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WO2025171992A1 - Agencement d'éclairage et de détection et procédé pour agencement de métrologie - Google Patents

Agencement d'éclairage et de détection et procédé pour agencement de métrologie

Info

Publication number
WO2025171992A1
WO2025171992A1 PCT/EP2025/051256 EP2025051256W WO2025171992A1 WO 2025171992 A1 WO2025171992 A1 WO 2025171992A1 EP 2025051256 W EP2025051256 W EP 2025051256W WO 2025171992 A1 WO2025171992 A1 WO 2025171992A1
Authority
WO
WIPO (PCT)
Prior art keywords
illumination
area
objective
detection
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/EP2025/051256
Other languages
English (en)
Inventor
Patrick Warnaar
Henricus Petrus Maria Pellemans
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from EP24157102.5A external-priority patent/EP4600746A1/fr
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of WO2025171992A1 publication Critical patent/WO2025171992A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection

Definitions

  • the present invention relates to an illumination and detection arrangement and its use in a metrology arrangement, and a method for illuminating and detecting radiation in a metrology arrangement.
  • a lithographic apparatus is a machine constructed to apply a desired pattern onto a substrate.
  • a lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs).
  • a lithographic apparatus may, for example, project a pattern (also often referred to as “design layout” or “design”) at a patterning device (e.g., a mask) onto a layer of radiation- sensitive material (resist) provided on a substrate (e.g., a wafer).
  • a lithographic apparatus may use electromagnetic radiation.
  • the wavelength of this radiation determines the minimum size of features which can be formed on the substrate. Typical wavelengths currently in use are 365 nm (i-line), 248 nm, 193 nm and 13.5 nm.
  • a lithographic apparatus which uses extreme ultraviolet (EUV) radiation, having a wavelength within the range 4-20 nm, for example 6.7 nm or 13.5 nm, may be used to form smaller features on a substrate than a lithographic apparatus which uses, for example, radiation with a wavelength of 193 nm.
  • EUV extreme ultraviolet
  • Low-ki lithography may be used to process features with dimensions smaller than the classical resolution limit of a lithographic apparatus.
  • CD kix /NA
  • NA the numerical aperture of the projection optics in the lithographic apparatus
  • CD is the “critical dimension” (generally the smallest feature size printed, but in this case half -pitch)
  • ki is an empirical resolution factor.
  • sophisticated fine-tuning steps may be applied to the lithographic projection apparatus and/or design layout.
  • RET resolution enhancement techniques
  • an illumination and detection arrangement for a metrology arrangement comprising: a plurality of individually configurable illumination sources located in an illumination plane, wherein each of the plurality of individually configurable illumination sources is operable to emit illumination radiation; an objective lens defining an objective NA area and configured to receive the illumination radiation, focus it onto a structure in an object plane, and subsequently collect radiation scattered from the structure upon illumination; and at least one image sensor located in a detection plane and configured to detect at least one portion of the scattered radiation collected by the objective lens and record an image associated with the structure; wherein the at least one portion of the scattered radiation either is detected at or passes through the illumination plane.
  • a metrology device comprising an illumination and detection arrangement of the first aspect, operable to use the plurality of individually configurable illumination sources to provide measurement illumination for a measurement of a structure and use the at least one image sensor to record an image of the structure.
  • the metrology device may comprise a scatterometer, interferometer or holographic microscope.
  • the metrology device may comprise an alignment sensor or level sensor.
  • a third aspect of the invention there is provided a method for illuminating and detecting radiation in a metrology arrangement.
  • aspects of the invention comprise a lithographic device comprising an illumination and detection arrangement of the first aspect.
