WO2025111094A1

WO2025111094A1 - Electrostatic chuck with thermal interface for providing cooling uniformity and increasing voltage standoff

Info

Publication number: WO2025111094A1
Application number: PCT/US2024/052433
Authority: WO
Inventors: Yixuan YU; Eric SAMULON; Alexander Matyushkin; Aris PEREZ; Darrell EHRLICH; Keith Comendant
Original assignee: Lam Research Corp
Current assignee: Lam Research Corp
Priority date: 2023-11-20
Filing date: 2024-10-22
Publication date: 2025-05-30
Anticipated expiration: 2026-05-20

Abstract

An electrostatic chuck is provided. The electrostatic chuck includes a top surface, a side surface, and a bottom surface. The top surface includes a plurality of zones for outputting one or more cooling gases. At least one of the plurality of zones includes an arrangement of grooves. The arrangement of grooves includes at least a first set of grooves and a second set of grooves. The first and second sets of grooves are arranged in a concentric manner on the top surface. The second set of grooves forms a second ring-shaped pattern with a smaller diameter than a diameter of a first ring-shaped pattern formed by the first set of grooves. One or more grooves of the first set of grooves partially overlaps with two of the grooves of the second set of grooves in a radial direction along the top surface.

Description

ELECTROSTATIC CHUCK WITH THERMAL INTERFACE FOR PROVIDING COOLING UNIFORMITY AND INCREASING VOLTAGE STANDOFF

Field

[0001] The present embodiments relate to an electrostatic chuck with thermal interface for providing cooling uniformity and increasing voltage standoff.

Background

[0002] The background description provided herein is for the purposes of generally presenting the context of the disclosure. Work of the presently named inventors, to the extent it is described in this background section, as well as aspects of the description that may not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the present disclosure.

[0003] A plasma chamber is used to process a semiconductor wafer. To process the semiconductor wafer, features are etched within the semiconductor wafer. The semiconductor wafer is placed within the plasma chamber on top of a chuck. A process gas is supplied to the plasma chamber in addition to a radio frequency signal to process the semiconductor wafer. It is important that the semiconductor wafer be processed in a desirable manner.

Summary

[0004] Embodiments of the disclosure provide systems, apparatus, and methods for providing an electrostatic chuck with a thermal interface. The electrostatic chuck with the thermal interface provides cooling uniformity and increases voltage standoff. It should be appreciated that the present embodiments can be implemented in numerous ways, e.g., a process, an apparatus, a system, a device, or a method on a computer readable medium. Several embodiments are described below.

[0005] Porous plugs have been used as inserts within dielectric etch electrostatic (ESC) baseplate for light-up suppress. For example, the porous plugs reduce chances of arcing within the ESC baseplate. The porous plugs are fixed into the ESC baseplate with an over spray of plasma thermal spray coating creating a spray coat-porous plug interface. The spray coat- porous plug interface, sometimes, becomes a weak point for voltage standoff when not properly structured.

[0006] The porous plugs, such as cylindrical porous plugs, are inserted into ESC shoulder helium holes that form counterbores in the ESC baseplate. The plasma thermal spray coating, such as an alumina coating, is thermally sprayed to cover the ESC baseplate and the porous plugs. Subsequent grinding reduces thickness of the plasma thermal spray coating and exposes the porous plugs, creating a path for one or more cooling gases, such as Helium. When a very short distance for the spray coat-porous plug interface is left, a voltage standoff occurs, resulting in process issues.

[0007] In an embodiment, a new porous plug and baseplate counterbore geometry is provided within the ESC baseplate to create longer interfacial distances between the porous plugs and a top surface of the spray coat-porous plug interface, which substantially increases the voltage standoff. To increase the voltage standoff, a top edge of each of the counterbores is provided with a chamfer and an increased distance of the spray coat-porous plug interface is provided by increasing a size of the chamfer at each of the counterbores. When the size of the chamfer is increased, an interfacial distance between the top surface of the spray coat-porous plug interface and each of the porous plugs increases to increase the voltage standoff. Also, a porous plug taping angle formed by a line extending from the chamfer with respect to the top surface of the spray coat-porous plug interface is increased.

[0008] In an embodiment, an electrostatic chuck is provided. The electrostatic chuck includes a top surface, a side surface oriented vertically with respect to the top surface, and a bottom surface contiguous with the side surface. The top surface includes a plurality of zones for outputting one or more cooling gases. The plurality of zones enhances temperature uniformity of the electrostatic chuck during substrate processing. At least one of the plurality of zones includes an arrangement of grooves. The arrangement of grooves includes at least a first set of grooves and a second set of grooves. The first and second sets of grooves are arranged in a concentric manner on the top surface. The second set of grooves forms a second ring-shaped pattern with a smaller diameter than a diameter of a first ring-shaped pattern formed by the first set of grooves. One or more grooves of the first set of grooves partially overlaps with two of the grooves of the second set of grooves in a radial direction along the top surface.

[0009] In an embodiment, a plasma chamber is provided. The plasma chamber includes an upper electrode and the electrostatic chuck located below the upper electrode.

[0010] In one embodiment, a plasma system is provided. The plasma system includes a radio frequency (RF) generator that generates an RF signal. The plasma system also includes an impedance matching circuit coupled to the RF generator to receive the RF signal. The impedance matching circuit receives the RF signal to output a modified RF signal. The plasma system includes a plasma chamber coupled to the impedance matching circuit. The plasma chamber includes the electrostatic chuck.

[0011] Some advantages of the herein described systems and methods include increasing a size of the chamfer to increase the standoff voltage between the top surface of the spray coat-porous plug interface and the porous plugs that are inserted within the ESC baseplate. When the standoff voltage is increased, there are reduced chances of a voltage breakdown occurring due to an erosion of the spray coat-porous plug interface. Because of the reduce chances of the voltage breakdown, processing of a substrate occurs in a desirable manner.

[0012] Additional advantages of the herein described systems and methods include providing the ESC having multiple zones for outputting one or more cooling gases. Grooves of each of the multiple zones are arranged in an overlapping manner to achieve a uniform supply of one or more cooling gases. The uniform supply of the one or more cooling gases facilitates achieving uniformity in processing of the substrate. In addition, a space is provided between a set of grooves of one of the zones and an adjacent set of grooves of the zone to accommodate a high voltage pin for providing direct current (DC) power to a lower electrode within the ESC.

[0013] Other aspects will become apparent from the following detailed description, taken in conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

[0014] The embodiments may best be understood by reference to the following description taken in conjunction with the accompanying drawings.

[0015] Figure 1A is a diagram of a top isometric view of an embodiment of an electrostatic chuck to illustrate multiple zones for achieving uniformity in a temperature across a top surface of the electrostatic chuck.

[0016] Figure IB is a zoom-in view of a portion of the top surface of the electrostatic chuck.

[0017] Figure 1C is another zoom-in view of a portion of the top surface of the electrostatic chuck.

[0018] Figure 2 is a bottom isometric view of an embodiment of the electrostatic chuck.

[0019] Figure 3A is a top view of an embodiment of the electrostatic chuck.

[0020] Figure 3B is a front view of an embodiment of the electrostatic chuck to illustrate a difference between a horizontal level of a dielectric layer of the electrostatic chuck and a baseplate of the electrostatic chuck.

[0021] Figure 3C is a side view of an embodiment of the electrostatic chuck to illustrate a side surface of the electrostatic chuck.

[0022] Figure 3D is a top view of an embodiment of the electrostatic chuck to illustrate a flow of the one or more cooling gases from an opening of a groove of a series of one of the zones to grooves of an adjacent series of grooves of the zone.

[0023] Figure 4A is a zoom-in front view of an embodiment of a portion of the electrostatic chuck. [0024] Figure 4B is a zoom-in view of an embodiment of a temperature probe for measuring the temperature of the electrostatic chuck.

[0025] Figure 4C is a zoom-in view of an embodiment of a high voltage pin.

[0026] Figure 4D is a zoom-in view of an embodiment of a lift pin for lifting a substrate from the top surface of the electrostatic chuck.

