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WO2025205853A1 - Diaphragme piézoélectrique et dispositif de vibration piézoélectrique - Google Patents

Diaphragme piézoélectrique et dispositif de vibration piézoélectrique

Info

Publication number
WO2025205853A1
WO2025205853A1 PCT/JP2025/011875 JP2025011875W WO2025205853A1 WO 2025205853 A1 WO2025205853 A1 WO 2025205853A1 JP 2025011875 W JP2025011875 W JP 2025011875W WO 2025205853 A1 WO2025205853 A1 WO 2025205853A1
Authority
WO
WIPO (PCT)
Prior art keywords
vibration
outer frame
thickness
vibrating
piezoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/JP2025/011875
Other languages
English (en)
Japanese (ja)
Inventor
裕章 大森
優太 安齋
宏樹 藤原
直哉 久木田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daishinku Corp
Original Assignee
Daishinku Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daishinku Corp filed Critical Daishinku Corp
Publication of WO2025205853A1 publication Critical patent/WO2025205853A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz

Definitions

  • the present invention relates to a piezoelectric vibration plate and a piezoelectric vibration device equipped with the same.
  • sandwich-structure piezoelectric vibration devices have been known as piezoelectric vibration devices suitable for miniaturization and low height.
  • the housing of a sandwich-structure piezoelectric vibration device is constructed as a roughly rectangular parallelepiped package.
  • This package is composed of first and second sealing members made of, for example, glass or quartz, and a piezoelectric vibration plate with excitation electrodes formed on both main surfaces.
  • the first and second sealing members are stacked and bonded via the piezoelectric vibration plate.
  • the vibration portion of the piezoelectric vibration plate located inside the package (internal space), is hermetically sealed by the first and second sealing members (see, for example, Patent Document 1).
  • the piezoelectric vibration plate is configured to include a vibration section with excitation electrodes formed on its main surface, an outer frame section that surrounds the outer peripheral wall of the vibration section, a holding section that connects the outer peripheral wall of the vibration section to the inner peripheral wall of the outer frame section, and a cutout section formed by cutting out between the vibration section and the outer frame section in the thickness direction.
  • the device is configured to be compact while being less susceptible to the effects of external stress transmitted from the outer frame section and vibration leakage of vibration energy from the vibration section.
  • acceleration sensitivity evaluation in which acceleration that vibrates at a predetermined frequency in three axial directions (X, Y, and Z) of the piezoelectric vibration device is applied and the presence or absence of noise (spurious) signals that are generated as a result is measured.
  • Piezoelectric vibration devices that satisfy these characteristics are in demand.
  • acceleration sensitivity evaluations for example, G-sensitivity, etc.
  • the present invention was made in consideration of the above-mentioned circumstances, and aims to provide a piezoelectric vibration plate that can suppress deflection in the thickness direction while suppressing the effects of external stress, etc., and a piezoelectric vibration device equipped with the same.
  • the present invention provides the means for solving the above-mentioned problems as follows.
  • the present invention is a piezoelectric diaphragm that vibrates in a thickness-shear manner, and is configured to include a vibrating portion having an excitation electrode formed on its main surface, an outer frame portion surrounding the vibrating portion, a retaining portion connecting the vibrating portion and the outer frame portion, and a cutout portion formed by cutting out in the thickness direction between the vibrating portion and the outer frame portion, wherein the retaining portion has a pair of vibration retaining portions along a first imaginary line in a first direction passing through the center point of the vibrating portion in a planar view, and a pair of outer frame retaining portions that extend in a direction different from the first direction and connect each vibration retaining portion to two points on the outer frame portion, each vibration retaining portion connects the vibrating portion and the outer frame retaining portion, and the outer frame retaining portion connects the vibration retaining portion and the outer frame portion, satisfying the relationship: thickness of the outer frame portion > thickness of
  • the present invention relates to a piezoelectric diaphragm that vibrates in a thickness-shear manner, and is configured to include a vibrating portion having an excitation electrode formed on a main surface thereof, an outer frame portion that surrounds an outer peripheral wall of the vibrating portion, a holding portion that connects the outer peripheral wall of the vibrating portion and the inner peripheral wall of the outer frame portion, and a cutout portion that is formed by cutting out in the thickness direction between the vibrating portion and the outer frame portion, and the holding portion includes a pair of vibration holding portions that are along a first imaginary straight line in a first direction that passes through the center point of the vibrating portion in a plan view, and a pair of vibration holding portions that extend in a direction different from the first direction and that connect each vibration holding portion to the
  • the vibration retaining portion has a pair of outer frame retaining portions that connect to two locations on the inner peripheral wall of the outer frame portion, and each vibration retaining portion connects the outer peripheral wall of the vibration portion to the outer frame retaining portion, and the
  • a pair of vibration retaining parts are connected to both ends of the vibrating part in the first direction, and outer frame retaining parts extending in the second axial direction are connected to four points on the outer frame part, which makes it possible to suppress the effects of external stress, etc., and to suppress deflection in the thickness direction of the piezoelectric diaphragm.
