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WO2025105067A1 - Réseau et procédé de fabrication d'un réseau - Google Patents

Réseau et procédé de fabrication d'un réseau Download PDF

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Publication number
WO2025105067A1
WO2025105067A1 PCT/JP2024/035230 JP2024035230W WO2025105067A1 WO 2025105067 A1 WO2025105067 A1 WO 2025105067A1 JP 2024035230 W JP2024035230 W JP 2024035230W WO 2025105067 A1 WO2025105067 A1 WO 2025105067A1
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Prior art keywords
grating
etching
manufacturing
less
lattice
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PCT/JP2024/035230
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English (en)
Japanese (ja)
Inventor
和也 山本
幸暢 西尾
哲哉 善光
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Nalux Co Ltd
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Nalux Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/02—Viewing or reading apparatus
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings

Definitions

  • the present invention relates to a lattice and a method for manufacturing a lattice.
  • Augmented reality technology is a technology that provides a synthesized image by overlaying a computer-generated image on a user's field of view of the real world using devices such as glasses or a head-mounted display.
  • a method has been developed that uses a diffraction grating to control the direction of light rays and transmit the image (for example, Patent Documents 1 and 2).
  • Patent Documents 1 and 2 In order to improve the light utilization efficiency of devices that use a diffraction grating, it is necessary to improve the diffraction efficiency of the diffraction grating. Therefore, there is a need for a grating with high diffraction efficiency and easy manufacturing, and a manufacturing method thereof.
  • the technical objective of the present invention is to provide a grating with high diffraction efficiency and easy manufacturing, and a manufacturing method thereof.
  • the grating of the first embodiment of the present invention is composed of a plurality of linear ridges of a second material arranged with a period p in a first direction on a plane of a member of a first material.
  • p is 0.3 micrometers or more and 1 micrometer or less
  • the shape of each ridge is a trapezoid with a line segment corresponding to the plane as the lower base
  • the height d of the trapezoid is 0.83 x p or less
  • the sides of the trapezoid other than the lower base and upper base are the first side and the second side
  • the interior angle ⁇ between the first side and the lower base is 60 degrees or less
  • the interior angle ⁇ between the second side and the lower base is 75 degrees or more
  • the length of the upper base is w1
  • the difference between p and the length of the lower base is w2
  • the ratio of w1 to (w1 + w2) is 0.20 to 0.80.
  • the grating of this embodiment has high diffraction efficiency when used as a diffraction grating and is easy to manufacture.
  • the corner R of the vertex of the interior angle formed by the first side and the upper base, or the corner R of the vertex of the supplementary angle of the interior angle formed by the first side and the lower base is 20 nanometers or less.
  • the grating of this embodiment has even higher diffraction efficiency when used as a diffraction grating.
  • the method for manufacturing a grating according to the second aspect of the present invention is a method for manufacturing a grating comprising a plurality of linear ridges of a second material, each having a height of d, arranged with a period p in a first direction on a plane of a member of a first material, and in a cross section perpendicular to the plane and the first direction, the shape of each ridge is a trapezoid with a line segment corresponding to the plane as its base.
  • p is 0.3 micrometers to 1 micrometer
  • the height d of the trapezoid is 0.83 ⁇ p or less.
  • a layer of the second material having a thickness of d is formed on the plane of the member of the first material, a film of resist is formed on the layer of the second material, the film of resist is patterned so that the cross section perpendicular to the plane has a blazed shape with a period p, and the second material is etched.
  • the first and second materials are selected such that the etching rate of the first material is 10% or less of the etching rate of the second material under the etching conditions of the second material.
  • the manufacturing method of this embodiment by selecting the first and second materials such that the etching rate of the first material under the etching conditions of the second material is 10 percent or less of the etching rate of the second material, the cross-sectional shape of the ridges and the spacing between the ridges can be easily changed without changing the period p and the height of the ridges.
  • the diffraction efficiency can be improved by reducing the corner R of the apex of the trapezoidal corner of the cross section of the ridges.
