WO2025127757A1 - Method for manufacturing nano-mesh membrane using ion beam irradiation process, nano-mesh membrane manufactured thereby, mask for lithography using same, optical filter for lithography process using same, patterning device including same, and optical device including same - Google Patents

Abstract

Provided is a method for manufacturing a nano-mesh membrane having a plurality of pores formed spaced apart from each other. The method for manufacturing a nano-mesh membrane may comprise: a step for preparing a base membrane; a step for forming a functional film on the base membrane; and a step for irradiating the base membrane, on which the functional film is formed, with ion beams so that the ion beams pass through the functional film and the base membrane, and thereby manufacturing the nano-mesh membrane having a plurality of the pores that are formed during the course of the ion beams passing through the functional film and the base membrane.

Description

Method for manufacturing a nano mesh membrane using an ion beam irradiation process, a nano mesh membrane manufactured thereby, a mask for lithography using the same, an optical filter for a lithography process using the same, a patterning device including the same, and an optical device including the same

The present application relates to a method for manufacturing a membrane having a nano-mesh structure, and a nano-mesh membrane manufactured thereby, and more specifically, to a method for manufacturing a nano-mesh membrane using an ion beam irradiation process, a nano-mesh membrane manufactured thereby, a lithography mask using the same, an optical filter for a lithography process using the same, a patterning device including the same, and an optical device including the same.

As the circuit line width of semiconductor devices is rapidly miniaturized, there is a limit to forming fine patterns with the immersion ArF exposure equipment using the light source of the 193 nm wavelength currently in use. In order to form fine patterns without improving the light source and exposure equipment, technologies such as double exposure or quadruple exposure are being applied, but this causes problems such as an increase in the number of processes, an increase in process prices, and a decrease in the number of processing units per hour in semiconductor device manufacturing where mass production is important.

To solve these problems, next-generation exposure equipment using extreme ultraviolet lithography technology that uses extreme ultraviolet light with a wavelength of 13.5 nm as a light source is being developed. Since the light with a wavelength of 13.5 nm used in extreme ultraviolet lithography technology is absorbed by almost all substances, a reflective mask such as a mirror is used instead of a conventional transmissive mask. If impurities such as dust or foreign substances adhere to this mask, the light is absorbed or reflected by the impurities, damaging the transferred pattern and causing a problem of reduced performance or yield of semiconductor devices or liquid crystal displays.

Meanwhile, the mask for semiconductor lithography is an essential element for semiconductor performance, production efficiency, and technological advancement, and is a key component that greatly affects the success or failure of semiconductor manufacturing. As the size of semiconductor circuits becomes smaller at the nanometer level, very precise patterns must be formed, and only when the mask is accurate can the patterns of transistors and circuits inside the chip be precisely implemented, and since one mask can repeatedly print patterns on multiple wafers, numerous chips with the same pattern can be mass-produced. Therefore, the higher the quality of the mask, the lower the defect rate and the higher the production efficiency.

Regarding a nano mesh membrane that can be utilized as a mask and filter for semiconductor lithography, Korean Patent Publication No. 10-2020-0022677 discloses a step of manufacturing an insulator by imprinting having a pattern portion opposite to a mold, a step of surface-modifying an insulating film on which a pattern is formed into a hydrophilic film through plasma treatment, a conductive paste application step of applying conductive paste to a pattern portion formed on the insulator, and a step of filling conductive paste between patterns; A method for manufacturing a nano metal mesh through surface treatment in a roll-to-roll imprint process, characterized by including a residual paste removing step for removing the remaining residual paste, is disclosed. According to the method, when manufacturing a metal mesh through the roll-to-roll nano imprint process, a film on which a pattern is formed is surface-modified into hydrophilicity through plasma treatment, thereby improving the adhesiveness of a conductive paste. In addition, a film on which a pattern is formed is surface-modified into hydrophilicity through plasma treatment, thereby improving the adhesiveness of the conductive paste with conductive particles (silver, copper, aluminum, etc.) and a binder (resin, solvent) of the conductive paste, thereby improving the filling rate of the conductive paste in the electrode forming process in a nanometer-scale pattern during the electrode forming process.

The technical problem that the present application seeks to solve is to provide a method for manufacturing a nano-mesh membrane using an ion beam irradiation process with a simplified manufacturing process, a nano-mesh membrane manufactured thereby, a lithography mask using the same, an optical filter for a lithography process using the same, a patterning device including the same, and an optical device including the same.

Another technical problem to be solved by the present application is to provide a method for manufacturing a nano-mesh membrane using an ion beam irradiation process that is easy to mass-produce, a nano-mesh membrane manufactured thereby, a lithography mask using the same, an optical filter for a lithography process using the same, a patterning device including the same, and an optical device including the same.

Another technical problem to be solved by the present application is to provide a method for manufacturing a nano-mesh membrane using an ion beam irradiation process with improved manufacturing yield, a nano-mesh membrane manufactured thereby, a lithography mask using the same, an optical filter for a lithography process using the same, a patterning device including the same, and an optical device including the same.

