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WO2025115663A1 - Terahertz wave diffuser and method for manufacturing the same - Google Patents

Terahertz wave diffuser and method for manufacturing the same Download PDF

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Publication number
WO2025115663A1
WO2025115663A1 PCT/JP2024/040741 JP2024040741W WO2025115663A1 WO 2025115663 A1 WO2025115663 A1 WO 2025115663A1 JP 2024040741 W JP2024040741 W JP 2024040741W WO 2025115663 A1 WO2025115663 A1 WO 2025115663A1
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WIPO (PCT)
Prior art keywords
incident
thz wave
diffuser
thz
terahertz wave
Prior art date
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French (fr)
Japanese (ja)
Inventor
知行 大谷
智一 彌田
裕司 小堀
昌弘 小出
利哉 大木
Gouki SATOU (佐藤 剛毅)
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Panac Co Ltd
RIKEN
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Panac Co Ltd
RIKEN
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Publication of WO2025115663A1 publication Critical patent/WO2025115663A1/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P11/00Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/14Reflecting surfaces; Equivalent structures
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00Screening of apparatus or components against electric or magnetic fields

Definitions

  • the present disclosure relates to a terahertz wave diffuser and a method for manufacturing the same. More specifically, the present disclosure relates to a terahertz wave diffuser in which the phase of an incident terahertz wave is disturbed, and a method for manufacturing the same.
  • Electromagnetic waves with frequencies of 0.1 THz to 100 THz are also called terahertz waves (hereinafter also written as “THz waves”) and are expected to have a wide range of applications.
  • THz waves terahertz waves
  • Beyond 5G/6G the use of electromagnetic waves exceeding 300 GHz and reaching the THz wave band is also expected.
  • Non-Patent Document 1 discloses a transceiver that uses silicon CMOS technology and can operate in the 300 GHz band.
  • Non-Patent Document 2 discloses a 446 GHz band RTD (resonant tunneling diode) radiation source with an active antenna array arranged in a 6 x 6 square lattice. THz waves are expected to be used not only for communication but also for detection purposes. For example, some of the inventors of this application have developed a walk-through body scanner that uses 300 GHz band THz waves (Non-Patent Documents 3 and 4).
  • THz waves As the uses of THz waves expand, absorbers (including low reflectors and transparent shielding materials, the same applies below) are also coming into use.
  • Eccosorb (registered trademark) AN-72 is a typical absorber of electromagnetic waves, including THz waves, available on the market.
  • the above-mentioned walk-through body scanner also uses a similar absorber on the inner walls of the device.
  • THz wave absorbers are used for a variety of purposes, with typical uses being anti-reflection, anti-transmission, and anti-interference to prevent noise.
  • Patent Document 1 discloses an interference-type radio wave shielding or absorbing body that is characterized by having a structure in which a left-handed radio wave propagation medium layer, which is made up of a group of micro-helical structures in which a conductive surface layer is formed on phytoplankton having a helical shape and in which the micro-helical structures are electrically or magnetically connected to form an aggregate, and a normal layer of a right-handed radio wave propagation medium are laminated.
  • a left-handed radio wave propagation medium layer which is made up of a group of micro-helical structures in which a conductive surface layer is formed on phytoplankton having a helical shape and in which the micro-helical structures are electrically or magnetically connected to form an aggregate, and a normal layer of a right-handed radio wave propagation medium are laminated.
  • Patent Document 2 Patent Document 3, Patent Document 5 disclose a method for manufacturing a micro-helical structure that uses phytoplankton as a material suitable for mass-producible micro-helical structures, and the micro-helical structure itself.
  • These technologies are examples of biotemplate technology that uses the shape of an algae called Spirulina as a template to create a metal helical structure.
  • One of the measures to suppress noise in the THz wave region is to use an absorbing material (including a shielding material; the same applies below) that can suppress the amplitude and intensity of reflected and transmitted waves, such as the black light-absorbing material used to prevent stray light in optical equipment (Non-Patent Documents 3 and 4).
  • an absorbing material including a shielding material; the same applies below
  • the black light-absorbing material used to prevent stray light in optical equipment
  • one aspect of the present disclosure provides a terahertz wave diffuser (THz wave diffuser) that includes a dispersion medium that transmits incident terahertz waves, and a particulate dispersoid that is dispersed and supported in the dispersion medium, with each particle having a material and a microstructure that responds to the incident terahertz waves.
  • THz wave diffuser terahertz wave diffuser
  • the incident THz wave is converted into, for example, an electric current and absorbed in response to the wave, and part of the energy of the incident THz wave is converted into a re-radiated THz wave.
  • the re-radiated THz wave is absorbed again by the surrounding THz wave diffuser, and this process is repeated while losing energy.
  • this THz wave diffuser attenuates the energy of the incident THz wave, and the effective optical path length is extended by diffusion, and the amplitude of the incident THz wave is attenuated while the phase is also disturbed, so that the re-radiated THz wave is less likely to adversely affect the phase information of the incident THz wave as noise.
  • the phase of the re-radiated THz wave is disturbed when viewed from the incident THz wave, so that, in addition to absorption, the adverse effect of noise can be suppressed.
  • THz waves refer to electromagnetic waves in the frequency range of approximately 0.1 THz to 100 THz (wavelength in a vacuum of 3 ⁇ m to 3 mm).
  • This application also uses terms for light, including visible light, to explain phenomena and functions of THz waves.
  • the emission or blocking of THz waves may be expressed using terms such as "illumination” and "shading.”
  • "random" refers to positions and orientations that are disrupted to the extent that the regularity is broken even slightly.
  • a diffuser can be provided that, when irradiated with an incident THz wave, produces re-radiated THz having a disturbed phase.
  • FIG. 1 is a perspective view of an exemplary THz wave diffuser according to an embodiment of the present disclosure.
  • FIG. 2 is an enlarged view showing the structure of particles constituting a particulate dispersoid in an embodiment of the present disclosure.
  • 3A and 3B are a structural diagram of spirulina used in an embodiment of the present disclosure (FIG. 3A) and a partially cutaway structural diagram of a metal microcoil in which a metal thin film is formed on spirulina (FIG. 3B).
  • 4A and 4B are explanatory diagrams illustrating the operation of the phase disturbance effect in an embodiment of the present disclosure, with FIG. 4A showing the effect upon transmission and FIG. 4B showing the effect upon reflection.
  • FIG. 3A shows the effect upon transmission
  • FIG. 4B showing the effect upon reflection.
  • FIG. 5 is a flow chart illustrating an exemplary method of manufacturing a THz wave diffuser in accordance with an embodiment of the present disclosure.
  • 6A and 6B are schematic diagrams showing an overview of the optical element arrangement of a reflectance measurement system in an embodiment of the present disclosure.
  • FIG. 7A is a graph showing a voltage waveform obtained by detecting an electromagnetic pulse emitted from a THz wave irradiator using a THz wave detector
  • FIG. 7B is a graph showing a power spectrum obtained from the voltage waveform.
  • 8A to 8C are photographs showing the appearance of each sample actually produced in the embodiment of the present disclosure (Example sample 1 (FIG. 8A), Example sample 2 (FIG. 8B)) and Comparative example sample 3 (FIG. 8C).
  • FIG. 9A-C show reflected signals in a reflection arrangement actually measured using the arrangement of FIG. 6A in an embodiment of the present disclosure, for example sample 1 (FIG. 9A), example sample 2 (FIG. 9B), and comparative example sample 3 (FIG. 9C).
  • 10A and 10B show reflectance spectra measured in a reflection configuration for samples according to an embodiment of the present disclosure, and are the reflectance spectra obtained from Example Sample 1 (FIG. 10A) and Comparative Example Sample 3 (FIG. 10B), respectively.
  • FIG. 1 is a perspective view of a typical THz wave diffuser 100 of this embodiment.
  • THz waves (not shown in FIG. 1) are incident on the THz wave diffuser 100 from an external space. These THz waves are hereinafter referred to as "incident THz waves.”
  • the dispersion medium 2 does not have a strong effect when the incident THz waves pass through the THz wave diffuser 100. In other words, the dispersion medium 2 only acts to slightly attenuate or refract the incident THz waves, and allows them to pass through.
  • the particulate dispersoid 10 responds electromagnetically to the incident THz waves.
  • the individual particles 1 constituting the particulate dispersoid 10 are manufactured so as to have a material and a fine structure that respond to the incident THz waves.
  • Typical examples of the dispersion medium 2 are insulating materials such as polystyrene foam and urethane resin.
  • the particulate dispersoid 10 of the present disclosure is an aggregate of individual particles 1 having a material and a microstructure that electromagnetically responds to incident THz waves.
  • FIG. 2 is an enlarged view showing the structure of an individual particle 1 that constitutes the particulate dispersoid.
  • a typical example of the individual particle 1 is a metal microcoil 3, and such a metal microcoil 3 is preferably formed by forming a film of a metal (nickel, copper, etc.) on the surface of spirulina 4 by any method such as electroless plating.
  • 3A and 3B are respectively a structural diagram of spirulina 4 and a partially cutaway structural diagram of a metal microcoil 3 in which a metal thin film 5 is formed on spirulina 4.
  • the spirulina 4 that serves as a biotemplate for the metal microcoil 3 is a micro-object that has a filamentary structure (spiral) that draws a helix like a screw thread. This spiral is determined according to the type of spirulina and the growing conditions.
  • the left-handed or right-handed nature of the spiral ("winding direction", handedness or chirality), pitch, natural length of the coil, length of the stretched filamentous part of the coil, total number of turns, and diameter of the spiral can be adjusted to some extent depending on the type of Spirulina and the growing conditions. Details are disclosed in Non-Patent Document 5.
  • the size of this metal microcoil 3 in its axial direction is about 25 ⁇ m to 35 ⁇ m in helical diameter and about 40 ⁇ m to 300 ⁇ m in helical major axis length.
  • many of the individual pieces have an average length of 140 ⁇ m, and in yet another measured example, half of the individual pieces are 190 ⁇ m or more.
  • the individual particles 1 are metal microcoils 3, they show a characteristic response due to the electrical conductivity of the metal. That is, when the incident THz wave acts on the metal microcoil 3, the metal microcoil 3 acts as a receiving antenna, and a current that oscillates in response to the incident THz wave is induced in itself.
  • the current in the metal microcoil 3 generated by irradiation of the incident THz wave to the metal microcoil 3 is an alternating current with the same frequency as the incident THz wave.
  • this frequency of AC current generally has a very large energy loss in the form of Joule heat due to electrical resistance (“Joule loss”), and this situation is the same for the AC current in the metal microcoil 3.
  • the metal microcoil 3 is configured to be prone to Joule loss among various aspects of the individual particles 1.
  • the metal microcoil 3 when used as a receiving antenna for the individual particles 1, it is highly efficient and broadband compared to using another one, and it also functions as a transmitting antenna that re-radiates THz waves of the same frequency as the incident THz waves while strongly attenuating the incident THz waves as Joule loss. This process of absorption and re-emission is then efficiently repeated by multiple microcoils, resulting in a large contrast in the phase difference and phase randomness (i.e., wavefront disturbance).
  • the re-radiation effect can be explained by corresponding to the direction, i.e. orientation, of the metal microcoil 3.
  • the re-radiated THz waves can be explained by decomposing them into an antenna component of dipole-mode radiation, with the dipole moment oriented in the axial direction of the spiral, and an antenna component of axial-mode radiation in the axial direction of the spiral.
  • Dipole mode radiation like the radiation characteristics of a dipole antenna, shows strong radiation in a planar direction perpendicular to the axis of the spiral.
  • axial mode radiation shows strong radiation in the axial direction of the spiral.
  • the winding direction of the spiral also mainly affects the optical rotation in axial mode radiation.
  • the intensity of the THz waves re-radiated from the incident THz waves differs between right-handed and left-handed circularly polarized light. Note that while the radiation characteristics as a transmitting antenna have been explained with a focus on the re-radiation effect, these radiation characteristics also correspond to the response effect to incident THz waves, that is, the sensitivity (directivity) for each direction of reception when operating as a receiving antenna.
  • the response of each individual particle 1 to an incident THz wave can have anisotropy depending on the orientation of the metal microcoil 3.
  • This anisotropy is the anisotropy of dipole mode radiation and axial mode radiation for an incident THz wave of a single frequency. Since the radiation distributions of dipole mode radiation and axial mode radiation are different, anisotropy occurs in the intensity distribution. Dipole mode radiation and axial mode radiation are described in detail in Non-Patent Document 6.
  • Dispersion The particulate dispersoid 10 of the present disclosure is dispersed and supported in a dispersion medium 2 as shown in FIG. 1.
  • the dispersion mode (dispersibility) of the particulate dispersoid 10 can be set in various ways, from a degree where the position distribution of the dispersed individual particles 1 is scattered in the dispersion medium 2 with at least some randomness and some bias, to a degree where the scattering is random but unbiased and highly uniform.
  • the directional distribution of the orientation of the dispersed individual particles 1 can be set in various ways, from a degree where some directional dependency remains, to a degree where no directional dependency is found and the distribution of the position and orientation of the particulate dispersoid 10 in the dispersion medium 2 depends on how the particulate dispersoid 10 is mixed into the dispersion medium 2, and further depends on the material of the dispersion medium 2, the fluidity of the dispersion medium 2, and the solidification treatment method.
  • the positional range (dispersion range) in which the individual particles 1 of the particulate dispersoid 10 are arranged is preferably determined in relation to the wavelength ⁇ of the incident THz wave. If the particulate dispersoid 10 is arranged so that the dispersion range is associated with the wavelength ⁇ along the incident direction of the incident THz wave, it is useful that the phase of the re-radiated THz wave has a phase difference from that of the incident THz wave due to repeated absorption and re-radiation. Specifically, it is preferable that the dispersion range is equal to or greater than the wavelength ⁇ , and more preferably equal to or greater than about 2 ⁇ .
  • the dispersion range is equal to or greater than 1 mm, and more preferably equal to or greater than 2 mm.
  • this dispersion range can be determined by the thickness d when the incident THz wave is propagated in the z direction.
  • the concentration of the particulate dispersoid is appropriately set.
  • the concentration can be determined by using the number of particles of the particulate dispersoid 10, for example, by defining the number of particles per volume of the THz wave diffuser 100. Instead of the number of particles, the concentration can also be defined by other indicators such as the weight of the particulate dispersoid 10 per unit volume of the THz wave diffuser 100 or the optical density in the THz wave diffuser 100. To specifically determine the concentration, the relationship with the incident THz wave that is scattered, reflected, or absorbed by the particulate dispersoid 10 is taken into consideration.
  • the intensity of the incident THz wave propagating through the THz wave diffuser 100 attenuates as it propagates, and the degree of attenuation is related to the concentration.
  • the length measured from the incident surface to the position where the intensity at the time of incidence into the THz wave diffuser 100 is 1/e (where e is the base of the natural logarithm (Euler's number or Napier's number)) can be defined as the penetration length.
  • e is the base of the natural logarithm (Euler's number or Napier's number)
  • the concentration is high, the incident THz wave attenuates over a shorter distance, so the penetration length is small.
  • the degree of dispersion (dispersibility) of the THz wave diffuser also relates to the characteristics.
  • the attenuation of the incident THz wave in the THz wave diffuser of this embodiment is caused not only by absorption, in which energy is converted into heat, but also by re-radiation. If the incident THz wave attenuates rapidly over a short distance, re-radiation will occur within that short distance. In that case, the phase will be re-radiated without being disturbed much, and the phase disturbance effect may be weak.
  • phase disturbance will be difficult to occur.
  • the concentration of the particulate dispersoid 10 is a value smaller than the concentration at which the penetration length of the incident THz wave in the THz wave diffuser 100 is equal to or greater than the wavelength of the incident THz wave, and it is even more preferable that the concentration is equal to or greater than twice the wavelength of the incident THz wave.
  • the degree of dispersion of the THz wave diffuser is distributed over a wider range than that of the THz wave diffuser being concentrated in one area.
  • phase Disturbance Effect The phase disturbance effect of this embodiment will be described.
  • Figures 4A and 4B are explanatory diagrams for explaining the action of the phase disturbance effect, with Figure 4A showing the action during transmission and Figure 4B showing the action during reflection.
  • Each figure shows a cross section of a THz wave diffuser 100 having a thickness in the z direction, and each particle of the particulate dispersoid 10 in the cross section is shown diagrammatically.
