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WO2025177675A1 - Système de traitement de substrat - Google Patents

Système de traitement de substrat

Info

Publication number
WO2025177675A1
WO2025177675A1 PCT/JP2024/043786 JP2024043786W WO2025177675A1 WO 2025177675 A1 WO2025177675 A1 WO 2025177675A1 JP 2024043786 W JP2024043786 W JP 2024043786W WO 2025177675 A1 WO2025177675 A1 WO 2025177675A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate processing
displacement sensor
temperature
substrate
processing system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/JP2024/043786
Other languages
English (en)
Japanese (ja)
Inventor
竜二 大谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of WO2025177675A1 publication Critical patent/WO2025177675A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • An exemplary embodiment of the present disclosure relates to a substrate processing system.
  • Patent Document 1 discloses a technology that uses a distance sensor provided in the substrate holding unit of a substrate transport mechanism to estimate the height of an annular member placed on a mounting table of a substrate processing apparatus.
  • a substrate processing system comprising: a substrate processing chamber; a transfer chamber; and a transfer robot configured to transfer substrates between the substrate processing chamber and the transfer chamber, the transfer robot having an end effector configured to hold the substrate, the end effector having a displacement sensor configured to acquire a distance to an object in the substrate processing chamber, a temperature sensor configured to output the temperature of the displacement sensor, and a temperature adjustment device; and a controller configured to control the temperature adjustment device so that the output of the temperature sensor is within a reference range while the displacement sensor is acquiring the distance.
  • a technology can be provided that suppresses the effects of temperature on a sensing device provided in an end effector.
  • a substrate processing system comprising: a substrate processing chamber; a transfer chamber; and a transfer robot configured to transfer substrates between the substrate processing chamber and the transfer chamber, the transfer robot having an end effector configured to hold the substrate, the end effector having a displacement sensor configured to acquire a distance to an object in the substrate processing chamber, a temperature sensor configured to output the temperature of the displacement sensor, and a temperature adjustment device; and a controller configured to control the temperature adjustment device so that the output of the temperature sensor is within a reference range while the displacement sensor is acquiring the distance.
  • a substrate processing chamber is disposed within the substrate processing chamber and includes a substrate support having a substrate support surface and a ring support surface, and an annular member disposed on the ring support surface to surround a substrate on the substrate support surface, and the displacement sensor is configured to measure a first distance between the displacement sensor and the annular member.
  • a substrate processing chamber is disposed within the substrate processing chamber and includes a substrate support having a substrate support surface and a ring support surface, and an annular member disposed on the ring support surface to surround a substrate on the substrate support surface, and the displacement sensor is configured to measure a first distance between the displacement sensor and the annular member.
  • control unit is configured to control the temperature adjustment device so that the output of the temperature sensor is within a reference range while the displacement sensor is measuring the first distance.
  • control unit is configured to stop movement of the end effector while measuring the first distance.
  • the displacement sensor is configured to measure a second distance between the displacement sensor and the substrate support surface.
  • the displacement sensor is an optical displacement sensor.
  • the temperature control device is positioned near the displacement sensor.
  • the temperature sensor is positioned near the displacement sensor.
  • a substrate processing system comprising: a substrate processing chamber; a transfer chamber; a transfer robot configured to transfer substrates between the substrate processing chamber and the transfer chamber, the transfer robot having an end effector configured to hold the substrate, the end effector having a sensing device configured to acquire information about the inside of the substrate processing chamber, a temperature sensor configured to output the temperature of the sensing device, and a temperature adjustment device; and a control unit configured to control the temperature adjustment device so that the output of the temperature sensor is within a reference range while the sensing device acquires information.
  • the sensing device includes an imaging device.
  • the sensing device includes an optical sensor.
  • control unit is configured to stop movement of the end effector while the sensing device acquires information.
  • the temperature control device includes a Peltier element.
  • the temperature control device is positioned near the sensing device.
  • the temperature sensor is positioned near the sensing device.
  • ⁇ Configuration example of substrate processing system> 1 is a diagram illustrating an example of the configuration of a substrate processing system PS according to one embodiment.
