WO2025248614A1 - Optical modulator - Google Patents
Optical modulatorInfo
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- WO2025248614A1 WO2025248614A1 PCT/JP2024/019521 JP2024019521W WO2025248614A1 WO 2025248614 A1 WO2025248614 A1 WO 2025248614A1 JP 2024019521 W JP2024019521 W JP 2024019521W WO 2025248614 A1 WO2025248614 A1 WO 2025248614A1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
Definitions
- This disclosure relates to an optical modulator.
- MZ optical modulators that utilize the electro-optic effect, such as thin-film LN optical modulators, are advantageous for broadening the bandwidth of optical modulators, and active technical research is underway. There have been many reports of optical modulators that utilize the electro-optic effect being realized as single-phase drive optical modulators.
- an RF board for converting two differential drive signals into three drive signals is provided between the differential drive driver and the LN modulator, which can increase the size of the MZ optical modulator (e.g., the length in the light propagation direction).
- One exemplary objective of the present disclosure is to provide an optical modulator that can achieve differential drive, which is more advantageous than single-phase drive, without increasing the size of the optical modulator that utilizes the electro-optic effect.
- an optical modulator comprises an input optical coupler; a first optical waveguide and a second optical waveguide made of a material having an electro-optic effect, which guide each of the two beams of light branched by the input optical coupler; an output optical coupler which combines the output light from the first optical waveguide and the second optical waveguide; a first electrode set provided on both sides along a first region of the first optical waveguide and to which a differential drive signal is applied; and a second electrode set provided on both sides along a second region of the second optical waveguide corresponding to a region shifted from the first region in the propagation direction of the light and to which the differential drive signal is applied, wherein the direction of the electric field generated in the first region by the first electrode set is opposite to the direction of the electric field generated in the second region by the second electrode set.
- FIG. 10 is a schematic top view illustrating a configuration example of an optical modulator according to a first embodiment.
- (A) is a cross-sectional view taken along line AA' in FIG. 1
- FIG. 10 is a schematic top view illustrating a configuration example of an optical modulator according to a second embodiment.
- 4A is a cross-sectional view taken along the line AA' in FIG. 4
- FIG. 4B is a cross-sectional view taken along the line BB' in FIG. 4
- FIG. 10 is a schematic top view illustrating a configuration example of an optical modulator according to a third embodiment.
- 6A is a cross-sectional view taken along line AA' in FIG. 6
- B is a cross-sectional view taken along line BB' in FIG. 6
- C is a cross-sectional view taken along line CC' in FIG.
- FIG. 10 is a schematic top view illustrating a configuration example of an optical modulator according to a fourth embodiment.
- FIG. 10 is a schematic top view illustrating a configuration example of an optical modulator according to a fifth embodiment.
- FIG. 1 is a schematic top view showing an example of the configuration of an optical modulator 10 according to the first embodiment.
- FIG. 2(A) is a cross-sectional view taken along the line A-A' in FIG. 1
- FIG. 2(B) is a cross-sectional view taken along the line B-B' in FIG. 1.
- the x-axis corresponds to the width direction of the optical modulator 10
- the y-axis corresponds to the height (or thickness) direction of the optical modulator 10.
- the z-axis corresponds to the length direction of the optical modulator 10, in other words, the propagation direction of the light and electrical signals. This correspondence between the three axes is similar in other embodiments.
- the optical modulator 10 is, for example, an MZ optical modulator, and includes an input optical coupler 112 that branches the input light into two, two parallel optical waveguides (arm waveguides) 114-1 and 114-2 that guide each of the two branches of light by the input optical coupler 112, and an output optical coupler 116 that combines the output light from the optical waveguides 114-1 and 114-2.
- arm waveguide 114 when the arm waveguides 114-1 and 114-2 are not to be distinguished from each other, they may be abbreviated as "arm waveguide 114.”
- Each of the input optical coupler 112, the two arm waveguides 114, and the output optical coupler 116 may be made of a material having an electro-optic effect, such as lithium niobate (LiNbO 3 ), as a non-limiting example.
- the optical modulator 10 comprises a substrate (e.g., a Si substrate) 101, a lower cladding layer 102 provided on the substrate 101, an LN layer 103 provided on the lower cladding layer 102, and an upper cladding layer 104 provided on the LN layer 103.
- a substrate e.g., a Si substrate
- LN layer 103 provided on the lower cladding layer 102
- upper cladding layer 104 provided on the LN layer 103.
- the LN layer 103 may be, for example, an X-cut LN crystal thin film in which the electro-optic effect is most pronounced in the direction parallel to the substrate surface.
- the LN layer 103 may also be replaced with, for example, a layer of polymer-based electro-optic material (EO polymer).
- the input optical coupler 112, two arm waveguides 114, and output optical coupler 116 are each formed on the LN layer 103, for example, by patterning a waveguide pattern.
- Figures 2(A) and 2(B) show arm waveguides 114-1 and 114-2 formed on the LN layer 103.
- the input optical coupler 112 , the two arm waveguides 114 , and the output optical coupler 116 are surrounded by a lower cladding layer 102 and an upper cladding layer 104 made of a material (eg, SiO 2 ) with a lower refractive index than the LN layer 103 , respectively.
- a lower cladding layer 102 and an upper cladding layer 104 made of a material (eg, SiO 2 ) with a lower refractive index than the LN layer 103 , respectively.
- the input optical coupler 112, the two arm waveguides 114, and the output optical coupler 116 are each embedded in the cladding material.
- light input to the optical modulator 10 is confined and propagated within the input optical coupler 112, the arm waveguides 114-1 and 114-2, and the output optical coupler 116, respectively.
- the lower cladding layer 102 and the upper cladding layer 104 may have the same or different compositions.
- signal electrodes 122a-1 and 122a-2 are provided on both sides of one arm waveguide 114-2 in the x-axis direction, extending in the z-axis direction along a portion of the arm waveguide 114-2.
- Signal electrodes 122a-1 and 122a-2 are an example of a first electrode set and are made of a conductive material such as aluminum (Al) or gold (Au).
- a “signal electrode” is an electrode to which a high-frequency signal such as an RF signal is applied, and may also be referred to as a “high-frequency electrode” or "traveling wave electrode.”
- the signal electrode 122a-1 is, for example, arranged on one of the two sides of the arm waveguide 114-2 in the x-axis direction, farther from the arm waveguide 114-1.
- the signal electrode 122a-2 is, for example, arranged on one of the two sides of the arm waveguide 114-2 in the x-axis direction, closer to the arm waveguide 114-1.
- arm waveguide 114-2 has a first region in which a portion is sandwiched on both sides in the x-axis direction by signal electrodes 122a-1 and 122a-2 when viewed from above.
- the first region corresponds to a partial modulation region where light propagating through arm waveguide 114-2 is modulated.
- a differential drive signal S which is a high frequency signal such as an RF signal, is applied to one signal electrode 122a-1, and a differential drive signal S ⁇ , which is complementary to the signal S, is applied to the other signal electrode 122a-2.
- signal electrodes 122b-1 and 122b-2 are provided on both sides of the other arm waveguide 114-1 in the x-axis direction, extending in the z-axis direction along a portion of the arm waveguide 114-1.
- the signal electrodes 122b-1 and 122b-2 are also made of a conductive material such as Al or Au.
- Signal electrode 122b-1 is arranged, for example, on one of the two sides of arm waveguide 114-1 in the x-axis direction, farther from arm waveguide 114-2.
- Signal electrode 122b-2 is arranged, for example, on one of the two sides of arm waveguide 114-1 in the x-axis direction, closer to arm waveguide 114-2.
- arm waveguide 114-1 has a second region in which a portion is sandwiched on both sides in the x-axis direction by signal electrodes 122b-1 and 122b-2 when viewed from above.
- the second region corresponds to a partial modulation region where light propagating through arm waveguide 114-1 is modulated.
- the second modulation region may be, for example, a region offset in the light propagation direction (z-axis direction) from the first modulation region in the arm waveguide 114-2.
- the first modulation region and the second modulation region may be regions that do not overlap with each other in the light propagation direction (z-axis direction), or may be regions that partially overlap. Note that, although the second modulation region is formed after the first modulation region in the light propagation direction in FIG. 1, the first modulation region may also be formed after the second modulation region.
- the signal electrode 122b-1 is electrically connected to the signal electrode 122a-1 to which one differential drive signal S is applied in the first modulation region, for example.
- the signal electrode 122b-2 is electrically connected to the signal electrode 122a-2 to which the other differential drive signal S is applied in the first modulation region, for example.
- the two electrodes when two electrodes are "electrically connected,” it is sufficient that the two electrodes are in a state of electrical conduction with each other.
- the two electrodes may be integrated into a single electrode, or individual electrode elements may be connected via one or more conductors (e.g., multilayer wiring and/or wire wiring) without impeding mutual conduction.
- an electric field is generated between signal electrodes 122b-1 and 122b-2 in the second modulation region of arm waveguide 114-1 in the opposite direction to the electric field (or electric field) generated between signal electrodes 122a-1 and 122a-2 in the first modulation region of arm waveguide 114-2.
- each arm waveguide 114 By reversing the direction of the electric field between the first modulation region and the second modulation region, for example, the sign of the refractive index change due to the electro-optic effect of each arm waveguide 114 is reversed between the first modulation region and the second modulation region, thereby realizing push-pull operation of the MZ optical modulator 10.
- differential drive signals S and S ⁇ are applied to each arm waveguide 114 so that the direction of the electric field is reversed for each different modulation region in the z-axis direction, and therefore a potential difference twice as large as that in single-phase drive is applied to each arm waveguide 114.
- Figure 3 shows a comparison example between the differential drive of this embodiment (c) and single-phase drive (a) and normal differential drive (b).
- the optical modulator is driven by a differential drive driver with a supply voltage of 2 Vppd (1 Vpps).
- the distance in the substrate surface width direction between the signal electrode “S” or “S - “ and the ground electrode “G” is “d".
- the signal electrode “S” represents the electrode to which the differential drive signal S is applied
- the signal electrode “S - " represents the electrode to which the differential drive signal S - is applied. Note that in Figure 3, the positional relationship between the signal electrode and the waveguide is made the same for comparison, so that the effect of the signal electrode on the increase in optical waveguide loss is made the same.
- one signal electrode “S” is provided between the two arm waveguides, and one ground electrode “G” is provided at a distance from each of the two arm waveguides.
- the electrode arrangement for normal differential drive (b) is such that, in a cross-sectional view, a pair of a ground electrode “G” and a signal electrode “S” or “ S- " is provided on both sides of each of the two arm waveguides, and another ground electrode “G” is provided between the signal electrodes "S” and " S- ".
- Fig. 4 is a schematic top view showing an example of the configuration of an optical modulator 40 according to embodiment 2.
- Fig. 5(A) is a cross-sectional view taken along line A-A' in Fig. 4
- Fig. 5(B) is a cross-sectional view taken along line B-B' in Fig. 4
- Fig. 5(C) is a cross-sectional view taken along line CC' in Fig. 4.
- the optical modulator 40 illustrated in FIG. 4 is an MZ optical modulator, and like the MZ optical modulator 10 illustrated in FIG. 1, it includes an input optical coupler 112, arm waveguides 114-1 and 114-2, and an output optical coupler 116.
- the MZ optical modulator 40 illustratively includes a signal electrode 41 to which one of the differential drive signals S and S ⁇ (for example, S) is applied, and a signal electrode 43 to which the other of the differential drive signals S and S ⁇ (for example, S ⁇ ) is applied.
- One signal electrode 41 is electrically connected to, for example, T-shaped sub-electrodes 411 and 413 and L-shaped sub-electrodes 412 and 414 when viewed from above.
- the other signal electrode 43 is electrically connected to, for example, T-shaped sub-electrodes 431 and 433 and L-shaped sub-electrodes 432 and 434 when viewed from above.
- one arm waveguide 114-1 has a first modulation region sandwiched between T-shaped sub-electrodes 411 and 431 on both sides in the x-axis direction.
- Sub-electrode 411 is an example of a first sub-electrode, and is arranged, for example, on the side of arm waveguide 114-1 on both sides in the x-axis direction closer to arm waveguide 114-2.
- Sub-electrode 431 is an example of a second sub-electrode, and is arranged, for example, on one of the x-axis sides of arm waveguide 114-1, farther from arm waveguide 114-2.
- Sub-electrodes 411 and 431 are an example of a first electrode set to which a differential drive signal is applied.
- the other arm waveguide 114-2 has, for example, a second modulation region sandwiched on both sides in the x-axis direction by L-shaped sub-electrodes 412 and 432.
- the second modulation region may, for example, be a region shifted in the light propagation direction (z-axis direction) from the first modulation region in arm waveguide 114-1.