  • the main factor is the phase difference that occurs at individual particles 1 due to repeated multiple incidences and re-emissions, and if a phase difference occurs between the incident THz wave and the re-emitted THz wave at an individual particle 1, this also plays a secondary role, disrupting the phase of the transmitted THz wave.
  • the transmitted THz wave contains not only the incident THz wave itself that is transmitted, but also the re-radiated THz wave component that is re-radiated by another individual particle 1.
  • the THz wave that transmits through the THz wave diffuser 100 is a superposition of THz waves, such as the incident THz wave attenuated by the receiving action of the individual particle 1, the THz wave that is absorbed once by the individual particle 1 and re-radiated (i.e., has interacted only once), the THz wave that has interacted twice with the individual particle 1, and so on.
  • THz waves that have interacted with individual particles 1 the same number of times have phase variations due to differences in the orientation of the individual particles 1, and therefore the THz wave that has interacted multiple times has further phase variations and is disturbed.
  • FIG. 4A shows particles 1A, 1B, and 1C.
  • an incident THz wave Wi which is a linearly polarized plane wave having an electric field in the x direction
  • particle 1A and 1C have a helical axis along the x axis perpendicular to the z direction
  • particle 1B has a helical axis along the z axis.
  • the amplitude of the incident THz wave Wi at a certain time is depicted at the top, including the attenuation state, and for the re-emitted THz waves Wt A to Wt C of particles 1A to 1C, only the portion in the transmission direction is shown by a wavefront.
  • the particles 1A and 1C which are shifted in position in the z direction, receive the incident THz wave at a timing corresponding to the shift, and each re-emits the THz wave.
  • the re-emitted THz waves Wt A and Wt C from the particles 1A and 1C have the same phase as each other in the components heading in the +z direction.
  • the re-emitted THz waves Wt A and Wt C have a phase difference due to the mechanism of interaction (reception, re-emission), but the shift in the positions of the particles 1A and 1C cancels the incident timing and emission timing.
  • the re-emitted THz wave Wt B from the particle 1B also has a phase difference with the re-emitted THz waves Wt A and Wt C from the particles 1A and 1C.
  • the incident THz wave Wi weakens its intensity as it propagates in the z direction in the THz wave diffuser 100 due to the interaction with each particle 1.
  • the THz wave diffuser 100 exerts a phase disturbance effect even when used in a manner that transmits THz waves.
  • the reason that no phase difference occurs in the re-radiated THz waves for particles 1A and 1C is because it is assumed that the re-radiated THz waves are directed forward in the direction of the incident THz wave (z direction), and furthermore, the orientation of particles 1A and 1C is the same in relation to the polarization and incident direction. Since re-radiated THz waves generally have a directional distribution, and the orientation of individual particles is distributed such that there are almost no particles with the same orientation, it is possible to obtain a sufficient phase disturbance effect even when the THz wave diffuser 100 is used in a transmitted manner.
  • FIG. 4B shows the incident THz wave Wi shown by the amplitude of the time at the top, and the transmission direction of the re-emitted THz waves Wr A to Wr C of the particles 1A to 1C in the wavefront.
  • the particles 1A and 1C which are at different positions in the z direction, did not produce a phase difference in the transmission in the +z direction, but when reflected in the -z direction, a phase difference occurs between the re-emitted THz waves Wr A and Wr C due to the shift in the z direction positions of the particles 1A and 1C themselves. This is due to both the shift in the timing at which the incident THz wave Wi reaches the particles 1A and 1C, and the shift in the emission position when the re-emitted THz waves Wr A and Wr C propagate from the particles 1A and 1C in the -z direction.
  • the re-radiated THz waves Wr A and Wr C have a phase difference due to the mechanism of interaction (reception, re-radiation) with the incident THz wave Wi, and the re-radiated THz wave Wr B in the particle 1B has a phase difference with the re-radiated THz waves Wr A and Wr C from the particles 1A and 1C due to the different orientation from the particles 1A and 1C in the particle 1B. It is also the same that the intensity of the incident THz wave Wi is weakened as it propagates in the z direction in the THz wave diffuser 100.
  • the re-radiated THz wave shows an intensity according to the orientation of each particle, and a multiple disturbance effect occurs.
  • the THz wave diffuser 100 is used in a reflection arrangement, unlike transmission, the incident THz wave attenuated by the reception action of each particle 1 is not directly reflected and does not need to be considered.
  • the THz waves reflected by THz wave diffuser 100 are a superposition of THz waves, such as a THz wave that has been absorbed once by an individual particle 1 and re-emitted (interacted only once), a THz wave that has interacted twice with an individual particle 1, and so on.
  • the THz wave diffuser 100 exerts a phase disruption effect even when used to reflect THz waves.
  • the THz wave diffuser of this embodiment can achieve phase disturbance in various directions.
  • the orientation of the individual particles 1 can also be oriented in any direction in three dimensions, thereby enabling phase disturbance by the individual particles 1.
  • the phase disturbance effect as described above occurs, and at the same time, conversion to Joule heat occurs in the individual particles 1, so the THz wave diffuser of this embodiment can also act as an absorber.
  • FIG. 5 is a flow chart showing a typical method for manufacturing the THz wave diffuser 100 of this embodiment.
  • a coil-shaped micro object is formed (S02).
  • spirulina is grown to have a desired shape.
  • a metal microcoil is formed from the coil-shaped micro object (S04).
  • a metal layer is formed on the surface of the coil-shaped micro object.
  • electroless plating can be adopted.
  • the particulate dispersoid 10 is manufactured.
  • Non-Patent Document 5 details a specific method for growing spirulina to have a desired shape and a method for forming a metal layer on the surface of the grown spirulina.
  • the particulate dispersoid 10 is dispersed in the dispersion medium 2 or a precursor of the dispersion medium 2 (S06), and the dispersion state is fixed (S08).
  • the dispersion medium is a thermoplastic resin
  • the thermoplastic resin that has been heated to exhibit fluidity becomes a precursor of the dispersion medium, so that the particulate dispersoid 10 is mixed and dispersed therein, and then cooled to a temperature at which the resin loses its fluidity, whereby dispersion and fixation can be realized.
  • the specific method of dispersion and fixation can be determined depending on the properties of the dispersion medium.
  • any means or method for enhancing dispersibility can be adopted, such as chemically modifying the surface of the material of the particulate dispersoid 10 or adding a dispersant for enhancing dispersibility, as necessary.
  • the degree of dispersibility in the THz wave diffuser of this embodiment is not particularly limited.
  • FIGS. 6A and 6B are schematic diagrams showing an outline of the optical element arrangement of the reflectance measurement system
  • Figure 7A is a graph showing the waveform of an electromagnetic pulse
  • Figure 7B is the spectrum of the electromagnetic pulse calculated by FFT processing.
  • Reflectance can be measured by a method called terahertz time-domain spectroscopy (THz-TDS).
  • THz-TDS terahertz time-domain spectroscopy
  • an electromagnetic pulse having a frequency component in the THz wave region is irradiated.
  • an electromagnetic pulse having a pulse width of about 1 psec is irradiated within a measurement window period of 160.0 psec.
  • the spectrum of the measurement waveform is obtained by FFT (fast Fourier transform) processing of data including the measurement waveform during the measurement window period.
  • the band is 0.1 to 3.5 THz, which covers a part of the THz wave.
  • the dynamic range of the measurement can be secured to about 80 dB.
  • the THz wave irradiator E is an epi-illumination system that illuminates the sample S from above, and the THz wave detector D is arranged, for example, so that the pupil positions of the THz wave irradiator E and the THz wave detector D are approximately confocal.
  • an appropriate half mirror HM is used, and an objective lens L made of a material that transmits THz waves is arranged.
  • FIG. 6A shows a schematic arrangement in which the THz wave from the THz wave irradiator E converges inside the sample S near its upper surface, and the reflected wave from there converges on the THz wave detector D.
  • FIG. 6B is an arrangement for efficiently measuring the reflected signal from inside the sample near the lower surface.
  • the depth of field on the sample S side of the light receiving system including the objective lens L and the THz wave detector D is sufficiently large, and the reflected wave from any position in the depth direction (z direction) of the sample S is incident on the THz wave irradiator E.
  • a delay path (not shown) with a variable optical path length is provided, and by adjusting the optical path length, the reflected component of the THz wave from each position in the depth direction (z direction in the figure) of the sample S can be detected.
  • the metal mirror MM may be placed below the sample S, and serves as a mirror that reflects the THz wave.
  • the metal mirror MM is positioned as necessary to reproduce the state in which the THz wave diffuser 100 is attached to an object that reflects THz waves, such as a metal plate.
  • Figure 7A is a graph showing the voltage waveform of the electromagnetic pulse emitted from the THz wave irradiator E and detected by the THz wave detector D
  • Figure 7B is a graph of the power spectrum obtained from that voltage waveform.
  • the measurement window period (160 psec in one example) is a length of time that can cover the time it takes for the THz wave to travel back and forth through the thickness of the sample.
  • an appropriate filter was applied to the reflected time waveform to improve the visibility of the minute reflected pulse train from the metal microcoil in the sample.
  • Figures 8A-C are external photographs of each sample that was actually produced (Example Sample 1 ( Figure 8A), Example Sample 2 ( Figure 8B), Comparative Example Sample 3 ( Figure 8C)).
  • Figures 9A-C are reflection signals actually measured in the reflection arrangement of Figure 6A for Example Sample 1 ( Figure 9A), Example Sample 2 ( Figure 9B), and Comparative Example Sample 3 ( Figure 9C).
  • Figures 10A-B are reflection spectra actually measured in the reflection arrangement of the samples, and are the reflection spectra obtained from Example Sample 1 ( Figure 10A) and Comparative Example Sample 3 ( Figure 10B).
  • Example Sample 1 of FIG. 8A foamed styrene beads (so-called expanded polystyrene) are used for the dispersion medium 2, and metal microcoils 3 are dispersed in the dispersion medium 2 as particulate dispersoids 10.
  • the metal microcoil 3 of Example Sample 1 is a left-handed spirulina 4 grown to have an axial length of about 100 ⁇ m, on which nickel is formed by electroless plating for the metal thin film 5.
  • the concentration of the particulate dispersoid 10 is about 0.51 w/v%, and the thickness d is 20 mm.
  • Example Sample 8B uses the same conditions as Example Sample 1, but uses copper formed by electroless plating for the metal thin film 5 of the metal microcoil 3, and the concentration of the particulate dispersoid 10 is 0.25 w/v% or less, and the thickness d is 15 mm.
  • Comparative example sample 3 in Figure 8C is a 0.6 cm thick Eccosorb AN-72 sheet (manufactured by Laird Corporation), a standard absorber and low reflector in the conventional terahertz band.
  • FIG. 9A-C show the reflection amplitude signals in the reflection arrangement actually measured without placing the metal mirror MM in the arrangement of FIG. 6A.
  • the horizontal axis is the delay time (unit: psec) corresponding to the position in the thickness direction of the sample (the vertical direction on the paper in FIG. 6A and B), and is shown in the range of the measurement window period (160 psec).
  • reflection measurement was performed in an arrangement focused on the incident surface of each sample as shown in FIG. 6A.
  • the vertical axis of each figure shows the output voltage value of the THz wave detector D, and the voltage value is shown in arbitrary units. However, the units are maintained so that the same value shows the same voltage value between the two curves in each figure and between FIG. 9A-C.
  • the small value of the delay time corresponds to the top side of each sample in FIG. 6A, and the range of the delay time corresponding to the positional range inside each sample is shown by the double-headed arrow.
  • the black solid line in each figure is the background signal measured without placing a sample, and the curve with the diagonal line pattern overlaid is the one with each sample placed.
  • the curves with diagonal lines overlap mostly with the solid black line for delay times outside the range of the double-headed arrows, i.e., outside the sample. This shows that when the metal mirror MM is not placed, no reflection occurs from that position, including below the sample.
  • values that deviate from the solid black line are the actual reflected signals, and significant values are distributed within the range of the double-headed arrows for all samples.
  • Example Sample 1 in Figure 9A of the delay times corresponding to the inside of the sample indicated by the double-headed arrow, the reflected signal was concentrated in the range of 5 psec to 50 psec, that is, the delay times corresponding to the vicinity of the incident surface, and from 50 psec to 135 psec, the reflected signal was very weak despite being inside the sample. Also, when compared with the measured value (not shown) in which a metal mirror MM was placed, the reflected signal itself did not differ significantly at any of the delay times. For this reason, it is believed that in Example Sample 1, the incident THz wave was well absorbed within a short distance from the incident surface, and did not reach the rear surface of the sample (above or below the paper in Figures 6A and B).
  • Example Sample 2 in Figure 9B the reflected signal is distributed over a range of 10 psec to 140 psec, out of the delay times corresponding to the inside of the sample indicated by the double-headed arrow, that is, delay times corresponding to the entire region from the incident surface to the back surface of the sample. Also, in the measured value (not shown) in which the metal mirror MM was placed, the reflected signal became large at positions exceeding 140 psec. For this reason, it is believed that in Example Sample 2, relatively weak absorption was achieved throughout the entire thickness of the sample, and the incident THz wave reached the back surface of the sample.
  • Comparative Example Sample 3 in FIG. 9C a strong reflected signal is generated at a delay time of 70 psec to 90 psec, which corresponds to a very narrow range inside the sample from the incident surface, among the delay times of 70 psec to 140 psec corresponding to the inside of the sample indicated by the double-headed arrow.
  • no reflected signal is observed at a position exceeding 140 psec in the measured value (not shown) in which the metal mirror MM is placed. From these results, it can be said that in Comparative Example Sample 3, the incident THz wave is attenuated before reaching the back surface of the sample, but is reflected at a shallow position from the incident surface.
  • Comparative Example Sample 3 the attenuation itself can be said to be sufficient, but the reflectivity is relatively high.
  • the reflectivity is high in a narrow range in the thickness direction, and the waveform of the reflected signal also strongly reflects the irradiated pulse waveform in FIG. 7A. Focusing only on the reflected signal, it is stronger in Comparative Example Sample 3 than in Example Samples 1 and 2, and the phase appearing in the pulse waveform is preserved when it is reflected. From these results, the inventors believe that Comparative Example Sample 3 has a weak effect of disturbing the phase of the incident THz wave. Note that while the measurement results using the arrangement in Figure 6A have been explained, the measurement results using the arrangement in Figure 6B, in which the wave is focused on the rear surface of the sample, also showed no significant difference.
  • Figures 10A-B show reflection spectra in the reflection arrangement actually measured, obtained from Example Sample 1 ( Figure 10A) and Comparative Example Sample 3 ( Figure 10B).
  • the horizontal axis of each figure is frequency (unit: THz).
  • the black solid line is the reflection spectrum of the reflected signal itself in the measured value in which no reference signal, i.e. no sample, is placed, and only the metal mirror MM as in Figure 7A is placed as a reflector.
  • the curves with diagonal lines are the reflection spectrum obtained from the reflected signal of each sample. Since no sample is placed in the black solid line, the drop from the black solid line to the curve with diagonal lines reflects the contribution of reflection by the sample.
  • Example Sample 3 shown in Figure 10B for example, at 0.3 THz (300 GHz), only a little less than 1/100 (-20 dB) is reflected. In contrast, at the same 0.3 THz, reflection is suppressed to 1/1000 (-30 dB) in Example Sample 1 shown in Figure 10A. Although not shown, a reflection spectrum similar to that of Example Sample 1 was measured for Example Sample 2. Comparing Figures 10A and 10B, it was confirmed that the THz wave diffuser 100 of this embodiment is a low reflector that surpasses conventional absorbers in the relatively low frequency range of THz waves, with an upper limit of approximately 0.7 THz. This low reflectivity, combined with the phase disturbance effect described above, demonstrates the superiority of the THz wave diffuser 100 of this embodiment in phase-sensitive applications of THz waves.
  • the THz wave diffuser of this embodiment achieves a phase-disturbing effect and exhibits properties suitable for phase-sensitive applications.
  • Anisotropy is not necessarily achieved only when metal microcoils 3 are used for the particulate dispersoid 10, but can also be achieved when the individual particles 1 of the particulate dispersoid 10 have different materials and microstructures.
  • a microcoil in which the individual particles are made of only conductive metal is conceivable.
  • current metal processing technology has not yet achieved the fabrication of a microcoil shape of a similar size.
  • Metal microcoils are in practical use as so-called spiral antennas, which are broadband and compact antennas, and are used in mobile phone antennas, etc.
  • THz wave diffuser 10 Particulate dispersoid 1, 1A, 1B, 1C Individual particle (of particulate dispersoid) 2 Dispersion medium 3 Metal microcoil 4 Spirulina 5 Metal thin film D THz wave detector E THz wave irradiator HM Half mirror L Objective lens MM Metal mirror S Sample

