 facing away from the upper face 806.
  • the cavity 807 has an inverted V-shaped cross section and includes concentric corrugations 808 configured to increase the surface area and to also deflect and trap tin particles or droplets.
  • the mounting and thermal break attachment 809 is configured to retain the debris trap structure in the desired location and serves to provide a gap between an exit of the intermediate focus and a proximal end of the ring 801.
  • the mounting and thermal break attachment 809 also provides thermal insulation to avoid unwanted transfer of heat between components. By providing a gap, some of the tin particles which make it through the intermediate focus can be captured within the open cavity 807. In use, the particles which make it through the intermediate focus are vapourized by EUV radiation pulses and the vapour deposits on the debris trap structure, primarily but not exclusively on the upper face 806, internal angled wall 803, and within the open cavity 807.
  • the debris trap structure is heated to a temperature of above 100°C to inhibit production of tin hydride and to thereby stabilise the metallic tin.
  • the present disclosure provides for a debris trap structure which includes one or both of a heater and a surface comprising a metal or metal alloy having an electronegativity higher than tin.
  • Heating the debris trap structure to above the temperature at which volatile tin hydrides thermally decompose allows for the suppression of volatile tin diffusing and being redeposited on sensitive optical elements.
  • providing a surface comprising a material having a higher electronegativity than tin similarly results in the breakdown of tin hydrides and the deposition and stabilisation of metallic tin.
  • the structure may be shaped to suppress forward scattering of debris, which additionally or alternatively, reduces the amount of contamination.

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  • Toxicology (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

L'invention concerne une structure de piège à débris pour une source EUV ou un appareil utilisant les EUV, la structure de piège à débris comprenant au moins un élément parmi : i) un dispositif de chauffage conçu pour chauffer une surface de la structure de piège à débris à une température supérieure ou égale à 100°C ; ii) une surface comprenant un matériau getter d'étain ou de lithium ; et/ou iii) une surface conçue pour supprimer la diffusion vers l'avant de débris. L'invention concerne en outre un système lithographique comprenant une source EUV et un appareil lithographique EUV comprenant une telle structure de piège à débris, un tel sous-système, une telle source EUV ou un tel appareil lithographique. L'invention concerne également un procédé permettant de réduire la contamination de matériau cible dans une source EUV ou dans un appareil utilisant les EUV, le procédé consistant à utiliser une structure de piège à débris et à chauffer une surface de la structure de piège à débris à au moins 100°C.
PCT/EP2025/057372 2024-04-02 2025-03-18 Appareil pour piéger des débris Pending WO2025209832A1 (fr)

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US202463572983P 2024-04-02 2024-04-02
US63/572,983 2024-04-02

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WO2025209832A1 true WO2025209832A1 (fr) 2025-10-09

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080011967A1 (en) * 2006-07-14 2008-01-17 Asml Netherlands B.V. Getter and cleaning arrangement for a lithographic apparatus and method for cleaning a surface
US20100141909A1 (en) * 2006-12-13 2010-06-10 Asml Netherlands B.V. Radiation system and lithographic apparatus
US20110186082A1 (en) * 2010-02-04 2011-08-04 Canon Kabushiki Kaisha Trapping device that traps particles in vacuum atmosphere
DE102015200327A1 (de) * 2015-01-13 2016-07-14 Carl Zeiss Smt Gmbh Anordnung zur Kontaminationsreduzierung in einer mikrolithographischen Projektionsbelichtungsanlage
US20170017150A1 (en) * 2010-06-25 2017-01-19 Asml Netherlands B.V. Pellicle for reticle and multilayer mirror
EP2321704B1 (fr) * 2008-09-11 2018-06-13 ASML Netherlands BV Source de rayonnement et appareil lithographique

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080011967A1 (en) * 2006-07-14 2008-01-17 Asml Netherlands B.V. Getter and cleaning arrangement for a lithographic apparatus and method for cleaning a surface
US20100141909A1 (en) * 2006-12-13 2010-06-10 Asml Netherlands B.V. Radiation system and lithographic apparatus
EP2321704B1 (fr) * 2008-09-11 2018-06-13 ASML Netherlands BV Source de rayonnement et appareil lithographique
US20110186082A1 (en) * 2010-02-04 2011-08-04 Canon Kabushiki Kaisha Trapping device that traps particles in vacuum atmosphere
US20170017150A1 (en) * 2010-06-25 2017-01-19 Asml Netherlands B.V. Pellicle for reticle and multilayer mirror
DE102015200327A1 (de) * 2015-01-13 2016-07-14 Carl Zeiss Smt Gmbh Anordnung zur Kontaminationsreduzierung in einer mikrolithographischen Projektionsbelichtungsanlage

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"APPARATUS TO TRAP DEBRIS", vol. 721, no. 74, 12 April 2024 (2024-04-12), XP007152589, ISSN: 0374-4353, Retrieved from the Internet <URL:https://www.researchdisclosure.com/database/RD721074> [retrieved on 20240412] *

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