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WO2025182030A1 - Selective cooperation system for semiconductor circuit breaker - Google Patents

Selective cooperation system for semiconductor circuit breaker

Info

Publication number
WO2025182030A1
WO2025182030A1 PCT/JP2024/007611 JP2024007611W WO2025182030A1 WO 2025182030 A1 WO2025182030 A1 WO 2025182030A1 JP 2024007611 W JP2024007611 W JP 2024007611W WO 2025182030 A1 WO2025182030 A1 WO 2025182030A1
Authority
WO
WIPO (PCT)
Prior art keywords
current
circuit breaker
semiconductor
semiconductor circuit
switches
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/JP2024/007611
Other languages
French (fr)
Japanese (ja)
Inventor
説志 岩下
隆 杭谷
雄大 相良
大樹 道念
康宏 神納
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to PCT/JP2024/007611 priority Critical patent/WO2025182030A1/en
Publication of WO2025182030A1 publication Critical patent/WO2025182030A1/en
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/02Details
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/02Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current

Definitions

  • This disclosure relates to a semiconductor circuit breaker selective coordination system in which a semiconductor circuit breaker serves as the main circuit breaker and the branch side serves as a switch.
  • a selective circuit breaker that includes a main circuit breaker, a current reduction means that temporarily reduces an overcurrent when an overcurrent flows due to an accident, and multiple branch circuit breakers installed on the branch side of the electrical circuit.
  • the selective circuit breaker will trip a branch circuit breaker when an accident occurs on the secondary side of the branch circuit breaker, and will trip the branch circuit breaker if the overcurrent does not return to a set value or below within a predetermined time after the accident (see, for example, Patent Document 1).
  • the present disclosure was made in light of the above, and aims to provide a semiconductor circuit breaker selection and coordination system that allows for a simple and inexpensive configuration of distribution panels.
  • the semiconductor circuit breaker selection and coordination system disclosed herein comprises a semiconductor circuit breaker that opens and closes an electric circuit using a semiconductor element, a first current sensor that measures the current flowing in the semiconductor circuit breaker, multiple switches connected to the load side of the semiconductor circuit breaker, multiple second current sensors that measure the current flowing in each of the multiple switches, and a control unit that causes the semiconductor element to perform current-limiting control when the first current sensor detects a fault current, determines from the multiple switches through which the fault current has flowed based on the currents measured by the multiple second current sensors, and causes the switch to open after the current-limiting control has been performed.
  • Each of the multiple switches has an open/close contact or a semiconductor element.
  • the semiconductor circuit breaker selection and coordination system disclosed herein has the advantage of enabling the construction of a simple and inexpensive distribution panel.
  • FIG. 1 is a diagram showing a configuration of a semiconductor circuit breaker selection coordination system according to a first embodiment
  • FIG. 1 is a diagram showing a single-pole configuration of a semiconductor module in a semiconductor circuit breaker included in a semiconductor circuit breaker selection coordination system according to a first embodiment
  • 1 is a flowchart showing the procedure of an operation performed by a semiconductor circuit breaker included in a semiconductor circuit breaker selection coordination system according to a first embodiment.
  • FIG. 1 is an explanatory diagram for explaining the operation of the semiconductor circuit breaker selective coordination system according to the first embodiment.
  • FIG. 10 is a diagram showing the configuration of a semiconductor circuit breaker selective coordination system according to a second embodiment.
  • FIG. 10 is a flowchart showing the procedure of an operation performed by a semiconductor circuit breaker included in a semiconductor circuit breaker selection coordination system according to a second embodiment.
  • FIG. 10 is a diagram showing the configuration of a semiconductor circuit breaker selective coordination system according to a third embodiment.
  • FIG. 8 is a diagram showing the state of the electric circuit when the semiconductor circuit breaker operates, in order to explain a method for estimating the current of each branch circuit shown in FIG. 7 from the electric wire specifications.
  • 10 is a flowchart showing the procedure of an operation performed by a semiconductor circuit breaker included in a semiconductor circuit breaker selection coordination system according to a third embodiment.
  • FIG. 10 is a diagram showing a current waveform when a semiconductor circuit breaker included in a semiconductor circuit breaker selective coordination system according to a third embodiment is performing a current limiting operation.
  • FIG. 1 is a diagram showing a processor in a case where some or all of the functions of a current measurement unit and a control unit included in the semiconductor circuit breaker selective coordination system according to the first embodiment are realized by the processor.
  • FIG. 1 is a diagram showing a processing circuit in the case where some or all of the functions of a current measurement unit and a control unit included in the semiconductor circuit breaker selective coordination system according to the first embodiment are realized by the processing circuit.
  • FIG. 1 is a diagram showing the configuration of a semiconductor circuit breaker selection coordination system 100 according to a first embodiment.
  • the semiconductor circuit breaker selection coordination system 100 includes a semiconductor circuit breaker 1 that uses a semiconductor element to interrupt an electric circuit 2.
  • the semiconductor element is a semiconductor module 12, which will be described later.
  • the semiconductor circuit breaker selection coordination system 100 further includes a plurality of switches 21-2N and a plurality of second current sensors 31-3N connected in parallel to the load side of the semiconductor circuit breaker 1.
  • the number of the plurality of second current sensors 31-3N is the same as the number of the plurality of switches 21-2N.
  • Each of the plurality of second current sensors 31-3N is connected to a corresponding one of the plurality of switches 21-2N.
  • the second current sensor 31 is connected to the switch 21, and the second current sensor 3N is connected to the switch 2N.
  • Each of the multiple second current sensors 31-3N is connected to a corresponding load.
  • Figure 1 shows multiple loads 41-4N.
  • the number of multiple loads 41-4N is the same as the number of multiple second current sensors 31-3N.
  • load 41 is connected to second current sensor 31, and load 4N is connected to second current sensor 3N.
  • Each of the multiple second current sensors 31-3N detects the current flowing through the corresponding load.
  • second current sensor 31 detects the current flowing through load 41
  • second current sensor 3N detects the current flowing through load 4N.
  • the semiconductor circuit breaker 1 comprises a semiconductor module 12 that is provided on the electrical circuit 2 and turns the current flowing through the electrical circuit 2 on and off; a mechanical element 13 that is provided on the electrical circuit 2 in series with the semiconductor module 12 and opens and closes the electrical circuit 2; a first current sensor 14 that detects the current flowing through the electrical circuit 2; a current measurement unit 15 that receives the output signal of the first current sensor 14 and measures the current flowing through the electrical circuit 2; and a control unit 16 that controls the semiconductor module 12 and the mechanical element 13 based on the current value measured by the current measurement unit 15.
  • the current values detected by each of the multiple second current sensors 31-3N are also input to the current measurement unit 15.
  • the semiconductor module 12 and mechanical element 13 are, for example, three-pole elements corresponding to three-phase AC.
  • Figure 2 is a diagram showing the single-pole configuration of the semiconductor module 12 in the semiconductor circuit breaker 1 included in the semiconductor circuit breaker selection coordination system 100 according to embodiment 1.
  • Figure 2 shows the single-pole structure of the semiconductor module 12 shown in Figure 1.
  • the single-pole structure shown in Figure 2 is a structure that is responsible for energizing and blocking current for each phase.
  • Each of the semiconductor module 12 and mechanical element 13 has three identical structures corresponding to the three power lines of the U phase, V phase, and W phase.
  • the single-pole structure of the semiconductor module 12 shown in Figure 2 includes two semiconductor elements 121.
  • Each semiconductor element 121 is a semiconductor switching element.
  • the on/off state of each semiconductor element 121 is controlled by a gate control signal s2 from the control unit 16.
  • a gate control signal s2 from the control unit 16.
  • the semiconductor element 121 When the semiconductor element 121 is on, it energizes the electrical circuit connecting the power source and the load, and when the state of the semiconductor element 121 switches from on to off, it interrupts the current in the electrical circuit.
  • Semiconductor element 121 has unidirectional blocking capability.
  • Semiconductor element 121 is, for example, a metal oxide semiconductor field effect transistor (MOSFET) or an insulated gate bipolar transistor (IGBT). If semiconductor element 121 is a MOSFET, one terminal 122 of semiconductor element 121 is a drain terminal, and the other terminal 123 of semiconductor element 121 is a source terminal. If semiconductor element 121 is an IGBT, one terminal 122 is a collector terminal, and the other terminal 123 is an emitter terminal. Semiconductor element 121 can only block current of the polarity flowing from terminal 122 to terminal 123.
  • MOSFET metal oxide semiconductor field effect transistor
  • IGBT insulated gate bipolar transistor
  • two semiconductor elements 121 are connected in series with the terminal 122 of one semiconductor element 121 facing the terminal 122 of the other semiconductor element 121.
  • the two semiconductor elements 121 may also be connected in series with the terminal 123 of one semiconductor element 121 facing the terminal 123 of the other semiconductor element 121.
  • the diode 124 is connected in parallel with the semiconductor element 121. The diode 124 bypasses currents in directions that the semiconductor element 121 cannot block.
  • Figure 3 is a flowchart showing the procedure of the operation performed by the semiconductor circuit breaker 1 included in the semiconductor circuit breaker selection coordination system 100 according to the first embodiment.
  • Figure 3 mainly shows the procedure of the operation performed by the control unit 16 included in the semiconductor circuit breaker 1.
  • the current measurement unit 15 measures the current value I M detected by the first current sensor 14.
  • the current measurement unit 15 measures the current values I SW1 to I SWN detected by each of the second current sensors 31 to 3N.
  • step S103 the control unit 16 determines whether the current value I 1 M measured in step S101 by the first current sensor 14 is greater than a first threshold value. If the control unit 16 determines that the current value I 1 M is greater than the first threshold value (Yes in S103), the operation proceeds to step S104. If the control unit 16 determines that the current value I 1 M is equal to or less than the first threshold value (No in S103), the operation proceeds to step S105.
  • step S104 the control unit 16 immediately turns off the semiconductor module 12 and cuts off the current. This is an operation performed because it may be difficult to perform current limiting control in the semiconductor module 12, and cutting off the current may also be difficult. That is, in step S104, the control unit 16 immediately cuts off the current in the semiconductor module 12.
  • the operation of step S104 is indicated by the phrase "Semiconductor element OFF.”
  • step S105 the control unit 16 determines whether the current value I 1 M detected by the first current sensor 14 measured in step S101 is greater than a second threshold value.
  • the second threshold value is smaller than the first threshold value. If the control unit 16 determines that the current value I 1 M is greater than the second threshold value (Yes in S105), the operation proceeds to step S106. If the control unit 16 determines that the current value I 1 M is equal to or less than the second threshold value (No in S105), the operation returns to step S101, and the operations from step S101 to step S103 are performed.
  • step S106 because the current value I 1 M detected by the first current sensor 14 is greater than the second threshold value but less than the first threshold value, the control unit 16 switches the semiconductor module 12 to start current-limiting control of the fault current.
  • the reason for starting current-limiting control is that, because the current value I 1 M is greater than the second threshold value, some kind of fault or overcurrent has occurred, but because the current value I 1 M is less than the first threshold value, current-limiting control is possible in the semiconductor module 12, and by limiting the current, it is possible to interrupt the current at the multiple switches 21-2N on the load side.
  • the operation of step S106 is indicated by the phrase "start current-limiting control by semiconductor elements.”
  • FIG. 4 is an explanatory diagram illustrating the operation of the semiconductor circuit breaker selective coordination system 100 according to embodiment 1.
  • power is turned on and current begins to flow, but because a short-circuit fault has occurred in the branch circuit of load 41, the current flowing through load 41 increases, causing the overall current to also increase.
  • the control unit 16 detects the fault current, and the semiconductor circuit breaker 1 begins current-limiting control to suppress the increase in current.
  • step S107 the control unit 16 determines whether the current values I SW1 to I SWN detected by the second current sensors 31 to 3N measured in step S102 are greater than the reference value I reference, starting with the current value I SW1 detected by the second current sensor 31. If the control unit 16 determines that the measured current values I SW1 to I SWN are greater than the reference value I reference (Yes in S107), the operation proceeds to step S109. If the control unit 16 determines that the measured current values I SW1 to I SWN are equal to or less than the reference value I reference (No in S107), the operation proceeds to step S108, and then to step S107 again to determine the current value I SW1 of the next branch circuit. This operation is repeated until it is determined in step S107 that I SW1 to I SWN are greater than the reference value I reference .
  • step S109 the control unit 16 identifies which branch circuit an excessive current has flowed in, based on the current values detected by the multiple second current sensors 31-3N.
  • the operation of step S109 is indicated by the phrase "identify the fault location in the branch circuit.”
  • the control unit 16 outputs a command to open the contacts to the switch of the branch circuit identified in step S109 from among the multiple switches 21-2N that make up the branch circuits. At this time, the semiconductor module 12 has limited the fault current, so the multiple switches 21-2N are able to interrupt the current.
  • the operation of step S110 is indicated by the phrase "open the switch of the branch circuit in which the fault was detected.”
  • step S111 since the control unit 16 opened the switch of the branch where the fault occurred in step S110, it stops the current-limiting control by the semiconductor module 12 and turns on the semiconductor module 12.
  • the operation of step S111 is indicated by the phrase "Stop current-limiting control of semiconductor element and turn semiconductor element ON.”
  • the operation related to step S111 will be further explained using Figure 4.
  • the switch is opened and the current flowing to the load 41 is interrupted, and thereafter the control unit 16 stops the current-limiting control by the semiconductor module 12 and the semiconductor module 12 is turned on, so the current in the load 42 continues to flow.
  • the semiconductor circuit breaker selective coordination system 100 of embodiment 1 includes a semiconductor circuit breaker 1 that opens and closes an electric circuit 2 using a semiconductor module 12; a first current sensor 14 that measures the current flowing through the semiconductor circuit breaker 1; multiple switches 21-2N connected to the load side of the semiconductor circuit breaker 1 and having open/close contacts; multiple second current sensors 31-3N that measure the current flowing through each of the multiple switches 21-2N; and a control unit 16 that, when a current measurement unit 15 detects a fault current, causes the semiconductor module 12 to perform current limiting control, determines which of the multiple switches 21-2N has the fault current flowing through it based on the current values measured by the multiple second current sensors 31-3N, and, after the current limiting control has been performed, opens the switch determined to have the fault current flowing through it.
  • the semiconductor circuit breaker selective coordination system 100 can use switches in branch circuits, allowing for a simple and inexpensive distribution panel configuration.
  • the first current sensor 14, rather than the current measurement unit 15, may detect the fault current.
  • Each of the multiple switches 21-2N may have a semiconductor element instead of a switching contact.
  • Each of the multiple switches 21-2N has a low breaking capacity.
  • FIG. 5 is a diagram illustrating the configuration of a semiconductor circuit breaker selective coordination system 101 according to a second embodiment.
  • the semiconductor circuit breaker 1A includes a load characteristic setting unit 17 that sets the load characteristics of the loads 41 to 4N, for example, a threshold value corresponding to the magnitude of the inrush current, for each branch circuit.
  • the load characteristic setting unit 17 has a function of inputting the characteristics of each of the loads 41 to 4N connected to the load sides of the multiple switches 21 to 2N to the control unit 16.