  • Figure 1 depicts a schematic overview of a lithographic apparatus
  • Figure 4 is a schematic illustration of a scatterometry apparatus
  • Figure 5(a) is a schematic diagram of a dark field scatterometer for use in measuring targets according to embodiments of the invention using a first pair of illumination apertures;
  • Figure 5(b) shows a detail of diffraction spectrum of a target grating for a given direction of illumination
  • Figure 5(c) shows a second pair of illumination apertures providing further illumination modes in using the scatterometer for diffraction based overlay measurements
  • Figure 5(d) shows a third pair of illumination apertures combining the first and second pair of apertures
  • Figure 5(e) shows further illumination aperture examples which may be used for other metrology applications
  • Figure 6(a) is a schematic diagram of an illumination and detection arrangement for a metrology arrangement in accordance with an embodiment
  • Figure 6(b) shows an objective NA area of the objective lens of the illumination and detection arrangement
  • Figure 6(c) shows an example arrangement of a plurality of individually configurable illumination sources and at least one image sensor, both located in an illumination plane;
  • Figure 7(a) is a schematic diagram of an illumination and detection arrangement for a metrology arrangement in accordance with a different embodiment
  • Figure 7(b) shows an objective NA area of the objective lens of the illumination and detection arrangement
  • Figure 7(c) shows an example arrangement of a plurality of individually configurable illumination sources and at least one pair of optical wedges, both located in an illumination plane.
  • the terms “radiation” and “beam” are used to encompass all types of electromagnetic radiation, including ultraviolet radiation (e.g. with a wavelength of 365, 248, 193, 157 or 126 nm) and EUV (extreme ultra-violet radiation, e.g. having a wavelength in the range of about 5- 100 nm).
  • ultraviolet radiation e.g. with a wavelength of 365, 248, 193, 157 or 126 nm
  • EUV extreme ultra-violet radiation
  • reticle may be broadly interpreted as referring to a generic patterning device that can be used to endow an incoming radiation beam with a patterned cross-section, corresponding to a pattern that is to be created in a target portion of the substrate.
  • the term “light valve” can also be used in this context.
  • examples of other such patterning devices include a programmable mirror array and a programmable LCD array.
  • FIG. 1 schematically depicts a lithographic apparatus LA.
  • the lithographic apparatus LA includes an illumination system (also referred to as illuminator) IL configured to condition a radiation beam B (e.g., UV radiation, DUV radiation or EUV radiation), a mask support (e.g., a mask table) MT constructed to support a patterning device (e.g., a mask) MA and connected to a first positioner PM configured to accurately position the patterning device MA in accordance with certain parameters, a substrate support (e.g., a wafer table) WT constructed to hold a substrate (e.g., a resist coated wafer) W and connected to a second positioner PW configured to accurately position the substrate support in accordance with certain parameters, and a projection system (e.g., a refractive projection lens system) PS configured to project a pattern imparted to the radiation beam B by patterning device MA onto a target portion C (e.g., comprising one or more dies) of the substrate W.
  • the illumination system IL receives a radiation beam from a radiation source SO, e.g. via a beam delivery system BD.
  • the illumination system IL may include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic, and/or other types of optical components, or any combination thereof, for directing, shaping, and/or controlling radiation.
  • the illuminator IL may be used to condition the radiation beam B to have a desired spatial and angular intensity distribution in its cross section at a plane of the patterning device MA.
  • projection system PS used herein should be broadly interpreted as encompassing various types of projection system, including refractive, reflective, catadioptric, anamorphic, magnetic, electromagnetic and/or electrostatic optical systems, or any combination thereof, as appropriate for the exposure radiation being used, and/or for other factors such as the use of an immersion liquid or the use of a vacuum. Any use of the term “projection lens” herein may be considered as synonymous with the more general term “projection system” PS.
  • the cleaning device may be arranged to clean part of the lithographic apparatus, for example a part of the projection system PS or a part of a system that provides the immersion liquid.
  • the measurement stage may move beneath the projection system PS when the substrate support WT is away from the projection system PS.
  • the radiation beam B is incident on the patterning device, e.g. mask, MA which is held on the mask support MT, and is patterned by the pattern (design layout) present on patterning device MA. Having traversed the mask MA, the radiation beam B passes through the projection system PS, which focuses the beam onto a target portion C of the substrate W. With the aid of the second positioner PW and a position measurement system IF, the substrate support WT can be moved accurately, e.g., so as to position different target portions C in the path of the radiation beam B at a focused and aligned position.
