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WO2025203397A1 - Tampon, partie de maintien, procédé de transfert, procédé de fabrication de produit d'application électrique/électronique, et procédé de fabrication de dispositif d'affichage - Google Patents

Tampon, partie de maintien, procédé de transfert, procédé de fabrication de produit d'application électrique/électronique, et procédé de fabrication de dispositif d'affichage

Info

Publication number
WO2025203397A1
WO2025203397A1 PCT/JP2024/012514 JP2024012514W WO2025203397A1 WO 2025203397 A1 WO2025203397 A1 WO 2025203397A1 JP 2024012514 W JP2024012514 W JP 2024012514W WO 2025203397 A1 WO2025203397 A1 WO 2025203397A1
Authority
WO
WIPO (PCT)
Prior art keywords
holding
microstructure
stamp
adhesion prevention
adhesion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/JP2024/012514
Other languages
English (en)
Japanese (ja)
Inventor
小川敬典
須永誠寿郎
北川太一
小材利之
小野拓也
田中隼人
田中覚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Scivax Corp
Original Assignee
Shin Etsu Chemical Co Ltd
Scivax Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd, Scivax Corp filed Critical Shin Etsu Chemical Co Ltd
Priority to PCT/JP2024/012514 priority Critical patent/WO2025203397A1/fr
Priority to PCT/JP2025/012162 priority patent/WO2025206018A1/fr
Publication of WO2025203397A1 publication Critical patent/WO2025203397A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages

