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WO2025174574A1 - Dispositifs de chauffage à double zone pour socles métalliques - Google Patents

Dispositifs de chauffage à double zone pour socles métalliques

Info

Publication number
WO2025174574A1
WO2025174574A1 PCT/US2025/013197 US2025013197W WO2025174574A1 WO 2025174574 A1 WO2025174574 A1 WO 2025174574A1 US 2025013197 W US2025013197 W US 2025013197W WO 2025174574 A1 WO2025174574 A1 WO 2025174574A1
Authority
WO
WIPO (PCT)
Prior art keywords
heater
baseplate
substrate support
turn
quadrants
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/US2025/013197
Other languages
English (en)
Inventor
Pratik SANKHE
Jaykumar Atulbhai BHALODIA
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of WO2025174574A1 publication Critical patent/WO2025174574A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Definitions

  • the present disclosure relates generally to substrate processing systems and more particularly to dual zone heaters for metallic pedestals used to process substrate in substrate processing systems.
  • a tool comprises multiple process modules (PMs). Each PM comprises multiple stations. Substrates are processed in the stations using different processes such as deposition and etching processes.
  • Each station comprises a substrate support (pedestal) on which a substrate is placed during processing.
  • the pedestal comprises a baseplate and a stem. The stem is connected to a center region of the baseplate. The substrate is placed on the baseplate of the pedestal during processing.
  • Different processes such as atomic layer deposition (ALD), plasma enhanced ALD (PEALD), thermal ALD (T-ALD), chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), and so on may be performed on the substrates in different stations.
  • ALD atomic layer deposition
  • PEALD plasma enhanced ALD
  • T-ALD thermal ALD
  • CVD chemical vapor deposition
  • PECVD plasma enhanced CVD
  • a substrate support for processing a substrate comprises a baseplate, a first heater arranged in a first portion of the baseplate, and a second heater arranged in a second portion of the baseplate and partially arranged in the first portion of the baseplate.
  • the second heater surrounds the first heater, and the second portion surrounds the first portion.
  • the baseplate is cylindrical
  • the first portion is circular and comprises a center of the baseplate
  • the second portion is annular and surrounds the first portion
  • the first portion and the second portion are concentric.
  • the first heater and the second heater are separately controlled.
  • the first heater and the second heater comprise curved and linear portions.
  • first heater and the second heater comprise portions extending in clockwise and counter-clockwise directions.
  • the baseplate is cylindrical and comprises four quadrants
  • the first heater comprises a semicircular portion extending through first and second quadrants of the four quadrants.
  • the baseplate is cylindrical and comprises four quadrants, and the first heater comprises two turns in each of the four quadrants.
  • the baseplate is cylindrical and comprises four quadrants Q1 , Q2, Q3, and Q4; the first heater comprises two terminals in Q1 and Q2; and the second heater comprises two terminals in Q3 and Q4.
  • the second heater comprises two semicircular portions that surround the first heater, and a circular portion that is connected to the two semicircular portions and that surrounds the two semicircular portions.
  • first heater and the second heater comprise heating elements having a D-shaped cross-section.
  • the first heater and the second heater comprise heating elements having a circular cross-section.
  • FIG. 4 shows a layout of a substrate relative to the two heaters when the substrate is placed on the baseplate of the metallic pedestal of FIG. 2 according to the present disclosure
  • Some metallic pedestals comprise a heater to heat the substrate.
  • the heater is disposed in the baseplate of the pedestal.
  • the heater is designed with the expectation to uniformly heat the substrate.
  • a single heater cannot uniformly heat the substrate, which causes temperature non-uniformities across the substrate.
  • temperatures at some of the regions of the substrate differ from the temperature of the rest of the substrate. The temperature difference is more pronounced in outer regions of the substrate due to heat lost from the baseplate to the station walls through radiation.
  • the inner and outer heaters are independently controlled.
  • the inner heater maintains a temperature profile of the substrate.
  • the outer heater compensates for the heat lost from the baseplate to the station walls through radiation.
  • the inner heater comprises segments (e.g., arcuate, linear, curved portions, etc.) that are designed to uniformly heat the substrate as described below in detail.
  • Using two independently controlled heater zones allows changing the amount of power supplied to the outer heater and the inner heater independently of each other.
  • the amount of power supplied to the outer heater can be changed to compensate for varying heat losses through the edge of the pedestal due to changes in emissivity of the pedestal over time.
  • the amount of power supplied to the inner heater can be changed separately and independently of the power supplied to the outer heater to maintain the temperature profile of the substrate.
  • the present disclosure provides a dual zone heater system for a metallic pedestal in which geometries of heater coils in the two heater zones are optimized for achieving minimum temperature difference (delta) and hence maximum temperature uniformity across the substrate.
  • the inner heater zone directly impacts the temperature profile of the substrate.
  • the outer heater zone compensates for the heat loss to the station walls through radiation.
  • the two heater zones improve the temperature uniformity across the substrate.
  • FIG. 1 An example of a substrate processing system in which a metallic pedestal comprises a dual zone heater system of the present disclosure is shown and described with reference to FIG. 1 .
  • the geometries of the two heaters are shown and described in detail with reference to FIGS. 2-6C.
  • Examples of embedding the two heaters in the metallic pedestal are shown and described with reference to FIGS. 7A and 7B.
  • a system and method for independently controlling the power supplied to the two heaters are shown and described with reference to FIGS. 8A and 8B.
  • the station 112 comprises a pedestal (also called a substrate support) 114 and a showerhead 116.
  • the pedestal 114 is made of a metallic material such as an alloy of aluminum.
  • the pedestal 114 comprises a base portion (also called a baseplate) 118 and a stem portion (also called a stem) 120.
  • the baseplate 118 and the stem 120 are cylindrical.
  • the stem 120 has a smaller diameter than the baseplate 118.
  • the stem 120 is coupled to a center portion of the baseplate 118.
  • the stem 120 extends from base portion 118 and is coupled to the bottom of the station 112.
