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WO2025181009A1 - Composant optoélectronique - Google Patents

Composant optoélectronique

Info

Publication number
WO2025181009A1
WO2025181009A1 PCT/EP2025/054857 EP2025054857W WO2025181009A1 WO 2025181009 A1 WO2025181009 A1 WO 2025181009A1 EP 2025054857 W EP2025054857 W EP 2025054857W WO 2025181009 A1 WO2025181009 A1 WO 2025181009A1
Authority
WO
WIPO (PCT)
Prior art keywords
optoelectronic
radiation
optoelectronic component
semiconductor chip
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/EP2025/054857
Other languages
German (de)
English (en)
Inventor
Simon Jerebic
Michael Wittmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Ams Osram International GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ams Osram International GmbH filed Critical Ams Osram International GmbH
Publication of WO2025181009A1 publication Critical patent/WO2025181009A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Definitions

  • the present invention relates to an optoelectronic component.
  • LEDs light-emitting diodes
  • LEDs which use a phosphor to convert the wavelength of the originally emitted electromagnetic radiation, appear yellowish or white when switched off, or at least relatively bright.
  • the lowest possible visibility when switched off is required.
  • An object of the present invention is to provide an improved optoelectronic component. This object is achieved by an optoelectronic component having the features of the independent claim. Advantageous further developments are specified in the dependent claims.
  • An optoelectronic component comprises an optoelectronic arrangement with a housing and an optoelectronic semiconductor chip embedded in the housing.
  • the optoelectronic semiconductor chip is designed to emit electromagnetic radiation. At least a first radiation emission surface of the optoelectronic semiconductor
  • the chips are not covered by any of the casing's materials.
  • the casing is at least partially black.
  • the optoelectronic semiconductor chip can be designed, for example, as a light-emitting diode.
  • the optoelectronic semiconductor chip has a top side, a bottom side opposite the top side, and side surfaces, and is designed to emit electromagnetic radiation at the top side and at the side surfaces.
  • the top side forms the first radiation-emitting surface, while the side surfaces form second radiation-emitting surfaces.
  • Laterally directed emission leads to reduced contrast in components according to the prior art. This problem particularly affects small light-emitting diodes, which can be referred to as mini- or micro-LEDs.
  • the optoelectronic component is to embed the semiconductor chip in the black housing.
  • the fact that the housing is black means that the housing material is essentially absorbent in the visible spectrum of electromagnetic radiation.
  • the housing comprises a plastic, such as silicone.
  • absorbing particles, such as carbon can be embedded in the plastic.
  • the housing material can also be blackened in another way.
  • the optoelectronic semiconductor chip is embedded in the housing in such a way that only its side surfaces are covered by the housing material. The top side, however, is uncovered.
  • the optoelectronic semiconductor chip By embedding the optoelectronic semiconductor chip in the black housing material, lateral emission of electromagnetic radiation is greatly reduced.
  • the optoelectronic semiconductor chip advantageously appears darker in the switched-off state than a state-of-the-art optoelectronic semiconductor chip.
  • electromagnetic radiation incident from outside is absorbed. , which significantly improves the impression of black when switched off.
  • so-called phantom light can be prevented. Phantom light occurs when the optoelectronic component is illuminated and, due to increased reflection of external light by the optoelectronic component, merely gives the impression of emitting a light signal.
  • the improved impression of black therefore advantageously makes it easier to distinguish between active and inactive symbols in high ambient brightness.
  • the optical density of external cover elements can be reduced due to the improved impression of black, which can improve the overall efficiency of the optoelectronic component.
  • the optoelectronic arrangement comprises a privacy filter.
  • the privacy filter is arranged on the first radiation-emitting surface.
  • the privacy filter has slats running in a direction perpendicular to the first radiation-emitting surface.
  • the slats can, for example, extend completely through the privacy filter to the first radiation-emitting surface.
  • the slats of the privacy filter can promote increased emission of electromagnetic radiation perpendicular to the first radiation-emitting surface.
  • the angle-dependent radiation characteristic can be influenced by a width, a spacing, and a depth of the slats of the privacy filter.
  • the privacy filter can, for example, be designed in the form of a structured dielectric material, wherein the slats can be produced by structuring. At the same time, light incident on the optoelectronic semiconductor chip from the side is attenuated by the privacy filter, which likewise improves the impression of black.
  • the optoelectronic arrangement comprises a black layer.
