[go: up one dir, main page]

WO2025179275A1 - Séparation photoélectrochimique de l'eau avec lumière solaire concentrée - Google Patents

Séparation photoélectrochimique de l'eau avec lumière solaire concentrée

Info

Publication number
WO2025179275A1
WO2025179275A1 PCT/US2025/017044 US2025017044W WO2025179275A1 WO 2025179275 A1 WO2025179275 A1 WO 2025179275A1 US 2025017044 W US2025017044 W US 2025017044W WO 2025179275 A1 WO2025179275 A1 WO 2025179275A1
Authority
WO
WIPO (PCT)
Prior art keywords
metal catalyst
nanoparticles
substrate
array
catalyst nanoparticles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/US2025/017044
Other languages
English (en)
Inventor
Wan Jae Dong
Zetian Mi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Michigan System
Original Assignee
University of Michigan System
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Michigan System filed Critical University of Michigan System
Publication of WO2025179275A1 publication Critical patent/WO2025179275A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B9/00—Cells or assemblies of cells; Constructional parts of cells; Assemblies of constructional parts, e.g. electrode-diaphragm assemblies; Process-related cell features
    • C25B9/50—Cells or assemblies of cells comprising photoelectrodes; Assemblies of constructional parts thereof
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
    • C25B11/02—Electrodes; Manufacture thereof not otherwise provided for characterised by shape or form
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
    • C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
    • C25B11/051—Electrodes formed of electrocatalysts on a substrate or carrier
    • C25B11/052—Electrodes comprising one or more electrocatalytic coatings on a substrate
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
    • C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
    • C25B11/051—Electrodes formed of electrocatalysts on a substrate or carrier
    • C25B11/055—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the substrate or carrier material
    • C25B11/057—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the substrate or carrier material consisting of a single element or compound
    • C25B11/067—Inorganic compound e.g. ITO, silica or titania
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
    • C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
    • C25B11/051—Electrodes formed of electrocatalysts on a substrate or carrier
    • C25B11/073—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material
    • C25B11/075—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material consisting of a single catalytic element or catalytic compound
    • C25B11/081—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material consisting of a single catalytic element or catalytic compound the element being a noble metal
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B1/00—Electrolytic production of inorganic compounds or non-metals
    • C25B1/01—Products
    • C25B1/02—Hydrogen or oxygen
    • C25B1/04—Hydrogen or oxygen by electrolysis of water
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/10—Process efficiency
    • Y02P20/133—Renewable energy sources, e.g. sunlight