  • the patterning device e.g. mask, MA which is held on the mask support MT, and is patterned by the pattern (design layout) present on patterning device MA.
  • the radiation beam B passes through the projection system PS, which focuses the beam onto a target portion C of the substrate W.
  • the substrate support WT can be moved accurately, e.g., so as to position different target portions C in the path of the radiation beam B at a focused
  • first positioner PM and possibly another position sensor may be used to accurately position the patterning device MA with respect to the path of the radiation beam B.
  • Patterning device MA and substrate W may be aligned using mask alignment marks Ml, M2 and substrate alignment marks Pl, P2.
  • substrate alignment marks Pl, P2 as illustrated occupy dedicated target portions, they may be located in spaces between target portions.
  • Substrate alignment marks Pl, P2 are known as scribe-lane alignment marks when these are located between the target portions C.
  • the lithographic apparatus LA may form part of a lithographic cell LC, also sometimes referred to as a lithocell or (litho)cluster, which often also includes apparatus to perform pre- and post-exposure processes on a substrate W.
  • a lithographic cell LC also sometimes referred to as a lithocell or (litho)cluster
  • these include spin coaters SC to deposit resist layers, developers DE to develop exposed resist, chill plates CH and bake plates BK, e.g. for conditioning the temperature of substrates W e.g. for conditioning solvents in the resist layers.
  • a substrate handler, or robot, RO picks up substrates W from input/output ports I/O I , I/O2, moves them between the different process apparatus and delivers the substrates W to the loading bay LB of the lithographic apparatus LA.
  • the devices in the lithocell which are often also collectively referred to as the track, are typically under the control of a track control unit TCU that in itself may be controlled by a supervisory control system SCS, which may also control the lithographic apparatus LA, e.g. via lithography control unit LACU.
  • a supervisory control system SCS which may also control the lithographic apparatus LA, e.g. via lithography control unit LACU.
  • inspection tools may be included in the lithocell LC. If errors are detected, adjustments, for example, may be made to exposures of subsequent substrates or to other processing steps that are to be performed on the substrates W, especially if the inspection is done before other substrates W of the same batch or lot are still to be exposed or processed.
  • An inspection apparatus which may also be referred to as a metrology apparatus, is used to determine properties of the substrates W, and in particular, how properties of different substrates W vary or how properties associated with different layers of the same substrate W vary from layer to layer.
  • the inspection apparatus may alternatively be constructed to identify defects on the substrate W and may, for example, be part of the lithocell LC, or may be integrated into the lithographic apparatus LA, or may even be a stand-alone device.
  • the inspection apparatus may measure the properties on a latent image (image in a resist layer after the exposure), or on a semi-latent image (image in a resist layer after a post-exposure bake step PEB), or on a developed resist image (in which the exposed or unexposed parts of the resist have been removed), or even on an etched image (after a pattern transfer step such as etching).
  • the patterning process in a lithographic apparatus LA is one of the most critical steps in the processing which requires high accuracy of dimensioning and placement of structures on the substrate W.
  • three systems may be combined in a so called “holistic” control environment as schematically depicted in Figure 3.
  • One of these systems is the lithographic apparatus LA which is (virtually) connected to a metrology tool MET (a second system) and to a computer system CL (a third system).
  • the key of such “holistic” environment is to optimize the cooperation between these three systems to enhance the overall process window and provide tight control loops to ensure that the patterning performed by the lithographic apparatus LA stays within a process window.
  • the process window defines a range of process parameters (e.g. dose, focus, overlay) within which a specific manufacturing process yields a defined result (e.g. a functional semiconductor device) - typically within which the process parameters in the lithographic process or patterning process are allowed to vary.
  • the metrology tool MET may provide input to the computer system CL to enable accurate simulations and predictions, and may provide feedback to the lithographic apparatus LA to identify possible drifts, e.g. in a calibration status of the lithographic apparatus LA (depicted in Figure 3 by the multiple arrows in the third scale SC3).