[0027] Figure 4E is a side view of an embodiment of the electrostatic chuck to illustrate the lift pin.

[0028] Figure 5 is a bottom view of the electrostatic chuck to illustrate an opening for receiving the high voltage pin.

[0029] Figure 6 is a top view of a routing layer of the electrostatic chuck to illustrate a routing of the one or more cooling gases that are supplied to the zones.

[0030] Figure 7 is a side view of an embodiment of a system to illustrate a recess formed within a portion of the top surface of the electrostatic chuck.

[0031] Figure 8 is a diagram of an embodiment of the portion of the electrostatic chuck to illustrate that an increase in a distance from a top surface of a thermal coating to reduce chances of breakdown of a chamfer interface.

[0032] Figure 9 is a diagram of an embodiment of a graph to illustrate an increase from a range of voltage to a range of voltage achieved by using the chamfer interface.

[0033] Figure 10 is a diagram of an embodiment of a system to illustrate use of the electrostatic chuck within a plasma chamber.

DETAILED DESCRIPTION

[0034] The following embodiments describe systems, apparatus, and methods for providing an electrostatic chuck with a thermal interface. It will be apparent that the present embodiments may be practiced without some or all of these specific details. In other instances, well known process operations have not been described in detail in order not to unnecessarily obscure the present embodiments.

[0035] Figure 1A is a diagram of a top isometric view of an embodiment of an electrostatic chuck 100 to illustrate multiple zones for achieving uniformity in a temperature across a top surface 102 of the electrostatic chuck 100. Figure IB is a zoom-in view of a portion of the top surface 102. Figure 1C is another zoom-in view of a portion of the top surface 102.

[0036] With reference to Figure 1A, the zones include an inner zone 104, a middle zone 106, an outer-inner zone 108, and an outer-outer zone 110 formed on the top surface 102. The zones 104, 106, 108, and 110 are concentrically located on the top surface 102. For example, each zone 104, 106, 108, and 110 has the same center 112, which is a center of the top surface 102. To illustrate, each zone 104, 106, 108, and 110 is arranged in a ring-shaped pattern radially, such as along a radial direction, along the top surface 102. An example of a ring-shaped pattern, as used herein, is a circular pattern. Also, the zone 106 has a greater diameter than the zone 104, the zone 108 has a greater diameter than the zone 106, and the zone 110 is a greater diameter than the zone 108. As an example, a diameter of an object, such as a zone or a series of grooves of the zone, is a longest distance between two opposite edges of the object. The longest distance is a distance that is largest among all distances between two opposite edges of the object.

[0037] The radial direction, such as a radially inward direction or a radially outward direction, across the top surface 102 is a direction along a radius of the top surface 102 between the center 112 and a side surface 120 of the electrostatic chuck 100. For example, the radially outward direction across the top surface 102 is from the center 112 to the side surface 120 and the radially inward direction across the top surface 102 from the side surface 120 to the center 112.

[0038] The side surface 120 is vertically oriented with respect to the top surface 102, which is horizontally oriented. For example, the top surface 102 is located in a horizontal plane extending along an x-axis and the side surface 120 is located in a vertical plane extending along a y-axis. To illustrate, the top surface 102 extends in the horizontal plane and the side surface 120 extends in the vertical plane. The top surface 102 extends in a horizontal direction, along the x-axis, along a diameter of the electrostatic chuck 100. The side surface 120 has a ring shape, such as, a circular shape. The y-axis is perpendicular to the x-axis. A z-axis is perpendicular to each of the x-axis and the y-axis.

[0039] Each zone 104, 106, 108, and 110 has an arrangement of one or more sets, such as one or more series, of grooves. For example, the inner zone 104 has a first series of grooves 114A, 114B, 114C, and 114D, a second series of grooves 116A, 116B, 116C, and 116D, and a third series of grooves 118A, 118B, 118C, and 118D. The second series of grooves 116A, 116B, 116C, and 116D is arranged on the top surface 102 to form a ring-shaped pattern, such as a circular pattern, that has a greater diameter than a diameter of the first series of grooves 114A, 114B, 114C, and 114D. Also, the third series of grooves 118A, 118B, 118C, and 118D is arranged on the top surface 102 to have a greater diameter than the diameter of the second series of grooves 116A, 116B, 116C, and 116D. The third series of grooves 118A, 118B, 118C, and 118D is located in a concentric manner, such as is concentric or is concentrically located, with the second series of grooves 116A, 116B, 116C, and 116D and with the first series of grooves 114A, 114B, 114C, and 114D. To illustrate, each of the first, second and third series form a ring- shaped pattern, such as a round-shaped pattern, having the same center 112 of the top surface 102. [0040] Similarly, in the example, the middle zone 106 has a series 106A of grooves, a series 106B of grooves, and a series 106C of grooves. The series 106A is located in a concentric manner, such as is concentrically located, with respect to the series 106B and the series 106C. The series 106B forms a ring-shaped pattern to have a greater diameter than a diameter of a ring-shaped pattern formed by the series 106A, and a ring-shaped pattern formed by the series 106C has a greater diameter than the diameter of the ring-shaped pattern formed by the series 106B. Also, the diameter of the ring-shaped pattern formed by the series 106A is greater than the diameter of the ring-shaped pattern formed by the third series of grooves of the inner zone 104.

[0041] Also, in the example, the outer-inner zone 108 has a first series of grooves, a second series of grooves, and a third series of grooves and the outer-outer zone 110 has a single series of grooves that form a single ring pattern. The third series of the outer- inner zone 108 is located in a concentric manner, such as has the same center 112 as that of, with respect to the second series of the outer-inner zone 108 and the first series of the outer-inner zone 108. The second series of grooves of the outer- inner zone 108 has a ring-shaped pattern that has greater diameter than a diameter of a ring-shaped pattern formed by the first series of grooves of the outer-inner zone 108 and the third series of grooves of the outer-inner zone 108 has a ringshaped pattern that has a greater diameter than the diameter of the ring-shaped pattern of the second series of grooves of the outer-inner zone 108. Also, the diameter of the ring-shaped pattern of the first series of grooves of the outer-inner zone 108 is greater than the diameter of the ring-shaped pattern of the third series of grooves of the middle zone 106. A diameter of a ring-shaped pattern formed by the series of grooves of the outer-outer zone 110 is greater than the diameter of the ring-shaped pattern of the third series of grooves of the outer-inner zone 108. Each groove is sometimes referred to herein as a recess that is formed within the top surface 102. It should be noted that, in the example, each groove of each of the zonesl04, 106, and 108 is curved and non-linear. Also, in the example, all grooves except for one groove of the outer-outer zone 110 is curved and non-linear.

[0042] Each groove of a series of grooves of one of the zones 104, 106, and 108 partially overlaps with two grooves of an adjacent series of grooves of the zone in the radial direction to form an arrangement of multiple series of the grooves of the zone. For example, the groove 114A of the inner zone 104 partially overlaps with, such as extends azimuthally with respect to, the groove 116A of the inner zone 104 and the groove 116D of the inner zone 104 as viewed in the radial direction. To illustrate, with reference to Figure IB, when a first radial beam 122, in the horizontal plane, extends from the center 112 towards a circumference of the top surface 102, the first radial beam 122 intersects a portion 124A of the groove 114A and a portion 126A of the groove 116D. The first radial beam 122 also extends along the circumference of the top surface 102 to extend azimuthally along the top surface 102. The portion 124 A of the groove 114A intersected by the first radial beam 122 extends from an edge 128 of the groove 114A towards a center 130 of the groove 114 A and the portion of the groove 116D intersected by the first radial beam extends from an edge 132 of the groove 116D towards a center 134 of the groove 116D.