  • the vibration retaining parts along a first imaginary line in the first direction (e.g., the longitudinal direction) that passes through the center point of the vibrating part in a planar view, it is possible to effectively suppress displacement in the thickness direction of the vibrating part with as few points as possible.
  • FIG. 8 is a cross-sectional view taken along line X1-X1 in FIG.
  • FIG. 9 is a view equivalent to FIG. 4 of a quartz crystal plate according to another embodiment 1.
  • FIG. 10 is a view equivalent to FIG. 4 of a quartz crystal plate according to another embodiment 2.
  • FIG. 11 is a view equivalent to FIG. 5 of a quartz crystal plate according to another embodiment 2.
  • FIG. 12 is a view equivalent to FIG. 4 of a quartz crystal plate according to another embodiment 3.
  • FIG. FIG. 13 is a view equivalent to FIG. 5 of a quartz crystal plate according to another embodiment 3.
  • FIG. 10 is a view equivalent to FIG. 4 of a quartz crystal plate according to another embodiment 2.
  • FIG. 11 is a view equivalent to FIG. 5 of a quartz crystal plate according to another embodiment 2.
  • FIG. 12 is a view equivalent to FIG. 4 of a quartz crystal plate according to another embodiment 3.
  • FIG. 13 is a view equivalent to FIG. 5 of a quartz crystal plate according to another embodiment 3.
  • the quartz crystal unit 100 is configured to include a quartz crystal vibration plate (piezoelectric vibration plate) 10, a first sealing member (top sealing plate) 20, and a second sealing member (bottom sealing plate) 30.
  • the quartz crystal vibration plate 10 is bonded to the first sealing member 20, and the quartz crystal vibration plate 10 is bonded to the second sealing member 30, thereby forming a package with a substantially rectangular sandwich structure. That is, in the quartz crystal unit 100, the first sealing member 20 and the second sealing member 30 are bonded to each of the two main surfaces of the quartz crystal vibration plate 10, thereby forming an internal space (cavity) of the package, and the vibrating unit 11 (see FIGS. 4 and 5) is hermetically sealed in this internal space.
  • the crystal unit 100 has a package size of, for example, 1.0 x 0.8 mm, and is designed to be compact and low-profile. Furthermore, the crystal unit 100 is designed to be electrically connected to an external circuit board (not shown) via solder or the like.
  • the quartz crystal vibration plate 10 is a piezoelectric substrate made of quartz crystal, and both of its main surfaces (first main surface 101 and second main surface 102) are formed as flat, smooth surfaces (mirror-finished).
  • an AT-cut quartz crystal plate that performs thickness-shear vibration is used as the quartz crystal vibration plate 10.
  • both main surfaces 101 and 102 of the quartz crystal vibration plate 10 are in the XZ' plane. In this XZ' plane, the direction parallel to the short side (short side direction) of the quartz crystal vibration plate 10 is the X-axis direction, and the direction parallel to the long side (long side direction) of the quartz crystal vibration plate 10 is the Z'-axis direction.
  • AT-cut is a processing technique in which one of the three crystal axes of artificial quartz - the electrical axis (X-axis), the mechanical axis (Y-axis), and the optical axis (Z-axis) - is cut at an angle of approximately 35°15' around the X-axis with respect to the Z-axis.
  • the X-axis coincides with the crystal axis of the quartz.
  • the Y'-axis and Z'-axis coincide with axes tilted approximately 35°15' from the Y-axis and Z-axis, respectively, of the quartz crystal (this cutting angle may be changed slightly within the range required to adjust the frequency-temperature characteristics of the AT-cut quartz plate).
  • the Y'-axis and Z'-axis directions correspond to the cutting direction when the AT-cut quartz plate is cut. Note that the cutting angle may be slightly tilted depending on the characteristics.
  • a pair of excitation electrodes (first excitation electrode 111, second excitation electrode 112) are formed on both main surfaces 101, 102 of the quartz crystal vibration plate 10.
  • the quartz crystal vibration plate 10 is configured to include a vibration portion 11 formed in a substantially rectangular shape, an outer frame portion 12 surrounding the outer peripheral wall of the vibration portion 11, a holding portion 13 connecting the outer peripheral wall of the vibration portion 11 to the inner peripheral wall of the outer frame portion 12, and cutout portions 14a, 14b formed by cutting out the vibration portion 11 and the outer frame portion 12 in the thickness direction.
  • the inner peripheral wall of the outer frame portion 12 and the outer peripheral wall of the vibration portion 11 are both formed in a rectangular shape in a plan view.
  • the long side direction of the quartz crystal vibration plate 10 in a plan view is perpendicular to the long side direction of the inner peripheral wall of the outer frame portion 12 in a plan view, and the long side direction of the inner peripheral wall of the outer frame portion 12 in a plan view is aligned in the same direction as the long side direction of the vibration portion 11 in a plan view.
  • the outer frame portion 12 of the quartz crystal vibration plate 10 does not have through-holes or castellations.