  • the configuration of the semiconductor circuit breaker selective coordination system 101 is the same as the configuration of the semiconductor circuit breaker selective coordination system 100 according to the first embodiment. Therefore, detailed descriptions of the components of the semiconductor circuit breaker selective coordination system 101, other than the load characteristic setting unit 17, are omitted.
  • the control unit 16 detects a fault current based on the characteristics.
  • Figure 6 is a flowchart showing the procedure of operations performed by the semiconductor circuit breaker 1A included in the semiconductor circuit breaker selection coordination system 101 according to the second embodiment.
  • Figure 6 mainly shows the procedure of operations performed by the control unit 16 included in the semiconductor circuit breaker 1A.
  • Steps S201 to S206 and step S212 are the same as steps S101 to S106 and step S111 in the first embodiment, and therefore detailed explanations of steps S201 to S206 and step S212 will be omitted.
  • step S207 after the current limiting control is started in step S206, the control unit 16 sets the current threshold I reference N for each branch circuit set by the load characteristic setting unit 17, starting from the branch circuit connected to the switch 21.
  • the control unit 16 determines whether the current value I SW N detected by the second current sensor in the set branch circuit is greater than the threshold value I Reference N. If the control unit 16 determines that the current value I SW N is greater than the threshold value I Reference N (Yes in S208), it determines that the branch circuit corresponding to that current value I SW N is the faulty branch circuit, and the operation proceeds to step S210. If the control unit 16 determines that the current value I SW N is equal to or less than the threshold value I Reference N (No in S208), it determines that the branch circuit corresponding to that current value I SW N is not the faulty branch circuit, and the operation proceeds to step S209 to determine the next branch circuit.
  • step S209 the control unit 16 designates the next branch circuit as the branch circuit to be processed next in steps S207 and S208, and the operation returns to step S207.
  • the operations from step S207 to step S209 are repeated until a branch circuit whose current value I SW N is greater than the threshold value I reference N is found in step S208.
  • the operation of step S209 is indicated by the phrase "set the next branch circuit to be judged.”
  • step S210 when a branch circuit having a current value I SW N greater than the threshold value I reference N is found, the control unit 16 identifies the branch circuit as the fault circuit.
  • the operation of step S210 is indicated by the phrase "identify the fault location of the branch circuit.”
  • step S211 the control unit 16 issues a command to open the switch of the branch circuit identified in step S210, and operation proceeds to the next step S212.
  • step S211 the operation of step S211 is indicated by the phrase "Open the switch of the branch circuit in which the fault was detected.”
  • the semiconductor circuit breaker 1A has a load characteristic setting unit 17 that sets the load characteristics of the multiple loads 41-4N, for example, a threshold value corresponding to the magnitude of the inrush current, for each branch circuit, and can set the load characteristics, for example, a threshold value corresponding to the magnitude of the inrush current, for each branch circuit. Because the semiconductor circuit breaker 1A outputs an opening command to the multiple load-side switches 21-2N, it can detect inrush currents, etc., and suppress the issuance of opening commands to the multiple switches 21-2N.
  • FIG. 7 is a diagram showing the configuration of a semiconductor circuit breaker selective coordination system 102 according to a third embodiment.
  • the semiconductor circuit breaker selective coordination system 102 does not include the multiple second current sensors 31-3N included in the semiconductor circuit breaker selective coordination system 100 according to the first embodiment.
  • the semiconductor circuit breaker 1B includes a wire characteristic setting unit 18 for setting the inductance of the wires connecting the multiple switches 21-2N to each of the loads 41-4N as the characteristics of each of the loads 41-4N connected to the load sides of the multiple switches 21-2N.
  • the configuration of the semiconductor circuit breaker 1B, other than the wire characteristic setting unit 18, is the same as that of the semiconductor circuit breaker 1 according to the first embodiment.
  • FIG. 7 shows multiple resistors 51-5N and multiple inductors 61-6N. The corresponding resistors and inductors schematically represent the electrical configuration of the wires.
  • FIG. 8 is a diagram showing the state of the electric circuit when semiconductor circuit breaker 1B operates, in order to explain a method for estimating the current of each branch circuit shown in FIG. 7 from the electric wire specifications.
  • voltage V is applied across semiconductor circuit breaker 1B.
  • Control unit 16 measures voltage V.
  • Power supply voltage E of electric circuit 11 is also measured in real time, and the value of power supply voltage E is also input to control unit 16.
  • Current value I 1 M which is the value of the current flowing through each branch circuit, is measured by first current sensor 14 of semiconductor circuit breaker 1B. Current value I 1 M is input to control unit 16.
  • semiconductor circuit breaker 1B is shown as "SSCB1B,” and "I, I 1 , I 2 , ..., I N " represent the currents flowing through the corresponding electric wires.
  • L accident (EV- ⁇ R N I N )/(dI/dt) ... (2)
  • the inductance L fault can be expressed by the following equation (3).
  • L accident (EV)/(dI/dt)...(3)
  • the inductance L fault is calculated by inputting the measured values of the power supply voltage E, the voltage V, and dI/dt into equation (3).
  • the inductance LN of each branch circuit can be calculated by setting the wire diameter, conductor center distance, and wire length of the wires connected to each load using the wire characteristics setting unit 18. Since the fault here is assumed to be a short circuit fault on the load side, the conductor center distance refers to the distance between the centers of the conductors of the wires that make up the sending and returning current in the circuit where the short circuit fault occurred.
  • control unit 16 selects the inductance L closest to the inductance L fault calculated from the formula (3) from the inductances L N of each branch circuit calculated from the wire diameter, conductor center distance, and wire length of the wires connected to each switch set by the wire characteristics setting unit 18, estimates that the branch circuit corresponding to that inductance is the fault circuit, and turns off the switch of that circuit.
  • an inductance calculated in advance from the type and length of the wire may be directly input to the wire characteristics setting unit 18, or the inductance per unit length for each type of wire listed in an electric wire handbook or the like may be stored in the wire characteristics setting unit 18, and the inductance may be calculated by inputting the type and length of the wire.
  • the unit of the inductance per unit length is mH/km, and the value of the inductance is, for example, 0.1 to 0.3 mH/km.
  • the control unit 16 After turning off the switch, the control unit 16 again determines whether the fault current has been interrupted based on the dI/dt measured by the first current sensor 14. If the control unit 16 determines that the fault current has not been interrupted, it selects the inductance that is second closest to the inductance L calculated by equation (3) and turns off the switch of the circuit corresponding to the selected inductance. The control unit 16 again determines whether the fault current has been interrupted based on the dI/dt measured by the first current sensor 14. The control unit 16 repeats the above operation to interrupt the fault circuit.
  • Fig. 9 is a flowchart showing the procedure of the operation performed by the semiconductor circuit breaker 1B included in the semiconductor circuit breaker selection coordination system 102 according to the third embodiment.
  • Fig. 9 mainly shows the procedure of the operation performed by the control unit 16 included in the semiconductor circuit breaker 1B.
  • the control unit 16 calculates the inductances L1 to LN of the wires in each branch circuit from the wire diameter, wire length, etc. of the wires connected to each load set by the wire characteristics setting unit 18. That is, in step S301, the control unit 16 calculates the inductance of each branch circuit from the wire specifications.
  • Steps S302 to S307 are similar to steps S101, S103 to S106, and S111 in embodiment 1, so detailed explanations of steps S302 to S307 will be omitted.
  • the control unit 16 If the current value I M measured by the first current sensor 14 is greater than the first threshold value (Yes in S303), the control unit 16 turns off the semiconductor module 12, and if the current value I M is equal to or less than the first threshold value and greater than the second threshold value (No in S303, Yes in S305), the control unit 16 starts current limiting control in step S306 and then performs inductance estimation processing 300 for the fault branch circuit.
  • Fig. 10 is a flowchart showing the procedure of the operation of the fault branch circuit inductance estimation process 300 in Fig. 9.
  • step S311 the control unit 16 calculates the inductance L fault of the branch circuit where the fault occurred based on equation (3).
  • step S312 the control unit 16 extracts an inductance closest to the inductance L fault calculated in step S311 from the inductances L 1 to L N of the electric wires in each branch circuit calculated in step S301.
  • the operation of step 312 is indicated by the phrase "selection of L N closest to L fault .”
  • step S313 the control unit 16 opens the switch in the branch circuit of the inductance extracted in step S312.
  • the operation of step S313 is indicated by the phrase "open the switch of the branch circuit at the selected L N.
  • step S314 to confirm whether the opened switch is actually the branch circuit where the fault occurred, the control unit 16 measures dI/dt when the semiconductor module 12 is on, based on the current waveform shown in FIG. 11.
  • FIG. 11 is a diagram showing a current waveform when the semiconductor circuit breaker 1B included in the semiconductor circuit breaker selection coordination system 102 according to the third embodiment is performing a current limiting operation.
  • ⁇ t which is the difference between t2 and t1
  • c1 and c2 represents dI.
  • step S315 the control unit 16 determines whether the dI/dt measured in step S314 is smaller than the third threshold value. If the control unit 16 determines that the dI/dt is smaller than the third threshold value (Yes in S315), it can be determined that the fault circuit has been disconnected by opening the switch in step S313, and the fault branch circuit inductance estimation process 300 ends. Operation proceeds to step S307 in Figure 9.
  • step S316 the control unit 16 closes the switch that was opened in step S313 again.
  • the operation of step 316 is indicated by the phrase "close the switch of the branch circuit at L N. "
  • step S317 the control unit 16 excludes from the selection candidates the inductance of the branch circuit whose switch was opened in step S313 from among the wire inductances L1 to LN in each branch circuit calculated in step S301, before extracting the inductance closest to the inductance L fault in the subsequent step S312.
  • the operation of step S317 is indicated by the phrase "exclude selected LN from selection candidates.” The operation returns from step S317 to step S312, and the control unit 16 performs the operations from step S312 to step S315.
  • the semiconductor circuit breaker selection and coordination system 102 includes a semiconductor circuit breaker 1B that opens and closes the electric circuit 2 using a semiconductor module 12; a first current sensor 14 that measures the current flowing through the semiconductor circuit breaker 1B; multiple switches 21-2N that are connected to the load side of the semiconductor circuit breaker 1B and have open/close contacts; a wire characteristic setting unit 18 that sets the wire diameter and wire length of the wire connecting the multiple switches 21-2N to each load 41-4N as characteristics of the respective loads 41-4N connected to the load side of the multiple switches 21-2N; and a control unit 16 that, when the first current sensor 14 detects a fault current, causes the semiconductor module 12 to perform current limiting control, selects a switch from the multiple switches 21-2N through which the fault current flows based on the fault current, wire diameter, and wire length, and opens the selected switch after the current limiting control has been performed.
  • This allows switches to be used in branch circuits, resulting in a simple and inexpensive distribution panel.
  • the semiconductor circuit breaker selection and coordination system 102 can identify the branch circuit in which the fault occurred without requiring a current sensor to measure the current for each of the multiple switches 21-2N, allowing for a simple and inexpensive configuration of the distribution panel.
  • the semiconductor circuit breaker selection coordination system 102 opens the switch, measures dI/dt when the semiconductor module 12 is on, and confirms whether the selected branch circuit was actually the branch circuit that caused the fault. If it is incorrect, it selects the next branch circuit and again checks dI/dt when the semiconductor module 12 is on, thereby ensuring that the fault circuit is shut off.
  • FIG. 12 is a diagram showing a processor 91 in the case where some or all of the functions of the current measurement unit 15 and control unit 16 of the semiconductor circuit breaker selection coordination system 100 according to embodiment 1 are realized by the processor 91. In other words, some or all of the functions of the current measurement unit 15 and control unit 16 may be realized by the processor 91 executing a program stored in memory 92.
  • the processor 91 is a CPU (Central Processing Unit), processing system, arithmetic system, microprocessor, or DSP (Digital Signal Processor).
  • Memory 92 is also shown in FIG. 12.
  • the processor 91 When some or all of the functions of the current measurement unit 15 and control unit 16 are realized by the processor 91, those functions are realized by the processor 91 in combination with software, firmware, or a combination of software and firmware.
  • the software or firmware is written as a program and stored in the memory 92.
  • the processor 91 realizes some or all of the functions of the current measurement unit 15 and control unit 16 by reading and executing the program stored in the memory 92.
  • the semiconductor circuit breaker selection coordination system 100 has a memory 92 for storing a program that results in some or all of the steps executed by the current measurement unit 15 and control unit 16. It can also be said that the program stored in the memory 92 causes a computer to execute some or all of the procedures or methods executed by the current measurement unit 15 and control unit 16.
  • Memory 92 may be, for example, non-volatile or volatile semiconductor memory such as RAM (Random Access Memory), ROM (Read Only Memory), flash memory, EPROM (Erasable Programmable Read Only Memory), EEPROM (Electrically Erasable Programmable Read-Only Memory), a magnetic disk, a flexible disk, an optical disk, a compact disk, a mini disk, or a DVD (Digital Versatile Disk).
  • RAM Random Access Memory
  • ROM Read Only Memory
  • flash memory EPROM (Erasable Programmable Read Only Memory), EEPROM (Electrically Erasable Programmable Read-Only Memory), a magnetic disk, a flexible disk, an optical disk, a compact disk, a mini disk, or a DVD (Digital Versatile Disk).
  • FIG. 13 is a diagram showing the processing circuit 93 when some or all of the functions of the current measurement unit 15 and control unit 16 of the semiconductor circuit breaker selection coordination system 100 according to embodiment 1 are realized by the processing circuit 93. In other words, some or all of the functions of the current measurement unit 15 and control unit 16 may be realized by the processing circuit 93.
  • the processing circuit 93 is dedicated hardware.
  • the processing circuit 93 may be, for example, a single circuit, a composite circuit, a programmed processor, a parallel programmed processor, an ASIC (Application Specific Integrated Circuit), an FPGA (Field-Programmable Gate Array), or a combination of these.
  • ASIC Application Specific Integrated Circuit
  • FPGA Field-Programmable Gate Array
  • Some of the functions of the current measurement unit 15 and the control unit 16 may be realized by dedicated hardware separate from the hardware that realizes the remaining functions of the current measurement unit 15 and the control unit 16.
  • Some of the functions possessed by the current measurement unit 15 and the control unit 16 may be realized by software or firmware, and the remaining functions may be realized by dedicated hardware. In this way, the functions possessed by the current measurement unit 15 and the control unit 16 can be realized by hardware, software, firmware, or a combination of these.
  • Some or all of the functions of the current measurement unit 15, control unit 16, and load characteristic setting unit 17 of the semiconductor circuit breaker selection coordination system 101 according to embodiment 2 may be implemented by a processor or a processing circuit.
  • the processor is the same as processor 91.
  • the processing circuit is the same as processing circuit 93.
  • Some or all of the functions of the current measurement unit 15, control unit 16, and wire characteristic setting unit 18 of the semiconductor circuit breaker selection coordination system 102 according to embodiment 3 may be implemented by a processor or a processing circuit.
  • the processor is the same as processor 91.
  • the processing circuit is the same as processing circuit 93.
  • 1, 1A, 1B semiconductor circuit breaker, 2: electrical path, 11: electrical circuit, 12: semiconductor module, 13: mechanical element, 14: first current sensor, 15: current measurement unit, 16: control unit, 17: load characteristics setting unit, 18: electrical wire characteristics setting unit, 21-2N: switches, 31-3N: second current sensors, 41-4N: loads, 51-5N: resistors, 61-6N: inductors, 91: processor, 92: memory, 93: processing circuit, 100, 101, 102: semiconductor circuit breaker selection and coordination system, 121: semiconductor element, 122, 123: terminals, 124: diode, 300: inductance estimation process for faulted branch circuit.