  • the substrate processing system PS includes vacuum transfer modules TM1 and TM2, process modules PM1 to PM12, load lock modules LL1 and LL2, an atmospheric transfer module LM, an aligner AN, a storage SR, and the like.
  • the vacuum transfer modules TM1 and TM2 each have an approximately rectangular shape in a plan view.
  • the process modules PM1 to PM6 are connected to two opposing side surfaces of the vacuum transfer module TM1.
  • Load lock modules LL1 and LL2 are connected to one of the other two opposing side surfaces of the vacuum transfer module TM1, and a path (not shown) for connecting to the vacuum transfer module TM2 is connected to the other side surface.
  • the side of the vacuum transfer module TM1 to which the load lock modules LL1 and LL2 are connected is angled in accordance with the two load lock modules LL1 and LL2.
  • the process modules PM7 to PM12 are connected to two opposing side surfaces of the vacuum transfer module TM2.
  • the vacuum transfer modules TM1 and TM2 each have a vacuum chamber with a vacuum atmosphere, and vacuum transfer robots TR1 and TR2 are located inside.
  • the vacuum chambers of the vacuum transfer modules TM1 and TM2 are an example of a "transfer chamber" in this disclosure.
  • the vacuum transfer robots TR1 and TR2 are configured to be able to rotate, extend, and move up and down freely.
  • the vacuum transfer robots TR1 and TR2 transport objects based on operational instructions output by the control unit CU, which will be described later.
  • the vacuum transfer robot TR1 holds the object with end effectors EF11 and EF12 located at its tip, and transports the object between the load lock modules LL1 and LL2, the process modules PM1 to PM6, and paths (not shown).
  • the vacuum transfer robot TR2 holds the object with end effectors EF21 and EF22 located at its tip, and transports the object between the process modules PM7 to PM12 and paths (not shown).
  • the vacuum transfer robots TR1 and TR2 are examples of the "transfer robot” disclosed herein.
  • the end effectors EF11, EF12, and the end effectors EF21 and EF22 are examples of the "end effectors" disclosed herein.
  • the end effector is also sometimes called a fork or pick.
  • Transported objects include substrates and consumable parts.
  • Substrates are, for example, semiconductor substrates and jig substrates for sensors.
  • Consumable parts are parts that are replaceably installed inside the process modules PM1 to PM12 and are consumed as various processes such as plasma processing are performed inside the process modules PM1 to PM12.
  • Consumable parts include, for example, parts that make up the ring assembly 112 and shower head 13, which will be described later.
  • the process modules PM1 to PM12 each have a processing chamber and a stage (mounting table) located therein. At least one of the process modules PM1 to PM12 may be a plasma processing system (see Figure 2), described below. For example, after a substrate is placed on the stage, at least one of the process modules PM1 to PM12 may reduce the pressure inside, introduce a processing gas, apply RF power to generate plasma, and use the plasma to perform plasma processing on the substrate.
  • the vacuum transfer modules TM1 and TM2 and the process modules PM1 to PM12 are separated by a gate valve G1 that can be opened and closed.
  • the processing chambers of the process modules PM1 to PM12 are an example of the "substrate processing chamber" described herein.
  • Load lock modules LL1 and LL2 are located between the vacuum transfer module TM1 and the atmospheric transfer module LM.
  • Load lock modules LL1 and LL2 have internal pressure variable chambers whose interiors can be switched between vacuum and atmospheric pressure.
  • Load lock modules LL1 and LL2 have stages located inside.
  • the load lock modules LL1 and LL2 When transferring substrates from the vacuum transfer module TM1 to the atmospheric transfer module LM, the load lock modules LL1 and LL2 maintain vacuum inside to receive the substrates from the vacuum transfer module TM1, then increase the pressure inside to atmospheric pressure to transfer the substrates into the atmospheric transfer module LM.
  • the load lock modules LL1 and LL2 and the vacuum transfer module TM1 are separated by a gate valve G2 that can be opened and closed.
  • the load lock modules LL1 and LL2 and the atmospheric transfer module LM are separated by a gate valve G3 that can be opened and closed.