- the first modulation region and second modulation region may be regions that do not overlap with each other in the light propagation direction (z-axis direction), or may be regions that partially overlap with each other.
- Sub-electrode 412 is an example of a third sub-electrode, and is arranged, for example, on one of the two sides of arm waveguide 114-2 in the x-axis direction, closer to arm waveguide 114-1.
- Sub-electrode 432 is an example of a fourth sub-electrode, and is arranged, for example, on one of the two sides of arm waveguide 114-2 in the x-axis direction, farther from arm waveguide 114-1.
- Sub-electrodes 412 and 432 are an example of a second electrode set to which a differential drive signal is applied.
- one arm waveguide 114-1 has a third modulation region sandwiched on both sides in the x-axis direction by T-shaped sub-electrodes 413 and 433.
- the third modulation region may, for example, be a region offset in the light propagation direction (z-axis direction) from the second modulation region in arm waveguide 114-2.
- the other arm waveguide 114-2 has a fourth modulation region sandwiched on both sides in the x-axis direction by L-shaped sub-electrodes 414 and 434.
- the fourth modulation region may, for example, be a region offset in the light propagation direction (z-axis direction) from the third modulation region in arm waveguide 114-1.
- the second modulation region and the third modulation region may be regions that do not overlap with each other in the light propagation direction (z-axis direction), or they may be regions that partially overlap with each other.
- the third modulation region and the fourth modulation region may be regions that do not overlap with each other in the light propagation direction (z-axis direction), or they may be regions that partially overlap with each other.
- the electrode arrangement of the third modulation region may be equivalent to the electrode arrangement of the first modulation region
- the electrode arrangement of the fourth modulation region may be equivalent to the electrode arrangement of the second modulation region.
- the MZ optical modulator 40 may have a configuration in which the electrode arrangement of the first modulation region and the electrode arrangement of the second modulation region are alternately repeated along the light propagation direction between the arm waveguides 114.
- the first to fourth modulation regions are arranged alternately along the light propagation direction (z-axis direction) between the arm waveguides 114-1 and 114-2 in the top view of FIG. 4.
- the MZ optical modulator 40 illustrated in FIG. 4 has a configuration in which partial modulation regions partially (or intermittently) sandwiched between electrodes in each of the two arm waveguides 114 alternate along the light propagation direction (z-axis direction) between the two arm waveguides 114.
- the spacing (pitch) between the modulation regions in the light propagation direction in other words, the pitch between the sub-electrodes in the z-axis direction, can be designed, for example, so that the lengths of the first to fourth modulation regions are sufficiently small relative to the maximum wavelength of the modulated electrical signal (for example, 1/20 or less).
- the length of the sub-electrode that applies the modulated electrical signal to the arm waveguide in the light propagation direction to be a length that is not affected by frequency dependency.
- the length of the portion of each sub-electrode that forms each modulation region along the arm waveguide 114 can be approximately 10 micrometers ( ⁇ m) to 100 ⁇ m.
- Figure 4 illustrates an example in which two sets of partial modulation regions that alternate between both arm waveguides 114 are repeatedly provided along the light propagation direction (a total of four modulation regions), but three or more sets may also be repeatedly provided along the light propagation direction.
- the length of the portion of each sub-electrode along the arm waveguide 114 is approximately 10 ⁇ m to 100 ⁇ m, as described above, and the length of the MZ optical modulator 40 in the z-axis direction is approximately several millimeters (mm).
- a large number of modulation regions on the order of, for example, a dozen to several tens, can be arranged alternately between the arm waveguides 114 along the light propagation direction (z-axis direction).
- Figure 4 shows an example in which partial modulation regions are alternately arranged in the order of arm waveguide 114-1 and arm waveguide 114-2 in the light propagation direction
- the partial modulation regions may alternatively be arranged in the order of arm waveguide 114-2 and arm waveguide 114-1.
- each of the sub-electrodes (reference numerals omitted) arranged partially (or intermittently) along the light propagation direction on both sides of each of the arm waveguides 114-1 and 114-2 is not limited to a T-shape or an L-shape.
- each of the sub-electrodes it is sufficient for each of the sub-electrodes to be electrically connected to the signal electrode 41 or 43 and have an electrode portion that extends partially along both sides of the respective arm waveguide 114.
- each sub-electrode and signal electrode 41 or 43 may be electrically connected by multilayer wiring.
- each of the signal electrodes 41 and 43 is positioned on the upper surface of the upper cladding layer 104 at a distance in the x-axis direction from each of the arm waveguides 114-1 and 114-2.
- the electrode portions extending in the z-axis direction of the T-shaped sub-electrodes 411 and 431 that form the first modulation region are arranged on both sides of the arm waveguide 114-1 in the width direction on the LN layer 103.
- Each of these electrode portions is connected to signal electrodes 41 and 43 arranged on the upper surface of the upper clad layer 104 through an electrode portion (or wiring) formed in a crank shape so as to pass above the arm waveguide 114 in the cross-sectional view of Figure 5(A).
- the "crank shape” is merely an example, and electrode portions (or wiring) of shapes other than the “crank shape” may be used for inter-electrode connections. This also applies to the following explanations.
- the electrode portion of the sub-electrode 412 that extends in the z-axis direction is positioned on the LN layer 103 on either side of the arm waveguide 114-2 in the width direction, closer to the arm waveguide 114-1.
- the electrode portion of the sub-electrode 432 that extends in the z-axis direction is disposed on the LN layer 103 on either side of the arm waveguide 114-2 in the width direction, farther from the arm waveguide 114-1.
- the electrode portions of the sub-electrodes 412 and 432 arranged on the LN layer 103 are connected to the signal electrodes 41 and 43, respectively, through crank-shaped electrode portions (or wiring) that pass above the arm waveguide 114 in cross-sectional view.
- the wiring between the signal electrodes 41 and 43 and the individual sub-electrodes may all be at the same height in the y-axis above the arm waveguide 114 in a cross-sectional view, or some or all of them may be at different heights.
- the wiring that extends beyond the arm waveguide 114 in the y-axis direction may be designed to maintain a distance from the arm waveguide 114 in the y-axis direction that prevents optical loss due to light absorption by the sub-electrodes, for example, a spacing of approximately 2 ⁇ m.
- connection (or wiring) form between the T-shaped sub-electrodes 413 and 431 and the signal electrodes 41 and 43 that form the third modulation region may be understood to be equivalent to the connection form of the first modulation region illustrated in Figure 5(A).
- connection (or wiring) form between the L-shaped sub-electrodes 414 and 434 that form the fourth modulation area and the signal electrodes 41 and 43 can be understood to be equivalent to the connection form of the second modulation area illustrated in Figures 5(B) and 5(C).
- connection configurations illustrated in Figures 5(A) to 5(C) are examples of connection configurations using multi-layer wiring, but the electrical connection (wiring) between each sub-electrode and signal electrode 41 or 43 in the cross-sectional view illustrated in Figure 4 may also be a connection configuration using single-layer wiring.
- the signal electrodes 41 and 43 may be provided on the LN layer 103 on which the sub-electrodes are provided, and in this case, wiring may be provided within the upper cladding layer 104 (in other words, without passing through other layers) to electrically connect each sub-electrode to the signal electrode 41 or 43.
- the wiring portion that extends beyond the arm waveguide 114 in the y-axis direction can be designed to maintain a distance from the arm waveguide 114 in the y-axis direction that prevents optical loss due to light absorption by the sub-electrode, for example, a spacing of approximately 2 ⁇ m.
- Fig. 6 is a schematic top view showing a configuration example of an optical modulator 60 according to embodiment 3.
- Fig. 7(A) is a cross-sectional view taken along line A-A' in Fig. 6
- Fig. 7(B) is a cross-sectional view taken along line B-B' in Fig. 6
- Fig. 7(C) is a cross-sectional view taken along line C-C' in Fig. 6.
- the optical modulator 60 illustrated in FIG. 6 is an MZ optical modulator, and corresponds to a configuration in which, in the configuration of the MZ optical modulator 40 illustrated in FIG. 4 of embodiment 2, each of the L-shaped sub-electrodes for the arm waveguide 114-2 is replaced with a T-shaped sub-electrode, and the pitch between the sub-electrodes in the light propagation direction is narrower than in the example of FIG. 4.
- signal electrode 41 is electrically connected to T-shaped sub-electrodes 411 and 413 and T-shaped sub-electrodes 612 and 614.
- signal electrode 43 is electrically connected to T-shaped sub-electrodes 431 and 433 and T-shaped sub-electrodes 632 and 634.
- one arm waveguide 114-1 has a first modulation region sandwiched on both sides in the x-axis direction by, for example, T-shaped sub-electrodes 411 and 431.
- the other arm waveguide 114-2 has a second modulation region sandwiched on both sides in the x-axis direction by, for example, T-shaped sub-electrodes 612 and 632.
- one arm waveguide 114-1 has a third modulation region sandwiched on both sides in the x-axis direction by T-shaped sub-electrodes 413 and 433.
- the other arm waveguide 114-2 has a fourth modulation region sandwiched on both sides in the x-axis direction by T-shaped sub-electrodes 614 and 634.
- each of the first to fourth modulation regions has a T-shaped sub-electrode arrangement.
- the first to fourth modulation regions may be regions that are offset from one another in the light propagation direction (z-axis direction).
- the first to fourth modulation regions may be regions that do not overlap one another in the light propagation direction, or may be regions that partially overlap one another.
- two T-shaped sub-electrodes 612 and 632 are arranged with their x-axis directions oriented in a staggered manner.
- two T-shaped sub-electrodes 614 and 634 are arranged with their x-axis directions oriented in a staggered manner.
- This staggered arrangement reduces the pitch between the sub-electrodes in the light propagation direction compared to embodiment 2, which uses an L-shaped sub-electrode arrangement.
- the sub-electrode arrangement density in the light propagation direction can be increased.
- the length of each of the sub-electrode portions that sandwich each arm waveguide 114 on both sides in the x-axis direction in other words, the length of each modulation region where light propagating through each arm waveguide 114 is modulated, can be easily increased in the light propagation direction.
- the sub-electrode arrangement of embodiment 3 can contribute to further reducing the size of the MZ optical modulator 60 (e.g., shortening the length in the light propagation direction) and further improving modulation efficiency by lengthening the modulation region, compared to the sub-electrode arrangement of embodiment 2 ( Figure 4).
- Figures 7(A) to 7(C) show an example in which each T-shaped sub-electrode shown in Figure 6 is electrically connected to signal electrode 41 or 43 using multi-layer wiring. By using multi-layer wiring, it is easy to narrow the pitch between the sub-electrodes as described above. Note that Figure 7(A) is equivalent to the sub-electrode wiring example for the first modulation region shown in Figure 5(A).
- the electrode portions extending in the z-axis direction of the T-shaped sub-electrodes 612 and 632 that form the second modulation region are arranged on both sides of the arm waveguide 114-2 in the width direction on the LN layer 103.
- the electrode portion of the sub-electrode 612 arranged on the LN layer 103 is connected to the signal electrode 41 through an electrode portion (or wiring) formed in a crank shape so as to pass above the arm waveguide 114-2 in a cross-sectional view.
- the electrode portion of the sub-electrode 632 arranged on the LN layer 103 is connected to the signal electrode 43 through an electrode portion (or wiring) formed in a crank shape so as to pass above each of the two arm waveguides 114 in a cross-sectional view.
- connection (or wiring) between the T-shaped sub-electrodes 413 and 431 that form the third modulation region and the signal electrodes 41 and 43 may also be understood to be equivalent to the connection configuration of the first modulation region illustrated in Figure 7(A).
- connection (or wiring) form between the T-shaped sub-electrodes 614 and 634 that form the fourth modulation region and the signal electrodes 41 and 43 may be understood to be equivalent to the connection form of the second modulation region illustrated in Figures 7(B) and 7(C).
- Fig. 8 is a schematic top view showing an example of the configuration of an optical modulator 80 according to embodiment 4.
- the optical modulator 80 shown in Fig. 8 is an MZ optical modulator, and similar to the above-described embodiments 1 to 3, includes an input optical coupler 112, arm waveguides 114-1 and 114-2, and an output optical coupler 116.
- the MZ optical modulator 80 also includes, for example, a signal electrode 41 to which a differential drive signal S is applied, and a signal electrode 43 to which a differential drive signal S - is applied.
- linear sub-electrodes 811 to 814 are electrically connected to one signal electrode 41 by wire wiring 850.
- linear sub-electrodes 831 to 834 are electrically connected to the other signal electrode 43 by wire wiring 870.
- one arm waveguide 114-1 has a first modulation region sandwiched on both sides in the x-axis direction by sub-electrodes 811 and 831.