  • the black layer is arranged on the first radiation emission surface. This advantageously reduces the impression of black in the switched-off state. The state of the optoelectronic semiconductor chip is improved.
  • the black layer can also be made of a black or blackened plastic, for example.
  • the optoelectronic arrangement comprises a wavelength-converting material.
  • the wavelength-converting material is arranged on the first radiation-emitting surface.
  • the wavelength-converting material can, for example, comprise a matrix material, such as silicone, and at least one phosphor.
  • the phosphor can, for example, be in the form of particles embedded in the matrix material.
  • the wavelength-converting material can comprise a ceramic phosphor.
  • the wavelength-converting material or the phosphor is designed to absorb electromagnetic radiation emitted by the optoelectronic semiconductor chip and, as a result of energy relaxation, to emit electromagnetic radiation of lower energy, i.e., to convert it. Overall, a mixture of the originally emitted radiation and the converted radiation is emitted.
  • an optoelectronic semiconductor chip can be configured to emit blue light, while the wavelength-converting material is configured to absorb the blue light and emit yellow light, so that overall white light is emitted.
  • the wavelength-converting material is arranged on the first radiation-emitting surface, and the privacy filter or the black layer is arranged on a side of the wavelength-converting material facing away from the first radiation-emitting surface. In one embodiment, the wavelength-converting material is arranged between the slats of the privacy filter.
  • Previously known optoelectronic components which comprise a wavelength-converting material have the disadvantage that they favor laterally directed emission parallel to the first radiation-emitting surface and that they appear bright when switched off.
  • the wavelength-converting property is advantageously combined with the modification of the angle-dependent radiation characteristic by means of the privacy filter or the modification of the impression of black by means of the black layer. By arranging the wavelength-converting material in the slats of the privacy filter, the optoelectronic component is thinner than if it were arranged one above the other or on top of the other.
  • the housing has an inner housing part and an outer housing part.
  • the optoelectronic semiconductor chip is embedded in the inner housing part.
  • the inner housing part is embedded in the outer housing part.
  • the inner housing part is white and the outer housing part is black.
  • the inner housing part forms a reflector, since the side surfaces of the optoelectronic semiconductor chip are covered by the inner, white housing part.
  • the top side of the optoelectronic semiconductor chip, i.e. the first radiation emission surface is uncovered by the inner and outer housing parts.
  • the inner housing part and the outer housing part can, for example, comprise a plastic. While the outer housing part comprises, for example, carbon particles, the inner housing part comprises, for example, titanium dioxide or silicon dioxide particles that are embedded in the plastic as volume scatterers. This additionally suppresses laterally directed emission parallel to the first radiation emission surface.
  • At least one waveguide structure is embedded in the housing.
  • the waveguide structure is designed to pass through the optoelectronic semiconductor chip parallel to the first radiation emission surface at a predeterminable angle with respect to the first radiation emission surface.
  • this additionally suppresses laterally directed emission, while promoting emission perpendicular to the first radiation emission surface.
  • the waveguide structure can be arranged at an angle of 45° with respect to the first radiation emission surface, whereby electromagnetic radiation can be guided at this angle. If several waveguide structures are embedded in the housing, they are arranged parallel to one another.
  • the optoelectronic component has a plurality of optoelectronic arrangements according to one of the embodiments.
  • the optoelectronic arrangements are arranged laterally next to one another on a mounting surface of a carrier.
  • the optoelectronic arrangements are embedded in a potting material arranged on the mounting surface.
  • the optoelectronic component can be designed, for example, as a display device, for example an operating element or a plastic trim part in an automobile.
  • the optoelectronic component can be designed as any desired display device that can be used, for example, in industry and the medical field.
  • Crosstalk between adjacent optoelectronic arrangements is advantageously reduced by the provision of the at least partially black housing, since lateral emission is suppressed. This increases the contrast in the application.
  • the improved contrast of the optoelectronic component for example, significantly improves the recognizability of symbols.
  • the carrier is black.
  • the contrast is further increased if the optoelectronic arrangements are arranged on a black carrier.
  • a cover is arranged on a potting surface of the potting material. The cover is transparent to facilitate light extraction. The cover also protects the optoelectronic component.
  • the cover is designed as an additional privacy filter.
  • the additional privacy filter has additional slats running in a direction perpendicular to the mounting surface of the carrier.
  • the additional privacy filter can also be referred to as a privacy foil and enables additional, perpendicular to the mounting surface and the first radiation emission surfaces of the optoelectronic semiconductor chips of the optoelectronic arrangements as a whole.