  • a substrate 124 is arranged on a top surface of the baseplate 118 of the pedestal 114.
  • the baseplate 118 comprises a dual heater system.
  • the dual heater system is explained below in detail with reference to FIGS. 2-7B.
  • the dual heater system comprises an inner heater 162-1 and an outer heater 162-2.
  • the inner and outer heaters 162-1 , 162-2 heat the base portion 118 of the pedestal 114, which in turn heats the substrate 124.
  • the dual heater system further comprises an inner temperature sensor 164-1 and two identical outer temperature sensors 164-2, 164-3 disposed in the baseplate 118 of the pedestal 114.
  • the inner temperature sensor 164-1 is arranged at the center of the baseplate 118.
  • the two outer temperature sensors 164-2, 164-3 are embedded in the baseplate 118 between the inner and outer heaters 162-1 , 162-2.
  • the two outer temperature sensors 164-2, 164-3 are identical for redundancy as explained below.
  • the temperature sensors 164-1 , 164-2, 164-3 sense temperatures of different regions of the pedestal 114 and provide feedback for controlling the inner and outer heaters 162-1 , 162-2.
  • the connections of power supplies to the inner and outer heaters 162-1 , 162-2 and the connections to the temperature sensors 164-1 , 164-2, 164-3 are routed through the stem 120.
  • the connections to the two outer temperature sensors 164-2, 164-3 are separate as shown on the connecting line.
  • the pedestal 114 may utilize any or no clamping scheme to hold the substrate 124 on the top surface of the baseplate 118 of the pedestal 114.
  • the substrate 124 may simply rest on the top surface of the baseplate 118 of the pedestal 114 without employing any clamping scheme to clamp the substrate 124 to the pedestal 114.
  • the substrate 124 can be clamped to the top surface of the baseplate 118 of the pedestal 114 using a clamping mechanism such as vacuum clamping.
  • the pedestal 114 can use other types of clamping mechanism.
  • Other types of clamping mechanisms include mechanical clamping, mesas (small miniature contact areas or MCAs) disposed on the top surface of the baseplate clamping scheme used, the pedestal 114 with the substate 124 can be moved by an actuator 121 close to the bottom of the showerhead 116.
  • the pedestal 114 also comprises a plurality (e.g., 3) lift pins used to lift and lower the substrate 124. The lift pins pass through bores (holes, shown in FIGS. 2-7B) in the baseplate 118 of the pedestal 114.
  • the showerhead 116 comprises a base portion (also called a baseplate) 126 and a stem portion (or stem) 128.
  • the baseplate 126 of the showerhead 116 is generally cylindrical.
  • the baseplate 126 of the showerhead 116 is greater than or equal to a diameter of the substrate 124.
  • the stem 128 of the showerhead 116 is also generally cylindrical.
  • the stem 128 of the showerhead 116 is of a smaller diameter than the baseplate 126 of the showerhead 116.
  • the stem 128 of the showerhead 116 extends from the baseplate 126 of the showerhead 116.
  • the stem 128 of the showerhead 116 is attached to a top plate of the station 112. While the showerhead 116 is shown as a chandelier style showerhead comprising the stem 128 that is attached to the top plate of the station 112, the showerhead 116 can be of any other type (e.g., flush-mounted to the top plate of the station 112).
  • the stem 128 of the showerhead 116 receives various gases (e.g., process gases, vaporized precursors, purge gases, cleaning gases, etc.) from a gas delivery system 150 via a manifold 152.
  • the baseplate 126 of the showerhead 116 comprises a faceplate comprising through holes or slots (not shown) through which the gases are introduced into the station 112. While not shown, the baseplate 126 of the showerhead 116 may also comprise a heater to heat the gases, gas mixtures, and/or the vaporized precursors being introduced into the station 112 through the showerhead 116. Additionally, the baseplate 126 of the showerhead 116 may also comprise a temperature sensor 168 to sense the temperature of the showerhead 116.
  • the substrate processing system 100 comprises the gas delivery system 150.
  • the gas delivery system 150 comprises gas sources 154, valves 156, and mass flow controllers (MFCs) 158.
  • the gas sources 154 supply various gases such as process gases, inert gases (also called purge gases, edge gases, carrier gases), cleaning gases, etc.
  • the valves 156 are connected to the gas sources 154 and the MFCs 158.
  • the valves 156 can be controlled to supply the gases from the gas sources 154 to the MFCs 158.
  • the MFCs 158 regulate the flow of the gases to the manifold 152.
  • the gases are supplied through the manifold 152 to the showerhead 116.
  • the substrate processing system 100 comprises another delivery system configured to deliver vaporized precursors via respective valves, which are collectively shown as vaporized precursors and valves 151.
  • the vaporized precursors and valves 151 deliver vaporized precursors to the manifold 152.
  • the manifold 152 supplies the gases or gas mixtures from the gas delivery system 150 and/or the vaporized precursors from the vaporized precursors and valves 151 to the showerhead 116.
  • the gas delivery system 150 and the vaporized precursors and valves 151 can supply different chemistries to the showerhead 116.
  • the substrate processing system 100 further comprises a radio frequency (RF) power supply 160.
  • RF radio frequency
  • the RF power supply 160 supplies RF power to the showerhead 116 during processing of the substrate 124 and during cleaning of the station 112 with the pedestal 1 14 being grounded or floating. While not shown, in some applications, the RF power supply 160 supplies RF power to the pedestal 114 during processing of the substrate 124 and during cleaning of the station 112 with the showerhead 116 being grounded or floating.
  • the RF power excites the gases (e.g., process gases, vaporized precursors, cleaning gases, etc.) introduced into the station 112 through the showerhead 116 to generate plasma between the showerhead 116 and the pedestal 114.
  • the plasma can be used to process the substrate 124 and to clean various components within the station 112 (e.g., the pedestal 114, sidewalls of the station 112, and so on).
  • the substrate processing system 100 further comprises a vacuum pump 172 and valves 170.