  • the length of the upper base of the trapezoid is w1
  • the difference between p and the length of the lower base is w2
  • the ratio of w1 to (w1+w2) is adjusted without changing the period p and thickness d.
  • the blaze angle of the trapezoid remains constant after etching is completed, even if the etching time is changed. Therefore, it is easy to obtain the desired trapezoid shape.
  • the sides of the trapezoid other than the upper and lower bases are defined as the first and second sides, the interior angle ⁇ between the first side and the lower base is 60 degrees or less, the interior angle ⁇ between the second side and the lower base is 75 degrees or more, the length of the upper base is w1, the difference between p and the length of the lower base is w2, and the ratio of w1 to (w1+w2) is 0.20 or more and 0.80 or less.
  • the corner R of the vertex of the interior angle formed by the first side and the upper base, or the corner R of the vertex of the supplementary angle of the interior angle formed by the first side and the lower base is 20 nanometers or less.
  • the combination of the first material and the second material is any one of chromium (Cr) or nickel (Ni) and silicon (Si), chromium (Cr), nickel (Ni) or silicon dioxide (SiO2) and silicon carbide (SiC), chromium (Cr) or nickel (Ni) and aluminum oxide (Al2O3), chromium (Cr), nickel (Ni) or chromium (Cr), nickel (Ni) or glass with a silicon dioxide content of less than 50 percent and silicon dioxide (SiO2).
  • the smaller of the two interior angles formed by the base and the other two sides of the triangle of the blazed shape of the resist in the cross section is defined as ⁇ '
  • the ratio of the etching rate of the second layer to the etching rate of the resist is defined as ⁇
  • the plane is divided into a plurality of regions, and the patterning or etching conditions are changed so as to change the ratio of w1 to (w1+w2) in each region.
  • the shape of a grating formed on a flat surface by the grating manufacturing method of the second aspect is transferred to a flexible material by electroforming, and the flexible material is attached to the curved surface to form a grating on the curved surface.
  • a grating with high diffraction efficiency can be easily manufactured on a curved surface such as a spectacle lens.
  • FIG. 1 is a diagram showing the cross-sectional shape of an asymmetric trapezoidal lattice.
  • FIG. 13 is a diagram showing the relationship between wavelength and first-order diffraction efficiency for each type of grating.
  • FIG. 1 is a diagram illustrating parameters of an asymmetric trapezoidal lattice.
  • FIG. 13 is a diagram showing the relationship between depth d and normalized average efficiency.
  • FIG. 13 is a diagram showing the relationship between corner R and normalized average efficiency.
  • FIG. 13 is a diagram showing the relationship between the duty ratio and normalized average efficiency of an asymmetric trapezoidal grating.
  • 1 is a flow chart illustrating a method for manufacturing an asymmetric trapezoidal lattice.
  • FIG. 2 shows a first layer M1.
  • FIG. 2 shows a first layer M1 and a second layer M2 formed thereon.
  • 13 is a diagram showing a state in which a resist film M3 is formed on a second layer M2.
  • FIG. 13 is a diagram showing a state in which the resist film on the second layer is patterned into a blazed shape.
  • FIG. FIG. 13 shows the state after etching has been performed.
  • FIG. 13 is a diagram showing the state after the resist has been removed.
  • FIG. 6D this is a diagram showing a state in which the resist film M3 on the second layer M2 is patterned into a blazed shape.
  • FIG. 1 shows the state after a relatively short etching time.
  • FIG. 7C shows the state after a longer etching time than in FIG. 7B.
  • FIG. 7D shows the state after etching for an even longer time than in FIG. 7C.
  • FIG. 2 shows a layer M2 of grating material.
  • 13 is a diagram showing a state in which a resist film M3 is formed on a layer M2 of a grating material.
  • FIG. FIG. 13 shows a state in which a resist film M3 on a layer M2 of grating material has been patterned into a blazed shape.
  • FIG. 1 shows the state after a relatively short etching time.
  • FIG. 7C shows the state after a longer etching time than in FIG. 7B.
  • FIG. 7D shows the state after etching for
  • FIG. 13 shows the state after etching has been performed.
