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WO2025173340A1 - Élément d'entraînement - Google Patents

Élément d'entraînement

Info

Publication number
WO2025173340A1
WO2025173340A1 PCT/JP2024/041444 JP2024041444W WO2025173340A1 WO 2025173340 A1 WO2025173340 A1 WO 2025173340A1 JP 2024041444 W JP2024041444 W JP 2024041444W WO 2025173340 A1 WO2025173340 A1 WO 2025173340A1
Authority
WO
WIPO (PCT)
Prior art keywords
protective film
driving element
substrate
drive
electrode layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/JP2024/041444
Other languages
English (en)
Japanese (ja)
Inventor
賢太郎 中西
貴巳 石田
健介 水原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Intellectual Property Management Co Ltd
Original Assignee
Panasonic Intellectual Property Management Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Intellectual Property Management Co Ltd filed Critical Panasonic Intellectual Property Management Co Ltd
Publication of WO2025173340A1 publication Critical patent/WO2025173340A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/10—Scanning systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals

Definitions

  • the present invention relates to a drive element that drives a moving part.
  • a piezoelectric element can be used as the drive source.
  • Patent Document 1 describes a meander-type drive element that uses a piezoelectric element as the drive source.
  • the drive unit is made up of a piezoelectric element sandwiched between a lower electrode and an upper electrode.
  • the drive unit is covered with an insulating protective film.
  • the present invention aims to provide a driving element that can operate reliably even in high-temperature, high-humidity environments.
  • a main aspect of the present invention relates to a drive element for driving a movable part.
  • the drive element according to this aspect includes a substrate, a laminated structure formed on the substrate and including a piezoelectric layer, an upper electrode layer and a lower electrode layer disposed above and below the piezoelectric layer , a first protective film made of Al2O3 and covering the entire surface of the laminated structure, and a hot-water-resistant second protective film covering the entire surface of the first protective film.
  • the entire surface of the first protective film is covered with the hot-water-resistant second protective film, preventing the first protective film from being exposed to high-temperature hot water. Furthermore, even if humid gases such as water vapor pass through the second protective film, these gases are blocked by the highly moisture-resistant first protective film. Therefore, the driving element can operate reliably even in high-temperature, high-humidity environments.
  • the present invention provides a driving element that can operate reliably even in high-temperature, high-humidity environments.
  • FIG. 1 is a perspective view schematically illustrating the configuration of a driving element according to an embodiment.
  • Fig. 2(a) is a diagram schematically illustrating a cross-sectional structure of the driving element according to the embodiment when cut at the A-A' position in Fig. 1.
  • Fig. 2(b) is a diagram schematically illustrating a cross-sectional structure of the driving element according to the embodiment when cut at the B-B' position in Fig. 1.
  • FIG. 3 is a plan view schematically showing an electrical connection between a driving portion and a terminal portion according to the embodiment.
  • 4A and 4B are diagrams schematically showing a cross-sectional structure according to a comparative example.
  • 5A and 5B are diagrams schematically illustrating a film formation process of a first protective film on a vibrating portion according to an embodiment.
  • 6A and 6B are diagrams schematically illustrating a film formation process of the first protective film on the fixed portion according to the embodiment.
  • 7A and 7B are diagrams schematically showing the film-forming process of the first protective film and the second protective film on the vibrating section according to the first modified example.
  • 8A and 8B are diagrams schematically showing the film formation process of the first protective film and the second protective film on the fixed portion according to the first modification.
  • 9A and 9B are diagrams schematically showing the film-forming process of the first protective film and the second protective film on the vibrating section according to the second modification.
  • 10A and 10B are diagrams schematically showing the film formation process of the first protective film and the second protective film on the fixed portion according to the second modification.
  • FIG. 11 is a perspective view schematically showing the configuration of a driving element according to the third modification.
  • each drawing is labeled with mutually orthogonal X, Y, and Z axes.
  • the positive direction of the Z axis is the vertically upward direction, which corresponds to the thickness direction (height direction) of the drive element 1.
  • Figure 1 is a perspective view showing the configuration of the driving element 1.
  • the fixed part 10, the vibrating part 20, the connecting part 30, and the movable part 40 are connected by a common substrate 101 (see Figures 2(a) and (b)).
  • Drive units 51 and 52 are alternately arranged in the region of the vibration unit 20 on the substrate 101. As will be explained later with reference to Figure 2(a), the drive units 51 and 52 are formed by arranging an upper electrode layer 105 and a lower electrode layer 103 above and below the piezoelectric layer 104.