[0043] In the example, when a second radial beam 134, in the horizontal plane, extends from the center 112 towards the circumference of the top surface 102, the second radial beam intersects a portion 124B of the groove 114A and a portion 136 of the top surface 102 between the grooves 116A and 116D. The second radial beam also extends along the circumference of the top surface 102 to extend azimuthally along the top surface 102. Also, when a third radial beam 138, in the horizontal plane, extends from the center 112 towards the circumference of the top surface 102, the third radial beam 138 intersects a portion 124C of the groove 114A and a portion 126B of the groove 116A. The third radial beam also extends along the circumference of the top surface 102 to extend azimuthally along the top surface 102. The portion 124C of the groove 114A intersected by the third radial beam 138 extends from a second edge 140 of the groove 114A towards the center 130 of the groove 114A and the portion 126B of the groove 116A intersected by the third radial beam 138 extends from an edge 142 of the groove 116A towards a center 144 of the groove 116A. The edge 128 of the groove 114A is located at a first end of the groove 114A. The first end is located opposite to a second end of the groove 114A at which the edge 140 of the groove 114A is located. Also, the second radial beam 134 is adjacent to each of the first and third radial beams and situated between the first and third radial beams.

[0044] It should be noted that a portion of the top surface 102 lies between two adjacent grooves of a series of one of the zones 104, 106, 108, and 110. For example, between the grooves 116A and 116D, the portion 136 is located.

[0045] With reference back to Figure 1A, the arrangement of multiple series of grooves of each zone 104, 106, and 108 facilitates achieving azimuthal temperature uniformity across the top surface 102. For example, one or more cooling gases, such as helium, argon, or nitrogen, or a combination thereof, are received by a groove of a first series of one of the zones 104, 106, and 108 and the one or more cooling gases spread from the groove to the portions of two grooves of a second adjacent series of the zone with which the groove of the first series partially overlaps with to achieve uniformity in temperature across the top surface 102. To illustrate, with reference to Figure 1C, the one or more cooling gases are received by the groove 114A from an opening 101, such as an outlet, of a hole situated in a central region of the groove 116D and spread from the opening 101 to remaining portions of the groove 116D. Moreover, the one or more cooling gases received from the opening 101 spread via a portion 103 of the top surface 102 to portions of the grooves 118C and 118D. Also, the one or more cooling gases received from the opening 101 spread to portions of the grooves 114 A and 114D via a portion 146 of the top surface 102. The central region of the groove 116D includes the center 132 of the groove 116D. The spread of the one or more cooling gases from the opening 101 to the remaining portions of the groove 1 16D, the portions of the grooves 1 18C and 118D, and the portions of the grooves 114A and 114D results in the azimuthal temperature uniformity across the top surface 102. The azimuthal temperature uniformity across the top surface 102 facilitates achieving an azimuthal temperature uniformity across a bottom surface of a substrate, such as a semiconductor wafer, that is placed on the top surface 102. An example of the azimuthal temperature uniformity across the top surface 102 is uniformity in temperature along the circumference of the top surface 102. The arrangement of the gas grooves within zones 104, 106 and 108 provides a guided distribution path for the cooling gas in each zone so that the cooling gas is more evenly distributed within each zone after leaving the delivery outlets. Moreover, zone 108 has a bigger coverage area than zones 106 and 104 and therefore has more gas delivery outlets. For example, zone 108 may have 9 gas delivery outlets (compare to 7 at zone 106 and 4 at zone 104). Accordingly, in some embodiments, it is advantageous to have similar gas groove patterns in all three zones so that all the zones are guiding gas distribution similarly. This enhances zone to zone gas distribution uniformity even when the number of the gas delivery outlet is different.

[0046] Also, spread across the top surface 102 are multiple support structures, such as a support structure 148A and another support structure 148B, for supporting the substrate. In some examples, one or more support structures is fabricated from a dielectric material, such as a ceramic, for supporting the substrate. In some examples, the two or more support structures are spread around each of the zones 104, 106, 108, and 110 to support the substrate placed on the top surface 102.

[0047] The top surface 102 is divided into a portion 102 A and another portion 102B. The portion 102B is at a lower horizontal level, than a horizontal level of the portion 102A. A horizontal level, as used herein, is measured along the x-axis and/or z-axis. The portion 102B is of a baseplate of the electrostatic chuck 100 and the portion 102A is of a dielectric layer, such as a ceramic layer or a ceramic plate, of the electrostatic chuck 100. The portion 102B surrounds the portion 102 A. For example, a diameter of the portion 102B is greater than a diameter of the portion 102A. The dielectric layer of the electrostatic chuck 100 is placed above the baseplate and accommodates the zones 104, 106, 108, and 110. For example, the zones 104, 106, 108, and 110 are fabricated within the dielectric layer. The zones 104, 106, 108, and 110 are situated within the portion 102A. Also, the support structures are situated within the portion 102A.

[0048] The portion 102B includes a series of openings, such as an opening 150A, an opening 150B, an opening 150C, an opening 150D, an opening 150E, an opening 150F, an opening 150G, an opening 150H, and an opening 1501, that are located along the circumference of the top surface 102. In some embodiments, an electrostatic chuck 100 has nine 150 openings. In some embodiments, an electrostatic chuck 100 may have between seven to thirteen 150 openings. An opening is an example of an outlet. The openings of the portion 102B surround the zones 104, 106, 108, and 110. For example, a ring-shaped pattern formed by the openings of the portion 102B has a greater diameter than a diameter of the ring-shaped pattern formed by the outer-outer zone 110. One or more cooling gases, examples of which are provided above, are supplied via the openings of the portion 102B to control a temperature of an edge ring to further control a temperature at an edge of the substrate. Comparatively, the one or more cooling gases are supplied via the grooves of the zones 104, 106, 108, and 110 to control a temperature at a central region of the substrate. The central region of the substrate is surrounded by the edge of the substrate.

[0049] According to some embodiments at least three lift pins are arranged within a region of the portion 102A on the top surface 102. For example, in FIG. 1A, the portion 102 A of the top surface 102 has locations 105 A, 105B, and 105C for receiving lift pins for supporting the substrate. The lift pins are configured to extend via the electrostatic chuck 100 in a vertical direction parallel to the y-axis to raise or lower the substrate with respect to the top surface 102. Positions of the lift pins are arranged to avoid interference with the gas delivery zones (e.g., zones 104, 106, 108 and 110). In some examples, all lift pins 105 are arranged between the middle zone 106 and the outer-inner zone 108. In some examples, three lift pins form an equilateral triangle pattern within a circular area enclosed by the outer-inner zone 108. The equilateral triangle pattern allows the substrate to be raised and lowered evenly with minimal to no tilt or slippage.

[0050] In some embodiments, a raised barrier 107 is formed on the portion 102A. The raised barrier 107 is raised compared to a horizontal level of the zones 104, 106, 108, and 110, and is formed between the outer-outer zone 110 and the outer-inner zone 108. For example, a height of the raised barrier 107 is greater than heights of the zones 104, 106, 108, and 110. The raised barrier creates a separation between one or more cooling gases that are output from the outer-inner zone 108 and one or more cooling gases that are output from the outer-outer zone 110 to facilitate controlling a temperature of the substrate. In some embodiments, the raised barrier 107 may be eliminated (not needed) if the outer-outer zone 110 is further away from the outer-inner zone 108.

[0051] In one embodiment, each zone 104, 106, 108, and 110 has any number of series of grooves. For example, the zone 110 has multiple series of grooves instead of the single series of grooves. In some examples, the zone 110 is formed by a single circular groove (i.e., not segmented groves).

[0052] Figure 2 is a bottom isometric view of an embodiment of the electrostatic chuck 100. The electrostatic chuck 100 includes a bottom surface 202. The bottom surface 202 horizontally oriented, along the x-axis, is angled with respect to the side surface 120, and is contiguous with the side surface 120. For example, the bottom surface 202 is substantially perpendicular with respect to the side surface 120. Also, in the example, there is no other surface between the side surface 120 and the bottom surface 202 for the bottom surface 202 to be contiguous with, such as adjacent to, the side surface 120. To illustrate, the bottom surface 202 forms an angle between 85° and 90° from the side surface 120. As an example, the bottom surface 202 has a diameter equal to the diameter of the top surface 102 (Figure 1A). Located on the bottom surface 202 is an opening 204 for receiving a high voltage (HV) pin. The high voltage pin couples to an electrostatic electrode embedded within the dielectric layer of the electrostatic chuck 100 to provide direct current (DC) power to the electrostatic electrode. The DC power is provided to the electrostatic electrode for clamping the substrate to the top surface 102. In some embodiments, only one high voltage (HV) pin is placed within an electrostatic chuck, in other embodiments, two HV pins may be placed within the electrostatic chuck.