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Abstract

This invention disrupts a phase of an incident THz wave. An embodiment of the present disclosure provides a terahertz wave diffuser 100 comprising a dispersion medium 2 and a particulate dispersoid 10. The dispersion medium transmits the incident terahertz wave. The particulate dispersoid is made up of particles 1 each comprising a microstructure and a material responding to the incident terahertz wave, and is supported by being dispersed in the dispersion medium. The present disclosure also provides a method for manufacturing the terahertz wave diffuser.

Description

テラヘルツ波拡散体およびその製造方法Terahertz wave diffuser and method for producing same

 本開示はテラヘルツ波拡散体およびその製造方法に関する。さらに詳細には、本開示は入射テラヘルツ波の位相が撹乱されるテラヘルツ波拡散体およびその製造方法に関する。 The present disclosure relates to a terahertz wave diffuser and a method for manufacturing the same. More specifically, the present disclosure relates to a terahertz wave diffuser in which the phase of an incident terahertz wave is disturbed, and a method for manufacturing the same.

 周波数0.1THz~100THz(真空中の波長3μm~3mm)程度の電磁波はテラヘルツ波(以下「THz波」とも記す)とも呼ばれ広範な応用が期待されている。高速通信のための第5世代通信方式以降の世代(以下「Beyond 5G/6G」と呼ぶ)では300GHzを超えTHz波の帯域に至る電磁波の利用も想定されている。例えば非特許文献1には300GHz帯で動作しうるシリコンのCMOS技術を利用した送受信機が開示されている。また非特許文献2には6×6の正方格子となるように配置された能動アンテナアレイをもつ446GHz帯のRTD(共鳴トンネルダイオード)放射源が開示されている。THz波は、通信のみならず検知目的でも活用が期待されている。例えば本願発明者の一部は300GHz帯のTHz波を利用したウォークスルーボディースキャナーを開発している(非特許文献3、4)。 Electromagnetic waves with frequencies of 0.1 THz to 100 THz (wavelength in vacuum of 3 μm to 3 mm) are also called terahertz waves (hereinafter also written as "THz waves") and are expected to have a wide range of applications. In the fifth generation communication system and subsequent generations for high-speed communication (hereinafter referred to as "Beyond 5G/6G"), the use of electromagnetic waves exceeding 300 GHz and reaching the THz wave band is also expected. For example, Non-Patent Document 1 discloses a transceiver that uses silicon CMOS technology and can operate in the 300 GHz band. In addition, Non-Patent Document 2 discloses a 446 GHz band RTD (resonant tunneling diode) radiation source with an active antenna array arranged in a 6 x 6 square lattice. THz waves are expected to be used not only for communication but also for detection purposes. For example, some of the inventors of this application have developed a walk-through body scanner that uses 300 GHz band THz waves (Non-Patent Documents 3 and 4).

 THz波の用途が拡大するにつれ吸収体(低反射体、透過遮蔽部材を含む、以下同様)も利用されつつある。例えばEccosorb(登録商標)AN-72は市場に流通しているTHz波を含む電磁波の典型的な吸収体である。上記ウォークスルーボディースキャナーにおいても同様の吸収体を装置内壁などに採用している。THz波の吸収体は種々の用途に利用され、典型的な用途はノイズを防止するための反射防止や透過防止や干渉防止である。 As the uses of THz waves expand, absorbers (including low reflectors and transparent shielding materials, the same applies below) are also coming into use. For example, Eccosorb (registered trademark) AN-72 is a typical absorber of electromagnetic waves, including THz waves, available on the market. The above-mentioned walk-through body scanner also uses a similar absorber on the inner walls of the device. THz wave absorbers are used for a variety of purposes, with typical uses being anti-reflection, anti-transmission, and anti-interference to prevent noise.

 近時、生物を利用するバイオテンプレート技術も注目を集めている。特許文献1には、螺旋形状を有する植物プランクトンに導電表面層を形成した微小螺旋構造体の群から成りかつ各微小螺旋構造体が電気的若しくは磁気的に連結されて集合体化している左手系電波伝搬媒質層と、右手系電波伝搬媒質の通常層とを積層した構造を有することを特徴とする干渉型電波遮蔽または吸収体が開示されている。特許文献2、特許文献3、および非特許文献5には、大量生産可能な微小螺旋構造体に適した材料として、植物プランクトンを適用する微小螺旋構造体の製造方法および微小螺旋構造体が開示されている。これらの技術は、スピルリナと呼ばれる藻類の形状をテンプレートにして金属の螺旋構造を作製するバイオテンプレート技術の一例である。 Recently, biotemplate technology that uses living organisms has also been attracting attention. Patent Document 1 discloses an interference-type radio wave shielding or absorbing body that is characterized by having a structure in which a left-handed radio wave propagation medium layer, which is made up of a group of micro-helical structures in which a conductive surface layer is formed on phytoplankton having a helical shape and in which the micro-helical structures are electrically or magnetically connected to form an aggregate, and a normal layer of a right-handed radio wave propagation medium are laminated. Patent Document 2, Patent Document 3, and Non-Patent Document 5 disclose a method for manufacturing a micro-helical structure that uses phytoplankton as a material suitable for mass-producible micro-helical structures, and the micro-helical structure itself. These technologies are examples of biotemplate technology that uses the shape of an algae called Spirulina as a template to create a metal helical structure.

特許第5234673号Patent No. 5234673 特許第5274653号Patent No. 5274653 特許第5606572号Patent No. 5606572

M. Fujishima, "Future of 300 GHz band wireless communications and their enabler, CMOS transceiver technologies", Jpn. J. Appl. Phys. 60, SB0803 (2021), DOI: 10.35848/1347-4065/abdf24M. Fujishima, “Future of 300 GHz band wireless communications and their enabler, CMOS transceiver technologies”, Jpn. J. Appl. Phys. 60, SB0803 (2021), DOI: 10.35848/1347-4065/abdf24 Y. Koyama et al., "A High-Power Terahertz Source Over 10 mW at 0.45 THz Using an Active Antenna Array With Integrated Patch Antennas and Resonant-Tunneling Diode", IEEE Trans. THz Sci. Tech. vol. 12, no. 5, pp. 510-519, (2022), DOI: 10.1109/TTHZ.2022.3180492Y. Koyama et al., "A High-Power Terahertz Source Over 10 mW at 0.45 THz Using an Active Antenna Array With Integrated Patch Anten nas and Resonant-Tunneling Diode", IEEE Trans. THz Sci. Tech. vol. 12, no. 5, pp. 510-519, (2022), DOI: 10.1109/TTHZ.2022.3180492 Chiko Otani et al., "Development of 300 GHz walk-through body scanner for the security gate applications", Proc. SPIE 11827, Terahertz Emitters, Receivers, and Applications XII, 118270N (1 August 2021), DOI: 10.1117/12.2594528Chiko Otani et al., “Development of 300 GHz walk-through body scanner for the security gate applications”, Proc. SPIE 11827, Terahertz Emitters, Receivers, and Applications XII, 118270N (1 August 2021), DOI: 10.1117/12.2594528 大谷 知行, "テラヘルツ波センシング・イメージング技術と応用", 表面技術, 2021, 72 巻, 8 号, p. 429-432, DOI: 10.4139/sfj.72.429Tomoyuki Otani, "Terahertz Wave Sensing and Imaging Technology and Applications", Surface Technology, 2021, Vol. 72, No. 8, pp. 429-432, DOI: 10.4139/sfj.72.429 Kamata, K. et al., "Spirulina-Templated Metal Microcoils with Controlled Helical Structures for THz Electromagnetic Responses", Sci Rep 4, 4919 (2014). DOI: 10.1038/srep04919Kamata, K. et al., "Spirulina-Templated Metal Microcoils with Controlled Helical Structures for THz Electromagnetic Responses", Sci Rep 4, 4919 (2014). DOI: 10.1038/srep04919 Notake, T. et al., "Dynamical visualization of anisotropic electromagnetic re-emissions from a single metal micro-helix at THz frequencies", Sci Rep 11, 3310 (2021). DOI: 10.1038/s41598-020-80510-yNotake, T. et al., "Dynamical visualization of anisotropic electromagnetic re-emissions from a sin gle metal micro-helix at THz frequencies", Sci Rep 11, 3310 (2021). DOI: 10.1038/s41598-020-80510-y

 THz波の領域におけるノイズの抑制のための対策の一つは、光学機器において迷光を防ぐために採用される黒色吸光部材のように、反射波や透過波の振幅や強度を抑制できる吸収性の部材(遮蔽性の部材を含む。以下同じ)を使用することである(非特許文献3、4)。しかし、吸収性部材の減衰性能のみに頼る手法は、THz波の領域では必ずしも十分ではない。その一例を、直交位相振幅変調(QAM)をBeyond 5G/6Gで検討されるTHz波のワイヤレス通信技術に採用する場合で説明する。QAMといった位相を利用する通信方式のノイズ対策においても、送信、伝送、受信のいずれかの段階で通信の信号波の意図しないパスでの反射や透過を防ぐことが理想的である。しかし、THz波の領域では良好な吸収性部材が限られており、必ずしも容易ではない。完全に吸収しきれなかった一部の信号波が信号波の位相を保ってしまっていると、位相敏感な用途では強度が弱くても有害性が高いからである。位相敏感な用途では、吸収性部材の減衰性能に特に高い性能が求められるといえる。本開示は、係る課題を解決しうる新規な手法を提供することにより、THz波を活用する多様な手法や多様な製品の性能向上に貢献するものである。 One of the measures to suppress noise in the THz wave region is to use an absorbing material (including a shielding material; the same applies below) that can suppress the amplitude and intensity of reflected and transmitted waves, such as the black light-absorbing material used to prevent stray light in optical equipment (Non-Patent Documents 3 and 4). However, a method that relies only on the attenuation performance of an absorbing material is not necessarily sufficient in the THz wave region. An example of this is the case where quadrature amplitude modulation (QAM) is adopted in the THz wave wireless communication technology considered for Beyond 5G/6G. Even in noise countermeasures for communication methods that use phase such as QAM, it is ideal to prevent reflection or transmission of communication signal waves in unintended paths at either the transmission, transmission, or reception stage. However, there are only a limited number of good absorbing materials in the THz wave region, and this is not necessarily easy. This is because if some signal waves that are not completely absorbed retain the phase of the signal wave, they can be highly harmful in phase-sensitive applications even if their intensity is weak. In phase-sensitive applications, the attenuation performance of the absorbent material is required to be particularly high. This disclosure provides a new method that can solve such problems, thereby contributing to improving the performance of various methods and products that utilize THz waves.