  • a calibration status of the lithographic apparatus LA depictted in Figure 3 by the multiple arrows in the third scale SC3.
  • Various tools for making such measurements are known, including scanning electron microscopes or various forms of metrology apparatuses, such as scatterometers.
  • Examples of known scatterometers often rely on provision of dedicated metrology targets, such as underfilled targets (a target, in the form of a simple grating or overlapping gratings in different layers, that is large enough that a measurement beam generates a spot that is smaller than the grating) or overfilled targets (whereby the illumination spot partially or completely contains the target).
  • underfilled targets a target, in the form of a simple grating or overlapping gratings in different layers, that is large enough that a measurement beam generates a spot that is smaller than the grating
  • overfilled targets whereby the illumination spot partially or completely contains the target.
  • the use of metrology tools for example an angular resolved scatterometer illuminating an underfilled target, such as a grating, allows the use of so-called reconstruction methods where the properties of the grating can be calculated by simulating interaction of scattered radiation with a mathematical model of the target structure and comparing the simulation results with those of a measurement. Parameters of the model are adjusted until the simulated interaction
  • a scatterometer may be configured as a normal-incidence scatterometer or an oblique-incidence scatterometer.
  • the scatterometer MT is an angular resolved scatterometer.
  • reconstruction methods may be applied to the measured signal to reconstruct or calculate properties of the grating.
  • Such reconstruction may, for example, result from simulating interaction of scattered radiation with a mathematical model of the target structure and comparing the simulation results with those of a measurement. Parameters of the mathematical model are adjusted until the simulated interaction produces a diffraction pattern similar to that observed from the real target.
  • the aperture plate 13 may comprise a number of aperture patterns formed around a disc, which rotates to bring a desired pattern into place.
  • aperture plate 13N or 13S can only be used to measure gratings oriented in one direction (X or Y depending on the set-up).
  • rotation of the target through 90° and 270° might be implemented.
  • Different aperture plates are shown in Figures 5(c) and (d). The use of these, and numerous other variations and applications of the apparatus are described in prior published applications, mentioned above.
  • the US patent US10180630B2 which is incorporated herein by reference, discloses an illumination system which is capable of mitigating one or more of the associated problems mentioned above.
  • the illumination system comprises a plurality of illumination sources, such as a microLED array and provides a tunable- wavelength illumination pupil with control over the pupil profile. Comparing with conventional illumination systems (e.g., as shown in Figure 5(a)), the illumination system disclosed in US10180630B2 is more compact and has lower cost and higher reliability. However, such an improved illumination system is still physically separated from the detection branches (e.g., as shown in Figures 3(a) and 5 of US10180630B2) of the metrology system, thereby limiting the minimum achievable size and cost of the metrology tool. Therefore, it is desirable to further improve existing scatterometry-based metrology tools, particularly the illumination and detection systems comprised therein.
  • an illumination and detection arrangement for a metrology arrangement, for a metrology device or lithographic device.
  • the illumination and detection arrangement may comprise a plurality of individually configurable illumination sources located in an illumination plane. Each of the plurality of individually configurable illumination sources may be operable to emit illumination radiation.
  • the illumination and detection arrangement may comprise an objective lens defining an objective NA area and configured to receive the illumination radiation, focus it onto a structure in an object plane, and subsequently collect radiation scattered from the structure upon illumination.
  • the size (e.g., diameter) of the objective NA area may depend on the design of the objective lens.
  • the illumination plane may be a plane substantially coplanar with a light emitting surface of plurality of individually configurable illumination sources.
  • the illumination radiation may originate from the illumination plane and follow an illumination optical path towards the structure, e.g., as indicated by the solid line in Figure 6 or 7.
  • the detection plane may be a plane substantially coplanar with an image sensitive (or light sensitive) surface of the at least one image sensor.
