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WO2025243782A1 - Dispositif d'alimentation en gaz, système d'alimentation en gaz et procédé d'alimentation en gaz - Google Patents

Dispositif d'alimentation en gaz, système d'alimentation en gaz et procédé d'alimentation en gaz

Info

Publication number
WO2025243782A1
WO2025243782A1 PCT/JP2025/015963 JP2025015963W WO2025243782A1 WO 2025243782 A1 WO2025243782 A1 WO 2025243782A1 JP 2025015963 W JP2025015963 W JP 2025015963W WO 2025243782 A1 WO2025243782 A1 WO 2025243782A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas
unit
separation
product
recovery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/JP2025/015963
Other languages
English (en)
Japanese (ja)
Inventor
洋志 ▲高▼
秀治 清水
竜弥 岩本
吉史 和田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Sanso Holdings Corp
Original Assignee
Nippon Sanso Holdings Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Sanso Holdings Corp filed Critical Nippon Sanso Holdings Corp
Priority to JP2025549410A priority Critical patent/JP7782107B1/ja
Publication of WO2025243782A1 publication Critical patent/WO2025243782A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2015—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate the substrate being of crystalline semiconductor material, e.g. lattice adaptation, heteroepitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Definitions

  • This disclosure relates to a gas supply device, a gas supply system, and a gas supply method.
  • Patent Document 1 discloses a gas supply device for semiconductor manufacturing equipment. This gas supply device supplies gas to a process chamber such as a batch-type processing reactor that processes multiple wafers simultaneously.
  • the gas supply device is equipped with a gas supply source, a gas introduction pipe, a gas main pipe, and multiple branch pipes.
  • the gas main pipe and branch pipes are equipped with pressure-type flow controllers.
  • the pressure-type flow controller has a pressure detector installed in the gas main pipe, and a control valve and orifice installed in the branch pipe. The flow rate is determined in a flow calculation circuit based on the pressure detected by the pressure detector, and the control valve is controlled by the calculation control circuit based on the flow rate setting signal from the flow rate setting circuit and the flow rate from the flow rate calculation circuit.
  • An inert gas supply source and a process gas supply source are given as examples of gas supply sources.
  • Patent Document 2 discloses a method and apparatus for consistently supplying a constant composition of hydride gas used in semiconductor processing. This method involves electrochemically generating a first gas containing hydride, mixing the first gas with a second gas containing a diluent gas to create a product gas flow containing the diluent gas and hydride gas, monitoring the concentrations of the diluent gas and hydride gas in this gas flow, and executing a control program to maintain the ratio of hydride gas to diluent gas at a preset value over time.
  • Patent Document 3 discloses a gas recovery method that uses zeolite to adsorb and recover xenon.
  • Patent Document 4 discloses a microchannel chip reaction control system.
  • This microchannel chip reaction control system has at least two microchannels for introducing reagent solutions and a microreaction channel formed by joining the at least two microchannels.
  • the microchannel chip reaction control system also includes an analysis means for analyzing the product produced by the reaction between the reagent solutions that join in the microreaction channel, and a control means for controlling the conditions involved in the reaction in the microreaction channel based on the analysis results obtained from the analysis means.
  • control means constantly or for a set period of time monitors the temperature of the microchannel chip and the component ratio or component amount in the product produced in the microreaction channel, and by feeding back the monitoring results as needed, it is possible to control the temperature of the microchannel chip and the flow rate and concentration of each reagent solution.
  • Industrial gases need to be replaced with better alternatives, taking into consideration various factors such as environmental impact (e.g., global warming potential), safety (e.g., toxicity to the human body and corrosiveness to equipment and piping), functionality for industrial use, and cost.
  • environmental impact e.g., global warming potential
  • safety e.g., toxicity to the human body and corrosiveness to equipment and piping
  • functionality for industrial use, and cost.
  • a gas may not be possible to replace it due to the balance with other requirements.
  • a gas may have an extremely low global warming potential compared to conventionally used industrial gases, but be extremely costly.
  • a gas may have favorable characteristics for a specific function (e.g., semiconductor wafer etching performance) compared to conventionally used industrial gases, but may have low chemical stability and be difficult to use in terms of concentration control.
  • the operating conditions of the equipment are typically optimized on the assumption that the concentration and composition of the industrial gas being supplied will be constant. For example, if the concentration or composition of the industrial gas is unstable, this can cause a decrease in manufacturing yield or quality variations in the equipment that uses the industrial gas. Therefore, a stable supply of industrial gas is desired in gas supply equipment, gas supply systems, and gas supply methods that generate the industrial gas on-site.
  • This disclosure has been made in light of these circumstances, and its purpose is to provide a gas supply device, gas supply system, and gas supply method that can generate and stably supply industrial gas at the site where the industrial gas is used.
  • the gas supply device comprises: a processing unit for obtaining a product gas from a raw material gas containing raw material gas components; an introduction section for supplying the source gas to the processing section; and a delivery section that delivers the product gas from the processing section.
  • the gas supply system includes: a gas supply device and a process chamber that consumes the gas supplied from the gas supply device;
  • the gas supply device is a processing section for obtaining a product gas having a second composition from a feed gas having a first composition; an introduction section for supplying the source gas to the processing section; a delivery unit that delivers the product gas from the processing unit,
  • the process chamber is supplied with the entire amount of the product gas delivered from the delivery section.
  • the gas supply method includes: a product gasification step of obtaining a product gas from the raw material gas; a delivery step of directly delivering the product gas obtained in the product gasification step to a process chamber that consumes the product gas; In the sending step, delivering a total amount of the product gas to the process chamber; The product gas is supplied to the process chamber in a plug flow manner.
  • FIG. 1 is a block diagram showing the configuration of a gas supply device according to an embodiment of the present invention and a gas supply system including the gas supply device.
  • FIG. 2 is a block diagram of a configuration related to control of the gas supply device according to the present embodiment.
  • FIG. FIG. FIG. 2 is an explanatory diagram of a first separation and recovery machine.
