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WO2025137161A1 - Matériaux de diamant avec défauts de passivation à l'hydrogène réduits et procédés de fabrication associés - Google Patents

Matériaux de diamant avec défauts de passivation à l'hydrogène réduits et procédés de fabrication associés Download PDF

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Publication number
WO2025137161A1
WO2025137161A1 PCT/US2024/060850 US2024060850W WO2025137161A1 WO 2025137161 A1 WO2025137161 A1 WO 2025137161A1 US 2024060850 W US2024060850 W US 2024060850W WO 2025137161 A1 WO2025137161 A1 WO 2025137161A1
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Prior art keywords
diamond layer
centers
diamond
initial
growing
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David Awschalom
Jonathan MARCKS
Joseph Heremans
Nazar DELEGAN
Alex Martinson
Jessica Jones
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University of Chicago
UChicago Argonne LLC
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University of Chicago
UChicago Argonne LLC
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C01B32/26—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C01B32/28—After-treatment, e.g. purification, irradiation, separation or recovery
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/006—Processes utilising sub-atmospheric pressure; Apparatus therefor

Definitions

  • Both single nitrogen-vacancy (NV) centers, used for high-spatial resolution quantum sensing and quantum communication, and ensembles of NV centers, used for high- sensitivity sensing (e.g., magnetometry), may be synthesized with controlled densities and spatial localization via plasma-enhanced chemical vapor deposition (PECVD).
  • PECVD diamond growth occurs in a plasma environment that is mostly hydrogen. Hydrogen ions from plasmas interstitially diffuse into diamond, which may, in turn, passivate NV centers by converting them into nitrogen-vacancy-hydrogen (NVH) centers that are difficult to dissociate.
  • the present embodiments include methods for fabricating diamond samples that include NV centers.
  • the present method embodiments include a degassing step that occurs after PECVD diamond growth has completed. This degassing step purges the diamond of interstitial hydrogen that becomes trapped in the diamond during CVD.
  • the present embodiments also include diamond materials fabricated with the present method embodiments.
  • PECVD diamond is grown in a majority-hydrogen plasma atmosphere, PATENT Attorney Docket No. UOCH.P2027WO/00627131 suggesting that during crystal growth, hydrogen diffuses into the crystal [1].
  • Hydrogen specifically the hydrogen ion H + , is mobile in diamond [2, 3], with an estimated diffusion constant of 6 ⁇ 10 5 nm 2 /s at 775°C [1], although this number varies in the literature [2, 3].
  • Hydrogen can form defect complexes with vacancies and NV centers [4, 5] during NV- activation annealing, precluding NV-center formation via one of two interfering processes: (i) capturing vacancies and converting them to unwanted VHx centers [4] and (ii) passivating NV centers to form unwanted NVHx centers, which are optically dark spin defects that are stable up to 1800°C [6] and thus cannot be removed using conventional annealing. Both of these two processes are of concern with regards to NV-center conversion efficiency [1, 7] as the crystal contains substitutional nitrogen (Ns) vacancies and hydrogen after growth and before annealing.
  • Ns substitutional nitrogen
  • the present embodiments use high-temperature baking to degas the diamond of interstitial hydrogen, thereby minimizing the formation of unwanted NVHx centers during subsequent high-temperature annealing.
  • this degassing step may be performed after the doping and before vacancy creation.
  • the degassing step may be performed after PECVD (i.e., after growth of the undoped diamond) and before implantation. While VH x complexes can form, NH x complexes do not appear in the literature [5] beyond theoretical investigations [8]. Therefore, it should be possible to substantially reduce the amount of interstitial hydrogen in the diamond before introducing vacancies.
  • FIG. 1 is a flowchart of a method for fabricating a diamond layer with NV centers and reduced hydrogen-passivated defects, in embodiments. [0010] FIG.
  • FIG. 2 is a flowchart of a method for fabricating a diamond layer with NV centers and reduced hydrogen-passivated defects, in embodiments.
  • FIG. 3 is a flowchart of a method for fabricating a diamond layer with NV centers and reduced hydrogen-passivated defects, in embodiments.
  • FIG. 4 is a plot of pressure versus time that shows the partial pressures of PATENT Attorney Docket No. UOCH.P2027WO/00627131 different gasses while the diamond sample was heated to a temperature of 850°C.
  • FIGS. 5A and 5B are photoluminescence maps that show NV centers in a first diamond sample (FIG.5A) and a second diamond sample (FIG.
  • FIG. 1 is a flowchart of a method 100 for fabricating a diamond layer with NV centers and reduced hydrogen-passivated defects, in accordance with some of the present embodiments.
  • step 102 of the method 100 an initial diamond layer is grown by performing chemical vapor deposition with at least methane gas (CH 4 ) and hydrogen gas (H 2 ).
  • CH 4 methane gas
  • H 2 hydrogen gas
  • the output of step 102 is the initial diamond layer.
  • the initial diamond layer is grown using PECVD during step 102.
  • the methane gas may contain carbon with natural isotopic abundance or isotopically pure carbon.