  • the scattered radiation may originate from the structure and follow a detection optical path towards the detection plane, e.g., as indicated by the dashed and dotted line in Figure 6 or 7.
  • the illumination plane and detection plane may be mutually parallel planes (i.e., including the possibility of the illumination plane being substantially coplanar with the detection plane).
  • the illumination plane may be coplanar with the pupil plane of the objective lens or a conjugate plane thereof. Furthermore, the illumination optical path and the detection optical path can fully or partially overlap in the context of this document.
  • the objective NA area has a diameter corresponding to the width between two most oblique light rays captured by the objective lens, wherein the two most oblique light rays and the optical axis of the objective lens are in the same plane. Since the angle between each of the two most oblique light rays and the optical axis of the objective lens is determined by the objective NA, the objective NA area is therefore a fixed area and thus not plane-dependent.
  • the plurality of individually configurable illumination sources may be configured such that an entire of the illumination NA area is fillable by the illumination radiation.
  • Figures 6(a)-6(c) are associated with an embodiment where the illumination plane ILP is common (or coplanar) with the detection plane DTP.
  • Figure 6(a) schematically illustrates an illumination and detection arrangement IDA in accordance with an embodiment.
  • Figure 6(b) shows an objective NA area of the objective lens OB of the illumination and detection arrangement IDA.
  • Figure 6(c) shows an example arrangement of the individually configurable illumination sources and the at least one image sensor, both located in an illumination plane ILP.
  • the illumination and detection arrangement IDA may comprise an objective lens OB which defines an objective NA area ONA.
  • the objective NA area ONA may be divided into different portions, some of which may be used for illumination while others for detection.
  • the objective NA area ONA may be divided into four equally sized quadrants, namely a first quadrant Zl, a second quadrant Z2, a third quadrant Z3 and a fourth quadrant Z4. It will be appreciated that in different embodiments, the objective NA area ONA may be divided into any other number of zones which may or may not have a same size or shape.
  • the plurality of the individually configurable illumination sources may comprise a first array of illumination sources CIS 1 which may be aligned with the first quadrant Zl of the objective NA area ONA and a second array of illumination sources CIS2 which may be aligned with the third quadrant Z3 of the objective NA area ONA, the first quadrant Zl and the third quadrant Z3 being diagonally opposite to each other.
  • the first array of illumination sources CIS1 may comprise an area equal to, smaller or larger than that of the first quadrant Zl and the second array of illumination sources CIS2 may comprise an area equal to, smaller or larger than that of the third quadrant Z3.
  • the at least one image sensor may comprise a first image sensor IM1 (e.g., a CCD or CMOS sensor) which may be aligned with the second quadrant Z2 of the objective NA area ONA and a second image sensor IM2 (e.g., a CCD or CMOS sensor) which may be aligned with the fourth quadrant Z4 of the objective NA area ONA, the second quadrant Z2 and the fourth quadrant Z4 being diagonally opposite to each other.
  • the first image sensor IM1 may comprise an area equal to, smaller or larger than that of the second quadrant Z2 and the second image sensor IM2 may comprise an area equal to, smaller or larger than that of the fourth quadrant Z4.
  • the illumination NA area of the objective NA area ONA may correspond to the first and third quadrants Zl, Z3 and the detection NA area of the objective NA area ONA may correspond to the second and fourth quadrants Z2, Z4.
  • the first image sensor IM1 may be aligned with at least a third portion of the objective NA area and the second image sensor IM2 may be aligned with at least a fourth portion of the objective NA area, the at least a third portion and the at least a fourth portion being diagonally opposite to each other.
  • Each of the at least a third portion and the at least a fourth portion may be of any shape and may be either larger or smaller than a quadrant of the objective NA area.
  • the plurality of the individually configurable illumination sources CIS1, CIS2 and the at least one image sensor IM1, IM2 may both be in the illumination plane ILP which may be coplanar with the pupil plane of the objective lens OB.