  • the atmospheric transfer module LM is positioned opposite the vacuum transfer module TM1.
  • the atmospheric transfer module LM may be, for example, an EFEM (Equipment Front End Module).
  • the atmospheric transfer module LM is a rectangular parallelepiped atmospheric transfer chamber equipped with an FFU (Fan Filter Unit) and maintained at atmospheric pressure.
  • Two load lock modules LL1 and LL2 are connected to one longitudinal side of the atmospheric transfer module LM.
  • Load ports LP1 to LP4 are connected to the other longitudinal side of the atmospheric transfer module LM.
  • Containers C each containing multiple substrates (for example, 25), are placed on the load ports LP1 to LP4.
  • the containers C may be, for example, FOUPs (Front-Opening Unified Pods).
  • An atmospheric transfer robot TR3, which transports the objects to be transferred, is located within the atmospheric transfer module LM.
  • the atmospheric transfer robot TR3 is configured to be movable along the longitudinal direction of the atmospheric transfer module LM, and is also configured to be able to rotate, extend, retract, and move up and down freely.
  • the atmospheric transfer robot TR3 transfers objects based on operational instructions output by the control unit CU, which will be described later.
  • the atmospheric transfer robot TR3 holds the object with the end effector EF31 located at its tip, and transports the object between load ports LP1 to LP4, load lock modules LL1 and LL2, aligner AN, and storage SR.
  • the aligner AN is connected to one side of the atmospheric transfer module LM along the short side. However, the aligner AN may also be connected to a side of the atmospheric transfer module LM along the long side. The aligner AN may also be provided inside the atmospheric transfer module LM.
  • the aligner AN has a support base, an optical sensor (neither of which are shown), etc.
  • the aligner referred to here is a device that detects the position of the object to be transferred.
  • the support table is a table that can rotate around an axis that extends vertically, and is configured to support a substrate thereon.
  • the support table is rotated by a drive unit (not shown).
  • the drive unit is controlled by the control unit CU, which will be described later.
  • the support table rotates due to the power from the drive unit, the substrate placed on the support table also rotates.
  • the optical sensor detects the edge of the substrate while it rotates. Based on the edge detection results, the optical sensor detects the amount of deviation in the angular position of the substrate's notch (or another marker) relative to a reference angular position, and the amount of deviation in the center position of the substrate relative to the reference position. The optical sensor outputs the amount of deviation in the angular position of the notch and the amount of deviation in the center position of the substrate to the control unit CU (described below). Based on the amount of deviation in the angular position of the notch, the control unit CU calculates the amount of rotation of the rotating support table to correct the angular position of the notch to the reference angular position.
  • the control unit CU controls a drive unit (not shown) to rotate the rotating support table by this amount. This allows the angular position of the notch to be corrected to the reference angular position. Furthermore, the control unit CU controls the position of the end effector EF31 of the atmospheric transfer robot TR3 when receiving the substrate from the aligner AN, based on the amount of deviation in the center position of the substrate, so that the center position of the substrate coincides with a predetermined position on the end effector EF31 of the atmospheric transfer robot TR3.
  • the storage SR is connected to a side surface along the longitudinal direction of the atmospheric transfer module LM. However, the storage SR may also be connected to a side surface along the lateral direction of the atmospheric transfer module LM. The storage SR may also be provided inside the atmospheric transfer module LM. The storage SR stores objects to be transferred.
  • the substrate processing system PS is connected to the control unit CU via a communications interface.
  • part or all of the control unit CU may be included in the substrate processing system PS.
  • the control unit CU may be, for example, a computer.
  • the control unit CU includes a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read Only Memory), auxiliary storage device, etc.
  • the CPU operates based on programs stored in the ROM or auxiliary storage device, and controls each part of the substrate processing system PS.
  • the control unit CU outputs operation instructions to the vacuum transfer robots TR1, TR2, atmospheric transfer robot TR3, etc.
  • the operation instructions include instructions for aligning the end effectors EF11, EF12, EF21, EF22, EF31 that transport the transport object with the transport location of the transport object.