Definitions

  • Hydrogen (H 2 ) stands as a clean energy source that can be produced through solar water splitting, offering a sustainable alternative to carbon-emitting fossil fuels.
  • numerous semiconductor photoelectrodes have harnessed solar energy for the production of green H 2 through photoelectrochemical (PEC) water splitting.
  • PEC photoelectrochemical
  • the photoelectrodes operating under solar light offer a voltage saving when compared to electrocatalysts operating in dark.
  • the maximum photocurrent density (J P h) is inherently constrained by the quantity of photogenerated charge carriers within the semiconductors, leading to limited H 2 production yield.
  • Photoelectrodes have been fabricated by applying cocatalysts onto semiconductor materials.
  • high-efficiency semiconductor materials Si and lll-V semiconductors
  • passivation layers of amorphous oxides such as AI2O3 or TiC>2 have been deposited on the semiconductors prior to applying cocatalysts, such as Pt nanoparticle cocatalysts.
  • the hydrogel protector prevented the agglomeration and detachment of Pt nanoparticles and suppressed the photo-corrosion of the TiC>2 passivation layer. While such protective schemes have resolved stability problems to some extent, efficient and stable PEC water splitting has remained elusive, especially in conditions in which concentrated solar light is used to accelerate the H 2 production rate.
  • a device in accordance with yet another aspect of the disclosure, includes a substrate having a surface, an array of conductive projections supported by the substrate and extending outward from the surface of the substrate, each conductive projection of the array of conductive projections including a nitride material, and a plurality of metal catalyst nanoparticles disposed over the array of conductive projections.
  • Each metal catalyst nanoparticle of the plurality of metal catalyst nanoparticles is lattice-matched with the nitride material.
  • Each metal catalyst nanoparticle of the plurality of metal catalyst nanoparticles has an inner void.
  • Figure 1 depicts (a) a tilt-view SEM image of Pt-loaded GaN nanowires / n + -p Si photoelectrode, as well as graphical plots of (b) saturated current density (Jsaturation), onset potential (V onS et), and saturation potential (V sa turation) with light intensity, (c) photocurrent density at 0 VRHE (JO), and (d) V onS et for Pt/GaN/Si and GaN/Si measured as a function of time under 1 sun and 6.4 sun light.
  • saturated current density Jsaturation
  • V onS et onset potential
  • V sa turation saturation potential
  • Figure 2 depicts AR-XPS analysis of Pt/GaN/Si and GaN/Si before and after reaction for 24 h under 6.4 sun light, including graphical plots of relative surface atomic ratio of (a) Pt/GaN/Si and (b) GaN/Si, along with graphical plots of XPS spectra of (c) Ga 3d, (d) O 1 s, and (e) Pt 4f.
  • Figure 5 depicts schematic views of photoelectrodes having an array of nanostructures for hydrogen evolution via water splitting from concentrated solar light in accordance with one example.
  • Figure 6 is a schematic view and block diagram of an electrochemical system having a photocathode with an array of nanostructures for hydrogen evolution via water splitting from concentrated solar light in accordance with one example.
  • the disclosed devices and systems are not limited to GaN-based nanowire arrays.
  • a wide variety of other types of nanostructures and other conductive projections may be used.
  • the electrodes of the disclosed systems do not include an array of nanowires, and instead include other shaped projections.
  • Alternative or additional Ill-nitride semiconductor materials may be used, including, for instance, InGaN.
  • the composition, nature, construction, configuration, characteristics, shape, and other aspects of the electrodes may vary.
  • the disclosed photocatalytic devices are also not limited to Ill-nitride semiconductor materials.
  • other nitride materials such as TiN x , carbon nitride, and ScN, may be used.
  • the disclosed devices are also not limited to nanowires or conductive projections having a uniform semiconductor composition.
  • the conductive projections of the photocatalytic devices may have a multi-band configuration.
  • the arrays may include monolithically integrated multiple-band InGaN nanostructures or segments configured to act as photocatalysts.
  • Each conductive projection may thus be capable of photoexcitation via a wider range of wavelengths, including, for instance, both ultraviolet and visible portions of the solar spectra. Any number or type of segments may be included.
  • the disclosed devices and methods are not limited to platinum nanoparticles.
  • Other metals may be used.
  • alternative or additional noble metals may be used.
  • Still other metals may be used, including, for instance, Co and Ni.
  • the nature, construction, configuration, characteristics, shape, and other aspects of the nanoparticle catalysts may vary.
  • the disclosed devices are useful in connection with a variety of different light sources.
  • the spectrum or other characteristics of the light source may vary accordingly.
  • the radiation may be or otherwise include various types of artificial light.
  • the artificial light may include any combination of infrared, visible, and/or ultraviolet wavelengths.
  • the epitaxial growth of the nanowires of the disclosed devices may have one or more parameters or other aspects in common with those set forth in the following publications: Kibria, M. et al., "Visible light-driven efficient overall water splitting using p-type metal-nitride nanowire arrays," Nat. Commun. 6, 1-8 (2015); Wang, D. et al., “Wafer-level photocatalytic water splitting on GaN nanowire arrays grown by molecular beam epitaxy," Nano Lett. 11 , 2353-2357 (2011), Guan, X. et al., “Making of an industry-friendly artificial photosynthesis device," ACS Energy Lett. 3, 2230-2231 (2016), U.S. Patent Publication No.
  • NPs Pt nanoparticles
  • NWs single crystalline GaN nanowires
  • NPs Pt nanoparticles
  • NWs single crystalline GaN nanowires
  • the example devices operate efficiently and stably under concentrated solar light despite a large number of Pt nanoparticles detaching during an initial reaction due to H 2 gas bubbling.
  • some Pt nanoparticles that have an epitaxial relation with GaN nanowires remain stably anchored.
  • the stability of the example photoelectrodes further improves by redepositing Pt nanoparticles on the reacted Pt/GaN surface, which results in maintaining onset potential greater than 0.5 V vs. reversible hydrogen electrode and photocurrent density greater than 60 mA/cm 2 for over 1500 hours.
  • the heterointerface between the Pt cocatalysts and the single crystalline GaN nanostructures provides an efficient and stable photoelectrode for high-yield solar to H 2 conversion.
  • a Pt/GaN/Si photoelectrode was fabricated by vertical growth of n-type GaN nanowires on planar n + -p Si wafer followed by photo-deposition of Pt nanoparticles.
  • Each GaN nanowire in the array had a length of about 400 nm, as observed in a scanning electron microscopy (SEM) image ( Figure 1 , part a). Further details regarding the fabrication of these and other example photoelectrodes are depicted and described below in connection with Figure 7.