  • Fig. 1 an optoelectronic component according to a first embodiment in a side sectional view
  • Fig. 2 an optoelectronic component according to a second embodiment in a side sectional view
  • Fig. 3 an optoelectronic component according to a third embodiment in a side sectional view
  • Fig. 4 an optoelectronic component according to a fourth embodiment in a side sectional view
  • Fig. 5 an optoelectronic component according to a fifth embodiment in a side sectional view
  • Fig. 6 an optoelectronic component according to a sixth embodiment in a side sectional view
  • Fig. 7 an optoelectronic component according to a seventh embodiment in a side sectional view.
  • Fig. 1 shows schematically an optoelectronic component 1 according to a first embodiment in a side sectional view.
  • the optoelectronic component 1 has an optoelectronic semiconductor chip 8.
  • the optoelectronic semiconductor chip 8 is designed, for example, as a light-emitting diode.
  • the optoelectronic semiconductor chip 8 has a top side 9, a bottom side 10 opposite the top side 9, and side surfaces 11.
  • the optoelectronic semiconductor chip 8 is designed to emit electromagnetic radiation at its top side 9 and at its side surfaces 11.
  • the top side 9 can also be referred to as the first radiation emission surface 9, while the side surfaces 11 can be referred to as the second side surfaces 11. Since the optoelectronic semiconductor chip 8 can have any desired shape in its cross section parallel to the top side 9 and can, for example, be designed in the shape of a circular disk, the optoelectronic semiconductor chip 8 can have only a second radiation emission surface 11.
  • Laterally directed emission i.e., emission at at least one second radiation-emitting surface 11, causes a deterioration in contrast in previously known optoelectronic components.
  • the optoelectronic component 1 according to Fig. 1 is based on the idea of suppressing laterally directed emission parallel to the first radiation-emitting surface 9.
  • the optoelectronic component 1 has a housing 12.
  • the optoelectronic semiconductor chip 8 is in The housing 12 is embedded.
  • the housing 12 is made of silicone, for example, but it may also be made of another plastic.
  • the optoelectronic semiconductor chip 8 can be embedded in the housing 12, for example, by means of a molding process.
  • the optoelectronic semiconductor chip 8 is embedded in the housing 12 in such a way that the first radiation emission surface 9 is uncovered by the housing 12 or by the housing material.
  • the second radiation emission surfaces 11, in contrast, are covered by the housing 12.
  • the housing 12 therefore rests against the side surfaces 11 of the optoelectronic semiconductor chip 8 and laterally surrounds the optoelectronic semiconductor chip 8.
  • the underside 10 of the optoelectronic semiconductor chip 8 is, for example, uncovered.
  • the housing 12 can also cover the underside 10 of the optoelectronic semiconductor chip 8; for example, the housing 12 can only partially cover the underside 10 and have through openings or electrical feedthroughs for electrical contacts of the optoelectronic semiconductor chip 8 formed on the underside 10.
  • the optoelectronic semiconductor chip 8 can also be electrically contacted in a different way.
  • the housing 12 is black, i.e. the housing material is predominantly absorbent in the visible spectrum of electromagnetic radiation.
  • the housing 12 can, for example, comprise a black plastic or black particles embedded in a plastic.
  • carbon particles embedded in silicone can cause the silicone to become black.
  • the housing 12 is black, laterally emitted electromagnetic radiation is predominantly absorbed, whereby a contrast between emitting and non-emitting regions of the optoelectronic component 1 in a plane parallel to the first radiation emission surface 9 is improved.
  • a black impression in a switched-off state of the optoelectronic see semiconductor chips 8 increased.
  • the contrast refers to a difference between a switched-off state of the optoelectronic semiconductor chip 8 and an operating state in which electromagnetic radiation is emitted.
  • the optoelectronic semiconductor chip 8 and the housing 12 form an optoelectronic arrangement 13.
  • the optoelectronic arrangement 13 also comprises a wavelength-converting material 14 and a privacy filter 15.
  • the wavelength-converting material 14 is arranged on the first radiation-emitting surface 9 and is designed to absorb electromagnetic radiation emitted at the first radiation-emitting surface 9 and to emit electromagnetic radiation of lower energy, i.e. of higher wavelength. Overall, this emits electromagnetic radiation which has spectral components of the radiation emitted at the first radiation-emitting surface 9 and components of the converted radiation. This can influence a color locus of light emitted by the optoelectronic component 1.