  • Fig. 2 is a diagram illustrating an example of the configuration of the plasma processing system.
  • the plasma processing system includes a plasma processing apparatus 1 and a controller 2.
  • the plasma generation unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space.
  • the plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), or surface wave plasma (SWP), etc.
  • various types of plasma generating units may be used, including alternating current (AC) plasma generating units and direct current (DC) plasma generating units.
  • the AC signal (AC power) used in the AC plasma generating unit has a frequency in the range of 100 kHz to 10 GHz.
  • AC signals include radio frequency (RF) signals and microwave signals.
  • the RF signal has a frequency in the range of 100 kHz to 150 MHz.
  • the control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various processes described in this disclosure.
  • the control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1.
  • the control unit 2 may include a processing unit 2a1, a memory unit 2a2, and a communication interface 2a3.
  • the control unit 2 is realized, for example, by a computer 2a.
  • the processing unit 2a1 may be configured to perform various control operations by reading a program from the memory unit 2a2 and executing the read program. This program may be stored in the memory unit 2a2 in advance, or may be acquired via a medium when needed.
  • the substrate support 11 includes a main body 111 and a ring assembly 112.
  • the main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112.
  • a wafer is an example of a substrate W.
  • the annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a planar view.
  • the substrate W is disposed on the central region 111a of the main body 111
  • the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.
  • the main body 111 includes a base 1110 and an electrostatic chuck 1111.
  • the base 1110 includes a conductive member.
  • the conductive member of the base 1110 may function as a lower electrode.
  • the electrostatic chuck 1111 is disposed on the base 1110.
  • the electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a.
  • the ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may also have the annular region 111b.
  • the showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s.
  • the showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c.
  • the processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c.
  • the showerhead 13 also includes at least one upper electrode.
  • the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.
  • SGIs side gas injectors
  • the second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power).
  • the frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal.
  • the bias RF signal has a frequency lower than the frequency of the source RF signal.
  • the bias RF signal has a frequency in the range of 100 kHz to 60 MHz.
  • the second RF generating unit 31b may be configured to generate multiple bias RF signals having different frequencies.
  • the generated one or more bias RF signals are supplied to at least one lower electrode.
  • at least one of the source RF signal and the bias RF signal may be pulsed.
  • the power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10.
  • the DC power supply 32 includes a first DC generator 32a and a second DC generator 32b.
  • the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal.
  • the generated first DC signal is applied to the at least one lower electrode.
  • the second DC generator 32b is connected to at least one upper electrode and configured to generate a second DC signal.
  • the generated second DC signal is applied to the at least one upper electrode.
  • the first and second DC signals may be pulsed.
  • a sequence of voltage pulses is applied to at least one lower electrode and/or at least one upper electrode.
  • the voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform.
  • a waveform generator for generating a sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode.
  • the first DC generator 32a and the waveform generator constitute a voltage pulse generator.
  • the second DC generator 32b and the waveform generator constitute a voltage pulse generator
  • the voltage pulse generator is connected to at least one upper electrode.
  • the voltage pulses may have positive or negative polarity.
  • the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period.
  • the first and second DC generators 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generator 32a may be provided instead of the second RF generator 31b.
  • the exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10.
  • the exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is adjusted by the pressure regulating valve.
  • the vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.
  • ⁇ Example of end effector configuration> 4 is a diagram illustrating an example of an end effector EF according to an embodiment.
  • the end effector EF is disposed at the tip of a drive mechanism of a transfer robot.
  • the end effector EF may be used as the end effector EF11, EF12, EF21, or EF22 of the substrate processing system shown in FIG. 1. That is, the end effector EF is configured to transfer objects between the vacuum chambers of the vacuum transfer modules TM1 and TM2 shown in FIG. 1 and the processing chambers of the process modules PM1 to PM12 (including the plasma processing chamber 10 shown in FIGS. 2 and 3).
  • the end effector EF has a proximal end 50 and a distal end 52, as shown in FIG. 4.
  • the end effector EF may be connected at the proximal end 50 to a drive mechanism of a transfer robot (e.g., the vacuum transfer robots TR1 and TR2 in FIG. 1, etc.).