  • FIG. 13 is a diagram showing the state after the resist has been removed.
  • 1 is a diagram showing a state in which a resist film M3 is formed on a layer M2 that is susceptible to etching and is formed on a layer M1 that is not susceptible to etching.
  • FIG. 13 shows a binary grating formed by etching.
  • FIG. 13 shows the state after further etching has been performed.
  • 1 is a diagram showing a state in which a resist film M3 is formed on a layer M2 that is susceptible to etching and is formed on a layer M1 that is not susceptible to etching.
  • FIG. 13 shows a state in which a slanted grating is formed by etching.
  • FIG. 13 shows the state after further etching has been performed.
  • 1 is an image showing the cross-sectional shape of the resist after patterning and the cross-sectional shape of the second layer after etching.
  • 1A is an image showing the cross-sectional shape after etching according to a manufacturing method of the present invention using an etching-resistant layer
  • FIG. 1B is an image showing the cross-sectional shape after etching according to a manufacturing method of the present invention that does not use an etching-resistant layer.
  • 13 is an image showing the cross-sectional shape after etching when the etching time is 120 seconds and 130 seconds.
  • 1 is an image of a cross section of a mold with an asymmetric trapezoidal lattice produced by the lattice production method of the present invention.
  • FIG. 2 shows a single grating formed on one surface.
  • FIG. 13 is a diagram showing a plurality of gratings with different duty ratios formed in a plurality of regions on one surface. 13 is an image showing the cross-sectional shape after etching when the etching time is 85 seconds, 75 seconds, and 67 seconds. 6D and a cross-sectional shape of a grating corresponding to FIG. 6F when the duty ratios are 0.58, 0.46, and 0.39.
  • FIG. 6 shows a grating 200 formed on a substrate 110 by the method shown in FIG. 5.
  • 1 is a diagram showing a state in which a film 300 made of ultraviolet curing resin or thermosetting resin with an adhesive sheet 400 attached thereto is pressed onto a lattice 200.
  • FIG. 2 shows the film 300 with the adhesive sheet 400 attached, removed from the lattice 200.
  • 1 is a diagram showing a state in which a film 300 with an adhesive sheet 400 attached thereto is attached onto a curved surface of a substrate 120.
  • 1 is a diagram showing a state in which a nickel film 500 having a lattice pattern 200′′ is attached onto the curved surface of a matrix 130.
  • FIG. FIG. 6 shows a grating 200 formed on a substrate 110 by the method shown in FIG. 5.
  • FIG. 13 is a diagram showing a state in which a film 300 made of ultraviolet curing resin or thermosetting resin with a glass film 450 attached thereto is pressed onto a lattice 200.
  • FIG. FIG. 3 shows the film 300 with the glass membrane 450 attached removed from the grid 200.
  • 1 is a diagram showing a state in which a nickel film 550 having a lattice pattern 200′′ is attached onto the curved surface of a matrix 130.
  • FIG. 1 is a diagram for explaining how to determine the blaze angle ⁇ and taper angle ⁇ of an actual grating cross section.
  • FIGS. 1A-1D are diagrams showing the cross-sectional shapes of each type of diffraction grating.
  • the cross sections shown in FIG. 1A-1D are cross sections perpendicular to the above-mentioned plane and the above-mentioned direction.
  • Figure 1A shows the cross-sectional shape of a binary grating.
  • the ridges of the binary grating are rectangular, and one side of the rectangle coincides with the straight line that corresponds to the plane above.
  • Figure 1B shows the cross-sectional shape of a blazed grating.
  • the ridges of the blazed grating are triangular, with one side of the triangle coinciding with a straight line that corresponds to the plane.
  • Figure 1C shows the cross-sectional shape of a slanted grating.
  • the ridges of the slanted grating are parallelograms, and one side of the parallelogram coincides with a straight line that corresponds to the plane.
  • Figure 1D shows the cross-sectional shape of an asymmetric trapezoidal lattice.
  • the ridges of the asymmetric trapezoidal lattice are asymmetric trapezoids, and the bottom base of the trapezoid coincides with a straight line that corresponds to a plane.