Definitions

  • the present invention relates to a stamp for transferring a microstructure, such as a semiconductor element, formed or arranged on a substrate to another substrate, a holder for the stamp, a transfer method using the stamp, a method for manufacturing electrical and electronic applied products using the transfer method, and a method for manufacturing displays.
  • microstructure transfer technology using stamps has been attracting attention as a means of assembling electrical and electronic products using semiconductor elements.
  • this technology has been used to transfer one, multiple, or even tens of thousands of mini LEDs (LEDs with short sides of 100 ⁇ m or more to several hundred ⁇ m) or micro LEDs (with short sides of 100 ⁇ m or less, or even 50 ⁇ m or less) at a time, leading to active development of technology for manufacturing LED displays for signage, TVs, medical devices, in-vehicle devices, tablets, smartphones, smartwatches, and AR/VR.
  • This stamp has a convex holding portion 2 made of, for example, PDMS (polydimethylsiloxane) rubber.
  • Microstructures can be attached to the holding portion 2 and transferred from a supply substrate to a receiving substrate.
  • PDMS polydimethylsiloxane
  • microstructures may unintentionally adhere to portions of the stamp other than the holding portion 2.
  • microLEDs which can exist as contaminants in process environments such as cleaning solutions, or other foreign matter may adhere to the stamp during handling. In particular, when microLEDs adhere, their relatively large contact area with the stamp makes them extremely difficult to remove by cleaning.
  • the stamp of the present invention is a stamp for transferring a microstructure, and comprises: a base portion formed on a substrate; a holding portion formed on the base portion and having a holding surface for holding the microstructure; and an adhesion prevention portion formed around the holding portion on the base portion and having a plurality of convex portions with an adhesion prevention surface that is lower in height than the holding surface; and is characterized in that when the microstructure adheres to the adhesion prevention portion, the adhesion prevention portion is formed to have an adhesive strength that prevents the microstructure from coming off with a force less than its own weight.
  • the stamp of the present invention is a stamp for transferring a microstructure, and comprises a base portion formed on a substrate, a holding portion formed on the base portion and having a holding surface for holding the microstructure, and an adhesion prevention portion formed around the holding portion on the base portion and having a plurality of convex portions with an adhesion prevention surface that is lower in height than the holding surface, and is characterized in that the adhesion prevention portion has a shape such that when a flat surface having the same shape as the holding surface comes into contact with the adhesion prevention portion at any position, the total contact area T between the flat surface and the adhesion prevention surface is 1/100 or more times the area A of the holding surface.
  • the adhesion prevention portion has a shape such that when the adhesion prevention portion comes into contact with a flat surface of the same shape as the holding surface at any position, the total contact area T between the flat surface and the adhesion prevention surface is 1/2 or less of the area A of the holding surface.
  • the stamp of the present invention is a stamp for transferring a microstructure, and comprises a base portion formed on a substrate, a holding portion formed on the base portion and having a holding surface for holding the microstructure, and an adhesion prevention portion formed around the holding portion on the base portion and having a plurality of convex portions with an adhesion prevention surface that is lower in height than the holding surface, wherein the adhesion prevention portion is shaped so that when the microstructure and the adhesion prevention surface come into contact at any position, the total contact area T' with the adhesion prevention surface is at least 1/100 times the area A' of the microstructure.
  • the adhesion prevention portion has a shape such that when the microstructure and the adhesion prevention portion come into contact at any position, the total contact area T' with the adhesion prevention surface is at most 1/2 the area A' of the microstructure.
  • the stamp of the present invention is a stamp for transferring a microstructure, and comprises a base portion formed on a substrate, a holding portion formed on the base portion and having a holding surface for holding the microstructure, and an adhesion-inhibiting portion formed around the holding portion on the base portion and having a plurality of convex portions with an adhesion-inhibiting surface that is lower in height than the holding surface, characterized in that the stamp has a shape such that the product of the adhesive strength of the material constituting the adhesion-inhibiting surface and the area of the adhesion-inhibiting surface is 1/100 or more of the product of the adhesive strength of the material constituting the adhesion-inhibiting portion and the area of the adhesion-inhibiting portion.
  • the product of the adhesive strength of the material that makes up the adhesion-inhibiting surface and the area of the adhesion-inhibiting surface be 1/2 or less of the product of the adhesive strength of the material that makes up the adhesion-retaining portion and the area of the adhesion-retaining portion.
  • the stamp of the present invention is a stamp for transferring a microstructure, and is characterized by comprising a base portion formed on a substrate, and a holding portion formed on the base portion and having a holding surface for holding the microstructure, and having a plurality of convex portions on the side connecting the base portion and the holding surface, the convex portions having an adhesion-inhibiting surface that is lower in height than the holding surface.
  • the holding portion be in the shape of a cylinder, polygonal prism, truncated cone, truncated polygonal pyramid, or a shape with a partially chamfered edge.
  • the transfer method of the present invention can transfer a microstructure using the stamp of the present invention described above.
  • the manufacturing method of an electrical/electronic application product of the present invention includes a step of transferring a microstructure using the transfer method.
  • the manufacturing method of a display of the present invention includes a step of transferring a microstructure using the transfer method.
  • the holding part of the present invention is a holding part that is a component of a stamp for transferring a microstructure, and is characterized by having a holding surface for holding the microstructure and a side surface extending toward the surface opposite the holding surface, and having a plurality of protrusions on the side surface that have adhesion-inhibiting surfaces.
  • the transfer method of the present invention is a transfer method for transferring a microstructure using a stamp, and includes a pick-up step of holding the microstructure on the holding surface of the stamp, and a detachment step of detaching the microstructure from the holding surface of the stamp, wherein the stamp includes a base portion formed on a substrate, a holding portion formed on the base portion and having a holding surface for holding the microstructure, and an adhesion prevention portion formed around the holding portion on the base portion and having a plurality of convex portions with an adhesion prevention surface that is lower in height than the holding surface, and wherein when the microstructure adheres to the adhesion prevention portion, the adhesion prevention portion has an adhesive strength such that it will not come off with a force less than the weight of the microstructure itself.
  • the transfer method of the present invention is a method for transferring microstructures using a stamp that picks up a microstructure to be transferred and a microstructure other than the target