  • the drive mechanism includes an articulated arm that is configured to be able to move up and down, rotate, and extend and retract.
  • the drive mechanism enables the end effector EF to perform one or more of the following movements: translation (horizontal movement in the XY plane), lifting and lowering (vertical movement in the Z-axis direction), and rotation (rotation around the X, Y, and Z axes).
  • the object to be transported is placed on the distal end 52 of the end effector EF.
  • the distal end 52 may be configured in a generally U-shape and have two ends 52A, 52B spaced apart from each other.
  • a plurality of pads PD are provided on the upper surface of the distal end 52. The plurality of pads PD contact the lower surface of the object to be transported (e.g., a substrate) and hold the object to be transported.
  • the distal end 52 may be provided with one or more suction holes.
  • the suction holes may be connected to an exhaust device such as a vacuum pump. In this case, the object to be transported is vacuum-sucked to the end effector EF via the suction holes.
  • the end effector EF includes one or more sensing modules 54.
  • the sensing modules 54 may be provided at the distal end 52 of the end effector EF.
  • one or more sensing modules 54 may be provided on one or more of the top, side, and bottom surfaces of the end effector EF.
  • one sensing module 54 may be provided on each of the side surfaces (XZ planes) of the ends 52A and 52B.
  • FIG. 5 is a diagram illustrating an example of the sensing module 54.
  • the sensing module 54 includes a displacement sensor 542, a temperature sensor 544, and a temperature adjustment device 546.
  • Each sensing module 54 is connected to the unit controller UC via a transmission line, which allows for the transmission and reception of various data and the supply of power.
  • the sensing module 54 may include a housing 540.
  • the housing 540 may be separate from the main body of the end effector EF (the body that holds the object to be transported).
  • the displacement sensor 542, temperature sensor 544, and temperature adjustment device 546 may be housed within the housing 540. Note that in one embodiment, the displacement sensor 542, temperature sensor 544, and/or temperature adjustment device 546 may be incorporated into the main body of the end effector EF rather than being located within the housing 540, and configured integrally with the main body.
  • the displacement sensor 542 is configured to acquire the distance to the measurement object.
  • the displacement sensor 542 is an optical displacement sensor. That is, the displacement sensor 542 may be configured to irradiate the measurement object with light and measure the distance to the measurement object. In this case, as shown in FIG. 5, the displacement sensor 542 may be equipped with an optical head 542a that emits measurement light downward.
  • the optical displacement sensor 542 is a confocal chromatic sensor. A confocal chromatic sensor measures the distance to the measurement object based on the wavelength of light focused and reflected on the measurement object. Note that the displacement sensor 542 is not limited to an optical displacement sensor.
  • the displacement sensor 542 may be a displacement sensor of various types, such as a capacitance type, an ultrasonic type, or an eddy current type.
  • the temperature sensor 544 is configured to output the temperature of the displacement sensor 542.
  • the temperature sensor 544 may be positioned near the displacement sensor 542.
  • the temperature adjustment device 546 is configured to adjust the temperature of the displacement sensor 542 based on the output of the temperature sensor 544.
  • the temperature adjustment device 546 may be disposed near the displacement sensor 542.
  • the temperature adjustment device 546 may include a Peltier element. The amount of heat dissipated (heating) and absorbed (cooling) from the temperature adjustment device 546 to the displacement sensor 542 may be adjusted by controlling the polarity and magnitude of the current flowing through the Peltier element.
  • the unit controller UC is configured to control various operations of the displacement sensor 542, the temperature sensor 544, and the temperature adjustment device 546.
  • the unit controller UC may be configured to include a computer equipped with a CPU and memory.
  • the unit controller UC includes a power supply for supplying power to the displacement sensor 542, the temperature sensor 544, and the temperature adjustment device 546.
  • the unit controller UC may be part of the control unit CU (FIG. 1) and/or control unit 2 (FIGS. 2 and 3) described above.
  • the unit controller UC is an example of a "control unit" in the present disclosure.