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Abstract

A selective coordination system (100) for a semiconductor circuit breaker comprises: a semiconductor circuit breaker (1) that opens and closes an electric path (2) by means of a semiconductor module (12); a first current sensor (14) that measures a current flowing through the semiconductor circuit breaker (1); a plurality of switches (21-2N) that are connected to the load side of the semiconductor circuit breaker (1); a plurality of second current sensors (31-3N) that measure a current flowing through each of the plurality of switches (21-2N); and a control unit (16). The control unit (16), upon detection of a fault current by the first current sensor (14): causes the semiconductor module (12) to perform current limiting control; determines, on the basis of the currents measured by the plurality of second current sensors (31-3N), a switch through which the fault current has flowed, from among the plurality of switches (21-2N); and causes said switch to perform open operation after the current limiting control is performed. Each of the plurality of switches (21-2N) has opening/closing contacts or a semiconductor element.

Description

半導体遮断器の選択協調システムSemiconductor circuit breaker selection and coordination system

 本開示は、半導体遮断器を主幹遮断器とし、分岐側を開閉器とする半導体遮断器の選択協調システムに関する。 This disclosure relates to a semiconductor circuit breaker selective coordination system in which a semiconductor circuit breaker serves as the main circuit breaker and the branch side serves as a switch.

 従来、主幹遮断器と、事故発生により過電流が流れたときに一時的に当該過電流を低減する電流低減手段と、分岐側電路に設けられた複数の分岐遮断器とを有し、事故が分岐遮断器の2次側で生じたときに当該分岐遮断器を遮断し、事故発生後所定時間経過しても過電流が設定値以下に復帰しないときに分岐遮断器を遮断する選択遮断装置が知られている(例えば、特許文献1参照)。 Conventionally, a selective circuit breaker has been known that includes a main circuit breaker, a current reduction means that temporarily reduces an overcurrent when an overcurrent flows due to an accident, and multiple branch circuit breakers installed on the branch side of the electrical circuit.The selective circuit breaker will trip a branch circuit breaker when an accident occurs on the secondary side of the branch circuit breaker, and will trip the branch circuit breaker if the overcurrent does not return to a set value or below within a predetermined time after the accident (see, for example, Patent Document 1).

特開平5-15053号公報Japanese Patent Application Publication No. 5-15053

 しかしながら、従来の技術は、主幹遮断器の限流性能が低いため、分岐遮断器にも機械式遮断器を配置し、分岐遮断器にも短絡電流を遮断することができる遮断容量が必要であるという課題がある。受配電盤をシンプルかつ安価に構成したいという要求がある。 However, with conventional technology, the current-limiting performance of the main circuit breaker is low, so mechanical circuit breakers must also be installed in the branch circuit breakers, and these branch circuit breakers also need to have the breaking capacity to interrupt short-circuit currents. There is a demand for simple, inexpensive switchboard configurations.

 本開示は、上記に鑑みてなされたものであって、受配電盤をシンプルかつ安価に構成することができる半導体遮断器の選択協調システムを得ることを目的とする。 The present disclosure was made in light of the above, and aims to provide a semiconductor circuit breaker selection and coordination system that allows for a simple and inexpensive configuration of distribution panels.

 上述した課題を解決し、目的を達成するために、本開示に係る半導体遮断器の選択協調システムは、半導体素子により電路の開閉を行う半導体遮断器と、半導体遮断器に流れる電流を計測する第1の電流センサと、半導体遮断器の負荷側に接続されている複数の開閉器と、複数の開閉器の各々に流れる電流を計測する複数の第2の電流センサと、第1の電流センサが事故電流を検出すると半導体素子に限流制御を行わせ、複数の第2の電流センサが計測した電流をもとに複数の開閉器の中から事故電流が流れた開閉器を判定し、限流制御が行われた後に開閉器に開動作させる制御部とを有する。複数の開閉器の各々は、開閉接点又は半導体素子を有する。 In order to solve the above-mentioned problems and achieve the objectives, the semiconductor circuit breaker selection and coordination system disclosed herein comprises a semiconductor circuit breaker that opens and closes an electric circuit using a semiconductor element, a first current sensor that measures the current flowing in the semiconductor circuit breaker, multiple switches connected to the load side of the semiconductor circuit breaker, multiple second current sensors that measure the current flowing in each of the multiple switches, and a control unit that causes the semiconductor element to perform current-limiting control when the first current sensor detects a fault current, determines from the multiple switches through which the fault current has flowed based on the currents measured by the multiple second current sensors, and causes the switch to open after the current-limiting control has been performed. Each of the multiple switches has an open/close contact or a semiconductor element.

 本開示に係る半導体遮断器の選択協調システムは、受配電盤をシンプルかつ安価に構成することができるという効果を奏する。 The semiconductor circuit breaker selection and coordination system disclosed herein has the advantage of enabling the construction of a simple and inexpensive distribution panel.

実施の形態1に係る半導体遮断器の選択協調システムの構成を示す図FIG. 1 is a diagram showing a configuration of a semiconductor circuit breaker selection coordination system according to a first embodiment; 実施の形態1に係る半導体遮断器の選択協調システムが有する半導体遮断器における半導体モジュールの単極の構成を示す図FIG. 1 is a diagram showing a single-pole configuration of a semiconductor module in a semiconductor circuit breaker included in a semiconductor circuit breaker selection coordination system according to a first embodiment. 実施の形態1に係る半導体遮断器の選択協調システムが有する半導体遮断器が行う動作の手順を示すフローチャート1 is a flowchart showing the procedure of an operation performed by a semiconductor circuit breaker included in a semiconductor circuit breaker selection coordination system according to a first embodiment. 実施の形態1に係る半導体遮断器の選択協調システムの動作を説明するための説明図FIG. 1 is an explanatory diagram for explaining the operation of the semiconductor circuit breaker selective coordination system according to the first embodiment. 実施の形態2に係る半導体遮断器の選択協調システムの構成を示す図FIG. 10 is a diagram showing the configuration of a semiconductor circuit breaker selective coordination system according to a second embodiment. 実施の形態2に係る半導体遮断器の選択協調システムが有する半導体遮断器が行う動作の手順を示すフローチャート10 is a flowchart showing the procedure of an operation performed by a semiconductor circuit breaker included in a semiconductor circuit breaker selection coordination system according to a second embodiment. 実施の形態3に係る半導体遮断器の選択協調システムの構成を示す図FIG. 10 is a diagram showing the configuration of a semiconductor circuit breaker selective coordination system according to a third embodiment. 図7に示される各分岐回路の電流を電線仕様から推定する方法を説明するため半導体遮断器が動作した際における電気回路の状態を示す図FIG. 8 is a diagram showing the state of the electric circuit when the semiconductor circuit breaker operates, in order to explain a method for estimating the current of each branch circuit shown in FIG. 7 from the electric wire specifications. 実施の形態3に係る半導体遮断器の選択協調システムが有する半導体遮断器が行う動作の手順を示すフローチャート10 is a flowchart showing the procedure of an operation performed by a semiconductor circuit breaker included in a semiconductor circuit breaker selection coordination system according to a third embodiment. 図9の事故分岐回路のインダクタンス推定処理の動作の手順を示すフローチャートA flowchart showing the procedure of the operation of the inductance estimation process of the fault branch circuit in FIG. 実施の形態3に係る半導体遮断器の選択協調システムが有する半導体遮断器が限流動作を行っている際の電流波形を示す図FIG. 10 is a diagram showing a current waveform when a semiconductor circuit breaker included in a semiconductor circuit breaker selective coordination system according to a third embodiment is performing a current limiting operation. 実施の形態1に係る半導体遮断器の選択協調システムが有する電流計測部及び制御部の一部又は全部の機能がプロセッサによって実現される場合のプロセッサを示す図FIG. 1 is a diagram showing a processor in a case where some or all of the functions of a current measurement unit and a control unit included in the semiconductor circuit breaker selective coordination system according to the first embodiment are realized by the processor. 実施の形態1に係る半導体遮断器の選択協調システムが有する電流計測部及び制御部の一部又は全部の機能が処理回路によって実現される場合の処理回路を示す図FIG. 1 is a diagram showing a processing circuit in the case where some or all of the functions of a current measurement unit and a control unit included in the semiconductor circuit breaker selective coordination system according to the first embodiment are realized by the processing circuit.