  • a vacuum pump 172 When vacuum clamping is used to clamp the substrate 124 to the pedestal 114, the vacuum pump 172 creates vacuum on the top surface of the pedestal 114.
  • the vacuum pump 172 also evacuates gases and reactants from the station 112.
  • the vacuum pump 172 also maintains pressure (e.g., vacuum) in the station 112 during processing of the substrate 124.
  • the substrate processing system 110 further comprises a controller 180.
  • the controller 180 controls the valves 156 and 170, the MFCs 158, the heaters in the pedestal 114 and the showerhead 116, the actuator 121 , the RF power supply 160, and the vacuum pump 172.
  • the controller 180 monitors the temperatures of the pedestal 114 and the showerhead 116 using the temperature sensors 164-1 , 162-2, 164-3 in the pedestal 114 and the temperature sensor 168 in the showerhead 116.
  • the controller 180 controls the temperatures of the pedestal 114 and the showerhead 116 by controlling the heaters in the pedestal 114 and the showerhead 116.
  • the substrate processing system 100 may also comprise a cooling system that supplies a coolant to cooling channels in the pedestal 114 and the showerhead 116.
  • the controller 180 controls the supply of the coolant to the cooling channels in the pedestal 114 and the showerhead 116 to control the temperatures of the pedestal 114 and the showerhead 116.
  • the inner and outer heaters 162-1 , 162-2 may be arranged slightly vertically offset from each other in the baseplate 118.
  • the inner and outer heaters 162-1 , 162-2 may lie in two different planes that are parallel to each other and that are also parallel to the planes of the baseplate 118 and the substrate 124. Regardless of the arrangement of the inner and outer heaters 162-1 , 162-2, the geometries of the inner and outer heaters 162-1 , 162-2 are as described below.
  • the design (i.e., geometry) of the inner and outer heaters 162-1 , 162-2 is symmetrical around only one diameter D1 of the baseplate 118 as described below.
  • the right and left halves of the inner and outer heaters 162-1 , 162-2 are mirror images of each other around only one diameter D1 of the baseplate 118.
  • the design (i.e., geometry) of the inner and outer heaters 162-1 , 162-2 is described below in detail with refence to subsequent figures.
  • the locations of the temperature sensors 164-1 , 164-2, 164-3 relative to the inner and outer heaters 162-1 , 162-2 are also described below in detail with refence to subsequent figures. [0067] FIG.
  • FIG. 3 shows inner and outer zones 200-1 , 200-2 of the baseplate 118 in which the inner and outer heaters 162-1 , 162-2 are embedded.
  • the inner and outer zones 200-1 , 200-2 are shown by separate shaded areas for illustrative purposes.
  • the boundary between the inner and outer zones 200-1 , 200-2 is schematically shown.
  • the inner and outer zones 200-1 , 200-2 are not thermally isolated from each other.
  • the inner zone 200-1 is circular.
  • the inner zone 200-1 extends from a center of the baseplate 118 to a first radial distance r1.
  • the radial distance r1 is about 2/3 rd the radius R of the baseplate 118.
  • r1 is 60-80% of R.
  • the outer zone 200-2 extends from a second radial distance r2 from the center of the baseplate 118 to the OD of the baseplate 118. r2 > r1 .
  • the outer zone 200-2 is annular.
  • An inner diameter (ID) of the outer zone 200-2 is 2*r2.
  • An OD of the outer zone 200-2 is the same as the OD of the baseplate 118.
  • the outer zone 200-2 surrounds the inner zone 200-1.
  • the inner and outer zones 200-1 , 200-2 are concentric.
  • the outer heater 162-2 is partially embedded in the outer zone 202-2 of the baseplate 118 and partially embedded in the inner zone 200-1 of the baseplate 118.
  • the outer heater 162- 2 is generally circular.
  • the outer zone 200-2 can comprise the entire region of the baseplate 118 between r1 and the OD of the baseplate 118.
  • the outer temperatures sensors 164-2, 164-3 lie in the outer zone 200-2.
  • the OD of the outer zone 200-2 is the OD of the baseplate 118. Regardless of whether the ID of the outer zone 200-2 is greater than or equal to 2*r1 , the outer zone 200-2 surrounds the inner zone 200-1 , and the geometries of the inner and outer heaters 162-1 , 162-2 remain the same as described herein.
  • FIG. 4 shows a layout of the substrate 124 relative to the inner and outer heaters 162-1 , 162-2 when the substrate 124 is placed on the baseplate 118 of the pedestal 114 of FIG. 2.
  • a diameter of the substrate 124 is greater than the diameter 2*r1 of the inner zone 200-1.
  • the diameter of the substrate 124 is less than or equal to the ID 2*r2 of the outer zone 200-2.
  • the inner zone 200-1 and the inner heater 162-1 are fully covered by the substrate 124.
  • the outer zone 200-2 lies outside the diameter of the substrate 124.
  • the diameter of the substrate 124 is equal to the diameter 2*r1 of the inner zone 200-1 .
  • the diameter of the substrate 124 is equal to the ID 2*r2 of the outer zone 200-2.
  • the inner zone 200-1 and the inner heater 162-1 are fully covered by the substrate 124.
  • the outer zone 200-2 lies outside the diameter of the substrate 124.
  • the stem 120 does not cause cold spots in the region of the baseplate 118 shown by the circle of radius r3. Consequently, the cold spots in the corresponding region of the substrate 124 are also minimized or eliminated.
  • the baseplate 118 comprises lift pin holes 190-1 , 190-2, 190-3 (collectively called the lift pin holes 190).
  • Portions of the inner heater 162-1 are routed around the lift pin holes 190as shown.
  • the proximity of the portions of the inner heater 162-1 to the lift pin holes 190 minimizes or eliminates formation of cold spots on the substrate 124 due to the lift pin holes 190.
  • the proximity of the portions of the inner heater 162-1 to the lift pin holes 190 minimizes or eliminates formation of cold spots in regions of the substrate 124 that lies directly above the lift pin holes 190.
