WO2025110483A1 - Carbon nanotube and carbon black composite network-type silicon negative electrode material for lithium-ion secondary battery - Google Patents
Carbon nanotube and carbon black composite network-type silicon negative electrode material for lithium-ion secondary battery Download PDFInfo
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Definitions
- the present invention relates to a silicon negative electrode material for a lithium ion secondary battery, which comprises a plate-shaped silicon particle, an oxide layer, a carbon-based multilayer structure, and carbon nanotubes.
- lithium-ion secondary batteries which are the batteries of electric vehicles.
- Research is being conducted in various fields to improve the performance of lithium-ion secondary batteries, including changes in materials and structures, and in particular, research and development on silicon as a negative electrode material is active.
- the typical anode material for lithium-ion secondary batteries is graphite-based anode material, and it is used in most electric vehicles.
- graphite-based anode material due to the nature of the material, there are clear limitations in terms of performance improvement.
- silicon-based anode materials have a capacity per unit weight that is about 10 times higher than that of graphite-based anode materials, which can significantly increase the driving range of electric vehicles and also has the advantage of being advantageous for fast charging.
- silicon anode materials are currently only used in some cases along with carbon anode materials.
- the biggest problem with silicon anode materials is the volume expansion that occurs during repeated charging and discharging. Due to the atomic structure of silicon, four lithium ions combine and leave during charging and discharging, and as this process is repeated, the volume expands by 2 to 3 times. After the volume expansion, the silicon anode material may not return to its original state, and in this case, the electrical connection with the electrolyte may be lost due to cracks in the anode or separation of the anode material.
- the present invention solves problems such as volume expansion, reduced charge/discharge efficiency, and short lifespan that occur in silicon anode materials, and also solves problems such as recycling of discarded silicon materials and increased costs due to the use of silicon materials by using waste silicon kerf as a silicon raw material.
- the present invention provides a silicon anode material for a lithium secondary battery including a platelet silicon aggregate formed by agglomeration of a plurality of platelet silicon complexes, wherein the platelet silicon complex includes an oxide layer formed by oxidizing the surface of platelet silicon particles, a silicon carbide layer formed on the outer surface of the oxide layer, a plurality of carbon nanotubes formed on the surface of the silicon carbide layer and bonded to form a mesh network structure, and a carbon black layer coating the silicon carbide layer and the plurality of carbon nanotubes formed on the surface and bonded to form a mesh network structure.
- carbon nanotubes that are combined to form a mesh-like network structure can connect a plurality of adjacent plate-shaped silicon complexes.
- the silicon carbide layer can be formed by oxidizing the surface of plate-shaped silicon particles, and having a plurality of carbon nanotubes form a mesh network structure on the surface of the oxide layer, and some of the oxygen in the oxide layer can be replaced with carbon.
- the silicon carbide layer and the carbon black layer can be formed continuously in a single heating process.
- the carbon nanotubes may have an average diameter of 1.0 to 15 nm.
- the plate-like silicon aggregate may be in a spherical or granule shape.
- the plate-shaped silicon aggregates may have an average diameter of 2 to 50 ⁇ m.
- the silicon negative electrode material for a lithium secondary battery of the present invention may further contain graphite.
- the present invention can provide an anode comprising the silicon anode material for a lithium secondary battery of the present invention.
- the present invention can provide a lithium secondary battery including a negative electrode according to the present invention.
- the silicon anode material for a lithium secondary battery of the present invention forms an oxide layer, a silicon carbide layer, and a carbon black layer on plate-like silicon, and includes carbon nanotubes capable of imparting electrical conductivity between silicon composite particles, thereby imparting constant electrical conductivity even when the volume of the silicon anode material changes, thereby enabling uniform charging and discharging, and preventing loss of electrical conductivity of individual composite particles, thereby significantly improving the lifespan of the silicon anode material.
- waste silicon cuff as a raw material, it is possible to solve the problem of recycling of discarded silicon materials and increased costs due to the use of silicon materials.
- FIG. 1 is a photograph showing plate-shaped silicon particles used as a silicon anode material raw material for a lithium secondary battery according to one embodiment of the present invention.
- Figure 2 shows a cross-sectional structure of a silicon negative electrode material for a lithium battery according to one embodiment of the present invention.
- FIG. 3 is a photograph showing the shape of a plate-shaped silicon aggregate formed after drying a mixed dispersion in which plate-shaped silicon particles having a silicon oxide layer formed thereon are mixed with a carbon nanotube dispersion during the manufacturing process for a silicon anode material for a lithium secondary battery according to one embodiment of the present invention.
- Figure 4 is an enlarged photograph of the plate-shaped silicon agglomerate photograph of Figure 3, showing a plurality of carbon nanotubes that are bonded to form a mesh-like network structure on the surface of the silicon oxide layer and are connected across the surfaces of adjacent composite particles.
- Figure 5 is an enlarged photograph of the photograph in Figure 4, showing a structure in which carbon nanotubes cover about 25% of the surface of the silicon oxide layer and connect adjacent silicon complexes.
- Figure 6 shows a photograph of a plate-shaped silicon aggregate in which the plate-shaped silicon aggregate of Figure 3 was carbonized to form a carbon black layer.
- Figure 7 is an enlarged photograph of the plate-shaped silicon agglomerate of Figure 6, showing a silicon carbide layer formed from a silicon oxide layer and carbon nanotubes coated with a carbon black layer.
- Figure 8 is a flow chart schematically illustrating a method for manufacturing a silicon negative electrode material for a lithium ion secondary battery according to one embodiment of the present invention.
- Figure 9 is a graph of the results of a charge/discharge test of a half-cell according to an embodiment and a comparative example of the present invention.
- the present invention can provide a silicon anode material for a lithium secondary battery including a plate-shaped silicon aggregate formed by agglomeration of a silicon composite including a silicon oxide layer, a silicon carbide layer, a plurality of carbon nanotubes bonded to plate-shaped silicon particles and forming a mesh-like network structure, and a carbon black layer coating the silicon carbide and carbon nanotubes.
- the plate-shaped silicon composite may include an oxide layer formed by oxidizing the surface of plate-shaped silicon particles, a silicon carbide layer formed on the outer surface of the oxide layer, a plurality of carbon nanotubes formed in a mesh-like network structure on the surface of the silicon carbide layer and bonded thereto, and a carbon black layer coating the plurality of carbon nanotubes formed in a mesh-like network structure with the silicon carbide layer and bonded thereto.
- the plate-like silicon particles may be manufactured from waste silicon kerf, and the plate-like silicon particles may have an average thickness of 10 to 100 nm and an average length of 10 ⁇ m or less, preferably 1 to 10 ⁇ m.
- the average thickness of the plate-like silicon particles is less than 10 nm, so that too much part is lost during the formation of an oxide layer, so that the initial capacity may not even be 30% of the amount before treatment, and when the average thickness exceeds 100 nm, the ratio of the central silicon layer may be higher than 80%, so that the performance improvement effect may not be significant.
- the average length of the plate-like silicon particles exceeds 10 ⁇ m
- a lot of empty space is formed between the graphite and the plate-like silicon aggregate according to the present invention, so that the porosity in the same space increases and the filling rate decreases, so that the discharge capacity in the same volume may drop significantly.
- the waste silicon kerf used in the present invention can be utilized as generated in the process of thinly slicing a lump of metallic silicon to obtain a silicon wafer in the solar cell industry or the semiconductor industry.
- the waste silicon kerf is high-purity silicon with a purity of 99.9999999% to 99.99999999% used in the solar cell industry or the semiconductor industry, and since a wire saw, which is a wire-shaped saw, is used, it can be separated into a plate-shaped material with a nano-thickness, and this can be used as an excellent raw material for an anode active material for a lithium secondary battery as a high-purity plate-shaped silicon particle.
- the plate-shaped silicon particles may be powder particles formed in a plate shape, and may be formed from waste silicon kerfs (cutting fines) generated in the process of thinly slicing a silicon ingot for a solar cell or a semiconductor.
- waste silicon kerfs cutting fines
- the diamond wire saw is a method of cutting silicon ingots using water or diethylene glycol as a lubricant by randomly embedding diamond particles on the surface of a carbon steel wire called a piano wire of about 50 ⁇ m.
- Silicon ingots include single-crystal ingots and polycrystalline ingots, and all of the cutting fines have the advantage of being suitable as the plate-shaped silicon particles of the present invention.
- the silicon oxide layer is formed by oxidizing the surface of plate-shaped silicon particles obtained from waste silicon cuffs, and the bonding speed between lithium and plate-shaped silicon particles is slowed down through the oxide layer, thereby dramatically improving the charge/discharge life.
- the oxide layer may further oxidize a natural oxide layer naturally formed on the surface of the plate-like silicon particles to form a thicker oxide layer, and the average thickness of the oxide layer may be 2 to 10 nm.
- the average thickness of the oxide layer is less than 2 nm, an uneven oxide layer in the shape of dots may be formed on the surface of the plate-like silicon particles, and a large number of non-oxidized portions on the surface of the plate-like silicon particles occur between the dot-like oxide layers, so that the effect of improving the life performance due to the uniform oxide layer may not be preferably exhibited.
- the oxide layer exceeds 10 nm, the irreversible capacity, which is the main reason for the decrease in the initial discharge capacity, may significantly increase by more than 30%, which may cause severe lithium consumption.
- the silicon carbide layer can be formed by substituting some of the oxygen in the silicon oxide layer with carbon through reduction and carbonization starting from the outer surface of the silicon oxide layer so as to surround the silicon oxide layer.
- the silicon oxide layer is amorphous and forms a passage for lithium and electrons to move while increasing the irreversible capacity when combined with lithium, but the silicon carbide layer reduces the increase in irreversible capacity to less than 1/10 of the oxide layer and forms a passage for lithium and electrons while controlling the diffusion or movement speed of lithium, thereby further improving the high-speed charge/discharge performance and lifespan.
- the thickness of the silicon carbide layer may be 1 to 5 nm. If it is less than 1 nm, the silicon carbide layer is formed in an uneven dot shape, so that the exposed area of the oxide layer increases, making it difficult to expect an improvement in life performance. If it is more than 5 nm, the discharge speed of lithium is significantly reduced compared to when there is no silicon carbide layer, so that the high-speed charge/discharge performance may be significantly reduced.
- carbon nanotubes are bonded to the outer surface of the silicon carbide layer, and a plurality of carbon nanotubes can form a mesh-like network structure.
- the carbon nanotubes that form a mesh-like network structure on the outer surface of the silicon carbide layer can connect a plurality of adjacent plate-like silicon composites.
- the carbon nanotubes can be bonded such that one or more strands span the surfaces of a plurality of adjacent silicon carbide layers, and the plurality of carbon nanotubes bonded across the surfaces of the plurality of adjacent silicon carbide layers in this way can play a role in imparting electrical conductivity between the plate-like silicon composite particles.
- the carbon nanotubes bonded to the surface of the silicon carbide layer can improve the uniform charge and discharge speeds and the life of the anode.
- the central plate-like silicon expands by more than twice in volume when lithium is charged and returns to the original volume when discharged, and the carbon nanotubes provide equal electrical conductivity both when the volume is increased and when it returns to the original volume, thereby helping to maintain a uniform charge and discharge speed and preventing individual particles of the plate-like silicon composite from losing electrical conductivity and no longer being able to perform the charge and discharge role, thereby extending the life of the silicon anode.
- the carbon nanotubes can cover 5 to 30% of the surface area of the silicon carbide layer, and the outer surface of the silicon carbide layer in the region where the carbon nanotubes and the carbon nanotubes are not combined is coated with a carbon black layer, thereby imparting high electrical conductivity to each individual particle of the plate-like silicon composite, while further improving the electrical conductivity between the plate-like silicon composite and the carbon nanotubes.
- the carbon nanotubes may have an average diameter of 1.0 to 15 nm, preferably 6 to 12 nm, and a length of 50 to 300 ⁇ m, preferably 100 to 300 ⁇ m.
- 1.0 nm is the minimum average diameter of the carbon nanotubes, and if the diameter of the carbon nanotubes exceeds 15 nm, the flexibility may decrease and the adhesion to the surface of the oxide layer formed on the plate-like silicon particles may decrease.
- the length of the carbon nanotubes is short, the effect of improving the electrical conductivity between the plate-like silicon composite particles by the carbon nanotubes may decrease, and if the length of the carbon nanotubes is long, the uniformity of the components in the carbon nanotube dispersion used in the process of manufacturing the silicon anode material may decrease, or the size or shape of the aggregated particles of the plate-like silicon composites may become excessively non-uniform.
- the carbon black layer is a layer formed by wrapping and coating a silicon carbide layer and carbon nanotubes, and plays a role in maintaining the formation amount and formation relationship of SEI (Solid electrolyte interface), which is an interface between graphite and an electrolyte (or electrolyte) in a conventional lithium ion secondary battery, and can eliminate the inconvenience of having to change the electrolyte (or electrolyte) due to a change in material, and can improve electrical conductivity together with carbon nanotubes.
- SEI Solid electrolyte interface
- the carbon black layer may have an average thickness of 3 to 20 nm.
- the average thickness of the carbon black layer is less than 3 nm, the carbon coating layer is formed unevenly in the form of dots on the surface, so that many uncoated areas occur, and thus the lifespan improvement effect may not be significant.
- the average thickness exceeds 20 nm, excessive coating may increase the number of pores inside the carbon coating layer, so that lithium fills the pores and does not escape again, which may significantly increase the irreversible capacity.
- the plate-like silicon aggregates formed up to the carbon black layer may preferably have an average diameter of 2 to 50 ⁇ m, more preferably 2 to 30 ⁇ m, and most preferably 2 to 25 ⁇ m. If the average diameter of the plate-like silicon aggregates is small, it may be difficult to homogeneously mix with commercial graphite particles used in lithium ion secondary batteries, and if the average diameter of the plate-like silicon aggregates is large, many empty spaces may be formed when mixed with graphite, which may reduce the filling rate of the electrode.
- the plate-like silicon aggregates having a preferred size range are particles having a similar aspect ratio to commercial graphite, and thus have the advantage of being able to utilize a process using an existing dry milling machine or dry high-speed rotary mixer as is without any special process design change when mixed with graphite.
- the silicon anode material of the present invention may further include graphite mixed with the plate-shaped silicon aggregate, and the graphite may improve the charging capacity and lifespan of the battery.
- the graphite particles may have a size of 10 to 30 ⁇ m, preferably 12 to 26 ⁇ m, and may not be particularly limited as long as it is within the size range of commercial graphite particles used in lithium ion secondary batteries.
- the platelet silicon aggregate and the graphite may be mixed in a weight ratio of 1 to 20:80 to 99, more preferably 5 to 15:85 to 90.
- the content of the platelet silicon aggregate is lower than 1 wt%, the effect of increasing the charge capacity of the silicon anode material due to mixing of graphite falls within the charge capacity deviation, making it difficult to expect the effect due to the graphite, and when it exceeds 20 wt%, when charging lithium into the anode, the thickness of the entire electrode increases by more than 30% compared to when only graphite is used, so that the binder cannot withstand it, and cracks may occur at the connection between the copper current collector and the silicon composite, which may rapidly reduce the charge/discharge life.
- the silicon negative electrode material according to the present invention can be manufactured according to the following manufacturing method, which will be described in detail with reference to the drawings.
- the present invention can provide a method for manufacturing a silicon anode material for a lithium ion secondary battery, including a step of forming an oxide layer by oxidizing the surface of platelet silicon particles to form an oxide layer, a step of preparing a carbon nanotube dispersion by mixing carbon nanotubes, a binder, and a solvent, a step of preparing a mixed dispersion by dispersing platelet silicon particles, in which an oxide layer is formed in the oxide layer forming step, in the carbon nanotube dispersion, a step of drying the mixed dispersion to form a first platelet silicon composite and a first platelet silicon aggregate which is an aggregate thereof, in which a plurality of carbon nanotubes are combined to form a mesh network structure on the surface of the oxide layer of the platelet silicon particles, a carbonization step of carbonizing the outer shell of the silicon oxide layer of the first platelet silicon composite to form a silicon carbide layer, and a step of manufacturing a second platelet silicon composite and a second platelet silicon aggregate which is an aggregate
- the plate-shaped silicon aggregate included in the silicon anode material of the present invention is formed by aggregation and bonding of plate-shaped silicon complexes, and the raw material of the plate-shaped silicon complex can use plate-shaped silicon particles (11) obtained from waste silicon kerf.
- the plate-shaped silicon particles as the raw material are bent and rolled when a strong force is applied during the cutting process, so that silicon is separated from a single crystal into a plate shape, and can be made into a form in which many fine single crystals are weakly attached. Accordingly, the plate-shaped silicon particles can be made into a state more suitable for the anode material through a crushing pretreatment and used.
- the pretreatment of the plate-shaped silicon particles can be performed by wet milling and drying processes, and methods for wet milling the plate-shaped silicon may include a bead mill (ball mill), ultrasonic dispersion, and high-pressure homogenizer dispersion.
- the bead mill method is a method in which plate-shaped silicon particles are mixed in water or an organic solvent in a range of 5 to 30 wt%, and then rotated together with zirconia or alumina beads in a zirconia or alumina container to crush the particles by frictional force and impact force between the balls.
- the bead mill use beads having a diameter of 0.5 to 3 mm and rotate at 1,000 to 5,000 rpm based on a container diameter of 100 mm to crush.