  • the stamp comprises a base portion formed on a substrate, a holding portion formed on the base portion and having a holding surface for holding the microstructure, and an adhesion suppression portion formed around the holding portion on the base portion and having a plurality of convex portions with an adhesion suppression surface that is lower in height than the holding surface, and includes a pick-up process for holding the microstructure to be transferred in the holding portion, and a transfer process for transferring the microstructure to be transferred held in the holding portion, wherein the adhesive force of the adhesion suppression portion is controlled so that the microstructure other than the target to be transferred is held in the adhesion suppression portion during the pick-up process, and the microstructure other than the target to be transferred held in the adhesion suppression portion continues to be held in the adhesion suppression portion during the transfer process.
  • the adhesion prevention unit 3 should be shaped so that the total contact area T is 1/100 or more, preferably 1/50 or more, and more preferably 1/30 or more, of the area A of the holding surface 21.
  • the adhesion prevention unit 3 should be shaped so that the total contact area T is 1/2 or less, preferably 1/5 or less, and more preferably 1/10 or less, of the area A of the holding surface 21.
  • the total contact area T can be adjusted by adjusting the number and arrangement of the protrusions 4 of the adhesion prevention section 3 and the shape and area of the adhesion prevention surface 41.
  • the adhesion prevention unit 3 can also be designed based on the area A' of the held surface 201 of the microstructure 200. As shown in FIG. 3 , the adhesion prevention unit 3 can be designed using the ratio of the total contact area T' between the held surface 201 and the adhesion prevention surface 41 to the area A' of the microstructure 200 when the microstructure 200 and the adhesion prevention unit 3 come into contact at any position. For example, to prevent the microstructure 200 from falling off the stamp 100 once it has adhered, the adhesion prevention unit 3 should be shaped so that the total contact area T' is 1/100 times or more, preferably 1/50 times or more, and more preferably 1/30 times or more of the area A' of the microstructure 200.
  • the adhesion prevention unit 3 should be shaped so that the total contact area T' is 1/2 times or less, preferably 1/5 times or less, and more preferably 1/10 times or less of the area A' of the microstructure 200.
  • the total contact area T' can be adjusted by adjusting the number of protrusions 4 on the adhesion prevention section 3 and the shape and area of the adhesion prevention surface 41.
  • the height of the adhesion-preventing surface 51 of the protrusions 5 is formed lower than the height of the holding surface 21. This makes it possible to prevent the microstructure 200 from accidentally adhering to the side surface 25 of the holding portion 2 when holding the microstructure 200 on the holding surface 21.
  • a stamp can be used that includes a base portion 1 formed on a substrate 10, a holding portion 2 formed on the base portion 1 and having a holding surface 21 for holding the microstructure 200, and an adhesion prevention portion 3 formed around the holding portion 2 on the base portion 1 and having a plurality of protrusions 4 with an adhesion prevention surface 41 that is lower in height than the holding surface 21, and that has an adhesive strength such that when the microstructure 200 adheres to the adhesion prevention portion 3, the adhesion prevention portion 3 will not come off with a force less than the weight of the microstructure 200 itself.
  • the detachment process is a process of detaching the microstructure 200 from the holding surface 21 of the stamp.
  • the detachment process can be performed by any method that can detach the microstructure 200 from the holding surface 21 of the stamp. For example, a film with an adhesive strength greater than that of the holding surface 21 of the stamp is formed on the receiving substrate. Then, in the pick-up process, the microstructure 200 held on the holding surface 21 of the stamp is pressed onto the receiving substrate. Subsequently, the stamp and receiving substrate are separated, thereby allowing the microstructure 200 held on the holding surface 21 of the stamp to be detached.
  • the removal process may be performed in any manner as long as it is capable of removing the microstructure 200 from the adhesion-inhibited surface 41, and wet cleaning or dry cleaning may be used, for example.
  • wet cleaning involves immersing the stamp in an isopropanol bath and applying ultrasonic waves.
  • dry cleaning involves supercritical CO2 cleaning. This makes it possible to remove the minute structures 200 that have adhered to the adhesion prevention surface 41.
  • Another transfer method of the present invention is a method for transferring a microstructure 200 using a stamp that picks up a microstructure 200 to be transferred and a microstructure 200 other than the microstructure 200 to be transferred, and is mainly composed of a pick-up process and a transfer process.
  • the stamp can be the stamp 100 of the present invention described above.
  • a stamp can be used that includes a base portion 1 formed on a substrate 10, a holding portion 2 formed on the base portion 1 and having a holding surface 21 for holding the microstructure 200, and an adhesion prevention portion 3 formed around the holding portion 2 on the base portion 1 and having a plurality of protrusions 4 with an adhesion prevention surface 41 that is lower in height than the holding surface 21.
  • the pick-up process is a process in which the microstructure 200 to be transferred is held by the holding unit 2.
  • the holding surface 21 of the stamp is brought into contact with one or more of the microstructures 200 arranged in large quantities on a supply substrate, and pressure is applied to adhere the microstructures 200 to the holding surface 21.
  • the microstructures 200 can be picked up and held on the holding surface 21 of the stamp.
  • the transfer process is a process of transferring the microstructure 200 to be transferred, which is held by the holding unit 2. For example, after picking up the microstructure 200 from a supply substrate, the microstructure 200 held by the holding unit 2 is transferred from the supply substrate to a receiving substrate, and the microstructure 200 is then placed on the receiving substrate.
  • the adhesive force of the adhesion prevention unit 3 is controlled so that the microstructure 200 other than the transfer target held by the adhesion prevention unit 3 continues to be held by the adhesion prevention unit 3 during the transfer process.
  • the adhesive force can be controlled, for example, by adjusting the adhesive force of the adhesion prevention surface, or, as with the stamp 100 of the present invention described above, by adjusting the number of protrusions 4 on the adhesion prevention unit 3 or the shape and area of the adhesion prevention surface 41.
  • the method may also include a removal step of removing microstructures 200 other than the transfer target that have been held by the adhesion prevention unit 3.
  • the adhesive force of the adhesion prevention unit 3 or the removal force of the removal step is controlled so that the microstructures 200 other than the transfer target are removed by the removal step.
  • the removal step may be performed in any manner that allows the microstructures 200 to be removed from the adhesion prevention surface 41, but wet cleaning or dry cleaning may be used, for example.
  • the transfer method of the present invention described above can be applied to manufacturing methods for electrical and electronic applied products, which include a step of transferring a microstructure using the transfer method.
  • the transfer method of the present invention described above can also be applied to manufacturing methods for displays, which include a step of transferring a microstructure using the transfer method.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)