  • the wavelength-converting material 14 can, for example, comprise at least one phosphor which is embedded in a plastic, for example in silicone. Alternatively, the wavelength-converting material 14 can comprise a ceramic phosphor.
  • the privacy filter 15 is also arranged on the first radiation emission surface 9, wherein the wavelength-converting material 14 is arranged on the first radiation emission surface 9 and the privacy filter 15 is arranged on a side of the wavelength-converting material 14 facing away from the optoelectronic semiconductor chip 8.
  • the fact that the wavelength-converting material 14 is arranged on the first radiation emission surface 9 means that it is in direct and immediate mechanical contact with the first Radiation-emitting surface 9, while the privacy filter 15 is arranged only on the first radiation-emitting surface 9, ie, the privacy filter 15 is arranged above the first radiation-emitting surface 9. Since the privacy filter 15 is arranged on the wavelength-converting material 14, the privacy filter 15 is in direct and immediate mechanical contact with the wavelength-converting material 14. The wavelength-converting material 14 is thus arranged between the first radiation-emitting surface 9 and the privacy filter 15.
  • the privacy filter 15 has slats 16 extending in a direction perpendicular to the first radiation-emitting surface 9. Electromagnetic radiation emitted essentially perpendicular to the first radiation-emitting surface 9 always has a certain component parallel to the first radiation-emitting surface 9, since angle-dependent radiation actually occurs and a radiation lobe is emitted.
  • the slats 16 of the privacy filter 15 suppress emission perpendicular to the direction of extension of the slats 16, i.e., parallel to the first radiation-emitting surface 9. This additionally suppresses laterally directed emission.
  • the housing 12 is designed, for example, such that it is flush with the top side 9 and the bottom side 10.
  • the wavelength-converting material 14 and the privacy filter 15 are arranged above the housing 12 with respect to the first radiation-emitting surface 9, with the wavelength-converting material 14 resting against an upper edge of the housing 12 and against the first radiation-emitting surface 9.
  • the housing 12 can protrude beyond the top side 9 and/or the bottom side 10. If the housing 12 protrudes beyond the top side 9 or the first radiation emission surface 9, sion surface 9, the housing 12 and the optoelectronic semiconductor chip 8 enclose a cavity.
  • the wavelength-converting material 14 and the privacy filter 15 can be arranged in the cavity, in contrast to the illustration in Fig. 1.
  • Fig. 2 schematically shows an optoelectronic component 2 according to a second embodiment in a side sectional view.
  • the optoelectronic component 2 according to Fig. 2 has similarities to the optoelectronic component according to Fig. 1. In the following, only the differences from the optoelectronic component according to Fig. 1 are explained. The reference numerals are retained for similar or identical elements.
  • the optoelectronic component 2 does not have a privacy filter 15. Instead, the optoelectronic arrangement comprises a black layer 17 which is arranged on the first radiation emission surface 9, wherein the wavelength-converting material 14 is arranged on the first radiation emission surface 9 and the black layer 17 is arranged on the side of the wavelength-converting material 14 facing away from the optoelectronic semiconductor chip 8.
  • the fact that the wavelength-converting material 14 is arranged on the first radiation emission surface 9 means that it is in direct and immediate mechanical contact with the first radiation emission surface 9, while the black layer 17 is arranged only on the first radiation emission surface 9, i.e. that the black layer 17 is arranged above the first radiation emission surface 9.
  • the black layer 17 is arranged on the wavelength-converting material 14, the black layer 17 is in direct and immediate mechanical contact with the wavelength-converting material 14.
  • the wavelength-converting material 14 is therefore arranged between the first radiation-emitting surface 9 and the black layer 17.
  • the wavelength-converting material 14 and the privacy filter 15 can each be omitted. If no wavelength con- If a shielding material 14 is provided, the privacy filter 15 is arranged directly on the first radiation emitting surface 9 and is in direct mechanical contact with it.
  • the black layer 17 is designed to be predominantly absorbent in the visible spectrum of electromagnetic radiation.
  • the black layer 17 can, for example, comprise a black plastic or black particles embedded in a plastic.
  • the black layer 17 improves the black impression of the optoelectronic component 2 in a switched-off state.
  • the black layer 17 can also be arranged in a cavity enclosed by the housing 12 and the optoelectronic semiconductor chip 8.
  • the black layer 17 can also be omitted.