 本発明者は、特許文献1~3に示されるような微細な粒子を採用しつつ、反射THz波のノイズとなる性質を効果的に消失させうることを突きとめ、本開示の発明を完成させた。 The inventor discovered that it is possible to effectively eliminate the noise-causing properties of reflected THz waves while employing fine particles such as those shown in Patent Documents 1 to 3, and thus completed the invention disclosed herein.

 すなわち、本開示のある態様では、入射テラヘルツ波を透過させる分散媒と、該入射テラヘルツ波に対して応答する材質と微細構造とを個別の粒子がもち、前記分散媒中に分散されて支持されている粒子状分散質とを備えているテラヘルツ波拡散体(THz波拡散体)が提供される。 In other words, one aspect of the present disclosure provides a terahertz wave diffuser (THz wave diffuser) that includes a dispersion medium that transmits incident terahertz waves, and a particulate dispersoid that is dispersed and supported in the dispersion medium, with each particle having a material and a microstructure that responds to the incident terahertz waves.

 このようなTHz波拡散体では、入射THz波が、その応答にともなって例えば電流に変換されて吸収されるとともに、入射THz波の一部のエネルギーが再放射THz波に変換される。その再放射THz波は、周囲のTHz波拡散体に再び吸収され、エネルギーを失いながらこの過程が繰り返される。このため、このTHz波拡散体は、入射THz波のエネルギーを減衰させるとともに、拡散によって実効的な光路長が伸びることとなり、入射THz波に対して振幅が減衰されながら位相も撹乱されるため、再放射THz波が入射THz波の持つ位相情報に対してノイズとして悪影響を与えにくくなる。つまり、本開示のTHz波拡散体では、再放射THz波の位相を入射THz波からみて撹乱された位相をもつようにすることにより、吸収とあいまってノイズとしての悪影響を抑制することができるのである。 In such a THz wave diffuser, the incident THz wave is converted into, for example, an electric current and absorbed in response to the wave, and part of the energy of the incident THz wave is converted into a re-radiated THz wave. The re-radiated THz wave is absorbed again by the surrounding THz wave diffuser, and this process is repeated while losing energy. For this reason, this THz wave diffuser attenuates the energy of the incident THz wave, and the effective optical path length is extended by diffusion, and the amplitude of the incident THz wave is attenuated while the phase is also disturbed, so that the re-radiated THz wave is less likely to adversely affect the phase information of the incident THz wave as noise. In other words, in the THz wave diffuser of the present disclosure, the phase of the re-radiated THz wave is disturbed when viewed from the incident THz wave, so that, in addition to absorption, the adverse effect of noise can be suppressed.

 本出願全般においてTHz波は、周波数0.1THz~100THz(真空中の波長3μm~3mm)程度の周波数範囲の電磁波を指している。また、本出願では、THz波における現象や機能を説明するために、可視光を含む光のための用語を利用することがある。例えば「照明」、「遮光」といった用語でTHz波の放射や遮断を表現することかある。またランダムとは、少しでも規則性が崩されている程度に位置や配向が乱されていることを指している。 Throughout this application, THz waves refer to electromagnetic waves in the frequency range of approximately 0.1 THz to 100 THz (wavelength in a vacuum of 3 μm to 3 mm). This application also uses terms for light, including visible light, to explain phenomena and functions of THz waves. For example, the emission or blocking of THz waves may be expressed using terms such as "illumination" and "shading." Additionally, "random" refers to positions and orientations that are disrupted to the extent that the regularity is broken even slightly.

 本開示のいずれかの態様においては、入射THz波が照射されたとき、それからみて攪乱された位相を持つ再放射THzが得られる拡散体を提供することができる。 In any of the aspects of the present disclosure, a diffuser can be provided that, when irradiated with an incident THz wave, produces re-radiated THz having a disturbed phase.

図1は、本開示の実施形態における典型的なTHz波拡散体の斜視図である。FIG. 1 is a perspective view of an exemplary THz wave diffuser according to an embodiment of the present disclosure. 図2は、本開示の実施形態における粒子状分散質をなす粒子の構造を示す拡大図である。FIG. 2 is an enlarged view showing the structure of particles constituting a particulate dispersoid in an embodiment of the present disclosure. 図3A~3Bは、本開示の実施形態において利用されるスピルリナの構造図(図3A)と、スピルリナに金属薄膜を形成した金属マイクロコイルの一部破断構造図(図3B)である。3A and 3B are a structural diagram of spirulina used in an embodiment of the present disclosure (FIG. 3A) and a partially cutaway structural diagram of a metal microcoil in which a metal thin film is formed on spirulina (FIG. 3B). 図4A~Bは、本開示の実施形態における位相攪乱効果の作用を説明する説明図であり、図4Aは透過時の効果を、図4Bは反射時の効果を示している。4A and 4B are explanatory diagrams illustrating the operation of the phase disturbance effect in an embodiment of the present disclosure, with FIG. 4A showing the effect upon transmission and FIG. 4B showing the effect upon reflection. 図5は、本開示の実施形態におけるTHz波拡散体を製造する典型的な方法を示すフローチャートである。FIG. 5 is a flow chart illustrating an exemplary method of manufacturing a THz wave diffuser in accordance with an embodiment of the present disclosure. 図6A~Bは、本開示の実施形態における反射率測定系の光学素子配置の概要を示す模式図である。6A and 6B are schematic diagrams showing an overview of the optical element arrangement of a reflectance measurement system in an embodiment of the present disclosure. 図7Aは、THz波照射器から放射される電磁パルスをTHz波検出器で検出した電圧波形を示すグラフであり、図7Bは、その電圧波形から得られるパワースペクトルのグラフである。FIG. 7A is a graph showing a voltage waveform obtained by detecting an electromagnetic pulse emitted from a THz wave irradiator using a THz wave detector, and FIG. 7B is a graph showing a power spectrum obtained from the voltage waveform. 図8A~Cは、本開示の実施形態において実際に作製した各サンプル(実施例サンプル1(図8A)、実施例サンプル2(図8B))および比較例サンプル3(図8C)の外観写真である。8A to 8C are photographs showing the appearance of each sample actually produced in the embodiment of the present disclosure (Example sample 1 (FIG. 8A), Example sample 2 (FIG. 8B)) and Comparative example sample 3 (FIG. 8C). 図9A~Cは、本開示の実施形態において図6Aの配置により実際に測定された反射配置における反射信号で、実施例サンプル1(図9A)、実施例サンプル2(図9B)、比較例サンプル3(図9C)のものである。9A-C show reflected signals in a reflection arrangement actually measured using the arrangement of FIG. 6A in an embodiment of the present disclosure, for example sample 1 (FIG. 9A), example sample 2 (FIG. 9B), and comparative example sample 3 (FIG. 9C). 図10A~Bは、本開示の実施形態におけるサンプルにおいて測定された反射配置における反射スペクトルで、実施例サンプル1(図10A)、比較例サンプル3(図10B)のそれぞれから得られた反射スペクトルである。10A and 10B show reflectance spectra measured in a reflection configuration for samples according to an embodiment of the present disclosure, and are the reflectance spectra obtained from Example Sample 1 (FIG. 10A) and Comparative Example Sample 3 (FIG. 10B), respectively.

 以下、図面を参照して本開示に係る拡散体の実施形態を説明する。当該説明に際し特に言及がない限り、共通する部分または要素には共通する参照符号が付されている。また、図中、各実施形態の要素のそれぞれは、必ずしも互いの縮尺比を保って示されてはいない。 Below, an embodiment of a diffuser according to the present disclosure will be described with reference to the drawings. Unless otherwise specified in the description, common parts or elements are given common reference symbols. Furthermore, in the drawings, the elements of each embodiment are not necessarily shown to scale.

1.概要
 本実施形態において提供されるTHz波拡散体は、分散媒と粒子状分散質とを備えている。図1は、本実施形態の典型的なTHz波拡散体100の斜視図である。THz波拡散体100には、外部の空間からTHz波(図1には図示しない)が入射する。このTHz波を、以下「入射THz波」と呼ぶ。分散媒2は、入射THz波がTHz波拡散体100を通過する際に強い作用を示さない。つまり、分散媒2は入射THz波をわずかに減衰させたり、屈折させたりする程度の作用を示すのみであり、透過を許容する。これに対し、粒子状分散質10は入射THz波に対して電磁的に応答する。この応答性を獲得するために、入射THz波に対して応答するような材質と微細構造とをもつように粒子状分散質10を構成する個別の粒子1が作製されている。分散媒2の典型例は、発泡スチロール、ウレタン樹脂といった絶縁材料である。
1. Overview The THz wave diffuser provided in this embodiment includes a dispersion medium and a particulate dispersoid. FIG. 1 is a perspective view of a typical THz wave diffuser 100 of this embodiment. THz waves (not shown in FIG. 1) are incident on the THz wave diffuser 100 from an external space. These THz waves are hereinafter referred to as "incident THz waves." The dispersion medium 2 does not have a strong effect when the incident THz waves pass through the THz wave diffuser 100. In other words, the dispersion medium 2 only acts to slightly attenuate or refract the incident THz waves, and allows them to pass through. In contrast, the particulate dispersoid 10 responds electromagnetically to the incident THz waves. In order to obtain this responsiveness, the individual particles 1 constituting the particulate dispersoid 10 are manufactured so as to have a material and a fine structure that respond to the incident THz waves. Typical examples of the dispersion medium 2 are insulating materials such as polystyrene foam and urethane resin.

2.粒子状分散質
 本開示の粒子状分散質10は、入射THz波に対して電磁的に応答する材質と微細構造とをもつような個別の粒子1の集合体である。図2は、粒子状分散質をなす個別の粒子1の構造を示す拡大図である。個別の粒子1の典型が金属マイクロコイル3であり、そのような金属マイクロコイル3は、好ましくは、スピルリナ4の表面に金属(ニッケルや銅など)を無電解めっき等の任意の手法によって成膜したものである。図3A~Bは、それぞれ、スピルリナ4の構造図と、スピルリナ4に金属薄膜5を形成した金属マイクロコイル3の一部破断構造図である。金属マイクロコイル3のバイオテンプレートとなるスピルリナ4は、それ自体がネジ山のようなヘリックスを描く線条構造(螺旋)をもつ微小物体である。この螺旋は、スピルリナの種類や生育条件に応じて決定される。つまり、螺旋の左巻きまたは右巻きのどちらか(「巻き方向」、handednessまたはchirality)や、ピッチ、コイルの自然長、コイルの線条部を引き延ばした長さ、全巻き数、螺旋の描く径がスピルリナの種類や生育条件によりある程度調整できる。その詳細は非特許文献5に開示されている。
2. Particulate Dispersoid The particulate dispersoid 10 of the present disclosure is an aggregate of individual particles 1 having a material and a microstructure that electromagnetically responds to incident THz waves. FIG. 2 is an enlarged view showing the structure of an individual particle 1 that constitutes the particulate dispersoid. A typical example of the individual particle 1 is a metal microcoil 3, and such a metal microcoil 3 is preferably formed by forming a film of a metal (nickel, copper, etc.) on the surface of spirulina 4 by any method such as electroless plating. FIGS. 3A and 3B are respectively a structural diagram of spirulina 4 and a partially cutaway structural diagram of a metal microcoil 3 in which a metal thin film 5 is formed on spirulina 4. The spirulina 4 that serves as a biotemplate for the metal microcoil 3 is a micro-object that has a filamentary structure (spiral) that draws a helix like a screw thread. This spiral is determined according to the type of spirulina and the growing conditions. In other words, the left-handed or right-handed nature of the spiral ("winding direction", handedness or chirality), pitch, natural length of the coil, length of the stretched filamentous part of the coil, total number of turns, and diameter of the spiral can be adjusted to some extent depending on the type of Spirulina and the growing conditions. Details are disclosed in Non-Patent Document 5.