  • the upper electrode layers 105 of the two drive units 51 arranged in one vibrating unit 20 are connected to each other by wiring units 61 arranged on the upper surface of the substrate 101, and are further connected to the terminal units 71 of the fixed unit 10 by the wiring units 61.
  • Figure 2(a) is a diagram schematically showing the cross-sectional structure of the driving element 1 when cut at the A-A' position in Figure 1.
  • Figure 2(b) is a diagram schematically showing the cross-sectional structure of the driving element 1 when cut at the B-B' position in Figure 1.
  • the fixed portion 10 has terminal portions 71-73 arranged on a substrate 101. Similar to the laminated structure 110, the terminal portions 71 and 72 have a surface oxide film 102, a lower electrode layer 103, a piezoelectric layer 104, and an upper electrode layer 105 laminated thereon. In the area surrounding the terminal portions 71 and 72, the upper electrode layer 105 has been removed by etching, leaving only the surface oxide film 102, the lower electrode layer 103, and the piezoelectric layer 104. In the terminal portion 73, the piezoelectric layer 104 and the upper electrode layer 105 have been removed by etching, exposing the lower electrode layer 103.
  • the laminated structure 110 remains on the positive Y-axis side of the terminal portion 73.
  • Figure 3 is a plan view that schematically shows the electrical connection between the drive units 51 and 52 and the terminal units 71 to 73.
  • each plate-shaped portion of the vibrating portion 20 on the negative side of the X-axis is the cross-sectional structure of Figure 2(a) flipped in the X-axis direction. This can be easily understood from the symmetry of the pair of fixed portions 10 and the pair of vibrating portions 20.
  • Figures 4(a) and 4(b) are diagrams schematically showing the cross-sectional structure of a comparative example.
  • the entire surface of the first protective film 106, including the end faces of the first protective film 106, is covered with the second protective film 107. Therefore, even if the driving element 1 is used in a high-temperature and high-humidity environment, the first protective film 106 is not exposed to hot water such as high-temperature water droplets. Therefore, the film quality of the first protective film 106 (Al 2 O 3 ) is not deteriorated by hot water, and the driving element 1 can operate with high reliability even in a high-temperature and high-humidity environment.
  • the width from this end surface to the end surface of the substrate 101 can be set small, and as a result, the widths W1 and W2 in Figure 2(a) can be reduced.
  • This allows the placement area (installation area) of the drive unit 51 to be expanded, and the drive force of the drive unit 51 to be increased.
  • the widths W3 and W4 in Figure 2(b) can be reduced on the fixed portion 10 side, allowing for a larger installation area around the terminal portions 71 to 73. This allows for the width of the terminal portions 71 to 73 to be smoothly secured.
  • the surface oxide film 102, the lower electrode layer 103, the piezoelectric layer 104, and the upper electrode layer 105 shown in FIGS. 5( a) and 6(a) are formed on the substrate 101. These films are formed by processes similar to well-known semiconductor film formation processes. Thereafter, as shown in FIGS. 5( a) and 6(a), the first protective film 106 (Al 2 O 3 ) is formed. Here, the first protective film 106 is formed by atomic layer deposition (ALD). The thickness of the first protective film 106 is constant. The thickness of the first protective film 106 can be set to approximately 20 to 300 nm.
  • the distances R1 and R3 from the side of the laminated structure 110 to the end face of the first protective film 106 can be set to 1 ⁇ m or more. This can improve adhesion between the first protective film 106 and the top surface of the substrate 101.
  • the distances R2 and R4 from the end face of the first protective film 106 to the end face of the substrate 101 can be set to 1 ⁇ m or more.
  • the installation area of the laminated structure 110 piezoelectric layer 104
  • the driving efficiency decreases. For this reason, it is preferable that these distances be as small as possible and no less than 1 ⁇ m.
  • the second protective film 107 is formed so that the edge surface of the second protective film 107 is flush with the edge surface of the substrate 101. Therefore, the edge surface of the second protective film 107 is spaced from the edge surface of the first protective film 106 by 1 ⁇ m or more, which is the distances R2 and R4 in Figures 5(b) and 6(b). This ensures that the width of the skirt 107a of the second protective film 107 that wraps around the top surface of the substrate 101 is sufficient, and improves adhesion between the second protective film 107 and the substrate 101 at this skirt 107a.
  • the driving element 1 includes a substrate 101, a laminated structure 110 formed on the substrate 101 and including a piezoelectric layer 104, an upper electrode layer 105 and a lower electrode layer 103 arranged above and below the piezoelectric layer 104, a first protective film 106 made of Al 2 O 3 and covering the entire surface of the laminated structure 110, and a hot-water-resistant second protective film 107 covering the entire surface of the first protective film 106.
  • the driving element 1 can be operated reliably even in high-temperature, high-humidity environments.
  • the entire surface of the laminated structure 110 of the drive units 51, 52 and wiring units 61, 62 is covered with the first protective film 106 and the second protective film 107. This prevents electrical malfunctions in the drive units 51, 52 and wiring units 61, 62 when the drive element 1 is used in a high-temperature, high-humidity environment. This allows the drive element 1 to operate with high reliability.
