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WO2025200186A1 - Cellule solaire et son procédé de préparation - Google Patents

Cellule solaire et son procédé de préparation

Info

Publication number
WO2025200186A1
WO2025200186A1 PCT/CN2024/105868 CN2024105868W WO2025200186A1 WO 2025200186 A1 WO2025200186 A1 WO 2025200186A1 CN 2024105868 W CN2024105868 W CN 2024105868W WO 2025200186 A1 WO2025200186 A1 WO 2025200186A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
solar cell
flow rate
sccm
aluminum oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/CN2024/105868
Other languages
English (en)
Chinese (zh)
Inventor
任勇
郭帅
张磊
吴炎炎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hengdian Group DMEGC Magnetics Co Ltd
Original Assignee
Hengdian Group DMEGC Magnetics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hengdian Group DMEGC Magnetics Co Ltd filed Critical Hengdian Group DMEGC Magnetics Co Ltd
Publication of WO2025200186A1 publication Critical patent/WO2025200186A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present application relates to the technical field of solar cells, and in particular to a solar cell and a method for preparing the same.
  • the refractive index of the silicon nitride film is ⁇ 2.3.
  • a method for preparing the solar cell as described above, wherein the method for preparing the passivation anti-reflection film structure in the solar cell comprises the following steps:
  • Deposition of aluminum oxide film The silicon wafer after oxidation annealing is placed in the deposition device, and the gas phase trimethylaluminum and Water is deposited as a cycle, and X cycles of deposition are performed, and X ⁇ 50;
  • the temperature is 220° C. to 300° C.
  • the time is 7 seconds to 15 seconds
  • the pressure is 25 torr to 50 torr
  • the flow rate of trimethylaluminum is 5000 sccm to 8000 sccm.
  • the time is 20s to 50s
  • the temperature is 500°C to 600°C
  • the pressure is 240Pa to 500Pa
  • the flow rate of silane is 1380sccm to 5000sccm
  • the flow rate of nitrous oxide is 6450sccm to 10000sccm.
  • the time is 20s to 50s
  • the temperature is 500°C to 60°C
  • the pressure is 230Pa to 500Pa
  • the flow rate of silane is 2500sccm to 5000sccm
  • the flow rate of ammonia is 7500sccm to 10000sccm.
  • the passivation anti-reflection film structure described in this application can significantly reduce the ultraviolet light attenuation of the solar cell, achieving an attenuation rate of less than 1% for 50kWh ultraviolet radiation, greatly improving the light irradiation stability of the solar cell, and effectively ensuring the photoelectric conversion efficiency of the solar cell.
  • the silicon nitride film when the number of layers of the silicon nitride film is one, the silicon nitride film is the first film; when the number of layers of the silicon nitride film is greater than one, the refractive index of each layer of the silicon nitride film can be the same or different, and the refractive index of each layer of the silicon nitride film except the first film can be ⁇ 2.3 or ⁇ 2.3, and there is no limitation on the stacking position relationship of the first film and other silicon nitride film layers.
  • the silicon nitride film 20 includes a first film 20a and a second film 20b, and the materials of the first film 20a and the second film 20b are both silicon nitride.
  • the refractive index of the first film 20a is ⁇ 2.3
  • the refractive index of the second film 20b can be ⁇ 2.3 or ⁇ 2.3
  • the number of layers of the first film 20a is defined as M
  • the number of layers of the second film 20b is defined as N
  • M and N satisfy the relationship: M ⁇ 1, N ⁇ 0.
  • the N/Si atomic ratio of each silicon nitride film layer can be the same or different, and the N/Si atomic ratio of each silicon nitride film layer except the first film can be ⁇ 4:1 or >4:1.
  • the N/Si atomic ratio of the first film decreases by 0.3:1 to 0.6:1, so as to further improve the ultraviolet light-induced degradation of the solar cell and ensure the photoelectric conversion efficiency of the solar cell.
  • the refractive index of any layer of the silicon nitride film is ⁇ 4.0, and the film has good optical/electrical properties and anti-reflection effects, effectively ensuring the maximum electrical power of the solar cell.
  • the temperature is 220° C. to 300° C.
  • the time is 6.5 s to 15 s
  • the pressure is 25 torr to 50 torr
  • the flow rate of water is 6000 sccm to 10000 sccm.
  • the water is purged for 4s to 15s, the temperature is 220°C to 300°C, the pressure is 25 torr to 50 torr, the flow rate of trimethylaluminum is 10,000 sccm to 15,000 sccm, and the flow rate of water is 10,000 sccm to 20,000 sccm.
  • vacuuming is performed and leak detection is performed.
  • the vacuuming time is 200s to 300s and the temperature is 500° C. to 600° C. to ensure the subsequent silicon oxide deposition effect.
  • the radio frequency power of the deposition equipment is 12600W to 25000W
  • the pulse on-off ratio is 2/30 to 50/100.
  • the radio frequency power of the deposition equipment is 14500W to 25000W
  • the pulse on-off ratio is 4/60 to 50/100.
  • the steps of first introducing silane and nitriding gas to deposit silicon oxide and then introducing silane and ammonia to nitride the silicon oxide can be repeated, and new process parameters, such as microwave power, temperature and gas flow ratio, can be adopted to achieve silicon nitride films with different N/Si atomic ratios and refractive indices, which is beneficial to improve the passivation effect of the passivation anti-reflection film, and improve the anti-reflection effect of the passivation anti-reflection film, thereby improving the photoelectric conversion efficiency of the solar cell.
  • the silicon wafer can be prepared into a solar cell through processes such as screen printing of metal electrodes and sintering.
  • Trimethylaluminum was introduced: the time was 4000 ms, the temperature was 220°C, the pressure was 25 torr, and the flow rate of trimethylaluminum was 5000 sccm;
  • reaction time is 3000 ms
  • reaction temperature is set at 220°C
  • reaction pressure is 25 torr
  • the cleaning time is 6500 ms, the cleaning temperature is 220°C, the cleaning pressure is 25 Torr, the trimethylaluminum flow rate is 10000 sccm, the water flow rate is 10000 sccm, the temperature is kept constant, the pressure is adjusted to 30 Torr, and the gas in the furnace tube is completely extracted;
  • the cleaning time is 4000ms, the cleaning temperature is 220°C, the pressure is 25torr, the flow rate of trimethylaluminum is 10000sccm, the flow rate of water is 10000sccm, the temperature is kept stable, the pressure is adjusted to 30torr, and the gas in the furnace tube is completely extracted.
  • Steps (6) to (11) constitute one cycle, and each cycle reaction deposits 0.1 nm of aluminum oxide, and a certain number of cycles are performed;
  • Vacuuming Vacuum the furnace tube for 200 s, at a temperature of 500 °C and a pressure of 0 Pa;
  • Pre-ventilation adjust the pressure to 130 Pa, the flow rate of monosilane to 1380 sccm, the flow rate of nitrous oxide to 6450 sccm, the time to 20 s, and the temperature to 500 °C;
  • Vacuuming time is 20s, temperature is 500°C, pressure is 0Pa, and excess reaction gas is pumped away;
  • Pre-aeration adjust the pressure to 230 Pa, the flow rate of monosilane to 2500 sccm, the flow rate of ammonia to 7500 sccm, the time to 20 s, and the temperature to 500 °C;
  • Example 5 The difference between Example 5 and Example 3 is that in the process (10) of step S2, the flow rate of monosilane is 2385 sccm, the time is 570 s, the temperature is 550° C., and the pressure is 260 Pa.