  • FIG. 10 is a diagram illustrating the configuration of another processing unit.
  • FIG. 1 shows an example of a flow diagram of a gas supply device 100 according to this embodiment and a gas supply system 200 equipped with the same. First, an overview of the gas supply device 100 and the gas supply system 200 equipped with the same will be described.
  • the gas supply device 100 is a device that obtains a product gas from a raw material gas containing raw material gas components (an example of a product gasification process) and directly sends (supplies) this product gas to the next process.
  • the gas supply system 200 includes a gas supply device 100 and a process chamber 9 that consumes the product gas supplied from the gas supply device 100. That is, the gas supply device 100 directly delivers the product gas obtained by the gas supply device 100 to the process chamber 9 (an example of a delivery process). In this embodiment, the entire amount of the product gas obtained by the gas supply device 100 may be supplied to the process chamber 9. The product gas may be supplied from the gas supply device 100 to the process chamber 9 by plug flow.
  • An example of a process chamber 9 is a semiconductor manufacturing device such as a semiconductor wafer etching device.
  • the process chamber 9 is connected to the gas supply device 100 via, for example, a pipe 73 that carries the product gas.
  • the process chamber 9 is directly connected to the gas supply device 100 via the pipe 73, and is supplied with the entire amount of product gas produced by the gas supply device 100.
  • the product gas produced by the gas supply device 100 may be supplied to the process chamber 9 by plug flow from the gas supply device 100 through the pipe 73. After use in the process chamber 9, the product gas may be exhausted to an external exhaust gas treatment device or the like via a pipe 74 connected downstream of the process chamber 9.
  • the gas supply device 100 and a gas supply method using the same are described in detail below.
  • the gas supply device 100 may include a source S of raw gas components, a processing unit 1 that performs a process (product gasification process) to obtain a product gas and a residue gas from a raw gas containing the raw gas components, a monitoring unit 3 that monitors the status of the product gasification process in the processing unit 1, and a recovery unit 4 that recovers the raw gas components from the residue gas.
  • the gas supply device 100 may be supplied with raw gas components from cylinder units S1 and S2 that serve as the source S of the raw gas components.
  • the raw gas components recovered in the recovery unit 4 may be reused in the processing unit 1.
  • the raw material gas is a gas that serves as a raw material for obtaining the product gas.
  • the raw material gas contains raw material gas components for obtaining the product gas.
  • the raw material gas may contain one or more raw material gas components.
  • the raw material gas may also contain a carrier gas such as nitrogen, carbon dioxide, or an inert gas such as argon.
  • the raw material gas components of the raw material gas will be described later.
  • the raw gas components may be supplied from a supply source S having a gas reservoir, such as a gas bottle, cylinder, or tank.
  • the gas supply device 100 exemplifies a case in which the raw material gas components and raw material gas are supplied from the supply source S to the processing unit 1 as follows.
  • the supply source S includes cylinders as storage tanks for the raw material gas components and adjustment mechanisms such as regulators and flow control devices that adjust the pressure and flow rate of the gas containing the raw material gas components discharged from the cylinders.
  • a predetermined supply amount of gas containing the raw material gas components is discharged from cylinder units S1 and S2 to a group of supply pipes 79 such as pipes 79a and 79b.
  • the gas discharged to the group of supply pipes 79 is mixed, for example, in a mixer 89, to become raw material gas, which is then supplied to pipe 71.
  • the raw material gas is then supplied from pipe 71 to the processing unit 1.
  • the product gas is a gas containing components (hereinafter sometimes referred to as product gas components) that are consumed or used in the process chamber 9.
  • the product gas may contain a carrier gas such as nitrogen, carbon dioxide, or an inert gas such as argon.
  • carrier gas such as nitrogen, carbon dioxide, or an inert gas such as argon.
  • the gas supply device 100 may further include a control unit C that controls the operation of the supply source S, processing unit 1, monitoring unit 3, and collection unit 4, and a memory unit M that stores programs for controlling the processing unit 1, monitoring unit 3, and collection unit 4, parameters, and information related to the status of various operations.
  • the operation of the supply source S, processing unit 1, monitoring unit 3, and collection unit 4 may be performed by control or operation commands from the control unit C.
  • the description of the operation of the supply source S, processing unit 1, monitoring unit 3, and collection unit 4 the description of the control by the control unit C will be omitted as appropriate.
  • the control unit C will be described later.
  • the processing unit 1 may have a reaction chamber 10 that reacts the raw material gas (an example of a product gasification process) to obtain a product gas or a precursor gas of the product gas containing components of the product gas, and a separation unit 2 that separates the product gas from the raw material gas or precursor gas (an example of a product gasification process).
  • the processing unit 1 has at least one of the reaction chamber 10 and the separation unit 2. In this embodiment, it is not essential that the processing unit 1 have the reaction chamber 10 and the separation unit 2, but the following description will mainly exemplify a case in which the processing unit 1 has the reaction chamber 10 and the separation unit 2.
  • Processing section 1 may be supplied with a raw material gas containing raw material gas components from piping 71, which is an inlet that supplies the raw material gas to processing section 1.
  • Processing section 1 supplies the product gas to process chamber 9 via piping 73, which is an outlet that delivers the product gas.
  • piping 73 which is an outlet, is directly connected to process chamber 9, so that the product gas obtained in processing section 1 is delivered directly to process chamber 9. Therefore, the product gas obtained in processing section 1 is prevented from being altered by decomposition or side reactions, and is delivered to process chamber 9 with a stable concentration and composition.
  • the product gas can be generated in gas supply device 100 on the spot where it is used, and can be stably supplied to process chamber 9.
  • the reaction chamber 10 is a gas reaction device (reaction section) that may have, for example, a reaction field where the raw material gas is reacted (chemically reacted) to produce product gas components, and an energy supply source that supplies energy to promote the reaction.
  • reaction chambers 10 include plasma reactors, electrochemical reactors, high-temperature reactors, and photoreactors.