  • the period p of the ridges is also called the lattice period or lattice pitch.
  • the angle ⁇ is called the blaze angle.
  • the acute angle formed by the above plane and the two sides of the slanted lattice is ⁇ .
  • Each ⁇ is called an inclination angle.
  • each type of grating is determined to maximize efficiency for a wavelength of 530 nanometers.
  • the groove depth of the slanted grating is set to the same as that of the asymmetric trapezoidal grating, taking into account the difficulty of manufacturing.
  • the diffraction efficiency of the asymmetric trapezoidal grating and the blazed grating is relatively high, and the efficiency at a wavelength of 530 nanometers is more than twice that of the binary grating.
  • the inventors focused on and investigated asymmetric trapezoidal gratings, which have relatively high diffraction efficiency and a greater number of shape-related parameters than blazed gratings, giving greater design freedom.
  • Figure 3 is a diagram explaining the parameters of an asymmetric trapezoidal lattice. p, d, w1, w2, and ⁇ have already been explained. Angle ⁇ is the larger of the two interior angles formed by the lower base of the trapezoid and another side, and is also called the taper angle. In the simulation, taper angle ⁇ was set to 80 degrees. Corner R in Figure 3 is the radius of curvature of the vertex of the interior angle formed by the upper base and the side that forms a blaze angle with the lower base. A trapezoid is asymmetric if angles ⁇ and ⁇ are different.
  • Figures 4A-4C show the relationship between each of the three parameters and the normalized average efficiency.
  • Figure 4A shows the relationship between depth d and normalized average efficiency when only depth d is changed without changing other parameters.
  • the horizontal axis of Figure 4A shows depth d.
  • the unit of depth is nanometers.
  • the vertical axis of Figure 4A shows normalized average efficiency.
  • the normalized average efficiency has a maximum value of 1 when depth d is 100 nanometers.
  • FIG. 4B shows the relationship between corner R and normalized average efficiency when only corner R is changed without changing other parameters.
  • the horizontal axis of FIG. 4B shows corner R.
  • the unit of corner R is nanometers.
  • the vertical axis of FIG. 4B shows normalized average efficiency.
  • the normalized average efficiency has a maximum value of 1 when corner R is 0.
  • Figure 4C shows the relationship between the duty ratio and normalized average efficiency of an asymmetric trapezoidal grating when only the duty ratio is changed without changing other parameters.
  • the duty ratio of an asymmetric trapezoidal grating is the ratio between w1 and (w1 + w2).
  • the horizontal axis of Figure 4C shows the duty ratio.
  • the vertical axis of Figure 4C shows the normalized average efficiency.
  • the normalized average efficiency has a maximum value of 1 when the duty ratio is 0.5.
  • the average efficiency drops significantly. Therefore, it is important to maintain the depth d and duty ratio at the target values.
  • the duty ratio if it is smaller than the target value of 0.5, the drop in average efficiency is large.
  • the average efficiency drops as the corner R increases, and drops sharply in particular in the range of 50 nanometers or more. Therefore, it is preferable to make the corner R as small as possible.
  • Table 2 shows the range of parameters of an asymmetric trapezoidal grating as a diffraction grating. The method for measuring the blaze angle ⁇ and taper angle ⁇ of an actual grating will be described later.
  • Figure 5 is a flow chart explaining the manufacturing method of an asymmetric trapezoidal lattice.
  • FIGS. 6A-6F are diagrams showing the steps of a method for manufacturing an asymmetric trapezoidal lattice.
  • the cross sections shown in FIG. 6A-6F are cross sections perpendicular to the plane in which the ridges are arranged and the direction in which the ridges extend, as in the case of FIG. 1A-1D.
  • step S1010 of FIG. 5 the design values of the parameters in Table 2 are determined.
  • step S1020 of FIG. 5 the materials for the first layer and the second layer are determined.
  • Table 3A shows combinations of materials for the first layer and the second layer when forming a grating on a mold substrate.
  • the mold on which the grating is formed can be used to manufacture a diffraction grating, for example, by injection molding.