  • FIGS. 6A-6C are the same as FIGS. 2 and 3 except that the inner and outer zones are not shaded in FIG. 6A and are omitted in FIGS. 6B and 6C.
  • Some of the reference numerals used to identify elements in FIGS. 2 and 3 are omitted in FIGS. 6A-6C to reduce crowding.
  • some of the reference numerals used to identify elements in FIGS. 2, 3, and 6A are omitted in FIGS. 6B and 6C to reduce crowding.
  • the indications of the substrate 124 and the stem 120 shown in FIGS. 4 and 5 are also omitted in FIGS.
  • FIGS. 6B and 6C show additional geometric references (e.g., angles) used to describe the geometries of the inner and outer heaters 162-1 , 162-2.
  • the turns are curved portions of the inner and outer heaters 162-1 , 162-2 that change the direction of layout of the inner and outer heaters 162-1 , 162-2.
  • the baseplate 118 of the pedestal 114 is divided into four quadrants.
  • the four quadrants are labeled as Q1 , Q2, Q3, and Q4 similar to the quadrants used in a Cartesian plane.
  • a square 210 encloses the baseplate 118 of the pedestal 114. Diagonals of the square 210 bisect the four quadrants into two 45-degree portions (halves).
  • the baseplate 118 of the pedestal 114 is analogized to a dial of a circular analog clock with the hour markers 1 -12. Diametric lines are drawn to show twelve 30-degree portions of the baseplate 118 of the pedestal 114. The diametric lines divide the four quadrants into three 30-degree portions.
  • the baseplate 118 of the pedestal 114 is divided into the four quadrants using the diameter D1 around which the inner and outer heaters 162-1 , 162-2 are symmetrical and the diameter D2 that is perpendicular to the diameter D1.
  • the diameter D1 is the only diameter of the base plate 118 that is perpendicular to and bisects a line joining the locations of the two outer temperature sensors 164-2, 164-3.
  • the inner temperature sensor 164-1 located at the center of the baseplate 118 lies at the intersection of the diameters D1 and D2.
  • the two outer temperature sensors 164-2, 164-3 lie on either side of the diameter D1 in the fourth and third quadrants Q4 and Q3, respectively.
  • the diameters D1 and D2 bisect opposite sides of the square 210 that surrounds the baseplate 118 of the pedestal.
  • the diameter D1 connects the hour markers 12 and 6
  • the diameter D2 connects the hour markers 9 and 3.
  • the first quadrant Q1 lies between the hour markers 12 and 3.
  • the fourth quadrant Q4 lies between the hour markers 3 and 6.
  • the third quadrant Q3 lies between the hour markers 6 and 9.
  • the second quadrant Q2 lies between the hour markers 9 and 12.
  • the inner heater 162-1 comprises many portions.
  • the inner heater 162-1 comprises an arcuate portion, multiple linear portions, multiple curved portions, and multiple turns, which are described below in detail.
  • the arcuate portion lies in quadrants Q1 and Q2, and two turns lie in each of the quadrants Q1 through Q4 as described below in detail.
  • the multiple portions of the inner heater 162-1 have geometries described below that are designed to uniformly heat the inner zone 200-1 of the baseplate 118 without forming hot spots or cold spots in the baseplate 118. Accordingly, the substrate 124, which lies mostly over the inner zone 200-1 , is also uniformly heated without hot spots or cold spots as described below in detail.
  • the inner heater 162-1 comprises first and second terminals 250 and 252 (shown in FIG. 2).
  • the controller 180 supplies power to the first and second terminals 250 and 252 via power supply lines routed through the stem 120 of the pedestal 114.
  • the first and second terminals 250 and 252 lie in a center portion of the baseplate 118.
  • the first and second terminals 250 and 252 lie on right and left sides of the diameter D in quadrants Q1 and Q2, respectively.
  • a first portion 254 of the inner heater 162-1 extends linearly from the first terminal 250.
  • the first portion 254 extends away from the center portion of the baseplate 118 and extends outwards into the inner zone 200-1.
  • the first portion 254 extends parallel to the diameter D1 towards the 12 O’clock position (see FIG. 6C).
  • the first portion 254 is linear and lies in quadrant Q1 .
  • the inner heater 162-1 comprises a first turn 256.
  • the first turn 256 turns the inner heater 162-1 clockwise.
  • the first turn 256 turns the inner heater 162-1 away from the center portion of the baseplate 118, away from the diameter D1 , and towards the diameter D2.
  • the first turn 256 turns the inner heater 162-1 inwards into the inner zone 200-1.
  • the first portion 254 and the first turn 256 lie within one half of the quadrant Q1 (i.e., within 45 degrees from the diameter D1 ; see FIG. 6B).
  • the first portion 254 and the first turn 256 lie between 12 O’s clock and 1 O’clock positions (see FIG. 6C).
  • a second portion 258 of the inner heater 162-1 that extends through the quadrant Q1 and into the quadrant Q4.
  • the second portion 258 is curved and comprises first and second sub-portions.
  • the first sub-portion of the second portion 258 extends from the end of the first turn 256.
  • the first sub-portion of the second portion 258 curves radially inwards into the quadrant Q1 towards the first portion 254.
  • the first sub-portion of the second portion 258 curves towards the diameters D1 and D2 and towards the center portion of the baseplate 118 until the first sub-portion intersects the diameter D2.
  • the first portion 254, the first turn 256, and the first sub-portion of the second portion 258 lie in quadrant Q1 .
  • the first portion 254, the first turn 256, and most of the first sub-portion of the second portion 258 lie within one half of the quadrant Q1 (i.e., within 45 degrees from the diameter D1 ; see FIG. 6B).
  • the first portion 254, the first turn 256, and most of the first sub-portion of the second portion 258 lie between 12 O’clock and 2 O’clock positions (see FIG. 6C).
  • the second sub-portion of the second portion 258 extends from the point of intersection at which the first sub-portion of the second portion 258 intersects the diameter D2 (i.e., from the first sub-portion of the second portion 258).