  • the reaction chamber 10 may be, for example, a push-flow type reaction device, and the container that defines the space that serves as the reaction field may be in the form of a pipe or a tank.
  • the size (device scale) of the reaction chamber 10 is not limited, and it may be a so-called micro-reaction device, such as a microfluidic chip, microreactor, or MEMS (Micro Electro Mechanical Systems).
  • a product gas or precursor gas is produced from the raw material gas.
  • the raw material gas may be supplied to the reaction chamber 10 via piping 71.
  • the precursor gas is supplied to the separation section 2 via piping 72, which connects the reaction chamber 10 and the separation section 2. Note that when a product gas is produced in the reaction chamber 10, the product gas may be supplied from the reaction chamber 10 to piping 73.
  • reaction chamber 10 it is preferable to cause a reaction in which 1 kJ or more of energy is input or output per 1 mol of product gas component produced by the reaction, i.e., a reaction in which the absolute value of the reaction enthalpy ( ⁇ H) is 1 kJ/mol or more.
  • Separation unit 2 is a separation mechanism that performs a separation process to separate product gas and residue gas from precursor gas, or to separate product gas and residue gas from raw material gas.
  • precursor gas and raw material gas may be collectively referred to simply as precursor, etc.
  • the separation section 2 may have a separation membrane that separates the product gas and the residual gas from the precursor, etc.
  • separation membranes are organosilica membranes, zeolite membranes, polyimide membranes, and silicone membranes.
  • the separation membrane may be selected depending on the components contained in the precursor, etc., the components contained in the product gas, and the components contained in the residual gas, and is not limited to the examples given above.
  • the separation unit 2 may have, for example, a first separator 21 and a second separator 22, as shown in FIG. 3.
  • the first separator 21 and the second separator 22 may each have a separation membrane appropriate for the components of the gas to be separated.
  • the first separator 21 and the second separator 22 may be arranged in series.
  • the first separator 21 is shown equipped with a membrane section 211 having a cylindrical separation membrane, and a cylindrical container 219 that houses the membrane section 211.
  • first separator 21 for example, precursors, etc. supplied from piping 72 are introduced into the cylindrical membrane section 211, and residual gas that has permeated the separation membrane is exhausted to piping 81.
  • piping 81 may be provided with a pump 81a such as a dry pump. The precursors, etc. from which some or all of the residual gas has been removed are supplied to piping 29 that connects the first separator 21 and the second separator 22.
  • the second separator 22 may include a membrane section 221 and a container 229.
  • precursors, etc. supplied from pipe 29 are introduced into the cylinder of the membrane section 221, and residual gas that has permeated the separation membrane is exhausted to pipe 82.
  • Pipe 82 may be provided with a pump 82a such as a dry pump. The product gas obtained by removing residual gas from the precursors, etc. is supplied to pipe 73.
  • the separation membrane of membrane portion 211 and the separation membrane of membrane portion 221 may be the same membrane, or may be different types of separation membrane.
  • the separation membrane of membrane portion 211 and the separation membrane of membrane portion 221 are different types of separation membranes that allow different components to permeate, as an example, and will be described below.
  • the monitoring unit 3 monitors the status of the product gasification process in the processing unit 1 and executes a monitoring process to acquire related information.
  • the monitoring unit 3 may be one or more measuring devices, analyzing devices, detecting devices, or a combination of these.
  • the monitoring unit 3 may acquire, as the status of the product gasification process in the processing unit 1, information related to the state of the reaction in the reaction chamber 10 (reaction information) and information related to the state of separation in the separation unit 2 (hereinafter, such information related to the state of the product gasification process in the processing unit 1 will be referred to as status information).
  • the status information is stored in the memory unit M (see Figure 2) as necessary.
  • the status information may include the status of the product gas, precursor gas, and residual gas, such as concentration, mass, composition, and composition information correlated or corresponding thereto; status such as temperature and pressure, and material status information correlated or corresponding thereto; and flow rate (flow velocity), and flow rate information correlated or corresponding thereto.
  • the state information in particular the composition information of the product gas, the material state information of the product gas, and the flow rate information of the product gas, may be collectively referred to as product information.
  • the state information in particular the composition information of the residual gas, the material state information of the residual gas, and the flow rate information of the residual gas, may be collectively referred to as residue information.
  • the state information relating to the state of separation in the separation unit 2 may be collectively referred to as separation information.
  • the monitoring unit 3 has a product monitoring unit 30 that executes a product information acquisition process to acquire product information, and residue monitoring units 31 and 32 that execute a residue information acquisition process to acquire residue information.
  • the monitoring unit 3 can monitor the product gas flowing through pipe 73, which is the delivery unit.
  • the monitoring unit 3 can also monitor the residue gas flowing through pipes 81 and 82.
  • the product monitoring unit 30 and residue monitoring units 31, 32 may be one or more measuring devices, analytical devices, detection devices, or a combination of these.
  • Examples of the product monitoring unit 30 and residue monitoring units 31, 32 are ultrasonic gas concentration meters, gas analyzers using NDIR (Non-Dispersive Infrared Absorption), and gas analyzers using vacuum deep ultraviolet spectroscopy, which can acquire at least one piece of information related to the concentration and composition of the product gas and residue gas.
  • ultrasonic gas concentration meters can acquire information related to the concentration and composition of the product gas and residue gas.
  • Gas analyzers using NDIR or vacuum deep ultraviolet spectroscopy can acquire information related to the absorbance of the product gas and residue gas.
  • product monitoring unit 30 and residue monitoring units 31, 32 are measuring instruments such as mass flow meters and flow meters that acquire information related to the mass of the product gas and residue gas.
  • the product monitoring unit 30 and residue monitoring units 31 and 32 are not limited to these and can be selected appropriately depending on the state of the product gas and residue gas.
  • the product monitoring unit 30 may be installed online or inline in the piping 73.
  • the residue monitoring units 31 and 32 may be installed online or inline in the pipes 81 and 82.