  • "Cr,Ni" means that the material of the first layer is chromium (Cr) or nickel (Ni).
  • Table 3B shows combinations of materials for the first layer and the second layer when a diffraction grating is formed on a substrate without using a mold.
  • the second layer is a layer that undergoes etching as described below
  • the first layer is a layer that is not susceptible to etching under the etching conditions of the second layer.
  • the material of the first layer is selected such that the etching rate under the etching conditions of the second layer is 10 percent or less than the etching rate of the material of the second layer.
  • step S1030 of FIG. 5 a second layer is formed on the first layer.
  • FIG. 6A shows the first layer M1.
  • the material of the first layer is chromium.
  • FIG. 6B shows the first layer M1 and the second layer M2 formed thereon.
  • the material of the second layer is silicon.
  • the thickness of the second layer M2 is d in Table 2.
  • step S1040 of FIG. 5 the material, film thickness, and exposure dose of the resist film to be formed on the second layer are determined from the angle ⁇ in Table 2. How to determine the resist film thickness will be explained later.
  • a resist film is formed on the second layer and the resist film is patterned into a blazed shape by an electronic drawing device.
  • the resist film may also be patterned into a blazed shape by other means, such as laser drawing.
  • FIG. 6C shows the state in which a resist film M3 with a thickness d' is formed on a second layer M2 with a thickness d.
  • FIG. 6D shows the state in which the resist film on the second layer is patterned into a blazed shape.
  • the period (pitch) of the blazed shape corresponds to p in Table 2.
  • step S1060 of FIG. 5 it is determined whether the blazed shape is acceptable. If it is acceptable, proceed to step S1070. If it is not acceptable, return to step 1040.
  • step S1070 of FIG. 5 the etching conditions are determined from the depth d and duty ratio in Table 2. The relationship between the duty ratio and the etching time will be explained later.
  • step S1080 of FIG. 5 etching is performed. The etching is performed on the second layer, but the first layer is not susceptible to etching.
  • Figure 6E shows the state after etching has been performed.
  • the relationship between the blaze angle ⁇ ' of the patterned blazed shape shown in Figure 6D and the blaze angle ⁇ shown in Figure 6E is as follows:
  • the blaze angle ⁇ ' of the blazed shape is the smaller of the two interior angles formed by the base and the other two sides of the triangle of the ridge of the blazed shape in the cross section of Figure 6D.
  • the material of the resist is generally selected so that ⁇ is between 0.8 and 1.5.
  • the blaze angle ⁇ ' of the blazed shape can be determined from the following equation derived from the above equation.
  • tan ⁇ ' tan ⁇ / ⁇
  • step S1090 of FIG. 5 the remaining resist is removed.
  • FIG. 6F shows the state after the resist has been removed.
  • step S1100 of FIG. 5 it is determined whether the shape of the ridges of the lattice after etching is acceptable. If it is acceptable, the process ends. If it is not acceptable, the process returns to step 1070 and the etching conditions are changed.
  • Figures 7A to 7D are diagrams for explaining the relationship between the duty ratio and the etching time.
  • FIG. 7A shows the state in which the resist film M3 on the second layer M2 has been patterned into a blazed shape, similar to FIG. 6D.
  • Figure 7B shows the state after a relatively short etching time.
  • FIG. 7C shows the state after etching for a longer time than in FIG. 7B.
  • Figure 7D shows the state after etching for an even longer time than in Figure 7C.
  • the duty ratio decreases as the etching time increases.
  • d in Table 2 is determined by the thickness of the second layer
  • p in Table 2 is determined by the period of the blazed shape patterned on the resist film. Therefore, according to this method, the duty ratio can be controlled by the etching time without changing d and p in Table 2. Furthermore, ⁇ in Table 2 after etching is completed will be the same value regardless of the etching time.
  • Figures 8A-8E show the steps of a manufacturing method that does not use an etch-resistant layer.
  • Figure 8A shows layer M2 of the lattice material.
  • FIG. 8B shows the state in which a resist film M3 has been formed on the layer M2 of grating material.