- the other arm waveguide 114-2 has a second modulation region sandwiched on both sides in the x-axis direction by sub-electrodes 812 and 832.
- one arm waveguide 114-1 has a third modulation region sandwiched on both sides in the x-axis direction by sub-electrodes 813 and 833.
- the other arm waveguide 114-2 has a fourth modulation region sandwiched on both sides in the x-axis direction by sub-electrodes 814 and 834.
- the first to fourth modulation regions may be regions that are offset from one another in the light propagation direction (z-axis direction).
- the first to fourth modulation regions may be regions that do not overlap one another in the light propagation direction, or may be regions that partially overlap one another.
- a ground electrode (G) extending in the z-axis direction along the signal electrodes 41 and 43 may be provided on the upper clad layer 104 away from each of the signal electrodes 41 and 43 in the x-axis direction.
- ground electrodes 45 and 47 may be provided symmetrically in the x-axis direction on the upper cladding layer 104 at positions spaced apart in the x-axis direction from the signal electrodes 41 and 43, respectively.
- the ground electrodes 45 and 47 By providing the ground electrodes 45 and 47, the electric field generated between the sub-electrodes in the individual modulation regions formed alternately in the light propagation direction between the two arm waveguides 114 can be stabilized. Therefore, for example, when multiple MZ optical modulator blocks consisting of an input optical coupler 112, two arm waveguides 114, and an output optical coupler 116 are arranged in parallel in the x-axis direction to accommodate multiple channels or as an IQ modulator, crosstalk that can occur between the MZ optical modulator blocks can be suppressed, and optical modulation efficiency can be improved compared to when the ground electrodes 45 and 47 are not provided.
- the speed of the differential drive signal which is a high-frequency electrical signal, may also decrease, which may result in a loss of speed matching between the differential drive signal and the light being modulated in the modulation region of the high-frequency arm waveguide 114.
- the placement density of the sub-electrodes in the light propagation direction can be determined based on the electrical and optical velocity matching conditions.
- the placement density of the sub-electrodes can be determined based on the impedance required for the high-frequency line and the electrical velocity of the differential drive signal, within the range that satisfies the velocity matching conditions.
- connection used in this disclosure may be read as “coupled.”
- Connected or “coupled” may be understood to mean any direct or indirect “connection” or “coupling” between two or more elements.
- the term may be understood to include an indirect “connection” or “coupling” where one or more intermediate elements are interposed between two elements that are “connected” or “coupled” to each other.
- any reference to an element followed by a designation such as “first", “second", etc. does not limit the quantity or order of those elements. These designations are merely used as a convenient method to distinguish between two or more elements. For example, reference to a first and a second element does not imply that only two elements may be employed, nor does it imply that the first element must precede the second element in any physical quantity.
- This disclosure is useful, for example, in optical communication technology.
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Abstract
Description
本開示は、光変調器に関する。 This disclosure relates to an optical modulator.
薄膜LN光変調器のような、電気光学効果を利用したマッハツェンダ(MZ)光変調器は、光変調器の広帯域化に有利であり、活発に技術検討が進んでいる。電気光学効果を利用した光変調器は、単相駆動の光変調器として実現される報告が多い。 Mach-Zehnder (MZ) optical modulators that utilize the electro-optic effect, such as thin-film LN optical modulators, are advantageous for broadening the bandwidth of optical modulators, and active technical research is underway. There have been many reports of optical modulators that utilize the electro-optic effect being realized as single-phase drive optical modulators.
一方、光変調器を駆動するためのドライバについては、差動駆動設計のほうが広帯域化かつ低電力化に有利である。差動駆動ドライバを用いて、電気光学効果を利用したMZ光変調器を駆動する方法は、例えば、特許文献1にて報告されている。 On the other hand, when it comes to drivers for driving optical modulators, a differential drive design is advantageous in terms of broadband and low power consumption. A method of using a differential drive driver to drive an MZ optical modulator that utilizes the electro-optic effect is reported, for example, in Patent Document 1.
特許文献1に記載の技術では、2ポートの差動駆動ドライバから出力される互いに相補関係にある2系統の差動駆動信号S、Sバー(以下、S-と表記する)が、中間相互接続構造(IIS)において、3系統の駆動信号S-、S、S-に変換される。そして、3つの並行するアーム導波路に対して、それぞれ、駆動信号S-、S、S-が与えられる。なお、IISは、特許文献1において、「RF(radio frequency)基板」または「RFキャリア」とも表記されている。 In the technology described in Patent Document 1, two systems of differential drive signals S and S bar (hereinafter referred to as S - ) that are complementary to each other and output from a two-port differential driver are converted into three systems of drive signals S - , S, and S - in an intermediate interconnect structure (IIS). Then, the drive signals S - , S, and S - are provided to three parallel arm waveguides, respectively. Note that in Patent Document 1, the IIS is also referred to as an "RF (radio frequency) substrate" or "RF carrier."
しかしながら、特許文献1に記載されるような差動駆動構成では、2系統の差動駆動信号を3系統の駆動信号に変換するためのRF基板が、差動駆動ドライバとLN変調器との間に設けられるため、MZ光変調器のサイズ(例えば、光伝搬方向の長さ)が増大し得る。 However, in the differential drive configuration described in Patent Document 1, an RF board for converting two differential drive signals into three drive signals is provided between the differential drive driver and the LN modulator, which can increase the size of the MZ optical modulator (e.g., the length in the light propagation direction).
本開示の例示的な目的の1つは、電気光学効果を利用した光変調器のサイズを増大させずに、単相駆動よりも有利な差動駆動を実現し得る光変調器を提供することにある。 One exemplary objective of the present disclosure is to provide an optical modulator that can achieve differential drive, which is more advantageous than single-phase drive, without increasing the size of the optical modulator that utilizes the electro-optic effect.
そのため、本開示の一態様に係る光変調器は、入力光カプラと、電気光学効果を有する材料によって構成され、前記入力光カプラにより2分岐された光のそれぞれを導波する第1の光導波路および第2の光導波路と、前記第1の光導波路および前記第2の光導波路それぞれの出力光を結合する出力光カプラと、前記第1の光導波路の第1の領域に沿って両側に設けられて差動駆動信号が印可される第1の電極セットと、前記光の伝搬方向において前記第1の領域からずれた領域に対応する前記第2の光導波路の第2の領域に沿って両側に設けられて前記差動駆動信号が印可される第2の電極セットと、を備え、前記第1の電極セットによって前記第1の領域に生じる電界の向きと、前記第2の電極セットによって前記第2の領域に生じる電界の向きとが逆方向である。 Therefore, an optical modulator according to one aspect of the present disclosure comprises an input optical coupler; a first optical waveguide and a second optical waveguide made of a material having an electro-optic effect, which guide each of the two beams of light branched by the input optical coupler; an output optical coupler which combines the output light from the first optical waveguide and the second optical waveguide; a first electrode set provided on both sides along a first region of the first optical waveguide and to which a differential drive signal is applied; and a second electrode set provided on both sides along a second region of the second optical waveguide corresponding to a region shifted from the first region in the propagation direction of the light and to which the differential drive signal is applied, wherein the direction of the electric field generated in the first region by the first electrode set is opposite to the direction of the electric field generated in the second region by the second electrode set.
以下、図面を参照しながら実施形態について詳細に説明する。ただし、添付図面および以下の説明は、当業者が本開示を十分に理解するために、提供されるのであって、これらにより特許請求の範囲に記載の主題を限定することは意図されていない。また、必要以上に詳細な説明は省略する場合がある。例えば、既によく知られた事項の詳細説明または実質的に同一の構成に対する重複的な説明を省略する場合がある。 Embodiments will now be described in detail with reference to the drawings. However, the accompanying drawings and the following description are provided to enable those skilled in the art to fully understand the present disclosure, and are not intended to limit the subject matter described in the claims. Furthermore, more detailed descriptions than necessary may be omitted. For example, detailed descriptions of matters that are already well-known or redundant descriptions of substantially identical configurations may be omitted.
また、図面の記載において、同一または対応する要素には適宜同一の符号が付されている。図面は模式的なものであり、各要素の寸法の関係または各要素の比率などは、現実と異なる場合がある。図面の相互間においても、互いの寸法の関係または比率が異なる部分が含まれている場合がある。以下の説明において数値を記載した場合、その数値はあくまでも例示であり、他の数値が追加的または代替的に用いられてもよい。 Furthermore, in the drawings, identical or corresponding elements are appropriately designated by the same reference numerals. The drawings are schematic, and the dimensional relationships or ratios of each element may differ from reality. Even between drawings, there may be parts where the dimensional relationships or ratios differ. When numerical values are given in the following description, they are merely examples, and other numerical values may be used in addition or instead.
<実施形態1>
図1は、実施形態1に係る光変調器10の構成例を示す模式的な上面図である。図2(A)は、図1のA-A′矢視断面図であり、図2(B)は、図1のB-B′矢視断面図である。なお、図1、図2(A)および図2(B)において、x軸は、光変調器10の幅方向に対応し、y軸は、光変調器10の高さ(または厚み)方向に対応する。z軸は、光変調器10の長さ方向、換言すると、光および電気信号の伝搬方向に対応する。このような3軸の対応関係は、他の実施形態においても同様である。
<Embodiment 1>
FIG. 1 is a schematic top view showing an example of the configuration of an optical modulator 10 according to the first embodiment. FIG. 2(A) is a cross-sectional view taken along the line A-A' in FIG. 1, and FIG. 2(B) is a cross-sectional view taken along the line B-B' in FIG. 1. In FIGS. 1, 2(A), and 2(B), the x-axis corresponds to the width direction of the optical modulator 10, and the y-axis corresponds to the height (or thickness) direction of the optical modulator 10. The z-axis corresponds to the length direction of the optical modulator 10, in other words, the propagation direction of the light and electrical signals. This correspondence between the three axes is similar in other embodiments.
図1に例示したように、光変調器10は、例えば、MZ光変調器であり、入力光を2分岐する入力光カプラ112と、入力光カプラ112によって2分岐された光のそれぞれを導波する2本の並行する光導波路(アーム導波路)114-1および114-2と、各光導波路114-1および114-2の出力光を結合する出力光カプラ116と、を備える。以降の説明において、アーム導波路114-1および114-2を互いに区別しない場合は、「アーム導波路114」と略記することがある。 As illustrated in FIG. 1, the optical modulator 10 is, for example, an MZ optical modulator, and includes an input optical coupler 112 that branches the input light into two, two parallel optical waveguides (arm waveguides) 114-1 and 114-2 that guide each of the two branches of light by the input optical coupler 112, and an output optical coupler 116 that combines the output light from the optical waveguides 114-1 and 114-2. In the following description, when the arm waveguides 114-1 and 114-2 are not to be distinguished from each other, they may be abbreviated as "arm waveguide 114."
入力光カプラ112、2本のアーム導波路114、および、出力光カプラ116のそれぞれは、非限定的な一例として、ニオブ酸リチウム(LiNbO3)のような電気光学効果を有する材料によって構成され得る。 Each of the input optical coupler 112, the two arm waveguides 114, and the output optical coupler 116 may be made of a material having an electro-optic effect, such as lithium niobate (LiNbO 3 ), as a non-limiting example.
例えば図2(A)および図2(B)の断面図に例示したように、光変調器10は、基板(例えば、Si基板)101と、基板101上に設けられた下部クラッド層102と、下部クラッド層102に設けられたLN層103と、LN層103上に設けられた上部クラッド層104と、を備える。 For example, as illustrated in the cross-sectional views of Figures 2(A) and 2(B), the optical modulator 10 comprises a substrate (e.g., a Si substrate) 101, a lower cladding layer 102 provided on the substrate 101, an LN layer 103 provided on the lower cladding layer 102, and an upper cladding layer 104 provided on the LN layer 103.
LN層103は、例示的に、電気光学効果が基板表面に対して平行な方向が顕著であるXカットのLN結晶薄膜であり得る。なお、LN層103は、例えば、ポリマー系電気光学材料(EOポリマー)の層に置換されてもよい。 The LN layer 103 may be, for example, an X-cut LN crystal thin film in which the electro-optic effect is most pronounced in the direction parallel to the substrate surface. The LN layer 103 may also be replaced with, for example, a layer of polymer-based electro-optic material (EO polymer).
LN層103上に、入力光カプラ112、2本のアーム導波路114、および、出力光カプラ116のそれぞれが例えば導波路パターンのパターニングによって形成される。例示的に、図2(A)および図2(B)には、アーム導波路114-1および114-2がLN層103上に形成されていることが例示されている。 The input optical coupler 112, two arm waveguides 114, and output optical coupler 116 are each formed on the LN layer 103, for example, by patterning a waveguide pattern. For example, Figures 2(A) and 2(B) show arm waveguides 114-1 and 114-2 formed on the LN layer 103.