  • the recovery unit 4 is a recovery mechanism that performs a recovery process to recover raw gas components from the residual gas, which is the gas to be treated.
  • the recovery unit 4 may, for example, have a separation membrane that separates the raw gas components from the gas to be treated and recovers the raw gas components.
  • separation membranes include organosilica membranes, zeolite membranes, polyimide membranes, silicone membranes, carbon membranes, ionic liquid membranes, graphite oxide membranes, MXene membranes, and metal organic frameworks (MOF) membranes.
  • the separation membrane may be selected depending on the components contained in the precursor, etc., the components contained in the product gas, and the components contained in the residual gas, and is not limited to the examples given above.
  • the recovery unit 4 includes a first recovery unit 4A that receives a supply of residual gas from pipe 81 and sends a concentrated gas obtained by recovering raw gas components from the residual gas to pipe 83, and a second recovery unit 4B that receives a supply of residual gas from pipe 82 and sends a concentrated gas obtained by recovering raw gas components from the residual gas to pipe 84.
  • the first recovery unit 4A and the second recovery unit 4B may basically have the same structure.
  • Pipes 81 and 82 are equipped with a gas pump mechanism such as a dry pump, and this illustrates a case in which residual gas is sucked from the separation unit 2 and sent to the recovery unit 4.
  • the first recovery unit 4A is illustrated and described as the recovery unit 4.
  • the first recovery unit 4A and the second recovery unit 4B have the same basic configuration, so individual explanations of the second recovery unit 4B alone will be omitted in principle, with additional information provided as necessary.
  • the recovery section 4 may have, for example, one or more recovery units having separation membranes, and a distribution section 5 that distributes the gas to be treated to these recovery units, as shown in FIG. 4.
  • FIG. 4 illustrates a case in which the recovery section 4 has two or more recovery units. Specifically, it illustrates a case in which the recovery section 4 has a first separation recovery machine 41 (first recovery unit), a second separation recovery machine 42 (second recovery unit), and a third separation recovery machine 43 (third recovery unit) as recovery units.
  • the first separation recovery machine 41, second separation recovery machine 42, and third separation recovery machine 43 may be collectively referred to simply as the recovery units.
  • the first separation and recovery unit 41 has a membrane unit 410 having a separation membrane (e.g., cylindrical), a cylindrical container 419 that houses the membrane unit 410, an inlet pipe 411 that introduces the gas to be treated into the container 419, an outlet pipe 412 that sends out concentrated gas in which the raw gas components have been concentrated to the next process, and an exhaust pipe 413 that exhausts waste gas (gas to be discarded), which is the residue of the gas to be treated after the concentrated gas has been recovered, to the outside of the system.
  • a separation membrane e.g., cylindrical
  • a cylindrical container 419 that houses the membrane unit 410
  • an inlet pipe 411 that introduces the gas to be treated into the container 419
  • an outlet pipe 412 that sends out concentrated gas in which the raw gas components have been concentrated to the next process
  • an exhaust pipe 413 that exhausts waste gas (gas to be discarded), which is the residue of the gas to be treated after the concentrated gas has been recovered, to the outside of the system.
  • the second separation and recovery device 42 and the third separation and recovery device 43 shown in Figure 4 may have the same structure as the first separation and recovery device 41.
  • the components other than the raw material gas components permeate the membrane section 420 and are sent as waste gas via the exhaust pipe 423 to the exhaust pipe 85 (exhaust pipe 86 in the case of the second recovery unit 4B) and discharged outside the system, while the concentrated gas is sent to the delivery pipe 422.
  • some or all of the components other than the raw material gas components permeate the membrane section 430 and are sent as waste gas via the exhaust pipe 433 to the exhaust pipe 85 (exhaust pipe 86 in the case of the second recovery section 4B) and discharged outside the system, while the concentrated gas is sent to the delivery pipe 432.
  • the separation membranes of each recovery unit may be the same size, structure, or type, or they may be different.
  • membrane sections 410, 420, and 430 may be the same separation membrane, or they may be different separation membranes.
  • Valve devices 41a, 42a, 43a that switch between allowing and prohibiting the flow of the gas to be treated may be disposed in the inlet pipes 411, 421, 431.
  • valve devices 41b, 42b, 43b that switch between allowing and prohibiting the flow of concentrated gas may be disposed in the outlet pipes 412, 422, 432.
  • Valve devices 41a, 42a, 43a and valve devices 41b, 42b, 43b may be closed when there is no need to pass gas through the inlet pipes 411, 421, 431 or the outlet pipes 412, 422, 432 or when gas should not be passed, and may be open when gas should be passed.
  • the distribution unit 5 is a flow path switching mechanism that can control the supply of gas, change of supply destination, and stop of supply, such as a valve device or flow control device that distributes the gas to be treated to the recovery units.
  • the distribution unit 5 distributes the gas to be treated to two or more recovery units by switching between series, parallel, or independently based on status information. Note that in this embodiment, the concept of distribution also includes cases where the gas to be treated is not supplied.
  • the distribution unit 5 includes three-way valves 51, 52, and 53, a pipe 510 connecting the three-way valves 51 and 52, a pipe 520 connecting the three-way valves 52 and 53, and a pipe 530 connecting the three-way valve 53 to the pipe 83 or the pipe 84.
  • Pipe 510 is connected to a delivery pipe 412 through which concentrated gas is delivered from the first separation and recovery machine 41, and is capable of receiving a supply of concentrated gas from the first separation and recovery machine 41 via the delivery pipe 412.
  • pipe 520 is connected to a delivery pipe 422, and is capable of receiving a supply of concentrated gas from the second separation and recovery machine 42.
  • pipe 530 is connected to a delivery pipe 432, and is capable of receiving a supply of concentrated gas from the third separation and recovery machine 43.