  • the wavelength-converting material 14 can also be omitted. If no wavelength-converting material 14 is provided, the black layer 17 is arranged directly on the first radiation-emitting surface 9 and is in direct mechanical contact with the latter.
  • Fig. 3 schematically shows an optoelectronic component 3 according to a third embodiment in a side sectional view.
  • the optoelectronic component 3 according to Fig. 3 has similarities to the optoelectronic component according to Fig. 2. In the following, only the differences from the optoelectronic component according to Fig. 2 are explained. The reference numerals are retained for similar or identical elements.
  • the housing 12 of the optoelectronic component 2 of Fig. 2 is, for example, completely black.
  • the housing 12 of the optoelectronic component 3 of Fig. 3 has an inner housing part 18 and an outer housing part 19.
  • the optoelectronic semiconductor chip 8 is embedded in the inner housing part 18.
  • the inner housing part 18 is embedded in the outer housing part 19.
  • the inner housing part 18 is white and the outer housing- part 19 is black.
  • the housing 12 is only partially black.
  • the inner housing part 18 can, for example, have a white plastic or scattering particles embedded in a plastic, such as titanium dioxide particles embedded in silicone, which are particularly efficient volume scatterers.
  • the inner housing part 18 is designed as a reflector in which the optoelectronic semiconductor chip 8 is embedded. Laterally directed emission is significantly reduced by the white inner housing part 18.
  • the outer housing part 19, on the other hand, is also provided to absorb externally incident light, whereby the impression of black is improved in the switched-off state.
  • the optoelectronic component 1 according to Fig. 1 can also have a housing 12 according to Fig. 3 with an inner and an outer housing part 18, 19.
  • Fig. 4 schematically shows an optoelectronic component 4 according to a fourth embodiment in a side sectional view.
  • the optoelectronic component 4 according to Fig. 4 has similarities to the optoelectronic component according to Fig. 3. In the following, only the differences from the optoelectronic component according to Fig. 3 are explained. The reference numerals are retained for similar or identical elements.
  • waveguide structures 20 are embedded in the housing 12.
  • the waveguide structures 20 are designed to guide electromagnetic radiation emitted by the optoelectronic semiconductor chip 8 parallel to the first radiation emission surface 9 at a predeterminable angle with respect to the first radiation emission surface 9.
  • the waveguide structures 20 are arranged at an angle of 45° with respect to the first radiation emission surface 9.
  • laterally emitted electromagnetic radiation is emitted at an angle of 45° from the optoelectronic semiconductor chip 8.
  • the optoelectronic component 4 according to Fig. 4 has a plurality of arranged waveguide structures 20. However, it may also be sufficient to provide one waveguide structure 20.
  • Fig. 5 schematically shows an optoelectronic component 5 according to a fifth embodiment in a side sectional view.
  • the optoelectronic component 5 according to Fig. 5 has similarities to the optoelectronic component according to Fig. 1. In the following, only the differences from the optoelectronic component according to Fig. 1 are explained. The reference numerals are retained for similar or identical elements.
  • the optoelectronic component 5 according to Fig. 5 differs from the optoelectronic component 1 of Fig. 1 in that the wavelength-converting material 14 is arranged between the slats 16 of the privacy filter 15.
  • the privacy filter 15 as such has recesses which are formed between the slats 16 and define the slats.
  • the wavelength-converting material 14 is therefore arranged in the recesses and between the slats.
  • the wavelength-converting material 14 is arranged on the first radiation-emitting surface 9; more precisely, the wavelength-converting material 14 is arranged in the region of the slats 16 on the first radiation-emitting surface 9 and is in direct mechanical contact therewith.
  • Fig. 6 shows schematically an optoelectronic component 6 according to a sixth embodiment in a lateral sectional view.
  • the optoelectronic component 6 according to Fig. 6 has a plurality of optoelectronic arrangements 13 which are arranged on a Mounting surface 21 of a carrier 22 are arranged laterally next to one another.
  • a total of three optoelectronic arrangements 13 according to Fig. 2 are arranged on the mounting surface 21 of the carrier 22.
  • any desired number of optoelectronic arrangements 13 can be arranged on the mounting surface 21.
  • optoelectronic components 1, 3, 4, 5 according to one of Fig. 1, Fig. 3, Fig. 4 and Fig. 5 can also be arranged on the mounting surface 21.
  • the optoelectronic arrangements 13 are arranged on the mounting surface 21 of the carrier 22 in such a way that the undersides 10 of the optoelectronic arrangements 13 face the mounting surface 21.