  • FIG. 8C shows the state in which the resist film M3 on the layer M2 of grating material has been patterned into a blazed shape.
  • Figure 8D shows the state after etching has been performed.
  • Figure 8E shows the state after the resist has been removed.
  • Figures 9A-9C are diagrams illustrating a method for manufacturing a binary grating using a layer that is resistant to etching.
  • FIG. 9A shows a state in which a resist film M3 is formed on a layer M2 that is subject to etching, which is formed on a layer M1 that is resistant to etching.
  • Figure 9B shows the state in which a binary grating is formed by etching.
  • Figure 9C shows the state after further etching. Excessive etching distorts the shape of the ridges.
  • Figures 10A-10C are diagrams illustrating a method for manufacturing a slanted grating using a layer that is resistant to etching.
  • FIG. 10A shows a state in which a resist film M3 is formed on a layer M2 that is subject to etching, which is formed on a layer M1 that is resistant to etching.
  • FIG. 10B shows the state in which a slanted lattice is formed by etching.
  • FIG. 10C shows the state after further etching. Excessive etching distorts the shape of the ridges.
  • a mold with a grating is manufactured, and an optical element with a grating is manufactured by injection molding using the mold.
  • the size of the grating of the mold is slightly changed from the design value of the size of the grating parameters of the optical element, taking into account the shrinkage of the element after injection molding.
  • the material of the first layer is chromium, and the material of the second layer is silicon.
  • the thickness of the second layer which is the same as d in Table 2
  • the thickness of the second layer is 350 nanometers, 200 nanometers, and 100 nanometers.
  • Table 4 shows the etching conditions for the three examples. Etching is performed by placing the object in a sealed reactive etching chamber and applying a high-frequency voltage while gas is being supplied. The frequency of the high-frequency voltage is 13.56 MHz.
  • p in Table 2 is 420 micrometers. When d is 350, 200, and 100 nanometers, ⁇ in Table 2 is 60 degrees, 53 degrees, and 26 degrees, respectively.
  • FIG. 11 is an image showing the cross-sectional shape of the resist after patterning and the cross-sectional shape of the second layer after etching.
  • the cross-sections shown in FIG. 11 and the images in the following figures are cross-sections perpendicular to the plane in which the ridges are arranged and the direction in which the ridges extend, as in the case of FIG. 1A-FIG. 1D.
  • the image of the cross-sectional shape of the resist after patterning corresponds to FIG. 6D.
  • the cross-sectional shape of the second layer after etching corresponds to FIG. 6F.
  • FIG. 12 is an image showing the cross-sectional shape after etching by the manufacturing method of the present invention using a layer resistant to etching (A) and the cross-sectional shape after etching by the manufacturing method not using a layer resistant to etching (B).
  • p in Table 2 is 420 micrometers
  • d in Table 2 is 350 micrometers
  • ⁇ in Table 2 is 60 degrees.
  • the valley is the surface of the layer resistant to etching. Therefore, compared to the case of B, the valley is flatter and the corner R of the apex of the supplementary angle of the blaze angle of the trapezoid of the ridge is smaller.
  • the corner R in the case of B is about 70 nanometers, while the corner R in the case of A is 10 nanometers or less.
  • the corner R of the mold shown in FIG. 12B corresponds to the corner R of the optical element shown in FIG. 3.
  • the method of the present invention can make the above corner R 20 nanometers or less.
  • FIG. 13 is an image showing the cross-sectional shape after etching when the etching time is 120 seconds and 130 seconds.
  • p in Table 2 is 420 nanometers
  • d in Table 2 is 200 nanometers
  • ⁇ in Table 2 is 53 degrees.
  • the etching time is 130 seconds
  • ⁇ in Table 2 after etching is completed has the same value regardless of the etching time.
  • a mold with a grating was manufactured using the grating manufacturing method of the present invention, and a waveguide device was manufactured by injection molding using the mold.
  • Table 5 shows design parameters of an asymmetric trapezoidal grating as a diffraction grating.
  • Figure 14 is an image of a cross section of a mold with an asymmetric trapezoidal lattice with the parameters in Table 5, produced by the lattice manufacturing method of the present invention.