  • the photoelectrode was deployed in a concentrated solar light PEC water splitting system with the Pt/GaN/Si photoelectrode in an H-type flow cell including a Pt wire counter electrode, and an Ag/AgCI reference electrode with National proton exchange membrane. Further details regarding example systems are depicted and described below in connection with Figures 6 and 8. A 0.5 M H2SO4 aqueous electrolyte was continuously circulated, and AM 1 .5 G-filtered solar light was irradiated on the backside of the photoelectrode during the reaction.
  • the photoexcited electrons in the conduction band of the Si substrate drift toward the n-type GaN nanowires due to the built-in potential generated at the p-n junction, whereas the photogenerated holes in the valance band of p-Si move to a Cu back contact through a Gain eutectic alloy. Because there is a negligible energy barrier between the conduction bands of n-Si and n-GaN, photogenerated electrons efficiently migrate to the Pt/GaN surface and participate in the HER.
  • the linear correlation between J sa utration and light intensity indicates that the number of charge carriers generated in the photoelectrode, determined by the light intensity, is the main limiting factor for the J P h ( Figure 1 , part b).
  • the lattices of the Pt nanoparticles and the GaN nanowires were aligned with epitaxial relations. Specifically, the five lattice spacings of Pt (200) were aligned to the four lattice spacings of GaN (002), with an edge dislocation propagating in Pt nanoparticle NP1 .
  • the lattices of Pt nanoparticle NP2 and Pt nanoparticle NP3 with (111) orientation exhibited an epitaxial relationship with GaN (002) ( Figure 3, part d).
  • Pt nanoparticle NP2 had a dislocation inside, while the adjacent Pt nanoparticle NP3 did not. In the case of a larger Pt nanoparticle NP4, two dislocation lines were observed inside of the particle.
  • Pt nanoparticles with large size can form dislocations inside to release interfacial stress, while Pt nanoparticles with small size show a preference for lattice expansion over dislocation formation (Figure 3, part f).
  • tensile strain acting on Pt catalysts deteriorates their H 2 evolution catalytic properties. This is likely one of the reasons why the Pt/GaN/Si photoelectrode degraded despite the presence of Pt nanoparticles on the photoelectrode after the concentrated solar light experiment.
  • the Pt nanoparticles lattice-matched to GaN showed strong bonding strength, which allows them to maintain good stability even under harsh reaction conditions.
  • the examples disclosed herein provide a clear understanding of the bonding mechanism between the cocatalyst and photoelectrode via use of a single crystalline GaN nanowires and the deposition of Pt cocatalysts on them.
  • the lattice alignment between the Pt cocatalyst and GaN nanowires can induce strong bonding strength, anchoring the Pt cocatalysts onto the photoelectrodes even under harsh concentrated solar light.
  • the utilization efficiency of Pt was still limited by the detachment of the Pt cocatalysts from the GaN nanowires due to in-situ surface modification of GaN during the initial reaction.
  • the implementation of the surface treatment techniques of the disclosed methods will establish a strong binding at the interface between GaN and Pt, thereby minimizing the detachment of the Pt nanoparticles from the GaN surface.
  • J o may be increased to over 240 mA/cm 2 .
  • These and other operating conditions may result in a considerable amount of photothermic heat.
  • the rubber O-rings used in the flow cell were damaged by ultraviolet light and photothermic heat after about 52 h.
  • the photothermal effect where the absorption of light leads to localized heating, may further enhance the efficiency of reaction kinetics at locally elevated temperatures on the surface of photoelectrodes under concentrated solar light.
  • the example Pt/GaN/Si photoelectrode under concentrated solar light (6.4 sun) exhibited about 4-fold higher H 2 production rate and one order of magnitude higher J o than previous photoelectrodes involving, for instance, oxides or chalcogenides semiconductors.
  • the example photoelectrodes while working under accelerated reaction conditions, will both reduce the material cost (light absorbers and cocatalysts) and also increase the hydrogen production rate per unit photoelectrode area.
  • the localized heating induced by concentrated solar light can enhance reaction kinetics.
  • the localized hearting may bring significant improvements of efficiency and stability, and realize low cost solar fuel production.
  • the electrochemical cell 102 has a three-electrode configuration.
  • the electrochemical cell 102 includes a working electrode 108, a counter electrode 110, and a reference electrode 112, each of which is immersed in the electrolyte 104.
  • the counter electrode 110 may be or include a metal wire, such as a platinum wire.
  • the reference electrode 112 may be configured as a reversible hydrogen electrode (RHE) (e.g., Ag/AgCI filled with 3 M KCI). The positioning of the reference electrode 112 may vary from the example shown. For example, the reference electrode 112 may be adjacent to the counter electrode 110 in other cases.
  • the configuration of the counter and reference electrodes 110, 112 may vary.
  • the working electrode 108 is configured as a photocathode.
  • Light 118 such as solar radiation, may be incident upon the working electrode 108 as shown.
  • the electrochemical cell 102 may thus be considered and configured as a photoelectrochemical cell.
  • illumination of the working electrode 108 may cause charge carriers to be generated in the working electrode 108.
  • Electrons that reach the surface of the working electrode 108 may then be used in the hydrogen evolution.
  • the photogenerated electrons may augment electrons provided via the current path.
  • each nanowire 126 may include a layered or segmented arrangement of semiconductor materials.
  • the layers or segments of the arrangement may have differing Group III (e.g., indium and gallium) compositions.
  • One or more layers or segments in the arrangement may be configured for absorption of a respective range of wavelengths.
  • Each nanowire 126 may include one or more segments having a compound semiconductor composition (e.g., InGaN) configured for photogeneration of charge carriers. Other layers or segments may be directed to establishing a tunnel junction.
  • Each nanowire 126 may include segments having a compound semiconductor composition (e.g., InGaN) configured to establish a tunnel junction.
  • Each nanowire 126 may also include additional or alternative segments, including, for instance, a segment between the tunnel junction and the substrate 120.
  • plasma-assisted molecular beam epitaxy was employed for the growth of GaN nanowires on the front side of a n + -p Si wafer under nitrogen-rich conditions with an N 2 flow rate of 1 .0 standard cubic centimeter per minute.
  • the substrate temperature was held at 790 e C and the growth duration was about 2 h.
  • the forward plasma power was 350 W with Ga flux beam equivalent pressure of 5x10 -8 Torr.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Catalysts (AREA)