- the diameter of the beads is less than 0.5 mm, the impact force may be weak and crushing may hardly occur, and if it exceeds 3 mm, the number of beads may be too small, which may reduce the probability of collision with the plate-shaped silicon particles, and thus the crushing time may become unnecessarily long.
- the ultrasonic dispersion method is a method in which an amplifying horn and a vibrating horn are attached to an ultrasonic vibrator to apply ultrasonic vibration to the solution to disperse or destroy the grains in the solution. It is preferable that ultrasonic dispersion process plate-shaped silicon particles under the conditions of a frequency of 20 to 35 kHz, an amplitude of 20 to 200 ⁇ m, and a vibrator power consumption of 200 W or more.
- ultrasonic dispersion is possible by mixing plate-shaped silicon particles in water or an organic solvent in a range of 30 wt% or less, and then receiving ultrasonic vibrations from a plurality of vibrators while passing through a path in which a plurality of vibrators are arranged in a row, so that crushing is possible.
- the high-pressure homogenizer is a device that applies pressure using a pump to disperse or destroy the powder in the solution by passing the solution through a micro-nozzle in the opposite direction.
- a high-pressure homogenizer can be used in a way that combines collisions, such as a method of passing through a fine nozzle and then colliding with a diamond plate, a method of passing the nozzle in both directions and colliding the solutions with each other, and a method of mixing the plate-shaped silicon particles in water or an organic solvent in a range of 30 wt% or less using a high-pressure homogenizer dispersion method to obtain plate-shaped silicon particles suitable for the silicon anode material according to the present invention, and then applying pressure of 500 bar or more to pass through a fine nozzle of 50 to 200 ⁇ m and colliding with or between diamond plates may be used.
- the viscosity may become too high to be easily injected into the fine nozzle, and if the pressure is less than 500 bar, the collision energy may be weak and crushing may hardly occur, and if the fine nozzle diameter is less than 50 ⁇ m, frequent nozzle layering may occur, and if it exceeds 200 ⁇ m, the collision energy may be too weak and crushing may hardly occur.
- the plate-shaped silicon particles prepared according to the above pretreatment can be used to manufacture the silicon negative electrode material desired in the present invention according to the flow chart of Fig. 8, which is an example of the present invention.
- the plate-shaped silicon particles obtained from any one of a bead mill, a disperser, and a homogenizer may be preferably recovered in a dried powder state according to the silicon cuff drying step (S110).
- various devices having moisture and organic solvent vaporization functions can be used as the drying device, but it is preferable to use a spray dryer or a disk dryer.
- the spray dryer is a device that disperses a dispersion solution containing crushed plate-shaped silicon particles into the air through a spray nozzle or a rotating disk nozzle (atomizer) and injects a heated gas to rotate around the nozzle so that the solution is dried in a scattered state, and thus has the advantage of obtaining a dry powder having a low apparent density.
- the disk dryer has the advantage of high thermal efficiency and has the advantage of high thermal efficiency in that it gradually drops a dispersion solution containing crushed plate-shaped silicon particles onto a heated rotating disk to dry them, and then scrapes the crushed and dried plate-shaped silicon particles, which are the dry residue, with a ceramic knife to recover them.
- the plate-shaped silicon particles obtained after the silicon cuff drying step (S110) are in a state in which moisture and lubricant in the waste silicon cuff are removed, but a silicon cuff disintegration step (S120) can be performed to form a space between the plate-shaped silicon particles for easy reaction with gas in a post-process.
- the plate-shaped silicon particles obtainable by the silicon cuff disintegration and drying step have an apparent density of 1 to 2 g/cm2, and by disintegrating at 3,000 rpm in air, plate-shaped silicon particles having an apparent density of 0.1 to 0.4 g/cm2 can be obtained, and the plate-shaped silicon particles obtained through the disintegration step can have an average distance between particles that is 3 to 10 times greater than that of the plate-shaped silicon particles obtained through the disintegration and drying steps, so that plate-shaped silicon particles (11) in a state in which an oxide layer is formed more uniformly, as shown in FIG. 1, can be obtained.
- the first plate-shaped silicon composite is a composite in which a plurality of carbon nanotubes form a mesh network structure on the surface of an oxide layer formed on plate-shaped silicon particles having an oxide layer formed thereon
- the second plate-shaped silicon composite is a composite particle in which a silicon carbide layer and a carbon black layer are formed on the first plate-shaped silicon composite, and a cross-section thereof can be expressed as a structure as shown in FIG. 2.
- a first plate-shaped silicon composite is aggregated and connected to form a first plate-shaped silicon aggregate, and the first plate-shaped silicon aggregate can form a second plate-shaped silicon aggregate through the steps of forming a silicon carbide layer and coating a carbon black.
- the second plate-shaped silicon aggregate can be a composite in which a silicon carbide layer and a carbon black layer are formed on the first plate-shaped silicon composite, and the second plate-shaped silicon composite can be in a state in which the second plate-shaped silicon composite is aggregated and connected.
- the silicon anode material targeted in the present invention is an anode material including a second plate-shaped silicon aggregate, and the plate-shaped silicon composite and the aggregate thereof will be described in more detail below, starting with the oxidation layer formation step (S130).
- the oxide layer formation step (S130) may be a step of forming a silicon oxide layer (12) on the outer surface of the silicon particle by oxidizing the surface of the plate-shaped silicon particle (11).
- the step of forming an oxide layer may be performed by using a rotary kiln, injecting an oxidizer into the plate-shaped silicon particles, and then heating at 700 to 1,100°C for 5 to 30 minutes. If the heating temperature is less than 700°C, the formation speed of the oxide layer may be too slow, so that the reaction time may become excessively long, and thus the oxide layer may not be formed entirely or may be difficult to form with a desired thickness. In addition, if the heating temperature exceeds 1,100°C, the plate-shaped silicon particles may be damaged by the excessive temperature or the process cost may unnecessarily increase, which may be inefficient.
- the rotary kiln uses a continuous heating furnace, it can shorten the working time with excellent heat efficiency, and the rotary kiln can be composed of an inlet for injecting the material to be treated into the kiln body, a heat treatment section having a kiln body for heating, and a discharge section for discharging the heated material to be treated. Since the material to be treated is continuously mixed and moved in the rotary kiln, a uniform and thick oxide layer is formed, which can reduce the difference in the oxide layer ratio between particles.
- the oxidizing agent used in the oxidation layer formation step (S130) may be at least one of oxygen, water, and hydrogen peroxide, and the heating temperature may be controlled depending on the type of the oxidizing agent.
- hydrogen peroxide is used as the oxidizing agent, heating may be performed at 700 to 1,100°C, and when oxygen is used as the oxidizing agent, heating may be performed at 900 to 1,100°C.
- the step of preparing a mixed dispersion by mixing platelet silicon particles having a silicon oxide layer formed thereon into a carbon nanotube dispersion can be performed by a rotary homogenizer or an ultrasonic disperser at 3,000 rpm or higher, and the degree of dispersion may be preferably a degree of dispersion in which 5% or less of sediment is generated after 1 hour from the start of sedimentation at a height of 10 cm in a vibration-free state at room temperature.
- a carbon nanotube dispersion can be prepared by homogeneously mixing carbon nanotubes, a polymer binder, and a solvent.
- the polymer binder is a component that stabilizes the dispersion state of carbon nanotubes in the carbon nanotube dispersion and helps the attachment of the carbon nanotubes to an oxide layer during drying.
- At least one organic polymer selected from the group consisting of aqueous polymers such as polyvinylacetate (PVA), polynylpyrrolidone (PVP), ethylene vinyl acetate (EVA), and thermoplastic polyurethane (TPU) can be used.
- the polymer binder can be used in a weight ratio of carbon nanotubes: polymer binder of 1:0.5 to 3, preferably 1:0.5 to 2.5, and when the content of the binder is low, a decrease in the bonding of carbon nanotubes may occur, and when the content of the binder is high, aggregation of carbon nanotubes may occur.
- the solvent that can be used is preferably water, distilled water, purified water, etc.
- a mixed dispersion in which plate-shaped silicon particles having a silicon oxide layer formed thereon are dispersed in a carbon nanotube dispersion may contain 2 to 15 parts by weight of carbon nanotubes relative to 100 parts by weight of the plate-shaped silicon particles having a silicon oxide layer formed thereon. If the content of the carbon nanotubes is small, it may be difficult to cover the surface of the plate-shaped silicon composite to a sufficient extent for improving electrical conductivity, and if the content of the carbon nanotubes is large, the surface area of the plate-shaped silicon composite may be covered too widely, so that the effect of improving electrical conductivity may not be significant despite an increase in the content of the carbon nanotubes.
- a polymer binder may be contained in an amount of 5 to 15 parts by weight relative to 100 parts by weight of the plate-shaped silicon particles, and a solvent may be contained in an amount of 900 to 1,000 parts by weight relative to 100 parts by weight of the plate-shaped silicon composite.
- the dispersion drying step (S150) is a step of drying the mixed dispersion, and may include a step of manufacturing a first plate-shaped silicon aggregate.
- the first plate-shaped silicon aggregate is a particle formed by agglomeration and bonding of a first plate-shaped silicon complex
- the first plate-shaped silicon complex is a complex in which a plurality of carbon nanotubes (14) form a mesh network structure on the surface of the oxide layer in plate-shaped silicon particles on which a silicon oxide layer (12) is formed and are bonded by a polymer binder.
- drying may be preferably disk drying and spray drying.
- Disk drying is a method in which a dispersion is poured onto a high-temperature rotating circular disk and the dried powder is scraped off with a scraper
- spray drying is a method in which a dispersion is dropped onto a sprayer or a rotating disk to spread small droplets and blown with high-temperature gas so that the particles are suspended in the air and dried. More preferably, it is preferable to use spray drying to produce first plate-shaped silicon aggregate particles having a spherical or nearly spherical shape, a distorted spherical shape, or the like granule shape with fewer angular parts, as shown in the photograph of Fig. 3.
- the size of the particles after spray drying or the first plate-shaped silicon aggregates crushed after disk drying may have an average diameter of 2 to 50 ⁇ m, preferably 2 to 25 ⁇ m. If the size of the aggregate is small, it may be difficult to uniformly disperse it when mixed with graphite particles, and if it is too large, many empty spaces may be formed when mixed with graphite, which may reduce the filling rate of the electrode.
- a first platelet silicon composite and a first platelet silicon aggregate including the same are manufactured, in which a plurality of carbon nanotubes are bonded to form a mesh network structure on the surface of an oxide layer of platelet silicon particles on which an oxide layer is formed by disk drying or spray drying of a mixed dispersion.
- the structure of the first platelet silicon composite can be clearly confirmed through FIGS. 4 and 5, which are enlarged views of the first silicon aggregate formed as in FIG. 3.
- the carbon nanotubes can form an irregular mesh network structure by crossing and bonding to each other on the surface of the silicon oxide layer by a polymer binder, and can be bonded to form a mesh network structure that covers about 5 to 30% of the surface area of the silicon oxide layer of the first platelet silicon composite, as shown in FIG. 5.
- the carbon nanotubes can form a physical electrical conduction path between the composite particles by connecting a plurality of adjacent first platelet silicon composites, as shown in FIGS. 4 and 5, thereby further improving the electrical conductivity of the cathode.
- the silicon carbide forming (S160) step may include a carbonization step of forming a silicon carbide layer (13) on the outer surface of a silicon oxide layer (12) from a carbon source.
- the silicon carbide layer is a layer having electrically conductive characteristics and may be formed by substituting some of the oxygen in the silicon oxide layer with carbon from the surface of the silicon oxide layer of the first plate-like silicon composite toward the inside, and more specifically, may be formed by substituting two oxygen atoms in the silicon oxide layer with one carbon.
- a silicon carbide layer can be formed by passing first plate-shaped silicon composite particles coated with carbon nanotubes and a polymer binder dispersant through a kiln heated to 900 to 1100° C. In the kiln heated to a temperature of 900° C.
- the polymer binder of the first plate-shaped silicon composite decomposes to generate hydrocarbon gas, some of which forms residual carbon, and the carbon generated by the decomposition of the residual carbon and hydrocarbon gas is substituted with oxygen in the silicon oxide layer to form a silicon carbide layer.
- oxygen is substituted with carbon, a silicon carbide layer can be formed very quickly from the surface of the silicon oxide layer to a depth of 5 nm toward the inner surface.
- carbon nanotubes (14) forming a mesh network structure as shown in the structure of FIG. 2 can be bonded to the outer surface of the silicon carbide layer (13). That is, as oxygen in the oxide layer is replaced with carbon, a silicon carbide layer is also formed at the interface between the oxide layer and the carbon nanotubes bonded to the oxide layer.
- a second plate-shaped silicon aggregate such as FIGS. 6 and 7, in which a carbon black layer is formed on a first plate-shaped silicon aggregate through a carbon black coating (S170) step, can be provided as a silicon anode material.
- the carbon black coating (S170) step can include a step of manufacturing a second plate-shaped silicon composite, in which a silicon carbide (13) layer and a carbon black layer (15) coating a plurality of carbon nanotubes (14) are formed, and a second plate-shaped silicon aggregate which is an aggregate thereof.
- the carbon nanotubes are bonded to the surface of the silicon carbide layer, and the surface of the silicon carbide layer where the carbon nanotubes and the carbon nanotubes are not bonded is exposed to the outside, and the exposed surface of the silicon carbide layer and the carbon nanotubes are coated with carbon black.
- the second plate-shaped silicon composite is a composite in which a silicon carbide layer is formed on the first plate-shaped silicon composite and then a carbon black layer is formed, and a state in which these are bonded and bonded can become a second plate-shaped silicon aggregate.
- the carbon black coating (S170) step may be performed simultaneously with the silicon carbide layer formation (S160) as a single step so that the silicon carbide layer and the carbon black layer are formed continuously, or the carbon black coating (S170) step may be performed separately from the silicon carbide layer formation (S160) step.
- a method of simultaneously forming a carbon black layer and forming a silicon carbide layer in one step may be a method of continuously forming a silicon carbide layer and a carbon black layer in one heating process, wherein when a first plate-shaped silicon composite is passed through a heated kiln for forming a silicon carbide layer, a hydrocarbon gas capable of forming a carbon black layer is supplied.
- the carbon black layer forming step when the carbon black layer forming step is separated from the silicon carbide layer forming step, after the silicon carbide layer formation is completed on the first plate-shaped silicon composite, the composite on which the silicon carbide layer has been formed is put into a rotary kiln or a kiln, and one of a hydrocarbon gas, a liquefied natural gas, and a liquefied petroleum gas is selectively supplied while thermally decomposing at 750 to 1000°C, thereby forming a carbon black layer.
- the decomposition rate of the hydrocarbon gas can be increased, so that the hydrocarbon gas used for forming the same carbon black layer can be saved.
- the hydrocarbon gas generated by the polymer decomposition has a high ratio of hydrogen and oxygen, so that the hydrocarbon decomposition rate for forming the carbon black layer can be somewhat reduced.
- the hydrocarbon gas supplied for forming the carbon black layer according to the present invention may be at least one selected from the group consisting of C 2 H 2 (acetylene), C 2 H 6 (ethane), C 2 H 4 (ethylene), CH 4 (methane), C 3 H 8 (propane), C 4 H 10 (butane), C 3 H 6 (propylene), and C 4 H 8 (butylene), and the hydrocarbon gas may also be used by vaporizing a hydrocarbon solution composed of C, H, and O, such as ethanol, methanol, and toluene.
- the hydrocarbon gas supply may be 0.05 to 1.0 M/min, preferably 0.05 to 0.5 M/min.
- the method for manufacturing a silicon anode material of the present invention may further include a step of mixing the silicon anode material targeted in the present invention, which is a plate-shaped silicon aggregate, with graphite after the carbon black coating (S170) step.
- the graphite particles may have a size of 10 to 30 ⁇ m, preferably 12 to 26 ⁇ m, and the silicon anode material of the present invention may have an aspect ratio similar to that of the graphite particles, so that the battery performance effect due to mixing of graphite may be further improved.
- the silicon negative electrode material for a lithium ion secondary battery of the present invention can be used in the manufacture of a negative electrode of a lithium secondary battery and a lithium secondary battery including the same.
- the silicon anode material for a lithium ion secondary battery of the present invention described above includes an organic shape of a multilayer structure including a silicon oxide layer, a carbon nanotube, and a carbon-containing layer in plate-like silicon particles obtained from waste silicon kerf, and when composited with graphite, has an excellent filling rate and can charge more lithium based on the same volume, and is also economical because it uses waste silicon kerf.
- a lithium ion secondary battery including the silicon negative electrode material for a lithium ion secondary battery of the present invention may have an initial discharge capacity of 500 mAh/g or more, and a residual capacity (discharge capacity) at 100 cycles of 89% or more, or 430 to 470 mAh/g.
- a polycrystalline silicon ingot was cooled, lubricated, and cut with a 50 ⁇ m diameter diamond wio saw using a mixture of water and diethylene glycol to recover 5,000 ml of a 5% plate-shaped silicon mixture solution.
- the mixture solution was injected into an atomizer plate rotating at 15,000 rpm in a spray dryer at a rate of 20 ml per minute and dried at 180°C to obtain plate-shaped silicon particles.