 以下に、実施の形態に係る半導体遮断器の選択協調システムを図面に基づいて詳細に説明する。 Below, a detailed description of the semiconductor circuit breaker selective coordination system according to an embodiment is provided with reference to the accompanying drawings.

実施の形態1.
 図1は、実施の形態1に係る半導体遮断器の選択協調システム100の構成を示す図である。半導体遮断器の選択協調システム100は、半導体素子により電路2の遮断を行う半導体遮断器1を有する。当該半導体素子は、後述される半導体モジュール12である。半導体遮断器の選択協調システム100は、半導体遮断器1の負荷側に並列に接続されている複数の開閉器21~2Nと、複数の第2の電流センサ31~3Nとを更に有する。複数の第2の電流センサ31~3Nの個数は、複数の開閉器21~2Nの個数と同じである。複数の第2の電流センサ31~3Nの各々は複数の開閉器21~2Nのうちの対応する一つの開閉器に接続されている。例えば、第2の電流センサ31は開閉器21に接続されており、第2の電流センサ3Nは開閉器2Nに接続されている。
Embodiment 1.
FIG. 1 is a diagram showing the configuration of a semiconductor circuit breaker selection coordination system 100 according to a first embodiment. The semiconductor circuit breaker selection coordination system 100 includes a semiconductor circuit breaker 1 that uses a semiconductor element to interrupt an electric circuit 2. The semiconductor element is a semiconductor module 12, which will be described later. The semiconductor circuit breaker selection coordination system 100 further includes a plurality of switches 21-2N and a plurality of second current sensors 31-3N connected in parallel to the load side of the semiconductor circuit breaker 1. The number of the plurality of second current sensors 31-3N is the same as the number of the plurality of switches 21-2N. Each of the plurality of second current sensors 31-3N is connected to a corresponding one of the plurality of switches 21-2N. For example, the second current sensor 31 is connected to the switch 21, and the second current sensor 3N is connected to the switch 2N.

 複数の第2の電流センサ31~3Nの各々には対応する一つの負荷が接続される。図1には、複数の負荷41~4Nが示されている。複数の負荷41~4Nの個数は、複数の第2の電流センサ31~3Nの個数と同じである。例えば、第2の電流センサ31には負荷41が接続され、第2の電流センサ3Nには負荷4Nが接続される。複数の第2の電流センサ31~3Nの各々は、対応する負荷に流れる電流を検知する。例えば、第2の電流センサ31は負荷41に流れる電流を検知し、第2の電流センサ3Nは負荷4Nに流れる電流を検知する。 Each of the multiple second current sensors 31-3N is connected to a corresponding load. Figure 1 shows multiple loads 41-4N. The number of multiple loads 41-4N is the same as the number of multiple second current sensors 31-3N. For example, load 41 is connected to second current sensor 31, and load 4N is connected to second current sensor 3N. Each of the multiple second current sensors 31-3N detects the current flowing through the corresponding load. For example, second current sensor 31 detects the current flowing through load 41, and second current sensor 3N detects the current flowing through load 4N.

 半導体遮断器1は、電路2に設けられ、電路2を流れる電流をオン及びオフする半導体モジュール12と、半導体モジュール12と直列に電路2に設けられていて電路2を開閉する機械素子13と、電路2を流れる電流を検出するための第1の電流センサ14と、第1の電流センサ14の出力信号が入力されて電路2を流れる電流を計測するための電流計測部15と、電流計測部15が計測した電流値をもとに半導体モジュール12及び機械素子13を制御する制御部16とを有する。電流計測部15には、複数の第2の電流センサ31~3Nの各々が検知した電流値も入力される。 The semiconductor circuit breaker 1 comprises a semiconductor module 12 that is provided on the electrical circuit 2 and turns the current flowing through the electrical circuit 2 on and off; a mechanical element 13 that is provided on the electrical circuit 2 in series with the semiconductor module 12 and opens and closes the electrical circuit 2; a first current sensor 14 that detects the current flowing through the electrical circuit 2; a current measurement unit 15 that receives the output signal of the first current sensor 14 and measures the current flowing through the electrical circuit 2; and a control unit 16 that controls the semiconductor module 12 and the mechanical element 13 based on the current value measured by the current measurement unit 15. The current values detected by each of the multiple second current sensors 31-3N are also input to the current measurement unit 15.

 実施の形態1では、半導体モジュール12及び機械素子13は、例えば、3相交流に対応する3極の素子である。図2は、実施の形態1に係る半導体遮断器の選択協調システム100が有する半導体遮断器1における半導体モジュール12の単極の構成を示す図である。つまり、図2は、図1に示される半導体モジュール12の単極の構造を示している。図2に示される単極の構造とは、相ごとの通電及び遮断を担う構造である。半導体モジュール12及び機械素子13の各々には、U相、V相及びW相の三つの電力線に対応して、同じ構造が3個設けられている。 In embodiment 1, the semiconductor module 12 and mechanical element 13 are, for example, three-pole elements corresponding to three-phase AC. Figure 2 is a diagram showing the single-pole configuration of the semiconductor module 12 in the semiconductor circuit breaker 1 included in the semiconductor circuit breaker selection coordination system 100 according to embodiment 1. In other words, Figure 2 shows the single-pole structure of the semiconductor module 12 shown in Figure 1. The single-pole structure shown in Figure 2 is a structure that is responsible for energizing and blocking current for each phase. Each of the semiconductor module 12 and mechanical element 13 has three identical structures corresponding to the three power lines of the U phase, V phase, and W phase.

 図2に示される半導体モジュール12の単極の構造には、2個の半導体素子121が含まれる。各半導体素子121は、半導体のスイッチング素子である。各半導体素子121は、制御部16からのゲート制御信号s2によって、通電のオン及びオフが制御される。各半導体素子121は、通電がオンである場合に電源と負荷とをつなぐ電気回路を通電させ、通電がオンからオフへ切り換わることで電気回路の電流を遮断する。 The single-pole structure of the semiconductor module 12 shown in Figure 2 includes two semiconductor elements 121. Each semiconductor element 121 is a semiconductor switching element. The on/off state of each semiconductor element 121 is controlled by a gate control signal s2 from the control unit 16. When the semiconductor element 121 is on, it energizes the electrical circuit connecting the power source and the load, and when the state of the semiconductor element 121 switches from on to off, it interrupts the current in the electrical circuit.

 半導体素子121は、単方向の遮断能力を持つ。半導体素子121は、例えば、金属酸化膜半導体電界効果トランジスタ(Metal Oxide Semiconductor Field Effect Transistor:MOSFET)又は絶縁ゲートバイポーラトランジスタ(Insulated Gate Bipolar Transistor:IGBT)である。半導体素子121がMOSFETである場合、半導体素子121の一方の端子122はドレイン端子であって、半導体素子121の他方の端子123はソース端子である。半導体素子121がIGBTである場合、一方の端子122はコレクタ端子であって、他方の端子123はエミッタ端子である。半導体素子121は、端子122から端子123へ流れる極性の電流のみを遮断可能である。 Semiconductor element 121 has unidirectional blocking capability. Semiconductor element 121 is, for example, a metal oxide semiconductor field effect transistor (MOSFET) or an insulated gate bipolar transistor (IGBT). If semiconductor element 121 is a MOSFET, one terminal 122 of semiconductor element 121 is a drain terminal, and the other terminal 123 of semiconductor element 121 is a source terminal. If semiconductor element 121 is an IGBT, one terminal 122 is a collector terminal, and the other terminal 123 is an emitter terminal. Semiconductor element 121 can only block current of the polarity flowing from terminal 122 to terminal 123.

 正方向の電流と逆方向の電流とのいずれも遮断する双方向遮断能力を半導体モジュール12に持たせるために、半導体モジュール12では、図2に示されるように、一つの半導体素子121の端子122が他の一つの半導体素子121の端子122と向かい合った状態で2個の半導体素子121が直列に接続されている。なお、一つの半導体素子121の端子123が他の一つの半導体素子121の端子123と向かい合った状態で2個の半導体素子121が直列に接続されてもよい。ダイオード124は、半導体素子121に並列に接続されている。ダイオード124は、半導体素子121が遮断することができない方向の電流をバイパスする。 In order to give the semiconductor module 12 the bidirectional blocking capability of blocking both forward and reverse currents, in the semiconductor module 12, as shown in FIG. 2, two semiconductor elements 121 are connected in series with the terminal 122 of one semiconductor element 121 facing the terminal 122 of the other semiconductor element 121. Note that the two semiconductor elements 121 may also be connected in series with the terminal 123 of one semiconductor element 121 facing the terminal 123 of the other semiconductor element 121. The diode 124 is connected in parallel with the semiconductor element 121. The diode 124 bypasses currents in directions that the semiconductor element 121 cannot block.

 次に、半導体遮断器の選択協調システム100の動作を図3のフローチャートをもとに説明する。図3は、実施の形態1に係る半導体遮断器の選択協調システム100が有する半導体遮断器1が行う動作の手順を示すフローチャートである。図3は、半導体遮断器1が有する制御部16が行う動作の手順を主に示している。ステップS101では、電流計測部15が、第1の電流センサ14が検知した電流値Iを計測する。ステップS102では、電流計測部15が、第2の電流センサ31~3Nの各々が検知した電流値ISW1~ISWNを計測する。 Next, the operation of the semiconductor circuit breaker selection coordination system 100 will be described with reference to the flowchart in Figure 3. Figure 3 is a flowchart showing the procedure of the operation performed by the semiconductor circuit breaker 1 included in the semiconductor circuit breaker selection coordination system 100 according to the first embodiment. Figure 3 mainly shows the procedure of the operation performed by the control unit 16 included in the semiconductor circuit breaker 1. In step S101, the current measurement unit 15 measures the current value I M detected by the first current sensor 14. In step S102, the current measurement unit 15 measures the current values I SW1 to I SWN detected by each of the second current sensors 31 to 3N.

 ステップS103では、制御部16は、ステップS101で計測された第1の電流センサ14が検知した電流値Iが、第1の閾値より大きいかどうかを判定する。電流値Iが第1の閾値より大きいと制御部16が判定した場合(S103でYes)、動作はステップS104に進み、電流値Iが第1の閾値以下であると制御部16が判定した場合(S103でNo)、動作はステップS105に進む。 In step S103, the control unit 16 determines whether the current value I 1 M measured in step S101 by the first current sensor 14 is greater than a first threshold value. If the control unit 16 determines that the current value I 1 M is greater than the first threshold value (Yes in S103), the operation proceeds to step S104. If the control unit 16 determines that the current value I 1 M is equal to or less than the first threshold value (No in S103), the operation proceeds to step S105.

 ステップS104では、制御部16は、半導体モジュール12を直ちにオフし、電流を遮断する。これは、半導体モジュール12で限流制御することが困難で、遮断も難しくなる可能性があるために行われる動作である。すなわち、ステップS104において、制御部16は、半導体モジュール12で電流を直ちに遮断する。図3では、ステップS104の動作は、「半導体素子OFF」という文言で示されている。 In step S104, the control unit 16 immediately turns off the semiconductor module 12 and cuts off the current. This is an operation performed because it may be difficult to perform current limiting control in the semiconductor module 12, and cutting off the current may also be difficult. That is, in step S104, the control unit 16 immediately cuts off the current in the semiconductor module 12. In Figure 3, the operation of step S104 is indicated by the phrase "Semiconductor element OFF."