Abstract

L'invention concerne un procédé de fabrication d'un dispositif d'électrode consistant à fournir un substrat du dispositif d'électrode, le substrat ayant une surface, à faire croître un réseau de saillies conductrices sur la surface du substrat de telle sorte que chaque saillie conductrice du réseau de saillies conductrices s'étend vers l'extérieur à partir de la surface du substrat, chaque saillie conductrice du réseau de saillies conductrices comprenant un matériau de nitrure, à déposer une pluralité de nanoparticules de catalyseur métallique à travers le réseau de saillies conductrices, et à mettre en œuvre une procédure de traitement de surface pour modifier la pluralité de nanoparticules de catalyseur métallique. La mise en œuvre de la procédure de traitement de surface consiste à éliminer un sous-ensemble de la pluralité de nanoparticules de catalyseur métallique, et à déposer en outre une autre pluralité de nanoparticules de catalyseur métallique après élimination du sous-ensemble. Le sous-ensemble éliminé comprend des nanoparticules de catalyseur métallique de la pluralité de nanoparticules de catalyseur métallique qui ne sont pas mises en correspondance de réseau avec le matériau de nitrure.
PCT/US2025/017044 2024-02-22 2025-02-24 Séparation photoélectrochimique de l'eau avec lumière solaire concentrée Pending WO2025179275A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202463556535P 2024-02-22 2024-02-22
US63/556,535 2024-02-22

Publications (1)

Publication Number Publication Date
WO2025179275A1 true WO2025179275A1 (fr) 2025-08-28

Family

ID=96847869

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2025/017044 Pending WO2025179275A1 (fr) 2024-02-22 2025-02-24 Séparation photoélectrochimique de l'eau avec lumière solaire concentrée

Country Status (1)