  • the first excitation electrode 111 is provided on the first main surface 101 side of the vibrating portion 11, and the second excitation electrode 112 is provided on the second main surface 102 side of the vibrating portion 11.
  • the first excitation electrode 111 and the second excitation electrode 112 are connected to lead-out wiring (lead-out electrodes) for connecting these excitation electrodes to external electrode terminals.
  • the first lead-out wiring 113 is led out from the first excitation electrode 111 toward the +X direction and connected to the connection bonding pattern 12b formed on the first main surface 101 side of the outer frame portion 12 via a holding portion 13 provided on the +X direction side of the vibrating portion 11.
  • the outer frame portion 12 is formed thicker than the holding portion 13, and a step is formed between the outer frame portion 12 and the holding portion 13.
  • the first lead-out wiring 113 is connected to the connection bonding pattern 12b via internal wiring 17 formed on the inner wall of the outer frame portion 12.
  • the connection junction pattern 12b is also connected to a connection junction pattern 12f formed on the second main surface 102 side of the outer frame portion 12 via internal wiring 17 formed on the inner peripheral wall of the outer frame portion 12.
  • the internal wiring 17 is provided on the inner peripheral wall of the outer frame portion 12 that is aligned in the X-axis direction and is on the +Z' direction side.
  • the second escape wiring 114 is extracted from the second excitation electrode 112 toward the -X direction and connected to the connection junction pattern 12e formed on the second main surface 102 of the outer frame portion 12 via the holding portion 13 provided on the -X direction side of the vibrating portion 11. As described above, a step is formed between the outer frame portion 12 and the holding portion 13, and the second escape wiring 114 is connected to the connection junction pattern 12e via the internal wiring 18 formed on the inner wall of the outer frame portion 12.
  • the internal wiring 18 is provided on the inner wall of the outer frame portion 12 that is aligned in the X-axis direction and on the -Z' direction side.
  • the first escape wiring 113 and the second escape wiring 114 are extracted in different directions, so the escape wirings in the vibrating portion 11 are not positioned opposite each other across the vibrating portion 11. This configuration eliminates unnecessary excitation by the escape wiring in the vibrating portion 11 and improves the stability of the characteristics.
  • Both major surfaces (first major surface 101, second major surface 102) of the quartz vibration plate 10 are provided with diaphragm-side sealing portions for bonding the quartz vibration plate 10 to the first sealing member 20 and the second sealing member 30.
  • a diaphragm-side first bonding pattern 121 is formed as the diaphragm-side sealing portion of the first major surface 101
  • a diaphragm-side second bonding pattern 122 is formed as the diaphragm-side sealing portion of the second major surface 102.
  • the diaphragm-side first bonding pattern 121 and the diaphragm-side second bonding pattern 122 are provided on the outer frame portion 12 and are formed in a ring shape in a planar view.
  • the outer peripheral edge of the diaphragm-side first bonding pattern 121 is provided close to the outer peripheral edge of the first major surface 101 of the quartz vibration plate 10 (outer frame portion 12).
  • the outer peripheral edge of the diaphragm-side second bonding pattern 122 is provided close to the outer peripheral edge of the second major surface 102 of the quartz vibration plate 10 (outer frame portion 12).
  • the first diaphragm-side bonding pattern 121 and the second diaphragm-side bonding pattern 122 are connected via internal wiring 19 formed on the inner peripheral wall of the outer frame portion 12.
  • the internal wiring 19 is provided on the inner peripheral wall of the outer frame portion 12 that is along the Z'-axis direction and on the inner peripheral wall on the -X direction side, and is perpendicular to the inner peripheral wall on which the above-mentioned internal wiring 17, 18 is provided. Note that a connection bonding pattern 12a is formed on the first main surface 101 side of the outer frame portion 12.
  • the first sealing member 20 is a rectangular parallelepiped substrate formed from a single AT-cut quartz crystal plate.
  • the second main surface 202 of this first sealing member 20 (the surface that bonds to the quartz crystal vibrating plate 10) is formed as a flat, smooth surface (mirror-finished).
  • the first sealing member 20 does not have a vibrating portion, using an AT-cut quartz crystal plate like the quartz crystal vibrating plate 10 allows the quartz crystal vibrating plate 10 and the first sealing member 20 to have the same thermal expansion coefficient, thereby suppressing thermal deformation of the quartz crystal unit 100.
  • the X-, Y-, and Z'-axes of the first sealing member 20 are also aligned in the same direction as those of the quartz crystal vibrating plate 10.
  • the first sealing member 20 is configured without through-holes or castellations, significantly shortening the manufacturing process for the first sealing member 20. Furthermore, eliminating a path for moisture to penetrate from the first main surface 201 of the first sealing member 20 into the internal space of the package improves corrosion resistance.
  • a sealing member-side first bonding pattern 24 is formed on the second main surface 202 of the first sealing member 20 as a sealing member-side first sealing portion for bonding to the quartz crystal vibration plate 10.
  • the sealing member-side first bonding pattern 24 is formed in a ring shape in a plan view.