  • the edge surface of the second protective film 107 and the edge surface of the substrate 101 are flush with each other.
  • the placement area of the piezoelectric layer 104 as a drive source can be expanded in the direction approaching the edge face of the substrate 101.
  • the width W2 of the portion of the second protective film 107 (bottom portion 107a) that wraps around the top surface of the substrate 101 is a predetermined dimension, aligning the edge face of the second protective film 107 flush with the edge face of the substrate 101 allows the position of the side of the laminated structure 110 to shift toward the edge face of the substrate 101 compared to when the edge face of the second protective film 107 is recessed inward from the edge face of the substrate 101. Therefore, the placement area (installation area) of the piezoelectric layer 104 as a drive source can be expanded, and a greater driving force can be applied to the movable part 40.
  • This configuration improves adhesion between the bottom portion 106a and the substrate 101, thereby reliably preventing humid gas from penetrating into the interior from the boundary between the first protective film 106 and the top surface of the substrate 101. Furthermore, by providing the bottom portion 106a in this manner, it is possible to reliably maintain adhesion between the first protective film 106 and the substrate 101 even if processing variations occur in the first protective film 106 during the etching process.
  • the end face of the first protective film 106 (end face of the skirt portion 106a) be 1 ⁇ m or more (distances R1, R3) away from the side face of the piezoelectric layer 104.
  • this bottom portion 106a can reliably prevent humid gas from penetrating the piezoelectric layer 104.
  • the thickness of the second protective film 107 be as small as possible from the perspective of the drive efficiency of the piezoelectric layer 104.
  • the thickness of the second protective film 107 be somewhat large. For these reasons, it is sufficient that the thickness of the second protective film 107 be substantially constant and near the minimum film thickness that maintains coverage. This makes it possible to maintain high drive efficiency of the piezoelectric layer 104 while ensuring coverage by the second protective film 107.
  • a second protective film 107 with excellent warm water resistance can be formed on the surface of the first protective film 106.
  • the second protective film 107 is formed, and then an etching process is performed on the second protective film 107.
  • the second protective film 107 is formed as shown in Figures 7(b) and 8(b). Isotropic etching is also used for the etching process here.
  • the shape of the second protective film 107 near the end face of the first protective film 106 is tapered, reflecting the shape of the end face of the first protective film 106.
  • the thicknesses of the first protective film 106 and the second protective film 107 may be the same as in the above embodiment.
  • 9(a) and 9(b) are diagrams schematically showing the film formation process of the first protective film 106 and the second protective film 107 in the vibrating section 20 according to Modification Example 2.
  • Figures 10(a) and 10(b) are diagrams schematically showing the film formation process of the first protective film 106 and the second protective film 107 in the fixed section 10 according to Modification Example 2.
  • an etching process is performed on the first protective film 106 so that a skirt portion 106a does not form.
  • This etching process may be performed by anisotropic etching.
  • a process for forming a second protective film 107 is performed.
  • the second protective film 107 is formed as shown in Figures 9(b) and 10(b).
  • ⁇ Modification 3> In the above embodiment, an example in which the present invention is applied to a meander-type driving element 1 is shown, but the present invention may also be applied to driving elements of other types. For example, the present invention may be applied to a tuning fork-type driving element 2 shown in FIG.
  • the driving element 2 comprises a pair of fixed portions 201, a pair of arm portions 202, a pair of support portions 203, and a movable portion 204. As described above, these are formed from a common substrate.
  • a driving portion 205 is disposed on the arm portion 202, and each driving portion 205 is connected to terminal portions 206, 207, and 208 by wiring portions (not shown) formed on the upper surface of the substrate.
  • a reflective film 204a is formed on the upper surface of the movable portion 204.
  • a driving element characterized by:
  • This technology allows the placement area of the piezoelectric layer as a drive source to be expanded in the direction approaching the edge of the substrate.
  • the width of the portion (bottom) of the second protective film that wraps around the top surface of the substrate is a predetermined dimension, aligning the edge of the second protective film flush with the edge of the substrate allows the position of the side of the laminated structure to be shifted toward the edge of the substrate compared to when the edge of the second protective film is recessed inward from the edge of the substrate.
  • This allows the placement area of the piezoelectric layer as a drive source to be expanded, and a greater driving force can be applied to the movable part.
  • This technology improves adhesion between the skirt and the substrate, reliably preventing humid gas from penetrating into the interior through the boundary between the first protective film and the top surface of the substrate.
  • the thickness of the first protective film formed on the top surface and the side surface of the laminated structure is substantially constant;