- Low-density plate-shaped silicon particles were produced by pulverizing plate-shaped silicon particles with air in a pin mill with a radius of 120 mm and 3400 rpm.
- a silicon oxide layer was formed by oxidizing low-density plate-shaped silicon particles by bubbling and injecting hydrogen peroxide with nitrogen while keeping them in a rotary kiln at 800°C for 10 minutes.
- the mixed dispersion was injected at a rate of 30 ml per minute into an atomizer plate rotating at 18,000 rpm in a spray dryer and dried at 200°C to obtain first plate-shaped silicon aggregates agglomerated in a spherical or granule shape (Figs. 3, 4, and 5).
- the first plate-shaped silicon aggregate was kept in a nitrogen atmosphere rotary kiln at 950°C for 5 minutes to decompose the polymer binder, polyvinylpyrrolidone, and form a silicon carbide layer on the silicon oxide layer.
- hydrocarbon gas was then supplied to continuously form a carbon black layer.
- methane gas was supplied at a rate of 0.1 M/min to additionally form a carbon black layer to coat the silicon carbide layer and carbon nanotubes, thereby obtaining the second plate-shaped silicon aggregate, which is the final silicon anode material. It was confirmed that carbon nanotubes were bonded to the surface of the silicon carbide layer as the silicon carbide layer was formed (Figs. 6 and 7).
- a silicon anode paste was manufactured, which was applied to copper foil, dried, and then punched into a circular shape to manufacture a cathode.
- a silicon oxide layer was formed using the same method as in Manufacturing Example 1.
- silicon anode material forming an oxide layer was added to 5,000 g of distilled water with a viscosity of 100 cps mixed with 25 g of carboxymethyl cellulose instead of carbon nanotubes, and dispersed using a high-pressure homogenizer to produce a dispersion.
- the dispersion was injected at a rate of 30 ml per minute onto an atomizer plate rotating at 18,000 rpm in a spray dryer and dried at 200°C to obtain silicon aggregates in the shape of spheres or granules.
- the silicon agglomerate was kept in a 950°C rotary kiln for 20 minutes, and methane gas was injected at a rate of 0.1 M/min. to form a carbon black layer, thereby obtaining a silicon anode material.
- a silicon anode paste was made, which was then applied to copper foil, dried, and punched into a circular shape to manufacture a cathode.
- the capacity was measured under the condition of 1C of charge and discharge current at 25°C, and the life was measured up to 100 cycles under the condition of 1C of charge and discharge current at 25°C.
- the measurement results showed a discharge capacity of 504.1 mAh/g in the first cycle test, a low capacity decrease was confirmed during repeated cycles, and a residual capacity of 448.6 mAh/g, or 89.0%, was confirmed at 100 cycles.
- a half-cell was manufactured in the same manner as in Example 1, except that the cathode prepared in Manufacturing Example 2 was used, and charge/discharge performance was measured.
- the measurement results showed a discharge capacity of 510.2 mAh/g in the first cycle test and an initial irreversible capacity of 92.2%. As the cycle progressed, a continuous decrease in capacity was observed, and at 100 cycles, a residual capacity of 426.5 mAh/g, or 83.6%, was confirmed.
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Abstract
Description
본 발명은 판상 실리콘 입자에 산화층 및 탄소계 다층 구조와 탄소나노튜브를 포함하는 리튬이온이차전지용 실리콘 음극재에 관한 발명이다.The present invention relates to a silicon negative electrode material for a lithium ion secondary battery, which comprises a plate-shaped silicon particle, an oxide layer, a carbon-based multilayer structure, and carbon nanotubes.
세계적으로 전기차 보급 확대에 따라 전기차의 배터리인 리튬이온이차전지의 성능 향상에 대한 요구가 증가하고 있다. 리튬이온이차전지 성능 향상은 소재나 구조의 변화 등 다방면의 연구가 진행되고 있으며, 특히 음극재 소재로서 실리콘에 대한 연구개발이 활발하다.As electric vehicles are becoming more widespread worldwide, there is an increasing demand for improved performance of lithium-ion secondary batteries, which are the batteries of electric vehicles. Research is being conducted in various fields to improve the performance of lithium-ion secondary batteries, including changes in materials and structures, and in particular, research and development on silicon as a negative electrode material is active.
리튬이온이차전지의 음극재는 흑연계 음극재가 대표적이고 대부분의 전기차에 사용되고 있으나, 소재의 특성상 성능의 향상 측면에서 한계가 명확하다. 반면 실리콘 음극재는 흑연계 음극재보다 단위 무게당 용량이 10배 정도 높아 전기차의 주행거리를 현저히 늘릴 수 있고 고속 충전에도 유리한 장점이 있다.The typical anode material for lithium-ion secondary batteries is graphite-based anode material, and it is used in most electric vehicles. However, due to the nature of the material, there are clear limitations in terms of performance improvement. On the other hand, silicon-based anode materials have a capacity per unit weight that is about 10 times higher than that of graphite-based anode materials, which can significantly increase the driving range of electric vehicles and also has the advantage of being advantageous for fast charging.
이러한 실리콘 음극재의 장점에도 불구하고 현재 실리콘 음극재는 탄소계 음극재와 함께 일부만 사용되고 있는데, 실리콘 음극재의 가장 큰 문제는 충전과 방전의 반복에서 발생하는 부피 팽창이다. 실리콘은 원자 구조상 충전과 방전 동안 리튬이온 4개가 결합하고 빠져나가며 그 과정이 반복되면서 2~3배에 달하는 부피 팽창이 발생하게 되는 것이다. 부피 팽창 후 실리콘 음극재가 원래 상태로 돌아오지 못하게 될 수 있는데, 이때 음극의 크랙(crack) 발생이나 음극재의 분리 등에 의해 전해질과의 전기적 연결 소실이 발생하게 된다.Despite these advantages of silicon anode materials, silicon anode materials are currently only used in some cases along with carbon anode materials. The biggest problem with silicon anode materials is the volume expansion that occurs during repeated charging and discharging. Due to the atomic structure of silicon, four lithium ions combine and leave during charging and discharging, and as this process is repeated, the volume expands by 2 to 3 times. After the volume expansion, the silicon anode material may not return to its original state, and in this case, the electrical connection with the electrolyte may be lost due to cracks in the anode or separation of the anode material.
실리콘 음극재의 부피 팽창 문제는 이미 잘 알려진 문제이기에, 한국 등록특허 제1818813호, 일본 등록특허 제7288054호와 같이 실리콘 음극재의 부피 팽창 억제를 위한 코어-쉘(core-shell) 구조를 개발하는 등 지속적인 연구가 이루어지고 있으나, 흑연계 음극재를 대체하여 주요 음극재 소재로 사용하기에는 여전히 해결해야할 과제가 남아 있는 실정이다.Since the volume expansion problem of silicon anode materials is already a well-known problem, continuous research is being conducted, such as developing a core-shell structure to suppress the volume expansion of silicon anode materials, as in Korean Patent No. 1818813 and Japanese Patent No. 7288054. However, there are still issues to be resolved before silicon anode materials can be used as the main anode material to replace graphite anode materials.
본 발명은 실리콘 음극재에서 발생하는 부피 팽창, 충ㆍ방전 효율 저하, 짧은 수명 등의 문제를 해결하고 실리콘 원료로 폐실리콘 커프(Silicon kerf)를 사용하여 폐기되는 실리콘 소재의 재활용과 실리콘 소재 사용에 따른 비용 상승 문제도 해결할 수 있다.The present invention solves problems such as volume expansion, reduced charge/discharge efficiency, and short lifespan that occur in silicon anode materials, and also solves problems such as recycling of discarded silicon materials and increased costs due to the use of silicon materials by using waste silicon kerf as a silicon raw material.
본 발명은 복수의 판상 실리콘 복합체가 응집되어 형성된 판상 실리콘 응집체를 포함하는 리튬이차전지용 실리콘 음극재로서, 판상 실리콘 복합체는 판상 실리콘 입자의 표면을 산화시켜 형성한 산화층, 산화층 외각에 형성된 실리콘카바이드층, 실리콘카바이드층 표면에서 그물형 네트워크 구조를 형성하며 결합된 복수의 탄소나노튜브 및, 실리콘카바이드층과 그물형 네트워크 구조를 형성하며 결합된 복수의 탄소나노튜브를 코팅하는 카본블랙층을 포함하는 리튬이차전지용 실리콘 음극재를 제공할 수 있다.The present invention provides a silicon anode material for a lithium secondary battery including a platelet silicon aggregate formed by agglomeration of a plurality of platelet silicon complexes, wherein the platelet silicon complex includes an oxide layer formed by oxidizing the surface of platelet silicon particles, a silicon carbide layer formed on the outer surface of the oxide layer, a plurality of carbon nanotubes formed on the surface of the silicon carbide layer and bonded to form a mesh network structure, and a carbon black layer coating the silicon carbide layer and the plurality of carbon nanotubes formed on the surface and bonded to form a mesh network structure.
본 발명의 리튬이차전지용 실리콘 음극재에서 그물형 네트워크 구조를 형성하며 결합된 탄소나노튜브는 인접한 복수의 판상 실리콘 복합체를 연결할 수 있다.In the silicon negative electrode material for a lithium secondary battery of the present invention, carbon nanotubes that are combined to form a mesh-like network structure can connect a plurality of adjacent plate-shaped silicon complexes.
본 발명의 리튬이차전지용 실리콘 음극재에서 실리콘카바이드층은 판상 실리콘 입자의 표면을 산화시켜 형성한 산화층의 표면에 복수의 탄소나노튜브가 그물형 네트워크 구조를 형성한 상태에서 산화층의 산소 중 일부가 카본으로 치환되어 형성될 수 있다.In the silicon negative electrode material for a lithium secondary battery of the present invention, the silicon carbide layer can be formed by oxidizing the surface of plate-shaped silicon particles, and having a plurality of carbon nanotubes form a mesh network structure on the surface of the oxide layer, and some of the oxygen in the oxide layer can be replaced with carbon.
본 발명의 리튬이차전지용 실리콘 음극재에서 실리콘카바이드층과 카본블랙층은 한 번의 가열공정에서 연속으로 형성될 수 있다.In the silicon negative electrode material for a lithium secondary battery of the present invention, the silicon carbide layer and the carbon black layer can be formed continuously in a single heating process.
본 발명의 리튬이차전지용 실리콘 음극재에서 탄소나노튜브는 평균 직경이 1.0 내지 15㎚일 수 있다.In the silicon negative electrode material for a lithium secondary battery of the present invention, the carbon nanotubes may have an average diameter of 1.0 to 15 nm.
본 발명의 리튬이차전지용 실리콘 음극재에서 판상 실리콘 응집체는 구형 또는 그래뉼(granule) 형상일 수 있다.In the silicon negative electrode material for a lithium secondary battery of the present invention, the plate-like silicon aggregate may be in a spherical or granule shape.
본 발명의 리튬이차전지용 실리콘 음극재에서 판상 실리콘 응집체는 평균 직경이 2 내지 50㎛일 수 있다.In the silicon negative electrode material for a lithium secondary battery of the present invention, the plate-shaped silicon aggregates may have an average diameter of 2 to 50 μm.
본 발명의 리튬이차전지용 실리콘 음극재는 흑연을 더 포함할 수 있다.The silicon negative electrode material for a lithium secondary battery of the present invention may further contain graphite.
본 발명은 본 발명의 리튬이차전지용 실리콘 음극재를 포함하는 음극을 제공할 수 있다.The present invention can provide an anode comprising the silicon anode material for a lithium secondary battery of the present invention.
본 발명은 본 발명에 따른 음극을 포함하는 리튬이차전지를 제공할 수 있다.The present invention can provide a lithium secondary battery including a negative electrode according to the present invention.
본 발명의 리튬이차전지용 실리콘 음극재는 판상 실리콘에 산화층, 실리콘카바이드층 및 카본블랙층을 형성하고 실리콘 복합체 입자 사이에서 전기전도성을 부여할 수 있는 탄소나노튜브를 포함하고 있어, 실리콘 음극재의 부피 변화에서도 일정한 전기전도성을 부여하여 균일한 충전과 방전이 가능하도록 하고 개별 복합체 입자의 전기전도성 손실을 방지하여 실리콘 음극재의 수명을 현저히 향상시킬 수 있으며, 폐실리콘 커프를 원료로 사용하여 폐기되는 실리콘 소재의 재활용과 실리콘 소재 사용에 따른 비용 상승 문제도 해결할 수 있다.The silicon anode material for a lithium secondary battery of the present invention forms an oxide layer, a silicon carbide layer, and a carbon black layer on plate-like silicon, and includes carbon nanotubes capable of imparting electrical conductivity between silicon composite particles, thereby imparting constant electrical conductivity even when the volume of the silicon anode material changes, thereby enabling uniform charging and discharging, and preventing loss of electrical conductivity of individual composite particles, thereby significantly improving the lifespan of the silicon anode material. In addition, by using waste silicon cuff as a raw material, it is possible to solve the problem of recycling of discarded silicon materials and increased costs due to the use of silicon materials.
도 1은 본 발명의 일 실시예에 따른 리튬이차전지용 실리콘 음극재 원료로 사용되는 판상 실리콘 입자를 보여주는 사진이다.FIG. 1 is a photograph showing plate-shaped silicon particles used as a silicon anode material raw material for a lithium secondary battery according to one embodiment of the present invention.
도 2는 본 발명의 일 실시예에 따른 리튬이전지용 실리콘 음극재의 단면 구조를 보여준다.Figure 2 shows a cross-sectional structure of a silicon negative electrode material for a lithium battery according to one embodiment of the present invention.
도 3은 본 발명의 일 실시예에 따른 리튬이차전지용 실리콘 음극재 제조 과정에서 실리콘 산화층이 형성된 판상 실리콘 입자를 탄소나노튜브 분산액에 혼합한 혼합 분산액을 건조한 후 형성된 판상 실리콘 응집체 형상을 보여주는 사진이다.FIG. 3 is a photograph showing the shape of a plate-shaped silicon aggregate formed after drying a mixed dispersion in which plate-shaped silicon particles having a silicon oxide layer formed thereon are mixed with a carbon nanotube dispersion during the manufacturing process for a silicon anode material for a lithium secondary battery according to one embodiment of the present invention.
도 4는 도 3의 판상 실리콘 응집체 사진을 확대한 사진으로 실리콘 산화층 표면에 그물형 네트워크 구조를 형성하며 결합하고 인접한 복합체 입자의 표면에 걸쳐 연결된 복수의 탄소나노튜브를 보여주는 사진이다.Figure 4 is an enlarged photograph of the plate-shaped silicon agglomerate photograph of Figure 3, showing a plurality of carbon nanotubes that are bonded to form a mesh-like network structure on the surface of the silicon oxide layer and are connected across the surfaces of adjacent composite particles.
도 5는 도 4의 사진을 확대한 사진으로 탄소나노튜브가 실리콘 산화층 표면을 약 25% 정도 뒤덮으면서 인접한 실리콘 복합체를 연결하고 있는 구조를 보여준다.Figure 5 is an enlarged photograph of the photograph in Figure 4, showing a structure in which carbon nanotubes cover about 25% of the surface of the silicon oxide layer and connect adjacent silicon complexes.
도 6은 도 3의 판상 실리콘 응집체를 탄화 처리하고 카본블랙층을 형성한 판상 실리콘 응집체의 사진을 보여준다.Figure 6 shows a photograph of a plate-shaped silicon aggregate in which the plate-shaped silicon aggregate of Figure 3 was carbonized to form a carbon black layer.
도 7은 도 6의 판상 실리콘 응집체를 확대한 사진으로 실리콘 산화층으로부터 형성된 실리콘카바이드층 및 탄소나노튜브가 카본블랙층에 의해 코팅된 모습을 보여준다.Figure 7 is an enlarged photograph of the plate-shaped silicon agglomerate of Figure 6, showing a silicon carbide layer formed from a silicon oxide layer and carbon nanotubes coated with a carbon black layer.
도 8은 본 발명의 일 실시예에 따른 리튬이온이차전지용 실리콘 음극재의 제조방법을 개략적으로 나타낸 흐름도이다.Figure 8 is a flow chart schematically illustrating a method for manufacturing a silicon negative electrode material for a lithium ion secondary battery according to one embodiment of the present invention.
도 9는 본 발명의 실시예 및 비교예에 따른 반전지(half-cell)의 충방전 시험 결과의 그래프이다.Figure 9 is a graph of the results of a charge/discharge test of a half-cell according to an embodiment and a comparative example of the present invention.
본 발명의 이점 및 특징, 그리고 그것들을 달성하는 방법은 첨부되는 도면과 함께 상세하게 후술되어 있는 구체적인 내용을 참조하면 명확해질 것이다. 그러나 본 발명은 이하에서 개시되는 구체적인 내용에 한정되는 것이 아니라 서로 다른 다양한 형태로 구현될 수 있으며, 단지 본 발명에 대한 구체적인 내용은 본 발명의 개시가 완전하도록 하고, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 발명의 범주를 완전하게 알려주기 위해 제공되는 것이며, 본 발명은 청구항의 범주에 의해 정의될 뿐이다. 명세서 전체에 걸쳐 동일 참조 부호는 동일 구성 요소를 지칭한다.The advantages and features of the present invention, and the method for achieving them, will become clear with reference to the specific contents described in detail below together with the accompanying drawings. However, the present invention is not limited to the specific contents disclosed below, but can be implemented in various different forms, and the specific contents of the present invention are provided only to make the disclosure of the present invention complete and to fully inform a person having ordinary skill in the art to which the present invention belongs of the scope of the invention, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout the specification.