Another technical problem that the present application seeks to solve is to provide a method for manufacturing a nano-mesh membrane using an ion beam irradiation process having a free-standing structure, a nano-mesh membrane manufactured thereby, a lithography mask using the same, an optical filter for a lithography process using the same, a patterning device including the same, and an optical device including the same.

The technical problems to be solved by the present invention are not limited to those described above.

In order to solve the above technical problems, the present invention provides a method for manufacturing a nano mesh membrane.

According to one embodiment, a method for manufacturing a nano-mesh membrane having a plurality of pores formed spaced apart from each other may include a step of preparing a base membrane, a step of forming a functional film on the base membrane, and a step of irradiating the base membrane with the functional film formed thereon with an ion beam, such that the ion beam penetrates the functional film and the base membrane, and a step of manufacturing the nano-mesh membrane having a plurality of pores generated in the process of the ion beam penetrating the functional film and the base membrane.

In one embodiment, the ion beam may include irradiating the functional film of the base membrane.

According to one embodiment, the functional film may include one having higher electrical conductivity than the base membrane.

According to one embodiment, the functional film may have a thickness thinner than the thickness of the base membrane.

According to one embodiment, the ion beam may include at least one of gallium ions, argon ions, neon ions, helium ions, or hydrogen ions.

To solve the above technical problems, the present application provides a nano mesh membrane.

According to one embodiment, the nano-mesh membrane may include a base membrane, and a functional film formed of a material having higher conductivity than the base membrane and disposed on the base membrane, wherein a plurality of pores spaced apart from each other are provided penetrating the base membrane and the functional film, and the functional film may be provided on an upper surface of the base membrane, but not provided on sidewalls of the plurality of pores.

According to one embodiment, a portion of the base membrane forming a side wall of the plurality of pores and a portion of the functional membrane forming a side wall of the plurality of pores may be coplanar with each other.

According to one embodiment, the functional membrane may have a thickness thinner than that of the base membrane.

According to one embodiment, the base membrane may include an insulating material.

To solve the above technical problems, the present application provides a method of utilizing a nano mesh membrane.

According to one embodiment, a method of manufacturing a nano-mesh membrane includes the steps of preparing the nano-mesh membrane according to the above-described embodiments, and the steps of irradiating light onto the nano-mesh membrane, wherein, in a wavelength band of the light irradiated onto the nano-mesh membrane, light of a target wavelength band may be transmitted through the nano-mesh membrane, and light of a wavelength band different from the target wavelength band may be blocked by the nano-mesh membrane.

To solve the above technical problems, the present application provides a patterning method.

According to one embodiment, the method may include the steps of preparing the nano-mesh membrane according to the embodiments described above, irradiating light onto the nano-mesh membrane, and causing a photosensitive membrane to react by the light transmitted through the nano-mesh membrane.

To solve the above technical problems, the present application provides an optical device.

According to one embodiment, the optical device may include a light source that generates light, the nano-mesh membrane according to any one of claims 6 to 9, onto which light generated from the light source is irradiated, and an optical system that guides the light transmitted through the nano-mesh membrane to a target.

To solve the above technical problems, the present application provides an EUV lithography apparatus.

According to one embodiment, the EUV lithography apparatus may include a light source that generates EUV light, and the nano-mesh membrane according to the above-described embodiments, onto which the EUV light generated from the light source is irradiated.

A method for manufacturing a nano mesh membrane may include a step of preparing a base membrane, a step of forming a functional film on the base membrane, and a step of irradiating an ion beam onto the base membrane on which the functional film is formed, such that the ion beam penetrates the functional film and the base membrane, and a step of manufacturing the nano mesh membrane having a plurality of pores generated in the process of the ion beam penetrating the functional film and the base membrane.

Accordingly, a nano-mesh membrane having a plurality of pores that are arranged regularly or irregularly and formed spaced apart from each other can be easily manufactured with a high yield through a simple process.

Depending on the sizes of the plurality of pores of the nano mesh membrane, the wavelength band of light transmitting through the nano mesh membrane and the wavelength band of light blocked can be controlled. Specifically, for example, light in a wavelength band smaller than the size of the pores can have high transmittance, and light in a wavelength band larger than the size of the pores can have low transmittance.

FIG. 1 is a flowchart for explaining a method for manufacturing a nano mesh membrane according to a first embodiment of the present application.

FIG. 2 is a drawing for explaining a base membrane in a method for manufacturing a nano mesh membrane according to the first embodiment of the present application.

FIG. 3 is a drawing for explaining a nano mesh membrane manufactured according to a method for manufacturing a nano mesh membrane according to the first embodiment of the present application.

FIG. 4 is a drawing for explaining a method for manufacturing a nano mesh membrane according to a first modified example of the first embodiment of the present application.

FIG. 5 is a drawing for explaining a method for manufacturing a nano mesh membrane according to a second modified example of the first embodiment of the present application.

FIG. 6 is a drawing for explaining a method for manufacturing a nano mesh membrane according to a third modified example of the first embodiment of the present application.

FIG. 7 is a flowchart for explaining a method for manufacturing a nano mesh membrane according to a second embodiment of the present application.

FIG. 8 is a drawing for explaining a base membrane in a method for manufacturing a nano mesh membrane according to a second embodiment of the present application.