 この金属マイクロコイル3は、その軸方向(図2において紙面上左右方向)のサイズが、スピルリナ4を微小物体とする一つの典型例ではらせん直径が25μm~35μm程度、らせん長軸の長さが40μm~300μm程度であり、別の実測例の一つでは、平均長が140μmの個体が多く、実測例のさらに別のものでは190μm以上が半数を占める。本開示の粒子状分散質10をなす個別の粒子1に入射THz波の振動する電磁場が作用すると、個別の粒子1は入射THz波と同じ周波数で電磁的に応答する。特に、個別の粒子1が金属マイクロコイル3である場合は、金属の導電性のために特徴的な応答を示す。すなわち、入射THz波が作用すると、金属マイクロコイル3は、受信アンテナとして作用して、入射THz波に応じて振動する電流がそれ自体に誘起される。金属マイクロコイル3への入射THz波の照射により生じた金属マイクロコイル3内の電流は、入射THz波と同じ周波数の交流電流である。ところが、この周波数の交流電流は、一般に電気抵抗によるジュール熱の形態でのエネルギー損失(「ジュール損失」)が非常に大きく、この事情は金属マイクロコイル3内の交流電流でも同様である。加えて、金属マイクロコイル3の形状に起因する特有な現象も生じうる。粒子状分散質10をなす個別の粒子1として、金属マイクロコイル3に代えて、同様のサイズの微細な金属棒のような拡散体を採用したとしても、その拡散体は散乱を生じる。しかし、金属マイクロコイル3では、同様のサイズ長の微細な金属棒にくらべて広帯域かつ高効率であり、かつ、交流電流が流れるパスの長さが長いため、ジュール損失が強くなると考えられる。つまり、金属マイクロコイル3は、個別の粒子1の種々の態様のうち、ジュール損失を生じやすい構成となっている。また、受信アンテナとして個別の粒子1のために金属マイクロコイル3を採用すると、別のものを採用するのに比べ、高効率で広帯域であり、入射THz波をジュール損失として強く減衰させつつ、入射THz波と同じ周波数のTHz波を再放射するような送信アンテナとしても機能する。そして、このような吸収と再放射の過程が複数のマイクロコイルによって効率よく繰り返されることで位相差のコントラストの大きさと位相のランダム性(つまり、波面の乱れ)を生じる。 In a typical example in which spirulina 4 is used as a micro-object, the size of this metal microcoil 3 in its axial direction (left-right direction on the paper in FIG. 2) is about 25 μm to 35 μm in helical diameter and about 40 μm to 300 μm in helical major axis length. In another measured example, many of the individual pieces have an average length of 140 μm, and in yet another measured example, half of the individual pieces are 190 μm or more. When the electromagnetic field of the incident THz wave acts on the individual particles 1 constituting the particulate dispersoid 10 of the present disclosure, the individual particles 1 respond electromagnetically at the same frequency as the incident THz wave. In particular, when the individual particles 1 are metal microcoils 3, they show a characteristic response due to the electrical conductivity of the metal. That is, when the incident THz wave acts on the metal microcoil 3, the metal microcoil 3 acts as a receiving antenna, and a current that oscillates in response to the incident THz wave is induced in itself. The current in the metal microcoil 3 generated by irradiation of the incident THz wave to the metal microcoil 3 is an alternating current with the same frequency as the incident THz wave. However, this frequency of AC current generally has a very large energy loss in the form of Joule heat due to electrical resistance ("Joule loss"), and this situation is the same for the AC current in the metal microcoil 3. In addition, a unique phenomenon due to the shape of the metal microcoil 3 may also occur. Even if a diffuser such as a fine metal rod of a similar size is used instead of the metal microcoil 3 as the individual particles 1 constituting the particulate dispersoid 10, the diffuser will cause scattering. However, the metal microcoil 3 is broadband and highly efficient compared to a fine metal rod of a similar size and length, and the length of the path through which the AC current flows is long, so it is thought that the Joule loss will be strong. In other words, the metal microcoil 3 is configured to be prone to Joule loss among various aspects of the individual particles 1. In addition, when the metal microcoil 3 is used as a receiving antenna for the individual particles 1, it is highly efficient and broadband compared to using another one, and it also functions as a transmitting antenna that re-radiates THz waves of the same frequency as the incident THz waves while strongly attenuating the incident THz waves as Joule loss. This process of absorption and re-emission is then efficiently repeated by multiple microcoils, resulting in a large contrast in the phase difference and phase randomness (i.e., wavefront disturbance).

 再放射作用は、金属マイクロコイル3の向きすなわち配向に対応させて説明される。再放射されるTHz波は、螺旋の軸方向を双極子モーメントの方向とするダイポールモード(dipole-mode)放射のアンテナとしての成分と、その螺旋の軸方向に向かう軸モード(axial-mode)放射のアンテナとしての成分とに分解して説明することができる。 The re-radiation effect can be explained by corresponding to the direction, i.e. orientation, of the metal microcoil 3. The re-radiated THz waves can be explained by decomposing them into an antenna component of dipole-mode radiation, with the dipole moment oriented in the axial direction of the spiral, and an antenna component of axial-mode radiation in the axial direction of the spiral.

 ダイポールモード放射では、ダイポールアンテナの放射特性と同様に、螺旋の軸に直交する平面方向に強い放射を示す。これに対し軸モード放射では、螺旋の軸方向に強い放射を示す。螺旋の巻き方向は、主に軸モード放射における旋光性にも影響する。つまり、入射THz波から再放射されるTHz波の強度が、右円偏光と左円偏光とで異なる。なお、再放射作用に着目して送信アンテナとしての放射特性を説明したが、この放射特性は、入射THz波に対する応答作用つまり受信アンテナとして動作するときの受信の方向別の感度(指向性)とも対応している。 Dipole mode radiation, like the radiation characteristics of a dipole antenna, shows strong radiation in a planar direction perpendicular to the axis of the spiral. In contrast, axial mode radiation shows strong radiation in the axial direction of the spiral. The winding direction of the spiral also mainly affects the optical rotation in axial mode radiation. In other words, the intensity of the THz waves re-radiated from the incident THz waves differs between right-handed and left-handed circularly polarized light. Note that while the radiation characteristics as a transmitting antenna have been explained with a focus on the re-radiation effect, these radiation characteristics also correspond to the response effect to incident THz waves, that is, the sensitivity (directivity) for each direction of reception when operating as a receiving antenna.

 粒子状分散質10のために金属マイクロコイル3を採用すると、個別の粒子1は、入射THz波に対する応答が金属マイクロコイル3の配向に依存して異方性を持ちうる。この異方性は、単一の周波数の入射THz波に対してダイポールモード放射と軸モード放射との異方性である。ダイポールモード放射と軸モード放射とでは放射分布が異なっているため、強度分布に異方性が生じる。ダイポールモード放射と軸モード放射については、非特許文献6に詳述されている。 When a metal microcoil 3 is used for the particulate dispersoid 10, the response of each individual particle 1 to an incident THz wave can have anisotropy depending on the orientation of the metal microcoil 3. This anisotropy is the anisotropy of dipole mode radiation and axial mode radiation for an incident THz wave of a single frequency. Since the radiation distributions of dipole mode radiation and axial mode radiation are different, anisotropy occurs in the intensity distribution. Dipole mode radiation and axial mode radiation are described in detail in Non-Patent Document 6.

3.分散
 本開示の粒子状分散質10は、図1に示すように分散媒2に分散されて支持されている。粒子状分散質10の分散の態様(分散性)は、分散している個別の粒子1が示す位置分布が分散媒2中に少なくともある程度のランダムさを伴いつつ偏りも残して散らばっている程度から、ランダムでありながら偏りなく高い均一性を持つ散らばりの程度まで、さまざまに設定することができる。また、分散している個別の粒子1の配向が示す方向分布も、ある程度の方向依存性を残している程度から、方向依存性が見出せない高い等方性を示す程度のものまでさまざまに設定することができる。分散媒2中における粒子状分散質10の位置や配向の分布は、粒子状分散質10を分散媒2にどのように混入させるかに依存し、さらに、分散媒2の材質、分散媒2の流動性や固化処理方法にも依存する。
3. Dispersion The particulate dispersoid 10 of the present disclosure is dispersed and supported in a dispersion medium 2 as shown in FIG. 1. The dispersion mode (dispersibility) of the particulate dispersoid 10 can be set in various ways, from a degree where the position distribution of the dispersed individual particles 1 is scattered in the dispersion medium 2 with at least some randomness and some bias, to a degree where the scattering is random but unbiased and highly uniform. In addition, the directional distribution of the orientation of the dispersed individual particles 1 can be set in various ways, from a degree where some directional dependency remains, to a degree where no directional dependency is found and the distribution of the position and orientation of the particulate dispersoid 10 in the dispersion medium 2 depends on how the particulate dispersoid 10 is mixed into the dispersion medium 2, and further depends on the material of the dispersion medium 2, the fluidity of the dispersion medium 2, and the solidification treatment method.

 粒子状分散質10の個別の粒子1が配置される位置的な範囲(分散範囲)は、入射THz波の波長λとの関連で決定されると好ましい。入射THz波の入射方向に沿って波長λと関連付けた分散範囲となるように粒子状分散質10が配置されていれば、吸収と再放射が繰り返されることにより、再放射THz波の位相が入射THz波のものから位相差をもっていることが役立つのである。具体的には、分散範囲が波長λ以上となるようになっていれば好ましく、2λ程度以上となっていればさらに好ましい。例えば、周波数300GHz(0.3THz)のTHz波の波長λは真空中で1mmであるため、分散範囲が1mm以上となるようになっていれば好ましく、分散範囲が2mm以上となるようになっていればさらに好ましい。この分散範囲は、図1のTHz波拡散体100では、z方向に入射THz波を進行させる場合において、厚みdにより決定することができる。 The positional range (dispersion range) in which the individual particles 1 of the particulate dispersoid 10 are arranged is preferably determined in relation to the wavelength λ of the incident THz wave. If the particulate dispersoid 10 is arranged so that the dispersion range is associated with the wavelength λ along the incident direction of the incident THz wave, it is useful that the phase of the re-radiated THz wave has a phase difference from that of the incident THz wave due to repeated absorption and re-radiation. Specifically, it is preferable that the dispersion range is equal to or greater than the wavelength λ, and more preferably equal to or greater than about 2λ. For example, since the wavelength λ of a THz wave with a frequency of 300 GHz (0.3 THz) is 1 mm in a vacuum, it is preferable that the dispersion range is equal to or greater than 1 mm, and more preferably equal to or greater than 2 mm. In the THz wave diffuser 100 of FIG. 1, this dispersion range can be determined by the thickness d when the incident THz wave is propagated in the z direction.

 本開示のTHz波拡散体100では、粒子状分散質の濃度が適切に設定されていることが好ましい。濃度は、粒子状分散質10の粒子数を用いて、例えばTHz波拡散体100の体積当たりの粒子数といった定義で決定されうる。粒子数に代え、THz波拡散体100の単位体積当たりの粒子状分散質10の重量や、THz波拡散体100における光学濃度といった他の指標で濃度を定義することもできる。濃度を具体的に決定するには、粒子状分散質10が散乱したり反射したり吸収したりする入射THz波との関連が考慮される。THz波拡散体100中を伝播する入射THz波は、その強度を伝播にともなって減衰させてゆき、その減衰の程度が濃度と関連している。THz波拡散体100への入射時の強度の1/e(ただしeは自然対数の底(オイラー数またはネイピア数))となる位置を入射側表面から測定した長さを侵入長と定義できる。濃度が高いと、より短い距離で入射THz波が減衰するため、侵入長は小さくなる。ここで、本実施形態のTHz波拡散体では、濃度を高めすぎることは必ずしも好ましくない。濃度を高めすぎるとTHz波拡散体に侵入直後に入射THz波が減衰することなる。また、これらのことから、同じ濃度であっても一部の箇所にTHz波拡散体が偏って分布する場合にも特性に違いが生じる。したがって、THz波拡散体の分散度合い(分散性)も特性に関わる。本実施形態のTHz波拡散体における入射THz波の減衰は、エネルギーが熱に変換される吸収ばかりではなく、再放射にも起因している。短い距離で急激に入射THz波が減衰すると、その短い距離の範囲で再放射が起きていることになる。その場合、位相はさほど撹乱されずに再放射されていることとなって、位相の攪乱効果は弱くなりかねないからである。逆に、濃度を適度に小さくして空間的に分散して再放射を生じさせることにより、位相は効果的に攪乱される。このため、THz波拡散体100において粒子状分散質10の濃度を高めすぎると、位相の攪乱が生じにくくなってしまう。 In the THz wave diffuser 100 of the present disclosure, it is preferable that the concentration of the particulate dispersoid is appropriately set. The concentration can be determined by using the number of particles of the particulate dispersoid 10, for example, by defining the number of particles per volume of the THz wave diffuser 100. Instead of the number of particles, the concentration can also be defined by other indicators such as the weight of the particulate dispersoid 10 per unit volume of the THz wave diffuser 100 or the optical density in the THz wave diffuser 100. To specifically determine the concentration, the relationship with the incident THz wave that is scattered, reflected, or absorbed by the particulate dispersoid 10 is taken into consideration. The intensity of the incident THz wave propagating through the THz wave diffuser 100 attenuates as it propagates, and the degree of attenuation is related to the concentration. The length measured from the incident surface to the position where the intensity at the time of incidence into the THz wave diffuser 100 is 1/e (where e is the base of the natural logarithm (Euler's number or Napier's number)) can be defined as the penetration length. When the concentration is high, the incident THz wave attenuates over a shorter distance, so the penetration length is small. Here, in the THz wave diffuser of this embodiment, it is not necessarily preferable to increase the concentration too much. If the concentration is too high, the incident THz wave will attenuate immediately after entering the THz wave diffuser. In addition, for these reasons, even if the concentration is the same, differences in characteristics will occur when the THz wave diffusers are unevenly distributed in some places. Therefore, the degree of dispersion (dispersibility) of the THz wave diffuser also relates to the characteristics. The attenuation of the incident THz wave in the THz wave diffuser of this embodiment is caused not only by absorption, in which energy is converted into heat, but also by re-radiation. If the incident THz wave attenuates rapidly over a short distance, re-radiation will occur within that short distance. In that case, the phase will be re-radiated without being disturbed much, and the phase disturbance effect may be weak. On the contrary, the phase is effectively disturbed by making the concentration moderately small and dispersing it spatially to cause re-radiation. Therefore, if the concentration of particulate dispersoid 10 in the THz wave diffuser 100 is too high, phase disturbance will be difficult to occur.

 このように、本実施形態のTHz波拡散体100においては、侵入長は、粒子状分散質10の濃度が小さい程大きくなって深くまで入射THz波が侵入する。このため、再放射の位置を空間的に分散させる目的で粒子状分散質10の濃度や分散度合いを調節することが有利である。具体的には、粒子状分散質10の濃度は、THz波拡散体100中の入射THz波の侵入長が入射THz波の波長以上となるような濃度よりも小さい値とされていると好ましく、入射THz波の波長の2倍以上となっていればさらに好ましい。また、THz波拡散体の分散度合いは、THz波拡散体が一部に集中するよりもより広い範囲に分散して分布している方が好ましい。 Thus, in the THz wave diffuser 100 of this embodiment, the lower the concentration of the particulate dispersoid 10, the greater the penetration depth, and the deeper the incident THz waves penetrate. For this reason, it is advantageous to adjust the concentration and degree of dispersion of the particulate dispersoid 10 in order to spatially disperse the positions of re-radiation. Specifically, it is preferable that the concentration of the particulate dispersoid 10 is a value smaller than the concentration at which the penetration length of the incident THz wave in the THz wave diffuser 100 is equal to or greater than the wavelength of the incident THz wave, and it is even more preferable that the concentration is equal to or greater than twice the wavelength of the incident THz wave. Furthermore, it is preferable that the degree of dispersion of the THz wave diffuser is distributed over a wider range than that of the THz wave diffuser being concentrated in one area.