入力光カプラ112、2本のアーム導波路114、および、出力光カプラ116のそれぞれは、LN層103よりも屈折率の低い材料(例えば、SiO2)の下部クラッド層102および上部クラッド層104によって取り囲まれている。 The input optical coupler 112 , the two arm waveguides 114 , and the output optical coupler 116 are surrounded by a lower cladding layer 102 and an upper cladding layer 104 made of a material (eg, SiO 2 ) with a lower refractive index than the LN layer 103 , respectively.
別言すると、入力光カプラ112、2本のアーム導波路114、および、出力光カプラ116のそれぞれは、クラッド材料内に埋設されている。このような構造により、光変調器10に入力された光は、入力光カプラ112、アーム導波路114-1、114-2、および、出力光カプラ116のそれぞれに閉じ込められて伝搬する。なお、下部クラッド層102と上部クラッド層104とは互いに組成が異なっていてもよいし同じであってもよい。 In other words, the input optical coupler 112, the two arm waveguides 114, and the output optical coupler 116 are each embedded in the cladding material. With this structure, light input to the optical modulator 10 is confined and propagated within the input optical coupler 112, the arm waveguides 114-1 and 114-2, and the output optical coupler 116, respectively. The lower cladding layer 102 and the upper cladding layer 104 may have the same or different compositions.
一方のアーム導波路114-2のx軸方向両側には、図1および図2(A)に示すように、例えば、アーム導波路114-2の一部に沿ってz軸方向に延在する信号電極122a-1および122a-2が設けられる。 As shown in Figures 1 and 2(A), signal electrodes 122a-1 and 122a-2 are provided on both sides of one arm waveguide 114-2 in the x-axis direction, extending in the z-axis direction along a portion of the arm waveguide 114-2.
信号電極122a-1および122a-2は、第1の電極セットの一例であり、例えば、アルミニウム(Al)または金(Au)といった導電材料によって構成される。なお、「信号電極」は、RF信号のような高周波信号が与えられる電極であって、「高周波電極」または「進行波電極」とも称され得る。 Signal electrodes 122a-1 and 122a-2 are an example of a first electrode set and are made of a conductive material such as aluminum (Al) or gold (Au). Note that a "signal electrode" is an electrode to which a high-frequency signal such as an RF signal is applied, and may also be referred to as a "high-frequency electrode" or "traveling wave electrode."
信号電極122a-1は、例えば、アーム導波路114-2のx軸方向両側のうちアーム導波路114-1に対して遠い側に配置される。信号電極122a-2は、例えば、アーム導波路114-2のx軸方向両側のうちアーム導波路114-1に対して近い側に配置される。 The signal electrode 122a-1 is, for example, arranged on one of the two sides of the arm waveguide 114-2 in the x-axis direction, farther from the arm waveguide 114-1. The signal electrode 122a-2 is, for example, arranged on one of the two sides of the arm waveguide 114-2 in the x-axis direction, closer to the arm waveguide 114-1.
別言すると、アーム導波路114-2は、その一部が上面視において信号電極122a-1および122a-2によってx軸方向両側が挟まれた第1の領域を有する。第1の領域は、アーム導波路114-2を伝搬する光が変調を受ける部分的な変調領域に相当する。 In other words, arm waveguide 114-2 has a first region in which a portion is sandwiched on both sides in the x-axis direction by signal electrodes 122a-1 and 122a-2 when viewed from above. The first region corresponds to a partial modulation region where light propagating through arm waveguide 114-2 is modulated.
一方の信号電極122a-1には、例えば、RF信号のような高周波信号である差動駆動信号Sが印可され、他方の信号電極122a-2には、例えば、信号Sと相補関係にある差動駆動信号S-が印可される。 A differential drive signal S, which is a high frequency signal such as an RF signal, is applied to one signal electrode 122a-1, and a differential drive signal S − , which is complementary to the signal S, is applied to the other signal electrode 122a-2.
また、他方のアーム導波路114-1のx軸方向両側には、図1および図2(B)に示すように、例えば、アーム導波路114-1の一部に沿ってz軸方向に延在する信号電極122b-1および122b-2が設けられる。信号電極122b-1および122b-2も、例えば、AlまたはAuといった導電材料によって構成される。 Furthermore, as shown in Figures 1 and 2(B), signal electrodes 122b-1 and 122b-2 are provided on both sides of the other arm waveguide 114-1 in the x-axis direction, extending in the z-axis direction along a portion of the arm waveguide 114-1. The signal electrodes 122b-1 and 122b-2 are also made of a conductive material such as Al or Au.
信号電極122b-1は、例えば、アーム導波路114-1のx軸方向両側のうちアーム導波路114-2に対して遠い側に配置される。信号電極122b-2は、例えば、アーム導波路114-1のx軸方向両側のうちアーム導波路114-2に対して近い側に配置される。 Signal electrode 122b-1 is arranged, for example, on one of the two sides of arm waveguide 114-1 in the x-axis direction, farther from arm waveguide 114-2. Signal electrode 122b-2 is arranged, for example, on one of the two sides of arm waveguide 114-1 in the x-axis direction, closer to arm waveguide 114-2.
別言すると、アーム導波路114-1は、その一部が上面視において信号電極122b-1および122b-2によってx軸方向両側が挟まれた第2の領域を有する。第2の領域は、アーム導波路114-1を伝搬する光が変調を受ける部分的な変調領域に相当する。 In other words, arm waveguide 114-1 has a second region in which a portion is sandwiched on both sides in the x-axis direction by signal electrodes 122b-1 and 122b-2 when viewed from above. The second region corresponds to a partial modulation region where light propagating through arm waveguide 114-1 is modulated.
第2の変調領域は、例示的に、アーム導波路114-2における第1の変調領域とは光伝搬方向(z軸方向)においてずれた領域であり得る。第1の変調領域と第2の変調領域とは、光伝搬方向(z軸方向)において互いに重複しない領域であってもよいし、部分的に重複する領域であってもよい。なお、図1には、光伝搬方向に対して第1の変調領域の後段に第2の変調領域が形成されているが、第2の変調領域の後段に第1の変調領域が形成されてもよい。 The second modulation region may be, for example, a region offset in the light propagation direction (z-axis direction) from the first modulation region in the arm waveguide 114-2. The first modulation region and the second modulation region may be regions that do not overlap with each other in the light propagation direction (z-axis direction), or may be regions that partially overlap. Note that, although the second modulation region is formed after the first modulation region in the light propagation direction in FIG. 1, the first modulation region may also be formed after the second modulation region.
そして、信号電極122b-1は、例えば、第1の変調領域において一方の差動駆動信号Sが印可される信号電極122a-1と電気的に接続される。これに対し、信号電極122b-2は、例えば、第1の変調領域において他方の差動駆動信号S-が印可される信号電極122a-2と電気的に接続される。 The signal electrode 122b-1 is electrically connected to the signal electrode 122a-1 to which one differential drive signal S is applied in the first modulation region, for example. On the other hand, the signal electrode 122b-2 is electrically connected to the signal electrode 122a-2 to which the other differential drive signal S is applied in the first modulation region, for example.
なお、2つの電極が「電気的に接続される」とは、2つの電極が、互いに電気的に導通する状態であれば足りることを意味する。例えば、2つの電極が、1つの電極に一体化された構成でもよいし、個別の電極素子が1つまたは複数の導体(例えば、多層配線および/またはワイヤ配線など)を介して互いの導通を阻害せずに接続された構成でもよい。 Note that when two electrodes are "electrically connected," it is sufficient that the two electrodes are in a state of electrical conduction with each other. For example, the two electrodes may be integrated into a single electrode, or individual electrode elements may be connected via one or more conductors (e.g., multilayer wiring and/or wire wiring) without impeding mutual conduction.
また、図1において、アーム導波路114-1および114-2の間において電気的な接続経路が互いに交差する(または入れ替わる)部分が存在するが、例えば、交差部分が互いに電気的に絶縁されていれば問題ない。例えば、多層配線によって交差部分の配線を空間的に分離することで、電気的な絶縁が実現され得る。 In addition, in Figure 1, there are portions where the electrical connection paths intersect (or switch) between arm waveguides 114-1 and 114-2, but this does not pose a problem if the intersecting portions are electrically insulated from each other. For example, electrical isolation can be achieved by spatially separating the wiring at the intersecting portions using multilayer wiring.
以上のような電極配置によって、アーム導波路114-1の第2の変調領域における信号電極122b-1および122b-2の間には、アーム導波路114-2の第1の変調領域における信号電極122a-1および122a-2の間に生じる電界(または電場)の向きとは逆方向の電場が生じる。 With this electrode arrangement, an electric field is generated between signal electrodes 122b-1 and 122b-2 in the second modulation region of arm waveguide 114-1 in the opposite direction to the electric field (or electric field) generated between signal electrodes 122a-1 and 122a-2 in the first modulation region of arm waveguide 114-2.
第1の変調領域と第2の変調領域とで電界の向きが反転することにより、例えば、各アーム導波路114の電気光学効果による屈折率変化の符号が、第1の変調領域と第2の変調領域とで反転するため、MZ光変調器10のプッシュプル動作が実現される。 By reversing the direction of the electric field between the first modulation region and the second modulation region, for example, the sign of the refractive index change due to the electro-optic effect of each arm waveguide 114 is reversed between the first modulation region and the second modulation region, thereby realizing push-pull operation of the MZ optical modulator 10.
また、アーム導波路114のそれぞれに対して、z軸方向の異なる変調領域ごとに電場の向きが反転するように差動駆動信号SおよびS-が印可されるので、単相駆動に比べて2倍の電位差が個々のアーム導波路114に印可される。 Furthermore, differential drive signals S and S − are applied to each arm waveguide 114 so that the direction of the electric field is reversed for each different modulation region in the z-axis direction, and therefore a potential difference twice as large as that in single-phase drive is applied to each arm waveguide 114.
したがって、例えば、MZ光変調器10の信号電極が配置されている部分における変調効率を高めることができ、信号電極を配置する領域の長さ(z軸方向)を低減できる。よって、信号電極による光導波損失を低減することが可能である。また、特許文献1に記載されるようなRF基板が不要であるため、MZ光変調器10の部品点数の削減または構造の簡易化が可能になり、MZ光変調器10のサイズ低減も可能である。 Therefore, for example, it is possible to increase the modulation efficiency in the portion of the MZ optical modulator 10 where the signal electrodes are arranged, and reduce the length (z-axis direction) of the area where the signal electrodes are arranged. This makes it possible to reduce optical waveguide loss due to the signal electrodes. Furthermore, because an RF substrate such as that described in Patent Document 1 is not required, it is possible to reduce the number of parts in the MZ optical modulator 10 or simplify the structure, and it is also possible to reduce the size of the MZ optical modulator 10.
図3に、本実施形態の差動駆動(c)と、単相駆動(a)および通常差動駆動(b)との比較例を示す。この比較例では、供給電圧が2Vppd(1Vpps)である差動駆動ドライバによって光変調器が駆動されることを想定する。 Figure 3 shows a comparison example between the differential drive of this embodiment (c) and single-phase drive (a) and normal differential drive (b). In this comparison example, it is assumed that the optical modulator is driven by a differential drive driver with a supply voltage of 2 Vppd (1 Vpps).
電圧Vの添え字「ppd」は「peak-to-peak differential」の略記であり、添え字「pps」は「peak-to-peak single-end」の略記である。単相駆動(a)については、一方の差動駆動信号を光変調器への入力段手前で終端することを想定する。 The subscript "ppd" for voltage V is an abbreviation for "peak-to-peak differential," and the subscript "pps" is an abbreviation for "peak-to-peak single-end." For single-phase drive (a), it is assumed that one of the differential drive signals is terminated before the input stage to the optical modulator.
信号電極「S」または「S-」と接地電極「G」との間の基板面幅方向の距離は、比較の便宜のために、何れも距離「d」である。信号電極「S」は、差動駆動信号Sが与えられる電極を表し、信号電極「S-」は、差動駆動信号S-が与えられる電極を表す。なお、図3において、信号電極と導波路との位置関係を同一にして比較した背景は、信号電極による光導波損の増大の影響を同一として比較するためである。 For ease of comparison, the distance in the substrate surface width direction between the signal electrode "S" or "S - " and the ground electrode "G" is "d". The signal electrode "S" represents the electrode to which the differential drive signal S is applied, and the signal electrode "S - " represents the electrode to which the differential drive signal S - is applied. Note that in Figure 3, the positional relationship between the signal electrode and the waveguide is made the same for comparison, so that the effect of the signal electrode on the increase in optical waveguide loss is made the same.