본 발명에 대한 구체적인 내용을 설명함에 있어서 공지 기능 또는 구성에 대한 설명이 본 발명의 요지를 불필요하게 흐릴 수 있다고 판단되는 경우에는 그 상세한 설명을 생략할 것이다. 그리고 후술되는 용어들은 본 발명의 기능을 고려하여 정의된 용어들로서 이는 사용자, 운용자의 의도 또는 관례 등에 따라 달라질 수 있다. 그러므로 그 정의는 본 명세서 전반에 걸친 내용을 토대로 내려져야 할 것이다.In describing the specific contents of the present invention, if it is judged that the description of known functions or configurations may unnecessarily obscure the gist of the present invention, the detailed description thereof will be omitted. In addition, the terms described below are terms defined in consideration of the functions of the present invention, and these may vary depending on the intention or custom of the user or operator. Therefore, the definitions should be made based on the contents throughout this specification.
본 발명은 판상 실리콘 입자에 실리콘 산화층, 실리콘카바이드층, 그물형 네트워크 구조를 형성하며 결합된 복수의 탄소나노튜브 및 실리콘카바이드와 탄소나노튜브를 코팅하는 카본블랙층이 포함된 실리콘 복합체가 응집되어 형성된 판상 실리콘 응집체를 포함하는 리튬이차전지용 실리콘 음극재를 제공할 수 있다.The present invention can provide a silicon anode material for a lithium secondary battery including a plate-shaped silicon aggregate formed by agglomeration of a silicon composite including a silicon oxide layer, a silicon carbide layer, a plurality of carbon nanotubes bonded to plate-shaped silicon particles and forming a mesh-like network structure, and a carbon black layer coating the silicon carbide and carbon nanotubes.
본 발명의 실리콘 음극재에서 판상 실리콘 복합체는 판상 실리콘 입자의 표면을 산화시켜 형성한 산화층, 산화층 외각에 형성된 실리콘카바이드층, 실리콘카바이드층 표면에서 그물형 네트워크 구조를 형성하며 결합된 복수의 탄소나노튜브 및 실리콘카바이드층과 그물형 네트워크 구조를 형성하며 결합된 복수의 탄소나노튜브를 코팅하는 카본블랙층을 포함할 수 있다.In the silicon anode material of the present invention, the plate-shaped silicon composite may include an oxide layer formed by oxidizing the surface of plate-shaped silicon particles, a silicon carbide layer formed on the outer surface of the oxide layer, a plurality of carbon nanotubes formed in a mesh-like network structure on the surface of the silicon carbide layer and bonded thereto, and a carbon black layer coating the plurality of carbon nanotubes formed in a mesh-like network structure with the silicon carbide layer and bonded thereto.
본 발명의 판상 실리콘 복합체에서 판상 실리콘 입자는 폐실리콘 커프(Silicon kerf)로부터 제조될 수 있고 판상 실리콘 입자는 평균 두께가 10 내지 100㎚, 평균 길이가 10㎛ 이하, 바람직하게는 1 내지 10㎛일 수 있다. 판상 실리콘 입자의 평균 두께가 10㎚ 미만일 경우 산화층 형성 시 잃는 부분이 너무 많아서 초기 용량이 처리 전 대비 30%도 되지 않을 수 있고, 평균 두께가 100㎚를 초과일 경우 중앙 실리콘 층의 비율이 80%이상으로 높아져 성능 개선 효과가 크지 않을 수 있다. 또한 판상 실리콘 입자의 평균 길이가 10㎛를 초과할 경우 흑연과의 혼합 시, 흑연과 본 발명에 따른 판상 실리콘 응집체 사이에 빈 공간이 많이 형성되어 동일 공간에 기공율이 커지고 충진율이 떨어져 동일 부피에서 방전 용량이 크게 떨어질 수 있다.In the plate-like silicon composite of the present invention, the plate-like silicon particles may be manufactured from waste silicon kerf, and the plate-like silicon particles may have an average thickness of 10 to 100 nm and an average length of 10 μm or less, preferably 1 to 10 μm. When the average thickness of the plate-like silicon particles is less than 10 nm, so that too much part is lost during the formation of an oxide layer, so that the initial capacity may not even be 30% of the amount before treatment, and when the average thickness exceeds 100 nm, the ratio of the central silicon layer may be higher than 80%, so that the performance improvement effect may not be significant. In addition, when the average length of the plate-like silicon particles exceeds 10 μm, when mixed with graphite, a lot of empty space is formed between the graphite and the plate-like silicon aggregate according to the present invention, so that the porosity in the same space increases and the filling rate decreases, so that the discharge capacity in the same volume may drop significantly.
본 발명에서 사용하는 폐실리콘 커프(Silicon kerf)는 태양전지 산업 또는 반도체 산업에서 실리콘 웨이퍼를 얻기 위해 금속 실리콘 덩어리를 얇게 자르는 과정에서 발생하는 것을 이용할 수 있다. 여기서, 폐실리콘 커프는 태양전지 산업 또는 반도체 산업에서 사용하는 99.9999999% ~ 99.999999999%의 순도를 갖고 있는 고순도 실리콘이며, 와이어 형태의 톱인 와이어쏘를 사용하므로 나노 두께를 가진 판상의 물질로 떨어져 나올 수 있고 이는 고순도의 판상 실리콘 입자로서 리튬이차전지용 음극활물질의 우수한 원료로 사용할 수 있다.The waste silicon kerf used in the present invention can be utilized as generated in the process of thinly slicing a lump of metallic silicon to obtain a silicon wafer in the solar cell industry or the semiconductor industry. Here, the waste silicon kerf is high-purity silicon with a purity of 99.9999999% to 99.99999999% used in the solar cell industry or the semiconductor industry, and since a wire saw, which is a wire-shaped saw, is used, it can be separated into a plate-shaped material with a nano-thickness, and this can be used as an excellent raw material for an anode active material for a lithium secondary battery as a high-purity plate-shaped silicon particle.
본 발명의 일 실시예에 따르면, 판상 실리콘 입자는 판 형태로 형성된 분말 입자일 수 있는데, 태양전지 또는 반도체용 실리콘 잉곳(Ingot)을 얇게 슬라이싱(Slicing)하는 과정에서 발생하는 폐실리콘 커프(절삭미분)로 형성될 수 있다. 실리콘 잉곳 절삭 방법은 일반적으로 3 내지 4 종류의 방법이 있으며, 모든 방법은 분급, 세척, 침전 및 건조 단계를 거쳐 폐실리콘 커프를 얻을 수 있다. 폐실리콘 커프로부터 두께 균일도 일정한 가지는 판상 실리콘 입자를 얻기 위해, 다이아몬드 와이어쏘(Diamond wire saw)를 통해 만들어진 것을 사용하는 게 바람직하나, 이에 한정하지는 않는다. 구체적으로, 다이어몬드 와이어쏘는 50㎛ 내외의 피아노선이라는 탄소강 와이어 표면에 다이아몬드 입자가 랜덤하게 박힌 것으로 물 또는 디에틸렌글리콜 성분을 윤활제로 하여 실리콘 잉곳을 자르는 방식이다. 실리콘 잉곳에는 단결정 잉곳과 다결정 잉곳이 있으며, 모든 절삭미분이 본 발명의 판상 실리콘 입자로 적합하다는 장점이 있다.According to one embodiment of the present invention, the plate-shaped silicon particles may be powder particles formed in a plate shape, and may be formed from waste silicon kerfs (cutting fines) generated in the process of thinly slicing a silicon ingot for a solar cell or a semiconductor. There are generally three to four types of silicon ingot cutting methods, and all methods can obtain waste silicon kerfs through the steps of classification, washing, precipitation, and drying. In order to obtain plate-shaped silicon particles having a uniform thickness from the waste silicon kerfs, it is preferable to use those made by a diamond wire saw, but the present invention is not limited thereto. Specifically, the diamond wire saw is a method of cutting silicon ingots using water or diethylene glycol as a lubricant by randomly embedding diamond particles on the surface of a carbon steel wire called a piano wire of about 50㎛. Silicon ingots include single-crystal ingots and polycrystalline ingots, and all of the cutting fines have the advantage of being suitable as the plate-shaped silicon particles of the present invention.
본 발명의 실리콘 음극재에서 실리콘 산화층은 폐실리콘 커프로부터 얻은 판상 실리콘 입자의 표면을 산화시켜 형성한 것으로, 산화층을 통해 리튬과 판상 실리콘 입자의 결합 속도를 늦춰 충방전 수명을 극적으로 향상시킬 수 있다.In the silicon anode material of the present invention, the silicon oxide layer is formed by oxidizing the surface of plate-shaped silicon particles obtained from waste silicon cuffs, and the bonding speed between lithium and plate-shaped silicon particles is slowed down through the oxide layer, thereby dramatically improving the charge/discharge life.
본 발명의 일 실시예에 따르면, 산화층은 판상 실리콘 입자의 표면에 자연적으로 형성된 자연 산화층을 추가로 산화시켜 보다 두껍게 산화층을 형성할 수도 있고 산화층의 평균 두께는 2 내지 10㎚일 수 있다. 산화층의 평균 두께가 2㎚ 미만일 경우 판상 실리콘 입자 표면에 점 형태의 불균일한 산화층이 형성될 수 있고 판상 실리콘 입자 표면에 산화되지 않은 부분이 점 형태의 산화층 사이에 다수 발생하게 되어 균일한 산화층에 의한 효과인 수명성능 향상 효과가 바람직하게 나타나지 않을 수 있으며, 산화층이 10㎚를 초과할 경우 초기 방전용량 감소의 주요 이유인 비가역 용량이 30%이상으로 크게 늘어나 리튬의 소모가 심해질 수 있다.According to one embodiment of the present invention, the oxide layer may further oxidize a natural oxide layer naturally formed on the surface of the plate-like silicon particles to form a thicker oxide layer, and the average thickness of the oxide layer may be 2 to 10 nm. When the average thickness of the oxide layer is less than 2 nm, an uneven oxide layer in the shape of dots may be formed on the surface of the plate-like silicon particles, and a large number of non-oxidized portions on the surface of the plate-like silicon particles occur between the dot-like oxide layers, so that the effect of improving the life performance due to the uniform oxide layer may not be preferably exhibited. In addition, when the oxide layer exceeds 10 nm, the irreversible capacity, which is the main reason for the decrease in the initial discharge capacity, may significantly increase by more than 30%, which may cause severe lithium consumption.
본 발명의 실리콘 음극재에서 실리콘카바이드층은 실리콘 산화층을 감싸도록 실리콘 산화층의 외각부터 환원 및 탄화를 거쳐 실리콘 산화층의 산소 중 일부가 탄소로 치환되면서 형성될 수 있다. 실리콘 산화층은 비정질로 리튬과 결합 시 비가역 용량을 상승시키면서 리튬과 전자의 이동 통로를 형성하지만, 실리콘카바이드층은 비가역 용량의 상승을 산화층의 1/10이하로 줄이고 리튬과 전자의 이동 통로를 형성하면서 리튬의 확산 또는 이동 속도를 조절하여 고속 충방전 성능 및 수명을 보다 향상시킬 수 있다.In the silicon anode material of the present invention, the silicon carbide layer can be formed by substituting some of the oxygen in the silicon oxide layer with carbon through reduction and carbonization starting from the outer surface of the silicon oxide layer so as to surround the silicon oxide layer. The silicon oxide layer is amorphous and forms a passage for lithium and electrons to move while increasing the irreversible capacity when combined with lithium, but the silicon carbide layer reduces the increase in irreversible capacity to less than 1/10 of the oxide layer and forms a passage for lithium and electrons while controlling the diffusion or movement speed of lithium, thereby further improving the high-speed charge/discharge performance and lifespan.
본 발명의 일 실시예에 따르면, 실리콘카바이드층의 두께는 1 내지 5㎚ 일 수 있다. 1㎚ 미만에서는 실리콘카바이드층이 불균일한 점 형태로 만들어져서 산화층의 노출면적이 많아져 수명 성능의 향상 효과를 기대하기 어렵고 5nm 초과일 경우 리튬의 방전 속도가 실리콘카바이드층이 없는 경우 대비 크게 떨어져 고속 충방전 성능이 현저히 저하될 수 있다.According to one embodiment of the present invention, the thickness of the silicon carbide layer may be 1 to 5 nm. If it is less than 1 nm, the silicon carbide layer is formed in an uneven dot shape, so that the exposed area of the oxide layer increases, making it difficult to expect an improvement in life performance. If it is more than 5 nm, the discharge speed of lithium is significantly reduced compared to when there is no silicon carbide layer, so that the high-speed charge/discharge performance may be significantly reduced.
본 발명의 실리콘 음극재에서 탄소나노튜브는 실리콘카바이드층 외각 표면에 결합된 형태로 복수의 탄소나노튜브가 그물형 네트워크 구조를 형성할 수 있다.In the silicon anode material of the present invention, carbon nanotubes are bonded to the outer surface of the silicon carbide layer, and a plurality of carbon nanotubes can form a mesh-like network structure.
또한 본 발명의 실리콘 음극재에서 실리콘카바이드층 외각의 그물형 네트워크 구조를 형성하며 결합된 탄소나노튜브들은 인접한 복수의 판상 실리콘 복합체를 연결할 수 있다. 탄소나노튜브는 하나 이상의 가닥이 인접한 복수의 실리콘카바이드층 표면에 걸쳐 결합될 수 있고, 이와 같이 인접한 복수의 실리콘카바이드층 표면에 걸쳐 결합된 복수의 탄소나노튜브는 판상 실리콘 복합체 입자 사이에 전기전도성을 부여하는 역할을 할 수 있다.In addition, in the silicon anode material of the present invention, the carbon nanotubes that form a mesh-like network structure on the outer surface of the silicon carbide layer can connect a plurality of adjacent plate-like silicon composites. The carbon nanotubes can be bonded such that one or more strands span the surfaces of a plurality of adjacent silicon carbide layers, and the plurality of carbon nanotubes bonded across the surfaces of the plurality of adjacent silicon carbide layers in this way can play a role in imparting electrical conductivity between the plate-like silicon composite particles.
본 발명의 실리콘 음극재에서 실리콘카바이드층 표면에 결합된 탄소나노튜브는 균일한 충전 및 방전 속도와 음극 수명을 향상시킬 수 있다. 구체적으로 판상 실리콘 복합체에서 중앙의 판상 실리콘은 리튬 완충 시 부피가 2배 이상 늘어나고 방전 시 원래의 부피로 돌아오는데, 탄소나노튜브는 부피가 켜졌을 때와 원상으로 돌아올 때 모두에 동등한 전기전도성을 부여하여 균일한 충전과 방전 속도가 유지되도록 도와주고 판상 실리콘 복합체 개별 입자가 전기전도성을 잃어서 더 이상 충방전 역할을 할 수 없는 경우를 막아 실리콘 음극의 수명을 늘려주게 된다. In the silicon anode material of the present invention, the carbon nanotubes bonded to the surface of the silicon carbide layer can improve the uniform charge and discharge speeds and the life of the anode. Specifically, in the plate-like silicon composite, the central plate-like silicon expands by more than twice in volume when lithium is charged and returns to the original volume when discharged, and the carbon nanotubes provide equal electrical conductivity both when the volume is increased and when it returns to the original volume, thereby helping to maintain a uniform charge and discharge speed and preventing individual particles of the plate-like silicon composite from losing electrical conductivity and no longer being able to perform the charge and discharge role, thereby extending the life of the silicon anode.
본 발명의 일 실시예에 따르면, 탄소나노튜브는 실리콘카바이드층의 표면적을 5 내지 30% 뒤덮을 수 있고, 탄소나노튜브 및 탄소나노튜브가 결합되지 않은 영역의 실리콘카바이드층 외각 표면을 카본블랙층으로 코팅하여 판상 실리콘 복합체 각각의 개별 입자에 높은 전기전도성을 부여하면서 탄소나노튜브와 함께 판상 실리콘 복합체 간의 전기전도성을 보다 향상시킬 수 있다.According to one embodiment of the present invention, the carbon nanotubes can cover 5 to 30% of the surface area of the silicon carbide layer, and the outer surface of the silicon carbide layer in the region where the carbon nanotubes and the carbon nanotubes are not combined is coated with a carbon black layer, thereby imparting high electrical conductivity to each individual particle of the plate-like silicon composite, while further improving the electrical conductivity between the plate-like silicon composite and the carbon nanotubes.