  • the unit controller UC controls the temperature adjustment device 546 so that the temperature of the displacement sensor 542 output from the temperature sensor 544 falls within a reference range. For example, if the temperature of the displacement sensor 542 output from the temperature sensor 544 is higher than the reference range, the temperature adjustment device 546 cools the displacement sensor 542 or its surroundings. Alternatively, if the temperature of the displacement sensor 542 output from the temperature sensor 544 is lower than the reference range, the temperature adjustment device 546 heats the displacement sensor 542 or its surroundings. This maintains the temperature of the displacement sensor 542 within the reference range. Therefore, even if the displacement sensor 542 is temperature dependent, the distance measurement value measured by the displacement sensor 542 can be prevented from being affected by temperature.
  • the reference range may be set appropriately depending on the temperature dependency of the displacement sensor 542, the required measurement accuracy, etc.
  • the reference range may be ⁇ 5°C, ⁇ 3°C, ⁇ 1°C, ⁇ 0.5°C, ⁇ 0.2°C, or ⁇ 0.1°C of the reference temperature.
  • the reference temperature may be set appropriately depending on the specifications of the displacement sensor 542, the environment in which it is used, etc.
  • the reference temperature may be set appropriately to a temperature between 0°C and 100°C (for example, 25°C, 50°C, or 80°C).
  • 6A and 6B are diagrams illustrating an example of measurement using the end effector EF.
  • the unit controller UC uses the end effector EF to determine the amount of wear of the ring assembly 112 (see FIG. 3) of the plasma processing apparatus 1.
  • the end effector EF is introduced from the transfer chamber into the plasma processing chamber 10 (hereinafter also referred to as "chamber 10") of the plasma processing apparatus 1 (see Figure 3) by the drive mechanism.
  • the unit controller UC controls the temperature adjustment device 546 so that the temperature of the displacement sensor 542 output from the temperature sensor 544 falls within the reference range.
  • the end effector EF may hold a substrate W.
  • the end effector EF may also hold a transfer object other than the substrate W (for example, a substrate for a jig, a dummy substrate, consumable parts such as the ring assembly 112, etc.).
  • the end effector EF does not necessarily have to hold a transfer object.
  • the displacement sensor 542 measures a first distance when the end effector EF has moved onto the ring assembly 112 (hereinafter also referred to as the "first position").
  • the first distance is the distance d1 between the end effector EF and the ring assembly 112.
  • the displacement sensor 542 measures a second distance when the end effector EF has moved onto the electrostatic chuck 1111 (hereinafter also referred to as the "second position").
  • the second distance is the distance d2 between the end effector EF and the electrostatic chuck 1111.
  • the second distance may also be the distance between the end effector EF and a reference wafer on the electrostatic chuck 1111.
  • the end effector EF may move linearly from the first position to the second position by translating the drive mechanism of the transfer robot.
  • the end effector EF may also be rotated around the proximal end 50 by the drive mechanism of the transport robot, thereby moving in an arc from the first position to the second position.
  • the first distance and the second distance may be measured optically.
  • the displacement sensor 542 irradiates white light from the optical head 542a substantially perpendicularly to the horizontal surface 112s of the ring assembly 112.
  • the white light is focused at a different height for each wavelength contained in the white light.
  • the displacement sensor 542 may receive only the light of the wavelength focused on the horizontal surface 112s of the ring assembly 112 as reflected light, and measure the first distance based on that wavelength.
  • the measurement of the second distance may be performed in a similar manner.
  • the unit controller UC controls the temperature adjustment device 546 so that the temperature of the displacement sensor 542 output from the temperature sensor 544 falls within a reference range while the first and second distances are being measured. This maintains the temperature of the displacement sensor 542 within the reference range while the first and second distances are being measured. Therefore, even if the displacement sensor 542 is temperature dependent, the measurement results can be prevented from being affected by the temperature inside the chamber 10. This ensures the measurement accuracy of the displacement sensor 542. If the displacement sensor 542 is temperature dependent, it is possible to correct the measurement results to take this temperature dependency into account. However, if the temperature gradient or temperature change inside the chamber 10 is large, it is difficult to accurately reflect the temperature dependency in the correction. As a result, the measurement accuracy of the displacement sensor 542 may decrease. In this regard, the displacement sensor 542 according to one embodiment maintains the temperature within the reference range during measurement, eliminating the need to correct the measurement results and ensuring measurement accuracy.
