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WO2025125073A1 - Dispositif et procédé d'usinage d'une pièce au moyen d'au moins deux faisceaux laser - Google Patents

Dispositif et procédé d'usinage d'une pièce au moyen d'au moins deux faisceaux laser Download PDF

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Publication number
WO2025125073A1
WO2025125073A1 PCT/EP2024/084838 EP2024084838W WO2025125073A1 WO 2025125073 A1 WO2025125073 A1 WO 2025125073A1 EP 2024084838 W EP2024084838 W EP 2024084838W WO 2025125073 A1 WO2025125073 A1 WO 2025125073A1
Authority
WO
WIPO (PCT)
Prior art keywords
laser
laser beam
wavelength
workpiece
beams
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/EP2024/084838
Other languages
German (de)
English (en)
Inventor
Torsten Mans
Christian Weddeling
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Trumpf Laser Se
Original Assignee
Trumpf Laser Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Trumpf Laser Se filed Critical Trumpf Laser Se
Publication of WO2025125073A1 publication Critical patent/WO2025125073A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B23K26/0608—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams in the same heat affected zone [HAZ]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
    • B23K26/0676—Dividing the beam into multiple beams, e.g. multifocusing into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2383—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2383—Parallel arrangements
    • H01S3/2391—Parallel arrangements emitting at different wavelengths