  • the second subportion of the second portion 258 extends the inner heater 162-1 into the quadrant Q4.
  • the second sub-portion of the second portion 258 curves radially outwards into the quadrant Q4.
  • the second sub-portion of the second portion 258 extends away from the center portion of the baseplate 118 and away from the first and second diameters into the quadrant Q4.
  • the second sub-portion of the second portion 258 lies on the opposite side of the diameter D2 relative to the first sub-portion of the second portion 258.
  • the inner heater 162-1 comprises a second turn 260.
  • the second turn 260 turns counter-clockwise.
  • the second turn 260 turns the inner heater 162-1 away from the center portion of the baseplate 118.
  • the second turn 260 turns away from the diameter D1 and towards the diameter D2.
  • the second turn 260 turns the inner heater 162-1 outwards into the inner zone 200-1.
  • the second turn 260 lies in the quadrant Q4. Most of the second turn 260 lies within one half of the quadrant Q4 (i.e., within 45 degrees from the diameter D1 ; see FIG. 6B).
  • a third portion 262 of the inner heater 162-1 extends linearly inwards towards the center portion of the baseplate 118, towards the diameters D1 and D2, and towards the intersection of the second portion 258 with the diameter D2.
  • the third portion 262 extends at nearly 45 degrees relative to the diameters D1 and D2 (see FIG. 6B). Most of the third portion 262 lies within one half of the quadrant Q4 (i.e., within 45 degrees from the diameter D2; see FIG. 6B).
  • the second sub-portion of the second portion 258, the second turn 260, and the third portion 262 lie in the quadrant Q4.
  • the second sub-portion of the second portion 258, the second turn 260, and the third portion 262 of the inner heater 162-1 lie between 6 O’clock and 4 O’clock positions (see FIG. 6C).
  • the inner heater 162-1 comprises a fourth turn 266.
  • the fourth turn 266 turns the inner heater 162-1 counter-clockwise.
  • the fourth turn 266 turns away from the center portion of the baseplate 118.
  • the fourth turn 266 turns away from the diameter D1 and towards the diameter D2.
  • the fourth turn 266 turns the inner heater 162-1 outwards into the inner zone 200-1.
  • the fourth turn 266 lies in the quadrant Q4.
  • the fourth turn 266 lies within one half of the quadrant Q4 (i.e., within 45 degrees from the diameter D2; see FIG. 6B).
  • the fourth turn 266 lies between 3 O’clock and 4 O’clock positions (see FIG. 6C).
  • the inner heater 162-1 comprises a fifth turn 270.
  • the fifth turn 270 turns the inner heater 162-1 clockwise.
  • the fifth turn 270 turns towards the center portion of the baseplate 118.
  • the fifth turn 270 turns towards the diameters D1 and D2.
  • the fifth turn 270 turns the inner heater 162-1 inwards into the inner zone 200-1 .
  • the fifth turn 270 lies in the quadrant Q3.
  • the fifth turn 270 lies within one half of the quadrant Q3 (i.e., within 45 degrees from the diameter D2; see FIG. 6B).
  • the fifth turn 270 lies between 9 O’clock and 8 O’clock positions (see FIG.
  • the inner heater 162-1 comprises a sixth turn 272.
  • the sixth turn 272 turns the inner heater 162-1 counter-clockwise.
  • the sixth turn 272 turns towards the center portion of the baseplate 1 18.
  • the sixth turn 272 turns towards the diameters D1 and diameter D2.
  • the sixth turn 272 turns the inner heater 162-1 inwards into the inner zone 200-1.
  • the sixth turn 272 intersects the diameter D2 at both ends of the sixth turn 272.
  • Most of the sixth turn 272 lies in the quadrant Q2.
  • Most of the sixth turn 272 lies within one half of the quadrant Q2 (i.e., within 45 degrees from the diameter D2; see FIG. 6B).
  • Most of the sixth turn 272 lies between 9 O’clock and 10 O’clock positions (see FIG. 6C).
  • a fourth portion 274 of the inner heater 162-1 extends linearly outwards away from the center portion of the baseplate 118 and away from the diameters D1 and D2.
  • the fourth portion 274 extends outwards into the quadrant Q3.
  • the fourth portion 274 extends at nearly 45 degrees relative to the diameters D1 and D2 (see FIG. 6B). Most of the fourth portion 274 lies within one half of the quadrant Q3 (i.e., within 45 degrees from the diameter D2; see FIG. 6B).
  • the fifth portion 278 is curved and comprises first and second sub-portions.
  • the first sub-portion of the fifth portion 278 extends from the end of the seventh turn 276.
  • the first sub-portion of the fifth portion 278 curves radially inwards towards the center portion of the baseplate 118, towards the diameters D1 and D2, that interests the diameter D2.
  • the first sub-portion of the fifth portion 278 extends the inner heater 162-1 into the quadrant Q2.
  • the fifth turn 270, the fourth portion 274, the seventh turn 276, and the first sub-portion of the fifth portion 278 lie in the quadrant Q3. Most of the seventh turn 276 and the first subportion of the fifth portion 278 lie within one half of the quadrant Q3 (i.e., within 45 degrees from the diameter D1 ; see FIG. 6B).
  • the fourth portion 274, the seventh turn 276, and the first sub-portion of the fifth portion 278 lie between 6 O’clock and 8 O’clock positions (see FIG. 6C).
  • the inner heater 162-1 comprises an eighth turn 280.
  • the eighth turn 280 turns the inner heater 162-1 clockwise.
  • the eighth turn 280 turns towards the center portion of the baseplate 118.
  • the eighth turn 280 turns towards the diameters D1 and D2.
  • the eighth turn 280 turns the inner heater 162-1 inwards into the inner zone 200-1.
  • the eighth turn 280 lies in the quadrant Q2.
  • the eighth turn 280 lies within one half of the quadrant Q2 (i.e., within 45 degrees from the diameter D1 ; see FIG. 6B).