  • the unit controller UC may stop the movement of the end effector EF while measuring the first distance and the second distance. This suppresses vibrations caused by the movement of the end effector EF and can prevent a decrease in the measurement accuracy of the displacement sensor 542.
  • the displacement sensor 542 is an optical displacement sensor, the exposure time of light irradiated from the displacement sensor 542 onto the surface of the measurement object can be made longer than when the end effector EF is moved during measurement. This increases the amount of light reflected from the surface of the measurement object and received by the displacement sensor 542, thereby improving the measurement accuracy and resolution of the displacement sensor 542 compared to when the end effector EF is moved during measurement.
  • the end effector EF is more susceptible to the temperature within the chamber 10 than when measurement is performed while the end effector EF is moving.
  • the temperature of the displacement sensor 542 itself is maintained within the standard range, so the measurement accuracy of the displacement sensor 542 can be guaranteed.
  • FIG. 7 is a diagram illustrating another example of the sensing module 54.
  • the sensing module 54 includes a sensing device 548, a temperature sensor 544, and a temperature adjustment device 546.
  • the sensing device 548 is configured to acquire information about the inside of the substrate processing chamber or the transfer chamber.
  • the sensing device 548 may be an imaging device, an optical sensor, or a combination thereof.
  • the imaging device may be configured to capture images of each component of the substrate processing chamber (e.g., the electrostatic chuck 1111, the ring assembly 112, the showerhead 13, etc., shown in FIG. 3 ).
  • One example of the imaging device is a CCD camera.
  • the optical sensor may be, for example, a light intensity sensor.
  • the light intensity sensor may be configured to irradiate each component of the substrate processing chamber with light and measure the intensity of light reflected from the measurement object.
  • the optical sensor may be, for example, the displacement sensor described above.
  • the optical sensor may also have the functions of both a light intensity sensor and a displacement sensor.
  • the temperature sensor 544, temperature adjustment device 545, and unit controller UC shown in FIG. 7 may be configured similarly to the configuration described in FIG. 5. That is, the temperature sensor 544 is configured to output the temperature of the sensing device 548.
  • the temperature adjustment device 546 is configured to adjust the temperature of the sensing device 548 based on the output of the temperature sensor 544.
  • the unit controller UC then controls the temperature adjustment device 546 so that the temperature of the sensing device 548 output from the temperature sensor 544 falls within a reference range during measurement or imaging by the sensing device 548. This keeps the temperature of the sensing device 548 within the reference range. This prevents the sensing device 548 from being affected by the temperature environment in which the end effector EF is located.
  • a substrate processing system comprising:
  • the substrate processing chamber includes: a substrate support disposed within the substrate processing chamber, the substrate support having a substrate support surface and a ring support surface; an annular member disposed on the ring support surface to surround the substrate on the substrate support surface; 2.
  • control unit is configured to control the temperature adjustment device so that the output of the temperature sensor is within a reference range while the displacement sensor is measuring the first distance.
  • control unit 7 The substrate processing system of any one of Supplementary Note 4 to Supplementary Note 6, wherein the control unit is configured to control the temperature adjustment device so that an output of the temperature sensor is within a reference range while the displacement sensor is measuring the second distance.
  • a substrate processing system comprising:
  • Appendix 16 16. The substrate processing system of any one of appendices 13 to 15, wherein the control unit is configured to stop movement of the end effector while the sensing device acquires the information.
  • Appendix 19 19. The substrate processing system of any one of appendix 13 to appendix 18, wherein the temperature sensor is disposed in proximity to the sensing device.