FIG. 9 is a drawing for explaining the ion beam irradiation process in the method for manufacturing a nano mesh membrane according to the second embodiment of the present application.

FIG. 10 is a drawing for explaining a nano mesh membrane according to a first modified example of the second embodiment of the present application.

FIGS. 11 and 12 are drawings for explaining a nano mesh membrane according to a second modified example of the second embodiment of the present application.

FIG. 13 is a drawing for explaining the side walls of the pores of the nano mesh membrane according to the second modified example of the second embodiment of the present application.

FIG. 14 is a drawing for explaining a nano mesh membrane according to a third modified example of the second embodiment of the present application.

FIG. 15 is a drawing for explaining a nano mesh membrane according to a fourth modified example of the second embodiment of the present application.

Figures 16 to 18 are SEM photographs of nano mesh membranes according to experimental examples of the present application.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. However, the technical idea of the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided so that the disclosed content can be thorough and complete and so that the idea of the present invention can be sufficiently conveyed to those skilled in the art.

In this specification, when it is mentioned that a component is on another component, it means that it can be formed directly on the other component, or a third component can be interposed between them. Also, in the drawings, the thickness of films and regions is exaggerated for the effective explanation of the technical contents.

Additionally, although terms such as first, second, third, etc. have been used in various embodiments of the present specification to describe various components, these components should not be limited by such terms. Thus, what is referred to as a first component in one embodiment may be referred to as a second component in another embodiment.

Each embodiment described and illustrated herein also includes its complementary embodiment. Additionally, the term "and/or" is used herein to mean at least one of the elements listed before and after.

In the specification, singular expressions include plural expressions unless the context clearly indicates otherwise. Also, terms such as "comprises" or "has" are intended to specify the presence of a feature, number, step, component, or combination thereof described in the specification, but should not be construed as excluding the possibility of the presence or addition of one or more other features, numbers, steps, components, or combinations thereof.

In addition, when describing the present invention below, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the gist of the present invention, the detailed description will be omitted.

In the specification of the present application, penetration and blocking are not interpreted as being limited to 100% penetration and 100% blocking, but are interpreted as having a penetration rate and blocking rate within a range acceptable to those skilled in the art.

FIG. 1 is a flowchart for explaining a method for manufacturing a nano mesh membrane according to a first embodiment of the present application, FIG. 2 is a drawing for explaining a base membrane in a method for manufacturing a nano mesh membrane according to a first embodiment of the present application, and FIG. 3 is a drawing for explaining a nano mesh membrane manufactured according to a method for manufacturing a nano mesh membrane according to a first embodiment of the present application.

Referring to FIGS. 1 and 2, a base membrane (110) is prepared (S110). The base membrane (110) may have a plurality of first pores (114). The base membrane (110) may have a first network structure (112) defining a plurality of the first pores (114). In other words, the base membrane (110) may have the first network structure (112) of a lattice structure and may have a plurality of the first pores (114) defined by the first network structure (112).

The shape of the plurality of first pores (114) may be, in a planar view, a square as shown in FIG. 2, or, unlike as shown in FIG. 2, may be formed into a circle, triangle, polygon, etc.

According to one embodiment, the plurality of first pores (114) of the base membrane (110) may have the same shape and be arranged spaced apart from each other in a regular or irregular manner. Or, according to another embodiment, the plurality of first pores (114) of the base membrane (110) may have different shapes and be arranged spaced apart from each other in a regular or irregular manner.

The base membrane (110) may be formed of a material usable in ultra-high vacuum and high temperature. For example, the base membrane (110) may be a nickel mesh or a stainless steel mesh. Or, as another example, the base membrane (110) may be formed of an insulating material (e.g., silicon nitride).

Continuing with reference to FIGS. 1 and 3, by reducing the first size of the first pore (114) of the base membrane (110), a nano mesh membrane (120) having second pores (124) of a second size smaller than the first size of the first pore (114) can be manufactured (S120).

In other words, the nano mesh membrane (120) may have pores of a smaller size compared to the base membrane (110), and may have substantially the same number of pores as the base membrane (110).

The step of reducing the first size of the first pore (114) of the base membrane (110) may include forming a material film (121) on the side wall and upper surface of the first network structure (112) of the base membrane (110).

In other words, the material film (121) is formed on at least a side wall of the first network structure (112) of the base membrane (110), so that the first pore (114) of the first size can be changed into the second pore (124) of the second size. Accordingly, the thickness of the material film (121) can have a thickness smaller than half the size of the first pore (114) so as to fill a part of the first pore (114) rather than all of it.

The material film (121) may be formed using a vacuum process such as electron beam deposition, thermal deposition, or sputtering to ensure stability in ultra-high vacuum and high temperature. In other words, the material film (121) may be formed using a vacuum-based deposition process rather than deposition by a chemical method (e.g., solution process), and thus, the material film (121) may have high reliability in ultra-high vacuum and high temperature environments.

Alternatively, according to one embodiment, the material film (121) may be formed by a self-assembly process of coating self-assembling molecules on the base membrane (110) and performing a heat treatment.