Abstract

L'invention concerne un tampon, une partie de maintien de tampon, un procédé de transfert mettant en œuvre le tampon, un procédé de fabrication d'un produit d'application électrique/électronique à l'aide du procédé de transfert, et un procédé de fabrication d'un dispositif d'affichage, qui sont conçus pour éviter qu'une microstructure adhère à une surface autre que la partie de maintien de tampon, et, dans un cas où une microstructure adhère à la surface sans que cela soit souhaité, pour éviter que la microstructure tombe du tampon.　Un tampon 100 conçu pour transférer une microstructure 200 comprend : une partie de base 1 formée sur un substrat 10 ; une partie de maintien 2 formée au-dessus de la partie de base 1 et ayant une surface de maintien 21 prévue pour maintenir la microstructure 200 ; et une partie de suppression d'adhérence 3 qui est formée autour de la partie de maintien 2 et au-dessus de la partie de base 1 et qui a une pluralité de saillies 4 présentant une surface de suppression d'adhérence 41 inférieure en hauteur à la surface de maintien 21. Dans le cas où la microstructure 200 adhère à la partie de suppression d'adhérence 3, la partie de suppression d'adhérence 3 est formée de façon à avoir une force d'adhérence qui évite que la microstructure 200 tombe lorsqu'une force inférieure ou égale au poids de la microstructure lui est appliquée.
PCT/JP2024/012514 2024-03-27 2024-03-27 Tampon, partie de maintien, procédé de transfert, procédé de fabrication de produit d'application électrique/électronique, et procédé de fabrication de dispositif d'affichage Pending WO2025203397A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/JP2024/012514 WO2025203397A1 (fr) 2024-03-27 2024-03-27 Tampon, partie de maintien, procédé de transfert, procédé de fabrication de produit d'application électrique/électronique, et procédé de fabrication de dispositif d'affichage
PCT/JP2025/012162 WO2025206018A1 (fr) 2024-03-27 2025-03-26 Tampon, partie de maintien, procédé de transfert, procédé de fabrication de produit d'application électrique/électronique, procédé de fabrication de dispositif d'affichage et procédé de maintien sur tampon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2024/012514 WO2025203397A1 (fr) 2024-03-27 2024-03-27 Tampon, partie de maintien, procédé de transfert, procédé de fabrication de produit d'application électrique/électronique, et procédé de fabrication de dispositif d'affichage

Publications (1)

Publication Number Publication Date
WO2025203397A1 true WO2025203397A1 (fr) 2025-10-02

Family

ID=97215888

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/JP2024/012514 Pending WO2025203397A1 (fr) 2024-03-27 2024-03-27 Tampon, partie de maintien, procédé de transfert, procédé de fabrication de produit d'application électrique/électronique, et procédé de fabrication de dispositif d'affichage
PCT/JP2025/012162 Pending WO2025206018A1 (fr) 2024-03-27 2025-03-26 Tampon, partie de maintien, procédé de transfert, procédé de fabrication de produit d'application électrique/électronique, procédé de fabrication de dispositif d'affichage et procédé de maintien sur tampon

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/JP2025/012162 Pending WO2025206018A1 (fr) 2024-03-27 2025-03-26 Tampon, partie de maintien, procédé de transfert, procédé de fabrication de produit d'application électrique/électronique, procédé de fabrication de dispositif d'affichage et procédé de maintien sur tampon

Country Status (1)

Country Link
WO (2) WO2025203397A1 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100123268A1 (en) * 2008-11-19 2010-05-20 Etienne Menard Printing Semiconductor Elements by Shear-Assisted Elastomeric Stamp Transfer
US20160016399A1 (en) * 2014-07-20 2016-01-21 X-Celeprint Limited Apparatus and methods for micro-transfer-printing
JP2020520821A (ja) * 2017-09-26 2020-07-16 エルジー・ケム・リミテッド ディスプレイ画素転写用パターンフィルムおよびこれを用いたディスプレイの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100123268A1 (en) * 2008-11-19 2010-05-20 Etienne Menard Printing Semiconductor Elements by Shear-Assisted Elastomeric Stamp Transfer
US20160016399A1 (en) * 2014-07-20 2016-01-21 X-Celeprint Limited Apparatus and methods for micro-transfer-printing
JP2020520821A (ja) * 2017-09-26 2020-07-16 エルジー・ケム・リミテッド ディスプレイ画素転写用パターンフィルムおよびこれを用いたディスプレイの製造方法

Also Published As

Publication number Publication date
WO2025206018A1 (fr) 2025-10-02

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