  • Table 6 shows the luminance of the waveguide device with asymmetric trapezoidal grating and the waveguide device with binary grating, both manufactured using the mold shown in FIG. 14, for the same light source.
  • the parameters of the binary grating are shown in Table 1.
  • the waveguide device is, for example, that disclosed in WO2023/021804A1.
  • the luminous flux of the incident light is 4.5 lumens.
  • the brightness of the waveguide device with the asymmetric trapezoidal grating is more than twice that of the waveguide device with the binary grating.
  • a single surface may be divided into multiple regions, and a grating with a different duty ratio may be formed in each region.
  • a grating formed in this way may be used, for example, to improve the uniformity of an image provided using a diffraction grating.
  • Figure 15A shows a single grating formed on one surface.
  • FIG. 15B shows multiple gratings with different duty ratios formed in multiple regions on a single surface.
  • the first method for producing a grating as shown in FIG. 15B is to vary the duty ratio by varying the etching time for each region in the etching process.
  • the step of etching the region to be etched while shielding the regions other than the region to be etched may be repeated.
  • Figure 16 shows images of the cross-sectional shape after etching when the etching time is 85 seconds, 75 seconds, and 67 seconds.
  • the duty ratios are 0.40, 0.50, and 0.58, respectively.
  • p in Table 2 is 420 nanometers
  • d in Table 2 is 100 nanometers
  • ⁇ in Table 2 is 26 degrees.
  • a second method for producing a grating like that shown in Figure 15B is to pattern each area differently to create different resist shapes, and then etch all areas for the same amount of time.
  • Figure 17 is an image showing the cross-sectional shape of the resist corresponding to Figure 6D and the cross-sectional shape of the grating corresponding to Figure 6F when the duty ratio is 0.58, 0.46, and 0.39.
  • p in Table 2 is 420 nanometers
  • d in Table 2 is 200 nanometers
  • ⁇ in Table 2 is 53 degrees.
  • Figures 18A-F are diagrams explaining how to form a lattice on a curved surface.
  • FIG. 18A is a diagram showing a lattice 200 formed on a substrate 110 by the method shown in FIG. 5.
  • the lattice 200 corresponds to the portions indicated by M1 and M2 in FIG. 6F.
  • FIG. 18B shows a state in which a film 300 made of ultraviolet curing resin or thermosetting resin with an adhesive sheet 400 attached thereto is pressed onto the lattice 200. The shape of the lattice 200' is transferred to the film 300.
  • FIG. 18C shows the film 300 with the adhesive sheet 400 attached, which has been removed from the lattice 200.
  • the lattice shape 200' has been transferred onto the film 300.
  • FIG. 18D shows the state in which a film 300 with an adhesive sheet 400 attached thereto has been attached to the curved surface of a substrate 120.
  • FIG. 18E shows the state in which the nickel film 500 with the shape 200' of the film 300 has been electroformed.
  • the lattice shape 200" is transferred to the nickel 500.
  • FIG. 18F shows the state in which a nickel film 500 with a lattice pattern 200" has been attached to the curved surface of the master mold 130.
  • Grating-equipped eyeglass lenses and the like can be manufactured by injection molding using the mold shown in Figure 18F.
  • Figures 19A-E are diagrams explaining other methods for forming a lattice on a curved surface.
  • FIG. 19A shows a grating 200 formed on a substrate 110 by the method shown in FIG. 5.
  • FIG. 19B shows the state in which a film 300 made of ultraviolet curing resin or thermosetting resin with a glass film 450 attached thereto is pressed onto the lattice 200. The shape of the lattice 200' is transferred to the film 300.
  • FIG. 19C shows the film 300 with the glass film 450 attached, which has been removed from the lattice 200.
  • the lattice shape 200' has been transferred to the film 300.
  • FIG. 19D shows the state in which the shape 200' of the film 300 is electroformed onto the nickel film 550.
  • the lattice shape 200'' is transferred to the nickel 550.
  • the thickness of the nickel film 550 is approximately 0.1 millimeters.
