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WO2025126477A1 - Laser à semi-conducteur - Google Patents

Laser à semi-conducteur Download PDF

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Publication number
WO2025126477A1
WO2025126477A1 PCT/JP2023/045102 JP2023045102W WO2025126477A1 WO 2025126477 A1 WO2025126477 A1 WO 2025126477A1 JP 2023045102 W JP2023045102 W JP 2023045102W WO 2025126477 A1 WO2025126477 A1 WO 2025126477A1
Authority
WO
WIPO (PCT)
Prior art keywords
diffraction grating
bragg reflector
distributed bragg
region
reflector region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/JP2023/045102
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English (en)
Japanese (ja)
Inventor
絵理奈 菅野
浩司 武田
慎治 松尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to PCT/JP2023/045102 priority Critical patent/WO2025126477A1/fr
Publication of WO2025126477A1 publication Critical patent/WO2025126477A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers

Definitions

  • the present invention relates to a semiconductor laser.
  • FIG. 3A is a characteristic diagram showing the calculation results of the effect of reducing optical loss by gradually changing the depth of the concave portions of the periodic concaves and convexes that make up a diffraction grating from the end portions.
  • FIG. 3B is a characteristic diagram showing the calculation results of the effect of reducing optical loss by gradually changing the depth of the concave portions of the periodic concaves and convexes that make up the diffraction grating from the end portions.
  • FIG. 3C is a characteristic diagram showing the calculation results of the effect of reducing optical loss by gradually changing the depth of the concave portions of the periodic concaves and convexes that make up the diffraction grating from the end portions.
  • active layer 103 is formed on and in contact with semiconductor layer 104a
  • semiconductor layer 104b is formed on and in contact with active layer 103
  • n-type semiconductor layer 105 and p-type semiconductor layer 106 are formed on the sides of the stacked structure of semiconductor layer 104a, active layer 103, and semiconductor layer 104b.
  • the depth of the recesses of the first diffraction grating 121a and the second diffraction grating 121b is made shallower as it approaches the active region 131, so that the refractive index difference at the first connection 151 between the active region 131 and the first distributed Bragg reflector region 132a can be reduced. Similarly, the refractive index difference at the second connection 152 between the active region 131 and the second distributed Bragg reflector region 132b can be reduced.
  • the depth of the recesses of the first diffraction grating 121a is made shallower as it approaches the output end 141, so that the refractive index difference at the connection (output end 141) between the emitted laser and the optical waveguide to which it is optically coupled can be reduced.
  • the coupling coefficient (refractive index change) of the diffraction grating can be increased while suppressing scattering at the connection.
  • Figure 3A shows the transmission and reflection spectrum when light is incident on a distributed Bragg reflector region (waveguide) in which a diffraction grating of the comparative configuration is formed.
  • Figure 3B shows the transmission and reflection spectrum when light is incident on a distributed Bragg reflector region (waveguide) in which a diffraction grating of the configuration shown in Figure 2 is formed.
  • Figure 4 shows how light propagates as seen from above when it is incident on a distributed Bragg reflector region (waveguide) in which a diffraction grating is formed.
  • a distributed Bragg reflector region waveguide
  • Figure 4(b) when the depth of the recess in the diffraction grating is changed in stages, scattering is suppressed.
  • Figure 5 shows the effective length of the diffraction grating.
  • the vertical axis shows the absolute value of the Poynting vector of the light propagating through the distributed Bragg reflector region.
  • the penetration depth until the light intensity is reduced to half is 1.7 ⁇ m, but compared to when the depth is constant (solid line), the increase is kept to less than 1 ⁇ m, and the impact on the laser characteristics is extremely small.
  • This semiconductor laser comprises an active region 131, and a first distributed Bragg reflector region 132a and a second distributed Bragg reflector region 132b arranged contiguous to the active region 131.
  • the active region 131, the first distributed Bragg reflector region 132a and the second distributed Bragg reflector region 132b are formed on the same substrate 101 with a lower cladding layer 102 interposed therebetween.
  • the first distributed Bragg reflector region 132a and the second distributed Bragg reflector region 132b are formed contiguously with the active region 131, sandwiching the active region 131 in the waveguiding direction.
  • the first distributed Bragg reflector region 132a includes a first diffraction grating 221a
  • the second distributed Bragg reflector region 132b includes a second diffraction grating 221b.
  • the active region 131 has an active layer 103 made of a compound semiconductor.
  • the first distributed Bragg reflector region 132a is formed contiguous with the active layer 103 and includes a first core layer 113a made of a compound semiconductor.
  • the second distributed Bragg reflector region 132b is formed contiguous with the active layer 103 and includes a second core layer 113b made of a compound semiconductor.
