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WO2025177784A1 - Mandrin, sondeur le comprenant et système de test de tranche - Google Patents

Mandrin, sondeur le comprenant et système de test de tranche

Info

Publication number
WO2025177784A1
WO2025177784A1 PCT/JP2025/002629 JP2025002629W WO2025177784A1 WO 2025177784 A1 WO2025177784 A1 WO 2025177784A1 JP 2025002629 W JP2025002629 W JP 2025002629W WO 2025177784 A1 WO2025177784 A1 WO 2025177784A1
Authority
WO
WIPO (PCT)
Prior art keywords
space
layer
flow path
introduction
chuck
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/JP2025/002629
Other languages
English (en)
Japanese (ja)
Inventor
卓也 山野上
裕 鈴木
隆 斎藤
徹郎 山下
顕太朗 小西
知基 糠信
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Welcon
WELCON Inc
Tokyo Electron Ltd
Welcon Inc Japan
Original Assignee
Welcon
WELCON Inc
Tokyo Electron Ltd
Welcon Inc Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Welcon, WELCON Inc, Tokyo Electron Ltd, Welcon Inc Japan filed Critical Welcon
Publication of WO2025177784A1 publication Critical patent/WO2025177784A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Definitions

  • the present invention relates to a chuck, a prober having the same, and a wafer test system.
  • various processes are performed on semiconductor wafers to form multiple chip-shaped semiconductor devices.
  • the electrical characteristics of each semiconductor device on the wafer are inspected, and then the devices are separated using a dicer, and any defective semiconductor chips are removed.
  • chucks are equipped with heating mechanisms (heaters, etc.) and cooling mechanisms, which allow the chuck to be kept at a predetermined temperature while inspecting the wafer held on the chuck.
  • the present inventors have conducted extensive research to solve the above problems and have completed the present invention.
  • the present invention includes the following (1) to (10).
  • the heat exchange layer has a first space therein that extends horizontally, the introduction layer is located below the heat exchange layer, has a second space therein that extends horizontally, and has an introduction flow path or an introduction hole for introducing a refrigerant from the outside into the second space;
  • the discharge layer has a third space therein that extends horizontally, and has a discharge flow path or a discharge hole for discharging the refrigerant inside the third space to the outside, moreover, a flow path ⁇ that connects the second space and the first space and that allows the coolant introduced into the second space to move into the first space; a flow path
  • the introduction layer is located directly below the heat exchange layer, the second space of the introduction layer is not connected to any flow paths other than the introduction flow path and the flow path ⁇ , and does not have any holes other than the introduction hole; a hole as the flow path ⁇ is formed in an upper surface of the second space, or the flow path ⁇ passing through the upper surface of the second space is formed, When the second space is filled with the refrigerant introduced from the outside, the refrigerant passes through the flow path ⁇ and moves into the first space.
  • the discharge layer is located directly below the introduction layer, the introduction layer has a support extending from its lower surface to its upper surface inside the second space, A through hole is formed in the support pillar, forming at least a part of the flow path ⁇ .
  • the chuck according to any one of (1) to (3) above.
  • the discharge layer has an exhaust flow path or an exhaust hole for exhausting the coolant from the third space to the outside.
  • the chuck further includes a flow path ⁇ that connects the second space and the first space and that can move the refrigerant introduced into the second space into the first space, and a flow path ⁇ that connects the first space and the third space and that can move the refrigerant in the first space into the third space, wherein the refrigerant is introduced from the outside into the second space of the introduction layer, passes through the flow path ⁇ , moves into the first space of the heat exchange layer, and cools the wafer and/or the heating layer, and then moves into the third space of the discharge layer and is discharged to the outside.
  • the second chuck of the present invention is a chuck that has a stacked structure of an upper heating layer and a lower cooling layer, and is capable of maintaining a wafer held on its upper surface at a predetermined temperature.
  • the cooling layer has a space inside that extends horizontally, one end of which is located outside the cooling layer, and a pipe that extends into the space of the cooling layer and has multiple outlet holes on its outer surface. The refrigerant introduced from one end of the pipe travels within the pipe and is released from the outlet holes of the pipe into the space of the cooling layer and is stored within the space.
  • FIG. 1 to 6 show preferred embodiments of the first chuck of the present invention, and the first chuck of the present invention is not limited to the embodiments shown in the figures.
  • Fig. 7 shows a preferred embodiment of the second chuck of the present invention, and the second chuck of the present invention is not limited to the embodiment shown in Fig. 7.
  • the heating layer 3 is used so that its upper surface (3s) is horizontal, but the heating layer 3 may also be used so that its upper surface (3s) is not horizontal (for example, vertical).
  • the first chuck 1 of the present invention shown in FIGS. 1 to 6 has an upper cover 11, a heat exchange section 13, an inlet section 15, an outlet section 17, and a lower cover 19, which are stacked.
  • the upper lid 11 and the heat exchange portion 13 are stacked together to form a heat exchange layer 21 having a first space 211 therein that extends horizontally.
  • an introduction layer 23 is formed that is surrounded by the upper surface of the discharge section 17 and the inner surface of the introduction section 15 and has a second space 231 inside that extends horizontally.
  • a discharge layer 25 is formed that is surrounded by the upper surface of the lower lid 19 and the inner surface of the discharge portion 17 and has a third space 251 inside that extends horizontally. It is preferable that the first space 211, the second space 231, and the third space 251 all expand in the horizontal direction when in use. That is, it is preferable that the first zipper 1 of the present invention is arranged so that the first space 211, the second space 231, and the third space 251 expand in the horizontal direction when in use.
  • a hole 153 is formed that penetrates from the upper surface of the introduction portion 15 to the second space 231, but instead of a hole, a flow path may be formed that penetrates from the upper surface of the introduction portion 15 to the second space 231. Also, a flow path that does not pass through the upper surface of the introduction portion 15 but connects the second space 231 to the first space 211 of the heat exchange layer 21 (described later) may be formed, for example, on the side of the first chuck 1 of the present invention.
  • the discharge layer 25 will now be described.
  • the ejection layer 25 is preferably located below the introduction layer 23.
  • the ejection layer 25 is located directly below the introduction layer 23, and the ejection layer 25 and the introduction layer 23 are adjacent to each other.
  • the ejection layer 25 also has a third space 251 therein that extends horizontally.
  • the third space 251 also has a discharge flow path or discharge hole for discharging the refrigerant inside to the outside.
  • the discharge layer 25 of the first chuck 1 of the present invention shown in Figures 1 to 5 it has a straight pipe 60 as a discharge flow path.
  • the groove 135 formed in the upper surface of the heat exchange part 13 is connected to the outlet of the flow path ⁇ .
  • the groove 135 corresponds to the first space 211.
  • the coolant cools the wafer and/or the heating layer 3 while it is mainly present inside the first space 211 .
  • the refrigerant then flows into flow path ⁇ , which is formed by connecting hole 153 formed in the upper surface of introduction portion 15, hole 137 formed in heat exchange unit 13, and through-hole 157 formed in support 159.
  • groove 135 formed in the upper surface of heat exchange unit 13 is connected to the inlet of flow path ⁇ .
  • the refrigerant that has flowed into heat exchange layer 21 from flow path ⁇ flows into flow path ⁇ via groove 135.
  • the refrigerant then moves into the third space 251 of the discharge layer 25 and is discharged to the outside.
  • the materials of the heating layer 3, upper lid 11, heat exchange section 13, inlet section 15, outlet section 17, and lower lid 19 are not particularly limited and may be made of, for example, conventionally known materials. Specifically, they may be made of metals such as aluminum, stainless steel, and copper.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