  • FIG. 19E shows the state in which a nickel film 550 with a lattice pattern 200" has been attached to the curved surface of the master mold 130.
  • Grating-equipped eyeglass lenses and the like can be manufactured by injection molding using the mold shown in Figure 19E.
  • a grating can be formed even on the curved surface of a spectacle lens with a diopter of 14 (focal length of 0.071 meters).
  • This section explains how to measure the blaze angle ⁇ and taper angle ⁇ of an actual grating.
  • Figure 20 is a diagram to explain how to measure the blaze angle ⁇ and taper angle ⁇ of an actual grating cross section.
  • Three straight lines parallel to the upper and lower bases of the trapezoid are drawn so as to divide the height of the ridges into four equal parts.
  • two straight lines are determined by least squares approximation of the two parts other than the highest and lowest of the four parts divided by the three straight lines.
  • the smaller of the interior angles formed by the two straight lines and the lower base is the blaze angle ⁇ , and the larger is the taper angle ⁇ .

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)

Abstract

L'invention concerne un réseau comprenant des crêtes linéaires d'une pluralité de seconds matériaux agencés à une période p dans une première direction sur une surface plate d'un élément d'un premier matériau, p étant de 0,3 à 1 micromètre, et, dans une section transversale perpendiculaire à la surface plate et à la première direction, la forme de chaque crête étant un trapèze comprenant un segment de ligne correspondant à la surface plate en tant que base inférieure, la hauteur d du trapèze étant inférieure ou égale à 0,83 × p, un premier côté et un second côté du trapèze autres que la base inférieure et la base supérieure étant définis en tant que premier côté et second côté, l'angle intérieur α formé par le premier côté et la base inférieure étant inférieur ou égal à 60 degrés, l'angle intérieur β formé par le second côté avec la base inférieure étant supérieur ou égal à 75 degrés, et le rapport de w1 et (w1 + w2) étant de 0,20 à 0,80, w1 étant la longueur de la base supérieure et w2 étant la différence entre p et la longueur de la base inférieure.
PCT/JP2024/035230 2023-11-17 2024-10-02 Réseau et procédé de fabrication d'un réseau Pending WO2025105067A1 (fr)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015049376A (ja) * 2013-09-02 2015-03-16 セイコーエプソン株式会社 光学デバイス及び画像表示装置
CN106772734A (zh) * 2017-01-03 2017-05-31 中国科学院上海光学精密机械研究所 宽带高衍射效率非对称形貌反射型光栅
CN110596801A (zh) * 2019-09-10 2019-12-20 南方科技大学 闪耀光栅及其制备方法和应用
CN110632689A (zh) * 2019-08-16 2019-12-31 瑞声通讯科技(常州)有限公司 表面浮雕光栅结构的制作方法
JP2022547219A (ja) * 2019-09-11 2022-11-10 マジック リープ， インコーポレイテッド 低減された偏光感度を有する回折格子を伴うディスプレイデバイス
WO2023220480A1 (fr) * 2022-05-13 2023-11-16 Magic Leap, Inc. Réseau de couplage d'entrée/sortie et dispositif d'affichage le comprenant

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015049376A (ja) * 2013-09-02 2015-03-16 セイコーエプソン株式会社 光学デバイス及び画像表示装置
CN106772734A (zh) * 2017-01-03 2017-05-31 中国科学院上海光学精密机械研究所 宽带高衍射效率非对称形貌反射型光栅
CN110632689A (zh) * 2019-08-16 2019-12-31 瑞声通讯科技(常州)有限公司 表面浮雕光栅结构的制作方法
CN110596801A (zh) * 2019-09-10 2019-12-20 南方科技大学 闪耀光栅及其制备方法和应用
JP2022547219A (ja) * 2019-09-11 2022-11-10 マジック リープ， インコーポレイテッド 低減された偏光感度を有する回折格子を伴うディスプレイデバイス
WO2023220480A1 (fr) * 2022-05-13 2023-11-16 Magic Leap, Inc. Réseau de couplage d'entrée/sortie et dispositif d'affichage le comprenant

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