  • the outer peripheral edge of the sealing member-side first bonding pattern 24 is provided close to the outer peripheral edge of the second main surface 202 of the first sealing member 20.
  • connection bonding patterns 22a and 22b are formed on the second main surface 202 of the first sealing member 20 for bonding to the connection bonding patterns 12a and 12b formed on the first main surface 101 of the outer frame portion 12 of the quartz crystal vibration plate 10.
  • the second sealing member 30 is a rectangular parallelepiped substrate formed from a single AT-cut quartz crystal plate, and the first main surface 301 of this second sealing member 30 (the surface that bonds to the quartz crystal vibration plate 10) is formed as a flat, smooth surface (mirror-finished). It is desirable that the second sealing member 30 also uses an AT-cut quartz crystal plate like the quartz crystal vibration plate 10, and that the orientations of the X-axis, Y-axis, and Z'-axis are the same as those of the quartz crystal vibration plate 10.
  • the external electrode terminals 32 are provided on the second main surface 302 of the second sealing member 30 (the outer main surface that does not face the quartz crystal vibration plate 10) and electrically connect to an external circuit board provided outside the quartz crystal vibrator 100.
  • the external electrode terminals 32 are formed in a roughly rectangular shape and are located at each of the four corners (corner portions) of the second main surface 302 of the second sealing member 30.
  • the external electrode terminals 32 are located in positions that overlap the outer frame portion 12 of the quartz crystal vibration plate 10 described above in a plan view.
  • the second sealing member 30 has three through holes 33a, 33b, and 33c formed therein that penetrate between the first main surface 301 and the second main surface 302.
  • the through holes 33a, 33b, and 33c are provided in the four corner (corner) regions of the second sealing member 30.
  • Penetration electrodes are formed along the inner wall surfaces of the through holes 33a, 33b, and 33c, respectively, to ensure electrical continuity between the electrodes formed on the first main surface 301 and the second main surface 302.
  • the penetrating electrodes formed on the inner wall surfaces of the through holes 33a, 33b, and 33c provide electrical continuity between the electrodes (connection bonding patterns) formed on the first main surface 301 and the external electrode terminals 32 formed on the second main surface 302.
  • the central portion of each of the through holes 33a, 33b, and 33c is a hollow through portion that penetrates between the first main surface 301 and the second main surface 302.
  • the quartz crystal vibrating plate 10 and the first sealing member 20 are diffusion bonded together with the diaphragm-side first bonding pattern 121 and the sealing member-side first bonding pattern 24 superimposed, and the quartz crystal vibrating plate 10 and the second sealing member 30 are diffusion bonded together with the diaphragm-side second bonding pattern 122 and the sealing member-side second bonding pattern 31 superimposed, producing a sandwich-structured package as shown in FIG. 1.
  • connection bonding patterns are also diffusion bonded while overlapping each other.
  • electrical conductivity is achieved between the first excitation electrode 111, the second excitation electrode 112, and the external electrode terminals 32, 32 in the quartz crystal unit 100.
  • the first excitation electrode 111 is connected to the external electrode terminal 32 via the first extraction wiring 113, internal wiring 17, connection bonding pattern 12f, connection bonding pattern 34b, and the through-hole 33b through the through-hole electrode.
  • the second excitation electrode 112 is connected to the external electrode terminal 32 via the second extraction wiring 114, internal wiring 18, connection bonding pattern 12e, connection bonding pattern 34a, and the through-hole 33a through the through-hole electrode.
  • the various bonding patterns are preferably formed by stacking multiple layers on the quartz crystal plate, with a Ti (titanium) layer and an Au (gold) layer formed from the bottom layer onwards by vapor deposition or sputtering. Furthermore, if the other wiring and electrodes formed on the quartz crystal unit 100 have the same configuration as the bonding patterns, this is preferable as the bonding patterns, wiring and electrodes can be patterned simultaneously.
  • the sealing portions (seal paths) 15, 16 that hermetically seal the vibrating portion 11 of the quartz crystal vibrating plate 10 are formed in an annular shape in a planar view.
  • the seal path 15 is formed by diffusion bonding (Au-Au bonding) the above-mentioned diaphragm-side first bonding pattern 121 and the sealing member-side first bonding pattern 24.
  • the outer edge shape of the seal path 15 is formed in a roughly rectangular shape, and the outer periphery of the seal path 15 is positioned close to the outer periphery of the package.
  • the seal path 16 is formed by diffusion bonding (Au-Au bonding) the above-mentioned diaphragm-side second bonding pattern 122 and the sealing member-side second bonding pattern 31.
  • the outer edge shape of the seal path 16 is formed in a roughly rectangular shape, and the outer periphery of the seal path 16 is positioned close to the outer periphery of the package.
  • the seal paths 15, 16 are not electrically connected to the electrical conduction path between the first and second excitation electrodes 111, 112 and the external electrode terminals 32, 32.