 ステップS105では、制御部16は、ステップS101で計測された第1の電流センサ14が検知した電流値Iが第2の閾値より大きいかどうかを判定する。第2の閾値は、第1の閾値より小さい。電流値Iが第2の閾値より大きいと制御部16が判定した場合(S105でYes)、動作はステップS106に進む。電流値Iが第2の閾値以下であると制御部16が判定した場合(S105でNo)、動作はステップS101に戻り、ステップS101からステップS103までの動作が行われる。 In step S105, the control unit 16 determines whether the current value I 1 M detected by the first current sensor 14 measured in step S101 is greater than a second threshold value. The second threshold value is smaller than the first threshold value. If the control unit 16 determines that the current value I 1 M is greater than the second threshold value (Yes in S105), the operation proceeds to step S106. If the control unit 16 determines that the current value I 1 M is equal to or less than the second threshold value (No in S105), the operation returns to step S101, and the operations from step S101 to step S103 are performed.

 ステップS106では、第1の電流センサ14が検知した電流値Iが、第2の閾値より大きく第1の閾値以下であるので、制御部16は、半導体モジュール12をスイッチング動作させ事故電流の限流制御を開始する。限流制御を開始するのは、電流値Iが第2の閾値より大きいので、何らかの事故又は過電流が発生したが、電流値Iが第1の閾値以下であるので、半導体モジュール12での限流制御が可能で、限流することで、負荷側の複数の開閉器21~2Nでの電流遮断が可能であるためである。図3では、ステップS106の動作は、「半導体素子による限流制御開始」という文言で示されている。 In step S106, because the current value I 1 M detected by the first current sensor 14 is greater than the second threshold value but less than the first threshold value, the control unit 16 switches the semiconductor module 12 to start current-limiting control of the fault current. The reason for starting current-limiting control is that, because the current value I 1 M is greater than the second threshold value, some kind of fault or overcurrent has occurred, but because the current value I 1 M is less than the first threshold value, current-limiting control is possible in the semiconductor module 12, and by limiting the current, it is possible to interrupt the current at the multiple switches 21-2N on the load side. In Figure 3, the operation of step S106 is indicated by the phrase "start current-limiting control by semiconductor elements."

 図4は、実施の形態1に係る半導体遮断器の選択協調システム100の動作を説明するための説明図である。図4の例では、タイミングt0で、電源が投入されて電流が流れ始めるが、負荷41の分岐回路で短絡事故が発生しているため、負荷41に流れる電流が上昇し、全体を流れる電流も上昇している。タイミングt1で、制御部16が事故電流を検出し、半導体遮断器1が限流制御を開始して電流の上昇を抑制している。 FIG. 4 is an explanatory diagram illustrating the operation of the semiconductor circuit breaker selective coordination system 100 according to embodiment 1. In the example of FIG. 4, at timing t0, power is turned on and current begins to flow, but because a short-circuit fault has occurred in the branch circuit of load 41, the current flowing through load 41 increases, causing the overall current to also increase. At timing t1, the control unit 16 detects the fault current, and the semiconductor circuit breaker 1 begins current-limiting control to suppress the increase in current.

 次のステップS107では、制御部16は、ステップS102で計測された複数の第2の電流センサ31~3Nが検知した複数の電流値ISW1~ISWNについて、第2の電流センサ31が検知した電流値ISW1から順番に基準値I基準より大きいかどうかを判定する。計測された複数の電流値ISW1~ISWNが基準値I基準より大きいと制御部16が判定した場合(S107でYes)、動作はステップS109に進む。計測された複数の電流値ISW1~ISWNが基準値I基準以下であると制御部16が判定した場合(S107でNo)、動作はステップS108に進み、次の分岐回路の電流値ISW1の判定を行うために再度ステップS107に進み、ステップS107においてISW1~ISWNが基準値I基準より大きいと判断されるまでこの動作を繰り返す。 In the next step S107, the control unit 16 determines whether the current values I SW1 to I SWN detected by the second current sensors 31 to 3N measured in step S102 are greater than the reference value I reference, starting with the current value I SW1 detected by the second current sensor 31. If the control unit 16 determines that the measured current values I SW1 to I SWN are greater than the reference value I reference (Yes in S107), the operation proceeds to step S109. If the control unit 16 determines that the measured current values I SW1 to I SWN are equal to or less than the reference value I reference (No in S107), the operation proceeds to step S108, and then to step S107 again to determine the current value I SW1 of the next branch circuit. This operation is repeated until it is determined in step S107 that I SW1 to I SWN are greater than the reference value I reference .

 ステップS109では、制御部16は、複数の第2の電流センサ31~3Nが検知した各電流値をもとに、どの分岐回路で過大電流が流れたかを特定する。図3では、ステップS109の動作は、「分岐回路の事故箇所特定」という文言で示されている。次のステップS110では、制御部16は、分岐回路である複数の開閉器21~2Nの中から、ステップS109で特定した分岐回路の開閉器に対し、接点を開とする指令を出力する。このとき、半導体モジュール12により事故電流が限流されているので、複数の開閉器21~2Nは電流を遮断することが可能である。図3では、ステップS110の動作は、「事故を検出した分岐回路の開閉器を開」という文言で示されている。 In step S109, the control unit 16 identifies which branch circuit an excessive current has flowed in, based on the current values detected by the multiple second current sensors 31-3N. In Figure 3, the operation of step S109 is indicated by the phrase "identify the fault location in the branch circuit." In the next step S110, the control unit 16 outputs a command to open the contacts to the switch of the branch circuit identified in step S109 from among the multiple switches 21-2N that make up the branch circuits. At this time, the semiconductor module 12 has limited the fault current, so the multiple switches 21-2N are able to interrupt the current. In Figure 3, the operation of step S110 is indicated by the phrase "open the switch of the branch circuit in which the fault was detected."

 さらに、その後のステップS111では、制御部16は、ステップS110で事故が発生した分岐の開閉器を開としたので、半導体モジュール12による限流制御を停止し、半導体モジュール12をオンとする。図3では、ステップS111の動作は、「半導体素子の限流制御を停止し半導体素子ON」という文言で示されている。ステップS111に関連する動作を、図4を用いて更に説明する。図4のタイミングt2で開閉器が開となり負荷41に流れる電流は遮断され、その後、制御部16は、半導体モジュール12による限流制御を停止し、半導体モジュール12がオンとなったので、負荷42の電流はそのまま継続して流れている。 Furthermore, in the subsequent step S111, since the control unit 16 opened the switch of the branch where the fault occurred in step S110, it stops the current-limiting control by the semiconductor module 12 and turns on the semiconductor module 12. In Figure 3, the operation of step S111 is indicated by the phrase "Stop current-limiting control of semiconductor element and turn semiconductor element ON." The operation related to step S111 will be further explained using Figure 4. At timing t2 in Figure 4, the switch is opened and the current flowing to the load 41 is interrupted, and thereafter the control unit 16 stops the current-limiting control by the semiconductor module 12 and the semiconductor module 12 is turned on, so the current in the load 42 continues to flow.

 実施の形態1に係る半導体遮断器の選択協調システム100は、半導体モジュール12により電路2の開閉を行う半導体遮断器1と、半導体遮断器1に流れる電流を計測する第1の電流センサ14と、半導体遮断器1の負荷側に接続されていて開閉接点を有する複数の開閉器21~2Nと、複数の開閉器21~2Nの各々に流れる電流を計測する複数の第2の電流センサ31~3Nと、電流計測部15が事故電流を検出すると半導体モジュール12に限流制御を行わせ、複数の第2の電流センサ31~3Nが計測した電流値をもとに、複数の開閉器21~2Nの中から事故電流が流れた開閉器を判定し、限流制御が行われた後に、事故電流が流れたと判定した開閉器に開動作させる制御部16とを有する。そのため、半導体遮断器の選択協調システム100は、分岐回路に開閉器を使用することができ、受配電盤をシンプルかつ安価に構成することができる。電流計測部15ではなく第1の電流センサ14が事故電流を検出してもよい。複数の開閉器21~2Nの各々は、開閉接点ではなく半導体素子を有していてもよい。 The semiconductor circuit breaker selective coordination system 100 of embodiment 1 includes a semiconductor circuit breaker 1 that opens and closes an electric circuit 2 using a semiconductor module 12; a first current sensor 14 that measures the current flowing through the semiconductor circuit breaker 1; multiple switches 21-2N connected to the load side of the semiconductor circuit breaker 1 and having open/close contacts; multiple second current sensors 31-3N that measure the current flowing through each of the multiple switches 21-2N; and a control unit 16 that, when a current measurement unit 15 detects a fault current, causes the semiconductor module 12 to perform current limiting control, determines which of the multiple switches 21-2N has the fault current flowing through it based on the current values measured by the multiple second current sensors 31-3N, and, after the current limiting control has been performed, opens the switch determined to have the fault current flowing through it. Therefore, the semiconductor circuit breaker selective coordination system 100 can use switches in branch circuits, allowing for a simple and inexpensive distribution panel configuration. The first current sensor 14, rather than the current measurement unit 15, may detect the fault current. Each of the multiple switches 21-2N may have a semiconductor element instead of a switching contact.

 また、限流制御が常に行われるのではなく、限流制御が難しいと判断した場合に半導体遮断器1が遮断を直ちに行うので、半導体遮断器の選択協調システム100の全体としての信頼性が高い。 Furthermore, current limiting control is not always performed, but rather the semiconductor circuit breaker 1 immediately performs an interruption if it determines that current limiting control is difficult, so the reliability of the semiconductor circuit breaker selection coordination system 100 as a whole is high.

 複数の開閉器21~2Nの各々は、遮断容量が低い遮断器である。 Each of the multiple switches 21-2N has a low breaking capacity.

実施の形態2.
 図5は、実施の形態2に係る半導体遮断器の選択協調システム101の構成を示す図である。実施の形態2では、半導体遮断器1Aは、負荷41~4Nにおける負荷特性、例えば、突入電流の大きさに対応する閾値を分岐回路ごとに設定する負荷特性設定部17を有する。更に言うと、負荷特性設定部17は、複数の開閉器21~2Nの負荷側に接続されている各負荷41~4Nの特性を制御部16に入力する機能を有する。負荷特性設定部17以外の構成については、半導体遮断器の選択協調システム101の構成は、実施の形態1に係る半導体遮断器の選択協調システム100の構成と同じである。そのため、半導体遮断器の選択協調システム101が有するすべての構成要素のうちの負荷特性設定部17以外の構成要素の詳細な説明は省略する。なお、制御部16は、特性をもとに事故電流を検出する。
Embodiment 2.
FIG. 5 is a diagram illustrating the configuration of a semiconductor circuit breaker selective coordination system 101 according to a second embodiment. In the second embodiment, the semiconductor circuit breaker 1A includes a load characteristic setting unit 17 that sets the load characteristics of the loads 41 to 4N, for example, a threshold value corresponding to the magnitude of the inrush current, for each branch circuit. Furthermore, the load characteristic setting unit 17 has a function of inputting the characteristics of each of the loads 41 to 4N connected to the load sides of the multiple switches 21 to 2N to the control unit 16. With the exception of the load characteristic setting unit 17, the configuration of the semiconductor circuit breaker selective coordination system 101 is the same as the configuration of the semiconductor circuit breaker selective coordination system 100 according to the first embodiment. Therefore, detailed descriptions of the components of the semiconductor circuit breaker selective coordination system 101, other than the load characteristic setting unit 17, are omitted. The control unit 16 detects a fault current based on the characteristics.

 次に、実施の形態2に係る半導体遮断器の選択協調システム101の動作を図6に示されるフローチャートをもとに説明する。図6は、実施の形態2に係る半導体遮断器の選択協調システム101が有する半導体遮断器1Aが行う動作の手順を示すフローチャートである。図6は、半導体遮断器1Aが有する制御部16が行う動作の手順を主に示している。ステップS201~ステップS206及びステップS212は、実施の形態1におけるステップS101~ステップS106及びステップS111と同じなので、ステップS201~ステップS206及びステップS212についての詳細な説明は省略する。 Next, the operation of the semiconductor circuit breaker selection coordination system 101 according to the second embodiment will be described with reference to the flowchart shown in Figure 6. Figure 6 is a flowchart showing the procedure of operations performed by the semiconductor circuit breaker 1A included in the semiconductor circuit breaker selection coordination system 101 according to the second embodiment. Figure 6 mainly shows the procedure of operations performed by the control unit 16 included in the semiconductor circuit breaker 1A. Steps S201 to S206 and step S212 are the same as steps S101 to S106 and step S111 in the first embodiment, and therefore detailed explanations of steps S201 to S206 and step S212 will be omitted.