[0053] Also, with reference back to Figure 1A, a first radial distance between the series 106A of grooves of the middle zone 106 and the series 106B of grooves of the middle zone 106 is greater than a second radial distance between the series 106B and the series 106C of grooves of the middle zone 106. The first radial distance is greater than the second radial distance to accommodate the high voltage pin. For example, the high voltage pin is received within the opening 204 and extends through a hole formed within the portion 102 A. The hole extends in a vertical plane, along the y-axis, between the series 106A and 106B until the electrostatic electrode within the electrostatic chuck 100 is reached.

[0054] Figure 3 A is a top view of an embodiment of the electrostatic chuck 100. Figure 3A further shows a zoom-in view 302 of the dielectric layer to illustrate a high voltage pin 304, which is described above. The high voltage pin 304 is received at the opening 204 (Figure 2). For example, the first radial distance, such as a distance dl, between the series 106A and the series 106B is greater than the second radial distance, such as a distance d2, between the series 106B and the series 106C to accommodate the opening 204 and the hole for passage of the high voltage pin 304.

[0055] Also, Figure 3A shows a zoom-in view 306 to illustrate a location 308 of a temperature probe for measuring a temperature of the electrostatic chuck 100. There is a radial distance formed between the middle zone 106 and the outer-inner zone 108 to accommodate one or more temperature probes between the middle zone 106 and the outer-inner zone 108. The temperature probe measures a temperature of the electrostatic chuck 100. The location 308 is between the middle zone 106 and the outer-inner zone 108.

[0056] Figure 3 A further shows a zoom-in view 312 to illustrate that a portion 310 of a groove of the outer-outer zone 110 is linear, such as straight, instead of curved to accommodate a notch 314 of the substrate. The substrate has the notch 314 to facilitate achieving placement of the substrate in a pre-determined orientation on the electrostatic chuck 100. The portion 310 is linear, and not curved, to not interfere with the notch 314. When the portion 310 interferes with the notch 314, the substrate is not processed in a desirable manner.

[0057] In some embodiments, the high voltage pin 304 is not located in the vertical plane between the series 106A and 106B (e.g., the HV pin 304 may be arranged outside of the middle zone 106, inwardly or outwardly). In these embodiments, the first radial distance between the series 106 A and the series 106B is equal to the second radial distance between the series 106B and the series 106C. The position of the HV pin 304 is selected to optimize power delivery performance.

[0058] Figure 3B is a front view of an embodiment of the electrostatic chuck 100 to illustrate a difference between the horizontal level of the dielectric layer of the electrostatic chuck 100 and the horizontal level of the baseplate of the electrostatic chuck 100. It should be noted that a horizontal level 316 of the portion 102A of the dielectric layer is higher than a horizontal level 318 of the portion 102B of the baseplate. For example, the horizontal level 318 is below the horizontal level 316. To illustrate, the horizontal level 316 has a height greater than a height of the horizontal level 318. A height, as used herein, as measured from the x-axis in a direction of the y-axis.

[0059] Figure 3C is a side view of an embodiment of the electrostatic chuck 100 to illustrate the side surface 120. Also illustrated in Figure 3C are the portions 102A and 102B of the top surface 102 of the electrostatic chuck 100.

[0060] Figure 3D is a top view of an embodiment of the electrostatic chuck 100 to illustrate a flow of the one or more cooling gases from an opening of a groove of a series of one of the zones 104, 106, 108 to grooves of an adjacent series of grooves of the zone. Also, Figure 3D illustrates a flow of the one or more cooling gases from an opening of a groove of the series of the zone 110 to remaining portion of the groove.

[0061] The series 106A includes grooves 352A, 352B, and 352C. The grooves 352A and 352B are located adjacent to each other, such as next to each other, and the grooves 352B and 352C are located adjacent to each other. For example, there is no groove between the grooves 352A and 352B. Also, in a similar manner, the series 106B includes grooves 354A and 354B that are located adjacent to each other. The series 106C includes grooves 356A, 356B, and 356C. The grooves 356A and 356B are located adjacent to each other, such as next to each other, and the grooves 356B and 356C are located adjacent to each other. For example, there is no groove between the grooves 356A and 356B. The grooves 352A and 352B are located in the series 106A that is adjacent to the series 106B and the grooves 356A and 356B are located within the series 106C that is adjacent to the series 106B.

[0062] The one or more cooling gases are received via an opening 358 formed in a central region of the groove 354A and flow to a left portion of the groove 354A and a right portion of the groove 354A. The left portion of the groove 354A is located in a direction opposite to a direction in which the right portion of the groove 354A is located. Also, the one or more cooling gases received via the opening 358 flow from the opening 358 to a portion of the groove 352A, a portion of the groove 352B, a portion of the groove 356A, and a portion of the groove 356B.

[0063] Similarly, the one or more cooling gases are received via an opening 360 formed in a central region of the groove 354B and flow to a left portion of the groove 354B and a right portion of the groove 354B. The left portion of the groove 354B is located in a direction opposite to a direction in which the right portion of the groove 354B is located. Also, the one or more cooling gases received via the opening 360 flow from the opening 360 to the remaining portion of the groove 352B, a portion of the groove 352C, the remaining portion of the groove 356B, and a portion of the groove 356C.

[0064] In a similar manner, each of the inner zone 104 and the outer-inner zone 108 has openings for receiving the one or more cooling gases and providing the one or more cooling gases to grooves of the zone. For example, the outer-inner zone 108 has an opening 301 in a central region of a groove 362 of a series of the outer-inner zone 108. The opening 301 receives the one or more cooling gases and provides the one or more cooling gases to grooves of an adjacent series of grooves of the outer-inner zone 108.

[0065] Also, the outer-outer zone 110 includes the series of grooves and each groove in the series has an opening to allow a flow of the one or more cooling gases to portions of the groove. For example, a groove 364 of the outer-outer zone 110 having the portion 310 includes an opening 366. The one or more cooling gases that are received via the opening 366 flow towards a left portion and a right portion of the groove 364. The left portion of the groove 364 is located in a direction that is opposite to a direction in which the right portion of the groove 364 is located.

[0066] Figure 4A is a zoom-in front view of an embodiment of a portion 400 of the electrostatic chuck 100 (Figure 1A). The portion 400 includes a dielectric layer 402, such as a ceramic plate or a ceramic disc, and a baseplate 404. The baseplate 404 has the side surface 120 and the bottom surface 202 (Figure 2). A thermal coating 406, such as a ceramic coating or a coating of another dielectric, is applied to the baseplate 404 to protect the baseplate from plasma formed within a plasma chamber. For example, a thermal spray is applied to a top surface of the baseplate 404 to form the thermal coating 406 on the top surface. A top surface of the dielectric layer 402 forms the portion 102A of the top surface 102 (Figure 1A) and a top surface of the thermal coating 406 forms the portion 102B of the top surface 102. Also, a bond layer 408, such as a glue or another substance for bonding the baseplate 404 with the dielectric layer 402, is applied on a top surface of the thermal coating 406 to form a physical bond between the baseplate 404 and the dielectric layer 402. For example, the baseplate 404 is attached to the dielectric layer 402 by the bond layer 408.

[0067] Within the dielectric layer 402, an electrostatic electrode 410 is embedded. In some embodiments, the electrostatic electrode 410 is supplied with the DC power by the high voltage pin. Tn some embodiments, other power delivery conduits may be used to power the electrostatic electrode 410.

[0068] In an embodiment, the baseplate 404 with the thermal coating 406 is sometimes referred to herein as a baseplate of the electrostatic chuck 100. For example, the thermal coating 406 is thin to be an integral part of the baseplate 404 of the electrostatic chuck. To illustrate, a top surface of the baseplate having the thermal coating 406 forms the portion 102B of the top surface 102.