As described above, according to the first embodiment of the present application, the material film (121) may be formed on at least a side wall of the first network structure (112) of the base membrane (110), so that the nano mesh membrane (120) may be formed, and the nano mesh membrane (120) may have a second network structure (122) defining the second pores (124).

In addition, the thickness of the material film (121) can be controlled by a method of controlling process variables in a vacuum deposition process, and the size of the second pores (124) of the nano mesh membrane (120) can be easily controlled by a method of controlling the thickness of the material film (121).

The material film (121) may be formed of a material that can easily conformally cover the base membrane (110) having the first pores (114). For example, the material film (121) may be formed using a vacuum deposition process with excellent coverage, such as an atomic layer deposition process.

According to one embodiment, the nano mesh membrane (120) can be used as a mask for a lithography process. Specifically, it can be used as a mask for a lithography process using EUV light, ArF light, electron beam, UV, DUV, X-ray, etc.

When the above nano mesh membrane (120) is used as a mask for an electron beam lithography process, the material film (121) can be formed of a conductive material. Accordingly, electrons can be prevented from accumulating in the nano mesh membrane (120) during the electron beam lithography process, and the lifespan of the nano mesh membrane (120) can be extended.

According to a first modified example of the first embodiment, in the first embodiment of the present application described above, an interfacial bonding layer (123) may be formed before forming the first material film (121) on the first network structure (122) of the base membrane (110). Hereinafter, with reference to FIG. 4, a first modified example of the first embodiment of the present application will be described.

FIG. 4 is a drawing for explaining a method for manufacturing a nano mesh membrane according to a first modified example of the first embodiment of the present application.

Referring to FIG. 4, in the method for manufacturing a nano mesh membrane (120) according to the first embodiment described with reference to FIGS. 1 to 3, before forming the first material film (121), an interfacial bonding layer (123) may be formed on the first network structure (122) of the base membrane (110), and the first material film (121) may be formed on the interfacial bonding layer (123).

Due to the interfacial bonding layer (123), the first material film (121) can be easily and conformally formed on the side wall of the first network structure (122) of the base membrane (110). For example, the interfacial bonding layer (123) can include silicon, zirconium, platinum, or the like.

According to one embodiment, the thickness of the interfacial bonding layer (123) may be thinner than the thickness of the material film (121). In addition, the sum of the thicknesses of the interfacial bonding layer (123) and the material film (121) may have a thickness smaller than half the size of the first pore (114) so as to fill only a part of, but not all, the first pore (114) of the base membrane (110).

According to a second modified example of the first embodiment, in the first embodiment of the present application described above, the base membrane (110) may be pretreated. Hereinafter, with reference to FIG. 5, a second modified example of the first embodiment of the present application will be described.

FIG. 5 is a drawing for explaining a method for manufacturing a nano mesh membrane according to a second modified example of the first embodiment of the present application.

Referring to FIG. 5, in the method for manufacturing a nano mesh membrane (120) according to the first embodiment described with reference to FIGS. 1 to 3, before forming the material film (121), the base membrane (110) may be pretreated (130). After the base membrane (110) is pretreated (130), the material film (121) may be formed by the method described with reference to FIGS. 1 to 3.

The pretreatment (130) of the base membrane (110) may include at least one of ozone treatment of the surface of the base membrane (110), irradiating the surface of the base membrane (110) with an ion beam (e.g., gallium ion, argon ion, neon ion, helium ion, hydrogen ion), heat treatment of the base membrane (110), or hydrogen treatment (hydrogen radical treatment, hydrogen plasma treatment) of the base membrane (110).

According to one embodiment, the base membrane (110) may be irradiated with an ion beam, and then the base membrane (110) may be heat-treated. As a result, the material film (121) may be easily formed on the side wall of the first network structure (112) of the base membrane (110), and accordingly, by forming the material film (121) on the base membrane (110), the nano-mesh membrane (120) having smaller pores than the base membrane (110) may be easily formed.

In addition, according to one embodiment, when irradiating the base membrane (110) with an ion beam, in order to prevent the ion beam from being concentratedly irradiated to only one area of the base membrane (110) due to the directionality of the ion beam, the ion beam may be irradiated while the base membrane (110) rotates about the normal direction of the upper surface of the base membrane (110) as the rotation axis. As a result, the plus deviation of the ion beam irradiated to each area of the base membrane (110) may be eliminated. In addition, according to one embodiment, the ion beam may be irradiated while rotating in a state where the irradiation direction of the ion beam and the normal direction of the upper surface of the base membrane (110) are arranged to intersect each other (or form an acute angle).

According to a third modified example of the first embodiment, in the first embodiment of the present application described above, the side wall of the first pore (114) of the base membrane (110) may be in a tilted state. Hereinafter, with reference to FIG. 6, a third modified example of the first embodiment of the present application will be described.

FIG. 6 is a drawing for explaining a method for manufacturing a nano mesh membrane according to a third modified example of the first embodiment of the present application.

Referring to FIG. 6, according to the method for manufacturing a nano mesh membrane (120) according to the first embodiment described with reference to FIGS. 1 to 3, the nano mesh membrane (120) is manufactured, but the sidewall of the first pore (114) defined by the first network structure (112) of the base membrane (110) (the sidewall of the first network structure (112)) may be in a tilted state.