  • the three-way valve 51 is connected to the pipe 81, the inlet pipe 411, and the pipe 510, and is switchable between a first state in which the gas to be treated supplied from the pipe 81 is supplied to the first separation and recovery unit 41 via the inlet pipe 411 and is not supplied to the pipe 510, and a second state in which the gas is supplied to the pipe 510 and is not supplied to the inlet pipe 411 or the first separation and recovery unit 41.
  • the three-way valve 52 is connected to the pipe 510, the inlet pipe 421, and the pipe 520, and is switchable between a first state in which the gas to be treated supplied from the pipe 510 is supplied to the second separation and recovery unit 42 via the inlet pipe 421 but not to the pipe 520, and a second state in which the gas is supplied to the pipe 520 but not to the inlet pipe 421 or the second separation and recovery unit 42.
  • the three-way valve 53 is connected to the pipe 520, the inlet pipe 431, and the pipe 530, and is switchable between a first state in which the gas to be treated supplied from the pipe 520 is supplied to the third separation and recovery unit 43 via the inlet pipe 431 but is not supplied to the pipe 530, and a second state in which the gas is supplied to the pipe 530 but is not supplied to the inlet pipe 431 or the third separation and recovery unit 43.
  • the distribution unit 5 connects two or more recovery units in series or switches between them individually by switching the state of each of the three-way valves 51, 52, and 53, supplying the gas to be treated to these recovery units and obtaining concentrated gas.
  • the concentrated gas sent to pipes 83, 84 is returned to cylinder units S1, S2, mixed again in mixer 89, and reused as raw material gas.
  • Figure 1 illustrates an example in which the concentrated gas sent to pipes 83, 84 is returned to cylinder units S1, S2, but the concentrated gas sent to pipes 83, 84 is not limited to being returned to cylinder units S1, S2, and may also be returned to pipes 79a, 79b or mixer 89.
  • the piping configuration when the concentrated gas is reused as raw material gas is not limited to the example shown in this embodiment, and can be modified as appropriate.
  • the operation control of the control unit C and the gas supply device 100 will be described.
  • the operation control of the gas supply device 100 may be performed by the control unit C.
  • the operation and control of the processing unit 1, monitoring unit 3, and recovery unit 4 may be performed based on commands from the control unit C.
  • the control unit C is the central control mechanism of the gas supply device 100 that controls the supply source S, the processing unit 1, the monitoring unit 3, and the recovery unit 4.
  • the control unit C includes one or more processors.
  • the "processor” is a general-purpose processor or a dedicated processor specialized for a specific process, but is not limited to these.
  • the processor may be, for example, a CPU (Central Processing Unit), MPU (Micro Processing Unit), GPU (Graphics Processing Unit), DSP (Digital Signal Processor), ASIC (Application Specific Integrated Circuit), etc.
  • the control unit C may control the entire gas supply device 100, including the processing unit 1, the monitoring unit 3, and the recovery unit 4.
  • the memory unit M can store programs and parameters for controlling the gas supply device 100, such as the supply source S, processing unit 1, monitoring unit 3, and recovery unit 4, as well as status information related to the status of various operations.
  • the memory unit M can include any memory module, including an HDD (Hard Disk Drive), an SSD (Solid State Drive), an EEPROM (Electrically Erasable Programmable Read-Only Memory), a ROM (Read-Only Memory), and a RAM (Random Access Memory).
  • the memory unit M may function, for example, as a main memory device, an auxiliary memory device, or a cache memory.
  • the memory unit M is not limited to being built into the gas supply device 100, but may also be an external database or external memory module connected via a digital input/output port such as a USB (Universal Serial Bus) port.
  • FIG. 2 illustrates an example in which a setting value input unit 18 that inputs setting information for the gas supply device 100, such as setting parameters for the reaction in the reaction chamber 10 (see FIG. 1) of the processing unit 1 and the separation process in the separation unit 2 (see FIG. 1), is further connected to an alarm unit 19 that notifies status information and other operational information for the gas supply device 100.
  • a setting value input unit 18 that inputs setting information for the gas supply device 100, such as setting parameters for the reaction in the reaction chamber 10 (see FIG. 1) of the processing unit 1 and the separation process in the separation unit 2 (see FIG. 1), is further connected to an alarm unit 19 that notifies status information and other operational information for the gas supply device 100.
  • An example of the alarm unit 19 is a speaker or monitor that notifies status information stored in the memory unit M and other operational information for the gas supply device 100 by voice (e.g., alarm sound) or image display. If the alarm unit 19 has a monitor, the monitor may be a touch panel that also serves as the setting value input unit 18.
  • the control unit C may control the state of the processing unit 1 based on the setting parameters and status information (particularly product information) acquired by the monitoring unit 3.
  • the processing unit 1 may control the state of its processing based on the setting parameters and status information.
  • the control unit C may control the reaction of the raw material gas in the reaction chamber 10 of the processing unit 1 based on the setting parameters and status information.
  • the control unit C may control the state of separation in the separation unit 2 based on the setting parameters and status information.
  • control unit C may control the reaction in the reaction chamber 10 and the state of separation in the separation unit 2 so that at least one of the concentration and composition of the product gas remains constant.
  • the amount of energy supplied to the reaction field in the reaction chamber 10 may be increased or decreased depending on the degree of the difference, thereby promoting or suppressing the reaction in the reaction chamber 10 so that the concentration of the predetermined component in the product gas or the composition of the product gas approaches the target value.
  • the concentration of a predetermined component in the product gas or the composition of the product gas differs from a target value (one example of the above-mentioned setting parameter, the target quality of the product gas supplied to the process chamber 9)
  • at least one of the supply rate of the raw material gas supplied from the supply source S (cylinder units S1, S2), the supply pressure of the raw material gas, and the supply ratio of the raw material gas components may be changed depending on the degree of the difference, thereby changing the supply rate, supply pressure, and supply ratio of the gas components supplied to the reaction chamber 10 and the separation unit 2, thereby promoting or suppressing the reaction in the reaction chamber 10 so that the concentration of the predetermined component in the product gas or the composition of the product gas approaches the target value, or controlling the separation state in the separation unit 2 (for example, gas separation performance such as the permeability coefficient).