[0069] Figure 4B is a zoom-in view of an embodiment of a temperature probe 420 for measuring the temperature of the electrostatic chuck 100 (Figure 1). The temperature probe 420 extends vertically via the baseplate 404.

[0070] Figure 4C is a zoom-in view of an embodiment of the high voltage pin 304. The high voltage pin 304 extends vertically via the baseplate 404. High voltage power, such as DC power, is applied via the high voltage pin 304 to clamp the substrate to the portion 102 A (Figure 1A).

[0071] Figure 4D is a zoom-in view of an embodiment of a sleeve hole 440 for accommodating a lift pin for lifting the substrate from the top surface 102. The sleeve hole 440 extends vertically via the baseplate 404. The lift pin extends through the sleeve hole 440. The lift pin operates to move up to lift the substrate with respect to the top surface 102 vertically in a direction of the y-axis. The lift pin also operates to move down vertically to place the substrate to rest on the top surface 102.

[0072] Figure 4E is a side view of an embodiment of the electrostatic chuck 100 to illustrate the sleeve hole 440. A sleeve that encases the lift pin extends via the sleeve hole 440 that is located within the baseplate 404. The lift pin extends via an opening in the dielectric layer 402 towards the portion 102A of the top surface 102 to lift the substrate placed on the portion 102A to form an extended position. Also, the lift pin retracts from the extended position to be located within the sleeve hole 440 to rest the substrate on the portion 102A for processing of the substrate. It should be noted that all the zones 104, 106, 108, and 110 are situated within the dielectric layer 402, which is raised to be at the horizontal level 316. The dielectric layer 402 is raised compared to the horizontal level 318 of the portion 102B, which forms a top surface of the baseplate 404.

[0073] In an embodiment, the top surface of the baseplate 404 is the same as a top surface of the bond layer 408 (Figure 4A) when the bond layer 408 is applied to the thermal coating 406. For example, a combination of the baseplate 404, the thermal layer 406, and the bond layer 408 is sometimes referred to herein as a baseplate. To illustrate, the thermal layer 406 and the bond layer 408 are integral to the baseplate 404 to form a unitary body, referred to herein as the baseplate.

[0074] Figure 5 is a bottom view of the electrostatic chuck 100 to illustrate the opening 204 for receiving the high voltage pin 430 (Figure 4C) at the bottom surface 202.

[0075] Figure 6 is a top view of a routing layer 600 of the electrostatic chuck 100 to illustrate a routing of the one or more cooling gases that are supplied to the zones 104, 106, 108, and 110 (Figure 1A). The routing layer 600 is located within the baseplate 404 (Figure 4D) to provide paths, such as routes, to one or more cooling gases for supply to the zones 104, 106, 108, and 110.

[0076] The routing layer 600 includes an inner routing 602, a middle routing 604, and outer-inner routing 606, and an outer-outer routing 608. The middle routing 604 has a ring shape, such as a circular shape, that has a diameter greater than a diameter of a ring shape of the inner routing 602. Similarly, the outer-inner routing 606 has a ring shape that has a diameter greater than the diameter of the ring shape of the middle routing 604 and the outer-outer routing 608 has a ring shape that has a diameter greater than the diameter of the ring shape of the outer- inner routing 606. [0077] The inner routing 602 is a space formed within the routing layer 600 to route the one or more cooling gases to supply to the inner zone 104. For example, the inner routing 602 is connected to the inner zone 104. Similarly, the middle routing 604 is a space formed within the routing layer 600 to route the one or more cooling gases to supply to the middle zone 106, the outer-inner routing 606 is a space formed within the routing layer 600 to route the one or more cooling gases to supply to the outer-inner zone 108, and the outer-outer routing 608 is a space formed within the routing layer 600 to route the one or more cooling gases to supply to the outer-outer zone 110. For example, the middle routing 604 is connected to the middle zone 106, the outer-inner routing 606 is connected to the outer-inner zone 108, and the outer-outer routing 608 is connected to the outer-outer zone 110.

[0078] It should be noted that the outer-outer routing 608 has a routing extension 610, such as a space, that extends towards the outer-inner routing 606 but does not interfere with the outer- inner routing 606. For example, the routing extension 610 does not connect to the outer-inner routing 606. Also, the routing extension 610 is connected to a channel that extends from the routing extension 610 to the bottom surface 202 (Figure 2) of the electrostatic chuck 100 (Figure 1 A). The channel receives one or more cooling gases from a gas supply.

[0079] Figure 7 is a side view of an embodiment of a system 700 to illustrate a recess 702 formed within the baseplate 404. The system 700 includes the baseplate 404, the thermal coating 406, an edge ring 703, and a substrate S. The recess 702 has an opening 701 at the horizontal level 318 of the portion 102B. As an example, a diameter of the opening 701 , measured along the x-axis, is between 1.5 millimeters (mm) and 2.5 millimeters. To illustrate, the diameter of the opening 701 is 2 mm. The opening 701 is an example of any of the openings 150A through 1501 (Figure 1A). The recess 702 extends from the horizontal level 318 of portion 102B to a horizontal level 704 within the baseplate 404. The horizontal level 704 is located below the horizontal level 318. For example, the horizontal level 704 has a height that is less than a height of the horizontal level 318. The heights of the horizontal level 318 and 704 are measured from the bottom surface 202.

[0080] A chamfer 706, sometimes referred to herein as a chamfer interface, of the thermal coating 406 forms a top boundary of the recess 702. The chamfer 706 extends obliquely from the portion 102B to a horizontal level 708 below to form an internal angular surface of the thermal coating 406. For example, the chamfer 706 extends obliquely to form an acute angle, in a downward vertical direction, with respect to the horizontal level 318 of the portion 102B. The downward vertical direction is along the y-axis and extends from the horizontal level 318 to the bottom surface 202. The horizontal level 318 and above the horizontal level 704. [0081] An internal side surface 710 of the baseplate 404 is contiguous with, such as adjacent to, the chamfer 706 and extends in the vertical direction from the chamfer 706 to an internal bottom surface 712 of the baseplate 404. As an example, a length of the internal side surface 710, along the y-axis, ranges from 2.5 mm to 2.6 mm. To illustrate, the length of the internal side surface 710 is about 2.54 mm. Also, as an example, a diameter of the internal side surface 710, measured along the x-axis in the radial direction, ranges from 4.2 mm to 4.4 mm. To illustrate, the diameter of the internal side surface 710 is 4.3 mm. The internal bottom surface 712 is a horizontal surface extending along the x-axis and is contiguous with, such as adjacent to, the internal side surface 710. The internal bottom surface 712 is located at the horizontal level 704.

[0082] The recess 702 is partially bounded by the internal side surface 710, the internal bottom surface 712, and the chamfer 706. For example, the opening 701 does not enclose the recess 702 on a top side of the recess 702. The recess 702 is bounded by the internal side surface 710, the internal bottom surface 712, the chamfer 706, and the opening 701.

[0083] The edge ring 703 is placed on top of the portion 102B to cover the opening 701. For example, a bottom surface of the edge ring 703 is located adjacent to the portion 102B. As another example, the bottom surface of the edge ring 703 is located adjacent to the chamfer 706. For example, there is no other object between the edge ring 703 and the chamfer 706.

[0084] Within the recess 702, a porous plug is inserted via the opening 701. For example, the porous plug is inserted in each of the openings 150 A through 1501 (Figure 1 A). The porous plug is formed from a sintered material. For example, the porous plug is formed by taking a sheet of ceramic, cutting rods from the sheet, taking one of the rods, cutting the rod to form a plug, and coating the plug to form the porous plug. To illustrate, the porous plug is a single piece of the sintered material.

[0085] Below the recess 702, a groove 714 is formed within the baseplate 404. For example, the groove 714 is connected to the recess 702 and extends from the horizontal level 704 of the internal bottom surface 712 to the bottom surface 202. One or more cooling gases are supplied from a gas supply via the groove 714 to the recess 702. To illustrate, there is an inlet, such as one or more openings, within the internal bottom surface 712 to allow passage of the one or more cooling gases from the groove 714 to the recess 702. The one or more cooling gases flow from the internal bottom surface 712 via the sintered material of the porous plug to the opening 710 to control a temperature, such as cool, the edge ring 703.