単相駆動(a)の電極配置は、断面視において、2本のアーム導波路の間に1つの信号電極「S」が設けられ、かつ、2本のアーム導波路それぞれから離れた位置に接地電極「G」が1つずつ設けられた配置である。 In the single-phase drive (a) electrode arrangement, in cross-sectional view, one signal electrode "S" is provided between the two arm waveguides, and one ground electrode "G" is provided at a distance from each of the two arm waveguides.
通常差動駆動(b)の電極配置は、断面視において、2本のアーム導波路それぞれの両側に接地電極「G」と信号電極「S」または「S-」とのペアが設けられ、かつ、信号電極「S」および「S-」の間に別の接地電極「G」が設けられた配置である。 The electrode arrangement for normal differential drive (b) is such that, in a cross-sectional view, a pair of a ground electrode "G" and a signal electrode "S" or " S- " is provided on both sides of each of the two arm waveguides, and another ground electrode "G" is provided between the signal electrodes "S" and " S- ".
図3の(a)および(b)と(c)との比較から理解できるように、本実施形態の差動駆動(c)では、差動電位差ΔV=2Vを個々のアーム導波路114-1および114-2に印可できるので、電場の変化ΔE=E+-E-を、単相駆動(a)および通常差動駆動(b)に比べて、2倍(ΔE=2/d)にできる。 As can be seen from a comparison of (a), (b), and (c) in Figures 3A and 3B, in the differential drive (c) of this embodiment, a differential potential difference ΔV = 2V can be applied to each of the arm waveguides 114-1 and 114-2, so the change in electric field ΔE = E + -E - can be doubled (ΔE = 2/d) compared to the single-phase drive (a) and the normal differential drive (b).
<実施形態2>
図4は、実施形態2に係る光変調器40の構成例を示す模式的な上面図である。図5(A)は、図4のA-A′矢視断面図であり、図5(B)は、図4のB-B′矢視断面図であり、図5(C)は、図4のC-C′矢視断面図である。
<Embodiment 2>
Fig. 4 is a schematic top view showing an example of the configuration of an optical modulator 40 according to embodiment 2. Fig. 5(A) is a cross-sectional view taken along line A-A' in Fig. 4, Fig. 5(B) is a cross-sectional view taken along line B-B' in Fig. 4, and Fig. 5(C) is a cross-sectional view taken along line CC' in Fig. 4.
図4に例示した光変調器40は、MZ光変調器であり、図1に例示したMZ光変調器10と同様に、入力光カプラ112、アーム導波路114-1、114-2、および、出力光カプラ116を備える。 The optical modulator 40 illustrated in FIG. 4 is an MZ optical modulator, and like the MZ optical modulator 10 illustrated in FIG. 1, it includes an input optical coupler 112, arm waveguides 114-1 and 114-2, and an output optical coupler 116.
また、MZ光変調器40は、例示的に、差動駆動信号SおよびS-の一方(例えば、S)が印可される信号電極41と、差動駆動信号SおよびS-の他方(例えば、S-)が印可される信号電極43と、を備える。 Moreover, the MZ optical modulator 40 illustratively includes a signal electrode 41 to which one of the differential drive signals S and S − (for example, S) is applied, and a signal electrode 43 to which the other of the differential drive signals S and S − (for example, S − ) is applied.
一方の信号電極41には、例えば、上面視において、T字状のサブ電極411および413と、L字状のサブ電極412および414とが電気的に接続される。他方の信号電極43には、例えば、上面視において、T字状のサブ電極431および433と、L字状のサブ電極432および434とが電気的に接続される。 One signal electrode 41 is electrically connected to, for example, T-shaped sub-electrodes 411 and 413 and L-shaped sub-electrodes 412 and 414 when viewed from above. The other signal electrode 43 is electrically connected to, for example, T-shaped sub-electrodes 431 and 433 and L-shaped sub-electrodes 432 and 434 when viewed from above.
そして、図4に示すように、一方のアーム導波路114-1は、例えば、T字状のサブ電極411および431によってx軸方向両側が挟まれた第1の変調領域を有する。サブ電極411は、第1のサブ電極の一例であり、例えば、アーム導波路114-1のx軸方向両側のうちアーム導波路114-2に対して近い側に配置される。 As shown in FIG. 4, one arm waveguide 114-1 has a first modulation region sandwiched between T-shaped sub-electrodes 411 and 431 on both sides in the x-axis direction. Sub-electrode 411 is an example of a first sub-electrode, and is arranged, for example, on the side of arm waveguide 114-1 on both sides in the x-axis direction closer to arm waveguide 114-2.
サブ電極431は、第2のサブ電極の一例であり、例えば、アーム導波路114-1のx軸方向両側のうちアーム導波路114-2に対して遠い側に配置される。なお、サブ電極411および431は、差動駆動信号が印可される第1の電極セットの一例である。 Sub-electrode 431 is an example of a second sub-electrode, and is arranged, for example, on one of the x-axis sides of arm waveguide 114-1, farther from arm waveguide 114-2. Sub-electrodes 411 and 431 are an example of a first electrode set to which a differential drive signal is applied.
他方のアーム導波路114-2は、例えば、L字状のサブ電極412および432によってx軸方向両側が挟まれた第2の変調領域を有する。第2の変調領域は、例示的に、アーム導波路114-1における第1の変調領域とは光伝搬方向(z軸方向)においてずれた領域であり得る。第1の変調領域と第2の変調領域とは、光伝搬方向(z軸方向)において互いに重複しない領域であってもよいし、部分的に重複する領域であってもよい。 The other arm waveguide 114-2 has, for example, a second modulation region sandwiched on both sides in the x-axis direction by L-shaped sub-electrodes 412 and 432. The second modulation region may, for example, be a region shifted in the light propagation direction (z-axis direction) from the first modulation region in arm waveguide 114-1. The first modulation region and second modulation region may be regions that do not overlap with each other in the light propagation direction (z-axis direction), or may be regions that partially overlap with each other.
サブ電極412は、第3のサブ電極の一例であり、例えば、アーム導波路114-2のx軸方向両側のうちアーム導波路114-1に対して近い側に配置される。サブ電極432は、第4のサブ電極の一例であり、例えば、アーム導波路114-2のx軸方向両側のうちアーム導波路114-1に対して遠い側に配置される。サブ電極412および432は、差動駆動信号が印可される第2の電極セットの一例である。 Sub-electrode 412 is an example of a third sub-electrode, and is arranged, for example, on one of the two sides of arm waveguide 114-2 in the x-axis direction, closer to arm waveguide 114-1. Sub-electrode 432 is an example of a fourth sub-electrode, and is arranged, for example, on one of the two sides of arm waveguide 114-2 in the x-axis direction, farther from arm waveguide 114-1. Sub-electrodes 412 and 432 are an example of a second electrode set to which a differential drive signal is applied.
さらに、一方のアーム導波路114-1は、T字状のサブ電極413および433によってx軸方向両側が挟まれた第3の変調領域を有する。第3の変調領域は、例示的に、アーム導波路114-2における第2の変調領域とは光伝搬方向(z軸方向)においてずれた領域であり得る。 Furthermore, one arm waveguide 114-1 has a third modulation region sandwiched on both sides in the x-axis direction by T-shaped sub-electrodes 413 and 433. The third modulation region may, for example, be a region offset in the light propagation direction (z-axis direction) from the second modulation region in arm waveguide 114-2.
他方のアーム導波路114-2は、L字状のサブ電極414および434によってx軸方向両側が挟まれた第4の変調領域を有する。第4の変調領域は、例示的に、アーム導波路114-1における第3の変調領域とは光伝搬方向(z軸方向)においてずれた領域であり得る。 The other arm waveguide 114-2 has a fourth modulation region sandwiched on both sides in the x-axis direction by L-shaped sub-electrodes 414 and 434. The fourth modulation region may, for example, be a region offset in the light propagation direction (z-axis direction) from the third modulation region in arm waveguide 114-1.
第2の変調領域と第3の変調領域とは、光伝搬方向(z軸方向)において互いに重複しない領域であってもよいし、部分的に重複する領域であってもよい。同様に、第3の変調領域と第4の変調領域とは、光伝搬方向(z軸方向)において互いに重複しない領域であってもよいし、部分的に重複する領域であってもよい。 The second modulation region and the third modulation region may be regions that do not overlap with each other in the light propagation direction (z-axis direction), or they may be regions that partially overlap with each other. Similarly, the third modulation region and the fourth modulation region may be regions that do not overlap with each other in the light propagation direction (z-axis direction), or they may be regions that partially overlap with each other.
第3の変調領域の電極配置は、第1の変調領域の電極配置と等価であってよく、第4の変調領域の電極配置は、第2の変調領域の電極配置と等価であってよい。別言すれば、MZ光変調器40は、第1の変調領域の電極配置と第2の変調領域の電極配置とが、アーム導波路114間において光伝搬方向に沿って交互に繰り返される構成を有し得る。 The electrode arrangement of the third modulation region may be equivalent to the electrode arrangement of the first modulation region, and the electrode arrangement of the fourth modulation region may be equivalent to the electrode arrangement of the second modulation region. In other words, the MZ optical modulator 40 may have a configuration in which the electrode arrangement of the first modulation region and the electrode arrangement of the second modulation region are alternately repeated along the light propagation direction between the arm waveguides 114.
このように、第1から第4の変調領域は、図4の上面視において、アーム導波路114-1および114-2の間において光伝搬方向(z軸方向)に沿って交互に配置される。別言すれば、図4に例示したMZ光変調器40は、2本のアーム導波路114のそれぞれにおいて部分的(または断続的)に電極に挟まれた部分的な変調領域が、両アーム導波路114の間において光伝搬方向(z軸方向)に沿って交互に切り替わる構成を有する。 In this way, the first to fourth modulation regions are arranged alternately along the light propagation direction (z-axis direction) between the arm waveguides 114-1 and 114-2 in the top view of FIG. 4. In other words, the MZ optical modulator 40 illustrated in FIG. 4 has a configuration in which partial modulation regions partially (or intermittently) sandwiched between electrodes in each of the two arm waveguides 114 alternate along the light propagation direction (z-axis direction) between the two arm waveguides 114.
各変調領域の光伝搬方向における配置間隔(ピッチ)、別言すると、z軸方向におけるサブ電極間のピッチは、例えば、第1から第4の変調領域の長さが変調電気信号の最大波長に対して十分に小さくなる(例えば、1/20以下となる)ように設計され得る。これにより、例えば、アーム導波路に変調電気信号を印加するサブ電極の光伝搬方向の長さが、周波数依存性の影響を受けない長さになる。非限定的な一例として、変調領域のそれぞれを形成する個々のサブ電極のアーム導波路114に沿った部分の長さは10マイクロメートル(μm)~100μm程度であり得る。 The spacing (pitch) between the modulation regions in the light propagation direction, in other words, the pitch between the sub-electrodes in the z-axis direction, can be designed, for example, so that the lengths of the first to fourth modulation regions are sufficiently small relative to the maximum wavelength of the modulated electrical signal (for example, 1/20 or less). This allows, for example, the length of the sub-electrode that applies the modulated electrical signal to the arm waveguide in the light propagation direction to be a length that is not affected by frequency dependency. As a non-limiting example, the length of the portion of each sub-electrode that forms each modulation region along the arm waveguide 114 can be approximately 10 micrometers (μm) to 100 μm.
なお、図4には、両アーム導波路114間において交互に切り替わる部分的な変調領域のセットが光伝搬方向に沿って2つ繰り返して設けられる例(合計4つの変調領域)が例示されているが、3つ以上のセットが光伝搬方向に沿って繰り返し設けられてもよい。 Note that Figure 4 illustrates an example in which two sets of partial modulation regions that alternate between both arm waveguides 114 are repeatedly provided along the light propagation direction (a total of four modulation regions), but three or more sets may also be repeatedly provided along the light propagation direction.
例えば、個々のサブ電極のアーム導波路114に沿った部分の長さが上述のように10μm~100μm程度であり、かつ、MZ光変調器40のz軸方向の長さが数ミリメートル(mm)程度である例を想定する。この場合、例えば、十数個~数十個といったオーダの多数の変調領域を、アーム導波路114の間において光伝搬方向(z軸方向)に沿って交互に配置可能である。 For example, consider an example in which the length of the portion of each sub-electrode along the arm waveguide 114 is approximately 10 μm to 100 μm, as described above, and the length of the MZ optical modulator 40 in the z-axis direction is approximately several millimeters (mm). In this case, a large number of modulation regions, on the order of, for example, a dozen to several tens, can be arranged alternately between the arm waveguides 114 along the light propagation direction (z-axis direction).