 ステップS206で限流制御が開始した後のステップS207では、制御部16は、開閉器21に接続された分岐回路から順番に、負荷特性設定部17で設定された分岐回路ごとの電流の閾値I基準Nを設定する。 In step S207 after the current limiting control is started in step S206, the control unit 16 sets the current threshold I reference N for each branch circuit set by the load characteristic setting unit 17, starting from the branch circuit connected to the switch 21.

 次のステップS208では、制御部16は、設定された分岐回路における第2の電流センサが検知した電流値ISWNが閾値I基準Nより大きいか否かを判断する。制御部16は、電流値ISWNが閾値I基準Nより大きいと判断した場合(S208でYes)、その電流値ISWNに対応する分岐回路が事故の分岐回路であると判断し、動作はステップS210に進む。制御部16は、電流値ISWNが閾値I基準N以下であると判断した場合(S208でNo)、その電流値ISWNに対応する分岐回路は事故の分岐回路ではないと判断し、次の分岐回路の判定を行うため、動作はステップS209に進む。 In the next step S208, the control unit 16 determines whether the current value I SW N detected by the second current sensor in the set branch circuit is greater than the threshold value I Reference N. If the control unit 16 determines that the current value I SW N is greater than the threshold value I Reference N (Yes in S208), it determines that the branch circuit corresponding to that current value I SW N is the faulty branch circuit, and the operation proceeds to step S210. If the control unit 16 determines that the current value I SW N is equal to or less than the threshold value I Reference N (No in S208), it determines that the branch circuit corresponding to that current value I SW N is not the faulty branch circuit, and the operation proceeds to step S209 to determine the next branch circuit.

 ステップS209では、制御部16は、ステップS207及びステップS208で次に処理する分岐回路として次の分岐回路を指定し、動作はステップS207に戻る。これにより、ステップS208で電流値ISWNが閾値I基準Nより大きい分岐回路が見つかるまで、ステップS207からステップS209までの動作が繰り返される。図6では、ステップS209の動作は、「判定対象を次の分岐回路に設定」という文言で示されている。 In step S209, the control unit 16 designates the next branch circuit as the branch circuit to be processed next in steps S207 and S208, and the operation returns to step S207. As a result, the operations from step S207 to step S209 are repeated until a branch circuit whose current value I SW N is greater than the threshold value I reference N is found in step S208. In Fig. 6, the operation of step S209 is indicated by the phrase "set the next branch circuit to be judged."

 電流値ISWNが閾値I基準Nより大きい分岐回路が見つかったステップS210では、制御部16は、その分岐回路を事故回路と特定する。図6では、ステップS210の動作は、「分岐回路の事故箇所特定」という文言で示されている。 In step S210, when a branch circuit having a current value I SW N greater than the threshold value I reference N is found, the control unit 16 identifies the branch circuit as the fault circuit. In Fig. 6, the operation of step S210 is indicated by the phrase "identify the fault location of the branch circuit."

 次のステップS211では、制御部16は、ステップS210で特定した分岐回路の開閉器を開とする指令を出し、動作は次のステップS212に進む。図6では、ステップS211の動作は、「事故を検出した分岐回路の開閉器を開」という文言で示されている。 In the next step S211, the control unit 16 issues a command to open the switch of the branch circuit identified in step S210, and operation proceeds to the next step S212. In Figure 6, the operation of step S211 is indicated by the phrase "Open the switch of the branch circuit in which the fault was detected."

 実施の形態2によれば、半導体遮断器1Aは、複数の負荷41~4Nにおける負荷特性、例えば、突入電流の大きさに対応する閾値を分岐回路ごとに設定する負荷特性設定部17を有し、負荷特性、例えば、突入電流の大きさに対応する閾値を分岐回路ごとに設定することができる。半導体遮断器1Aは、負荷側の複数の開閉器21~2Nの開指令を出力するので、突入電流等を検知して複数の開閉器21~2Nの開指令を出すことを抑制することができる。 According to embodiment 2, the semiconductor circuit breaker 1A has a load characteristic setting unit 17 that sets the load characteristics of the multiple loads 41-4N, for example, a threshold value corresponding to the magnitude of the inrush current, for each branch circuit, and can set the load characteristics, for example, a threshold value corresponding to the magnitude of the inrush current, for each branch circuit. Because the semiconductor circuit breaker 1A outputs an opening command to the multiple load-side switches 21-2N, it can detect inrush currents, etc., and suppress the issuance of opening commands to the multiple switches 21-2N.

実施の形態3.
 図7は、実施の形態3に係る半導体遮断器の選択協調システム102の構成を示す図である。半導体遮断器の選択協調システム102は、実施の形態1に係る半導体遮断器の選択協調システム100が有する複数の第2の電流センサ31~3Nを有していない。実施の形態3では、半導体遮断器1Bは、複数の開閉器21~2Nの負荷側に接続されている各負荷41~4Nの特性として、複数の開閉器21~2Nと各負荷41~4Nとを接続する電線のインダクタンスを設定するための電線特性設定部18を有する。半導体遮断器1Bの電線特性設定部18以外の構成は、実施の形態1の半導体遮断器1の構成と同じである。図7には、複数の抵抗51~5Nと複数のインダクタ61~6Nとが示されている。対応する抵抗とインダクタとは電線の電気的な構成を模式的に示している。
Embodiment 3.
FIG. 7 is a diagram showing the configuration of a semiconductor circuit breaker selective coordination system 102 according to a third embodiment. The semiconductor circuit breaker selective coordination system 102 does not include the multiple second current sensors 31-3N included in the semiconductor circuit breaker selective coordination system 100 according to the first embodiment. In the third embodiment, the semiconductor circuit breaker 1B includes a wire characteristic setting unit 18 for setting the inductance of the wires connecting the multiple switches 21-2N to each of the loads 41-4N as the characteristics of each of the loads 41-4N connected to the load sides of the multiple switches 21-2N. The configuration of the semiconductor circuit breaker 1B, other than the wire characteristic setting unit 18, is the same as that of the semiconductor circuit breaker 1 according to the first embodiment. FIG. 7 shows multiple resistors 51-5N and multiple inductors 61-6N. The corresponding resistors and inductors schematically represent the electrical configuration of the wires.

 図8は、図7に示される各分岐回路の電流を電線仕様から推定する方法を説明するため半導体遮断器1Bが動作した際における電気回路の状態を示す図である。図8に示されるように、半導体遮断器1Bが動作した際、半導体遮断器1Bの両端に電圧Vが印加されている。制御部16は、電圧Vを計測する。電気回路11の電源電圧Eもリアルタイムに計測され、電源電圧Eの値も制御部16へ入力される。各分岐回路を流れる電流の値である電流値Iは、半導体遮断器1Bの第1の電流センサ14によって計測される。電流値Iは、制御部16へ入力される。図8において、半導体遮断器1Bは「SSCB1B」として示されており、「I,I,I,・・・,I」は対応する電線を流れる電流を意味する。 FIG. 8 is a diagram showing the state of the electric circuit when semiconductor circuit breaker 1B operates, in order to explain a method for estimating the current of each branch circuit shown in FIG. 7 from the electric wire specifications. As shown in FIG. 8, when semiconductor circuit breaker 1B operates, voltage V is applied across semiconductor circuit breaker 1B. Control unit 16 measures voltage V. Power supply voltage E of electric circuit 11 is also measured in real time, and the value of power supply voltage E is also input to control unit 16. Current value I 1 M , which is the value of the current flowing through each branch circuit, is measured by first current sensor 14 of semiconductor circuit breaker 1B. Current value I 1 M is input to control unit 16. In FIG. 8, semiconductor circuit breaker 1B is shown as "SSCB1B," and "I, I 1 , I 2 , ..., I N " represent the currents flowing through the corresponding electric wires.

 図8より電気回路の方程式は、次の式(1)により表される。
  ΣL(dI/dt)=E-V-ΣR  ・・・(1)
 事故を起こしていない分岐回路のdI/dtは無視することができると仮定して式(1)を変形すると、事故が発生した分岐回路のインダクタンスL事故は、次の式(2)により表される。
  L事故=(E-V-ΣR)/(dI/dt)  ・・・(2)
From FIG. 8, the equation of the electric circuit is expressed by the following formula (1).
ΣL N (dI N /dt)=EV-ΣR N I N ...(1)
If we transform equation (1) assuming that the dI/dt of a branch circuit that is not experiencing a fault can be ignored, the inductance L of the branch circuit that has experienced a fault can be expressed by the following equation (2).
L accident = (EV-ΣR N I N )/(dI/dt) ... (2)

 また、半導体モジュール12により電流は限流されているので、抵抗値によるΣRも無視することができるとすると、インダクタンスL事故は、次の式(3)により表される。
  L事故=(E-V)/(dI/dt)  ・・・(3)
 式(3)に計測された電源電圧E、電圧V及びdI/dtの各値を入力することでインダクタンスL事故が算出される。
Furthermore, since the current is limited by the semiconductor module 12, if it is assumed that ΣR N I N due to the resistance value can also be ignored, the inductance L fault can be expressed by the following equation (3).
L accident = (EV)/(dI/dt)...(3)
The inductance L fault is calculated by inputting the measured values of the power supply voltage E, the voltage V, and dI/dt into equation (3).

 他方、電線特性設定部18が各負荷に接続された電線の電線径、電線の導体中心距離及び電線長を設定することで、各分岐回路のインダクタンスLは演算することができる。ここでの事故は負荷側での短絡事故を想定しているので、導体中心距離とは、短絡事故が発生した回路における電流の行きと帰りを構成している電線の導体の中心間の距離を示す。 On the other hand, the inductance LN of each branch circuit can be calculated by setting the wire diameter, conductor center distance, and wire length of the wires connected to each load using the wire characteristics setting unit 18. Since the fault here is assumed to be a short circuit fault on the load side, the conductor center distance refers to the distance between the centers of the conductors of the wires that make up the sending and returning current in the circuit where the short circuit fault occurred.

 よって、制御部16は、電線特性設定部18が設定した各開閉器に接続された電線の電線径、電線の導体中心距離及び電線長から算出された各分岐回路のインダクタンスLの中から、式(3)から算出されたインダクタンスL事故に一番近いインダクタンスを選び、そのインダクタンスに対応する分岐回路が事故回路であると推定し、その回路の開閉器をオフとする。 Therefore, the control unit 16 selects the inductance L closest to the inductance L fault calculated from the formula (3) from the inductances L N of each branch circuit calculated from the wire diameter, conductor center distance, and wire length of the wires connected to each switch set by the wire characteristics setting unit 18, estimates that the branch circuit corresponding to that inductance is the fault circuit, and turns off the switch of that circuit.

 なお、各分岐回路のインダクタンスLについては、上述のように各負荷に接続された電線の電線径、導体中心距離及び電線長から演算する方法の他に、電線の種類及び電線長から予め計算されたインダクタンスが電線特性設定部18に直接入力されてもよいし、電線便覧等に記載されている電線種別ごとの単位長さ当たりのインダクタンスを電線特性設定部18に記憶させておき、電線種別と電線長とを入力することで、算出するようにしてもよい。上記の単位長さ当たりのインダクタンスの単位はmH/kmであり、当該インダクタンスの値は例えば、0.1~0.3mH/kmである。 In addition to the method of calculating the inductance LN of each branch circuit from the wire diameter, conductor center distance, and wire length of the wire connected to each load as described above, an inductance calculated in advance from the type and length of the wire may be directly input to the wire characteristics setting unit 18, or the inductance per unit length for each type of wire listed in an electric wire handbook or the like may be stored in the wire characteristics setting unit 18, and the inductance may be calculated by inputting the type and length of the wire. The unit of the inductance per unit length is mH/km, and the value of the inductance is, for example, 0.1 to 0.3 mH/km.

 制御部16は、開閉器をオフとした後、再度、第1の電流センサ14で計測されたdI/dtより、事故電流が遮断されたかどうかを判定する。制御部16は、事故電流が遮断されていないと判断した場合、式(3)で求めたインダクタンスL事故に2番目に近いインダクタンスを選定し、選定したインダクタンスに対応する回路の開閉器をオフとする。制御部16は、再度、第1の電流センサ14で計測されたdI/dtより、事故電流が遮断されたかどうかを判定する。制御部16は、上述の動作を繰り返すことで、事故回路の遮断を行う。 After turning off the switch, the control unit 16 again determines whether the fault current has been interrupted based on the dI/dt measured by the first current sensor 14. If the control unit 16 determines that the fault current has not been interrupted, it selects the inductance that is second closest to the inductance L calculated by equation (3) and turns off the switch of the circuit corresponding to the selected inductance. The control unit 16 again determines whether the fault current has been interrupted based on the dI/dt measured by the first current sensor 14. The control unit 16 repeats the above operation to interrupt the fault circuit.