More specifically, when the first material film (121) is formed on the first surface of the base membrane (110), the width of the first pore (114) in the region adjacent to the first surface may be wider than the width of the first pore (114) in the region adjacent to the second surface of the base membrane (120) facing the first surface. As a result, the material film (121) can be easily formed on the inclined sidewall of the first network structure (112).

On the other hand, unlike the third modified example of the first embodiment of the present invention described above, when the width of the first pore (114) is constant (in other words, when the side wall of the first network structure (112) defining the first pore (114) is not inclined), it may not be easy to form the material film (121) on the side wall of the first network structure (112), and thus, the nano mesh membrane (120) having smaller pores than the base membrane (110) may not be easily manufactured.

However, as described above, according to the third modified example of the first embodiment of the present application, the side wall of the first network structure (112) of the base membrane (110) can be provided in an inclined state, and thus, the material film (121) can be easily formed on the inclined side wall. In conclusion, the material film (121) is easily formed on the side wall of the first network structure (112), and thus, the nano mesh membrane (120) can be easily formed.

Meanwhile, according to one embodiment, by irradiating the first surface of the base membrane (110) with an ion beam, the side wall of the first network structure (112) may be formed in an inclined state. In other words, when the first surface of the base membrane (110) is irradiated with an ion beam focused on it, an area adjacent to the first surface of the base membrane (110) is etched due to the irradiation of the focused ion beam, so that, as described above, the width of the first pore (114) in the area adjacent to the first surface may become wider than the width of the first pore (114) in the area adjacent to the second surface.

Hereinafter, a method for manufacturing a nano mesh membrane according to a second embodiment of the present application is described.

FIG. 7 is a flowchart for explaining a method for manufacturing a nano mesh membrane according to a second embodiment of the present application, FIG. 8 is a drawing for explaining a base membrane in a method for manufacturing a nano mesh membrane according to a second embodiment of the present application, and FIG. 9 is a drawing for explaining an ion beam irradiation process in a method for manufacturing a nano mesh membrane according to a second embodiment of the present application.

Referring to FIGS. 7 and 8, a base membrane (210) is prepared (S210). The base membrane (210) may be a substrate or base material in a flat plate shape without pores, as shown in FIG. 8. However, it is not excluded that some pores exist inside the base membrane (210).

For example, the base membrane (210) may be formed of silicon nitride (ex. Si3N4).

Referring to FIG. 7 and FIG. 9, by irradiating the base membrane (210) with an ion beam (225), the ion beam (225) penetrates the base membrane (210), and in the process of the ion beam (225) penetrating the base membrane (210), a nano mesh membrane (220) having a plurality of pores (224) can be manufactured (S220).

The ion beam (225) may include, for example, gallium ions, ions of an inert gas (helium, argon, or neon), or hydrogen ions. If the intensity of the ion beam (225) is excessively strong, the base membrane (210) may be damaged, and if the intensity of the ion beam (225) is excessively weak, excessive time may be required to manufacture the nano mesh membrane (220), resulting in high costs. According to one embodiment, if the ion beam (225) is a gallium ion beam, the energy of the gallium ion beam may be 5 to 30 KV and the intensity may be 1 pA to 65 nA.

Additionally, according to one embodiment, the ion beam (225) may be a focused ion beam or a wide-area ion beam.

According to an embodiment of the present application, the nano mesh membrane (220) can be easily manufactured by a simple method of irradiating the base membrane (210) with the ion beam (225). In addition, the size and arrangement of the pores (224) of the nano mesh membrane (220) can be easily controlled by a simple method of controlling the type, intensity, and energy of the ion beam (225).

According to one embodiment, after the nano mesh membrane (220) is formed, a coating layer may be formed on the nano mesh membrane (220). For example, Au, Pt, etc. may be formed as the coating layer, and the coating layer may be formed using a vacuum deposition process such as electron beam deposition, thermal deposition, or sputtering. Accordingly, the nano mesh membrane (220) may be utilized as a filter that blocks X-rays, ultraviolet rays, visible light, infrared rays, etc., and transmits EUV light.

In addition, according to one embodiment, the nano mesh membrane (220) manufactured according to the second embodiment of the present application may be defined as the base membrane (110) according to the first embodiment of the present application described with reference to FIGS. 1 to 3. That is, the material film (121) is formed on the base membrane (110) having the first pores (114) generated by irradiating the ion beam (225), so that the nano mesh membrane (120) having the second pores (124) smaller than the first pores (114) may be formed. The nano mesh membrane (220) manufactured according to the modified examples of the second embodiment described below may also be defined as the base membrane (110) according to the first embodiment of the present application described with reference to FIGS. 1 to 3.

As described above, when the nano mesh membrane (220) is manufactured by irradiating the ion beam (225), doping ions may be provided within the network structure defining the pores (224) of the nano mesh membrane (220). The doping ions may be residual ions used in the irradiation of the ion beam (225). In other words, for example, the doping ions may include at least one of gallium ions, argon ions, neon ions, helium ions, or hydrogen ions.