4.位相攪乱効果
 本実施形態の位相攪乱効果について説明する。粒子状分散質10の個別の粒子1が入射THz波に対して応答し再放射する際の位相は、個別の粒子1における応答と再放射とがともに異方性を示すこと、および個別の粒子が位置的に分散して分布していること、の影響を受ける。図4A~Bは、位相攪乱効果の作用を説明する説明図であり、図4Aは透過時の作用を、図4Bは反射時の作用を示している。各図には、z方向に厚みをもつTHz波拡散体100の断面が描かれており、その断面における粒子状分散質10の個別の粒子を模式的に示している。
4. Phase Disturbance Effect The phase disturbance effect of this embodiment will be described. The phase when each particle 1 of the particulate dispersoid 10 responds to the incident THz wave and re-radiates it is affected by the fact that both the response and re-radiation in each particle 1 are anisotropic, and that each particle is distributed in a positionally dispersed manner. Figures 4A and 4B are explanatory diagrams for explaining the action of the phase disturbance effect, with Figure 4A showing the action during transmission and Figure 4B showing the action during reflection. Each figure shows a cross section of a THz wave diffuser 100 having a thickness in the z direction, and each particle of the particulate dispersoid 10 in the cross section is shown diagrammatically.

 透過時は、図4Aに示すとおり、個別の粒子1において、主として多重の入射と再放射が繰り返されることで生じる位相差が主に関与し、さらに個別の粒子1において入射THz波と再放射THz波との間に位相差が生じる場合にはそれも副次的に関与して、透過するTHz波の位相を攪乱させる。 As shown in Figure 4A, during transmission, the main factor is the phase difference that occurs at individual particles 1 due to repeated multiple incidences and re-emissions, and if a phase difference occurs between the incident THz wave and the re-emitted THz wave at an individual particle 1, this also plays a secondary role, disrupting the phase of the transmitted THz wave.

 位相攪乱効果に主な寄与をもつのが多数回の相互作用の効果(多重撹乱効果)である。透過するTHz波は、入射THz波それ自体が透過してくる成分のみならず、別の個別の粒子1が再放射した再放射THz波の成分も含んでいる。このため、THz波拡散体100を透過するTHz波は、個別の粒子1の受信作用により減衰した入射THz波、個別の粒子1により1度吸収されて再放射された(つまり1度だけ相互作用した)THz波、個別の粒子1により2度相互作用したTHz波、…、というTHz波の重ね合わせとなる。図4Aに関連して説明したように、個別の粒子1の相互作用の回数が同じTHz波も、個別の粒子1の向きの違いにより位相がばらついていることから、多数回相互作用したTHz波はさらに位相がばらついて撹乱されている。 The main contributor to the phase disturbance effect is the effect of multiple interactions (multiple disturbance effect). The transmitted THz wave contains not only the incident THz wave itself that is transmitted, but also the re-radiated THz wave component that is re-radiated by another individual particle 1. For this reason, the THz wave that transmits through the THz wave diffuser 100 is a superposition of THz waves, such as the incident THz wave attenuated by the receiving action of the individual particle 1, the THz wave that is absorbed once by the individual particle 1 and re-radiated (i.e., has interacted only once), the THz wave that has interacted twice with the individual particle 1, and so on. As explained in relation to FIG. 4A, even THz waves that have interacted with individual particles 1 the same number of times have phase variations due to differences in the orientation of the individual particles 1, and therefore the THz wave that has interacted multiple times has further phase variations and is disturbed.

 位相攪乱効果に副次的な寄与をもちうる入射THz波と再放射THz波との間に個別の粒子1で生じうる位相差は次のように説明される。図4Aには、粒子1A、1B、1Cを示している。図4Aに、x方向の電界をもつ直線偏光の平面波の入射THz波Wiがz方向(紙面の右方向)に向かいながら入射するとする。また、粒子1A、1Cはともにz方向に直交するx軸に沿った螺旋軸をもち、粒子1Bはz軸に沿った螺旋軸を持つとする。図4Aには、上部に入射THz波Wiのある時刻の振幅を減衰の様子を含めて描写し、粒子1A~1Cの再放射THz波Wt~Wtについては、透過方向の部分のみ、波面により示している。z方向の位置がずれている粒子1A、1Cは、そのずれに対応したタイミングで入射THz波を受信し、それぞれがTHz波を再放射する。同じ周波数のTHz波がずれたタイミングで受信され、ずれを維持したTHz波が再放射されるため、粒子1A、1Cからの再放射THz波Wt、Wtは、+z方向に向かう成分は互いに同じ位相である。再放射THz波Wt、Wtは、入射THz波Wiとの位相と比べると、相互作用(受信、再放射)のメカニズムに起因する位相差を持っているものの、粒子1A、1Cの位置のずれは、入射タイミングと放射タイミングがキャンセルしてしまうのである。これに対し、再放射粒子1Bの場合、粒子1A、1Cと異なる向き(配向)をもつことから、粒子1Bで再放射THz波Wtは、粒子1A、1Cからの再放射THz波Wt、Wtとの間でも位相差を持つ。入射THz波Wiは、個別の粒子1との相互作用によりTHz波拡散体100中をz方向に伝播するのに応じてその強度を弱めてゆく。 The phase difference that may occur in an individual particle 1 between the incident THz wave and the re-emitted THz wave, which may have a secondary contribution to the phase disturbance effect, is explained as follows. FIG. 4A shows particles 1A, 1B, and 1C. In FIG. 4A, it is assumed that an incident THz wave Wi, which is a linearly polarized plane wave having an electric field in the x direction, is incident while heading toward the z direction (to the right of the paper). In addition, it is assumed that both particles 1A and 1C have a helical axis along the x axis perpendicular to the z direction, and particle 1B has a helical axis along the z axis. In FIG. 4A, the amplitude of the incident THz wave Wi at a certain time is depicted at the top, including the attenuation state, and for the re-emitted THz waves Wt A to Wt C of particles 1A to 1C, only the portion in the transmission direction is shown by a wavefront. The particles 1A and 1C, which are shifted in position in the z direction, receive the incident THz wave at a timing corresponding to the shift, and each re-emits the THz wave. Since THz waves of the same frequency are received at shifted timings and THz waves that maintain the shift are re-emitted, the re-emitted THz waves Wt A and Wt C from the particles 1A and 1C have the same phase as each other in the components heading in the +z direction. Compared to the phase with the incident THz wave Wi, the re-emitted THz waves Wt A and Wt C have a phase difference due to the mechanism of interaction (reception, re-emission), but the shift in the positions of the particles 1A and 1C cancels the incident timing and emission timing. In contrast, in the case of the re-emitted particle 1B, since it has a different orientation (orientation) from the particles 1A and 1C, the re-emitted THz wave Wt B from the particle 1B also has a phase difference with the re-emitted THz waves Wt A and Wt C from the particles 1A and 1C. The incident THz wave Wi weakens its intensity as it propagates in the z direction in the THz wave diffuser 100 due to the interaction with each particle 1.

 このように、THz波拡散体100は、THz波を透過させる利用態様においても、位相攪乱効果を発揮する。なお、図4Aに関する説明において、粒子1A、1Cに対して再放射THz波に位相差が生じないのは、入射THz波の向き(z方向)に向かう方向の正面に向かう再放射THz波を想定し、さらに粒子1A、1Cの向きも偏光および入射方向との関係が同一であったためである。再放射THz波が一般には方向分布を持つことや、個々の粒子の配向が分布していて同じ配向のものはほとんど存在しないことから、THz波拡散体100を透過で利用する場合にも十分な位相撹乱効果を得ることができる。 Thus, the THz wave diffuser 100 exerts a phase disturbance effect even when used in a manner that transmits THz waves. In the explanation of FIG. 4A, the reason that no phase difference occurs in the re-radiated THz waves for particles 1A and 1C is because it is assumed that the re-radiated THz waves are directed forward in the direction of the incident THz wave (z direction), and furthermore, the orientation of particles 1A and 1C is the same in relation to the polarization and incident direction. Since re-radiated THz waves generally have a directional distribution, and the orientation of individual particles is distributed such that there are almost no particles with the same orientation, it is possible to obtain a sufficient phase disturbance effect even when the THz wave diffuser 100 is used in a transmitted manner.

 反射時も、図4Bに示すとおり、個別の粒子の位置的な分布による光路差の効果が位相の攪乱に主に関与し、個別の粒子において入射THz波と再放射THz波との間に生じる位相差や個別の粒子の異方性が生じさせる位相差が副次的に関与する。図4Bには、上部にある時刻の振幅で示す入射THz波Wiと、粒子1A~1Cの再放射THz波Wr~Wrの透過方向の部分を波面で示している。z方向の位置が異なっている粒子1A、1Cは、+z方向への透過では位相差を生まなかったが、-z方向への反射では、粒子1A、1C自体のz方向の位置がずれていることにより、再放射THz波WrとWrには位相差が生じる。これは、入射THz波Wiが粒子1A、1Cに到達するタイミングがずれることと、粒子1A、1Cから再放射THz波WrとWrとが-z方向へ伝播する際の放射される位置がずれることの両方に起因する。なお、透過の場合と同様に、再放射THz波Wr、Wrが、入射THz波Wiとの間で相互作用(受信、再放射)のメカニズムに起因する位相差を持ち、粒子1Bにおいて、粒子1A、1Cと異なる配向により粒子1Bで再放射THz波Wrが、粒子1A、1Cからの再放射THz波Wr、Wrとの間で位相差を持つ。入射THz波WiがTHz波拡散体100中をz方向に伝播するのに応じてその強度を弱めてゆくことも同様である。さらに、位相のみならず、個別の粒子1の向き(配向)に応じて受信および再放射の効率が異なって、再放射THz波が、個別の粒子の配向に応じた強度を示すこと、多重撹乱効果が生じることも同様である。ただし、THz波拡散体100を反射の配置で使用する場合には、透過と異なり、個別の粒子1の受信作用により減衰した入射THz波は直接反射してこないために考慮する必要はない。このため、THz波拡散体100により反射されるTHz波は、個別の粒子1により1度吸収されて再放射された(1度だけ相互作用した)THz波、個別の粒子1により2度相互作用したTHz波、…、というTHz波の重ね合わせとなる。 As shown in FIG. 4B, even during reflection, the effect of the optical path difference due to the positional distribution of individual particles is primarily involved in the disturbance of the phase, and the phase difference between the incident THz wave and the re-emitted THz wave in each particle and the phase difference caused by the anisotropy of each particle are secondarily involved. FIG. 4B shows the incident THz wave Wi shown by the amplitude of the time at the top, and the transmission direction of the re-emitted THz waves Wr A to Wr C of the particles 1A to 1C in the wavefront. The particles 1A and 1C, which are at different positions in the z direction, did not produce a phase difference in the transmission in the +z direction, but when reflected in the -z direction, a phase difference occurs between the re-emitted THz waves Wr A and Wr C due to the shift in the z direction positions of the particles 1A and 1C themselves. This is due to both the shift in the timing at which the incident THz wave Wi reaches the particles 1A and 1C, and the shift in the emission position when the re-emitted THz waves Wr A and Wr C propagate from the particles 1A and 1C in the -z direction. As in the case of transmission, the re-radiated THz waves Wr A and Wr C have a phase difference due to the mechanism of interaction (reception, re-radiation) with the incident THz wave Wi, and the re-radiated THz wave Wr B in the particle 1B has a phase difference with the re-radiated THz waves Wr A and Wr C from the particles 1A and 1C due to the different orientation from the particles 1A and 1C in the particle 1B. It is also the same that the intensity of the incident THz wave Wi is weakened as it propagates in the z direction in the THz wave diffuser 100. Furthermore, it is also the same that not only the phase but also the efficiency of reception and re-radiation differs depending on the orientation (orientation) of each particle 1, and the re-radiated THz wave shows an intensity according to the orientation of each particle, and a multiple disturbance effect occurs. However, when the THz wave diffuser 100 is used in a reflection arrangement, unlike transmission, the incident THz wave attenuated by the reception action of each particle 1 is not directly reflected and does not need to be considered. For this reason, the THz waves reflected by THz wave diffuser 100 are a superposition of THz waves, such as a THz wave that has been absorbed once by an individual particle 1 and re-emitted (interacted only once), a THz wave that has interacted twice with an individual particle 1, and so on.

 このように、THz波拡散体100は、THz波を反射させる利用態様においても、位相攪乱効果を発揮する。 In this way, the THz wave diffuser 100 exerts a phase disruption effect even when used to reflect THz waves.

 なお、透過時および反射時の説明は典型的な配置による説明であり、本実施形態のTHz波拡散体においては種々の方向での位相の攪乱が実現される。個別の粒子1の配向も、3次元的に任意の向きを向いていることにより、個別の粒子1による位相攪乱が実現しうる。また、本開示の実施形態のTHz波拡散体では上記説明のような位相攪乱効果が生じるとともに、個別の粒子1におけるジュール熱への変換も同時に生じるため、本実施形態のTHz波拡散体は吸収体としての作用も発揮しうる。 Note that the explanations given for transmission and reflection are based on a typical arrangement, and the THz wave diffuser of this embodiment can achieve phase disturbance in various directions. The orientation of the individual particles 1 can also be oriented in any direction in three dimensions, thereby enabling phase disturbance by the individual particles 1. Furthermore, in the THz wave diffuser of the embodiment of the present disclosure, the phase disturbance effect as described above occurs, and at the same time, conversion to Joule heat occurs in the individual particles 1, so the THz wave diffuser of this embodiment can also act as an absorber.