  • the initial diamond layer may be single-crystal or polycrystalline.
  • the initial diamond layer is grown on a substrate, such as a diamond substrate or a substrate composed of another material.
  • the initial diamond layer is heated to degas hydrogen.
  • the output of step 104 is a degassed diamond layer.
  • Step 104 occurs before the initial diamond layer is processed to create vacancies therein (e.g., see step 206 in FIG.2 or step 306 in FIG.3).
  • Step 104 occurs while the initial diamond layer is located in a high-vacuum environment. For example, step 104 may occur within a vacuum chamber.
  • degassed hydrogen is removed from the vacuum chamber (e.g., with an active pump, passive non-evaporable getters, or both) concurrently with the heating, thereby maintaining the high-vacuum environment while hydrogen degassing continues.
  • the initial diamond layer is heated to a maximum temperature (e.g., in the range of 500–600°C).
  • the initial diamond layer may be kept at the maximum temperature for a fixed duration (e.g., three hours or more).
  • the initial diamond layer may be heated for a duration that depends on the background hydrogen partial pressure (e.g., as measured with a residual gas analyzer or mass-spectrometer-based vacuum quality monitor system).
  • step 106 of the method 100 the degassed diamond layer is processed to create vacancies therein.
  • the output of step 106 is a vacancy-containing diamond layer.
  • step 108 of the method 100 the vacancy-containing diamond layer is annealed (e.g., PATENT Attorney Docket No. UOCH.P2027WO/00627131 by heating under vacuum) to create NV centers therein.
  • the output of step 108 is a diamond layer with NV centers.
  • Step 108 may be performing using annealing techniques known in the art.
  • the method 100 includes an additional step (not shown in FIG.1) of growing a cap layer over the diamond layer with NV centers.
  • This cap layer may be, for example, a layer of undoped diamond without NV centers.
  • FIG. 2 is a flowchart of a method 200 for fabricating a diamond layer with NV centers and reduced hydrogen-passivated defects, in accordance with some of the present embodiments.
  • the method 200 is an embodiment of the method 100 of FIG. 1.
  • step 202 of the method 200 a nitrogen-doped diamond layer is grown by performing chemical vapor deposition with at least nitrogen gas, methane gas, and hydrogen gas.
  • Step 202 is one example of step 102 of the method 100.
  • the output of step 202 is the nitrogen-doped diamond layer, which is an example of the initial diamond layer of FIG.1.
  • the nitrogen-doped diamond layer is heated to degas hydrogen.
  • Step 204 is one example of step 104 of the method 100.
  • the degassed diamond layer is irradiated with electrons to form vacancies in the degassed diamond layer.
  • Step 206 is one example of step 106 of the method 100. Step 206 may be performed using irradiation techniques known in the art.
  • FIG. 3 is a flowchart of a method 300 for fabricating a diamond layer with NV centers and reduced hydrogen-passivated defects, in accordance with some of the present embodiments.
  • the method 300 is an embodiment of the method 100 of FIG. 1.
  • an undoped diamond layer is grown by performing chemical vapor deposition using only methane and hydrogen gases (i.e., without nitrogen gas).
  • Step 302 is one example of step 102 of the method 100.
  • the output of step 302 is the undoped diamond layer, which is an example of the initial diamond layer of FIG.1.
  • the undoped diamond layer is heated to degas hydrogen.
  • Step 304 is one example of step 104 of the method 100.
  • the degassed diamond layer is bombarded with nitrogen ions to form both nitrogen defects and vacancies in the degassed diamond layer.
  • Step 306 is one example of step 106 of the method 100.
  • the method 100 then continues with step 108 (annealing) to create NV centers in the vacancy-containing diamond layer.
  • FIG.4 is a plot of pressure (in torr) versus time (in minutes) that shows the partial pressures of different gasses in the vacuum chamber while the diamond sample was heated to a temperature of 850°C.
  • FIG. 1 demonstrates that hydrogen gas is, in fact, degassed from the diamond sample as it is heated.
  • the partial pressure of hydrogen (H2) gas is shown as a dotted line while the sum of the partial pressures of oxygen (O2), nitrogen (N2), water vapor (H2O), and carbon dioxide (CO2) gasses are shown as a solid line.
  • Five temperatures are indicated by black arrows in FIG. 4.
  • the partial pressure of H2 significantly increases when the sample temperature is raised to 500°C, as this mobilizes the hydrogen [2], causing it to degas into the chamber. At the same time, there is no significant change in the other partial pressures.
  • the partial pressure of H2 remains elevated for about three hours. These temperatures are exceeded during growth (e.g., step 102 of the method 100 of FIG.
  • a lower bound on the density of hydrogen present in the diamond sample may be calculated from the peak partial pressure. At 166.19 minutes, the peak partial pressure of 1.37 torr corresponds to 3.89 ⁇ 10 11 mol at 515°C. Assuming that hydrogen has diffused uniformly throughout the diamond sample, the estimated lower-bound density of hydrogen is 49.3 ppb in the diamond sample (post-growth). Relativistic electron irradiation produces a vacancy density in the diamond sample of 1.1 ⁇ 10 ppb. At a typical dose of approximately 1 ⁇ 1014 cm 2, the vacancy density is exceeded by the estimated lower-bound hydrogen density.