  • the first diffraction grating 221a is composed of a recess formed in the first distributed Bragg reflector region 132a and a protrusion adjacent to the recess.
  • the second diffraction grating 221b is composed of a recess formed in the second distributed Bragg reflector region 132b and a protrusion adjacent to the recess.
  • active region 131 includes n-type semiconductor layer 105 and p-type semiconductor layer 106 formed in contact with active layer 103. It also includes n-type electrode 107 electrically connected to n-type semiconductor layer 105, and p-type electrode 108 electrically connected to p-type semiconductor layer 106. Active layer 103 is sandwiched between semiconductor layers 104a and 104b made of a compound semiconductor such as undoped InP in the vertical direction as viewed from substrate 101.
  • the n-type semiconductor layer 105 and the p-type semiconductor layer 106 are not formed, and the side surface of the first core layer 113a in the waveguiding direction is open.
  • the n-type electrode 107 and the p-type electrode 108 are not formed.
  • the pitch (the distance between adjacent convex portions or adjacent concave portions) of the first diffraction grating 221a and the second diffraction grating 221b is increased as it approaches the active region 131.
  • the pitch of the first diffraction grating 221a is increased as it approaches the emission end 141.
  • the pitch of the second diffraction grating 221b can be made uniform (the same) toward the end 142, but the pitch of the second diffraction grating 221b can also be increased as it approaches the end 142.
  • the pitch of the first diffraction grating 221a and the second diffraction grating 221b is increased as they approach the active region 131, so that the refractive index difference at the first connection 151 between the active region 131 and the first distributed Bragg reflector region 132a can be reduced.
  • the refractive index difference at the second connection 152 between the active region 131 and the second distributed Bragg reflector region 132b can be reduced.
  • the pitch of the first diffraction grating 121a is increased as it approaches the output end 141, so that the refractive index difference at the connection (output end 141) between the emitted laser and the optical waveguide to which it is optically coupled can be reduced.
  • the coupling coefficient (refractive index change) of the diffraction grating can be increased while suppressing scattering at the connection.
  • Figure 4 shows how light propagates as seen from above when it is incident on a distributed Bragg reflector region (waveguide) in which a diffraction grating is formed.
  • Figure 4(b) when the pitch of the diffraction grating is changed in stages, scattering is suppressed.
  • the first diffraction grating and the second diffraction grating can be combined with a configuration in which the pitch is larger as they approach the active region. With this configuration as well, scattering at the connection between the waveguide region and the active region can be suppressed and the change in refractive index of the diffraction grating can be increased.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Une première région de réflecteur de Bragg distribué (132a) et une seconde région de réflecteur de Bragg distribué (132b) sont formées en continu avec une région active (131), la région active (131) étant interposée entre elles dans une direction de guide d'ondes. La première région de réflecteur de Bragg distribué (132a) est pourvue d'un premier réseau de diffraction (121a) et la seconde région de réflecteur de Bragg distribué (132b) est pourvue d'un second réseau de diffraction (121b). Le premier réseau de diffraction (121a) est composé d'évidements formés dans la première région de réflecteur de Bragg distribué (132a) et de saillies adjacentes aux évidements. De même, le second réseau de diffraction (121b) est composé d'évidements formés dans la seconde région de réflecteur de Bragg distribué (132b) et de saillies adjacentes aux évidements. Dans le premier réseau de diffraction (121a) et le second réseau de diffraction (121b), la profondeur des évidements devient moins profonde vers la région active (131).
PCT/JP2023/045102 2023-12-15 2023-12-15 Laser à semi-conducteur Pending WO2025126477A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/045102 WO2025126477A1 (fr) 2023-12-15 2023-12-15 Laser à semi-conducteur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/045102 WO2025126477A1 (fr) 2023-12-15 2023-12-15 Laser à semi-conducteur

Publications (1)

Publication Number Publication Date
WO2025126477A1 true WO2025126477A1 (fr) 2025-06-19

Family

ID=96056880

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2023/045102 Pending WO2025126477A1 (fr) 2023-12-15 2023-12-15 Laser à semi-conducteur

Country Status (1)

Country Link
WO (1) WO2025126477A1 (fr)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012054367A (ja) * 2010-08-31 2012-03-15 Nippon Telegr & Teleph Corp <Ntt> 半導体素子およびその作製方法
US20180183207A1 (en) * 2015-04-30 2018-06-28 Apple Inc. Vernier effect dbr lasers incorporating integrated tuning elements

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012054367A (ja) * 2010-08-31 2012-03-15 Nippon Telegr & Teleph Corp <Ntt> 半導体素子およびその作製方法
US20180183207A1 (en) * 2015-04-30 2018-06-28 Apple Inc. Vernier effect dbr lasers incorporating integrated tuning elements

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