본 발명의 다른 일 실시예에 따르면, 탄소나노튜브는 평균 직경이 1.0 내지 15㎚, 바람직하게는 6 내지 12㎚일 수 있고 길이는 50 내지 300㎛, 바람직하게는 100 내지 300㎛일 수 있다. 1.0㎚는 탄소나노튜브 최소 평균 직경이고 탄소나노튜브의 직경이 15㎚를 초과하면 유연성이 떨어져서 판상 실리콘 입자에 형성된 산화층 표면과 부착력이 떨어질 수 있다. 탄소나노튜브의 길이가 짧으면 탄소나노튜브에 의한 판상 실리콘 복합체 입자 사이의 전기전도도 향상 효과가 저하될 수 있고 탄소나노튜브의 길이가 길면 실리콘 음극재의 제조 과정에서 사용하는 탄소나노튜브 분산액 내 성분의 균일성이 저하되거나, 판상 실리콘 복합체들의 응집 입자 크기나 형태가 지나치게 불균일해질 수 있다.According to another embodiment of the present invention, the carbon nanotubes may have an average diameter of 1.0 to 15 nm, preferably 6 to 12 nm, and a length of 50 to 300 μm, preferably 100 to 300 μm. 1.0 nm is the minimum average diameter of the carbon nanotubes, and if the diameter of the carbon nanotubes exceeds 15 nm, the flexibility may decrease and the adhesion to the surface of the oxide layer formed on the plate-like silicon particles may decrease. If the length of the carbon nanotubes is short, the effect of improving the electrical conductivity between the plate-like silicon composite particles by the carbon nanotubes may decrease, and if the length of the carbon nanotubes is long, the uniformity of the components in the carbon nanotube dispersion used in the process of manufacturing the silicon anode material may decrease, or the size or shape of the aggregated particles of the plate-like silicon composites may become excessively non-uniform.
본 발명의 실리콘 음극재에서 카본블랙층은 실리콘카바이드층과 탄소나노튜브를 감싸 코팅되는 형태로 형성되는 층으로서 기존의 리튬이온이차전지에서 흑연과 전해액(또는 전해질) 계면인 SEI(Solid electrolyte interface, 고체 전해질 계면)의 형성량과 형성관계를 유지시키는 역할을 하고 소재 변화로 인해 전해액(또는 전해질)을 변경해야 하는 불편함을 없애 줄 수 있으며, 탄소나노튜브와 함께 전기전도성을 향상시킬 수 있다.In the silicon anode material of the present invention, the carbon black layer is a layer formed by wrapping and coating a silicon carbide layer and carbon nanotubes, and plays a role in maintaining the formation amount and formation relationship of SEI (Solid electrolyte interface), which is an interface between graphite and an electrolyte (or electrolyte) in a conventional lithium ion secondary battery, and can eliminate the inconvenience of having to change the electrolyte (or electrolyte) due to a change in material, and can improve electrical conductivity together with carbon nanotubes.
본 발명의 일 실시예에 따르면, 카본블랙층은 코팅층은 평균 두께가 3 내지 20㎚일 수 있다. 카본블랙층의 평균 두께가 3㎚ 미만일 경우 표면에 카본 코팅층이 점 형태로 불균일하게 형성되어 코팅이 안된 부분이 다수 발생하므로 수명 향상 효과가 크지 않을 수 있으며, 20㎚ 초과일 경우 과도한 코팅으로 카본 코팅층 내부에 공극이 많아져서 리튬이 공극을 채우고 다시 빠져나가지 않아 비가역 용량이 크게 늘어날 수 있다.According to one embodiment of the present invention, the carbon black layer may have an average thickness of 3 to 20 nm. When the average thickness of the carbon black layer is less than 3 nm, the carbon coating layer is formed unevenly in the form of dots on the surface, so that many uncoated areas occur, and thus the lifespan improvement effect may not be significant. When the average thickness exceeds 20 nm, excessive coating may increase the number of pores inside the carbon coating layer, so that lithium fills the pores and does not escape again, which may significantly increase the irreversible capacity.
본 발명의 일 실시예에 따르면 카본블랙층까지 형성된 판상 실리콘 응집체는 평균 직경이 바람직하게는 2 내지 50㎛, 보다 바람직하게는 2 내지 30㎛, 가장 바람직하게는 2 내지 25㎛일 수 있다. 판상 실리콘 응집체의 평균 직경이 작으면 리튬이온이차전지에 사용하는 상용 흑연 입자와 균질하게 혼합되기 어려울 수 있고 판상 실리콘 응집체의 평균 직경이 크면 흑연과 혼합 시 빈공간이 많이 형성되어 전극의 충진율이 저하될 수 있다. 바람직한 크기 범위의 판상 실리콘 응집체는 상용 흑연과 종횡비가 유사한 입자로서, 흑연과 혼합 시 특별한 공정 설계 변경 없이도 기존의 건식 밀링기나 건식 고속회전혼합기를 사용하는 공정을 그대로 활용할 수 있는 장점이 있다.According to one embodiment of the present invention, the plate-like silicon aggregates formed up to the carbon black layer may preferably have an average diameter of 2 to 50 μm, more preferably 2 to 30 μm, and most preferably 2 to 25 μm. If the average diameter of the plate-like silicon aggregates is small, it may be difficult to homogeneously mix with commercial graphite particles used in lithium ion secondary batteries, and if the average diameter of the plate-like silicon aggregates is large, many empty spaces may be formed when mixed with graphite, which may reduce the filling rate of the electrode. The plate-like silicon aggregates having a preferred size range are particles having a similar aspect ratio to commercial graphite, and thus have the advantage of being able to utilize a process using an existing dry milling machine or dry high-speed rotary mixer as is without any special process design change when mixed with graphite.
본 발명의 실리콘 음극재는 판상 실리콘 응집체와 혼합되는 흑연을 더 포함할 수 있고, 흑연은 전지의 충전용량과 수명을 향상시킬 수 있다.The silicon anode material of the present invention may further include graphite mixed with the plate-shaped silicon aggregate, and the graphite may improve the charging capacity and lifespan of the battery.
본 발명의 일 실시예에 따르면, 흑연 입자는 10 내지 30㎛ 바람직하게는 12 내지 26㎛일 수 있고, 리튬이온이차전지에 사용하는 상용 흑연 입자의 크기 범위라면 특별히 제한되지 않을 수 있다.According to one embodiment of the present invention, the graphite particles may have a size of 10 to 30 μm, preferably 12 to 26 μm, and may not be particularly limited as long as it is within the size range of commercial graphite particles used in lithium ion secondary batteries.
본 발명의 다른 일 실시예에 따르면, 판상 실리콘 응집체와 흑연은 1 내지 20 : 80 내지 99의 중량비로 혼합될 수 있고, 보다 바람직하게는 5 내지 15 : 85 내지 90의 중량비로 혼합될 수 있다. 판상 실리콘 응집체의 함량이 1중량% 보다 낮을 경우 흑연 혼합에 따른 실리콘 음극재의 충전용량 증가 효과가 충전용량 편차 이내에 속하여 흑연에 의한 효과를 기대하기 어렵고 20중량%를 초과할 경우 음극에 리튬 충전 시 전체 전극의 두께가 흑연만 사용할 경우 대비 30% 이상 커져서 바인더가 견디지 못하고 구리 집전체와 실리콘 복합체 연결부에 크랙이 발생하여 충방전 수명이 급격히 떨어질 수 있다.According to another embodiment of the present invention, the platelet silicon aggregate and the graphite may be mixed in a weight ratio of 1 to 20:80 to 99, more preferably 5 to 15:85 to 90. When the content of the platelet silicon aggregate is lower than 1 wt%, the effect of increasing the charge capacity of the silicon anode material due to mixing of graphite falls within the charge capacity deviation, making it difficult to expect the effect due to the graphite, and when it exceeds 20 wt%, when charging lithium into the anode, the thickness of the entire electrode increases by more than 30% compared to when only graphite is used, so that the binder cannot withstand it, and cracks may occur at the connection between the copper current collector and the silicon composite, which may rapidly reduce the charge/discharge life.
이상의 본 발명에 따른 실리콘 음극재는 하기의 제조방법에 따라 제조할 수 있고 이에 대하여 도면을 통해 자세히 설명한다.The silicon negative electrode material according to the present invention can be manufactured according to the following manufacturing method, which will be described in detail with reference to the drawings.
본 발명은 판상 실리콘 입자 표면을 산화시켜 산화층을 형성하는 산화층 형성 단계, 탄소나노튜브, 바인더 및 용매를 혼합한 탄소나노튜브 분산액 준비 단계, 탄소나노튜브 분산액에 산화층 형성 단계에서 산화층이 형성된 판상 실리콘 입자를 분산한 혼합 분산액 제조 단계, 혼합 분산액을 건조하여 산화층이 형성된 판상 실리콘 입자의 산화층 표면에 복수의 탄소나노튜브가 그물형 네트워크 구조를 형성하며 결합된 제1 판상 실리콘 복합체 및 이들의 응집체인 제1 판상 실리콘 응집체 제조 단계, 제1 판상 실리콘 복합체의 실리콘 산화층 외각을 탄화시켜 실리콘 카바이드층을 형성하는 탄화 단계 및, 제1 판상 실리콘 복합체의 실리콘 카바이드층 및 복수의 탄소나노튜브를 코팅하는 카본블랙층이 형성된 제2 판상 실리콘 복합체 및 이들의 응집체인 제2 판상 실리콘 응집체 제조 단계를 포함하는 리튬이온이차전지용 실리콘 음극재의 제조방법을 제공할 수 있다.The present invention can provide a method for manufacturing a silicon anode material for a lithium ion secondary battery, including a step of forming an oxide layer by oxidizing the surface of platelet silicon particles to form an oxide layer, a step of preparing a carbon nanotube dispersion by mixing carbon nanotubes, a binder, and a solvent, a step of preparing a mixed dispersion by dispersing platelet silicon particles, in which an oxide layer is formed in the oxide layer forming step, in the carbon nanotube dispersion, a step of drying the mixed dispersion to form a first platelet silicon composite and a first platelet silicon aggregate which is an aggregate thereof, in which a plurality of carbon nanotubes are combined to form a mesh network structure on the surface of the oxide layer of the platelet silicon particles, a carbonization step of carbonizing the outer shell of the silicon oxide layer of the first platelet silicon composite to form a silicon carbide layer, and a step of manufacturing a second platelet silicon composite and a second platelet silicon aggregate which is an aggregate thereof, in which a carbon black layer coating the silicon carbide layer of the first platelet silicon composite and a plurality of carbon nanotubes are formed.
본 발명의 실리콘 음극재에 포함되는 판상 실리콘 응집체는 판상 실리콘 복합체가 응집 및 결합되어 형성된 것으로서, 판상 실리콘 복합체의 원료는 폐실리콘 커프로부터 얻은 판상 실리콘 입자(11)를 사용할 수 있다. 원료인 판상 실리콘 입자는 절삭과정에서 강한 힘이 주어지면서 실리콘이 단결정에서 판상으로 떨어져 나오므로 휘고 말리게 되고, 많은 미세 단결정이 약하게 부착된 형태로 만들어질 수 있다. 이에, 판상 실리콘 입자는 파쇄 전처리를 통해 음극재에 더 적합한 상태로 만들어 사용될 수 있다. The plate-shaped silicon aggregate included in the silicon anode material of the present invention is formed by aggregation and bonding of plate-shaped silicon complexes, and the raw material of the plate-shaped silicon complex can use plate-shaped silicon particles (11) obtained from waste silicon kerf. The plate-shaped silicon particles as the raw material are bent and rolled when a strong force is applied during the cutting process, so that silicon is separated from a single crystal into a plate shape, and can be made into a form in which many fine single crystals are weakly attached. Accordingly, the plate-shaped silicon particles can be made into a state more suitable for the anode material through a crushing pretreatment and used.
판상 실리콘 입자의 전처리는 구체적으로, 습식밀링하고 건조 공정에 따라 수행할 수 있고 판상 실리콘을 습식밀링하는 방식은 비드밀(볼밀), 초음파분산, 고압균질기분산 방식이 사용될 수 있다. 먼저, 비드밀 방식은 물 또는 유기용매에 판상 실리콘 입자를 5~30중량% 범위로 혼합한 후 지르코니아 또는 알루미나 용기에서 지르코니아 또는 알루미나 비드과 함께 회전하여 볼간의 마찰력과 충격력에 의해 파쇄하는 방식으로서, 비드밀은 0.5 내지 3㎜ 직경의 비드를 사용하고, 용기의 직경 100㎜ 기준 1,000 내지 5000rpm으로 회전시켜 파쇄하는 것이 바람직할 수 있다. 비드밀 사용 시, 비드의 직경이 0.5㎜ 미만일 경우 충격력이 약해져 파쇄가 거의 되지 않을 수 있으며, 3㎜ 초과일 경우 비드의 숫자가 너무 적어져서 판상 실리콘 입자와 충돌 확률이 저하되어 파쇄 시간이 불필요하게 길어질 수 있다. 또한 회전속도가 1,000rpm 미만일 경우 저에너지로 파쇄에 필요한 에너지가 부족하여 파쇄가 거의 되지 않을 수 있고, 5,000rpm 초과일 경우 과도한 고에너지로 비드 마모가 발생하고 불순물이 판상 실리콘 입자와 섞일 수 있다. 다음으로 초음파분산 방식은 초음파 진동자에 증폭혼과 진동혼을 부착하여 용액에 초음파 진동을 가하여 용액 내 알갱이를 분산 또는 파괴하는 방식이다. 초음파분산은 주파수 20 내지 35KHz, 진폭 20 내지 200㎛, 진동자 전력소비량 200W 이상 조건에서 판상 실리콘 입자를 처리하는 것이 바람직하다. 또한, 초음파분산은 물 또는 유기용매에 판상 실리콘 입자를 30중량% 이하 범위로 혼합한 후 진동자 다수가 일렬로 배치된 유로를 통과하면서 다수 진동자의 초음파진동을 받아서 파쇄가 가능하다. 이때, 진동자 전력소비량이 200W 미만일 경우 너무 낮은 에너지로 파쇄가 거의 되지 않을 수 있고 주파수가 20 KHz 미만일 경우 가청 주파파수를 넘기지 못해 운영이 용이하지 않을 수 있고 35 KHz 초과일 경우 진동자와 진동발생기의 내구성만 떨어뜨리고 파쇄와 작업환경 개선 효과는 없을 수 있으며, 물 또는 유기용매에 판상 실리콘이 30중량% 초과 범위로 혼합될 경우 점도가 너무 높아져 초음파 진동의 전달 범위가 넓게 이루어지지 않을 수 있다. 이어서 고압균질기는 펌프를 사용하여 압력을 가하여 용액을 반대방향의 미세노즐로 통과시켜서 용액 내 분말을 분산시키거나 파괴하는 장치이다. 고압균질기는 미세노즐 통과 후 다이아몬드판에 충돌시키는 방법, 양방향으로 노즐을 통과시켜 용액끼리 충돌시키는 방법 등 충돌을 결합하여 사용하는 방식도 있고 본 발명에 따른 실리콘 음극재에 적합한 판상 실리콘 입자를 얻기 위해 고압균질기분산 방식으로 물 또는 유기용매에 판상 실리콘 입자를 30중량% 이하 범위로 혼합한 후, 500bar 이상으로 가압하여 50 내지 200㎛의 미세 노즐을 통과시키고 다이아몬드판에 충돌 또는 상호 충돌하는 방식을 사용하는 것이 좋을 수 있는데, 물 또는 유기용매에 판상 실리콘 입자가 30중량% 초과 범위로 혼합되면, 점도가 너무 높아져 미세 노즐에 주입이 용이하지 않을 수 있고 압력이 500bar 미만일 경우 충돌에너지가 약해져 파쇄가 거의 되지 않을 수 있으며, 미세노즐 직경이 50㎛ 미만일 경우 잦은 노즐 층힘의 발생이 나타나고 200㎛ 초과일 경우 충돌에너지가 너무 약해져서 파쇄가 거의 되지 않을 수 있다.Specifically, the pretreatment of the plate-shaped silicon particles can be performed by wet milling and drying processes, and methods for wet milling the plate-shaped silicon may include a bead mill (ball mill), ultrasonic dispersion, and high-pressure homogenizer dispersion. First, the bead mill method is a method in which plate-shaped silicon particles are mixed in water or an organic solvent in a range of 5 to 30 wt%, and then rotated together with zirconia or alumina beads in a zirconia or alumina container to crush the particles by frictional force and impact force between the balls. It may be preferable that the bead mill use beads having a diameter of 0.5 to 3 mm and rotate at 1,000 to 5,000 rpm based on a container diameter of 100 mm to crush. When using a bead mill, if the diameter of the beads is less than 0.5 mm, the impact force may be weak and crushing may hardly occur, and if it exceeds 3 mm, the number of beads may be too small, which may reduce the probability of collision with the plate-shaped silicon particles, and thus the crushing time may become unnecessarily long. In addition, when the rotation speed is less than 1,000 rpm, the energy required for crushing may be insufficient due to low energy, so crushing may hardly occur, and when it exceeds 5,000 rpm, excessive high energy may cause bead wear and impurities may be mixed with the plate-shaped silicon particles. Next, the ultrasonic dispersion method is a method in which an amplifying horn and a vibrating horn are attached to an ultrasonic vibrator to apply ultrasonic vibration to the solution to disperse or destroy the grains in the solution. It is preferable that ultrasonic dispersion process plate-shaped silicon particles under the conditions of a frequency of 20 to 35 kHz, an amplitude of 20 to 200 ㎛, and a vibrator power consumption of 200 W or more. In addition, ultrasonic dispersion is possible by mixing plate-shaped silicon particles in water or an organic solvent in a range of 30 wt% or less, and then receiving ultrasonic vibrations from a plurality of vibrators while passing through a path in which a plurality of vibrators are arranged in a row, so that crushing is possible. At this time, if the power consumption of the vibrator is less than 200 W, the energy may be too low to cause almost no crushing, and if the frequency is less than 20 KHz, it may not be easy to operate because it cannot exceed the audible frequency, and if it exceeds 35 KHz, only the durability of the vibrator and vibration generator may be reduced and the crushing and working environment improvement effects may not be achieved, and if the plate silicon is mixed in water or an organic solvent in excess of 30 wt%, the viscosity may become too high and the transmission range of the ultrasonic vibration may not be wide. Next, the high-pressure homogenizer is a device that applies pressure using a pump to disperse or destroy the powder in the solution by passing the solution through a micro-nozzle in the opposite direction. A high-pressure homogenizer can be used in a way that combines collisions, such as a method of passing through a fine nozzle and then colliding with a diamond plate, a method of passing the nozzle in both directions and colliding the solutions with each other, and a method of mixing the plate-shaped silicon particles in water or an organic solvent in a range of 30 wt% or less using a high-pressure homogenizer dispersion method to obtain plate-shaped silicon particles suitable for the silicon anode material according to the present invention, and then applying pressure of 500 bar or more to pass through a fine nozzle of 50 to 200 ㎛ and colliding with or between diamond plates may be used. However, if the plate-shaped silicon particles are mixed in water or an organic solvent in a range exceeding 30 wt%, the viscosity may become too high to be easily injected into the fine nozzle, and if the pressure is less than 500 bar, the collision energy may be weak and crushing may hardly occur, and if the fine nozzle diameter is less than 50 ㎛, frequent nozzle layering may occur, and if it exceeds 200 ㎛, the collision energy may be too weak and crushing may hardly occur.