また、図4には、光伝搬方向に対して、アーム導波路114-1、アーム導波路114-2の順に部分的な変調領域が交互に配置された例が示されるが、逆に、アーム導波路114-2、アーム導波路114-1の順に部分的な変調領域が交互に配置されてもよい。 Furthermore, while Figure 4 shows an example in which partial modulation regions are alternately arranged in the order of arm waveguide 114-1 and arm waveguide 114-2 in the light propagation direction, the partial modulation regions may alternatively be arranged in the order of arm waveguide 114-2 and arm waveguide 114-1.
さらに、アーム導波路114-1および114-2のそれぞれの両側に光伝搬方向に沿って部分的(または断続的)に配置されるサブ電極(符号省略)の形状は、T字状またはL字状に限定されない。例えば、サブ電極のそれぞれは、信号電極41または43に電気的に接続され、かつ、個々のアーム導波路114の両側に沿って部分的に延在する電極部分を有する形状であれば足りる。 Furthermore, the shape of the sub-electrodes (reference numerals omitted) arranged partially (or intermittently) along the light propagation direction on both sides of each of the arm waveguides 114-1 and 114-2 is not limited to a T-shape or an L-shape. For example, it is sufficient for each of the sub-electrodes to be electrically connected to the signal electrode 41 or 43 and have an electrode portion that extends partially along both sides of the respective arm waveguide 114.
以上に説明したような電極配置において、信号電極41に差動駆動信号Sが印可され、かつ、信号電極43に差動駆動信号S-が印可されると、個々の変調領域ごとにx軸方向成分の向きが反転する電場が両アーム導波路114に対して与えられる。 In the electrode arrangement described above, when a differential drive signal S is applied to the signal electrode 41 and a differential drive signal S − is applied to the signal electrode 43, an electric field is applied to both arm waveguides 114 such that the direction of the x-axis component is reversed for each modulation region.
したがって、実施形態1と同様に、プッシュプル動作が実現され、単相駆動に比べて2倍の電位差を個々のアーム導波路114に印可することが可能である。また、実施形態1に比して、光伝搬方向のサブ電極間ピッチを狭小化(別言すると、光伝搬方向のサブ電極配置密度を増加)できる。 Therefore, similar to embodiment 1, push-pull operation is achieved, and it is possible to apply twice the potential difference to each arm waveguide 114 compared to single-phase drive. Furthermore, compared to embodiment 1, the pitch between the sub-electrodes in the light propagation direction can be narrowed (in other words, the sub-electrode arrangement density in the light propagation direction can be increased).
光伝搬方向のサブ電極間ピッチの狭小化によって、1つのアーム導波路114あたりの変調領域数を増やし易いので、例えば、MZ光変調器40の変調効率向上と、MZ光変調器40のサイズ低減(例えば、z軸方向の長さ短縮)とを見込むことができる。 By narrowing the pitch between the sub-electrodes in the light propagation direction, it is easy to increase the number of modulation regions per arm waveguide 114, which can be expected to improve the modulation efficiency of the MZ optical modulator 40 and reduce the size of the MZ optical modulator 40 (e.g., shorten the length in the z-axis direction).
<サブ電極の配線例>
次に、図5(A)~図5(C)を参照して、図4に例示した各サブ電極と信号電極41または43との断面視における電気的な接続(配線)例について説明する。図5(A)~図5(C)に例示したように、各サブ電極と信号電極41または43との間は、多層配線によって電気的に接続されてよい。
<Sub-electrode wiring example>
Next, with reference to Figures 5(A) to 5(C), an example of electrical connection (wiring) in cross section between each sub-electrode illustrated in Figure 4 and signal electrode 41 or 43 will be described. As illustrated in Figures 5(A) to 5(C), each sub-electrode and signal electrode 41 or 43 may be electrically connected by multilayer wiring.
例えば、信号電極41および43のそれぞれは、上部クラッド層104の上面において、各アーム導波路114-1および114-2のそれぞれからx軸方向に離れた位置に配置される。 For example, each of the signal electrodes 41 and 43 is positioned on the upper surface of the upper cladding layer 104 at a distance in the x-axis direction from each of the arm waveguides 114-1 and 114-2.
そして、図5(A)に例示したように、第1の変調領域を形成するT字状のサブ電極411および431それぞれのz軸方向に延在する電極部分は、LN層103上においてアーム導波路114-1の幅方向両側に配置される。 As shown in Figure 5(A), the electrode portions extending in the z-axis direction of the T-shaped sub-electrodes 411 and 431 that form the first modulation region are arranged on both sides of the arm waveguide 114-1 in the width direction on the LN layer 103.
当該電極部分のそれぞれが、図5(A)の断面視において、アーム導波路114の上方を通るようにクランク状に形成された電極部分(または配線)を通じて、上部クラッド層104上面に配置された信号電極41および43に接続される。なお、「クランク状」は例示に過ぎず、「クランク状」とは異なる形状の電極部分(または配線)が電極間接続に適用されてよい。この点は、以降の説明においても同様である。 Each of these electrode portions is connected to signal electrodes 41 and 43 arranged on the upper surface of the upper clad layer 104 through an electrode portion (or wiring) formed in a crank shape so as to pass above the arm waveguide 114 in the cross-sectional view of Figure 5(A). Note that the "crank shape" is merely an example, and electrode portions (or wiring) of shapes other than the "crank shape" may be used for inter-electrode connections. This also applies to the following explanations.
一方、図5(B)に例示したように、第2の変調領域を形成するL字状のサブ電極412および432のうち、サブ電極412のz軸方向に延在する電極部分は、LN層103上においてアーム導波路114-2の幅方向両側のうちアーム導波路114-1に対して近い側に配置される。 On the other hand, as shown in Figure 5(B), of the L-shaped sub-electrodes 412 and 432 that form the second modulation region, the electrode portion of the sub-electrode 412 that extends in the z-axis direction is positioned on the LN layer 103 on either side of the arm waveguide 114-2 in the width direction, closer to the arm waveguide 114-1.
また、図5(C)に例示したように、第2の変調領域を形成するL字状のサブ電極412および432のうち、サブ電極432のz軸方向に延在する電極部分は、LN層103上においてアーム導波路114-2の幅方向両側のうちアーム導波路114-1に対して遠い側に配置される。 Furthermore, as shown in FIG. 5(C), of the L-shaped sub-electrodes 412 and 432 that form the second modulation region, the electrode portion of the sub-electrode 432 that extends in the z-axis direction is disposed on the LN layer 103 on either side of the arm waveguide 114-2 in the width direction, farther from the arm waveguide 114-1.
そして、サブ電極412および432それぞれのLN層103上に配置された電極部分が、それぞれ、断面視において、アーム導波路114の上方を通るようにクランク状に形成された電極部分(または配線)を通じて、信号電極41および43に接続される。 The electrode portions of the sub-electrodes 412 and 432 arranged on the LN layer 103 are connected to the signal electrodes 41 and 43, respectively, through crank-shaped electrode portions (or wiring) that pass above the arm waveguide 114 in cross-sectional view.
なお、信号電極41および43と個々のサブ電極との間の配線は、断面視において、アーム導波路114の上方において、全部がy軸について同じ高さであってもよいし、一部または全部が異なる高さであってもよい。また、アーム導波路114をy軸方向において超える部分の配線は、アーム導波路114に対して、例えば、サブ電極に光が吸収されることによる光損失が生じないような距離、例えば、2μm程度の間隔がy軸方向に確保される設計であり得る。これらの点は、後述する実施形態3においても同様である。 In addition, the wiring between the signal electrodes 41 and 43 and the individual sub-electrodes may all be at the same height in the y-axis above the arm waveguide 114 in a cross-sectional view, or some or all of them may be at different heights. Furthermore, the wiring that extends beyond the arm waveguide 114 in the y-axis direction may be designed to maintain a distance from the arm waveguide 114 in the y-axis direction that prevents optical loss due to light absorption by the sub-electrodes, for example, a spacing of approximately 2 μm. These points also apply to embodiment 3, which will be described later.
また、第3の変調領域を形成するT字状のサブ電極413および431と信号電極41および43との接続(または配線)形態は、図5(A)に例示した第1の変調領域の接続形態と同等と理解されてよい。 Furthermore, the connection (or wiring) form between the T-shaped sub-electrodes 413 and 431 and the signal electrodes 41 and 43 that form the third modulation region may be understood to be equivalent to the connection form of the first modulation region illustrated in Figure 5(A).
同様に、第4の変調領域を形成するL字状のサブ電極414および434と信号電極41および43との接続(または配線)形態は、図5(B)および図5(C)に例示した第2の変調領域の接続形態と同等と理解されてよい。 Similarly, the connection (or wiring) form between the L-shaped sub-electrodes 414 and 434 that form the fourth modulation area and the signal electrodes 41 and 43 can be understood to be equivalent to the connection form of the second modulation area illustrated in Figures 5(B) and 5(C).
以上のように、信号電極41または43と何れか1つまたは複数のサブ電極との電気的な接続に多層配線を利用することで、例えば、個々のアーム導波路114との物理的な干渉および/または配線間の意図しない接触を空間的に回避した適切な配線が容易になる。したがって、例えば、z軸方向におけるサブ電極間ピッチも調整し易くなる。 As described above, by using multilayer wiring to electrically connect the signal electrode 41 or 43 to one or more sub-electrodes, it becomes easier to provide appropriate wiring that spatially avoids, for example, physical interference with the individual arm waveguides 114 and/or unintended contact between the wiring. Therefore, it also becomes easier to adjust the pitch between the sub-electrodes in the z-axis direction, for example.
なお、図5(A)~図5(C)に例示した接続形態は、多層配線による接続形態の例であるが、図4に例示した各サブ電極と信号電極41または43との断面視における電気的な接続(配線)は、単層配線による接続形態であってもよい。 Note that the connection configurations illustrated in Figures 5(A) to 5(C) are examples of connection configurations using multi-layer wiring, but the electrical connection (wiring) between each sub-electrode and signal electrode 41 or 43 in the cross-sectional view illustrated in Figure 4 may also be a connection configuration using single-layer wiring.
例えば、図5(A)~図5(C)において、信号電極41および43は、サブ電極が設けられたLN層103上に設けられてもよく、この場合、上部クラッド層104内において(別言すると、他の層を経由せずに)各サブ電極と信号電極41または43とを電気的に接続する配線が設けられてよい。 For example, in Figures 5(A) to 5(C), the signal electrodes 41 and 43 may be provided on the LN layer 103 on which the sub-electrodes are provided, and in this case, wiring may be provided within the upper cladding layer 104 (in other words, without passing through other layers) to electrically connect each sub-electrode to the signal electrode 41 or 43.
このような単層配線についても、アーム導波路114をy軸方向において超える部分の配線は、アーム導波路114に対して、例えば、サブ電極に光が吸収されることによる光損失が生じないような距離、例えば、2μm程度の間隔がy軸方向に確保される設計であり得る。 Even in such single-layer wiring, the wiring portion that extends beyond the arm waveguide 114 in the y-axis direction can be designed to maintain a distance from the arm waveguide 114 in the y-axis direction that prevents optical loss due to light absorption by the sub-electrode, for example, a spacing of approximately 2 μm.
<実施形態3>
図6は、実施形態3に係る光変調器60の構成例を示す模式的な上面図である。図7(A)は、図6のA-A′矢視断面図であり、図7(B)は、図6のB-B′矢視断面図であり、図7(C)は、図6のC-C′矢視断面図である。
<Embodiment 3>
Fig. 6 is a schematic top view showing a configuration example of an optical modulator 60 according to embodiment 3. Fig. 7(A) is a cross-sectional view taken along line A-A' in Fig. 6, Fig. 7(B) is a cross-sectional view taken along line B-B' in Fig. 6, and Fig. 7(C) is a cross-sectional view taken along line C-C' in Fig. 6.
図6に例示した光変調器60は、MZ光変調器であり、実施形態2の図4に例示したMZ光変調器40の構成において、アーム導波路114-2についてのL字状のサブ電極のそれぞれがT字状のサブ電極に置換され、光伝搬方向のサブ電極間ピッチが図4の例よりも狭小化された構成に相当する。 The optical modulator 60 illustrated in FIG. 6 is an MZ optical modulator, and corresponds to a configuration in which, in the configuration of the MZ optical modulator 40 illustrated in FIG. 4 of embodiment 2, each of the L-shaped sub-electrodes for the arm waveguide 114-2 is replaced with a T-shaped sub-electrode, and the pitch between the sub-electrodes in the light propagation direction is narrower than in the example of FIG. 4.