 次に、半導体遮断器の選択協調システム102の動作を図9に示されるフローチャートをもとに説明する。図9は、実施の形態3に係る半導体遮断器の選択協調システム102が有する半導体遮断器1Bが行う動作の手順を示すフローチャートである。図9は、半導体遮断器1Bが有する制御部16が行う動作の手順を主に示している。ステップS301では、制御部16は、電線特性設定部18で設定された各負荷に接続された電線の電線径及び電線長などから、各分岐回路における電線のインダクタンスL~Lを計算する。すなわち、ステップS301では、制御部16は、電線仕様から各分岐回路のインダクタンスを計算する。 Next, the operation of the semiconductor circuit breaker selection coordination system 102 will be described with reference to the flowchart shown in Fig. 9. Fig. 9 is a flowchart showing the procedure of the operation performed by the semiconductor circuit breaker 1B included in the semiconductor circuit breaker selection coordination system 102 according to the third embodiment. Fig. 9 mainly shows the procedure of the operation performed by the control unit 16 included in the semiconductor circuit breaker 1B. In step S301, the control unit 16 calculates the inductances L1 to LN of the wires in each branch circuit from the wire diameter, wire length, etc. of the wires connected to each load set by the wire characteristics setting unit 18. That is, in step S301, the control unit 16 calculates the inductance of each branch circuit from the wire specifications.

 ステップS302~ステップS307は、実施の形態1におけるステップS101、ステップS103~ステップS106及びステップS111と同様なので、ステップS302~ステップS307の詳細な説明は省略する。 Steps S302 to S307 are similar to steps S101, S103 to S106, and S111 in embodiment 1, so detailed explanations of steps S302 to S307 will be omitted.

 制御部16は、第1の電流センサ14で計測された電流値Iが第1の閾値より大きい場合(S303でYes)、半導体モジュール12をオフし、電流値Iが第1の閾値以下で、第2の閾値より大きい場合(S303でNo,S305でYes)、ステップS306で限流制御が開始した後、事故分岐回路のインダクタンス推定処理300を行う。 If the current value I M measured by the first current sensor 14 is greater than the first threshold value (Yes in S303), the control unit 16 turns off the semiconductor module 12, and if the current value I M is equal to or less than the first threshold value and greater than the second threshold value (No in S303, Yes in S305), the control unit 16 starts current limiting control in step S306 and then performs inductance estimation processing 300 for the fault branch circuit.

 事故分岐回路のインダクタンス推定処理300については、図10を用いて説明する。図10は、図9の事故分岐回路のインダクタンス推定処理300の動作の手順を示すフローチャートである。ステップS311では、制御部16は、式(3)をもとに、事故が発生した分岐回路のインダクタンスL事故を算出する。 The fault branch circuit inductance estimation process 300 will be described with reference to Fig. 10. Fig. 10 is a flowchart showing the procedure of the operation of the fault branch circuit inductance estimation process 300 in Fig. 9. In step S311, the control unit 16 calculates the inductance L fault of the branch circuit where the fault occurred based on equation (3).

 ステップS312では、制御部16は、ステップS301で算出した各分岐回路における電線のインダクタンスL~Lの中から、ステップS311で算出したインダクタンスL事故に最も近い値のインダクタンスを抽出する。図10では、ステップ312の動作は「L事故に近いL選定」という文言で示されている。 In step S312, the control unit 16 extracts an inductance closest to the inductance L fault calculated in step S311 from the inductances L 1 to L N of the electric wires in each branch circuit calculated in step S301. In Fig. 10, the operation of step 312 is indicated by the phrase "selection of L N closest to L fault ."

 ステップS313では、制御部16は、ステップS312で抽出したインダクタンスの分岐回路における開閉器を開にする。図10では、ステップ313の動作は「選定されたLにおける分岐回路の開閉器を開」という文言で示されている。ステップS314では、開とした開閉器が本当に事故を起こした分岐回路かどうかを確認するために、制御部16は、図11に示される電流波形をもとに、半導体モジュール12がオンの時のdI/dtを計測する。図11は、実施の形態3に係る半導体遮断器の選択協調システム102が有する半導体遮断器1Bが限流動作を行っている際の電流波形を示す図であり、図11におけるt2とt1の差分であるΔtがdI/dtのdtを意味し、c1とc2の差分がdIを意味する。 In step S313, the control unit 16 opens the switch in the branch circuit of the inductance extracted in step S312. In FIG. 10, the operation of step S313 is indicated by the phrase "open the switch of the branch circuit at the selected L N. " In step S314, to confirm whether the opened switch is actually the branch circuit where the fault occurred, the control unit 16 measures dI/dt when the semiconductor module 12 is on, based on the current waveform shown in FIG. 11. FIG. 11 is a diagram showing a current waveform when the semiconductor circuit breaker 1B included in the semiconductor circuit breaker selection coordination system 102 according to the third embodiment is performing a current limiting operation. In FIG. 11, Δt, which is the difference between t2 and t1, represents dt in dI/dt, and the difference between c1 and c2 represents dI.

 ステップS315では、制御部16は、ステップS314で計測したdI/dtが第3の閾値より小さいかどうかを判定する。dI/dtが第3の閾値より小さいと制御部16によって判定された場合(S315でYes)、ステップS313で開閉器を開としたことで、事故回路が遮断されたと判断することができるため、事故分岐回路のインダクタンス推定処理300は終了する。動作は、図9のステップS307に進む。 In step S315, the control unit 16 determines whether the dI/dt measured in step S314 is smaller than the third threshold value. If the control unit 16 determines that the dI/dt is smaller than the third threshold value (Yes in S315), it can be determined that the fault circuit has been disconnected by opening the switch in step S313, and the fault branch circuit inductance estimation process 300 ends. Operation proceeds to step S307 in Figure 9.

 他方、dI/dtが第3の閾値以上であると制御部16によって判定された場合(S315でNo)、ステップS313で開閉器を開としたが、事故回路が遮断されていないと判断されるので、動作はステップS316に進む。ステップS316において、制御部16は、ステップS313で開とした開閉器を再度、閉とする。図10では、ステップ316の動作は「Lにおける分岐回路の開閉器を閉」という文言で示されている。 On the other hand, if the control unit 16 determines that dI/dt is equal to or greater than the third threshold (No in S315), it is determined that the fault circuit has not been interrupted even though the switch was opened in step S313, and the operation proceeds to step S316. In step S316, the control unit 16 closes the switch that was opened in step S313 again. In FIG. 10, the operation of step 316 is indicated by the phrase "close the switch of the branch circuit at L N. "

 ステップS317では、制御部16は、後続のステップであるステップS312でインダクタンスL事故に最も近い値のインダクタンスを抽出する前に、ステップS301で算出した各分岐回路における電線のインダクタンスL~Lの中からステップS313で開閉器を開とした分岐回路のインダクタンスを選定対象から除外する。図10では、ステップ317の動作は「選定したLを選定対象から除外」という文言で示されている。動作はステップS317からステップS312に戻り、制御部16は、ステップS312からステップS315までの動作を行う。 In step S317, the control unit 16 excludes from the selection candidates the inductance of the branch circuit whose switch was opened in step S313 from among the wire inductances L1 to LN in each branch circuit calculated in step S301, before extracting the inductance closest to the inductance L fault in the subsequent step S312. In FIG. 10, the operation of step S317 is indicated by the phrase "exclude selected LN from selection candidates." The operation returns from step S317 to step S312, and the control unit 16 performs the operations from step S312 to step S315.

 実施の形態3に係る半導体遮断器の選択協調システム102は、半導体モジュール12により電路2の開閉を行う半導体遮断器1Bと、半導体遮断器1Bに流れる電流を計測する第1の電流センサ14と、半導体遮断器1Bの負荷側に接続されていて開閉接点を有する複数の開閉器21~2Nと、複数の開閉器21~2Nの負荷側に接続されている各負荷41~4Nの特性として複数の開閉器21~2Nと各負荷41~4Nとを接続する電線の電線径と電線長とを当該電線の特性として設定する電線特性設定部18と、第1の電流センサ14が事故電流を検出すると半導体モジュール12に限流制御を行わせ、事故電流、電線径及び電線長をもとに複数の開閉器21~2Nの中から事故電流が流れた開閉器を選定し、限流制御が行われた後に当該開閉器に開動作させる制御部16とを有する。そのため、分岐回路に開閉器を使用することができ、受配電盤をシンプル、かつ安価に構成することができる。 The semiconductor circuit breaker selection and coordination system 102 according to the third embodiment includes a semiconductor circuit breaker 1B that opens and closes the electric circuit 2 using a semiconductor module 12; a first current sensor 14 that measures the current flowing through the semiconductor circuit breaker 1B; multiple switches 21-2N that are connected to the load side of the semiconductor circuit breaker 1B and have open/close contacts; a wire characteristic setting unit 18 that sets the wire diameter and wire length of the wire connecting the multiple switches 21-2N to each load 41-4N as characteristics of the respective loads 41-4N connected to the load side of the multiple switches 21-2N; and a control unit 16 that, when the first current sensor 14 detects a fault current, causes the semiconductor module 12 to perform current limiting control, selects a switch from the multiple switches 21-2N through which the fault current flows based on the fault current, wire diameter, and wire length, and opens the selected switch after the current limiting control has been performed. This allows switches to be used in branch circuits, resulting in a simple and inexpensive distribution panel.

 また、半導体遮断器の選択協調システム102は、複数の開閉器21~2Nごとの電流を計測する電流センサを有しなくても事故が発生した分岐回路を特定することができるので、受配電盤をシンプル、かつ安価に構成することができる。 Furthermore, the semiconductor circuit breaker selection and coordination system 102 can identify the branch circuit in which the fault occurred without requiring a current sensor to measure the current for each of the multiple switches 21-2N, allowing for a simple and inexpensive configuration of the distribution panel.

 また、事故分岐回路のインダクタンス推定処理300により選定された分岐回路が事故回路でない場合でも、半導体遮断器の選択協調システム102は、開閉器を開とした後、半導体モジュール12がオンの時のdI/dtを計測し、選定された分岐回路が本当に事故を起こした分岐回路であったかの確認を行い、間違っていた場合、次の分岐回路を選定し、再度、半導体モジュール12がオンの時のdI/dtによる確認を行うので、確実に事故回路の遮断を行うことができる。 Furthermore, even if the branch circuit selected by the fault branch circuit inductance estimation process 300 is not the fault circuit, the semiconductor circuit breaker selection coordination system 102 opens the switch, measures dI/dt when the semiconductor module 12 is on, and confirms whether the selected branch circuit was actually the branch circuit that caused the fault. If it is incorrect, it selects the next branch circuit and again checks dI/dt when the semiconductor module 12 is on, thereby ensuring that the fault circuit is shut off.

 図12は、実施の形態1に係る半導体遮断器の選択協調システム100が有する電流計測部15及び制御部16の一部又は全部の機能がプロセッサ91によって実現される場合のプロセッサ91を示す図である。つまり、電流計測部15及び制御部16の一部又は全部の機能は、メモリ92に格納されるプログラムを実行するプロセッサ91によって実現されてもよい。プロセッサ91は、CPU(Central Processing Unit)、処理システム、演算システム、マイクロプロセッサ又はDSP(Digital Signal Processor)である。図12には、メモリ92も示されている。 FIG. 12 is a diagram showing a processor 91 in the case where some or all of the functions of the current measurement unit 15 and control unit 16 of the semiconductor circuit breaker selection coordination system 100 according to embodiment 1 are realized by the processor 91. In other words, some or all of the functions of the current measurement unit 15 and control unit 16 may be realized by the processor 91 executing a program stored in memory 92. The processor 91 is a CPU (Central Processing Unit), processing system, arithmetic system, microprocessor, or DSP (Digital Signal Processor). Memory 92 is also shown in FIG. 12.

 電流計測部15及び制御部16の一部又は全部の機能がプロセッサ91によって実現される場合、当該一部又は全部の機能は、プロセッサ91と、ソフトウェア、ファームウェア、又は、ソフトウェアとファームウェアとの組み合わせとによって実現される。ソフトウェア又はファームウェアは、プログラムとして記述され、メモリ92に格納される。プロセッサ91は、メモリ92に記憶されたプログラムを読み出して実行することにより、電流計測部15及び制御部16の一部又は全部の機能を実現する。 When some or all of the functions of the current measurement unit 15 and control unit 16 are realized by the processor 91, those functions are realized by the processor 91 in combination with software, firmware, or a combination of software and firmware. The software or firmware is written as a program and stored in the memory 92. The processor 91 realizes some or all of the functions of the current measurement unit 15 and control unit 16 by reading and executing the program stored in the memory 92.