  • REFERENCE SIGNS LIST 1 plasma processing apparatus, 2: control unit, 10: plasma processing chamber, 10s: plasma processing space, 11: substrate support, 112: ring assembly, 54: sensing module, 540: housing, 542: displacement sensor, 544: temperature sensor, 546: temperature control device, 548: sensing device, EF: end effector, PS: substrate processing system

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

L'invention concerne une technique permettant de supprimer l'effet de température sur un dispositif de détection disposé sur un effecteur terminal. À cet effet la présente invention propose un système de traitement de substrat qui comprend : une chambre de traitement de substrat ; une chambre de transport ; un robot de transport configuré pour transporter un substrat entre la chambre de traitement de substrat et la chambre de transport ; et une unité de commande. Le robot de transfert comprend un effecteur terminal configuré pour maintenir le substrat. L'effecteur terminal comprend : un capteur de déplacement configuré pour acquérir une distance par rapport à un objet dans la chambre de traitement de substrat ; un capteur de température configuré pour délivrer la température du capteur de déplacement ; et un dispositif de régulation de température. L'unité de commande est configurée pour commander le dispositif de régulation de température de telle sorte que la sortie du capteur de température se trouve dans une plage de référence tandis que le capteur de déplacement acquiert la distance.
PCT/JP2024/043786 2024-02-21 2024-12-11 Système de traitement de substrat Pending WO2025177675A1 (fr)

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JP2001102428A (ja) * 1999-08-25 2001-04-13 Samsung Electronics Co Ltd 加工チャンバにまたは加工チャンバからウェーハを移送するためのウェーハ搬送装置
US20040230341A1 (en) * 2003-05-12 2004-11-18 Applied Materials, Inc. Method and apparatus for determining a substrate exchange position in a processing system
JP4398297B2 (ja) * 2004-04-28 2010-01-13 オリンパス株式会社 微小部品貼り合わせ装置及び微小部品貼り合わせ方法
JP2017191124A (ja) * 2016-04-11 2017-10-19 株式会社ニコン 基板保持部材、搬送装置及び方法、露光装置及び方法、露光システム、並びにデバイス製造方法
JP2018523307A (ja) * 2015-07-13 2018-08-16 ブルックス オートメーション インコーポレイテッド オンザフライ方式の自動ウェハセンタリング方法および装置
JP2022515028A (ja) * 2018-12-20 2022-02-17 アクセリス テクノロジーズ， インコーポレイテッド サーモカップル埋込エンドエフェクタを用いた半導体処理装置のためのウェハソーク温度のリードバックおよび制御
JP2022174626A (ja) * 2021-05-11 2022-11-24 東京エレクトロン株式会社 基板処理システム及び環状部材の高さ推定方法
JP2023121729A (ja) * 2022-02-21 2023-08-31 東京エレクトロン株式会社 測定方法、測定器及び測定システム

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001102428A (ja) * 1999-08-25 2001-04-13 Samsung Electronics Co Ltd 加工チャンバにまたは加工チャンバからウェーハを移送するためのウェーハ搬送装置
US20040230341A1 (en) * 2003-05-12 2004-11-18 Applied Materials, Inc. Method and apparatus for determining a substrate exchange position in a processing system
JP4398297B2 (ja) * 2004-04-28 2010-01-13 オリンパス株式会社 微小部品貼り合わせ装置及び微小部品貼り合わせ方法
JP2018523307A (ja) * 2015-07-13 2018-08-16 ブルックス オートメーション インコーポレイテッド オンザフライ方式の自動ウェハセンタリング方法および装置
JP2017191124A (ja) * 2016-04-11 2017-10-19 株式会社ニコン 基板保持部材、搬送装置及び方法、露光装置及び方法、露光システム、並びにデバイス製造方法
JP2022515028A (ja) * 2018-12-20 2022-02-17 アクセリス テクノロジーズ， インコーポレイテッド サーモカップル埋込エンドエフェクタを用いた半導体処理装置のためのウェハソーク温度のリードバックおよび制御
JP2022174626A (ja) * 2021-05-11 2022-11-24 東京エレクトロン株式会社 基板処理システム及び環状部材の高さ推定方法
JP2023121729A (ja) * 2022-02-21 2023-08-31 東京エレクトロン株式会社 測定方法、測定器及び測定システム

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