6.製造方法
 図5は、本実施形態のTHz波拡散体100を製造する典型的な方法を示すフローチャートである。まず、コイル形状の微小物体が形成される(S02)。このためには、例えばスピルリナを目的の形状となるように成長させる。次に、コイル形状の微小物体から金属マイクロコイルを形成する(S04)。具体的には、コイル形状の微小物体の表面に金属層を形成する。このためには、例えば無電解めっきを採用することができる。この段階で、粒子状分散質10が製造される。非特許文献5には、スピルリナを目的の形状となるように成長させる具体的手法や、成長させたスピルリナの表面に金属層を形成する手法が詳述されている。ついで、粒子状分散質10を分散媒2または分散媒2の前駆体に分散させ(S06)、その分散状態を固定する(S08)。分散媒が、熱可塑性の樹脂などであれば、加熱して流動性を発揮させているその熱可塑性の樹脂が分散媒の前駆体となるため、そこに粒子状分散質10を混合して分散させ、樹脂の流動性が失われる温度に冷却すれば、分散および固定は実現することができる。分散および固定の具体的な手法は、分散媒の性質に依存して決定することができる。必要に応じて粒子状分散質10の材質表面を化学修飾したり、分散性を高めるための分散剤を添加したり、といった分散性を高めるための任意の手段や任意の手法を採用することもできる。ただし、本実施形態のTHz波拡散体において分散性の程度は特段限定されない。
6. Manufacturing method FIG. 5 is a flow chart showing a typical method for manufacturing the THz wave diffuser 100 of this embodiment. First, a coil-shaped micro object is formed (S02). For this purpose, for example, spirulina is grown to have a desired shape. Next, a metal microcoil is formed from the coil-shaped micro object (S04). Specifically, a metal layer is formed on the surface of the coil-shaped micro object. For this purpose, for example, electroless plating can be adopted. At this stage, the particulate dispersoid 10 is manufactured. Non-Patent Document 5 details a specific method for growing spirulina to have a desired shape and a method for forming a metal layer on the surface of the grown spirulina. Next, the particulate dispersoid 10 is dispersed in the dispersion medium 2 or a precursor of the dispersion medium 2 (S06), and the dispersion state is fixed (S08). If the dispersion medium is a thermoplastic resin, the thermoplastic resin that has been heated to exhibit fluidity becomes a precursor of the dispersion medium, so that the particulate dispersoid 10 is mixed and dispersed therein, and then cooled to a temperature at which the resin loses its fluidity, whereby dispersion and fixation can be realized. The specific method of dispersion and fixation can be determined depending on the properties of the dispersion medium. Any means or method for enhancing dispersibility can be adopted, such as chemically modifying the surface of the material of the particulate dispersoid 10 or adding a dispersant for enhancing dispersibility, as necessary. However, the degree of dispersibility in the THz wave diffuser of this embodiment is not particularly limited.

7.実施例
 本実施形態のTHz波拡散体の実施例としてサンプルを作製し実際の反射特性を測定した。図6A~Bは反射率測定系の光学素子配置の概要を示す模式図であり、図7Aは電磁パルスの波形を示すグラフであり、図7Bは、FFT処理により算出された電磁パルスのスペクトルである。
7. Example As an example of the THz wave diffuser of this embodiment, a sample was prepared and the actual reflection characteristics were measured. Figures 6A and 6B are schematic diagrams showing an outline of the optical element arrangement of the reflectance measurement system, Figure 7A is a graph showing the waveform of an electromagnetic pulse, and Figure 7B is the spectrum of the electromagnetic pulse calculated by FFT processing.

 反射率測定はテラヘルツ時間領域分光法(THz-TDS)と呼ばれる手法により測定することができる。測定のためにTHz波領域に周波数成分をもつ電磁パルスが照射される。例えば、時間幅160.0 psecの計測ウインドウ期間内に1 psec程度のパルス幅をもつ電磁パルスが照射される。計測波形のスペクトルは、上記計測ウインドウ期間における計測波形を含むデータをFFT(高速フーリエ変換)処理することで得られる。本実施形態では、THz波の一部をカバーする0.1~3.5THzの帯域となった。また、測定のダイナミックレンジは80dB程度確保することができる。図6A、Bに示すとおり、THz波照射器EはサンプルSに対して上方から照明する落射照明系となり、THz波検出器Dは、例えばTHz波照射器Eとの間で互いの瞳位置がおおむね共焦点となるように配置されている。このために適当なハーフミラーHMが利用され、THz波を透過する材質の対物レンズLが配置される。図6Aは、THz波照射器Eからの照明となるTHz波がその上面付近のサンプルSの内部に収束し、そこからの反射波がTHz波検出器Dに収束する配置を模式的に示している。これは、サンプルSの上面付近のサンプル内部の反射信号を効率良く計測する配置である。図6Bは、同様に下面付近のサンプル内部からの反射信号を効率良く計測する配置である。ただし、対物レンズL、THz波検出器Dを含む受光系のサンプルS側の被写界深度は十分に大きく、THz波照射器EにはサンプルSの深度方向(z方向)のどの位置からの反射波も入射する。実際の測定系では、可変光路長の遅延パス(図示しない)が設けられており、光路長を調整することにより、サンプルSの深さ方向(図のz方向)の各位置に対しその位置からのTHz波の反射成分を検出することができる。このため、z方向の位置を精密に決定するためには、遅延パスの光路長が調整される。金属ミラーMMは、サンプルSの下方に配置されることがあり、THz波を反射させるミラーとしての役割をもつ。金属ミラーMMはTHz波拡散体100が金属板などTHz波を反射させる物体に取り付けられた状態を再現するために必要に応じて配置される。 Reflectance can be measured by a method called terahertz time-domain spectroscopy (THz-TDS). For measurement, an electromagnetic pulse having a frequency component in the THz wave region is irradiated. For example, an electromagnetic pulse having a pulse width of about 1 psec is irradiated within a measurement window period of 160.0 psec. The spectrum of the measurement waveform is obtained by FFT (fast Fourier transform) processing of data including the measurement waveform during the measurement window period. In this embodiment, the band is 0.1 to 3.5 THz, which covers a part of the THz wave. In addition, the dynamic range of the measurement can be secured to about 80 dB. As shown in Figures 6A and 6B, the THz wave irradiator E is an epi-illumination system that illuminates the sample S from above, and the THz wave detector D is arranged, for example, so that the pupil positions of the THz wave irradiator E and the THz wave detector D are approximately confocal. For this purpose, an appropriate half mirror HM is used, and an objective lens L made of a material that transmits THz waves is arranged. FIG. 6A shows a schematic arrangement in which the THz wave from the THz wave irradiator E converges inside the sample S near its upper surface, and the reflected wave from there converges on the THz wave detector D. This is an arrangement for efficiently measuring the reflected signal from inside the sample near the upper surface of the sample S. FIG. 6B is an arrangement for efficiently measuring the reflected signal from inside the sample near the lower surface. However, the depth of field on the sample S side of the light receiving system including the objective lens L and the THz wave detector D is sufficiently large, and the reflected wave from any position in the depth direction (z direction) of the sample S is incident on the THz wave irradiator E. In the actual measurement system, a delay path (not shown) with a variable optical path length is provided, and by adjusting the optical path length, the reflected component of the THz wave from each position in the depth direction (z direction in the figure) of the sample S can be detected. Therefore, in order to precisely determine the position in the z direction, the optical path length of the delay path is adjusted. The metal mirror MM may be placed below the sample S, and serves as a mirror that reflects the THz wave. The metal mirror MM is positioned as necessary to reproduce the state in which the THz wave diffuser 100 is attached to an object that reflects THz waves, such as a metal plate.

 図7Aは、THz波照射器Eから放射される電磁パルスをTHz波検出器Dで検出した電圧波形を示すグラフであり、図7Bは、その電圧波形から得られるパワースペクトルのグラフである。計測ウインドウ期間(一例では160psec)は、サンプルの厚みをTHz波が往復する時間をカバーすることができる長さの時間である。また、各サンプルの測定では、サンプル中の金属マイクロコイルからの微小な反射パルス列の視認性を高めるため、反射時間波形には適当なフィルター処理を施した。 Figure 7A is a graph showing the voltage waveform of the electromagnetic pulse emitted from the THz wave irradiator E and detected by the THz wave detector D, and Figure 7B is a graph of the power spectrum obtained from that voltage waveform. The measurement window period (160 psec in one example) is a length of time that can cover the time it takes for the THz wave to travel back and forth through the thickness of the sample. In addition, when measuring each sample, an appropriate filter was applied to the reflected time waveform to improve the visibility of the minute reflected pulse train from the metal microcoil in the sample.

 図8A~Cは、実際に作製した各サンプル(実施例サンプル1(図8A)、実施例サンプル2(図8B)、比較例サンプル3(図8C))の外観写真である。図9A~Cは、図6Aの配置により実際に測定された反射配置における反射信号で、実施例サンプル1(図9A)、実施例サンプル2(図9B)、比較例サンプル3(図9C)のものである。図10A~Bは、実際にサンプルにおいて測定された反射配置における反射スペクトルで、実施例サンプル1(図10A)、比較例サンプル3(図10B)のそれぞれから得られた反射スペクトルである。 Figures 8A-C are external photographs of each sample that was actually produced (Example Sample 1 (Figure 8A), Example Sample 2 (Figure 8B), Comparative Example Sample 3 (Figure 8C)). Figures 9A-C are reflection signals actually measured in the reflection arrangement of Figure 6A for Example Sample 1 (Figure 9A), Example Sample 2 (Figure 9B), and Comparative Example Sample 3 (Figure 9C). Figures 10A-B are reflection spectra actually measured in the reflection arrangement of the samples, and are the reflection spectra obtained from Example Sample 1 (Figure 10A) and Comparative Example Sample 3 (Figure 10B).

 図8Aの実施例サンプル1は、分散媒2のためにエスレンビーズの発泡体(いわゆる発泡スチロール)を採用し、金属マイクロコイル3を粒子状分散質10として分散媒2に分散させたものである。実施例サンプル1の金属マイクロコイル3は、左巻き、100μm程度の軸方向長さをもつように成長させたスピルリナ4に金属薄膜5のためにニッケルを無電解めっきで形成したものである。実施例サンプル1では、粒子状分散質10の濃度を、0.51w/v%程度とし、厚みdは20mmであった。図8Bの実施例サンプル2は、実施例サンプル1の条件で、金属マイクロコイル3の金属薄膜5のために銅を無電解めっきで形成したものを採用し、かつ、粒子状分散質10の濃度を、0.25w/v%以下とし、厚みdは15mmであった。図8Cの比較例サンプル3は、従来のテラヘルツ帯での標準的な吸収体・低反射体である厚み0.6cmのEccosorb AN-72シート(Laird社製)である。 In Example Sample 1 of FIG. 8A, foamed styrene beads (so-called expanded polystyrene) are used for the dispersion medium 2, and metal microcoils 3 are dispersed in the dispersion medium 2 as particulate dispersoids 10. The metal microcoil 3 of Example Sample 1 is a left-handed spirulina 4 grown to have an axial length of about 100 μm, on which nickel is formed by electroless plating for the metal thin film 5. In Example Sample 1, the concentration of the particulate dispersoid 10 is about 0.51 w/v%, and the thickness d is 20 mm. Example Sample 2 of FIG. 8B uses the same conditions as Example Sample 1, but uses copper formed by electroless plating for the metal thin film 5 of the metal microcoil 3, and the concentration of the particulate dispersoid 10 is 0.25 w/v% or less, and the thickness d is 15 mm. Comparative example sample 3 in Figure 8C is a 0.6 cm thick Eccosorb AN-72 sheet (manufactured by Laird Corporation), a standard absorber and low reflector in the conventional terahertz band.

 図9A~Cに、図6Aの配置で金属ミラーMMを配置せずに実際に測定された反射配置における反射振幅信号を示す。各図において、横軸はサンプルの厚み方向(図6A、Bにおける紙面上の上下方向)の位置に対応する遅延時間(単位psec)であり、計測ウインドウ期間(160psec)の範囲で示している。また、各サンプルでは、図6Aに示すように各サンプルの入射側表面に焦点を合せた配置で反射計測を実施した。各図の縦軸はTHz波検出器Dの出力電圧値を示し、電圧値は任意単位で示されている。ただし、各図における2本の曲線の間、および図9A~Cの間では同じ値は同じ電圧値を示すように単位が維持されている。各図において、遅延時間の小さな値は図6Aにおける各サンプルの上面側に対応しており、各サンプル内部の位置的範囲に対応する遅延時間の範囲を両頭矢印で示している。各図の黒実線は、サンプルを配置せず測定したバックグラウンド信号であり、斜線パターンを重ねた曲線が、各サンプルを配置したものである。斜線を重ねた曲線は、いずれも、両頭矢印の範囲からはずれる遅延時間、つまりサンプル外では、概ね黒実線と重なっている。これは、金属ミラーMMが配置されない場合はサンプルの下方側も含めて、その位置からの反射が生じていないことを示している。斜線を重ねた曲線において、黒実線から乖離している値が実際の反射信号であり、いずれのサンプルでも両頭矢印の範囲に有意な値が分布している。 9A-C show the reflection amplitude signals in the reflection arrangement actually measured without placing the metal mirror MM in the arrangement of FIG. 6A. In each figure, the horizontal axis is the delay time (unit: psec) corresponding to the position in the thickness direction of the sample (the vertical direction on the paper in FIG. 6A and B), and is shown in the range of the measurement window period (160 psec). Also, for each sample, reflection measurement was performed in an arrangement focused on the incident surface of each sample as shown in FIG. 6A. The vertical axis of each figure shows the output voltage value of the THz wave detector D, and the voltage value is shown in arbitrary units. However, the units are maintained so that the same value shows the same voltage value between the two curves in each figure and between FIG. 9A-C. In each figure, the small value of the delay time corresponds to the top side of each sample in FIG. 6A, and the range of the delay time corresponding to the positional range inside each sample is shown by the double-headed arrow. The black solid line in each figure is the background signal measured without placing a sample, and the curve with the diagonal line pattern overlaid is the one with each sample placed. In all cases, the curves with diagonal lines overlap mostly with the solid black line for delay times outside the range of the double-headed arrows, i.e., outside the sample. This shows that when the metal mirror MM is not placed, no reflection occurs from that position, including below the sample. In the curves with diagonal lines, values that deviate from the solid black line are the actual reflected signals, and significant values are distributed within the range of the double-headed arrows for all samples.

 具体的には、図9Aの実施例サンプル1では、両頭矢印で示すサンプル内部に対応する遅延時間のうち、5psec~50psecの範囲つまり入射側表面付近に対応する遅延時間に反射信号が集中し、50psec~135psecは、サンプル内部であるにもかかわらず反射信号はごく弱い値となった。また、金属ミラーMMを配置した測定値(図示しない)との比較でも反射信号自体がいずれの遅延時間でも大差なかった。このため、実施例サンプル1では、入射側表面から入射して短い距離の範囲で入射THz波が良好に吸収され、サンプル裏面(図6A、Bの紙面上下方)まで入射THz波が到達していなかったと考えている。 Specifically, in Example Sample 1 in Figure 9A, of the delay times corresponding to the inside of the sample indicated by the double-headed arrow, the reflected signal was concentrated in the range of 5 psec to 50 psec, that is, the delay times corresponding to the vicinity of the incident surface, and from 50 psec to 135 psec, the reflected signal was very weak despite being inside the sample. Also, when compared with the measured value (not shown) in which a metal mirror MM was placed, the reflected signal itself did not differ significantly at any of the delay times. For this reason, it is believed that in Example Sample 1, the incident THz wave was well absorbed within a short distance from the incident surface, and did not reach the rear surface of the sample (above or below the paper in Figures 6A and B).