  • seal path 15 is connected to seal path 16 via internal wiring 19, and seal path 16 is further connected to earth (ground connection, using part of external electrode terminal 32) via the penetrating electrode of through hole 33c.
  • the thickness of the seal path 15 between the first sealing member 20 and the quartz crystal plate 10 is 1.00 ⁇ m or less
  • the thickness of the seal path 16 between the second sealing member 30 and the quartz crystal plate 10 is 1.00 ⁇ m or less (specifically, 0.15 ⁇ m to 1.00 ⁇ m for the Au-Au bonding of this embodiment).
  • the thickness of a conventional metal paste sealing material using Sn is 5 ⁇ m to 20 ⁇ m.
  • the holding portion 13 has a pair of vibration holding portions 13a along a first virtual straight line L1 in a first direction (X-axis direction) passing through the center point C1 in a planar view of the vibration portion 11, and a pair of outer frame holding portions 13b extending in a direction different from the first direction (Z'-axis direction) and connecting each vibration holding portion 13a to two points on the inner peripheral wall of the outer frame portion 12, and each vibration holding portion 13a is connected to the vibration portion 11.
  • the outer peripheral wall of the vibrating portion 11 is connected to the outer frame holding portion 13b, and the outer frame holding portion 13b connects the vibration holding portion 13a to the inner peripheral wall of the outer frame portion 12.
  • One end of holding portion 13 is connected to the central portion in the thickness direction of outer peripheral portion 11b of vibrating portion 11, and the other end of holding portion 13 is connected to the central portion in the thickness direction of the inner peripheral wall of the outer frame portion 12.
  • FIG. 8 does not show the first excitation electrode 111, second excitation electrode 112, first escape wiring 113, second escape wiring 114, etc., which are formed on the first main surface 101 and second main surface 102 of the quartz crystal vibrating plate 10.
  • retaining portions 13, which are roughly T-shaped in plan view, are provided on the +X and -X sides of the vibration portion 11, which is rectangular in plan view.
  • the retaining portions 13 are arranged symmetrically with respect to the first imaginary line L1 and second imaginary line L2.
  • the retaining portion 13 is configured to integrally include a vibration retaining portion 13a that extends linearly from the outer peripheral wall of the vibration portion 11 along the first imaginary line L1, and an outer frame retaining portion 13b that extends linearly parallel to the second imaginary line L2.
  • the first imaginary line L1 is a straight line connecting the center point (center of gravity) C1 of the vibration portion 11 in plan view and the center of each outer frame retaining portion 13b in the extension direction (Z'-axis direction).
  • the vibration retaining portion 13a and the outer frame retaining portion 13b are connected in directions perpendicular to each other.
  • the vibration retaining portion 13a extends toward the outer frame retaining portion 13b along the long side of the inner wall of the outer frame portion 12 in a planar view
  • the outer frame retaining portion 13b extends toward the inner wall of the outer frame portion 12 along the short side of the inner wall of the outer frame portion 12 in a planar view.
  • One end of the vibration retaining portion 13a is connected to the center of the vibrating portion 11 in the Z' axis direction
  • the other end of the vibration retaining portion 13a is connected to the center of the outer frame retaining portion 13b in the Z' axis direction.
  • the outer frame retaining portion 13b is connected to the four corner areas of the inner wall of the outer frame portion 12 in a planar view. One end of the outer frame holding portion 13b is connected to the inner wall of the outer frame portion 12 on the +Z' side, and the other end of the outer frame holding portion 13b is connected to the inner wall of the outer frame portion 12 on the -Z' side.
  • Both vibration retaining portion 13a and outer frame retaining portion 13b are formed linearly in a planar view. Vibration retaining portion 13a is formed to be wider and shorter in a planar view than outer frame retaining portion 13b. Specifically, the length of vibration retaining portion 13a along the X-axis direction is shorter than the length of outer frame retaining portion 13b along the Z'-axis direction. The width of vibration retaining portion 13a along the Z'-axis direction is wider than the width of outer frame retaining portion 13b along the X-axis direction.
  • the holding portion 13 configured as described above divides the cutout formed between the outer peripheral wall of the vibrating portion 11 and the inner peripheral wall of the outer frame portion 12 into multiple (four in this case) portions in plan view.
  • cutout portion 14a is the portion surrounded by the outer peripheral wall of the vibrating portion 11, the inner peripheral wall of the outer frame portion 12, and the vibration holding portion 13a and outer frame holding portion 13b of the holding portion 13, and is formed in a roughly U-shape in plan view.
  • Cutout portion 14b is the portion surrounded by the inner peripheral wall of the outer frame portion 12 and the outer frame holding portion 13b of the holding portion 13, and is formed in a straight line extending along the Z'-axis direction in plan view.
  • the vibrating section 11 is formed so that the thickness T1 of the inner central portion 11a is thinner than the thickness T2 of the outer peripheral portion 11b.
  • the holding portion 13 is formed so that the vibration holding portion 13a and the outer frame holding portion 13b have approximately the same thickness, T3.