[0086] The chamfer interface increases a standoff voltage, such as a range of voltage, between the edge ring 703 and the baseplate 404 by a pre-determined amount, such as an amount between 45% and 55%, compared to another electrostatic chuck (not shown). For example, the range of voltage increases by 50%. To illustrate, the range of voltage increases from two to four volts (V) to four to six volts. When the range of voltage is increased, a voltage threshold is not exceeded and it is difficult for a voltage breakdown to occur. The voltage breakdown negative affects processing of the substrate S. Because of the increase in the range of voltage, chances of the voltage breakdown are reduced.

[0087] Figure 8 is a diagram of an embodiment of the portion of the electrostatic chuck 100 to illustrate that an increase in a distance from a top surface 802 of the thermal coating 406 to reduce chances of breakdown of the chamfer interface. The distance from the top surface 802 situated at the horizontal level 318 is increased to form a distance 804 of the chamfer 706. As an example, the distance 804 extends obliquely along the x and y axes to form an acute angle with respect to the top surface 802 in the downward vertical direction. For example, an angle 801 formed between a line 812 extending from the chamfer 706 along the chamfer 706 forms an angle greater than 29 degrees with respect to the horizontal level 318. In the example, the angle is an example of the acute angle formed with respect to the top surface 802 in the downward vertical direction. To illustrate, the angle formed between the line 812 and the horizontal level 318 ranges from and including 29.1 degrees to 34 degrees. To further illustrate, the angle between the line 812 and the horizontal level 318 is 33.2°. The distance 804 extends until the internal side surface 710 of the baseplate 404. For example, the distance 804 ranges from and including 1 mm to 1.7 mm. To illustrate, the distance 804 ranges from and including 1.5 mm to 2 mm. To further illustrate, the distance 804 is 1 .4 millimeters. Because of the increased distance, the porous plug is taller. Also, because of increased distance, a distance from the edge ring 703 (Figure 7) to the internal side surface 710 increases. The increase in the distance from the edge ring 703 (Figure 7) to the internal side surface 710 increases a standoff voltage of the thermal coating 406 to reduce chances of voltage breakdown. The voltage breakdown results in the substrate S not being processed in a desirable manner, such as in a uniform manner or to achieve a predetermined etch rate.

[0088] Also, another chamfer 806 of the thermal coating 406 is formed. The chamfer 806 forms an obtuse angle with respect to the chamfer 706 and is adjacent to the chamfer 706. For example, the chamfer 806 is contiguous with the chamfer 706. As an example, an oblique line 803 extending upward, along the y-axis, from the chamfer 806 and in the same direction as that of a length of the chamfer 806 forms an angle ranging between 29 and 31° with respect to a bottom surface 808 of the thermal coating 406. To illustrate, the oblique line 803 forms an angle of 30° with respect to a horizontal level 810. The bottom surface 808 is adjacent to, such as contiguous with, the chamfer 806. The bottom surface 808 is horizontal and is located at the horizontal level 810, which is below the horizontal level 318 of the top surface 802. As an example, a distance between the horizontal level 810 and the horizontal level 704 ranges from 2.98 mm to 3 mm. For example, the distance between the horizontal levels 810 and 704 is 2.99 mm. The horizontal level 808 is above the horizontal level 708 formed at an intersection of the chamfers 706 and 806.

[0089] The chamfer 706 begins at the horizontal level 318 and ends at the horizontal level 708. Also, the chamfer 806 begins at the horizontal level 810 and ends at the horizontal level 708. The chamfer 806 provides a connection between the chamfer 804 and the horizontal level 810 to achieve a predetermined amount of thickness of the thermal coating 406. The thickness of the thermal coating 406 is a height of the thermal coating 406 along the y-axis. For example, a uniform thickness of the thermal coating 406 between the horizontal levels 318 and 810 is achieved with the chamfer 806.

[0090] It should be noted that there is a trade-off between the distance 804 of the chamfer 706 and a diameter of the opening 701. For example, when the distance 804 increases, the diameter of the opening 701 decreases and when the distance 804 decreases, the diameter of the opening 701 increases. The diameter of the opening 701 is of a predetermined amount to allow a flow of the one or more cooling gases received via the groove 714 to the edge ring 703 (Figure 7) to be above a predetermined threshold.

[0091] The porous plug is inserted from the opening 701 into the recess 702 to allow a flow of the one or more cooling gases from the groove 714 via the porous plug situated within the recess 702 to the edge ring 703 to control the temperature of the edge ring 703. The porous plug reduces chances of arcing of plasma. For example, without the porous plug, chances of arcing of plasma within the recess 702 increases.

[0092] Figure 9 is a diagram of an embodiment of a graph 900 to illustrate an increase in a range 902 of voltage to a range 904 of voltage. The graph 900 plots a standoff voltage, measured in kilovolts (kV), along a Y-axis of the graph 900 and a structure formed within the thermal coating 406 on an X-axis of the graph 900. Each range 902 and 904 is an example of a stand-off voltage. The range 902 is achieved when another structure is formed to be a portion of the thermal coating 406. With the increase in the range 902 to the range 904, chances of the voltage threshold being exceeded are reduced. The range 902 increases to the range 904 when the chamfer 706 (Figure 8) is fabricated to form a portion of the thermal coating 406.

[0093] Figure 10 is a diagram of an embodiment of a system 1000 to illustrate use of the electrostatic chuck 100 within a plasma chamber 1002. The system 1000 includes an RF generator (RFG) system 1004, an impedance matching circuit 1006, and the plasma chamber 1002. The system 1000 further includes a cooling gas supply system 1001 and an HV power supply 1003. An example of the RF generator system 1004 includes one or more RF generators. As an example, the impedance matching circuit 1006 includes a network of inductors or capacitors or a combination thereof. The plasma chamber 1002 includes electrostatic chuck 100, the edge ring 703, and an upper electrode 1008. The cooling gas supply system 1001 includes one or more cooling gas storages, such as containers, for storing the one or more cooling gases.

[0094] The upper electrode 1008 is located above the electrostatic chuck 100 to form a gap 1010 between the upper electrode 1008 and the electrostatic chuck 100. The edge ring 703 is placed above the portion 102B of the top surface 102 of the electrostatic chuck 100 to surround the portion 102A of the electrostatic chuck 100.

[0095] The HV power supply 1003 is coupled to the electrostatic electrode of the electrostatic chuck 100 via the high voltage pin 304 (Figure 3A). The cooling gas supply system 1001 is coupled via one or more cooling gas tubes 1005 to the electrostatic chuck 100. For example, the one or more cooling gas tubes 1005 are coupled to the inner routing 602, the middle routing 604, the outer-inner routing 606, the outer-outer routing 608 (Figure 6), and the groove 714 (Figure 7). To illustrate a first cooling gas tube is coupled to the routings 602, 604, 606, and 608 and a second cooling gas tube is coupled to the groove 714. The RF generator system 1004 is coupled via one or more RF cables 1012 to one or more inputs of the impedance matching circuit 1006. An output of the impedance matching circuit 1006 is coupled via an RF transmission line 1014 to a lower electrode embedded within the electrostatic chuck 100.

[0096] The substrate S is placed on top of the portion 102A for processing. The HV power supply 1003 supplies high voltage power via the high voltage pin 304 to the electrostatic electrode to clamp the substrate S to the portion 102A of the electrostatic chuck 100. The one or more RF generators generate one or more RF signals 1016 to supply the one or more RF signals 1016 to the impedance matching circuit 1006. The impedance matching circuit 1006 receives the one or more RF signals 1016 at its one or more inputs, and matches an impedance of a load coupled to the output of the impedance matching circuit 1006 with an impedance of a source coupled to the one or more inputs of the impedance matching circuit 1006 to provide a modified RF signal 1018 at the output. An example of the load includes the plasma chamber 1002 and the RF transmission line 1014 and an example of the source includes the one or more RF cables 1012 and the RF generator system 1004. The modified RF signal 1018 is supplied via the RF transmission line 1014 to the lower electrode.