  • These controls allow the gas supply device 100 to efficiently generate product gas at the site where the product gas is to be used. Furthermore, when the gas supply device 100 generates product gas at the site where the product gas is to be used, a stable supply of product gas can be achieved.
  • examples of the amount of energy supplied to the reaction field in the reaction chamber 10 include the plasma output in a plasma reactor, the current output in an electrochemical reactor, the amount of heat supplied in a high-temperature reactor, and the amount of light in a photoreactor.
  • the control unit C controls the distribution unit 5 of the recovery unit 4 based on the setting parameters and the status information, particularly residue information, acquired by the monitoring unit 3, and distributes the gas to be treated to two or more recovery units by switching between series, parallel, or individual configurations.
  • Information related to the performance and characteristics of the separation membranes possessed by the first separation recovery unit 41, second separation recovery unit 42, and third separation recovery unit 43 is another example of the setting parameters mentioned above.
  • first separation and recovery unit 41, second separation and recovery unit 42, and third separation and recovery unit 43 shown in Figure 4 have separation membranes with the same characteristics.
  • the distribution unit 5 when the three-way valves 51, 52, and 53 are in the first state, the first separation and recovery unit 41, second separation and recovery unit 42, and third separation and recovery unit 43 are connected in series in this order, and the gas to be treated flows through in this order.
  • the amount of raw gas components in the residual gas supplied from pipe 81 as the gas to be treated is large (for example, when the concentration of the raw gas components is high or the flow rate of the residual gas is high), it may be possible to improve the recovery rate of raw gas components in the concentrated gas by connecting two or more recovery units in series and bringing the gas to be treated into contact with a separation membrane with a larger area.
  • the first separation and recovery unit 41 and the third separation and recovery unit 43 are connected in series in this order, the gas to be treated flows through in this order, and the gas to be treated does not flow through the second separation and recovery unit 42.
  • the amount of raw gas components in the residual gas supplied from the pipe 81 as the gas to be treated is not particularly large, it may be possible to use one or two recovery units (in this example, the first separation and recovery unit 41 and the third separation and recovery unit 43) for recovery processing and rest the remaining recovery unit (in this example, the second separation and recovery unit 42).
  • two or more recovery units can be connected in series for use in the recovery process, or they can be switched individually for use.
  • the combination of the states of the three-way valves 51, 52, and 53 in the distribution unit 5 may be referred to as the distribution state of the distribution unit 5.
  • changing (switching) the combination of the states of the three-way valves 51, 52, and 53 may be referred to as changing the distribution state of the distribution unit 5.
  • control unit C changes the distribution state of the distribution unit 5 to a state in which two or more recovery units are connected in series in an arrangement according to the concentration (residue information) of the raw material gas components in the residual gas, or may switch the distribution state of the distribution unit 5 to a state in which a recovery unit is connected alone, thereby distributing (supplying) the residual gas to these recovery units in series or to a single recovery unit.
  • control unit C changes the distribution state of the distribution unit 5 in accordance with the concentration (residue information) of the raw material gas components in the residual gas, and switches the combination and connection state (series, individual) of the recovery units to be used.
  • changing the distribution state of the distribution unit 5 is not limited to being done in accordance with the concentration of the raw material gas components in the residual gas.
  • control unit C may change the distribution state of the distribution unit 5 in accordance with the gas composition in the residual gas (another example of residue information). Specifically, the control unit C may change the distribution state of the distribution unit 5 by selecting a recovery unit that is suitable for the type of raw material gas component in the residual gas or a by-product gas (e.g., a gas generated in the reaction chamber 10 and contained in the residual gas). That is, the control unit C can select at least one recovery unit that is suitable for the composition of the residual gas and change the distribution state of the distribution unit 5 so that the residual gas is supplied to the selected recovery unit as the gas to be treated.
  • a recovery unit that is suitable for the type of raw material gas component in the residual gas or a by-product gas (e.g., a gas generated in the reaction chamber 10 and contained in the residual gas). That is, the control unit C can select at least one recovery unit that is suitable for the composition of the residual gas and change the distribution state of the distribution unit 5 so that the residual gas is supplied to the selected recovery unit as the gas to be treated
  • the control unit C can change the distribution state of the distribution unit 5 so that the residual gas is supplied to a more suitable recovery unit based on the residue information and information related to the type of separation membrane of each recovery unit.
  • control unit C selects at least one recovery unit that is compatible with the composition of the residual gas and changes the distribution state of the distribution unit 5 so as to supply the residual gas as the gas to be treated to the selected recovery unit
  • the control unit C may change the distribution state of the distribution unit 5 so as to connect two or more recovery units in series in an arrangement according to the composition of the residual gas, and supply the residual gas to the recovery unit.
  • a specific example is as follows: If the separation membranes of the first separation recovery unit 41 and the second separation recovery unit 42 shown in Figure 4 are suitable for gas type A (an example of a raw gas component) (for example, do not allow gas type A to pass through), and the separation membrane of the third separation recovery unit 43 is unsuitable for gas type A (for example, allows gas type A to pass through), the control unit C (see Figures 1 and 2) may change the distribution state of the distribution unit 5 so that the first separation recovery unit 41 and the second separation recovery unit 42 are used in series or individually for recovery processing.
  • the control unit C may change the distribution state of the distribution unit 5 so that the first separation recovery unit 41 and the second separation recovery unit 42 are used in series or individually for recovery processing.
  • control unit C may change the distribution state of the distribution unit 5 so that the second separation recovery device 42 and the third separation recovery device 43 are used in series or individually for the recovery process.
  • control unit C shown in Figure 1 changes the distribution state of the distribution unit 5 in accordance with the residue information, and switches the combination and connection state of the collection units to be used between series and individual.
  • changes to the distribution state of the distribution unit 5 and the combination and connection state of the collection units to be used in accordance with the residue information are not limited to the above example.