  • Typical in-situ nitrogen doping (e.g., delta-doping) generates nitrogen-doped layers in diamond with thicknesses in the range of 2–500 nm and nitrogen densities up to tens of ppm. These thicknesses are relatively thin compared to the substrate, whose thickness may be up to several hundred microns, or more. Thus, the overall nitrogen density in the diamond sample is also exceeded by the hydrogen density. This indicates that the second hydrogen- PATENT Attorney Docket No.
  • FIGS. 5A and 5B are photoluminescence maps that show NV centers in a first diamond sample (FIG.5A) and a second diamond sample (FIG. 5B) that were grown under identical conditions, except that the second diamond sample was degassed of hydrogen. Both samples used a nominally 62-nm-thick, isotopically purified PECVD overgrowth layer with an in-situ nitrogen-doped layer located 10–12 nm below the surface of the PECVD overgrowth layer.
  • the degassing step described above (i.e., the step 104 of the method 100 of FIG.1) was performed on the second sample only. Both samples were irradiated with a 2 ⁇ 1014-cm 2 dose of 2-MeV electrons, annealed for two hours at 850°C with a 10°C/min ramp rate, and tri-acid cleaned. The samples were then imaged in a confocal microscope with a 532-nm laser beam while monitoring fluorescence in the NV center emission band. [0026]
  • the photoluminescence maps of FIGS. 5A and 5B display two main features. The first feature is the appearance of several donut-shaped spots, which arise from out-of-focus NV centers in the growth substrate.
  • the second feature is the appearance of in-focus, circular, or ovular bright spots, which are NV centers that lie within the laser beam’s depth-of-field.
  • This depth-of-field is larger than the thickness of the doped nitrogen layer and therefore these spots may be either 10-nm-deep NV centers arising from the in-situ nitrogen doping or substrate NV centers that happen to fall within the depth of field.
  • the in-situ doped nitrogen is less abundant ( 15 N, natural abundance 0.4%), with a nuclear spin of 1/2, while substrate nitrogen is more abundant ( 14 N, natural abundance 99.6%), with a nuclear spin of 1.
  • the difference in nuclear spin leads to a different hyperfine spectrum.
  • one near-surface NV center (i.e., an NV center within the in-situ doped layer) was identified in the first sample (FIG. 5A), as compared to six near-surface NV centers in the second sample (FIG.5B). These near-surface NV centers are identified in FIGS.5A and 5B with white circles.
  • the hydrogen degassing step of the present embodiments increased the yield of NV-center formation in the in-situ doped layer by approximately a factor of six.
  • PATENT Attorney Docket No. UOCH.P2027WO/00627131 [0028] The higher yield of NV-center formation in the second diamond sample (FIG.
  • FIGS. 5A and 5B As compared to the first sample (FIG.5A), is attributed to the reduction of hydrogen, which in turn prevents passivation that converts some NV centers into NVH x centers.
  • FIGS. 5A and 5B it is inferred from FIGS. 5A and 5B that the six-fold increase in near-surface NV centers in the second sample comes with a corresponding reduction in the number of NVH x centers. From this, it is estimated that the first sample has, on average, 5 NVHx centers within the 30 m ⁇ 30 m area shown. Assuming that the nitrogen-doped layer has a thickness of 2 nm, the corresponding volume of the nitrogen-doped layer shown in each of FIGS. 5A and 5B is approximately 1.8 m 3 .
  • the corresponding NVHx-center volume-number density in FIG. 5A is estimated to be 2.8 m -3 .
  • the NV-center volume-number density in FIG.5A is approximately 0.6 m -3 .
  • the present embodiments include diamond-based compositions of matter that feature various combinations of (i) a lower bound on the volume number density of NV centers and (ii) an upper bound on the volume number density of NVH x centers. Any of these compositions of matter may be fabricated using the methods disclosed herein (e.g., the method 100 of FIG. 1). Those skilled in the art will recognize how various steps of the fabrication process may be adjusted or modified to achieve a target or specified NV-center density.
  • the present embodiments break this tradeoff by identifying how to increase the NV-center density with minimal, if any, increase in NVHx-center density.
  • the present compositions of matter include diamond materials that access these previously unattainable combinations of NV-center density and NVHx-center density.
  • the lower bound on the volume number density of NV centers is 1.0 m -3 . In some embodiments, the lower bound on the volume number density of NV centers is 5.0 m -3 . In some embodiments, the lower bound on the volume number density of NV centers is 10.0 m -3 . In some embodiments, the lower bound on the volume number density of NV centers is 50.0 m -3 . In some embodiments, the lower bound on the volume number density of NV centers is 100 m -3 . However, the lower bound on the volume number density of NV centers may have another value (e.g., less than 0.1 m -3 or greater than 100 m -3 ) without departing from the scope hereof.
  • the upper bound on the volume number density of NVH x PATENT Attorney Docket No. UOCH.P2027WO/00627131 centers is 0.1 m -3 . In some embodiments, the upper bound on the volume number density of NVH x centers is 0.5 m -3 . In some embodiments, the upper bound on the volume number density of NVH x centers is 1.0 m -3 . In some embodiments, the upper bound on the volume number density of NVH x centers is 5.0 m -3 . In some embodiments, the upper bound on the volume number density of NVH x centers is 10.0 m -3 .