  • the eighth turn 280 lies between 11 O’clock and 12 O’clock positions (see FIG. 6C).
  • portions of the inner heater 162-1 that lie near the center of the baseplate 118 of the pedestal also cover the region of the baseplate 118 where the stem 120 of the pedestal 114 is connected to the baseplate 118 of the pedestal 114.
  • portions of elements 254, 258, 264, 278, 272, 282 lie within the circle of radius r3, which represents the region of the baseplate 118 where the stem 120 contacts the baseplate.
  • the portions of elements 254, 258, 264, 278, 272, 282 heat the region of the baseplate 118 within the circle of radius r3 from where the stem 120 sink heat from the baseplate.
  • a second portion 306 of the outer heater 162- 2 extends outwards, at an acute angle away from the diameter D1 , and into the outer zone 200-2.
  • the second portion 306 is also linear.
  • the second portion 306 lies partially in the inner zone 200-1 and also partially in the outer zone 200-2.
  • the second portion 306 lies in the quadrant Q4.
  • the second portion 306 lies within a half portion of the quadrant Q4 that is adjacent to the diameter D1 (see FIG. 6B).
  • the second portion 306 extends towards the 5 O’clock position (see FIG. 6B).
  • the second portion 306 lies between 6 O’clock and 5 O’clock positions (see FIG. 6C).
  • the outer heater 162-2 comprises a first turn 308.
  • the first turn 308 turns the outer heater 162-2 counter-clockwise.
  • the first turn 308 turns the outer heater 162-2 away from the diameter D1 and turns the outer heater 162-2 towards the OD of the baseplate 118 of the pedestal 114.
  • the first turn 308 lies in the outer zone 200-2.
  • the first portion 304, the second portion 306, and the first turn 308 lie in the quadrant Q4.
  • the first portion 304, the second portion 306, and the first turn 308 lie within a half portion of the quadrant Q4 that is adjacent to the diameter D1 (see FIG. 6B).
  • the first portion 304, the second portion 306, and the first turn 308 lie between 6 O’clock and 5 O’clock positions (see FIG. 6C).
  • a first arcuate portion 310 extends the outer heater 162-2 from the quadrant Q4 into the quadrant Q1.
  • the first arcuate portion 310 extends counter-clockwise along (parallel to) the OD of the baseplate 118.
  • the first arcuate portion 310 lies in quadrants Q4 and Q1.
  • the first arcuate portion 310 lies in the outer zone 200-2.
  • the first arcuate portion 310 extends up to the diameter D1 in the quadrant Q1 but does not intersect the diameter D1.
  • the first arcuate portion 310 is semi-circular.
  • a second arcuate portion 314 extends the outer heater 162-2 clockwise from the quadrant Q1 , through quadrants Q4 and Q3 intersecting the diameter D1 , into the quadrant Q2.
  • the second arcuate portion 314 lies in the outer zone 200-2.
  • the second arcuate portion 314 lies in all four quadrants Q1 though Q4.
  • the second arcuate portion 314 extends along (parallel to) the OD of the baseplate 118.
  • the second arcuate portion 314 surrounds the first arcuate portion 310.
  • the second arcuate portion 314 lies between the first arcuate portion 310 and the OD of the baseplate 118.
  • the end of the second arcuate portion 314 extends up to the diameter D1 in the quadrant Q2 but does not intersect the diameter D1 .
  • the second arcuate portion 314 is mostly circular.
  • the outer heater 162-2 comprises a fourth turn 320 in the quadrant Q3.
  • the fourth turn 320 turns the outer heater 162-2 towards the diameter D1 and towards the center portion of the baseplate 118 of the pedestal 114.
  • the fourth turn 320 turns the outer heater 162-2 turns the outer heater 162-2 away from the OD of the baseplate 118 of the pedestal 114.
  • the fourth turn 320 lies in the quadrant Q3.
  • the fourth turn 320 lies within a half portion of the quadrant Q3 that is adjacent to the diameter D1 (see FIG. 6B).
  • the fourth turn 320 lies between 6 O’clock and 7 O’clock positions (see FIG. 6C).
  • a fourth portion 324 of the outer heater 162- 2 extends linearly to the first terminal 300.
  • the fourth portion 324 extends towards the center portion of the baseplate 118 and towards the diameter D2.
  • the fourth portion 324 extends parallel to the diameter D1.
  • the fourth portion 324 is linear.
  • the fourth portion 324 lies in the inner zone 200-1 .
  • the fourth portion 324 lies in the quarter Q3.
  • the fourth turn 320, the third portion 322, and the fourth portion 324 of the outer heater 162-2 lie in the quadrant Q3.
  • the fourth turn 320, the third portion 322, and the fourth portion 324 of the outer heater 162-2 lie within a half portion of the quadrant Q3 that is adjacent to the diameter D1 (see FIG. 6B).
  • the fourth turn 320, the third portion 322, and the fourth portion 324 of the outer heater 162-2 lie between 6 O’clock and 7 O’clock positions (see FIG. 6C).
  • elements 304, 306, 308, and portions of elements 310 and 314 lie in the quadrant Q4.
  • Element 312 and portions of elements 310 and 314 lie in the quadrant Q1 .
  • Element 316 and portions of elements 314 and 318 lie in the quadrant Q2.
  • Elements 320, 322, 326, and portions of elements 310 and 314 lie in the quadrant Q3.
  • Elements 308, 312, 314, 316, 318 lie in the outer zone 200-2.
  • Elements 304, 306, 322, 324 lie in the inner zone 200-1 .
  • Elements 306 and 322 lie partially in the outer zone 200-2 and partially in the inner zone 200-1.
  • the multiple portions of the outer heater 162-2 turn the outer heater 162-2 clockwise and counterclockwise multiple times to cover most of the area on the outer zone 200-2.