  • the thickness T4 of the outer frame portion 12 is greater than the thickness of the vibrating section 11 and the thickness T3 of the holding portion 13.
  • one end of the holding portion 13 (the end of the vibration holding portion 13a) is connected to the center portion in the thickness direction of the outer peripheral portion 11b of the vibrating section 11.
  • the other end of the holding portion 13 (the end of the outer frame holding portion 13b) is connected to the center portion in the thickness direction of the inner peripheral wall of the outer frame portion 12.
  • the cross-sectional shapes of the vibrating section 11, holding portion 13, and outer frame portion 12 taken along X1-X1 in FIG. 4 are vertically symmetrical.
  • a pair of vibration retaining portions 13a are connected to both ends of the vibrating portion 11 in the X-axis direction, and outer frame retaining portions 13b extending in the Z'-axis direction are connected to four locations on the outer frame portion 12.
  • the outer frame holding portion 13b has a shape that is line-symmetrical with respect to a first imaginary line L1 that passes through the center point C1 of the vibrating portion 11 in a planar view, and a shape that is line-symmetrical with respect to a second imaginary line L2 that passes through the center point C1 of the vibrating portion 11 in a planar view and intersects (is perpendicular to) the first imaginary line L1.
  • the vibration holding portion 13a along the first imaginary line L1 that connects the center point C1 of the vibrating portion 11 in a planar view and the center of the extension direction (Z'-axis direction) of each outer frame holding portion 13b, the stress transmitted from the outer frame holding portion 13b to the vibrating portion 11 can be uniformed, and to prevent the stress from being transmitted to the vibrating portion 11 in an unbalanced state.
  • the inner wall of the outer frame portion 12 and the outer wall of the vibrating portion 11 are both rectangular in plan view, and are arranged so that the long side direction of the quartz vibration plate 10 in plan view (here, the Z' axis direction) and the long side direction of the inner wall of the outer frame portion 12 in plan view (here, the X axis direction) are perpendicular to each other, and each vibration retaining portion 13a extends toward the outer frame retaining portion 13b along the long side direction of the inner wall of the outer frame portion 12 in plan view, connecting the outer wall of the vibrating portion 11 and the outer frame retaining portion 13b, and the outer frame retaining portion 13b extends toward the inner wall of the outer frame portion 12 along the short side direction of the inner wall of the outer frame portion 12 in plan view (here, the Z' axis direction), connecting the inner wall of the outer frame portion 12 and the vibration retaining portion 13a in the four corner areas of the inner wall of the outer frame portion 12 in plan view.
  • the first and second escape wiring 113 and 114 are formed on the holding portion 13 of the quartz crystal vibration plate 10, and no escape wiring is formed on the first sealing member 20 or the second sealing member 30. This makes it possible to route the first and second escape wiring 113 and 114 along the shortest possible route. This allows the length of the first and second escape wiring 113 and 114 to be shortened, thereby reducing the resulting parasitic capacitance.
  • each vibration retaining portion 13a is connected to the center of the opposing short sides of the vibrating portion 11, so deflection of the vibrating portion 11 can be effectively suppressed with a small number of connection points.
  • the other end of each vibration retaining portion 13a is connected to the center of the outer frame retaining portion 13b, so the balance of the retaining portion 13 can be easily maintained and deflection of the vibrating portion 11 can be effectively suppressed.
  • each vibration retaining portion 13a is wider and shorter in plan view than the outer frame retaining portion 13b. Therefore, by making the outer frame retaining portion 13b, which has more connection points, longer and thinner, and the vibration retaining portion 13a, which has fewer connection points, shorter and thicker, the strength of the retaining portion 13 can be ensured without increasing the occupied area in plan view.
  • first and second extraction wiring 113 and 114 are formed to extend from the first excitation electrode 111 and second excitation electrode 112 of the vibration portion 11 to the outer frame portion 12 via the holding portion 13, and the vibration holding portion 13a of the holding portion 13 is connected to the end of the outer peripheral portion 11b of the vibration portion 11 in the X-axis direction.
  • a step (step portion) 11c is formed between the central portion 11a and outer peripheral portion 11b of the vibration portion 11, and a step portion is formed between the outer peripheral portion 11b of the vibration portion 11 and the vibration holding portion 13a of the holding portion 13.
  • the vibration holding portion 13a is a relatively narrow area, making it more difficult to form the necessary wiring than the outer frame holding portion 13b.
  • breaks in the first escape routing 113 and the second escape routing 114 can be prevented.
  • the quartz crystal unit 100 equipped with the above-described quartz crystal vibration plate 10 also provides the same effects as the quartz crystal vibration plate 10 described above. That is, the effects of external stress, etc. can be suppressed, and deflection of the quartz crystal vibration plate 10 in the thickness direction can be suppressed. Furthermore, because the internal wiring 17 is not exposed on the outer surface of the package of the quartz crystal unit 100, the internal wiring 17 will not be broken or scraped off due to contact during assembly or transportation.