  • a composition of matter includes diamond having (i) a volume number density of NV centers greater than 0.6 m -3 and (ii) a volume number density of NVHx centers less than 2.8 m -3 .
  • the lower bound on the volume number density of NV centers is 0.6 m -3 and the upper bound on the volume number density of NVH x centers if 2.8 m -3 .
  • the composition of matter alternatively has one or both of (i) a different value for the lower bound on the volume number density of NV centers and (ii) a different value for the upper bound on the volume number density of NVH x centers.
  • any of the above-discussed lower bounds on the volume number density of NV centers may be combined with any of the above-discussed upper bounds on the volume number density of NVH x centers.
  • a composition of matter includes diamond having both a volume number density of NV centers and a volume number density of NVHx centers, where the volume number density of NV centers exceeds the volume number density of NVHx centers.
  • the volume number density of NV centers exceeds the volume number density of NVHx centers by a multiplicative factor of two or more.
  • the volume number density of NV centers exceeds the volume number density of NVHx centers by a multiplicative factor of three or more.
  • the volume number density of NV centers exceeds the volume number density of NVHx centers by a multiplicative factor of five or more.
  • the volume number density of NV centers exceeds the volume number density of NVH x centers by a multiplicative factor of ten or more.
  • the nitrogen-doped layer i.e., the diamond layer with NV centers in FIGS. 1, 2, and 3
  • the lower bound on the volume number density of NV centers and the upper bound on the volume number density of NVH x centers may be alternatively expressed as surface-area densities that ignore the thickness of the PATENT Attorney Docket No. UOCH.P2027WO/00627131 nitrogen-doped layer.
  • the present embodiments also include diamond-based compositions of matter that feature various combinations of both (i) a lower bound on the area number density of NV centers and (ii) an upper bound on the area number density of NVH x centers.
  • the lower bound on the area number density of NV centers is 10 -4 m -2 .
  • the lower bound on the area number density of NV centers is 5 ⁇ 10 -4 m -2 .
  • the lower bound on the area number density of NV centers is 10 -3 m -2 .
  • the lower bound on the area number density of NV centers is 5 ⁇ 10 -3 m -2 .
  • the lower bound on the area number density of NV centers is 10 -2 m -2 . In some embodiments, the lower bound on the area number density of NV centers is 5 ⁇ 10 -2 m -2 . In some embodiments, the lower bound on the area number density of NV centers is 10 -1 m -2 . However, the lower bound on the area number density of NV centers may have another value (e.g., less than 10 -4 m -2 or greater than 10 -1 m -2 ) without departing from the scope hereof. [0036] In some embodiments, the upper bound on the area number density of NVH x centers is 10 -5 m -2 .
  • composition of matter may alternatively have one or both of (i) a different value for the lower bound on the area number density of NV centers and (ii) a different value for the upper bound on the area number density of NVH x centers.
  • a composition of matter includes diamond having both PATENT Attorney Docket No.
  • growing the initial diamond layer includes growing an undoped diamond layer.
  • heating the initial diamond layer includes heating the initial diamond layer to a maximum temperature between 500°C and 600°C.
  • heating the initial diamond layer includes holding the initial diamond layer at the maximum temperature for at least three hours.
  • growing the initial diamond layer includes performing plasma-enhanced chemical vapor deposition.
  • growing the initial diamond layer includes performing chemical vapor deposition with carbon-isotopically pure methane gas.
  • the initial diamond layer is single-crystal diamond.
  • the initial diamond layer is polycrystalline diamond.
  • growing the initial diamond layer includes growing the initial diamond layer on a substrate.
  • the substrate is composed of diamond.
  • (A15) In any of the methods denoted (A1) to (A14), heating the initial diamond layer occurs prior to any irradiation or ion bombardment of the initial diamond layer. [0056] (A16) In any of the methods denoted (A1) to (A15), heating the initial diamond layer occurs while the initial diamond layer is under high vacuum. [0057] (A17) In any of the methods denoted (A1) to (A16), the method further includes growing a cap layer over the vacancy-containing diamond layer. [0058] (A18) In the method denoted (A17), the cap layer is composed of undoped PATENT Attorney Docket No. UOCH.P2027WO/00627131 diamond.
  • (B1) A composition of matter includes diamond fabricated with any of the methods denoted (A1) to (A18).
  • Changes may be made in the above methods and systems without departing from the scope hereof. It should thus be noted that the matter contained in the above description or shown in the accompanying drawings should be interpreted as illustrative and not in a limiting sense. The following claims are intended to cover all generic and specific features described herein, as well as all statements of the scope of the present method and system, which, as a matter of language, might be said to fall therebetween.