 電流計測部15及び制御部16の一部又は全部の機能がプロセッサ91によって実現される場合、半導体遮断器の選択協調システム100は、電流計測部15及び制御部16によって実行されるステップの一部又は全部が結果的に実行されることになるプログラムを格納するためのメモリ92を有する。メモリ92に格納されるプログラムは、電流計測部15及び制御部16が実行する手順又は方法の一部又は全部をコンピュータに実行させるものであるともいえる。 When some or all of the functions of the current measurement unit 15 and control unit 16 are implemented by the processor 91, the semiconductor circuit breaker selection coordination system 100 has a memory 92 for storing a program that results in some or all of the steps executed by the current measurement unit 15 and control unit 16. It can also be said that the program stored in the memory 92 causes a computer to execute some or all of the procedures or methods executed by the current measurement unit 15 and control unit 16.

 メモリ92は、例えば、RAM(Random Access Memory)、ROM(Read Only Memory)、フラッシュメモリ、EPROM(Erasable Programmable Read Only Memory)、EEPROM(登録商標)(Electrically Erasable Programmable Read-Only Memory)等の不揮発性若しくは揮発性の半導体メモリ、磁気ディスク、フレキシブルディスク、光ディスク、コンパクトディスク、ミニディスク又はDVD(Digital Versatile Disk)等である。 Memory 92 may be, for example, non-volatile or volatile semiconductor memory such as RAM (Random Access Memory), ROM (Read Only Memory), flash memory, EPROM (Erasable Programmable Read Only Memory), EEPROM (Electrically Erasable Programmable Read-Only Memory), a magnetic disk, a flexible disk, an optical disk, a compact disk, a mini disk, or a DVD (Digital Versatile Disk).

 図13は、実施の形態1に係る半導体遮断器の選択協調システム100が有する電流計測部15及び制御部16の一部又は全部の機能が処理回路93によって実現される場合の処理回路93を示す図である。つまり、電流計測部15及び制御部16の一部又は全部の機能は、処理回路93によって実現されてもよい。 FIG. 13 is a diagram showing the processing circuit 93 when some or all of the functions of the current measurement unit 15 and control unit 16 of the semiconductor circuit breaker selection coordination system 100 according to embodiment 1 are realized by the processing circuit 93. In other words, some or all of the functions of the current measurement unit 15 and control unit 16 may be realized by the processing circuit 93.

 処理回路93は、専用のハードウェアである。処理回路93は、例えば、単一回路、複合回路、プログラム化されたプロセッサ、並列プログラム化されたプロセッサ、ASIC(Application Specific Integrated Circuit)、FPGA(Field-Programmable Gate Array)又はこれらを組み合わせたものである。 The processing circuit 93 is dedicated hardware. The processing circuit 93 may be, for example, a single circuit, a composite circuit, a programmed processor, a parallel programmed processor, an ASIC (Application Specific Integrated Circuit), an FPGA (Field-Programmable Gate Array), or a combination of these.

 電流計測部15及び制御部16の一部の機能は、電流計測部15及び制御部16の残部の機能を実現するハードウェアと別の専用のハードウェアによって実現されてもよい。 Some of the functions of the current measurement unit 15 and the control unit 16 may be realized by dedicated hardware separate from the hardware that realizes the remaining functions of the current measurement unit 15 and the control unit 16.

 電流計測部15及び制御部16が有する複数の機能について、当該複数の機能の一部がソフトウェア又はファームウェアで実現され、当該複数の機能の残部が専用のハードウェアで実現されてもよい。このように、電流計測部15及び制御部16が有する複数の機能は、ハードウェア、ソフトウェア、ファームウェア、又はこれらの組み合わせによって実現することができる。 Some of the functions possessed by the current measurement unit 15 and the control unit 16 may be realized by software or firmware, and the remaining functions may be realized by dedicated hardware. In this way, the functions possessed by the current measurement unit 15 and the control unit 16 can be realized by hardware, software, firmware, or a combination of these.

 実施の形態2に係る半導体遮断器の選択協調システム101が有する電流計測部15、制御部16及び負荷特性設定部17の一部又は全部の機能は、プロセッサによって実現されてもよいし、処理回路によって実現されてもよい。当該プロセッサは、プロセッサ91と同様のプロセッサである。当該処理回路は、処理回路93と同様の処理回路である。 Some or all of the functions of the current measurement unit 15, control unit 16, and load characteristic setting unit 17 of the semiconductor circuit breaker selection coordination system 101 according to embodiment 2 may be implemented by a processor or a processing circuit. The processor is the same as processor 91. The processing circuit is the same as processing circuit 93.

 実施の形態3に係る半導体遮断器の選択協調システム102が有する電流計測部15、制御部16及び電線特性設定部18の一部又は全部の機能は、プロセッサによって実現されてもよいし、処理回路によって実現されてもよい。当該プロセッサは、プロセッサ91と同様のプロセッサである。当該処理回路は、処理回路93と同様の処理回路である。 Some or all of the functions of the current measurement unit 15, control unit 16, and wire characteristic setting unit 18 of the semiconductor circuit breaker selection coordination system 102 according to embodiment 3 may be implemented by a processor or a processing circuit. The processor is the same as processor 91. The processing circuit is the same as processing circuit 93.

 以上の実施の形態に示した構成は、一例を示すものであり、別の公知の技術と組み合わせることも可能であるし、実施の形態同士を組み合わせることも可能であるし、要旨を逸脱しない範囲で、構成の一部を省略又は変更することも可能である。 The configurations shown in the above embodiments are merely examples, and may be combined with other known technologies, or different embodiments may be combined with each other. Parts of the configuration may also be omitted or modified without departing from the spirit of the invention.

 1,1A,1B 半導体遮断器、2 電路、11 電気回路、12 半導体モジュール、13 機械素子、14 第1の電流センサ、15 電流計測部、16 制御部、17 負荷特性設定部、18 電線特性設定部、21~2N 開閉器、31~3N 第2の電流センサ、41~4N 負荷、51~5N 抵抗、61~6N インダクタ、91 プロセッサ、92 メモリ、93 処理回路、100,101,102 半導体遮断器の選択協調システム、121 半導体素子、122,123 端子、124 ダイオード、300 事故分岐回路のインダクタンス推定処理。 1, 1A, 1B: semiconductor circuit breaker, 2: electrical path, 11: electrical circuit, 12: semiconductor module, 13: mechanical element, 14: first current sensor, 15: current measurement unit, 16: control unit, 17: load characteristics setting unit, 18: electrical wire characteristics setting unit, 21-2N: switches, 31-3N: second current sensors, 41-4N: loads, 51-5N: resistors, 61-6N: inductors, 91: processor, 92: memory, 93: processing circuit, 100, 101, 102: semiconductor circuit breaker selection and coordination system, 121: semiconductor element, 122, 123: terminals, 124: diode, 300: inductance estimation process for faulted branch circuit.

Claims (5)

 半導体素子により電路の開閉を行う半導体遮断器と、
 前記半導体遮断器に流れる電流を計測する第1の電流センサと、
 前記半導体遮断器の負荷側に接続されている複数の開閉器と、
 前記複数の開閉器の各々に流れる電流を計測する複数の第2の電流センサと、
 前記第1の電流センサが事故電流を検出すると前記半導体素子に限流制御を行わせ、前記複数の第2の電流センサが計測した電流をもとに前記複数の開閉器の中から前記事故電流が流れた開閉器を判定し、前記限流制御が行われた後に前記開閉器に開動作させる制御部とを備え、
 前記複数の開閉器の各々は、開閉接点又は半導体素子を有する
 ことを特徴とする半導体遮断器の選択協調システム。
a semiconductor circuit breaker that opens and closes an electric circuit using a semiconductor element;
a first current sensor that measures a current flowing through the semiconductor circuit breaker;
A plurality of switches connected to the load side of the semiconductor circuit breaker;
a plurality of second current sensors that measure currents flowing through the plurality of switches;
a control unit that, when the first current sensor detects a fault current, causes the semiconductor element to perform current-limiting control, determines a switch through which the fault current has flowed from among the plurality of switches based on the currents measured by the plurality of second current sensors, and causes the switch to perform an opening operation after the current-limiting control has been performed;
A selective coordination system for semiconductor circuit breakers, characterized in that each of the plurality of switches has a switching contact or a semiconductor element.
 前記複数の開閉器の負荷側に接続されている各負荷の特性を前記制御部に入力する負荷特性設定部を更に備え、
 前記制御部は、前記特性をもとに前記事故電流を検出する
 ことを特徴とする請求項1に記載の半導体遮断器の選択協調システム。
a load characteristic setting unit that inputs characteristics of each load connected to the load side of the plurality of switches to the control unit;
The semiconductor circuit breaker selective coordination system according to claim 1 , wherein the control unit detects the fault current based on the characteristics.
 前記特性は、突入電流の大きさである
 ことを特徴とする請求項2に記載の半導体遮断器の選択協調システム。
The semiconductor circuit breaker selective coordination system according to claim 2 , wherein the characteristic is the magnitude of an inrush current.
 半導体素子により電路の開閉を行う半導体遮断器と、
 前記半導体遮断器に流れる電流を計測する第1の電流センサと、
 前記半導体遮断器の負荷側に接続されていて開閉接点を有する複数の開閉器と、
 前記複数の開閉器の負荷側に接続されている各負荷の特性として、前記複数の開閉器と前記各負荷とを接続する電線の特性を設定する電線特性設定部と、
 前記第1の電流センサが事故電流を検出すると前記半導体素子に限流制御を行わせ、前記事故電流、前記電線の径及び前記電線の長さをもとに前記複数の開閉器の中から前記事故電流が流れた開閉器を選定し、前記限流制御が行われた後に前記開閉器に開動作させる制御部と
 を備えることを特徴とする半導体遮断器の選択協調システム。
a semiconductor circuit breaker that opens and closes an electric circuit using a semiconductor element;
a first current sensor that measures a current flowing through the semiconductor circuit breaker;
a plurality of switches connected to the load side of the semiconductor circuit breaker and having switching contacts;
a wire characteristic setting unit that sets characteristics of wires connecting the plurality of switches and each of the loads as characteristics of each of the loads connected to the load sides of the plurality of switches;
a control unit that, when the first current sensor detects a fault current, causes the semiconductor element to perform current-limiting control, selects a switch through which the fault current has flowed from among the plurality of switches based on the fault current, the diameter of the electric wire, and the length of the electric wire, and causes the switch to open after the current-limiting control has been performed.
 前記複数の開閉器の各々は、遮断容量が低い遮断器である
 ことを特徴とする請求項1から4のいずれか1項に記載の半導体遮断器の選択協調システム。
The semiconductor circuit breaker selection coordination system according to any one of claims 1 to 4, wherein each of the plurality of switches is a circuit breaker with a low breaking capacity.
PCT/JP2024/007611 2024-02-29 2024-02-29 Selective cooperation system for semiconductor circuit breaker Pending WO2025182030A1 (en)

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Application Number Priority Date Filing Date Title
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04112619A (en) * 1990-09-03 1992-04-14 Hitachi Ltd Distribution line interrupting method, interrupter and using method thereof
JPH0515053A (en) * 1991-06-27 1993-01-22 Meidensha Corp Selective breaker
WO1994018736A1 (en) * 1993-02-10 1994-08-18 Masaya Maruo Overcurrent protective circuit and semiconductor device
JP2007516690A (en) * 2003-12-23 2007-06-21 エー ビー ビー リサーチ リミテッド Power network
JP2013081338A (en) * 2011-10-05 2013-05-02 Ntt Facilities Inc Dc power feeding system
US20140028094A1 (en) * 2012-07-25 2014-01-30 Hamilton Sundstrand Corporation Power management and distribution with auxiliary dc bus

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04112619A (en) * 1990-09-03 1992-04-14 Hitachi Ltd Distribution line interrupting method, interrupter and using method thereof
JPH0515053A (en) * 1991-06-27 1993-01-22 Meidensha Corp Selective breaker
WO1994018736A1 (en) * 1993-02-10 1994-08-18 Masaya Maruo Overcurrent protective circuit and semiconductor device
JP2007516690A (en) * 2003-12-23 2007-06-21 エー ビー ビー リサーチ リミテッド Power network
JP2013081338A (en) * 2011-10-05 2013-05-02 Ntt Facilities Inc Dc power feeding system
US20140028094A1 (en) * 2012-07-25 2014-01-30 Hamilton Sundstrand Corporation Power management and distribution with auxiliary dc bus

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