이상의 전처리에 따라 준비된 판상 실리콘 입자는 본 발명의 일 예시인 도 8의 흐름도에 따라 본 발명에서 목적하는 실리콘 음극재를 제조할 수 있다.The plate-shaped silicon particles prepared according to the above pretreatment can be used to manufacture the silicon negative electrode material desired in the present invention according to the flow chart of Fig. 8, which is an example of the present invention.
본 발명의 일 실시예에 따르면 비드밀, 분산기 및 균질기 중 어느 하나로부터 얻은 판상 실리콘 입자는 실리콘커프 건조 단계(S110)에 따라, 실리콘커프로부터 얻은 판상 실리콘 입자를 건조된 분말 상태로 회수되는 것이 바람직할 수 있다. 이때, 건조를 위한 장치는 수분 및 유기용매 기화 기능이 있는 다양한 장치의 사용이 가능하나, 스프레이 드라이어, 디스크 드라이어를 사용하는 것이 바람직하다. 먼저 스프레이 드라이어는 파쇄된 판상 실리콘 입자가 포함된 분산용액을 스프레이 노즐 또는 회전원판 노즐(Atomizer)을 통해 대기 중에 퍼트리고 뜨거워진 기체를 노즐 주변을 회전하도록 주입하여 용액이 비산된 상태에서 건조하는 장치로 낮은 겉보기 밀도를 가지는 건조 분말을 얻을 수 있는 장점이 있다. 다음으로 디스크 드라이어는 열효율이 높으며, 가열된 회전디스크에 파쇄된 판상 실리콘 입자가 포함된 분산용액을 조금씩 떨어뜨려서 건조시키고 건조 잔류물인 파쇄 및 건조된 판상 실리콘 입자를 세라믹 나이프로 긁어서 회수하는 방식으로 열 효율이 좋은 장점이 있다. According to one embodiment of the present invention, the plate-shaped silicon particles obtained from any one of a bead mill, a disperser, and a homogenizer may be preferably recovered in a dried powder state according to the silicon cuff drying step (S110). At this time, various devices having moisture and organic solvent vaporization functions can be used as the drying device, but it is preferable to use a spray dryer or a disk dryer. First, the spray dryer is a device that disperses a dispersion solution containing crushed plate-shaped silicon particles into the air through a spray nozzle or a rotating disk nozzle (atomizer) and injects a heated gas to rotate around the nozzle so that the solution is dried in a scattered state, and thus has the advantage of obtaining a dry powder having a low apparent density. Next, the disk dryer has the advantage of high thermal efficiency and has the advantage of high thermal efficiency in that it gradually drops a dispersion solution containing crushed plate-shaped silicon particles onto a heated rotating disk to dry them, and then scrapes the crushed and dried plate-shaped silicon particles, which are the dry residue, with a ceramic knife to recover them.
본 발명의 일 실시예에 따르면, 실리콘커프 건조 단계(S110) 이후 얻은 판상 실리콘 입자는 폐실리콘커프에 있던 수분과 윤활제가 제거된 상태지만, 후공정에서 기체와의 용이한 반응을 위해, 실리콘커프 해쇄 단계(S120)를 거쳐 판상 실리콘 입자 간의 공간을 형성할 수 있다. 실리콘커프의 파쇄 및 건조에 따라 얻을 수 있는 판상 실리콘 입자는 1 내지 2g/㎤의 겉보기 밀도를 가지는데, 공기 하에서 3,000rpm으로 분쇄하는 것으로, 0.1 내지 0.4g/㎤의 겉보기 밀도를 가지는 판상 실리콘 입자를 획득할 수 있고, 해쇄 단계를 거쳐 얻은 판상 실리콘 입자는 입자 간의 평균거리가 파쇄 및 건조 단계를 거쳐 얻은 판상 실리콘 입자보다 3 내지 10배 늘어날 수 있어, 도 1과 같이 산화층이 보다 균일하게 형성되도록 할 수 있는 상태의 판상 실리콘 입자(11)를 얻을 수 있다.According to one embodiment of the present invention, the plate-shaped silicon particles obtained after the silicon cuff drying step (S110) are in a state in which moisture and lubricant in the waste silicon cuff are removed, but a silicon cuff disintegration step (S120) can be performed to form a space between the plate-shaped silicon particles for easy reaction with gas in a post-process. The plate-shaped silicon particles obtainable by the silicon cuff disintegration and drying step have an apparent density of 1 to 2 g/cm2, and by disintegrating at 3,000 rpm in air, plate-shaped silicon particles having an apparent density of 0.1 to 0.4 g/cm2 can be obtained, and the plate-shaped silicon particles obtained through the disintegration step can have an average distance between particles that is 3 to 10 times greater than that of the plate-shaped silicon particles obtained through the disintegration and drying steps, so that plate-shaped silicon particles (11) in a state in which an oxide layer is formed more uniformly, as shown in FIG. 1, can be obtained.
다음 단계인 산화층 형성(S130) 단계 설명에 앞서, 본 발명의 제조방법에서 판상 실리콘 복합체는 제1 판상 실리콘 복합체와 제2 판상 실리콘 복합체로 구분할 수 있다. Before explaining the next step, the oxidation layer formation step (S130), the plate-like silicon composite in the manufacturing method of the present invention can be divided into a first plate-like silicon composite and a second plate-like silicon composite.
본 발명에서 제1 판상 실리콘 복합체는 산화층이 형성된 판상 실리콘 입자에서 산화층 표면에 복수의 탄소나노튜브가 그물형 네트워크 구조를 형성한 복합체이고, 제2 판상 실리콘 복합체는 제1차 판상 실리콘 복합체에 실리콘카바이드층 및 카본블랙층이 형성된 복합체 입자로서 이의 단면은 도 2와 같은 구조로 표현될 수 있다.In the present invention, the first plate-shaped silicon composite is a composite in which a plurality of carbon nanotubes form a mesh network structure on the surface of an oxide layer formed on plate-shaped silicon particles having an oxide layer formed thereon, and the second plate-shaped silicon composite is a composite particle in which a silicon carbide layer and a carbon black layer are formed on the first plate-shaped silicon composite, and a cross-section thereof can be expressed as a structure as shown in FIG. 2.
본 발명에 따르면 제1 판상 실리콘 복합체가 응집 및 연결되어 제1 판상 실리콘 응집체를 형성하고 제1 판상 실리콘 응집체가 실리콘카바이드층 형성 및 카본블랙 코팅 단계를 거쳐 제2 판상 실리콘 응집체를 형성할 수 있게 된다. 이때 제2 판상 실리콘 응집체는 제1 판상 실리콘 복합체에 실리콘카바이드층 및 카본블랙층이 형성된 복합체인 제2 판상 실리콘 복합체가 응집 및 연결된 상태일 수 있다.According to the present invention, a first plate-shaped silicon composite is aggregated and connected to form a first plate-shaped silicon aggregate, and the first plate-shaped silicon aggregate can form a second plate-shaped silicon aggregate through the steps of forming a silicon carbide layer and coating a carbon black. At this time, the second plate-shaped silicon aggregate can be a composite in which a silicon carbide layer and a carbon black layer are formed on the first plate-shaped silicon composite, and the second plate-shaped silicon composite can be in a state in which the second plate-shaped silicon composite is aggregated and connected.
본 발명에서 목적하는 실리콘 음극재는 제2 판상 실리콘 응집체를 포함하는 음극재로서 판상 실리콘 복합체 및 이의 응집체에 대해 이하에서 산화층 형성(S130) 단계를 시작으로 보다 구체적으로 설명한다.The silicon anode material targeted in the present invention is an anode material including a second plate-shaped silicon aggregate, and the plate-shaped silicon composite and the aggregate thereof will be described in more detail below, starting with the oxidation layer formation step (S130).
본 발명에서 산화층 형성(S130) 단계는 판상 실리콘 입자(11)의 표면을 산화시켜 실리콘 입자 외각에 실리콘 산화물층(12)을 형성하는 단계일 수 있다.In the present invention, the oxide layer formation step (S130) may be a step of forming a silicon oxide layer (12) on the outer surface of the silicon particle by oxidizing the surface of the plate-shaped silicon particle (11).
본 발명의 일 실시예에 따르면, 산화층 형성(S130) 단계는 로타리킬른(Rotary kiln)을 사용하고 판상 실리콘 입자에 산화제를 투입 후 700 내지 1,100℃로 5 내지 30분 동안 가열하여 진행할 수 있다. 가열온도가 700℃미만일 경우, 산화층의 형성 속도가 너무 느려져서 반응시간이 과도하게 길어짐에 따라 산화층이 전체적으로 형성되지 않거나 원하는 두께로 형성하기 어려울 수 있고 가열온도가 1,100℃를 초과하는 경우, 과도한 온도로 판상 실리콘 입자가 손상되거나 공정비용이 불필요하게 증대될 수 있어 비효율적일 수 있다. 로타리킬른은 연속식 가열로를 사용하므로 우수한 열효율로 작업시간을 단축할 수 있고 로타리킬른은 피처리물을 킬른 본체에 투입하기 위한 투입부, 가열하기 위한 킬른 본체를 구비하는 열처리부, 가열처리된 피처리물을 배출하는 배출부로 구성될 수 있으며, 로타리킬른은 피처리물이 계속 혼합하면서 이동하므로 균일하고 두께가 두꺼운 산화층이 형성되어 입자 간의 산화층 비율의 차이를 줄일 수 있다.According to one embodiment of the present invention, the step of forming an oxide layer (S130) may be performed by using a rotary kiln, injecting an oxidizer into the plate-shaped silicon particles, and then heating at 700 to 1,100°C for 5 to 30 minutes. If the heating temperature is less than 700°C, the formation speed of the oxide layer may be too slow, so that the reaction time may become excessively long, and thus the oxide layer may not be formed entirely or may be difficult to form with a desired thickness. In addition, if the heating temperature exceeds 1,100°C, the plate-shaped silicon particles may be damaged by the excessive temperature or the process cost may unnecessarily increase, which may be inefficient. Since the rotary kiln uses a continuous heating furnace, it can shorten the working time with excellent heat efficiency, and the rotary kiln can be composed of an inlet for injecting the material to be treated into the kiln body, a heat treatment section having a kiln body for heating, and a discharge section for discharging the heated material to be treated. Since the material to be treated is continuously mixed and moved in the rotary kiln, a uniform and thick oxide layer is formed, which can reduce the difference in the oxide layer ratio between particles.
본 발명의 다른 일 실시예에 따르면, 산화층 형성(S130) 단계에서 사용하는 산화제는 산소, 물, 과산화수소 중 하나 이상을 사용할 수 있고, 산화제의 종류에 따라 가열 온도를 조절할 수 있다. 산화제로 과산화수소를 사용할 경우 700 내지 1,100℃로 가열할 수 있고, 산화제로 산소를 사용할 경우, 900 내지 1,100℃로 가열할 수 있다. According to another embodiment of the present invention, the oxidizing agent used in the oxidation layer formation step (S130) may be at least one of oxygen, water, and hydrogen peroxide, and the heating temperature may be controlled depending on the type of the oxidizing agent. When hydrogen peroxide is used as the oxidizing agent, heating may be performed at 700 to 1,100°C, and when oxygen is used as the oxidizing agent, heating may be performed at 900 to 1,100°C.
본 발명에서 탄소나노튜브 분산액 혼합(S140) 단계는 탄소나노튜브와 폴리머 바인더가 균질 분산된 탄소나노튜브 분산액을 준비하는 단계와 산화층 형성(S130) 단계에서 제조한 실리콘 산화층이 형성된 판상 실리콘입자를 투입 및 균질 혼합한 혼합 분산액을 제조하는 단계를 포함할 수 있다. 탄소나노튜브 분산액 준비 단계는 고압균질기를 사용하는 등 특별히 제한되지 않는다. 탄소나노튜브 분산액에 실리콘 산화층이 형성된 판상 실리콘입자를 혼합하는 혼합 분산액 제조 단계는 3,000rpm 이상의 회전식 호모게나이저나 초음파분산기로 가능하고 분산 정도는 상온의 진동이 없는 상태에서 10cm 높이로 침전 시작 시 1시간 경과 후 침전물 5% 이하로 발생하는 분산도가 바람직할 수 있다.In the present invention, the step of mixing a carbon nanotube dispersion (S140) may include a step of preparing a carbon nanotube dispersion in which carbon nanotubes and a polymer binder are homogeneously dispersed, and a step of preparing a mixed dispersion by introducing and homogeneously mixing platelet silicon particles having a silicon oxide layer formed thereon, manufactured in the step of forming an oxide layer (S130). The step of preparing a carbon nanotube dispersion is not particularly limited, such as by using a high-pressure homogenizer. The step of preparing a mixed dispersion by mixing platelet silicon particles having a silicon oxide layer formed thereon into a carbon nanotube dispersion can be performed by a rotary homogenizer or an ultrasonic disperser at 3,000 rpm or higher, and the degree of dispersion may be preferably a degree of dispersion in which 5% or less of sediment is generated after 1 hour from the start of sedimentation at a height of 10 cm in a vibration-free state at room temperature.
본 발명의 일 실시예에 따르면, 탄소나노튜브 분산액은 탄소나노튜브, 폴리머 바인더 및 용매를 균질 혼합하여 준비할 수 있다. 폴리머 바인더는 탄소나노튜브 분산액에서 탄소나노튜브 분산 상태를 안정화시키면서 건조 시 탄소나노튜브의 산화층에 부착을 도와주는 성분으로서 수계 폴리머인 폴리비닐아세테이트(PVA), 폴리닐피놀리돈(PVP), 에틸렌비닐아세테이트(EVA) 및 열가소성폴리우레탄(TPU)로 이루어지는 군에서 선택되는 하나 이상인 유기계 폴리머를 사용할 수 있다. 폴리머 바인더는 탄소나노튜브 : 폴리머 바인더의 중량비로 1: 0.5 내지 3, 바람직하게는 1: 0.5 내지 2.5로 사용할 수 있고 바인더의 함량이 적은 경우 탄소나노튜브의 결합 저하가 나타날 수 있으며 바인더의 함량이 많은 경우 탄소나노튜브의 응집 현상 등이 나타날 수 있다. 용매는 바람직하게는 물, 증류수, 정제수 등을 사용할 수 있다.According to one embodiment of the present invention, a carbon nanotube dispersion can be prepared by homogeneously mixing carbon nanotubes, a polymer binder, and a solvent. The polymer binder is a component that stabilizes the dispersion state of carbon nanotubes in the carbon nanotube dispersion and helps the attachment of the carbon nanotubes to an oxide layer during drying. At least one organic polymer selected from the group consisting of aqueous polymers such as polyvinylacetate (PVA), polynylpyrrolidone (PVP), ethylene vinyl acetate (EVA), and thermoplastic polyurethane (TPU) can be used. The polymer binder can be used in a weight ratio of carbon nanotubes: polymer binder of 1:0.5 to 3, preferably 1:0.5 to 2.5, and when the content of the binder is low, a decrease in the bonding of carbon nanotubes may occur, and when the content of the binder is high, aggregation of carbon nanotubes may occur. The solvent that can be used is preferably water, distilled water, purified water, etc.