When the ion beam (225) is irradiated to the first surface of the nano mesh membrane (220), according to one embodiment, the concentration of the doping ion in the first region adjacent to the first surface may be higher than the concentration of the doping ion in the second region adjacent to the second surface opposite to the first surface.

Depending on the presence and/or concentration profile of the doping ions, it can be traced back to the fact that the nano mesh membrane (220) was formed by irradiating the ion beam (225).

According to a first modified example of the second embodiment, in the second embodiment of the present application described above, the base membrane (220) may have a plurality of concave portions. Hereinafter, with reference to FIG. 10, a first modified example of the second embodiment of the present application will be described.

FIG. 10 is a drawing for explaining a nano mesh membrane according to a first modified example of the second embodiment of the present application.

Referring to FIG. 10, the base membrane (210) may include a plurality of concave portions spaced apart from each other. As described with reference to FIGS. 7 to 9, the ion beam (225) may be irradiated onto the base membrane (210) to manufacture the nano mesh membrane (220). In other words, the nano mesh membrane (220) having a plurality of pores (224) generated in the process of the ion beam (225) passing through the plurality of concave portions of the base membrane (210) and the ion beam (225) passing through the plurality of concave portions of the base membrane (210) may be manufactured.

For example, the base membrane (210) having a plurality of the above-described concave portions can be formed by an imprinting method. That is, when forming pores penetrating the inside by an imprinting method, the base membrane (210) can be damaged due to excessive pressure application. On the other hand, according to the first modified example of the second embodiment of the present application as described above, the base membrane (210) can have the above-described concave portions, and the ion beam (225) is irradiated onto the base membrane (210) having the above-described concave portions, so that the nano-mesh membrane (220) having the pores (224) penetrating the inside can be easily manufactured.

According to a second modified example of the second embodiment, in the second embodiment of the present application described above, a functional film (230) may be formed on the base membrane (220). Hereinafter, with reference to FIGS. 11 and 12, a second modified example of the second embodiment of the present application will be described.

FIG. 11 and FIG. 12 are drawings for explaining a nano mesh membrane according to a second modified example of the second embodiment of the present application, and FIG. 13 is a drawing for explaining a side wall of a pore of a nano mesh membrane according to a second modified example of the second embodiment of the present application.

Referring to FIGS. 11 to 13, the base membrane (210) may be provided as described with reference to FIGS. 7 to 9, and a functional film (230) may be formed on the base membrane (210).

The functional film (230) may be a conductive metal film. In addition, the functional film (230) may be formed of a material having higher conductivity than the base membrane (210). For example, the functional film (230) may include platinum (Pt). The functional film (230) may be formed to conformally cover the base membrane (210) by a sputtering method, and the thickness of the functional film (230) may be 5 to 10 nm.

After the functional film (230) is formed, the base membrane (210) can be irradiated with the ion beam (225) as described with reference to FIGS. 7 to 9. If the base membrane (210) is formed of a non-conductive material (e.g., Si3N4), it is not easy to manufacture the nano-mesh membrane (220) by irradiating the ion beam (225). In other words, if ions are accumulated (charging effect) by the ion beam (225) inside the non-conductive base membrane (210), the subsequent focusing and path of the ion beam (225) may be disturbed. However, when the functional film (230) having conductivity as described above is formed on the base membrane (210), the phenomenon of ion accumulation can be minimized, and thus, the nano mesh membrane (220) can be easily formed with the ion beam (225).

If the thickness of the functional film (230) is excessively thin, charging occurs by the ion beam (225), and if the thickness of the functional film (230) is excessively thick, the pores (224) may not be easily formed by the ion beam (225). Accordingly, the thickness of the functional film (230) may be thinner than the thickness of the base membrane (210), and for example, the thickness of the functional film (230) may be 5 to 10 nm as described above.

For example, when the base membrane (210) is silicon nitride, the functional film (230) is platinum, and the ion beam (225) contains gallium ions, a nano mesh membrane (220) having a line width of 100 nm can be manufactured.

According to one embodiment, the step of forming the functional film (230) and the step of irradiating the ion beam (225) can be performed repeatedly and alternately. Accordingly, the phenomenon of ions accumulating inside the base membrane (210) due to loss of the functional film (230) during the irradiation process of the ion beam (225) can be minimized.

The pores (224) formed by the ion beam (225) may be arranged spaced apart from each other and may be provided by penetrating the base membrane (210) and the functional film (230). In addition, as described above, after the functional film (230) is formed on the base membrane (210), the pores (224) are formed by irradiation with the ion beam (225), so that the functional film (230) may not be provided on the side walls of a plurality of the pores (224).

In addition, as illustrated in FIG. 13, a portion (210s) of the base membrane (210) forming the side walls of the plurality of pores (224) and a portion (230s) of the functional membrane (230) forming the side walls of the plurality of pores (230) may be coplanar with each other. In other words, after the functional film (230) is formed on the base membrane (210), a plurality of pores (230) can be formed by the ion beam (225) that sequentially passes through the functional film (230) and the base membrane (210), and as a result, a part (210s) of the base membrane (210) forming the side walls of the plurality of pores (224) and a part (230s) of the functional film (230) forming the side walls of the plurality of pores (230) can form a coplanar surface with each other.