Country Link
WO (1) WO2025179275A1 (fr)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060225162A1 (en) * 2005-03-30 2006-10-05 Sungsoo Yi Method of making a substrate structure with enhanced surface area
US20100325073A1 (en) * 2008-02-18 2010-12-23 Technion Research And Development Foundation Ltd. Nitrogen oxide sensitive field effect transistors for explosive detection comprising functionalized non-oxidized silicon nanowires
US20110220171A1 (en) * 2009-01-30 2011-09-15 Mathai Sagi V Photovoltaic Structure and Solar Cell and Method of Fabrication Employing Hidden Electrode
US20130000958A1 (en) * 2011-06-30 2013-01-03 Samsung Electro-Mechancis Co., Ltd. Multilayer ceramic substrate and method for manufacturing the same
US20160334359A1 (en) * 2014-12-23 2016-11-17 Korea Advanced Institute Of Science And Technology Member for Gas Sensor, Having a Metal Oxide Semiconductor Tube Wall with Micropores and Macropores, Gas Sensor, and Method for Manufacturing Same
JP2019218528A (ja) * 2018-06-22 2019-12-26 スタンレー電気株式会社 窒化物ナノ粒子及びその製造方法
US20220243341A1 (en) * 2019-07-25 2022-08-04 The Regents Of The University Of Michigan Co2 conversion with nanowire-nanoparticle architecture

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060225162A1 (en) * 2005-03-30 2006-10-05 Sungsoo Yi Method of making a substrate structure with enhanced surface area
US20100325073A1 (en) * 2008-02-18 2010-12-23 Technion Research And Development Foundation Ltd. Nitrogen oxide sensitive field effect transistors for explosive detection comprising functionalized non-oxidized silicon nanowires
US20110220171A1 (en) * 2009-01-30 2011-09-15 Mathai Sagi V Photovoltaic Structure and Solar Cell and Method of Fabrication Employing Hidden Electrode
US20130000958A1 (en) * 2011-06-30 2013-01-03 Samsung Electro-Mechancis Co., Ltd. Multilayer ceramic substrate and method for manufacturing the same
US20160334359A1 (en) * 2014-12-23 2016-11-17 Korea Advanced Institute Of Science And Technology Member for Gas Sensor, Having a Metal Oxide Semiconductor Tube Wall with Micropores and Macropores, Gas Sensor, and Method for Manufacturing Same
JP2019218528A (ja) * 2018-06-22 2019-12-26 スタンレー電気株式会社 窒化物ナノ粒子及びその製造方法
US20220243341A1 (en) * 2019-07-25 2022-08-04 The Regents Of The University Of Michigan Co2 conversion with nanowire-nanoparticle architecture

Similar Documents

Publication Publication Date Title
US10351963B2 (en) Photocathodes and dual photoelectrodes for nanowire photonic devices
US11349039B2 (en) Axially-integrated epitaxially-grown tandem wire arrays
US20130174896A1 (en) Tandem solar cell using a silicon microwire array and amorphous silicon photovoltaic layer
Riyajuddin et al. Silicon nanowire–Ta 2 O 5–NGQD heterostructure: an efficient photocathode for photoelectrochemical hydrogen evolution
Butson et al. Photoelectrochemical studies of InGaN/GaN MQW photoanodes
CN114657641A (zh) 一种退火处理的Si基InN纳米柱异质结及其制备方法与应用
US20220243341A1 (en) Co2 conversion with nanowire-nanoparticle architecture
US20230407498A1 (en) Water splitting device protection
CN111036263A (zh) 一种Si衬底上InGaN纳米柱@Ti-Ni纳米粒子复合结构及其制备方法与应用
US20230017032A1 (en) Co2 conversion with metal sulfide nanoparticles
WO2025179275A1 (fr) Séparation photoélectrochimique de l'eau avec lumière solaire concentrée
KR20250136327A (ko) 해수 분해를 통한 수소 생산
US20240194802A1 (en) Photoelectrodes and methods of making and use thereof
US20240342695A1 (en) Temperature-controlled photocatalytic and other chemical reactions
KR20250168374A (ko) 2전극 전기화학 시스템 안정화
WO2024196874A2 (fr) Stabilisation de système électrochimique à deux électrodes
US20240301573A1 (en) Bismuth-based co-catalyst arrangement
US20250346492A1 (en) Photocatalytic co2 reduction with co-catalyst decorated nanostructures
WO2025221328A2 (fr) Synthèse photocatalytique d'urée
Zhao et al. InGaN/Cu Core-Shell 2O Nanowire Heterostructure Photoanode for Efficient Solar Water Splitting
김창연 Tailoring catalytic activities of nanostructured catalysts on silicon for solar fuels production
JP6619370B2 (ja) 光反応装置
CN115939251A (zh) 基于隧穿钝化接触技术的硅基光电化学制氢光阴极制备方法
Fan III-nitride nanowire photoelectrodes: design, epitaxial growth, and solar-to-fuels production
Wang Solar Water Splitting on Low-Dimensional Semiconductor Nanostructures

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 25759012

Country of ref document: EP

Kind code of ref document: A1