[0097] When one or more process gases, such as an oxygen-containing gas or a fluorine-containing gas or a combination thereof, are supplied to the gap 1010 and the modified RF signal 1018 is supplied to the lower electrode, plasma is stricken or maintained within the 1010 to process the substrate S. Examples of processing the substrate S includes depositing one or more materials on the substrate S or etching the substrate S or cleaning the substrate S or a combination thereof.

[0098] While the substrate S is being processed, the one or more cooling gases are supplied from the cooling gas supply system 1001 via the one or more cooling gas tubes 1005 to the electrostatic chuck 100. For example, the one or more cooling gases are supplied via the one or more cooling gas tubes 1005 to the inner routing 602, or the middle routing 604, or the outer- inner routing 606, or the outer-outer routing 608, or the groove 714, or a combination thereof. The one or more cooling gases are supplied via the one or more cooling gas tubes 1005 to the inner routing 602, or the middle routing 604, or the outer-inner routing 606, or the outer-outer routing 608, or a combination thereof to cool the substrate S. The one or more cooling gases are supplied via the one or more cooling gas tubes 1005 to the groove 714 to cool the edge ring 703.

[0099] Embodiments described herein may be practiced with various computer system configurations including hand-held hardware units, microprocessor systems, microprocessor-based or programmable consumer electronics, minicomputers, mainframe computers and the like. The embodiments can also be practiced in distributed computing environments where tasks are performed by remote processing hardware units that are linked through a network.

[00100] In some embodiments, a controller, described herein, is a part of a system, which may be part of the above-described examples. Such systems include semiconductor processing equipment, including a processing tool or tools, chamber or chambers, a platform or platforms for processing, and/or specific processing components (a wafer pedestal, a gas flow system, etc.). These systems are integrated with electronics for controlling their operation before, during, and after processing of a semiconductor wafer or substrate. The electronics is referred to as the “controller,” which may control various components or subparts of the system or systems. The controller, depending on the processing requirements and/or the type of system, is programmed to control any of the processes disclosed herein, including the delivery of process gases, temperature settings (e.g., heating and/or cooling), pressure settings, vacuum settings, power settings, RF generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, positional and operation settings, wafer transfers into and out of a tool and other transfer tools and/or load locks coupled to or interfaced with a system.

[00101] Broadly speaking, in a variety of embodiments, the controller is defined as electronics having various integrated circuits, logic, memory, and/or software that receive instructions, issue instructions, control operation, enable cleaning operations, enable endpoint measurements, and the like. The integrated circuits include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as Application Specific Integrated Circuits (ASICs), Programmable Logic Devices (PLDs), and/or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). The program instructions are instructions communicated to the controller in the form of various individual settings (or program files), defining the parameters, the factors, the variables, etc., for carrying out a particular process on or for a semiconductor wafer or to a system. The program instructions are, in some embodiments, a part of a recipe defined by process engineers to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and/or dies of a wafer.

[00102] The controller, in some embodiments, is a part of or coupled to a computer that is integrated with, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller is in a “cloud” or all or a part of a fab host computer, which allows for remote access of the wafer processing. The computer enables remote access to the system to monitor current progress of fabrication operations, examines a history of past fabrication operations, examines trends or performance metrics from a plurality of fabrication operations, to change parameters of current processing, to set processing steps to follow a current processing, or to start a new process.

[00103] In some embodiments, a remote computer (e.g. a server) provides process recipes to a system over a network, which includes a local network or the Internet. The remote computer includes a user interface that enables entry or programming of parameters and/or settings, which are then communicated to the system from the remote computer. In some examples, the controller receives instructions in the form of data, which specify the parameters, factors, and/or variables for each of the processing steps to be performed during one or more operations. It should be understood that the parameters, factors, and/or variables are specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control. Thus as described above, the controller is distributed, such as by including one or more discrete controllers that are networked together and working towards a common purpose, such as the processes and controls described herein. An example of a distributed controller for such purposes includes one or more integrated circuits on a chamber in communication with one or more integrated circuits located remotely (such as at the platform level or as part of a remote computer) that combine to control a process on the chamber.

[00104] Without limitation, in various embodiments, example systems to which the methods are applied include a plasma etch chamber or module, a deposition chamber or module, a spin-rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing systems that is associated or used in the fabrication and/or manufacturing of semiconductor wafers.

[00105] It is further noted that in some embodiments, the above-described operations apply to several types of plasma reactor chambers, e.g., a plasma chamber including an inductively coupled plasma (TCP) reactor, a capacitively coupled plasma (CCP) reactor, a transformer coupled plasma reactor, conductor tools, dielectric tools, a plasma chamber including an electron cyclotron resonance (ECR) reactor, etc. For example, one or more RF generators are coupled to an inductor within the ICP reactor. Examples of a shape of the inductor include a solenoid, a dome-shaped coil, a flat-shaped coil, etc.

[00106] As noted above, depending on the process step or steps to be performed by the tool, the host computer communicates with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a main computer, another controller, or tools used in material transport that bring containers of wafers to and from tool locations and/or load ports in a semiconductor manufacturing factory.

[00107] With the above embodiments in mind, it should be understood that some of the embodiments employ various computer-implemented operations involving data stored in computer systems. These operations are those physically manipulating physical quantities. Any of the operations described herein that form part of the embodiments are useful machine operations.

[00108] Some of the embodiments also relate to a hardware unit or an apparatus for performing these operations. The apparatus is specially constructed for a special purpose computer. When defined as a special purpose computer, the computer performs other processing, program execution or routines that are not part of the special purpose, while still being capable of operating for the special purpose.

[00109] In some embodiments, the operations may be processed by a computer selectively activated or configured by one or more computer programs stored in a computer memory, cache, or obtained over the computer network. When data is obtained over the computer network, the data may be processed by other computers on the computer network, e.g., a cloud of computing resources.

[00110] One or more embodiments can also be fabricated as computer-readable code on a non-transitory computer-readable medium. The non-transitory computer-readable medium is any data storage hardware unit, e.g., a memory device, etc., that stores data, which is thereafter be read by a computer system. Examples of the non-transitory computer-readable medium include hard drives, network attached storage (NAS), read-only memory (ROM), random access memory (RAM), compact disc-ROMs (CD-ROMs), CD-recordables (CD-Rs), CD-rewritables (CD-RWs), magnetic tapes and other optical and non-optical data storage hardware units. In some embodiments, the non-transitory computer-readable medium includes a computer-readable tangible medium distributed over a network-coupled computer system so that the computer- readable code is stored and executed in a distributed fashion.

[00111] Although the method operations above were described in a specific order, it should be understood that in various embodiments, other housekeeping operations are performed in between operations, or the method operations are adjusted so that they occur at slightly different times, or are distributed in a system which allows the occurrence of the method operations at various intervals, or are performed in a different order than that described above.

[00112] It should further be noted that in an embodiment, one or more features from any embodiment described above are combined with one or more features of any other embodiment without departing from a scope described in various embodiments described in the present disclosure.

[00113] Although the foregoing embodiments have been described in some detail for purposes of clarity of understanding, it will be apparent that certain changes and modifications can be practiced within the scope of appended claims. Accordingly, the present embodiments are to be considered as illustrative and not restrictive, and the embodiments are not to be limited to the details given herein.

Claims

IN THE CLAIMS

1. An electrostatic chuck comprising: a top surface; a side surface oriented vertically with respect to the top surface; and a bottom surface contiguous with the side surface, wherein the top surface includes a plurality of zones for outputting one or more cooling gases, wherein at least one of the plurality of zones includes an arrangement of grooves, wherein the arrangement of grooves includes at least a first set of grooves and a second set of grooves, wherein the first and second sets of grooves are arranged in a concentric manner on the top surface, wherein the second set of grooves forms a second ring-shaped pattern with a smaller diameter than a diameter of a first ring-shaped pattern formed by the first set of grooves, wherein one or more grooves of the first set of grooves partially overlaps with two of the grooves of the second set of grooves in a radial direction along the top surface to enhance temperature uniformity during substrate processing.