  • portions of elements 254, 258, 264, 304, 324, 278, 272, 282 of the inner and outer heaters 162-1 , 162-2 lie within the circle of radius r3 shown in FIG. 5. These portions minimize or eliminates cold spots otherwise caused in the baseplate 118 and in the substrate 124 by the heat drawn from the baseplate 118 by the stem 120. Additionally, elements 310, 314, 318, 308, 320, 312, 316 of the outer heater 162-2 compensate for the heat lost from the outer edges of the baseplate 118 to the station walls through radiation.
  • the heat losses increase as the emissivity of the pedestal 114 increases over time.
  • the controller 180 controls the inner and outer heaters 162-1 , 162-2 independently of each other.
  • the controller 180 can control the outer heater 162-2 and increase power supplied to the outer heater 162-1 to compensate for the increased heat losses while maintaining the temperature profile of the substrate 124 by changing the power supplied to the inner heater 162-1 independently of the power supplied to the outer heater 162-2. Accordingly, the temperature profile of the substrate 124, which is determined mostly by the inner heater 162-1 , can be maintained.
  • Elements of the inner and outer heaters 162-1 , 162-2 have the above geometries and are spaced apart from each other to uniformly heat baseplate 118 and the substrate 124 without causing cold spots or hot spots.
  • elements 256 and 280 are spaced apart from each other, from element 268, and from elements 264 and 272.
  • Elements 266 and 270 are spaced apart from elements 262, 260, 274, 276.
  • Elements 260 and 276 are spaced apart from elements 304 and 324, and from elements 306 and 322.
  • Element 258 and 278 are curved and spaced apart from elements 262 and 274, and from elements 304 and 324.
  • Elements 306 and 322 are angled to not bias the outer temperature sensors 164-2, 164-3.
  • Elements 306 and 322 are angled to not form a cold spot in regions between elements 260 and 306 and between elements 276 and 322.
  • Elements 268, 266, 260, 276, and 270 are spaced apart from elements 310 and 318.
  • Elements 312 and 316 are positioned apart from each other (e.g., at an equal predetermined distance from the diameter D1 ) so that hot spots are not formed in the region between elements 312 and 316.
  • Elements 308 and 320 are positioned apart from each other (e.g., at an equal predetermined distance from the diameter D1 ) so that hot spots are not formed in the region between elements 308 and 320.
  • the separation between elements 308 and 320 is achieved by angling elements 306 and 322.
  • the diameter D1 of the baseplate 118 separates the quadrants Q1 and Q4 from the quadrants Q2 and Q3.
  • the diameter D1 of the baseplate 118 intersects only elements 268 and 314 of the inner and outer heaters 162-1 , 162-2.
  • the diameter D1 of the baseplate 118 does not intersect any other elements or portions of the inner and outer heaters 162-1 , 162-2. All other elements or portions of the inner and outer heaters 162-1 , 162-2 lie on either side of the diameter D1 as described above, which makes the inner and outer heaters 162-1 , 162-2 symmetric around the diameter D1 .
  • the inner and outer heaters 162-1 , 162-2 are symmetric around the diameter D1 that separates the quadrants Q1 and Q4 from the quadrants Q2 and Q3. All other elements or portions of the inner and outer heaters 162-1 , 162-2 lie on either side of the diameter D1 as described above, which makes the elements or portions of the inner and outer heaters 162-1 , 162-2 in the quadrants Q1 and Q4 mirror images of the elements or portions of the inner and outer heaters 162-1 , 162-2 in the quadrants Q2 and Q3.
  • FIGS. 7A and 7B show two different implementations of the inner and outer heaters 162-1 , 162-2 in the baseplate 118 of the pedestal 114 of FIG. 2 according to the present disclosure.
  • the inner and outer heaters 162-1 , 162-2 comprise heating elements (e.g., coils) that are two-terminal devices across which power is applied.
  • the inner and outer heaters 162-1 , 162-2 can comprise heating elements with a D-shaped cross-section as shown in FIG. 7A.
  • the inner and outer heaters 162-1 , 162-2 can comprise heating elements with a circular cross-section as shown in FIG. 7B.
  • the baseplate 118 comprises a first plate 118-1 and a second plate 118-2.
  • the first plate 118-1 and the second plate 118-2 are made of the metallic material such as an alloy of aluminum.
  • the inner and outer heaters 162-1 , 162- 2 are sandwiched between the first plate 118-1 and the second plate 118-2.
  • a bottom surface of the first plate 118-1 is machined to form channels in which the D-shaped coils of the inner and outer heaters 162-1 , 162-2 can be arranged.
  • a top surface of second plate 118-2 is flat and is bonded to the bottom surface of the first plate 118-1.
  • the bottom surface of the first plate 118-1 and the top surface of the second plate 118-2 are machined to form channels in which the round coils of the inner and outer heaters 162-1 , 162-2 can be arranged.
  • the top surface of second plate 118-2 is flat and is bonded to the bottom surface of the first plate 118-1.
  • FIG. 8A shows a system for independently controlling the power supplied to the inner and outer heaters 162-1 , 162-2 according to the present disclosure.
  • the system comprises the controller 180 shown in FIG. 1.
  • the controller 180 comprises a power supply 181 to supply power to the inner and outer heaters 162-1 , 162-2 independently of each other as described above.
  • the power supply 181 may generate and supply the first power to the inner heater 162-1 and may generate and supply the second power to the outer heater 162-2.
  • the power supply 181 may comprise a first power supply PS1 to generate and supply the first power to the inner heater 162-1.
  • the power supply 181 may comprise a second power supply PS2 to generate and supply the second power to the outer heater 162-2.
  • the first power supply PS1 may be connected to the terminals 250, 252 of the inner heater 162-1.
  • the second first power supply PS2 may be connected to the terminals 300, 302 of the outer heater 162-2. While the power supply 181 and the power supplies PS1 , PS2 are shown internal to the controller 180, the power supply 181 and the power supplies PS1 , PS2 may be external to the controller 180.
  • the power supply 181 may control the first power supplied to the inner heater 162-1 based on the feedback received from the inner temperature sensor 164-1.