  • connection points (joint points) on the vibration retaining portion 13a and outer frame retaining portion 13b be an even number, and that the number of connection points on the outer frame retaining portion 13b be a multiple of the number of connection points on the vibration retaining portion 13a.
  • the thickness of the vibration retaining portion 13a of the retaining portion 13 was the same as the thickness of the outer frame retaining portion 13b, but the thickness of the vibration retaining portion 13a and the thickness of the outer frame retaining portion 13b may be different. Also, in the above embodiment, the thickness T3 of the retaining portion 13 was thicker than the thickness T1 of the central portion 11a of the vibrating portion 11, but the thickness T3 of the retaining portion 13 and the thickness T1 of the central portion 11a of the vibrating portion 11 may be the same.
  • no through holes are provided in the outer frame portion 12 of the quartz crystal vibration plate 10.
  • five through holes 12g, 12h may be formed in the quartz crystal vibration plate 10, penetrating between the first main surface 101 and the second main surface 102.
  • a connection bonding pattern 12a is formed on the first main surface 101 side, and a connection bonding pattern 12e is formed on the second main surface 102 side.
  • a through electrode for establishing electrical continuity between the electrodes formed on the first main surface 101 and the second main surface 102 is formed along the inner wall surface of each of the through-holes 12g, 12h.
  • the central portion of each of the five through holes 12g, 12h forms a hollow through portion that penetrates between the first main surface 101 and the second main surface 102.
  • the vibration holding portion 13a of the holding portion 13 extends along the Z'-axis direction
  • the outer frame holding portion 13b extends along the X-axis direction.
  • wide regions regions at both ends in the X-axis direction
  • narrow regions regions at both ends in the Z'-axis direction
  • the planar area of the cutout portion 14a formed between the vibrating portion 11, outer frame portion 12, and holding portion 13 can be made as small as possible, and the planar area of the vibrating portion 11 can be made as large as possible, ensuring as wide a vibration area as possible for the vibrating portion 11.
  • the internal wiring 17 is provided on the inner wall of the outer frame portion 12 that is aligned along the Z'-axis direction and is on the +X-direction side, while the internal wiring 18 is provided on the inner wall of the outer frame portion 12 that is aligned along the Z'-axis direction and is on the -X-direction side.
  • the internal wiring 17 and 18 are provided on the X-axis end face of the cutout portion 14a.
  • the anisotropy of the AT-cut quartz crystal plate causes the X-axis end face of the cutout portion 14a to have multiple, continuously sloped surfaces that are more gently inclined than the Z'-axis end face. Therefore, by forming the internal wiring 17, 18 on such an X-axis end face, the film thickness of the internal wiring 17, 18 can be ensured and breakage of the internal wiring 17, 18 can be prevented.
  • the vibration retaining portion 13a extends in a direction (Z'-axis direction) perpendicular to the vibration direction (X-axis direction) of the thickness-shear vibration of the vibrating portion 11, it is possible to reduce the frequency response sensitivity to external vibrations and suppress frequency fluctuations.
  • the vibration retaining portion 13a extends in the vibration direction (X-axis direction) of the thickness-shear vibration of the vibrating portion 11, the vibrating portion 11 may be displaced in response to external vibrations, making the capacitance more susceptible to fluctuations and resulting in greater frequency fluctuations; however, this embodiment can solve such problems.
  • the width of the vibration holding portion 13a of the holding portion 13 may be greater than the distance (gap) between the vibrating portion 11 of the cutout portion 14a and the outer frame holding portion 13b.
  • the width W1 in the X-axis direction of the vibration holding portion 13a connected to the +Z' side of the vibrating portion 11 is greater than the distance D1 between the vibrating portion 11 of the cutout portion 14a and the outer frame holding portion 13b (W1 > D1).
  • the width W2 in the X-axis direction of the vibration holding portion 13a connected to the -Z' side of the vibrating portion 11 is greater than the distance D2 between the vibrating portion 11 of the cutout portion 14a and the outer frame holding portion 13b (W2 > D2).
  • an AT-cut quartz crystal diaphragm was used as the piezoelectric diaphragm, but other piezoelectric diaphragms that perform thickness-shear vibration may also be used.
  • first sealing member 20 and the second sealing member 30 are formed from quartz plates, but this is not limited to this.
  • the first sealing member 20 and the second sealing member 30 may also be formed from, for example, glass or resin.
  • the number of external electrode terminals 32 on the second main surface 302 of the second sealing member 30 was four, but this is not limited to this and the number of external electrode terminals 32 may be, for example, two, six, or eight.
  • the present invention has been described as being applied to a quartz crystal resonator 100, this is not limited to this and the present invention may also be applied to a piezoelectric oscillator such as a quartz crystal oscillator.
  • parasitic capacitance can be reduced by routing the first escape wiring 113 and the second escape wiring 114 on the piezoelectric diaphragm along the shortest possible route, thereby ensuring a wide variable frequency range for the piezoelectric oscillator and improving the performance of the piezoelectric oscillator, which is particularly effective in VCXOs (voltage-controlled piezoelectric oscillators).