 図9Bの実施例サンプル2は、両頭矢印で示すサンプル内部に対応する遅延時間のうち、10psec~140psecの範囲つまり入射側表面からサンプル裏面に至る全領域に対応する遅延時間に反射信号が分散している。また、金属ミラーMMを配置した測定値(図示しない)では、140psecを超した位置で反射信号が大きくなっていた。このため、実施例サンプル2では、サンプルの厚み全域にわたる比較的弱い吸収が実現し、サンプル裏面まで入射THz波が到達していたと考えている。 In Example Sample 2 in Figure 9B, the reflected signal is distributed over a range of 10 psec to 140 psec, out of the delay times corresponding to the inside of the sample indicated by the double-headed arrow, that is, delay times corresponding to the entire region from the incident surface to the back surface of the sample. Also, in the measured value (not shown) in which the metal mirror MM was placed, the reflected signal became large at positions exceeding 140 psec. For this reason, it is believed that in Example Sample 2, relatively weak absorption was achieved throughout the entire thickness of the sample, and the incident THz wave reached the back surface of the sample.

 これらに対し、図9Cの比較例サンプル3は、両頭矢印で示すサンプル内部に対応する遅延時間70psec~140psecのうち、入射側表面からごく狭いサンプル内部の範囲に対応する遅延時間70psec~90psecに強い反射信号が生じている。また、比較例サンプル3では金属ミラーMMを配置した測定値(図示しない)において、140psecを超した位置で反射信号は観察されていない。これらの結果から、比較例サンプル3では入射THz波が、サンプル裏面に至るまでに減衰しているものの、入射側表面から浅い位置で反射しているといえる。比較例サンプル3では減衰自体は十分といえるが、反射率が比較的高いのである。また、比較例サンプル3ではでは厚み方向の狭い範囲で反射率が高く、反射信号の波形も、図7Aの照射したパルス波形を強く反映している。反射信号だけに着目すると、実施例サンプル1、2に比べて比較例サンプル3では強く、パルス波形に現れる位相が保存されたまま反射されてしまっている。これらの結果から、比較例サンプル3は、入射THz波の位相を撹乱させる作用は弱いものと本発明者は考えている。なお、図6Aの配置による測定結果を説明したが、サンプル裏面に収束させる図6Bの配置での測定結果も有意な相異を示さなかった。 In contrast to these, in Comparative Example Sample 3 in FIG. 9C, a strong reflected signal is generated at a delay time of 70 psec to 90 psec, which corresponds to a very narrow range inside the sample from the incident surface, among the delay times of 70 psec to 140 psec corresponding to the inside of the sample indicated by the double-headed arrow. In Comparative Example Sample 3, no reflected signal is observed at a position exceeding 140 psec in the measured value (not shown) in which the metal mirror MM is placed. From these results, it can be said that in Comparative Example Sample 3, the incident THz wave is attenuated before reaching the back surface of the sample, but is reflected at a shallow position from the incident surface. In Comparative Example Sample 3, the attenuation itself can be said to be sufficient, but the reflectivity is relatively high. In Comparative Example Sample 3, the reflectivity is high in a narrow range in the thickness direction, and the waveform of the reflected signal also strongly reflects the irradiated pulse waveform in FIG. 7A. Focusing only on the reflected signal, it is stronger in Comparative Example Sample 3 than in Example Samples 1 and 2, and the phase appearing in the pulse waveform is preserved when it is reflected. From these results, the inventors believe that Comparative Example Sample 3 has a weak effect of disturbing the phase of the incident THz wave. Note that while the measurement results using the arrangement in Figure 6A have been explained, the measurement results using the arrangement in Figure 6B, in which the wave is focused on the rear surface of the sample, also showed no significant difference.

 図10A~Bは、実際に測定された反射配置における反射スペクトルで、実施例サンプル1(図10A)、比較例サンプル3(図10B)のそれぞれから得られた反射スペクトルである。各図の横軸は周波数(単位:THz)である。黒実線は、参照信号つまりサンプルを配置せず、反射体として図7Aのような金属ミラーMMだけを配置した測定値における反射信号それ自体の反射スペクトルである。これに対し、斜線を伴う曲線は、各サンプルの反射信号から得られる反射スペクトルである。黒実線はサンプルが配置されないため、黒実線から斜線を伴う曲線までの低下分がサンプルによる反射の寄与を反映している。図10Bに示す比較例サンプル3をみると、例えば0.3THz(300GHz)において、1/100(-20dB)弱程度だけ反射している。これに対し、同じ0.3THzにおいて、図10Aに示す実施例サンプル1では1/1000(-30dB)まで反射が抑制されている。図示しないが、実施例サンプル2においても実施例サンプル1とほぼ同様の反射スペクトルが計測された。図10Aと図10Bの比較から、本実施形態のTHz波拡散体100では、THz波のうち0.7THz程度を上限とする比較的低周波の範囲で、従来の吸収体を凌駕する程度の低反射体となっていることが確認された。この低反射性は、上述した位相攪乱効果と相まって、THz波の位相敏感な用途において本実施形態のTHz波拡散体100の優位性を示すものである。 Figures 10A-B show reflection spectra in the reflection arrangement actually measured, obtained from Example Sample 1 (Figure 10A) and Comparative Example Sample 3 (Figure 10B). The horizontal axis of each figure is frequency (unit: THz). The black solid line is the reflection spectrum of the reflected signal itself in the measured value in which no reference signal, i.e. no sample, is placed, and only the metal mirror MM as in Figure 7A is placed as a reflector. In contrast, the curves with diagonal lines are the reflection spectrum obtained from the reflected signal of each sample. Since no sample is placed in the black solid line, the drop from the black solid line to the curve with diagonal lines reflects the contribution of reflection by the sample. Looking at Comparative Example Sample 3 shown in Figure 10B, for example, at 0.3 THz (300 GHz), only a little less than 1/100 (-20 dB) is reflected. In contrast, at the same 0.3 THz, reflection is suppressed to 1/1000 (-30 dB) in Example Sample 1 shown in Figure 10A. Although not shown, a reflection spectrum similar to that of Example Sample 1 was measured for Example Sample 2. Comparing Figures 10A and 10B, it was confirmed that the THz wave diffuser 100 of this embodiment is a low reflector that surpasses conventional absorbers in the relatively low frequency range of THz waves, with an upper limit of approximately 0.7 THz. This low reflectivity, combined with the phase disturbance effect described above, demonstrates the superiority of the THz wave diffuser 100 of this embodiment in phase-sensitive applications of THz waves.

 以上に示すように、本実施形態のTHz波拡散体では、位相攪乱効果が実現し、位相敏感な用途に適する性質が発揮される。 As described above, the THz wave diffuser of this embodiment achieves a phase-disturbing effect and exhibits properties suitable for phase-sensitive applications.

 異方性は、必ずしも粒子状分散質10のために金属マイクロコイル3が採用された場合だけではなく、粒子状分散質10の個別の粒子1の材質や微細構造が他の構成でも実現できる。例えば、個別の粒子が導電性の金属のみを用いたマイクロコイルが考えられる。ただし、現状の金属加工技術で同等のサイズのマイクロコイル形状の作製は実現していない。金属マイクロコイルはいわゆるスパイラルアンテナとして広帯域でコンパクトなアンテナとして実用化されており、携帯電話のアンテナ等に活用されている。 Anisotropy is not necessarily achieved only when metal microcoils 3 are used for the particulate dispersoid 10, but can also be achieved when the individual particles 1 of the particulate dispersoid 10 have different materials and microstructures. For example, a microcoil in which the individual particles are made of only conductive metal is conceivable. However, current metal processing technology has not yet achieved the fabrication of a microcoil shape of a similar size. Metal microcoils are in practical use as so-called spiral antennas, which are broadband and compact antennas, and are used in mobile phone antennas, etc.

 以上本開示の実施形態について具体的に説明した。上述の各実施形態および実施例は、発明を説明するために記載されたものであり、本出願の発明の範囲は、請求の範囲の記載に基づいて定められるべきものである。また、各実施形態の他の組合せを含む本開示の範囲内に存在する変形例もまた請求の範囲に含まれるものである。 The above provides a specific description of the embodiments of the present disclosure. The above-mentioned embodiments and examples are described in order to explain the invention, and the scope of the invention of this application should be determined based on the description of the claims. In addition, modifications that exist within the scope of this disclosure, including other combinations of the embodiments, are also included in the claims.

 100 THz波拡散体
 10 粒子状分散質
 1、1A、1B、1C (粒子状分散質の)個別の粒子
 2 分散媒
 3 金属マイクロコイル
 4 スピルリナ
 5 金属薄膜
 D THz波検出器
 E THz波照射器
 HM ハーフミラー
 L 対物レンズ
 MM 金属ミラー
 S サンプル
100 THz wave diffuser 10 Particulate dispersoid 1, 1A, 1B, 1C Individual particle (of particulate dispersoid) 2 Dispersion medium 3 Metal microcoil 4 Spirulina 5 Metal thin film D THz wave detector E THz wave irradiator HM Half mirror L Objective lens MM Metal mirror S Sample

Claims (10)

 入射テラヘルツ波を透過させる分散媒と、
 該入射テラヘルツ波に対して応答する材質と微細構造とを個別の粒子がもち、前記分散媒中に分散されて支持されている粒子状分散質と
 を備えている
 テラヘルツ波拡散体。
a dispersion medium that transmits incident terahertz waves;
a particulate dispersoid, each of the individual particles having a material and a microstructure that responds to the incident terahertz waves, the particulate dispersoid being dispersed and supported in the dispersion medium.
 前記粒子状分散質が前記入射テラヘルツ波の入射方向に沿ってある分散範囲にわたって前記分散媒に分散して配置されており、
 該分散範囲が前記入射テラヘルツ波の波長以上である
 請求項1に記載の拡散体。
the particulate dispersoid is dispersed and disposed in the dispersion medium over a certain dispersion range along the incident direction of the incident terahertz wave,
The diffuser of claim 1 , wherein the dispersion range is equal to or greater than the wavelength of the incident terahertz wave.
 前記粒子状分散質の前記分散媒中の濃度は、前記入射テラヘルツ波の前記拡散体中への侵入長が該入射テラヘルツ波の波長以上となるような濃度よりも小さい値とされている
 請求項1に記載の拡散体。
The diffuser according to claim 1 , wherein the concentration of the particulate dispersoid in the dispersion medium is smaller than a concentration at which the penetration depth of the incident terahertz wave into the diffuser is equal to or greater than the wavelength of the incident terahertz wave.
 前記粒子状分散質の個別の粒子が金属マイクロコイルである
 請求項1~3のいずれか1項に記載の拡散体。
The diffuser of any one of claims 1 to 3, wherein the individual particles of the particulate dispersoid are metal microcoils.
 前記金属マイクロコイルが、コイル形状の微小物体の表面に金属薄膜を形成したものである
 請求項4に記載の拡散体。
The diffuser according to claim 4 , wherein the metal microcoil is a coil-shaped micro object having a metal thin film formed on the surface thereof.
 前記微小物体がスピルリナである
 請求項5に記載の拡散体。
The diffuser according to claim 5, wherein the microscopic object is spirulina.
 前記粒子状分散質の個別の粒子が前記入射テラヘルツ波に応答して該入射テラヘルツ波と同じ周波数のテラヘルツ波を再放射するものである
 請求項1~3のいずれか1項に記載の拡散体。
4. The diffuser according to claim 1, wherein individual particles of the particulate dispersoid are responsive to the incident terahertz wave and re-radiate terahertz waves having the same frequency as the incident terahertz wave.
 前記個別の粒子の前記入射テラヘルツ波に対する応答が異方性を示し、
 前記粒子状分散質が、前記個別の粒子の向きをランダムに向けて前記分散媒に分散されている
 請求項7に記載の拡散体。
the response of the individual particles to the incident terahertz radiation is anisotropic;
The diffuser of claim 7 , wherein the particulate dispersoid is dispersed in the dispersion medium with the individual particles randomly oriented.
 前記入射テラヘルツ波が入射してくる側の半空間に戻る反射テラヘルツ波に、前記入射テラヘルツ波との間で分布をもつ位相差を与える
 請求項1に記載の拡散体。
The diffuser according to claim 1 , which gives a phase difference having a distribution between a reflected terahertz wave returning to the half space on the side where the incident terahertz wave is incident and the incident terahertz wave.
 コイル形状の微小物体の表面に金属薄膜を形成することにより金属マイクロコイルである粒子を製造する粒子状分散質の製造ステップと、
 入射テラヘルツ波を透過させる分散媒に前記粒子状分散質を分散させる分散ステップと
 を含むテラヘルツ波拡散体の製造方法。
A particulate dispersoid production step of producing particles that are metal microcoils by forming a metal thin film on the surface of a coil-shaped micro object;
a dispersing step of dispersing the particulate dispersoid in a dispersion medium that transmits incident terahertz waves.
PCT/JP2024/040741 2023-11-27 2024-11-15 Terahertz wave diffuser and method for manufacturing the same Pending WO2025115663A1 (en)

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Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2007514241A (en) * 2003-12-09 2007-05-31 リアクトリクス システムズ、 インコーポレイテッド Built-in interactive video display system
WO2022203007A1 (en) * 2021-03-26 2022-09-29 浜松ホトニクス株式会社 Dispersion stability evaluation method, and dispersion stability comparison method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007514241A (en) * 2003-12-09 2007-05-31 リアクトリクス システムズ、 インコーポレイテッド Built-in interactive video display system
WO2022203007A1 (en) * 2021-03-26 2022-09-29 浜松ホトニクス株式会社 Dispersion stability evaluation method, and dispersion stability comparison method

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Title
NOTAKE TAKASHI, KAMATA KAORI, IYODA TOMOKAZU, OTANI CHIKO, MINAMIDE HIROAKI: "Expression of various polarization effects by using Spirulina-templated metal μ coils at the terahertz frequency region", JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, JP, vol. 58, no. 3, 1 March 2019 (2019-03-01), JP , pages 032007, XP093319950, ISSN: 0021-4922, DOI: 10.7567/1347-4065/aafca6 *

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