  • the first recovery section 4A and the second recovery section 4B have the same basic configuration, but the combination of recovery units in the first recovery section 4A and the second recovery section 4B and the separation membranes used in each recovery unit may differ depending on the composition of the target gas to be recovered. Furthermore, the operational control and distribution state of the distribution section 5 in the first recovery section 4A and the operational control and distribution state of the distribution section 5 in the second recovery section 4B may differ depending on the composition of the target gas to be recovered.
  • the following describes the source gas, product gas, and residue gas that can be used with the gas supply device 100 of this embodiment.
  • the source gas may contain at least one component selected from the group consisting of CF-based gas, CHF-based gas, chlorine-based gas, bromine-based gas, iodine-based gas, and hydride-based gas.
  • the source gas may also be a mixture of these exemplary gases, and may contain at least one component selected from these exemplary gases.
  • CF - based gases examples include CF4 , C2F6 , and C4F8 .
  • CHF - based gases examples include CH3F , CHF3 , and C3H2F4 .
  • chlorine-based gases examples include ClF3 , HCl, and Cl2 .
  • bromine-based gases examples include BrF, BrCl, and Br2 .
  • iodine-based gases examples include IF, IBr, and ICl, I2 .
  • Examples of hydride-based gases are AsH 3 , GeH 4 and SiH 4 .
  • the raw material gas components that the raw material gas may contain are not limited to the gases exemplified above.
  • the raw material gas may contain components that serve as sources of carbon, oxygen, hydrogen, nitrogen, etc., depending on the product gas to be produced.
  • the raw material gas may contain, for example, CO 2 , CO, hydrocarbon gas, H 2 O, H 2 , N 2 , and ammonia as sources of carbon, oxygen, hydrogen, and nitrogen.
  • product gas components of the product gas are CF4 , COF2 , AsH3, GeH4 , Ge2H6 , SiH4 , SiH3 , and GeH3 .
  • the product gas may be a mixture of these example gases, and the product gas may include at least one component selected from these example gases.
  • a raw material gas containing CF4 and CO2 as raw material gas components can be reacted to produce a precursor gas or product gas containing CF4 , CO2 , and COF2 , a product gas consisting of CF4 , or a product gas consisting of COF2 .
  • the product gas consisting of CF4 can be obtained by separating CF4 as a product gas from a precursor gas containing CF4 , CO2 , and COF2 using the separation unit 2.
  • the product gas consisting of COF2 can be obtained by separating COF2 as a product gas from a precursor gas containing CF4 , CO2 , and COF2 using the separation unit 2. If the residual gas contains CF4 or CO2 , these can be recovered and reused as raw material gas components.
  • a source gas containing H2 as a carrier gas and ASH3 as a source gas component can be used to obtain a product gas containing ASH3 at a higher concentration (e.g., twice the concentration) than the source gas, with H2 as the carrier gas.
  • the source gas in processing unit 1, the source gas is not reacted in reaction chamber 10, or is introduced to separation unit 2 bypassing reaction chamber 10, where H2 is separated from the source gas as a residual gas, and the remainder is obtained as a product gas. If the residual gas contains ASH3 , it can be recovered and reused as a source gas component.
  • a precursor gas or product gas containing GeH4 and Ge2H6 , with H2 as the carrier gas, can be obtained by reacting a source gas containing H2 as a carrier gas and GeH4 as a source gas component.
  • the ratios of GeH4 , Ge2H6 , and H2 can be adjusted by increasing or decreasing the amount of energy supplied to the reaction field in reaction chamber 10 to increase or decrease the amount of Ge2H6 produced, or by separating GeH4 and H2 from the precursor gas as residual gas in separation unit 2, and obtaining the remainder as product gas. If GeH4 is contained in the residual gas, it can be recovered and reused as a source gas component.
  • a precursor gas or product gas containing SiH4, GeH4 , and SiH3GeH3 , with H2 as the carrier gas can be obtained by reacting a source gas containing H2 as a carrier gas and containing SiH4 , GeH4 , and SiH3GeH3 .
  • the ratios of SiH4 , GeH4 , SiH3GeH3 , and H2 can be adjusted by increasing or decreasing the amount of energy supplied to the reaction field in reaction chamber 10 , or by increasing or decreasing the amounts of components separated from the precursor gas in separation unit 2 to form a residual gas. If the residual gas contains SiH4 or GeH4 , these can be recovered and reused as source gas components.
  • the processing section 1 shown in Fig. 1 has the reaction chamber 10 and the separation section 2.
  • the reaction chamber 10 is not essential to the processing section 1, and the processing section 1 may not have the reaction chamber 10.
  • the raw material gas components of the raw material gas may be the same as the product gas components of the product gas.
  • the separation unit 2 may concentrate the raw material gas components (i.e., the product gas components) from the raw material gas to obtain the product gas.
  • a specific example of this concentration would be the following: When the raw material gas contains 5% by volume of B2H6 and 95% by volume of N2 , and the product gas component of the product gas is B2H6 , a gas in which B2H6 is concentrated (e.g., a gas containing 20% by volume of B2H6 and 80% by volume of N2 ) is obtained as the product gas.
  • the status information does not include information related to the state of the reaction in the reaction chamber 10, but only information related to the state of separation in the separation unit 2 (separation information). If the processing unit 1 does not have a reaction chamber 10, the status information may be separation information. In other words, the separation information includes at least one of product information and residue information.
  • control unit C may control the state of separation in the separation unit 2 so that at least one of the concentration and composition of the product gas is constant. For example, if the concentration of a predetermined component in the product gas or the composition of the product gas differs from a target value, at least one of the supply rate of the raw material gas supplied from the supply source S, the supply pressure of the raw material gas, and the supply ratio of the raw material gas components may be changed depending on the degree of the difference, thereby changing the supply rate of the raw material gas supplied to the separation unit 2, the supply pressure of the raw material gas, and the supply ratio of the raw material gas components, and performing control to adjust the state of separation in the separation unit 2 (e.g., gas separation performance such as the permeability coefficient) so that the concentration of the predetermined component in the product gas and the composition of the product gas approach the target value.