例えば、信号電極41には、上面視において、T字状のサブ電極411および413と、T字状のサブ電極612および614とが電気的に接続される。他方の信号電極43には、例えば、上面視において、T字状のサブ電極431および433と、T字状のサブ電極632および634とが電気的に接続される。 For example, when viewed from above, signal electrode 41 is electrically connected to T-shaped sub-electrodes 411 and 413 and T-shaped sub-electrodes 612 and 614. For example, when viewed from above, signal electrode 43 is electrically connected to T-shaped sub-electrodes 431 and 433 and T-shaped sub-electrodes 632 and 634.
そして、図6に示すように、一方のアーム導波路114-1は、例えば、T字状のサブ電極411および431によってx軸方向両側が挟まれた第1の変調領域を有する。他方のアーム導波路114-2は、例えば、T字状のサブ電極612および632によってx軸方向両側が挟まれた第2の変調領域を有する。 As shown in FIG. 6, one arm waveguide 114-1 has a first modulation region sandwiched on both sides in the x-axis direction by, for example, T-shaped sub-electrodes 411 and 431. The other arm waveguide 114-2 has a second modulation region sandwiched on both sides in the x-axis direction by, for example, T-shaped sub-electrodes 612 and 632.
同様に、一方のアーム導波路114-1は、T字状のサブ電極413および433によってx軸方向両側が挟まれた第3の変調領域を有する。他方のアーム導波路114-2は、T字状のサブ電極614および634によってx軸方向両側が挟まれた第4の変調領域を有する。 Similarly, one arm waveguide 114-1 has a third modulation region sandwiched on both sides in the x-axis direction by T-shaped sub-electrodes 413 and 433. The other arm waveguide 114-2 has a fourth modulation region sandwiched on both sides in the x-axis direction by T-shaped sub-electrodes 614 and 634.
別言すると、実施形態3において、第2の変調領域および第4の変調領域のサブ電極配置が、実施形態2(図4)のL字状のサブ電極配置からT字状のサブ電極配置に置換されている。したがって、MZ光変調器60は、第1から第4の変調領域のそれぞれがT字状のサブ電極配置を有する。 In other words, in embodiment 3, the sub-electrode arrangements of the second modulation region and the fourth modulation region are replaced with T-shaped sub-electrode arrangements from the L-shaped sub-electrode arrangements of embodiment 2 (Figure 4). Therefore, in the MZ optical modulator 60, each of the first to fourth modulation regions has a T-shaped sub-electrode arrangement.
なお、実施形態2と同様に、第1から第4の変調領域は、光伝搬方向(z軸方向)において互いにずれた領域であってよい。第1から第4の変調領域は、光伝搬方向において、互いに重複しない領域であってもよいし、部分的に重複する領域であってもよい。 As in embodiment 2, the first to fourth modulation regions may be regions that are offset from one another in the light propagation direction (z-axis direction). The first to fourth modulation regions may be regions that do not overlap one another in the light propagation direction, or may be regions that partially overlap one another.
図6に例示したように、第2の変調領域において、2つのT字状のサブ電極612および632が、そのx軸方向の向きを互い違いに組み合わせて配置される。同様に、第4の変調領域において、2つのT字状のサブ電極614および634が、そのx軸方向の向きを互い違いに組み合わせて配置される。 As shown in FIG. 6, in the second modulation region, two T-shaped sub-electrodes 612 and 632 are arranged with their x-axis directions oriented in a staggered manner. Similarly, in the fourth modulation region, two T-shaped sub-electrodes 614 and 634 are arranged with their x-axis directions oriented in a staggered manner.
このような互い違いの配置によって、光伝搬方向についてのサブ電極間ピッチが、L字状のサブ電極配置を採用した実施形態2よりも短縮される。別言すれば、光伝搬方向についてのサブ電極配置密度を高めることができる。 This staggered arrangement reduces the pitch between the sub-electrodes in the light propagation direction compared to embodiment 2, which uses an L-shaped sub-electrode arrangement. In other words, the sub-electrode arrangement density in the light propagation direction can be increased.
その一方で、アーム導波路114のそれぞれをx軸方向両側において挟み込む個々のサブ電極部分、別言すると、個々のアーム導波路114を伝搬する光が変調を受ける変調領域それぞれの長さについては、光伝搬方向に長尺化し易くなる。 On the other hand, the length of each of the sub-electrode portions that sandwich each arm waveguide 114 on both sides in the x-axis direction, in other words, the length of each modulation region where light propagating through each arm waveguide 114 is modulated, can be easily increased in the light propagation direction.
例えば、実施形態2においてL字状のサブ電極の接続形態に単層配線を適用した例では、z軸方向のサブ電極間の重なりが許容されないため、サブ電極間ピッチを狭小化するのにも限界がある。そのため、アーム導波路114のそれぞれをx軸方向両側において挟み込む個々のサブ電極部分の光伝搬方向への長尺化が制限され得る。 For example, in the example of embodiment 2 where single-layer wiring is used to connect the L-shaped sub-electrodes, overlap between the sub-electrodes in the z-axis direction is not permitted, and there is a limit to how narrow the pitch between the sub-electrodes can be. This can limit the length in the light propagation direction of the individual sub-electrode portions that sandwich each of the arm waveguides 114 on both sides in the x-axis direction.
これに対し、上述のように互い違いに組み合わせて配置される個々のT字状のサブ電極の接続形態に、図7(A)~図7(C)にて後述するような多層配線を適用した例では、z軸方向のサブ電極間の重なりを許容できるので、サブ電極間ピッチを狭小化し易い。したがって、アーム導波路114のそれぞれをx軸方向両側において挟み込む個々のサブ電極部分の光伝搬方向への長尺化が容易になる。 In contrast, in an example in which multilayer wiring, as described below in Figures 7(A) to 7(C), is applied to the connection configuration of individual T-shaped sub-electrodes arranged in a staggered combination as described above, overlap between sub-electrodes in the z-axis direction is permitted, making it easier to narrow the pitch between sub-electrodes. Therefore, it becomes easier to elongate the individual sub-electrode portions that sandwich each arm waveguide 114 on both sides in the x-axis direction in the light propagation direction.
以上のように、実施形態3のサブ電極配置によれば、実施形態2(図4)のサブ電極配置に比して、MZ光変調器60の更なるサイズ低減(例えば、光伝搬方向の短尺化)と、変調領域の長尺化による更なる変調効率の向上とに寄与し得る。 As described above, the sub-electrode arrangement of embodiment 3 can contribute to further reducing the size of the MZ optical modulator 60 (e.g., shortening the length in the light propagation direction) and further improving modulation efficiency by lengthening the modulation region, compared to the sub-electrode arrangement of embodiment 2 (Figure 4).
図7(A)~図7(C)に、図6に例示したT字状の各サブ電極と信号電極41または43との間を、多層配線によって電気的に接続した例を示す。多層配線を用いることで、上述したようなサブ電極間ピッチの狭小化を容易に実現できる。なお、図7(A)は、図5(A)に例示した第1の変調領域についてのサブ電極配線例と同等である。 Figures 7(A) to 7(C) show an example in which each T-shaped sub-electrode shown in Figure 6 is electrically connected to signal electrode 41 or 43 using multi-layer wiring. By using multi-layer wiring, it is easy to narrow the pitch between the sub-electrodes as described above. Note that Figure 7(A) is equivalent to the sub-electrode wiring example for the first modulation region shown in Figure 5(A).
例えば、図7(B)に示したように、第2の変調領域を形成するT字状のサブ電極612および632それぞれのz軸方向に延在する電極部分は、LN層103上においてアーム導波路114-2の幅方向両側に配置される。 For example, as shown in Figure 7(B), the electrode portions extending in the z-axis direction of the T-shaped sub-electrodes 612 and 632 that form the second modulation region are arranged on both sides of the arm waveguide 114-2 in the width direction on the LN layer 103.
そして、図7(B)に例示するように、サブ電極612のLN層103上に配置された電極部分が、断面視において、アーム導波路114-2の上方を通るようにクランク状に形成された電極部分(または配線)を通じて、信号電極41に接続される。 As shown in Figure 7(B), the electrode portion of the sub-electrode 612 arranged on the LN layer 103 is connected to the signal electrode 41 through an electrode portion (or wiring) formed in a crank shape so as to pass above the arm waveguide 114-2 in a cross-sectional view.
同様に、図7(C)に例示するように、サブ電極632のLN層103上に配置された電極部分が、断面視において、2本のアーム導波路114それぞれの上方を通るようにクランク状に形成された電極部分(または配線)を通じて、信号電極43に接続される。 Similarly, as illustrated in Figure 7(C), the electrode portion of the sub-electrode 632 arranged on the LN layer 103 is connected to the signal electrode 43 through an electrode portion (or wiring) formed in a crank shape so as to pass above each of the two arm waveguides 114 in a cross-sectional view.
なお、第3の変調領域を形成するT字状のサブ電極413および431と信号電極41および43との接続(または配線)形態も、図7(A)に例示した第1の変調領域の接続形態と同等と理解されてよい。 The connection (or wiring) between the T-shaped sub-electrodes 413 and 431 that form the third modulation region and the signal electrodes 41 and 43 may also be understood to be equivalent to the connection configuration of the first modulation region illustrated in Figure 7(A).
同様に、第4の変調領域を形成するT字状のサブ電極614および634と信号電極41および43との接続(または配線)形態は、図7(B)および図7(C)に例示した第2の変調領域の接続形態と同等と理解されてよい。 Similarly, the connection (or wiring) form between the T-shaped sub-electrodes 614 and 634 that form the fourth modulation region and the signal electrodes 41 and 43 may be understood to be equivalent to the connection form of the second modulation region illustrated in Figures 7(B) and 7(C).
<実施形態4>
上述した実施形態2および3においては、信号電極41および43とサブ電極との電気的な接続に、単層配線または多層配線を適用可能であることについて説明した。代替的に、信号電極41および43とサブ電極との電気的な接続には、例えば、ワイヤボンディング等によるワイヤ配線が適用されてもよい。その一例を図8に示す。
<Fourth Embodiment>
In the above-described second and third embodiments, it has been described that single-layer wiring or multi-layer wiring can be applied to the electrical connection between the signal electrodes 41 and 43 and the sub-electrodes. Alternatively, wire wiring by, for example, wire bonding may be applied to the electrical connection between the signal electrodes 41 and 43 and the sub-electrodes. An example of this is shown in FIG. 8 .
図8は、実施形態4に係る光変調器80の構成例を示す模式的な上面図である。図8に例示した光変調器80は、MZ光変調器であり、既述の実施形態1~3と同様に、入力光カプラ112、アーム導波路114-1、114-2、および、出力光カプラ116を備える。また、MZ光変調器80は、例示的に、差動駆動信号Sが与えられる信号電極41と、差動駆動信号S-が与えられる信号電極43と、を備える。 Fig. 8 is a schematic top view showing an example of the configuration of an optical modulator 80 according to embodiment 4. The optical modulator 80 shown in Fig. 8 is an MZ optical modulator, and similar to the above-described embodiments 1 to 3, includes an input optical coupler 112, arm waveguides 114-1 and 114-2, and an output optical coupler 116. The MZ optical modulator 80 also includes, for example, a signal electrode 41 to which a differential drive signal S is applied, and a signal electrode 43 to which a differential drive signal S - is applied.
一方の信号電極41には、例えば、上面視において、直線状のサブ電極811~814のそれぞれがワイヤ配線850によって電気的に接続される。他方の信号電極43には、例えば、上面視において、直線状のサブ電極831~834のそれぞれがワイヤ配線870によって電気的に接続される。 For example, when viewed from above, linear sub-electrodes 811 to 814 are electrically connected to one signal electrode 41 by wire wiring 850. For example, when viewed from above, linear sub-electrodes 831 to 834 are electrically connected to the other signal electrode 43 by wire wiring 870.
そして、図8に示すように、一方のアーム導波路114-1は、例えば、サブ電極811および831によってx軸方向両側が挟まれた第1の変調領域を有する。他方のアーム導波路114-2は、例えば、サブ電極812および832によってx軸方向両側が挟まれた第2の変調領域を有する。 As shown in FIG. 8, one arm waveguide 114-1 has a first modulation region sandwiched on both sides in the x-axis direction by sub-electrodes 811 and 831. The other arm waveguide 114-2 has a second modulation region sandwiched on both sides in the x-axis direction by sub-electrodes 812 and 832.
同様に、一方のアーム導波路114-1は、サブ電極813および833によってx軸方向両側が挟まれた第3の変調領域を有する。他方のアーム導波路114-2は、サブ電極814および834によってx軸方向両側が挟まれた第4の変調領域を有する。 Similarly, one arm waveguide 114-1 has a third modulation region sandwiched on both sides in the x-axis direction by sub-electrodes 813 and 833. The other arm waveguide 114-2 has a fourth modulation region sandwiched on both sides in the x-axis direction by sub-electrodes 814 and 834.