  • At least one further layer 23 can also be arranged between the mounting surface 21 and the optoelectronic arrangements 13, as shown by way of example in Fig. 6.
  • the further layer 23 can fulfill different functions.
  • the further layer 23 can comprise a dielectric material and be provided for electrical insulation.
  • the further layer 23 can also be omitted.
  • the carrier 22 can, for example, be in the form of a printed circuit board (PCB). Alternatively, the carrier 22 can be in the form of a flexible film.
  • the carrier 22 can therefore generally comprise any desired material.
  • the carrier 22 can be black or comprise a black material. As a result, external light which strikes the carrier 22 is absorbed and the lateral contrast and the impression of black in the switched-off state of the optoelectronic component 6 is additionally improved.
  • the carrier 22 does not necessarily have to be black.
  • the at least partially black housings 12 of the optoelectronic arrangements 13 have the effect of suppressing optical crosstalk between adjacent optoelectronic arrangements 13.
  • a potting material 24 is arranged on the mounting surface 21.
  • the potting material 24 comprises, for example, silicone or another plastic.
  • the optoelectronic arrangements 13 are embedded in the potting material 24.
  • the potting material 24 completely embeds the optoelectronic arrangements.
  • the potting material 24 has a potting surface 25 formed above the optoelectronic arrangements 13 with respect to the mounting surface 21 of the carrier 22.
  • a transparent cover 26 is arranged on the potting surface 25 of the potting material 24. However, the cover 26 can also be omitted.
  • Fig. 7 schematically shows an optoelectronic component 7 according to a seventh embodiment in a side sectional view.
  • the optoelectronic component 7 according to Fig. 7 has similarities to the optoelectronic component according to Fig. 6. In the following, only the differences from the optoelectronic component according to Fig. 6 are explained. The reference symbols are retained for similar or identical elements.
  • the cover 26 in the optoelectronic component 7 according to Fig. 7 is designed as a further privacy filter 27.
  • the further privacy filter 27 has further slats 28 running in a direction perpendicular to the mounting surface 21 of the carrier 22.
  • the further slats 28 can, for example, extend completely through the cover 26 or the further privacy filter 27 up to the potting surface 25 of the potting material 24.
  • the further privacy filter 27 is provided to additionally suppress a component of electromagnetic radiation parallel to the mounting surface 21 of the carrier 22, which component is emitted by the optoelectronic arrangements 13.
  • the angle-dependent radiation characteristic can be further modified by adjusting the distance and width of the additional slats 28, also with regard to an angle-dependent color distribution.
  • the invention has been illustrated and described in more detail using preferred embodiments. However, the invention is not limited to the disclosed examples. Rather, other variations may be derived therefrom by those skilled in the art without departing from the scope of the invention.

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Abstract

L'invention concerne un composant optoélectronique (1,2,3, 4,5,6, 7) comportant un dispositif optoélectronique (13) comprenant un boîtier (12) et une puce semi-conductrice optoélectronique (8) intégrée dans le boîtier (12). Cette puce semi-conductrice opto-électronique est conçue pour émettre un rayonnement électro-magnétique. Au moins une première surface d'émission de rayonnement (9) de la puce semi-conductrice optoélectronique (8) n'est pas recouverte par un matériau du boîtier (12). Le boîtier (12) est au moins partiellement noir.
PCT/EP2025/054857 2024-03-01 2025-02-24 Composant optoélectronique Pending WO2025181009A1 (fr)

Applications Claiming Priority (2)

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DE102013217709A1 (de) * 2013-09-05 2015-03-05 Carl Zeiss Microscopy Gmbh Beleuchtungsvorrichtung und digitaler Profilprojektor
DE102015112042A1 (de) * 2015-07-23 2017-01-26 Osram Opto Semiconductors Gmbh Optoelektronische Leuchtvorrichtung
US20180254263A1 (en) * 2015-09-18 2018-09-06 Citizen Electronics Co., Ltd. Light-emitting device
US20210055223A1 (en) * 2018-05-08 2021-02-25 Byonoy Gmbh Transmission apparatus for examining samples in cavities of a microtiter plate and method for examining samples in cavities of a microtiter plate by means of transmission
US20200083397A1 (en) * 2018-09-10 2020-03-12 Samsung Electronics Co., Ltd. Display apparatus and manufacturing method thereof
DE102024105959A1 (de) 2024-03-01 2025-09-04 Ams-Osram International Gmbh Optoelektronisches bauelement

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