Landscapes

  • Formation Of Insulating Films (AREA)

Abstract

La présente invention concerne une cellule solaire. La cellule solaire comprend une structure de film antireflet de passivation (1), et la structure de film antireflet de passivation (1) comprend un film d'oxyde d'aluminium (10) et au moins une couche de film de nitrure de silicium (20), qui sont agencés séquentiellement de l'intérieur vers l'extérieur d'une manière empilée, l'épaisseur du film d'oxyde d'aluminium (10) étant supérieure ou égale à 5 nm ; le film de nitrure de silicium (20) comprend au moins un premier film (20a), et l'indice de réfraction du premier film (20a) est supérieur ou égal à 2,3 ; et lorsque l'épaisseur du film d'oxyde d'aluminium (10) est augmentée de 1 nm, l'indice de réfraction du premier film (20a) est augmenté de 0,03 à 0,06.
PCT/CN2024/105868 2024-03-27 2024-07-17 Cellule solaire et son procédé de préparation Pending WO2025200186A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202410355181.3 2024-03-27
CN202410355181.3A CN120730883A (zh) 2024-03-27 2024-03-27 太阳能电池及其制备方法

Publications (1)

Publication Number Publication Date
WO2025200186A1 true WO2025200186A1 (fr) 2025-10-02

Family

ID=97164880

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2024/105868 Pending WO2025200186A1 (fr) 2024-03-27 2024-07-17 Cellule solaire et son procédé de préparation

Country Status (2)

Country Link
CN (1) CN120730883A (fr)
WO (1) WO2025200186A1 (fr)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130186464A1 (en) * 2012-01-03 2013-07-25 Shuran Sheng Buffer layer for improving the performance and stability of surface passivation of silicon solar cells
CN106169510A (zh) * 2016-09-29 2016-11-30 无锡尚德太阳能电力有限公司 太阳能电池背钝化膜层结构和制备方法
CN109244149A (zh) * 2018-09-10 2019-01-18 通威太阳能（合肥）有限公司 一种基于perc单晶电池pecvd背面膜层结构以及制备方法
CN112234107A (zh) * 2020-10-12 2021-01-15 横店集团东磁股份有限公司 一种太阳能单晶perc电池及其制备方法
CN212625596U (zh) * 2020-07-30 2021-02-26 嘉兴阿特斯光伏技术有限公司 太阳能电池
US20240014329A1 (en) * 2020-12-29 2024-01-11 Chint New Energy Technology Co., Ltd. Back Structure of Solar Cell, and Solar Cell with Back Structure
CN117690996A (zh) * 2023-12-14 2024-03-12 常州亿晶光电科技有限公司 一种高效钝化的perc太阳能电池的制备方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130186464A1 (en) * 2012-01-03 2013-07-25 Shuran Sheng Buffer layer for improving the performance and stability of surface passivation of silicon solar cells
CN106169510A (zh) * 2016-09-29 2016-11-30 无锡尚德太阳能电力有限公司 太阳能电池背钝化膜层结构和制备方法
CN109244149A (zh) * 2018-09-10 2019-01-18 通威太阳能（合肥）有限公司 一种基于perc单晶电池pecvd背面膜层结构以及制备方法
CN212625596U (zh) * 2020-07-30 2021-02-26 嘉兴阿特斯光伏技术有限公司 太阳能电池
CN112234107A (zh) * 2020-10-12 2021-01-15 横店集团东磁股份有限公司 一种太阳能单晶perc电池及其制备方法
US20240014329A1 (en) * 2020-12-29 2024-01-11 Chint New Energy Technology Co., Ltd. Back Structure of Solar Cell, and Solar Cell with Back Structure
CN117690996A (zh) * 2023-12-14 2024-03-12 常州亿晶光电科技有限公司 一种高效钝化的perc太阳能电池的制备方法

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