본 발명의 다른 일 실시예에 따르면, 탄소나노튜브 분산액에 실리콘 산화층이 형성된 판상 실리콘입자를 분산한 혼합 분산액에는 실리콘 산화층이 형성된 판상 실리콘입자 100 중량부 대비 탄소나노튜브가 2 내지 15 중량부로 포함될 수 있다. 탄소나노튜브의 함량이 적은 경우 전기전도성 향상을 위한 충분한 범위로 판상 실리콘 복합체 표면을 덮기 어려울 수 있고 탄소나노튜브 함량이 많은 경우 판상 실리콘 복합체 표면의 면적을 지나치게 넓게 덮어 탄소나노튜브 함량 증가에도 불구하고 전기전도성 향상 효과는 크지 않을 수 있다. 혼합 분산액의 다른 조성 성분으로 폴리머 바인더는 판상 실리콘 입자 100 중량부 대비 5 내지 15 중량부 포함될 수 있고, 용매는 판상 실리콘 입장 100 중량부 대비 900 내지 1000 중량부 포함될 수 있다.According to another embodiment of the present invention, a mixed dispersion in which plate-shaped silicon particles having a silicon oxide layer formed thereon are dispersed in a carbon nanotube dispersion may contain 2 to 15 parts by weight of carbon nanotubes relative to 100 parts by weight of the plate-shaped silicon particles having a silicon oxide layer formed thereon. If the content of the carbon nanotubes is small, it may be difficult to cover the surface of the plate-shaped silicon composite to a sufficient extent for improving electrical conductivity, and if the content of the carbon nanotubes is large, the surface area of the plate-shaped silicon composite may be covered too widely, so that the effect of improving electrical conductivity may not be significant despite an increase in the content of the carbon nanotubes. As other composition components of the mixed dispersion, a polymer binder may be contained in an amount of 5 to 15 parts by weight relative to 100 parts by weight of the plate-shaped silicon particles, and a solvent may be contained in an amount of 900 to 1,000 parts by weight relative to 100 parts by weight of the plate-shaped silicon composite.
본 발명에서 분산액 건조(S150) 단계는 혼합 분산액을 건조하는 단계로서 제1 판상 실리콘 응집체를 제조하는 단계를 포함할 수 있다. 제1 판상 실리콘 응집체는 제1 판상 실리콘 복합체가 응집 및 결합되어 형성된 입자로서, 제1 판상 실리콘 복합체는 실리콘 산화층(12)이 형성된 판상 실리콘 입자에서 산화층 표면에 복수의 탄소나노튜브(14)가 그물형 네트워크 구조를 형성하며 폴리머 바인더에 의해 결합된 복합체이다.In the present invention, the dispersion drying step (S150) is a step of drying the mixed dispersion, and may include a step of manufacturing a first plate-shaped silicon aggregate. The first plate-shaped silicon aggregate is a particle formed by agglomeration and bonding of a first plate-shaped silicon complex, and the first plate-shaped silicon complex is a complex in which a plurality of carbon nanotubes (14) form a mesh network structure on the surface of the oxide layer in plate-shaped silicon particles on which a silicon oxide layer (12) is formed and are bonded by a polymer binder.
본 발명의 일 실시예에 따르면, 건조는 디스크 건조와 스프레이 드라이가 바람직할 수 있다. 디스크 건조는 고온의 회전하는 원형 디스크에 분산액을 흘리고 건조된 분말을 스크레퍼로 긁어내는 형식이고 스프레이 드라이는 분산액을 분무기나 회전 원판에 떨어뜨려서 작은 액적으로 퍼뜨리고 고온의 기체를 불어넣어 공중에 떠있는 상태어서 건조하는 방식이다. 보다 적합하게는 스프레이 드라이 건조를 통해 도 3의 사진과 같이 구형이나 구형에 가까운 타원형, 찌그러진 타원형 등의 그래뉼(granule) 형상으로 각진 부분이 적은 제1 판상 실리콘 응집체 입자를 만드는 것이 좋다. 스프레이 드라이 후 입자나 디스크 건조 후 파쇄한 제1 판상 실리콘 응집체의 크기는 평균 직경 2 내지 50㎛, 바람직하게는 2 내지 25㎛일 수 있다. 응집체의 크기가 작은 경우 흑연 입자와 혼합 시 균질 분산이 어려울 수 있고 지나치게 큰 경우 흑연과 혼합 시 빈공간이 많이 형성되어 전극의 충진율이 저하될 수 있다.According to one embodiment of the present invention, drying may be preferably disk drying and spray drying. Disk drying is a method in which a dispersion is poured onto a high-temperature rotating circular disk and the dried powder is scraped off with a scraper, and spray drying is a method in which a dispersion is dropped onto a sprayer or a rotating disk to spread small droplets and blown with high-temperature gas so that the particles are suspended in the air and dried. More preferably, it is preferable to use spray drying to produce first plate-shaped silicon aggregate particles having a spherical or nearly spherical shape, a distorted spherical shape, or the like granule shape with fewer angular parts, as shown in the photograph of Fig. 3. The size of the particles after spray drying or the first plate-shaped silicon aggregates crushed after disk drying may have an average diameter of 2 to 50 μm, preferably 2 to 25 μm. If the size of the aggregate is small, it may be difficult to uniformly disperse it when mixed with graphite particles, and if it is too large, many empty spaces may be formed when mixed with graphite, which may reduce the filling rate of the electrode.
본 발명의 일 실시예에 따르면, 혼합 분산액의 디스크 건조 또는 스프레이 드라이에 의해 산화층이 형성된 판상 실리콘 입자의 산화층 표면에 복수의 탄소나노튜브가 그물형 네트워크 구조를 형성하며 결합된 제1 판상 실리콘 복합체 및 이를 포함하는 제1 판상 실리콘 응집체가 제조된다. 도 3과 같이 형성된 제1 실리콘 응집체를 확대한 도 4 및 도 5를 통해 제1 판상 실리콘 복합체 구조를 명확히 확인할 수 있다. 탄소나노튜브는 폴리머 바인더에 의해 실리콘 산화층 표면에서 서로 교차되어 결합하면서 불규칙한 그물형 구조를 형성할 수 있고, 도 5와 같이 제1 판상 실리콘 복합체의 실리콘 산화층 표면적을 5 내지 30% 정도 뒤덮은 그물형 네트워크 구조를 형성하며 결합될 수 있다. 또한 탄소나노튜브는 도 4 및 도 5와 같이 인접한 복수의 제1 판상 실리콘 복합체를 연결하여 복합체 입자 간 물리적인 전기전도 경로를 형성할 수 있어 음극의 전기전도도를 보다 향상할 수 있다. According to one embodiment of the present invention, a first platelet silicon composite and a first platelet silicon aggregate including the same are manufactured, in which a plurality of carbon nanotubes are bonded to form a mesh network structure on the surface of an oxide layer of platelet silicon particles on which an oxide layer is formed by disk drying or spray drying of a mixed dispersion. The structure of the first platelet silicon composite can be clearly confirmed through FIGS. 4 and 5, which are enlarged views of the first silicon aggregate formed as in FIG. 3. The carbon nanotubes can form an irregular mesh network structure by crossing and bonding to each other on the surface of the silicon oxide layer by a polymer binder, and can be bonded to form a mesh network structure that covers about 5 to 30% of the surface area of the silicon oxide layer of the first platelet silicon composite, as shown in FIG. 5. In addition, the carbon nanotubes can form a physical electrical conduction path between the composite particles by connecting a plurality of adjacent first platelet silicon composites, as shown in FIGS. 4 and 5, thereby further improving the electrical conductivity of the cathode.
본 발명에서 실리콘카바이드 형성(S160) 단계는 탄소원으로부터 실리콘 산화층(12) 외각 표면에 실리콘카바이드층(13)을 형성하는 탄화 단계를 포함할 수 있다. 실리콘카바이드층은 전기전도성 특성을 가진 층으로서 제1 판상 실리콘 복합체의 실리콘 산화층 표면부터 내부를 향해 산화층의 산소 일부가 탄소로 치환되어 형성될 수 있고, 보다 구체적으로는 실리콘 산화층의 산소 2개가 탄소 하나로 치환되며 형성될 수 있다. In the present invention, the silicon carbide forming (S160) step may include a carbonization step of forming a silicon carbide layer (13) on the outer surface of a silicon oxide layer (12) from a carbon source. The silicon carbide layer is a layer having electrically conductive characteristics and may be formed by substituting some of the oxygen in the silicon oxide layer with carbon from the surface of the silicon oxide layer of the first plate-like silicon composite toward the inside, and more specifically, may be formed by substituting two oxygen atoms in the silicon oxide layer with one carbon.
본 발명에 따른 실리콘카바이드층 형성은 비정질의 실리콘 산화층 외각에서 내부로의 1 내지 5㎚ 깊이까지는 가스화 된 탄소와 반응시키는 경우 낮은 온도에서도 빠르게 치환이 가능하다는 것을 발견하여 적용한 것으로서, 본 발명의 일 실시예에 따르면 탄소나노튜브와 폴리머 바인더 분산제가 코팅된 상태인 제1 판상 실리콘 복합체 입자를 900 내지 1100℃로 가열된 킬른에 통과시켜 실리콘카바이드층을 형성할 수 있다. 900℃ 이상의 온도로 가열된 킬른에서 제1 판상 실리콘 복합체의 폴리머 바인더가 분해되어 탄화수소 가스가 발생하고 일부는 잔류탄소를 형성하며, 잔류탄소와 탄화수소 가스의 분해로 발생된 탄소가 실리콘 산화층의 산소와 치환되면서 실리콘카바이드층을 형성한다. 산소가 탄소로 치환됨에 따라, 실리콘 산화층의 표면부터 내면을 향해 5㎚ 깊이까지는 매우 신속하게 실리콘카바이드층이 형성될 수 있다.The formation of a silicon carbide layer according to the present invention was applied by discovering that rapid substitution is possible even at a low temperature when reacting with gasified carbon from the outer surface of an amorphous silicon oxide layer to a depth of 1 to 5 nm from the inner surface, and according to one embodiment of the present invention, a silicon carbide layer can be formed by passing first plate-shaped silicon composite particles coated with carbon nanotubes and a polymer binder dispersant through a kiln heated to 900 to 1100° C. In the kiln heated to a temperature of 900° C. or higher, the polymer binder of the first plate-shaped silicon composite decomposes to generate hydrocarbon gas, some of which forms residual carbon, and the carbon generated by the decomposition of the residual carbon and hydrocarbon gas is substituted with oxygen in the silicon oxide layer to form a silicon carbide layer. As oxygen is substituted with carbon, a silicon carbide layer can be formed very quickly from the surface of the silicon oxide layer to a depth of 5 nm toward the inner surface.
본 발명의 일 실시예에 따르면, 제1 판상 실리콘 복합체의 실리콘 산화층 외각 표면에 실리콘카바이드층이 형성되면서 도 2의 구조에서 보이는 바와 같이 그물형 네트워크 구조를 형성한 탄소나노튜브(14)가 실리콘카바이드층(13)의 외각 표면에 결합된 형태가 될 수 있다. 즉 산화층의 산소가 탄소로 치환되면서 산화층과 산화층에 결합한 탄소나노튜브 사이의 계면에도 실리콘카바이드층이 형성되게 된다.According to one embodiment of the present invention, as a silicon carbide layer is formed on the outer surface of the silicon oxide layer of the first plate-like silicon composite, carbon nanotubes (14) forming a mesh network structure as shown in the structure of FIG. 2 can be bonded to the outer surface of the silicon carbide layer (13). That is, as oxygen in the oxide layer is replaced with carbon, a silicon carbide layer is also formed at the interface between the oxide layer and the carbon nanotubes bonded to the oxide layer.
본 발명에서 카본블랙 코팅(S170) 단계를 통해 제1 판상 실리콘 응집체에 카본블랙층이 형성된 도 6 및 도 7과 같은 제2 판상 실리콘 응집체를 실리콘 음극재로서 제공할 수 있다. 구체적으로 카본블랙 코팅(S170) 단계는 실리콘 카바이드(13)층 및 복수의 탄소나노튜브(14)를 코팅하는 카본블랙층(15)이 형성된 제2 판상 실리콘 복합체 및 이들의 응집체인 제2 판상 실리콘 응집체 제조 단계를 포함할 수 있다. 실리콘카바이드층이 형성된 판상 실리콘 복합체에서 탄소나노튜브는 실리콘카바이드층 표면에 결합된 상태가 되고 탄소나노튜브와 탄소나노튜브가 결합되지 않은 실리콘카바이드층 표면은 외부로 노출되게 되는데, 노출된 실리콘카바이드층 표면과 탄소나노튜브를 카본블랙으로 코팅하게 된다. 제2 판상 실리콘 복합체는 제1 판상 실리콘 복합체에 실리콘카바이드층을 형성한 후 카본블랙층까지 형성된 복합체로서 이들이 응집되고 결합된 상태가 제2 판상 실리콘 응집체가 될 수 있다.In the present invention, a second plate-shaped silicon aggregate, such as FIGS. 6 and 7, in which a carbon black layer is formed on a first plate-shaped silicon aggregate through a carbon black coating (S170) step, can be provided as a silicon anode material. Specifically, the carbon black coating (S170) step can include a step of manufacturing a second plate-shaped silicon composite, in which a silicon carbide (13) layer and a carbon black layer (15) coating a plurality of carbon nanotubes (14) are formed, and a second plate-shaped silicon aggregate which is an aggregate thereof. In the plate-shaped silicon composite in which the silicon carbide layer is formed, the carbon nanotubes are bonded to the surface of the silicon carbide layer, and the surface of the silicon carbide layer where the carbon nanotubes and the carbon nanotubes are not bonded is exposed to the outside, and the exposed surface of the silicon carbide layer and the carbon nanotubes are coated with carbon black. The second plate-shaped silicon composite is a composite in which a silicon carbide layer is formed on the first plate-shaped silicon composite and then a carbon black layer is formed, and a state in which these are bonded and bonded can become a second plate-shaped silicon aggregate.
본 발명에서 카본블랙 코팅(S170) 단계는 실리콘카바이드층 형성(S160)과 하나의 단계로 동시에 수행하여 실리콘카바이드층 및 카본블랙층이 연속적으로 형성되게 수행하거나, 카본블랙 코팅(S170) 단계를 실리콘카바이드층 형성(S160) 단계와 구분하여 수행할 수도 있다. In the present invention, the carbon black coating (S170) step may be performed simultaneously with the silicon carbide layer formation (S160) as a single step so that the silicon carbide layer and the carbon black layer are formed continuously, or the carbon black coating (S170) step may be performed separately from the silicon carbide layer formation (S160) step.
본 발명의 일 실시예에 따르면, 카본블랙층 형성을 실리콘카바이드층 형성과 하나의 단계로 동시에 수행하는 방법은 한 번의 가열 공정에서 실리콘카바이드층 및 카본블랙층을 연속으로 형성하는 방법으로서, 실리콘카바이드층 형성을 위해 제1 판상 실리콘 복합체를 가열된 킬른에 통과시킬 때, 카본블랙층 형성이 가능한 탄화수소 가스를 공급하는 방법일 수 있다.According to one embodiment of the present invention, a method of simultaneously forming a carbon black layer and forming a silicon carbide layer in one step may be a method of continuously forming a silicon carbide layer and a carbon black layer in one heating process, wherein when a first plate-shaped silicon composite is passed through a heated kiln for forming a silicon carbide layer, a hydrocarbon gas capable of forming a carbon black layer is supplied.
본 발명의 다른 일 실시예에 따르면, 카본블랙층 형성 단계를 실리콘카바이드층 형성 단계와 분리하는 경우, 제1 판상 실리콘 복합체에 실리콘카바이드층 형성을 완료한 후 로타리킬른 또는 킬른에 실리콘카바이드층이 형성된 복합체를 투입하고 탄화수소 가스, 액화천연 가스 및 액화석유 가스 중 하나를 선택하여 공급하면서 750 내지 1000℃에서 열분해 시켜 카본블랙층을 형성할 수 있다.According to another embodiment of the present invention, when the carbon black layer forming step is separated from the silicon carbide layer forming step, after the silicon carbide layer formation is completed on the first plate-shaped silicon composite, the composite on which the silicon carbide layer has been formed is put into a rotary kiln or a kiln, and one of a hydrocarbon gas, a liquefied natural gas, and a liquefied petroleum gas is selectively supplied while thermally decomposing at 750 to 1000°C, thereby forming a carbon black layer.
본 발명의 실시예들에 따르면, 실리콘카바이드층 형성을 먼저 해주고 카본블랙층 형성을 다음에 해주는 경우, 탄화수소 가스의 분해율을 높일 수 있어서 동일한 카본블랙층 형성에 사용하는 탄화수소 가스를 절약할 수 있으며, 실리콘카이드층 형성과 카본블랙층 형성을 동시에 하는 경우는 폴리머 분해로 발생한 탄화수소 가스가 수소와 산소 비율이 높아서 카본블랙층 형성용 탄화수소 분해율이 다소 저하될 수 있으나, 복수의 공정을 하나로 통합하고 본 발명에서 목적하는 실리콘 음극재를 신속하게 제조할 수 있는 측면에서 실리콘카바이드층 형성 단계와 카본블랙층 형성 단계는 하나의 단계에서 동시에 수행하는 것이 바람직할 수 있다.According to embodiments of the present invention, when the silicon carbide layer is formed first and the carbon black layer is formed later, the decomposition rate of the hydrocarbon gas can be increased, so that the hydrocarbon gas used for forming the same carbon black layer can be saved. In addition, when the silicon carbide layer and the carbon black layer are formed simultaneously, the hydrocarbon gas generated by the polymer decomposition has a high ratio of hydrogen and oxygen, so that the hydrocarbon decomposition rate for forming the carbon black layer can be somewhat reduced. However, in terms of integrating a plurality of processes into one and rapidly manufacturing the silicon anode material targeted by the present invention, it may be preferable to perform the silicon carbide layer forming step and the carbon black layer forming step simultaneously in one step.