Definitions

  • the invention relates to a device for machining a workpiece by means of at least two laser beams with features of claim 1 and to a method for machining a workpiece by means of at least two laser beams with features of the independent claim.
  • Laser intensity is usually technically difficult. It is therefore an object of the present invention to provide a device and a method for machining a workpiece by means of at least two laser beams, wherein the above disadvantages are eliminated.
  • a device for machining a workpiece by means of at least two laser beams having the features of claim 1.
  • the device comprises a first laser device for generating a first laser beam having a first wavelength and a second laser device for generating a second laser beam having a second wavelength different from the first wavelength.
  • the device comprises a superposition device for generating a superimposed laser beam by superimposing, in particular coherently, the first and second laser beams.
  • the superposition device can comprise a lens for coupling the first and second laser beams (e.g. into a fiber) or can be designed as such a lens.
  • the superposition unit can be designed as a single-mode fiber combiner.
  • the device comprises an amplifier device for amplifying the superimposed laser beam and a separating device for separating the superimposed laser beam into the first and the second laser beam.
  • the superimposed laser beam can have a spectral bandwidth that lies within a spectral bandwidth of the amplifier device.
  • the separating device can be arranged after the amplifier device The separating device can be designed to introduce an angular dispersion of the first and second laser beams.
  • the device also comprises a focusing device for focusing the first laser beam onto a first position on the workpiece and for focusing the second laser beam onto a second position on the workpiece that is different from the first position.
  • the first position is arranged at a distance from the second position on the workpiece.
  • the distance between the first position and the second position means a distance between a first center point of the first laser beam focused on the workpiece and a center point of the second laser beam focused on the workpiece along a surface of the workpiece. It is conceivable that the laser spots generated on the workpiece by the two laser beams can overlap.
  • the focusing device may have a focal length of 600 mm (millimeters).
  • Wavelengths can each lie in a spectral band from -70 nm to +70 nm around 1030 nm.
  • the amplifier device can comprise a rod amplifier, a fiber, a slab amplifier and/or a disk amplifier.
  • the individual amplifiers mentioned above can, If present, they should be arranged one after the other in the order mentioned above.
  • a different order of the amplifiers mentioned above, if present, is also conceivable.
  • the amplifier device could also include a different amplifier.
  • the amplifier device can comprise an active medium (e.g. Yb:glass, Yb:LuAG (ytterbium-doped lutetium aluminum garnet), Yb:YAG (ytterbium-doped yttrium aluminum garnet) or Yb-doped fused silica).
  • the active medium can comprise laser-active ions (e.g. Yb3+).
  • the active medium can be Yb-doped.
  • the active medium can be arranged within an amplifier, e.g. a fiber.
  • the device may include a Mamyshev regenerator for shortening pulses.
  • the Mamyshev regenerator may be arranged upstream of the amplifier device.
  • terms such as "before” an element or “after” an element refer to a propagation direction of the first laser beam, the second laser beam and/or the superimposed laser beam.
  • the separating device can comprise at least one dispersive element.
  • the dispersive element can be designed as an optical grating and/or as a prism. This allows the separation device to be moved using simple means and the superimposed laser beam to be separated again into the first and second laser beams.
  • the separation device can comprise at least two dispersive elements.
  • the at least two dispersive elements can be configured such that a distance between the first and the second laser beam can be adjusted by varying a distance and/or an orientation of the at least two dispersive elements relative to one another.
  • the two dispersive elements can be mounted so they can rotate. This allows, for example, the angle between the two dispersive elements to be adjusted about an axis perpendicular to the propagation or dispersion plane. A distance between the first position of the first laser beam and the second position of the second laser beam on the workpiece can thus be adjusted, for example, by rotating the first and/or the second dispersive element.
  • the separating device can be designed such that the first and the second laser beam, after separation, have a distance in an angular space which lies in a range from 1 prad (microradian) to 1 mrad (milliradian). This allows the first and second laser beams to be optimally processed, particularly focused on the workpiece.
  • the first and the second laser device can each comprise at least one pulsed laser.
  • the pulsed laser can have a pulse duration in a range from 100 fs (femtosecond) to 1 ps (microsecond), in particular in a range from at least 40 ps (picosecond) to a maximum of 1 ns (nanosecond).
  • the pulsed laser can have a pulse repetition rate of 200 MHz (megahertz) to 800 MHz.
  • the first and the second laser device can each comprise at least one CW (continuous wave) laser.
  • a laser diode in particular a gain-switch diode, preferably a DFB (distributed feedback) diode, can be implemented as the laser source.
  • the device can comprise at least one third laser device for generating a third laser beam with a third wavelength.
  • the third wavelength can be different from the first and/or the second wavelength.
  • the third laser device can comprise at least one pulsed laser (in particular with pulses in a range of 1 ns (nanosecond) to 1 ms (microsecond)) or at least one CW laser (or a long-pulsed laser diode).
  • the third wavelength can be at the edge of an amplifier bandwidth of the amplifier device.
  • the third laser beam can be used to compensate for or adapt the inversion in the amplifier device.
  • the device may comprise a fourth laser device for generating a fourth laser beam with a fourth wavelength.
  • the first, second and fourth laser beams can each be generated by means of a pulsed laser.
  • the first, second and fourth wavelengths can be spaced apart from a central wavelength of 1 nm (nanometer).
  • the first wavelength can be 1029 nm
  • the second wavelength can be 1030 nm
  • the fourth wavelength can be 1031 nm.
  • a spectral width of the first, second and fourth laser devices (or their respective pulsed lasers) can be less than 0.1 nm. In this case (analogous to two laser beams) three laser beams are superimposed to form one superimposed laser beam, amplified and then separated again into three individual laser beams.
  • the number of laser beams that are superimposed, amplified and separated again can also be higher, i.e. four or more.
  • the number of laser beams that are superimposed, amplified and separated again can be limited, for example, by a bandwidth of the amplifier device or the active medium.
  • a ratio of a spectral width of each of the first wavelength and the second wavelength to a spectral distance between the first wavelength and the second wavelength can be 1:5, in particular 1:10, preferably 1:20.
  • the first and second laser beams can be optimally superimposed and separated. Furthermore, the ellipticity in the focus can be reduced by dispersion of the Separation device or the dispersive element must be kept low.
  • the first laser device can each comprise at least two pulse lasers.
  • the at least two, in particular all, pulse lasers can each be set up to generate a partial beam with the same wavelength.
  • At least two, in particular all, partial beams can be designed with a pulse shift. In particular, the shift can amount to more than one pulse duration.