According to a third modified example of the second embodiment, in the third embodiment of the present application described above, the base membrane (220) can rotate during the process in which the ion beam (225) is irradiated onto the base membrane (220). Hereinafter, with reference to FIG. 14, a third modified example of the second embodiment of the present application will be described.

FIG. 14 is a drawing for explaining a nano mesh membrane according to a third modified example of the second embodiment of the present application.

Referring to FIG. 14, the base membrane (210) is provided as described with reference to FIGS. 7 to 9, and the base membrane (210) can rotate during the process of irradiating the ion beam (225) to the base membrane (210).

Specifically, the ion beam (225) may be irradiated while the base membrane (210) rotates with the normal direction (240) of the upper surface of the base membrane (210) as the rotation axis. As a result, the positive deviation of the ion beam (225) irradiated to each area of the base membrane (210) may be eliminated. In addition, according to one embodiment, the ion beam (225) may be irradiated while rotating in a state where the irradiation direction of the ion beam (225) and the normal direction (240) of the upper surface of the base membrane (210) are arranged to intersect each other (or form an acute angle).

According to a fourth modified example of the second embodiment, after the functional film (230) is formed and pores (224) are formed according to the second modified example of the second embodiment of the present application described with reference to FIGS. 11 to 13, a material film may be additionally formed according to the first modified example of the present application described with reference to FIGS. 1 to 3. Hereinafter, a fourth modified example of the second embodiment according to the embodiment of the present application will be described with reference to FIG. 15.

FIG. 15 is a drawing for explaining a nano mesh membrane according to a fourth modified example of the second embodiment of the present application.

Referring to FIG. 15, according to a second modified example of the second embodiment of the present application described with reference to FIGS. 11 to 13, the functional film (230) is formed on the base membrane (210), and the ion beam (225) is irradiated, so that a plurality of pores (224) can be formed.

Thereafter, a material film (240) can be formed in the same manner as the method for manufacturing the material film (121) according to the first embodiment of the present application described with reference to FIGS. 1 to 3. The material film (240) can cover the side walls of the pores (224), and the material film can cover the upper surface of the functional film (230). Accordingly, the size of the pores (224) can be reduced, and the size of the pores (224) can be controlled by a simple method for controlling the thickness of the material film (240).

The doping ions injected by the ion beam (225) may be provided within the functional film (230) and/or the base membrane (210), and the doping ions may include, for example, at least one of gallium ions, argon ions, neon ions, helium ions, or hydrogen ions. On the other hand, the doping ions may not be provided within the material film (240) formed after the ion beam (225) is injected.

In addition, the material film (240) is formed by a material and manufacturing process that can be easily thickness-controlled and conformally manufactured to reduce the pore size of the membrane in which the pores (224) are already formed, as described with reference to FIGS. 1 to 3.

In addition, according to one embodiment, in order to prevent ions from being accumulated by the ion beam (225) as described above, the functional film (230) may be formed of a material having high electrical conductivity compared to the material film (240). In this case, the functional film (230) having relatively high conductivity and the material film (240) having relatively low conductivity may be sequentially provided on the upper surface of the base membrane (210), and the material film (240) may be provided on the sidewall of the pore (224).

Alternatively, according to another embodiment, the material film (121) may be formed of the same conductive material as the functional film (230). In this case, a conductive material having a relatively thick thickness may be provided on the upper surface of the base membrane (210), and a conductive material having a relatively thin thickness may be provided on the side walls of the pores (224).

Below, the results of evaluating the characteristics of a nano mesh membrane according to a specific experimental example of the present application are described.

Figures 16 to 18 are SEM photographs of nano mesh membranes according to experimental examples of the present application.

Referring to FIGS. 16 to 18, a silicon nitride membrane having a thickness of 100 nm was prepared as a base membrane. Platinum was deposited as a functional film on the silicon nitride membrane to a thickness of 5 to 10 nm using a sputtering process.

Afterwards, a gallium ion beam was irradiated at 30 kV to form pores penetrating the silicon nitride membrane on which platinum was formed.

By controlling the focus size of the gallium ion beam, groove-shaped pores extending in parallel with a relatively narrow width and cross-shaped pores with a relatively wide width were formed.

As shown in FIGS. 16 to 18, it can be confirmed that pores of various shapes can be formed and pores of various sizes can be easily formed.

The nano-mesh membrane manufactured according to the above-described embodiments and modified examples can be utilized as an optical filter. More specifically, when light is irradiated to the nano-mesh membrane, and in the wavelength band of the light irradiated to the nano-mesh membrane, light of a target wavelength band can transmit through the nano-mesh membrane, and light of a wavelength band different from the target wavelength band can be blocked by the nano-mesh membrane. For example, the light of the target wavelength band can be EUV light, and the light of the other wavelength band can be hard X-ray. When the thickness of the base membrane and/or the functional film constituting the nano-mesh membrane is too thin, or when the material constituting the base membrane and/or the functional film is not suitable for blocking light of the other wavelength band, by a method of forming a material film suitable for blocking light of the other wavelength band with a sufficient thickness, the light of the other wavelength band can be easily blocked.