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Abstract

Un procédé comprend la croissance d'une couche de diamant initiale par réalisation d'un dépôt chimique en phase vapeur avec au moins du méthane gazeux et de l'hydrogène gazeux. Le procédé consiste également à chauffer la couche de diamant initiale pour dégazer l'hydrogène de la couche de diamant initiale, créant ainsi une couche de diamant dégazée. Le procédé consiste également à traiter la couche de diamant dégazée pour créer des lacunes à l'intérieur de celle-ci, créant ainsi une couche de diamant contenant une lacune. Le procédé comprend également le recuit de la couche de diamant contenant des lacunes pour créer des centres azote-lacune à l'intérieur de celle-ci. La couche de diamant obtenue, avec des centres azote-lacune à l'intérieur de celle-ci, contient moins de défauts passivés par l'hydrogène, tels que centres NVHx, que les couches de diamant fabriquées sans l'étape de dégazage d'hydrogène.
PCT/US2024/060850 2023-12-19 2024-12-18 Matériaux de diamant avec défauts de passivation à l'hydrogène réduits et procédés de fabrication associés Pending WO2025137161A1 (fr)

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US20210148005A1 (en) * 2019-11-18 2021-05-20 Shin-Etsu Chemical Co., Ltd. Diamond substrate and method for manufacturing the same
US20220325406A1 (en) * 2019-09-03 2022-10-13 The University Of Bristol Chemical vapor deposition process for producing diamond
WO2023067029A1 (fr) * 2021-10-19 2023-04-27 Element Six Technologies Limited Diamant monocristallin cvd

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Publication number Priority date Publication date Assignee Title
US5994208A (en) * 1995-06-23 1999-11-30 Prins; Johan Frans Doping in crystalline diamond substrates
US20100002824A1 (en) * 2008-07-02 2010-01-07 Willard Henry Schmidt Neutron bundles for energy and element production
US20130092868A1 (en) * 2010-06-29 2013-04-18 Showa Denko K.K. R-t-b-based rare earth permanent magnet, motor, automobile, power generator, and wind power-generating apparatus
US20220325406A1 (en) * 2019-09-03 2022-10-13 The University Of Bristol Chemical vapor deposition process for producing diamond
US20210148005A1 (en) * 2019-11-18 2021-05-20 Shin-Etsu Chemical Co., Ltd. Diamond substrate and method for manufacturing the same
WO2023067029A1 (fr) * 2021-10-19 2023-04-27 Element Six Technologies Limited Diamant monocristallin cvd

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