  • the power supply 181 (or the second power supply PS2) may control the second power supplied to the outer heater 162-2 based on the feedback received from one of the outer temperature sensors 164-2, 164-3. If the temperature sensor 164-2 fails, the controller 180 uses the temperature sensor 164-3 to control the second power supplied to the outer heater 162-2.
  • the controller 180 controls the first power and the second power supplied to the inner and outer heaters 162-1 , 162-2 independently of each other as described above.
  • FIG. 8B shows a method 350 for independently controlling the power supplied to the inner and outer heaters 162-1 , 162-2 according to the present disclosure.
  • the controller 180 may perform the method 350.
  • the controller 180 receives a temperature setpoint for heating the substrate 124.
  • the controller 180 supplies the first power to the inner heater 162-1 (e.g., from the power supply 181 or the power supply PS1 ) based on the temperature setpoint.
  • the controller 180 controls the first power supplied to the inner heater 162-1 (i.e., the controller 180 controls the power supply 181 or the power supply PS1 ) based on feedback received from the inner temperature sensor 164-1 .
  • the controller 180 supplies the second power to the outer heater 162-2 (e.g., from the power supply 181 or the power supply PS2) to compensate for heat losses from the edges of the edges of the pedestal 114 to the station walls through radiation.
  • the controller 180 controls the second power supplied to the outer heater 162-2 (i.e., controls the power supply 181 or the power supply PS2) based on feedback received from the outer temperature sensor 164-2.
  • the method 350 determines if the outer temperature sensor 164-2 has failed. If the outer temperature sensor 164-2 has not failed, the method 350 returns to 352. If the outer temperature sensor 164-2 has failed, at 364, the controller 180 selects the outer temperature sensor 164-3 and controls the second power supplied to the outer heater 162-2 (i.e., controls the power supply 181 or the power supply PS2) based on feedback received from the outer temperature sensor 164-3. The method 350 returns to 352. Thus, the controller 180 180 controls the first power and the second power supplied to the inner and outer heaters 162-1 , 162-2 independently of each other. [0134]
  • the foregoing description is merely illustrative in nature and is not intended to limit the disclosure, its application, or uses. The broad teachings of the disclosure can be implemented in a variety of forms. Therefore, while this disclosure includes particular examples, the true scope of the disclosure should not be so limited since other modifications will become apparent upon a study of the drawings, the specification, and the following claims.
  • a controller is part of a system, which may be part of the above-described examples.
  • Such systems can comprise semiconductor processing equipment, including a processing tool or tools, chamber or chambers, a platform or platforms for processing, and/or specific processing components (a wafer pedestal, a gas flow system, etc.).
  • These systems may be integrated with electronics for controlling their operation before, during, and after processing of a semiconductor wafer or substrate.
  • the electronics may be referred to as the “controller,” which may control various components or subparts of the system or systems.
  • the controller may be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and/or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, positional and operation settings, wafer transfers into and out of a tool and other transfer tools and/or load locks connected to or interfaced with a specific system.
  • temperature settings e.g., heating and/or cooling
  • RF radio frequency
  • the controller may be defined as electronics having various integrated circuits, logic, non-transitory memory, and/or software that receive instructions, issue instructions, control operation, enable cleaning operations, enable endpoint measurements, and the like.
  • the integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and/or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software).
  • Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files), defining operational parameters for carrying out a particular process on or for a semiconductor wafer or to a system.
  • the operational parameters may, in some examples, be part of a recipe defined by process engineers to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and/or dies of a wafer.
  • the controller in some implementations, may be a part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof.
  • the controller may be in the “cloud” or all or a part of a fab host computer system, which can allow for remote access of the wafer processing.
  • the computer may enable remote access to the system to monitor current progress of fabrication operations, examine a history of past fabrication operations, examine trends or performance metrics from a plurality of fabrication operations, to change parameters of current processing, to set processing steps to follow a current processing, or to start a new process.

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Abstract

Un support de substrat pour traiter un substrat comprend une plaque de base, un premier dispositif de chauffage et un second dispositif de chauffage. Le premier dispositif de chauffage est disposé dans une première partie de la plaque de base. Le second dispositif de chauffage est disposé dans une seconde partie de la plaque de base et partiellement disposé dans la première partie de la plaque de base.
PCT/US2025/013197 2024-02-16 2025-01-27 Dispositifs de chauffage à double zone pour socles métalliques Pending WO2025174574A1 (fr)

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US63/554,751 2024-02-16

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140008349A1 (en) * 2012-07-03 2014-01-09 Applied Materials, Inc. Substrate support for substrate backside contamination control
WO2014144502A1 (fr) * 2012-06-12 2014-09-18 Component Re-Engineering Company , Inc. Dispositif de chauffage multizones
US20170236733A1 (en) * 2016-02-17 2017-08-17 Lam Research Corporation Common Terminal Heater for Ceramic Pedestals Used in Semiconductor Fabrication
US20190385827A1 (en) * 2017-02-28 2019-12-19 Nhk Spring Co., Ltd. Substrate supporting unit and film forming device having the substrate supporting unit
US20210050234A1 (en) * 2019-08-16 2021-02-18 Applied Materials, Inc. Heated substrate support with thermal baffles

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014144502A1 (fr) * 2012-06-12 2014-09-18 Component Re-Engineering Company , Inc. Dispositif de chauffage multizones
US20140008349A1 (en) * 2012-07-03 2014-01-09 Applied Materials, Inc. Substrate support for substrate backside contamination control
US20170236733A1 (en) * 2016-02-17 2017-08-17 Lam Research Corporation Common Terminal Heater for Ceramic Pedestals Used in Semiconductor Fabrication
US20190385827A1 (en) * 2017-02-28 2019-12-19 Nhk Spring Co., Ltd. Substrate supporting unit and film forming device having the substrate supporting unit
US20210050234A1 (en) * 2019-08-16 2021-02-18 Applied Materials, Inc. Heated substrate support with thermal baffles

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