본 발명에 따른 카본블랙층 형성을 위해 공급하는 탄화수소 가스는 C2H2(아세틸린), C2H6(에탄), C2H4(에틸렌), CH4(메탄), C3H8(프로판), C4H10(부탄), C3H6(프로필렌) 및 C4H8(부틸렌)로 이루어진 군에서 선택되는 하나 이상일 수 있고, 탄화수소 가스는 에탄올, 메탄올, 톨루엔 등과 같은 C, H, O로 이루어진 탄화수소 용액을 기화시켜 사용할 수도 있다. 탄화수소 가스 공급은 0.05 내지 1.0M/분, 바람직하게는 0.05 내지 0.5M/분일 수 있다.The hydrocarbon gas supplied for forming the carbon black layer according to the present invention may be at least one selected from the group consisting of C 2 H 2 (acetylene), C 2 H 6 (ethane), C 2 H 4 (ethylene), CH 4 (methane), C 3 H 8 (propane), C 4 H 10 (butane), C 3 H 6 (propylene), and C 4 H 8 (butylene), and the hydrocarbon gas may also be used by vaporizing a hydrocarbon solution composed of C, H, and O, such as ethanol, methanol, and toluene. The hydrocarbon gas supply may be 0.05 to 1.0 M/min, preferably 0.05 to 0.5 M/min.
본 발명의 실리콘 음극재 제조방법은 카본블랙 코팅(S170) 단계 이후 본 발명에서 목적하는 실리콘 음극재인 판상 실리콘 응집체와 흑연을 혼합하는 단계를 더 포함할 수 있다. 흑연 입자는 10 내지 30㎛ 바람직하게는 12 내지 26㎛일 수 있고 본 발명의 실리콘 음극재는 흑연 입자와 종횡비가 유사할 수 있어 흑연의 혼합에 의한 전지 성능 효과를 보다 향상시킬 수 있다.The method for manufacturing a silicon anode material of the present invention may further include a step of mixing the silicon anode material targeted in the present invention, which is a plate-shaped silicon aggregate, with graphite after the carbon black coating (S170) step. The graphite particles may have a size of 10 to 30 ㎛, preferably 12 to 26 ㎛, and the silicon anode material of the present invention may have an aspect ratio similar to that of the graphite particles, so that the battery performance effect due to mixing of graphite may be further improved.
나아가 본 발명의 리튬이온이차전지용 실리콘 음극재는 리튬이차전지의 음극 및 이를 포함하는 리튬이차전지 제조에 사용할 수 있다.Furthermore, the silicon negative electrode material for a lithium ion secondary battery of the present invention can be used in the manufacture of a negative electrode of a lithium secondary battery and a lithium secondary battery including the same.
이상에서 설명한 본 발명의 리튬이온이차전지용 실리콘 음극재는 폐실리콘 커프(Silicon kerf)로부터 얻은 판상 실리콘 입자에 실리콘 산화층, 탄소나노튜브 및 탄소 함유층을 포함하는 다층 구조의 유기적인 형상을 포함하여 흑연과 복합화 시 충진율이 우수하고 동일 부피 기준 더 많은 리튬을 충전할 수 있으며, 폐실리콘 커프를 사용하여 경제성도 뛰어나다.The silicon anode material for a lithium ion secondary battery of the present invention described above includes an organic shape of a multilayer structure including a silicon oxide layer, a carbon nanotube, and a carbon-containing layer in plate-like silicon particles obtained from waste silicon kerf, and when composited with graphite, has an excellent filling rate and can charge more lithium based on the same volume, and is also economical because it uses waste silicon kerf.
본 발명의 일 실시예에 따르면, 본 발명의 리튬이온이차전지용 실리콘 음극재를 포함하는 리튬이온이차전지에서 초기 방전용량이 500mAh/g 이상이고, 100 사이클에서 잔류용량(방전용량)이 89% 이상으로 430 내지 470mAh/g일 수 있다.According to one embodiment of the present invention, a lithium ion secondary battery including the silicon negative electrode material for a lithium ion secondary battery of the present invention may have an initial discharge capacity of 500 mAh/g or more, and a residual capacity (discharge capacity) at 100 cycles of 89% or more, or 430 to 470 mAh/g.
이하, 본 발명을 보다 구체적인 실시예 및 비교예를 통해 설명한다. 아래 실시예는 본 발명의 이해를 돕기 위한 것일 뿐이며, 본 발명의 범위가 아래 실시예에 의해 한정되는 것은 아니다.Hereinafter, the present invention will be described through more specific examples and comparative examples. The examples below are only intended to help understanding the present invention, and the scope of the present invention is not limited by the examples below.
실시예에서 별도 정의되지 않는 부분은 본 발명이 속하는 통상의 기술자가 일반적으로 이해하는 의미, 규격, 수치, 분석 또는 측정방법(KS, JIS, ISO, ASTM 등)에 따라 해석할 수 있고 실시예에서 별도의 분석방법을 기재하지 않은 경우 공지의 분석방법을 활용할 수 있음은 물론이다.Any part not specifically defined in the embodiments may be interpreted according to the meaning, standard, value, analysis or measurement method (KS, JIS, ISO, ASTM, etc.) generally understood by a person skilled in the art to which the present invention pertains, and if no separate analysis method is described in the embodiments, it goes without saying that a known analysis method may be utilized.
[제조예 1][Manufacturing Example 1]
탄소나노튜브를 포함하는 실리콘 음극재의 제조Manufacturing of silicon anode material containing carbon nanotubes
다결정 실리콘 잉곳을 직경 50㎛ 다이아몬드 와이오쏘로 물과 디에틸렌글리콜 혼합액으로 냉각, 윤활 및 절단과정을 거쳐 판상 실리콘 5% 혼합용액 5,000㎖을 회수하였다. 혼합용액을 스프레이 드라이어에서 15,000rpm으로 회전하는 아토마이저 원판에 분당 20㎖ 속도로 주입하고 180℃에서 건조하여 판상 실리콘 입자를 얻었다. A polycrystalline silicon ingot was cooled, lubricated, and cut with a 50 ㎛ diameter diamond wio saw using a mixture of water and diethylene glycol to recover 5,000 ㎖ of a 5% plate-shaped silicon mixture solution. The mixture solution was injected into an atomizer plate rotating at 15,000 rpm in a spray dryer at a rate of 20 ㎖ per minute and dried at 180°C to obtain plate-shaped silicon particles.
판상 실리콘 입자를 반경 120㎜, 3400rpm 핀밀에서 공기와 함께 분쇄하여 저밀도의 판상 실리콘 입자를 만들었다. Low-density plate-shaped silicon particles were produced by pulverizing plate-shaped silicon particles with air in a pin mill with a radius of 120 mm and 3400 rpm.
저밀도의 판상 실리콘 입자를 로타리킬른 800℃에서 10분간 체류시키면서, 질소로 과산화수소를 버블링하고 주입하여 산화시키는 것으로 실리콘 산화층을 형성하였다.A silicon oxide layer was formed by oxidizing low-density plate-shaped silicon particles by bubbling and injecting hydrogen peroxide with nitrogen while keeping them in a rotary kiln at 800°C for 10 minutes.
평균 직경 10㎚, 평균 길이 150㎛의 탄소나노튜브(JENOTUBE 10B) 25g, 폴리비닐피놀리돈 50g, 증류수 4925g로 섞고, 고압균질기를 사용하여 탄소나노튜브 분산액을 만들었다. 탄소나노튜브 분산액 5,000g에 산화층이 형성된 실리콘음극재 500g을 넣고 고압균질기로 추가 분산하여 혼합 분산액을 제조하였다.25 g of carbon nanotubes (JENOTUBE 10B) with an average diameter of 10 nm and an average length of 150 μm, 50 g of polyvinylpyrrolidone, and 4925 g of distilled water were mixed and a carbon nanotube dispersion was prepared using a high-pressure homogenizer. 500 g of a silicon anode material having an oxide layer formed was added to 5,000 g of the carbon nanotube dispersion and further dispersed using a high-pressure homogenizer to prepare a mixed dispersion.
혼합 분산액을 스프레이 드라이어에서 18,000rpm으로 회전하는 아토마이저 원판에 분당 30㎖ 속도로 주입하여 200℃에서 건조하여 구형 또는 그래뉼(granule) 형상으로 뭉쳐진 제1 판상 실리콘 응집체를 얻었다(도 3, 4 및 5). The mixed dispersion was injected at a rate of 30 ml per minute into an atomizer plate rotating at 18,000 rpm in a spray dryer and dried at 200°C to obtain first plate-shaped silicon aggregates agglomerated in a spherical or granule shape (Figs. 3, 4, and 5).
이후 탄화 단계로 제1 판상 실리콘 응집체를 950℃의 질소분위기 로타리킬른에서 5분 체류시켜 폴리머 바인더인 폴리비닐피놀리돈이 분해되면서 실리콘 산화층에 실리콘카바이드층이 형성되게 하였다. 실리콘카바이드층 형성 후 연속으로 카본블랙층을 형성하기 위해 이어서 탄화수소 가스를 공급하였다. 구체적으로 950℃ 로타리킬른에서 20분간 체류시키면서 메탄 가스를 0.1M/min의 속도로 투입하여 실리콘카바이드층 및 탄소나노튜브를 코팅하도록 카본블랙층을 추가로 형성하여 최종 실리콘 음극재인 제2 판상 실리콘 응집체를 수득하였고 실리콘카바이드층 형성에 따라 실리콘카바이드층 표면에 탄소나노튜브가 결합된 상태를 확인하였다(도 6 및 7).Thereafter, in the carbonization step, the first plate-shaped silicon aggregate was kept in a nitrogen atmosphere rotary kiln at 950°C for 5 minutes to decompose the polymer binder, polyvinylpyrrolidone, and form a silicon carbide layer on the silicon oxide layer. After the silicon carbide layer was formed, hydrocarbon gas was then supplied to continuously form a carbon black layer. Specifically, while keeping it in the rotary kiln at 950°C for 20 minutes, methane gas was supplied at a rate of 0.1 M/min to additionally form a carbon black layer to coat the silicon carbide layer and carbon nanotubes, thereby obtaining the second plate-shaped silicon aggregate, which is the final silicon anode material. It was confirmed that carbon nanotubes were bonded to the surface of the silicon carbide layer as the silicon carbide layer was formed (Figs. 6 and 7).
이상의 방법에 따라 제조한 실리콘 음극재(제2 판상 실리콘 응집체) 9.5질량%, 평균 직경 15㎛의 인조흑연 85.5질량%, 바인더 4.2질량% 및 도전재 0.8질량%를 혼합하여 실리콘 음극재 페이스트를 만들고 구리 호일에 도포하고 건조하여 원형으로 타공하여 음극을 제조하였다. By mixing 9.5 mass% of the silicon anode material (second plate-shaped silicon aggregate) manufactured by the above method, 85.5 mass% of artificial graphite having an average diameter of 15 ㎛, 4.2 mass% of a binder, and 0.8 mass% of a conductive material, a silicon anode paste was manufactured, which was applied to copper foil, dried, and then punched into a circular shape to manufacture a cathode.
[제조예 2][Manufacturing Example 2]
탄소나노튜브를 포함하지 않는 실리콘 음극재의 제조Manufacturing of silicon anode materials without carbon nanotubes
제조예 1과 동일한 방법으로 실리콘 산화층을 형성하였다.A silicon oxide layer was formed using the same method as in Manufacturing Example 1.
이후 탄소나노튜브 대신 카복시메틸셀룰로스(carboxymethyl cellulose) 25g을 혼합한 100cps 점도의 증류수 5,000g에 산화층 형성 실리콘음극재 500g을 넣고 고압균질기로 분산하여 분산액을 제조하였다.Afterwards, 500 g of silicon anode material forming an oxide layer was added to 5,000 g of distilled water with a viscosity of 100 cps mixed with 25 g of carboxymethyl cellulose instead of carbon nanotubes, and dispersed using a high-pressure homogenizer to produce a dispersion.
분산액을 스프레이 드라이어에서 18,000rpm으로 회전하는 아토마이저 원판에 분당 30㎖ 속도로 주입하여 200℃에서 건조하여 구형 또는 그래뉼(granule) 형상으로 뭉쳐진 실리콘 응집체를 얻었다.The dispersion was injected at a rate of 30 ml per minute onto an atomizer plate rotating at 18,000 rpm in a spray dryer and dried at 200°C to obtain silicon aggregates in the shape of spheres or granules.
이후 실리콘 응집체를 950℃ 로타리킬른에서 20분간 체류시키면서 메탄 가스를 0.1M/min. 속도로 투입하여 카본블랙층을 형성하여 실리콘 음극재를 수득하였다.Afterwards, the silicon agglomerate was kept in a 950℃ rotary kiln for 20 minutes, and methane gas was injected at a rate of 0.1 M/min. to form a carbon black layer, thereby obtaining a silicon anode material.
이상의 방법에 따라 제조한 실리콘 음극재 9.5질량%, 평균직경 15㎛의 인조흑연 85.5질량%, 바인더 4.2질량% 및 도전재 0.8질량%를 혼합하여 실리콘 음극재 페이스트를 만들고 구리 호일에 도포하고 건조하여 원형으로 타공하여 음극을 제조하였다.By mixing 9.5 mass% of the silicon anode material manufactured by the above method, 85.5 mass% of artificial graphite having an average diameter of 15 ㎛, 4.2 mass% of binder, and 0.8 mass% of conductive material, a silicon anode paste was made, which was then applied to copper foil, dried, and punched into a circular shape to manufacture a cathode.
[실시예 1][Example 1]
제조예 1에 따라 준비한 음극, 리튬 호일을 코인 모양으로 타공한 양극 및 세퍼레이터를 조립하고 전해액을 넣어 충방전 성능 측정을 위한 리튬이온전지 반전지(half-cell)을 제작하였다. 충방전 성능 측정에서 용량은 25℃에서 충방전전류량 1C 조건하에서 측정하였고, 수명은 25℃에서 충방전전류량 1C 조건하에서 100사이클까지 측정하였다.The negative electrode prepared according to Manufacturing Example 1, the positive electrode made by punching lithium foil into a coin shape, and the separator were assembled and an electrolyte was added to produce a lithium ion battery half-cell for measuring charge and discharge performance. In measuring charge and discharge performance, the capacity was measured under the condition of 1C of charge and discharge current at 25°C, and the life was measured up to 100 cycles under the condition of 1C of charge and discharge current at 25°C.
측정 결과, 첫사이클 시험에서 504.1mAh/g의 방전용량이 나타났고 사이클을 반복하는 동안 낮은 용량 감소가 확인되었으며, 100사이클에서는 89.0%인 448.6mAh/g의 잔류용량이 확인되었다.The measurement results showed a discharge capacity of 504.1 mAh/g in the first cycle test, a low capacity decrease was confirmed during repeated cycles, and a residual capacity of 448.6 mAh/g, or 89.0%, was confirmed at 100 cycles.
[비교예 1][Comparative Example 1]
제조예 2에 따라 준비한 음극을 사용한 것 외에는 실시예 1과 동일하게 반전지를 제작하고 충방전 성능을 측정하였다.A half-cell was manufactured in the same manner as in Example 1, except that the cathode prepared in Manufacturing Example 2 was used, and charge/discharge performance was measured.
측정 결과, 첫사이클 시험에서 510.2mAh/g의 방전용량이 나타났고 초기 비가역 용량이 92.2%로 확인되었으며, 사이클이 진행될수록 지속적인 용량 감소를 보이다가 100사이클에서는 83.6%인 426.5mAh/g의 잔류용량이 확인되었다.The measurement results showed a discharge capacity of 510.2 mAh/g in the first cycle test and an initial irreversible capacity of 92.2%. As the cycle progressed, a continuous decrease in capacity was observed, and at 100 cycles, a residual capacity of 426.5 mAh/g, or 83.6%, was confirmed.
[부호의 설명][Explanation of symbols]
10: 제2 판상 실리콘 복합체10: Second plate silicon composite
11: 판상 실리콘 입자11: Plate-shaped silicon particles
12: 실리콘 산화물층12: Silicon oxide layer
13: 실리콘카바이드층13: Silicon carbide layer
14: 탄소나노튜브14: Carbon nanotubes
15: 카본블랙층15: Carbon black layer
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| KR20220089413A (en) * | 2020-12-21 | 2022-06-28 | 주식회사 포스코 | Negative electrode active material for rechargeable lithium battery and manufacturing method thereof |
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| KR102454488B1 (en) * | 2022-04-27 | 2022-10-14 | 주식회사 이큐브머티리얼즈 | Method of preparing silicon anode material for lithium ion secondary battery to which boron oxide is applied |
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| KR20220089413A (en) * | 2020-12-21 | 2022-06-28 | 주식회사 포스코 | Negative electrode active material for rechargeable lithium battery and manufacturing method thereof |
| KR102452519B1 (en) * | 2022-04-27 | 2022-10-07 | 주식회사 이큐브머티리얼즈 | Silicon anode materials for lithium ion secondary battery |
| KR102454488B1 (en) * | 2022-04-27 | 2022-10-14 | 주식회사 이큐브머티리얼즈 | Method of preparing silicon anode material for lithium ion secondary battery to which boron oxide is applied |
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