  • the state of separation in the separation unit 2 e.g., gas separation performance such as the permeability coefficient
  • the separation unit 2 has been described as having a first separator 21 and a second separator 22. However, depending on the composition and required specifications of the feed gas and product gas, the separation unit 2 may have only the first separator 21, or in addition to the first separator 21 and the second separator 22, the separation unit 2 may have one or more additional separators having separation membranes appropriate for the components of the gas to be separated.
  • the recovery unit 4 has been described as having a first recovery unit 4A and a second recovery unit 4B. However, depending on the composition and required specifications of the raw material gas and product gas, the recovery unit 4 may have only the first recovery unit 4A, or the recovery unit 4 may have one or more additional recovery units in addition to the first recovery unit 4A and the second recovery unit 4B.
  • the processing unit 1 has been described as having a reaction chamber 10 and a separation unit 2.
  • the precursor gas produced in the reaction chamber 10 is supplied from the reaction chamber 10 to the separation unit 2 via a pipe 72 connecting the reaction chamber 10 and the separation unit 2.
  • the processing unit 1 is not limited to having a reaction chamber 10 and a separation unit 2, and may include other devices and mechanisms.
  • the processing unit 1 may have a storage unit 12, such as a storage container, that stores the precursor gas.
  • FIG. 6 shows a case in which the storage unit 12 is connected to the reaction chamber 10 and the separation unit 2 via a pipe 72a that is connected to a pipe 72. A portion of the precursor gas produced in the reaction chamber 10 may be stored in the storage unit 12. Furthermore, the precursor gas may be supplied from the storage unit 12 to the separation unit 2.
  • precursor gas supplied from reaction chamber 10 to separation unit 2 increases or decreases, excess precursor gas can be temporarily stored in storage unit 12, and if there is a shortage of precursor gas, precursor gas can be supplied from storage unit 12 to separation unit 2 to make up for this.
  • This allows separation unit 2 to separate product gas from the precursor gas stored in storage unit 12. Therefore, it may be possible to ensure a stable supply of product gas when generating the product gas at the site where it is used.
  • the processing unit 1 has been described as having a reaction chamber 10 and a separation unit 2.
  • the separation unit 2 is not essential to the processing unit 1, and the processing unit 1 may not have the separation unit 2.
  • the processing unit 1 does not have a separation unit 2
  • the precursor gas described in the above embodiment becomes the product gas. If the processing unit 1 does not have a separation unit 2, the gas supply device 100 does not need to have a recovery unit 4.
  • This disclosure is applicable to gas supply devices, gas supply systems, and gas supply methods.
  • Processing unit 10 Reaction chamber 100: Gas supply device 12: Storage unit 18: Set value input unit 19: Notification unit 2: Separation unit 200: Gas supply system 21: First separator 22: Second separator 211: Membrane unit 219: Container 221: Membrane unit 229: Container 29: Piping 3: Monitoring unit 30: Product monitoring unit 31: Residue monitoring unit 32: Residue monitoring unit 4: Recovery unit 41: First separation and recovery machine (recovery unit) 410: Membrane section 411: Inlet pipe 412: Outlet pipe 413: Exhaust pipe 419: Container 41a: Valve device 41b: Valve device 42: Second separation and recovery machine (recovery unit) 420: Membrane section 421: Inlet pipe 422: Outlet pipe 42a: Valve device 42b: Valve device 423: Exhaust pipe 43: Third separation and recovery machine (recovery unit) 430: Membrane section 431: Inlet pipe 432: Outlet pipe 433: Exhaust pipe 43a: Valve device 43b

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Abstract

L'invention concerne un dispositif d'alimentation en gaz, un système d'alimentation en gaz et un procédé d'alimentation en gaz qui permettent de générer et de fournir de manière stable un gaz industriel là où le gaz industriel doit être utilisé. Un dispositif d'alimentation en gaz selon la présente invention comprend une unité de traitement qui produit un gaz produit à partir d'un gaz de départ qui comprend un composant de gaz de départ, une tuyauterie qui fournit le gaz brut à l'unité de traitement, ainsi qu'une tuyauterie qui distribue le gaz produit à partir de l'unité de traitement.
PCT/JP2025/015963 2024-05-21 2025-04-24 Dispositif d'alimentation en gaz, système d'alimentation en gaz et procédé d'alimentation en gaz Pending WO2025243782A1 (fr)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000009037A (ja) * 1998-06-18 2000-01-11 Fujitsu Ltd 排気装置及び排気方法
JP2000068212A (ja) * 1998-08-21 2000-03-03 Ebara Corp ガス循環機構を有する半導体製造方法及び装置
JP2010087079A (ja) * 2008-09-30 2010-04-15 Sekisui Chem Co Ltd 表面処理装置
WO2012014497A1 (fr) * 2010-07-30 2012-02-02 Ｊｘ日鉱日石エネルギー株式会社 Système de traitement de gaz d'échappement
JP2020537036A (ja) * 2017-10-12 2020-12-17 ジェレスト テクノロジーズ， インコーポレイテッド 薄膜製造のための化学物質源の統合された合成、送達及び加工のための方法及びシステム

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000009037A (ja) * 1998-06-18 2000-01-11 Fujitsu Ltd 排気装置及び排気方法
JP2000068212A (ja) * 1998-08-21 2000-03-03 Ebara Corp ガス循環機構を有する半導体製造方法及び装置
JP2010087079A (ja) * 2008-09-30 2010-04-15 Sekisui Chem Co Ltd 表面処理装置
WO2012014497A1 (fr) * 2010-07-30 2012-02-02 Ｊｘ日鉱日石エネルギー株式会社 Système de traitement de gaz d'échappement
JP2020537036A (ja) * 2017-10-12 2020-12-17 ジェレスト テクノロジーズ， インコーポレイテッド 薄膜製造のための化学物質源の統合された合成、送達及び加工のための方法及びシステム

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