  • the electrical connection path from the pair of excitation electrodes (first excitation electrode 111, second excitation electrode 112) formed on the quartz crystal plate 10 to the external electrode terminal 32 on the second main surface 302 of the second sealing member 30 is formed by a through-hole penetrating the second sealing member 30 and a through-hole electrode within the through-hole.
  • this is not limited to this, and the present invention may also be applied to a configuration in which a castellation is provided on the outer end surface of the second sealing member 30 and electrical connection is made by an outer end electrode within the castellation.
  • Quartz crystal diaphragm pieoelectric diaphragm
  • Vibration portion 11a Central portion 11b Outer peripheral portion 12 Outer frame portion 13 Holding portion 13a Vibration holding portion 13b Outer frame holding portion 14a, 14b Cutout portions
  • First sealing member upper sealing plate
  • Second sealing member bottom sealing plate
  • Quartz crystal unit pieoelectric vibration device
  • First excitation electrode 112 Second excitation electrode
  • L1 First virtual straight line L2 Second virtual straight line T1 Thickness of central portion T2 Thickness of outer peripheral portion T3 Thickness of holding portion T4 Thickness of outer frame portion

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

La présente divulgation concerne, dans une membrane cristalline (10), une partie de maintien (13) qui a une paire de parties de maintien de vibration (13a) le long d'une première ligne droite virtuelle (L1) dans une direction d'axe X qui passe à travers un point central (C1) dans une vue en plan d'une partie de vibration (11), et une paire de parties de maintien de cadre externe (13b) qui s'étendent dans une direction d'axe Z' et relient respectivement les parties de maintien de vibration (13a) à deux points d'une partie de cadre externe (12). Chaque partie de maintien de vibration (13a) relie la partie de vibration (11) et la partie de maintien de cadre externe (13b), chaque partie de maintien de cadre externe (13b) relie la partie de maintien de vibration (13a) et la partie de cadre externe (12), et une relation dans laquelle l'épaisseur (T4) de la partie de cadre externe (12) est supérieure à l'épaisseur (T2) d'une partie périphérique externe (11b) de la partie de vibration (11), qui est supérieure à l'épaisseur (T3) de la partie de maintien (13) est satisfaite. Une extrémité de la partie de maintien (13) est reliée à une section centrale dans la direction de l'épaisseur d'une partie périphérique externe (11b) de la partie de vibration (11), et l'autre extrémité de la partie de maintien (13) est reliée à une section centrale dans la direction de l'épaisseur de la partie de cadre externe (12).
PCT/JP2025/011875 2024-03-28 2025-03-25 Diaphragme piézoélectrique et dispositif de vibration piézoélectrique Pending WO2025205853A1 (fr)

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JP2024-054789 2024-03-28

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08265094A (ja) * 1995-03-28 1996-10-11 Sumitomo Metal Ind Ltd 圧電共振子
JP2011030198A (ja) * 2009-06-30 2011-02-10 Nippon Dempa Kogyo Co Ltd 積層型の水晶振動子
JP2011045041A (ja) * 2009-07-23 2011-03-03 Nippon Dempa Kogyo Co Ltd 表面実装用の水晶振動子
JP2012074807A (ja) * 2010-09-28 2012-04-12 Seiko Epson Corp 圧電振動素子、表面実装型圧電振動子及び表面実装型圧電発振器
JP2015156583A (ja) * 2014-02-20 2015-08-27 株式会社大真空 圧電振動デバイス
WO2016121182A1 (fr) * 2015-01-29 2016-08-04 株式会社大真空 Plaque d'oscillation à cristal et dispositif d'oscillation à cristal
WO2016199645A1 (fr) * 2015-06-12 2016-12-15 株式会社大真空 Dispositif de vibration piézoélectrique
JP2021061494A (ja) * 2019-10-04 2021-04-15 日本電波工業株式会社 圧電振動子及びパッケージ

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08265094A (ja) * 1995-03-28 1996-10-11 Sumitomo Metal Ind Ltd 圧電共振子
JP2011030198A (ja) * 2009-06-30 2011-02-10 Nippon Dempa Kogyo Co Ltd 積層型の水晶振動子
JP2011045041A (ja) * 2009-07-23 2011-03-03 Nippon Dempa Kogyo Co Ltd 表面実装用の水晶振動子
JP2012074807A (ja) * 2010-09-28 2012-04-12 Seiko Epson Corp 圧電振動素子、表面実装型圧電振動子及び表面実装型圧電発振器
JP2015156583A (ja) * 2014-02-20 2015-08-27 株式会社大真空 圧電振動デバイス
WO2016121182A1 (fr) * 2015-01-29 2016-08-04 株式会社大真空 Plaque d'oscillation à cristal et dispositif d'oscillation à cristal
WO2016199645A1 (fr) * 2015-06-12 2016-12-15 株式会社大真空 Dispositif de vibration piézoélectrique
JP2021061494A (ja) * 2019-10-04 2021-04-15 日本電波工業株式会社 圧電振動子及びパッケージ

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