Le problème à résoudre par la présente invention est de fournir un mandrin qui permet d'obtenir une répartition de température plus uniforme sur une surface supérieure de celui-ci. La solution selon l'invention porte sur un mandrin dans lequel une couche de refroidissement comprend une couche d'échange de chaleur, une couche d'introduction et une couche d'évacuation. La couche d'échange de chaleur comprend un premier espace s'étendant dans une direction horizontale, la couche d'introduction comprend un deuxième espace s'étendant dans la direction horizontale, et la couche d'évacuation comprend un troisième espace s'étendant dans la direction horizontale. Le mandrin comprend également un canal d'écoulement α qui relie le deuxième espace et le premier espace et peut déplacer un fluide frigorigène introduit dans le deuxième espace à l'intérieur du premier espace, et un canal d'écoulement β qui relie le premier espace et le troisième espace et peut déplacer le fluide frigorigène à l'intérieur du premier espace à l'intérieur du troisième espace. Le fluide frigorigène est introduit dans le deuxième espace de la couche d'introduction depuis l'extérieur, passe par le canal d'écoulement α et se déplace vers l'intérieur du premier espace de la couche d'échange de chaleur, après quoi le fluide frigorigène se déplace vers l'intérieur du troisième espace de la couche d'évacuation, puis est évacué vers l'extérieur.
PCT/JP2025/002629 2024-02-21 2025-01-28 Mandrin, sondeur le comprenant et système de test de tranche Pending WO2025177784A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2024024229 2024-02-21
JP2024-024229 2024-02-21

Publications (1)

Publication Number Publication Date
WO2025177784A1 true WO2025177784A1 (fr) 2025-08-28

Family

ID=96847024

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2025/002629 Pending WO2025177784A1 (fr) 2024-02-21 2025-01-28 Mandrin, sondeur le comprenant et système de test de tranche

Country Status (1)

Country Link
WO (1) WO2025177784A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1126564A (ja) * 1997-07-08 1999-01-29 Sumitomo Metal Ind Ltd 静電チャック
JP2003524885A (ja) * 1999-09-29 2003-08-19 東京エレクトロン株式会社 多重領域抵抗ヒータ
JP2020145238A (ja) * 2019-03-04 2020-09-10 日本碍子株式会社 ウエハ載置装置
JP2022161740A (ja) * 2021-04-09 2022-10-21 住友電気工業株式会社 ウエハ保持台

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1126564A (ja) * 1997-07-08 1999-01-29 Sumitomo Metal Ind Ltd 静電チャック
JP2003524885A (ja) * 1999-09-29 2003-08-19 東京エレクトロン株式会社 多重領域抵抗ヒータ
JP2020145238A (ja) * 2019-03-04 2020-09-10 日本碍子株式会社 ウエハ載置装置
JP2022161740A (ja) * 2021-04-09 2022-10-21 住友電気工業株式会社 ウエハ保持台

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