なお、実施形態2と同様に、第1から第4の変調領域は、光伝搬方向(z軸方向)において互いにずれた領域であってよい。第1から第4の変調領域は、光伝搬方向において、互いに重複しない領域であってもよいし、部分的に重複する領域であってもよい。 As in embodiment 2, the first to fourth modulation regions may be regions that are offset from one another in the light propagation direction (z-axis direction). The first to fourth modulation regions may be regions that do not overlap one another in the light propagation direction, or may be regions that partially overlap one another.
したがって、例えば、信号電極41および43に、それぞれ、差動駆動信号SおよびS-が与えられると、実施形態1~3と同様に、両アーム導波路114の間において、z軸方向の異なる変調領域ごとにx軸方向の電場の向きが交互に反転する。 Therefore, for example, when differential drive signals S and S − are applied to the signal electrodes 41 and 43, respectively, the direction of the electric field in the x-axis direction alternates between the two arm waveguides 114 for different modulation regions in the z-axis direction, as in the first to third embodiments.
よって、単相駆動に比べて2倍の電位差を個々のアーム導波路114に印可することができ、MZ光変調器80の変調効率を高めることができる。また、実施形態1~3と同様に、特許文献1に記載されるようなRF基板が不要であるため、MZ光変調器80の部品点数の削減または構造の簡易化が可能になり、MZ光変調器80のサイズ低減も可能である。 As a result, a potential difference twice as large as that in single-phase driving can be applied to each arm waveguide 114, thereby increasing the modulation efficiency of the MZ optical modulator 80. Furthermore, as with embodiments 1 to 3, an RF substrate such as that described in Patent Document 1 is not required, which makes it possible to reduce the number of parts in the MZ optical modulator 80 or simplify the structure, and also reduce the size of the MZ optical modulator 80.
さらに、実施形態4では、多層配線のプロセスを用いなくてもよいため、例えば、所期のサブ電極配置を簡便に実現でき、MZ光変調器80の製造コスト低減に寄与し得る。 Furthermore, in embodiment 4, since it is not necessary to use a multilayer wiring process, for example, the desired sub-electrode arrangement can be easily achieved, which can contribute to reducing the manufacturing costs of the MZ optical modulator 80.
また、実施形態4では、例えば、上部クラッド層104内において個々のアーム導波路114の上方を横切る電極部分または配線を不要にできるので、横切り配線によって個々のアーム導波路114を伝搬する光に損失が生じることを回避または抑制できる。 Furthermore, in embodiment 4, for example, it is possible to eliminate the need for electrode portions or wiring that cross above each individual arm waveguide 114 within the upper cladding layer 104, thereby avoiding or suppressing losses in light propagating through each individual arm waveguide 114 due to crossing wiring.
<実施形態5>
上述した実施形態1~4において、信号電極41および43それぞれからx軸方向に離れた上部クラッド層104上には、信号電極41および43に沿ってz軸方向に延在する接地電極(G)が設けられてもよい。
<Embodiment 5>
In the above-described embodiments 1 to 4, a ground electrode (G) extending in the z-axis direction along the signal electrodes 41 and 43 may be provided on the upper clad layer 104 away from each of the signal electrodes 41 and 43 in the x-axis direction.
実施形態2の図4に示したMZ光変調器40の構成を例にすると、例えば図9に示すように、信号電極41および43それぞれからx軸方向に離れた位置の上部クラッド層104上に、接地電極45および47がx軸方向において対称に設けられてよい。 Using the configuration of the MZ optical modulator 40 shown in Figure 4 of embodiment 2 as an example, as shown in Figure 9, ground electrodes 45 and 47 may be provided symmetrically in the x-axis direction on the upper cladding layer 104 at positions spaced apart in the x-axis direction from the signal electrodes 41 and 43, respectively.
接地電極45および47を設けることで、両アーム導波路114間で光伝搬方向に交互に形成される個々の変調領域においてサブ電極間に生じる電場を安定化できる。したがって、例えば、入力光カプラ112、2本のアーム導波路114、および、出力光カプラ116から成るMZ光変調器ブロックが、複数チャネルに対応して、または、IQ変調器として、x軸方向に複数個並列に配置されるような場合に、MZ光変調器ブロック間において生じ得るクロストークを抑制でき、接地電極45および47を設けない場合に比して、光変調効率を向上させることができる。 By providing the ground electrodes 45 and 47, the electric field generated between the sub-electrodes in the individual modulation regions formed alternately in the light propagation direction between the two arm waveguides 114 can be stabilized. Therefore, for example, when multiple MZ optical modulator blocks consisting of an input optical coupler 112, two arm waveguides 114, and an output optical coupler 116 are arranged in parallel in the x-axis direction to accommodate multiple channels or as an IQ modulator, crosstalk that can occur between the MZ optical modulator blocks can be suppressed, and optical modulation efficiency can be improved compared to when the ground electrodes 45 and 47 are not provided.
<補足事項>
上述した実施形態1~5において、例えば、光伝搬方向のサブ電極間ピッチを狭小化する(別言すれば、光伝搬方向におけるサブ電極の配置密度を高くする)ほど、サブ電極の容量に起因して高周波線路としてのインピーダンスが低下し得る。
<Additional information>
In the above-described embodiments 1 to 5, for example, the narrower the pitch between the sub-electrodes in the light propagation direction (in other words, the higher the density of the sub-electrodes in the light propagation direction), the lower the impedance as a high-frequency line can be due to the capacitance of the sub-electrodes.
また、サブ電極の容量が増えるほど、高周波電気信号である差動駆動信号の速度も低下し得るため、差動駆動信号と高周波アーム導波路114の変調領域において変調を受ける光との間の速度整合が取れなくなるおそれがある。 Furthermore, as the capacitance of the sub-electrode increases, the speed of the differential drive signal, which is a high-frequency electrical signal, may also decrease, which may result in a loss of speed matching between the differential drive signal and the light being modulated in the modulation region of the high-frequency arm waveguide 114.
そのため、光伝搬方向におけるサブ電極の配置密度は、電気と光の速度整合条件に基づいて決定され得る。例えば、速度整合条件を満たし得る範囲において、高周波線路に求められるインピーダンスと、差動駆動信号の電気的な速度とに基づいて、サブ電極の配置密度が決定されてよい。 Therefore, the placement density of the sub-electrodes in the light propagation direction can be determined based on the electrical and optical velocity matching conditions. For example, the placement density of the sub-electrodes can be determined based on the impedance required for the high-frequency line and the electrical velocity of the differential drive signal, within the range that satisfies the velocity matching conditions.
本開示において使用した「接続」という用語は、「結合」に読み替えられてもよい。「接続」または「結合」は、2つ以上の要素間の直接的または間接的なあらゆる「接続」または「結合」を意味すると理解されてよい。例えば、相互に「接続」または「結合」された2つの要素間に1つまたは複数の中間要素が介在する間接的な「接続」または「結合」も当該用語に含まれると理解されてよい。 The term "connect" used in this disclosure may be read as "coupled." "Connected" or "coupled" may be understood to mean any direct or indirect "connection" or "coupling" between two or more elements. For example, the term may be understood to include an indirect "connection" or "coupling" where one or more intermediate elements are interposed between two elements that are "connected" or "coupled" to each other.
「第1の・・・」、「第2の・・・」といった呼称を付記した要素へのいかなる参照も、それらの要素の量または順序を限定しない。これらの呼称は、2つ以上の要素間を単に区別するための便宜的な方法として使用されるに過ぎない。例えば、第1および第2の要素への参照は、2つの要素のみが採用され得ることを意味せず、また、第1の要素が第2の要素に何らかの物理量において優先されなければならないことを意味しない。 Any reference to an element followed by a designation such as "first...", "second...", etc. does not limit the quantity or order of those elements. These designations are merely used as a convenient method to distinguish between two or more elements. For example, reference to a first and a second element does not imply that only two elements may be employed, nor does it imply that the first element must precede the second element in any physical quantity.
以上、本開示について詳細に説明したが、本開示を通じて説明した内容に本開示の趣旨および範囲が限定されないことは当業者に明らかである。本開示は、請求の範囲の記載によって定まる本開示の趣旨および範囲を逸脱することなく修正および変更態様として実施可能である。したがって、本開示の記載は、例示的な説明を目的とし、本開示の趣旨および範囲に対して何らの制限的な意味を有さない。 Although the present disclosure has been described in detail above, it will be clear to those skilled in the art that the spirit and scope of the present disclosure are not limited to the content described throughout the present disclosure. The present disclosure can be implemented in modified and altered forms without departing from the spirit and scope of the present disclosure, which are defined by the claims. Therefore, the description of the present disclosure is intended for illustrative purposes only and does not have any limiting meaning on the spirit and scope of the present disclosure.
本開示は、例えば、光通信技術に有用である。 This disclosure is useful, for example, in optical communication technology.
10、40、60、80 光変調器
41、43 信号電極
45、47 接地電極
101 基板
102 下部クラッド層
103 LN層
104 上部クラッド層
112 入力光カプラ
114-1、114-2 光導波路(アーム導波路)
116 出力光カプラ
122a-1、122a-2、122b-1、122b-2 信号電極
411~414、431~434、612、614、632、634、811~814、831~834 サブ電極
850、870 ワイヤ配線
10, 40, 60, 80 Optical modulator 41, 43 Signal electrode 45, 47 Ground electrode 101 Substrate 102 Lower cladding layer 103 LN layer 104 Upper cladding layer 112 Input optical coupler 114-1, 114-2 Optical waveguide (arm waveguide)
116 Output optical coupler 122a-1, 122a-2, 122b-1, 122b-2 Signal electrodes 411 to 414, 431 to 434, 612, 614, 632, 634, 811 to 814, 831 to 834 Sub-electrodes 850, 870 Wire wiring
Claims (6)
電気光学効果を有する材料によって構成され、前記入力光カプラにより2分岐された光のそれぞれを導波する第1の光導波路および第2の光導波路と、
前記第1の光導波路および前記第2の光導波路それぞれの出力光を結合する出力光カプラと、
前記第1の光導波路の第1の領域に沿って両側に設けられて差動駆動信号が印可される第1の電極セットと、
前記光の伝搬方向において前記第1の領域からずれた領域に対応する前記第2の光導波路の第2の領域に沿って両側に設けられて前記差動駆動信号が印可される第2の電極セットと、を備え、
前記第1の電極セットによって前記第1の領域に生じる電界の向きと、前記第2の電極セットによって前記第2の領域に生じる電界の向きとが逆方向である、光変調器。 an input optical coupler;
a first optical waveguide and a second optical waveguide, each made of a material having an electro-optic effect, for guiding each of the two beams of light branched by the input optical coupler;
an output optical coupler that couples the output light from the first optical waveguide and the output light from the second optical waveguide;
a first set of electrodes disposed on opposite sides of a first region of the first optical waveguide and adapted to receive a differential drive signal;
a second electrode set provided on both sides along a second region of the second optical waveguide corresponding to a region shifted from the first region in the propagation direction of the light, and to which the differential drive signal is applied;
An optical modulator, wherein a direction of an electric field generated in the first region by the first electrode set is opposite to a direction of an electric field generated in the second region by the second electrode set.
前記差動駆動信号の他方の信号が印可される第2の信号電極と、をさらに備え、
前記第1の電極セットは、
前記第1の領域の両側のうち前記第2の光導波路に対して近い側に設けられ、かつ、前記第1の信号電極に電気的に接続された第1のサブ電極と、
前記第1の領域の両側のうち前記第2の光導波路に対して遠い側に設けられ、かつ、前記第2の信号電極に電気的に接続された第2のサブ電極と、を含み、
前記第2の電極セットは、
前記第2の領域の両側のうち前記第1の光導波路に対して遠い側に設けられ、かつ、前記第1の信号電極に電気的に接続された第3のサブ電極と、
前記第2の領域の両側のうち前記第1の光導波路に対して近い側に設けられ、かつ、前記第2の信号電極に電気的に接続された第4のサブ電極と、を含む、請求項1に記載の光変調器。 a first signal electrode to which one of the differential drive signals is applied;
a second signal electrode to which the other of the differential drive signals is applied;
The first electrode set comprises:
a first sub-electrode provided on one of both sides of the first region closer to the second optical waveguide and electrically connected to the first signal electrode;
a second sub-electrode provided on one of both sides of the first region farther from the second optical waveguide and electrically connected to the second signal electrode;
The second electrode set comprises:
a third sub-electrode provided on one of both sides of the second region farther from the first optical waveguide and electrically connected to the first signal electrode;
2. The optical modulator according to claim 1, further comprising: a fourth sub-electrode provided on one of both sides of the second region closer to the first optical waveguide and electrically connected to the second signal electrode.
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