2. The electrostatic chuck of claim 1, wherein the first set of grooves includes a first groove and the second set of grooves includes a second groove and a third groove, wherein the first groove extends azimuthally with respect to the second and third grooves to partially overlap, in the radial direction, with the second groove and with the third groove to achieve the temperature uniformity.

3. The electrostatic chuck of claim 1, further comprising an electrostatic electrode, wherein the arrangement of grooves includes a third set of grooves, wherein the first set of grooves is located at a first distance radially from the second set of grooves and the second set of grooves is located at a second distance radially from the third set of grooves, wherein the second distance is greater than the first distance to accommodate a high voltage pin for providing high voltage power to the electrostatic electrode.

4. The electrostatic chuck of claim 1, wherein the plurality of zones include an inner zone, a middle zone, an outer-inner zone, and an outer-outer zone, wherein the middle zone has a greater diameter than the inner zone, the outer-inner zone has a greater diameter than the middle zone, and the outer-outer zone has a greater diameter than the outer-inner zone to achieve the temperature uniformity.

5. The electrostatic chuck of claim 4, wherein the middle zone and the outer-inner zone are located at a distance from each other to accommodate a temperature probe therebetween for measuring a temperature of the electrostatic chuck.

6. The electrostatic chuck of claim 4, wherein the outer-outer zone has a third set of grooves, wherein one of the grooves of the third set has a linear portion to not interfere with a notch of a substrate over the linear portion.

7. The electrostatic chuck of claim 1, wherein the arrangement includes a third set of grooves, wherein the third set forms a third ring-shaped pattern with a smaller diameter than the diameter of the second ring-shaped pattern of the second set, wherein said each of the grooves of the second set has an opening to provide a plurality of outlets to enable a flow the one or more cooling gases, wherein the two of the grooves of the first set are configured to receive the flow the one or more cooling gases from one of the plurality of outlets and two of the grooves of the third set are configured to receive the flow the one or more cooling gases from the one of the plurality of outlets.

8. The electrostatic chuck of claim 7, wherein each of the plurality of outlets is configured to accommodate a porous plug.

9. The electrostatic chuck of claim 1, wherein the top surface has a portion, further comprising: a ceramic plate; and a baseplate, wherein the portion of the top surface is of the ceramic plate, the side surface is of the baseplate, and the bottom surface is of the baseplate, wherein the baseplate has a top surface having a plurality of outlets for providing one or more cooling gases, wherein the top surface of the baseplate surrounds the ceramic plate, wherein the top surface of the baseplate is at a horizontal level below a horizontal level of the top surface of the ceramic plate.

10. The electrostatic chuck of claim 9, wherein the baseplate includes a plurality of recesses having the plurality of outlets, wherein each of the plurality of recesses is partially bounded by an internal bottom surface of the baseplate, an internal side surface of the baseplate, and an internal angular surface of the baseplate, wherein the internal angular surface is adjacent to the internal side surface, and the internal side surface is adjacent to the internal bottom surface, wherein the top surface of the baseplate is coated with a thermal spray to form a thermal interface, wherein the internal angular surface has a length ranging from and including 1.5 millimeters to 2 millimeters to reduce chances of breakdown of the thermal interface, wherein the length extends from a top surface of the thermal interface to the internal side surface.

11. The electrostatic chuck of claim 1, wherein the plurality of zones include an inner zone, a middle zone, an outer-inner zone, and an outer-outer zone, the electrostatic chuck further comprising a plurality of lift pins located between the outer-inner zone and the middle zone for lifting a substrate.

12. The electrostatic chuck of claim 1, further comprising a third set of grooves that form a third ring-shaped pattern with a smaller diameter than the diameter of the second ringshaped pattern of the second set, the grooves of the first set are equal in number to the grooves of the second set, and the grooves of the third set are equal in number to the grooves of the second set.

13. The electrostatic chuck of claim 1, wherein the plurality of zones include an inner zone, a middle zone, an outer-inner zone, and an outer-outer zone, wherein the plurality of zones include an inner zone, a middle zone, an outer-inner zone, and an outer-outer zone, the electrostatic chuck further comprising a raised barrier formed between the outer-inner zone and the outer-outer zone, wherein the raised barrier creates a separation between the one or more cooling gases that are output from the outer-inner zone and the one or more cooling gases that are output from the outer-outer zone to facilitate controlling a temperature of the substrate.

14. A plasma chamber comprising: an upper electrode; an electrostatic chuck located below the upper electrode, wherein the electrostatic chuck includes: a top surface; a side surface oriented vertically with respect to the top surface; and a bottom surface contiguous with the side surface, wherein the top surface includes a plurality of zones for outputting one or more cooling gases, wherein at least one of the plurality of zones includes an arrangement of grooves, wherein the arrangement of grooves includes at least a first set of grooves and a second set of grooves, wherein the first and second sets of grooves are arranged in a concentric manner on the top surface, wherein the second set of grooves forms a second ring-shaped pattern with a smaller diameter than a diameter of a first ring-shaped pattern formed by the first set of grooves, wherein one or more grooves of the first set of grooves partially overlaps with two of the grooves of the second set of grooves in a radial direction along the top surface to enhance temperature uniformity during substrate processing.

15. The plasma chamber of claim 14, wherein the first set of grooves includes a first groove and the second set of grooves includes a second groove and a third groove, wherein the first groove extends azimuthally with respect to the second and third grooves to partially overlap, in the radial direction, with the second groove and with the third groove.

16. The plasma chamber of claim 14, wherein the electrostatic chuck includes an electrostatic electrode, wherein the arrangement of grooves includes a third set of grooves, wherein the first set of grooves is located at a first distance radially from the second set of grooves and the second set of grooves is located at a second distance radially from the third set of grooves, wherein the second distance is greater than the first distance to accommodate a high voltage pin for providing high voltage power to the electrostatic electrode.

17. The plasma chamber of claim 14, wherein the plurality of zones include an inner zone, a middle zone, an outer-inner zone, and an outer-outer zone, wherein the middle zone has a greater diameter than the inner zone, the outer-inner zone has a greater diameter than the middle zone, and the outer-outer zone has a greater diameter than the outer-inner zone.

18. A plasma system comprising: a radio frequency (RF) generator configured to generate an RF signal; an impedance matching circuit coupled to the RF generator to receive the RF signal, wherein the impedance matching circuit receives the RF signal to output a modified RF signal; and a plasma chamber coupled to the impedance matching circuit, wherein the plasma chamber includes an electrostatic chuck, wherein the electrostatic chuck includes: a top surface; a side surface oriented vertically with respect to the top surface; and a bottom surface contiguous with the side surface, wherein the top surface includes a plurality of zones for outputting one or more cooling gases, wherein at least one of the plurality of zones includes an arrangement of grooves, wherein the arrangement of grooves includes at least a first set of grooves and a second set of grooves, wherein the first and second sets of grooves are arranged in a concentric manner on the top surface, wherein the second set of grooves forms a second ring-shaped pattern with a smaller diameter than a diameter of a first ring-shaped pattern formed by the first set of grooves, wherein one or more grooves of the first set of grooves partially overlaps with two of the grooves of the second set of grooves in a radial direction along the top surface to enhance temperature uniformity during substrate processing.

19. The plasma system of claim 18, wherein the first set of grooves includes a first groove and the second set of grooves includes a second groove and a third groove, wherein the first groove extends azimuthally with respect to the second and third grooves to partially overlap, in the radial direction, with the second groove and with the third groove.

0. The plasma system of claim 18, wherein the electrostatic chuck includes an electrostatic electrode, wherein the arrangement of grooves includes a third set of grooves, wherein the first set of grooves is located at a first distance radially from the second set of grooves and the second set of grooves is located at a second distance radially from the third set of grooves, wherein the second distance is greater than the first distance to accommodate a high voltage pin for providing high voltage power to the electrostatic electrode.