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)

Abstract

Cet élément d'entraînement comprend : un substrat (101) ; une structure en couches (110) qui est formée sur le substrat (101) et qui comprend une couche piézoélectrique (104), ainsi qu'une couche d'électrode supérieure (105) et une couche d'électrode inférieure (103) qui sont positionnées au-dessus et en-dessous de la couche piézoélectrique (104) ; un premier film protecteur (106) qui est composé d'Al2O3 et qui recouvre toute la surface de la structure en couches (110) ; et un second film protecteur (107) qui est résistant à l'eau chaude et qui recouvre toute la surface du premier film protecteur (106).
PCT/JP2024/041444 2024-02-14 2024-11-22 Élément d'entraînement Pending WO2025173340A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2024020317 2024-02-14
JP2024-020317 2024-02-14

Publications (1)

Publication Number Publication Date
WO2025173340A1 true WO2025173340A1 (fr) 2025-08-21

Family

ID=96772701

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2024/041444 Pending WO2025173340A1 (fr) 2024-02-14 2024-11-22 Élément d'entraînement

Country Status (1)

Country Link
WO (1) WO2025173340A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012516120A (ja) * 2009-01-26 2012-07-12 サイマティクス ラボラトリーズ コーポレーション 保護された共振器
WO2013042658A1 (fr) * 2011-09-22 2013-03-28 日本碍子株式会社 Actionneur piézoélectrique/électrostrictif
WO2018074084A1 (fr) * 2016-10-19 2018-04-26 ソニーセミコンダクタソリューションズ株式会社 Dispositif à semi-conducteurs, appareil d'affichage et équipement électronique
WO2023149191A1 (fr) * 2022-02-03 2023-08-10 パナソニックＩｐマネジメント株式会社 Élément d'entraînement et dispositif d'entraînement

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012516120A (ja) * 2009-01-26 2012-07-12 サイマティクス ラボラトリーズ コーポレーション 保護された共振器
WO2013042658A1 (fr) * 2011-09-22 2013-03-28 日本碍子株式会社 Actionneur piézoélectrique/électrostrictif
WO2018074084A1 (fr) * 2016-10-19 2018-04-26 ソニーセミコンダクタソリューションズ株式会社 Dispositif à semi-conducteurs, appareil d'affichage et équipement électronique
WO2023149191A1 (fr) * 2022-02-03 2023-08-10 パナソニックＩｐマネジメント株式会社 Élément d'entraînement et dispositif d'entraînement

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