  • At least two, in particular all, partial beams can form the first laser beam.
  • the second laser device can each comprise at least two pulse lasers.
  • the at least two, in particular all, pulse lasers can each be configured to generate a partial beam with the same wavelength.
  • At least two, in particular all, partial beams can be pulse-shifted.
  • At least two, in particular all, partial beams can form the second laser beam.
  • the first and/or the second laser device can comprise a tempering device for varying a temperature of the first and/or the second laser device.
  • the first and/or the second laser device can each be configured such that the first wavelength and/or the second wavelength (or whose respective central wavelength) can be shifted or varied.
  • the shift or variation can be in a range from 0.01 nm/K to 0.5 nm/K, in particular 0.06 nm/K (nanometers per Kelvin).
  • the temperature of the tempering device can be controlled, for example, by means of a T-control.
  • the temperature of the first and/or the second laser device can be varied or adjusted using simple means.
  • the wavelength of the first or the second laser device can be changed or adjusted using the temperature. This can be achieved in particular with diode lasers, in which the junction temperature of the pn junction determines the central wavelength of the amplification, or with DFB (Distributed Feedback) diodes, in which the spacing of the internal grating structure is changed.
  • DFB Distributed Feedback
  • the device can comprise a scanner optics system for moving the first and/or second laser beam on the workpiece.
  • the scanner optics system can be arranged in front of the focusing device.
  • the scanner optics can comprise a galvo scanner and/or a polygon scanner.
  • the device can comprise a converter device for converting the first and/or the second wavelength.
  • the wavelength can be halved or divided by a third or the frequency belonging to the respective wavelength can be doubled or tripled.
  • the converter device can comprise a non-linear crystal.
  • the converter device can be designed to filter out the third laser beam, in particular by means of the non-linear crystal.
  • the converter device can be arranged after or before the separating device.
  • the converter device can be arranged before the scanner optics.
  • the device can comprise at least one control device for controlling the first laser device, the second laser device, the third laser device, the separating device, the tempering device and/or the scanner optics.
  • the focusing device may be configured such that a distance between the first position and the second position is in a range from 0.5 gm (micrometers) to 5 mm, in particular 1 gm to 100 gm.
  • the above object is achieved by a method for machining a workpiece using at least two laser beams having the features of the independent claim.
  • the method comprises the steps:
  • Generating a superimposed laser beam by superimposing, in particular coherently, the first and second laser beams.
  • the method may comprise the step:
  • the method may comprise the step:
  • the method may comprise the step: Varying a temperature of the first and/or second laser device.
  • the method may comprise the step:
  • the method may comprise the step:
  • a device according to the above statements can be used to carry out the method.
  • Fig. 1 is a schematic representation of a device for machining a workpiece by means of at least two laser beams.
  • the device bears the reference numeral 10 in Figure 1.
  • the device 10 is designed to machine a workpiece 12 using at least two laser beams 16, 20.
  • the device 10 comprises a first laser device 14 for generating a first laser beam 16 with a first wavelength and a second laser device 18 for generating a second laser beam 20 with a second wavelength different from the first wavelength.
  • the device 10 comprises a superposition device 22 for generating a superimposed laser beam 24 by superimposing the first and second laser beams 16, 20.
  • the device 10 also comprises a separation device 28 for separating the superimposed laser beam 24 into the first and second laser beams 16, 20.
  • the device 10 comprises a focusing device 30 for focusing the first laser beam 16 to a first position on the workpiece 12 and for focusing the second Laser beam 20 to a second position on the workpiece 12 which is different from the first position.
  • the focusing device 30 can be configured such that a distance between the first position and the second position is in a range of 0.5 gm to 5 mm, in particular 1 gm to 100 gm.
  • the amplifier device 26 may comprise a rod amplifier, a fiber, a slab amplifier and/or a disk amplifier.
  • the separating device 28 may comprise at least one dispersive element. This may be configured, for example, as an optical grating and/or as a prism.
  • the separation device 28 can comprise at least two dispersive elements.
  • the at least two dispersive elements can be configured such that a distance between the first and second laser beams 16, 20 can be adjusted by varying a distance and/or an orientation of the at least two dispersive elements relative to one another.
  • the separating device 28 can be configured such that the first and second laser beams 16, 20, after separation, have a distance in an angular space which lies in a range from 1 degree to 1 mrad.
  • the first and second laser devices 14, 18 may each comprise at least one pulsed laser and/or at least one CW laser.
  • the device 10 may comprise at least one third laser device for generating a third Laser beam having a third wavelength (not shown).
  • the third laser device may comprise at least one pulsed laser or at least one CW laser.
  • the ratio of a spectral width of each of the first wavelength and the second wavelength to a spectral distance between the first wavelength and the second wavelength can be 1:5, in particular 1:10, preferably 1:20.
  • the first laser device 14 can comprise at least two pulsed lasers.
  • the at least two, in particular all, pulsed lasers can each be configured to generate a partial beam with the same wavelength.
  • At least two, in particular all, partial beams can be configured with pulse shifts.
  • At least two, in particular all, partial beams can form the first laser beam 16.
  • the second laser device 18 can comprise at least two pulsed lasers.
  • the at least two, in particular all, pulsed lasers can each be configured to generate a partial beam with the same wavelength.
  • At least two, in particular all, partial beams can be configured with pulse shifts.
  • At least two, in particular all, partial beams can form the second laser beam 20.
  • the first and second laser devices 14, 18 each comprise a temperature control device 32 for varying a temperature of the first and second laser devices 14, 18, respectively.
  • the device 10 comprises a scanner optics 34 for moving the first and/or second laser beam 16, 20 on the workpiece 12.
  • the scanner optics 34 can comprise a galvo scanner and/or a polygon scanner.
  • the scanner optics 34 are arranged in front of the focusing device 30.
  • the device 10 comprises a converter device 36 for converting the first and second wavelengths.
  • the respective wavelength can be halved or divided into thirds, for example.
  • the converter device 36 is arranged in front of the scanner optics 34.
  • the device 10 comprises a control device 38.
  • the control device 38 is configured to control the first laser device 14, the second laser device 18, the separating device 28, the temperature control device 32 of the first laser device 14, the temperature control device 32 of the second laser device 18 and the scanner optics 34.
  • the procedure includes the following steps:
  • the method may comprise at least one of the following steps:
  • a device 10 according to the above embodiments in particular the device 10 shown in Figure 1, can be used.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)