In addition, the nano-mesh membrane manufactured according to the above-described embodiments and modifications can be used in a patterning process. More specifically, the nano-mesh membrane manufactured according to the above-described embodiments and modifications is prepared, and light (e.g., EUV, ArF, ion beam, electron beam, visible light, UV, soft x-ray (including water window), hard x-ray, etc.) is irradiated onto the nano-mesh membrane, and a light-sensitive film (e.g., photoresist) can react by the light transmitted through the nano-mesh membrane. In particular, the nano-mesh membrane according to the above-described embodiments and modifications can be used as a mask for a patterning process (lithography process) using an electron beam.

In addition, the nano-mesh membrane manufactured according to the above-described embodiments and modified examples can be used as a filter (e.g., a pellicle) that filters light. More specifically, the nano-mesh membrane can have remarkably high transmittance for light of a first wavelength band to be transmitted (e.g., EUV) and remarkably low transmittance for light of a second wavelength band to be blocked (e.g., UV, visible light, X-rays, infrared, etc.).

In addition, the nano-mesh membrane manufactured according to the above-described embodiments and modifications may be included in an optical device. In this case, light may be irradiated to the nano-mesh membrane by a light source that generates light, and an optical system that guides the light transmitted through the nano-mesh membrane to a target may be included in the optical device.

Additionally, the nano-mesh membrane manufactured according to the above-described embodiments and modifications may include an EUV lithography apparatus. In this case, EUV light may be provided to the nano-mesh membrane by a light source that generates EUV light.

In addition, the nano-mesh membrane manufactured according to the above-described embodiments and modified examples can be utilized to manufacture other filters. For example, the nano-mesh membrane manufactured according to the above-described embodiments and modified examples can be manufactured into a filter by patterning a photosensitive film on a material film using a patterning process (e.g., EUV, ArF, electron beam, etc.) as a mask, and etching the material film using the patterned photosensitive pattern of the photosensitive film as a mask.

Additionally, the nano-mesh membrane manufactured according to the embodiments and modifications described above can be used to perform the role of a filter that performs the physical function of filtering particles.

Above, although the present invention has been described in detail using preferred embodiments, the scope of the present invention is not limited to specific embodiments, and should be interpreted by the appended claims. In addition, those who have acquired common knowledge in this technical field should understand that many modifications and variations are possible without departing from the scope of the present invention.

Nano mesh membranes according to embodiments of the present invention can be used for various purposes, such as lithography processes, optical filters, particle filters, and masks for filter production.

Claims (13)

A method for manufacturing a nano mesh membrane having a plurality of pores formed spaced apart from each other, Steps to prepare the base membrane; A step of forming a functional film on the above base membrane; and A method for manufacturing a nano mesh membrane, comprising the step of irradiating an ion beam onto the base membrane on which the functional film is formed, allowing the ion beam to penetrate the functional film and the base membrane, and manufacturing the nano mesh membrane having a plurality of pores created in the process of the ion beam penetrating the functional film and the base membrane. In the first paragraph, A method for manufacturing a nano mesh membrane, wherein the ion beam is irradiated onto the functional film of the base membrane. In the first paragraph, A method for manufacturing a nano mesh membrane, wherein the functional membrane has higher electrical conductivity than the base membrane. In the first paragraph, A method for manufacturing a nano mesh membrane, wherein the functional membrane has a thickness thinner than the thickness of the base membrane. In the first paragraph, A method for manufacturing a nano mesh membrane, wherein the ion beam includes at least one of gallium ions, argon ions, neon ions, helium ions, or hydrogen ions. base membrane; and A functional film is formed of a material having higher conductivity than the base membrane and is disposed on the base membrane, A plurality of pores spaced apart from each other are provided to penetrate the base membrane and the functional membrane, A nano mesh membrane including the functional film provided on the upper surface of the base membrane, but not provided on the side walls of the plurality of pores. In Article 6, A nano mesh membrane comprising a portion of the base membrane forming side walls of the plurality of pores and a portion of the functional membrane forming side walls of the plurality of pores, wherein the portions are coplanar with each other. In Article 6, A nano mesh membrane comprising a functional membrane having a thickness thinner than that of the base membrane. In Article 6, The above base membrane is a nano mesh membrane containing an insulating material. A step of preparing the nano mesh membrane according to any one of claims 6 to 9; and Including the step of irradiating the above nano mesh membrane light, A method of utilizing a nano-mesh membrane, wherein, in a wavelength band of light irradiated to the nano-mesh membrane, light of a target wavelength band transmits the nano-mesh membrane, and light of a wavelength band other than the target wavelength band is blocked by the nano-mesh membrane. A step of preparing the nano mesh membrane according to any one of claims 6 to 9; A step of irradiating the above nano mesh membrane light; A patterning method comprising a step of causing a photosensitive film to react to light passing through the nano mesh membrane. A light source that produces light; The nano mesh membrane according to any one of claims 6 to 9, wherein light generated from the light source is irradiated; and An optical device including an optical system that guides light transmitted through the nano mesh membrane to a target. A light source that generates EUV light; and An EUV lithography apparatus comprising the nano-mesh membrane according to any one of claims 6 to 9, wherein EUV light generated from the light source is irradiated.

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