Abstract

L'invention concerne un dispositif (10) ayant les caractéristiques de la revendication 1 pour usiner une pièce (12) au moyen d'au moins deux faisceaux laser (16, 20) et un procédé ayant les caractéristiques de la revendication indépendante supplémentaire pour usiner une pièce (12) au moyen d'au moins deux faisceaux laser (16, 20).
PCT/EP2024/084838 2023-12-14 2024-12-05 Dispositif et procédé d'usinage d'une pièce au moyen d'au moins deux faisceaux laser Pending WO2025125073A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102023135197.4A DE102023135197A1 (de) 2023-12-14 2023-12-14 DWM in SSL zur Parallelisierung
DE102023135197.4 2023-12-14

Publications (1)

Publication Number Publication Date
WO2025125073A1 true WO2025125073A1 (fr) 2025-06-19

Family

ID=93853379

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2024/084838 Pending WO2025125073A1 (fr) 2023-12-14 2024-12-05 Dispositif et procédé d'usinage d'une pièce au moyen d'au moins deux faisceaux laser

Country Status (2)

Country Link
DE (1) DE102023135197A1 (fr)
WO (1) WO2025125073A1 (fr)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6031201A (en) * 1993-06-04 2000-02-29 Seiko Epson Corporation Laser machining apparatus with rotatable phase grating
US20030052105A1 (en) * 2001-09-10 2003-03-20 Fuji Photo Film Co., Ltd. Laser sintering apparatus
US20040134896A1 (en) * 1999-12-28 2004-07-15 Bo Gu Laser-based method and system for memory link processing with picosecond lasers
DE102012209837A1 (de) * 2012-06-12 2013-12-12 Trumpf Laser- Und Systemtechnik Gmbh EUV-Anregungslichtquelle mit einer Laserstrahlquelle und einer Strahlführungsvorrichtung zum Manipulieren des Laserstrahls
US20190001442A1 (en) * 2015-09-09 2019-01-03 Electro Scientific Industries, Inc. Laser processing apparatus, methods of laser-processing workpieces and related arrangements
US20220266379A1 (en) * 2019-11-13 2022-08-25 Nuvoton Technology Corporation Japan Laser processing device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100396510B1 (ko) 2001-09-11 2003-09-02 삼성전자주식회사 분산 보상된 광섬유 증폭기
WO2016188546A1 (fr) 2015-05-22 2016-12-01 Trumpf Laser Gmbh Appareil de génération d'un faisceau laser haute puissance et dispositif de génération d'un faisceau euv ayant recours à cet appareil
CN109475976A (zh) 2016-07-14 2019-03-15 三菱电机株式会社 激光加工装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6031201A (en) * 1993-06-04 2000-02-29 Seiko Epson Corporation Laser machining apparatus with rotatable phase grating
US20040134896A1 (en) * 1999-12-28 2004-07-15 Bo Gu Laser-based method and system for memory link processing with picosecond lasers
US20030052105A1 (en) * 2001-09-10 2003-03-20 Fuji Photo Film Co., Ltd. Laser sintering apparatus
DE102012209837A1 (de) * 2012-06-12 2013-12-12 Trumpf Laser- Und Systemtechnik Gmbh EUV-Anregungslichtquelle mit einer Laserstrahlquelle und einer Strahlführungsvorrichtung zum Manipulieren des Laserstrahls
US20190001442A1 (en) * 2015-09-09 2019-01-03 Electro Scientific Industries, Inc. Laser processing apparatus, methods of laser-processing workpieces and related arrangements
US20220266379A1 (en) * 2019-11-13 2022-08-25 Nuvoton Technology Corporation Japan Laser processing device

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