  • the plurality of the individually configurable illumination sources CIS1, CIS2 and the at least one image sensor IM1, IM2 may be in a conjugate plane of the pupil plane of the objective lens OB. This may be the case when the pupil plane of the objective lens OB is located within the body of the objective lens OB.
  • one or more optical elements may be comprised between the objective lens OB and the plurality of the individually configurable illumination sources CIS1, CIS2 and the at least one image sensor IM1, IM2 (e.g., to form a conjugate plane of the pupil plane outside the body of the objective lens OB).
  • the plurality of individually configurable illumination sources (e.g., CIS1, CIS2) and the at least one image sensor (e.g., IM1, IM2) may be comprised in a single integral device or module.
  • the illumination and detection arrangement IDA may further comprise a control unit (not shown) configured to control the operation of all the illumination sources (e.g., CIS1, CIS2) and image sensors (e.g., IM1, IM2).
  • the control unit may be comprised in the single integral device.
  • the control unit may be part of a control system of a metrology tool in which the illumination and detection arrangement IDA is comprised.
  • the plurality of illumination sources may be provided by one or more arrays of microLEDs (Light Emitting Diodes which may be inorganic LED or organic LED, i.e. OLED), wherein each microLED acts as one individually configurable illumination source, i.e. the light output of each microLED can be individually controlled.
  • the output of each individually configurable microLED may comprise an output intensity, an output wavelength, an output bandwidth, and/or a polarization state.
  • Each microLED may be of the size of e.g., around 20 pm and the light emitted from each microLED may have a centre wavelength in a range of e.g., 400 nm to 900 nm.
  • MicroLED arrays may be defined by lithography steps, and have a large design freedom in dimension and layout.
  • the first and second microLED arrays CIS1, CIS2 may each have a rectangular shape.
  • the first and second micro LED arrays CIS1, CIS2 may each have the shape of the corresponding one of the two diagonally opposite quadrants Zl, Z3.
  • different LED diameters can be used (for example from "1 pm upwards) at different locations, and their spacing can be varied as needed. Practical limits of minimum pitch (center-to-center) spacing are determined by (micro-bump) bonding technology, currently around 20 pm.
  • the total size of the micoLED arrays CIS1, CIS2 may correspond to the illumination NA area, e.g., 50% (or two diagonally opposite quadrants) of the objective NA area ONA (e.g., having a diameter of 4 mm).
  • the objective NA area ONA can be larger or smaller.
  • the plurality of illumination sources may be provided by one or more arrays of vertical cavity surface emitting lasers (VCSELs), wherein each VCSEL acts as one individually configurable illumination source.
  • the plurality of illumination sources e.g., CIS1, CIS 2
  • the plurality of illumination sources may be provided by one or more arrays of micro LEDs and one or more arrays of VCSELs.
  • the operating state and output characteristics of each of the plurality of individually configurable illumination sources may be controllable e.g., by varying an input current to the illumination source.
  • the operating state of an illumination source may comprise an ON state in which the illumination source is powered to emit illumination radiation IR, and an OFF state in which the illumination source is turned off.
  • the characteristics of each individually configurable illumination source may comprise an output intensity, an output wavelength, an output bandwidth, and/or a polarization state.
  • the illumination and detection arrangement IDA may further comprise one or more optical elements (e.g., optical filters, polarizing elements) configured to help control the output characteristics of each of the plurality of individually configurable illumination sources.
  • the illumination and detection arrangement IDA may further comprise one or more optical apertures configured to block undesired diffraction orders (e.g., zeroth diffraction order) while maximally transmitting desired diffraction orders (e.g., a positive first diffraction order (+l st diffraction order) and a negative first diffraction order (-1 st diffraction order)).
  • some illumination sources of the first array CIS1 may be selectively activated (or switched on) to generate the illumination radiation IR having an illumination profile that substantially fills the first quadrant Z1 of the objective NA area ONA.
  • the interaction of the illumination radiation IR provided by the first array CIS 1 with the structure S on the wafer W in the object plane OBP may result in scattering of the -1 st diffraction order -l(IR).
  • the - 1 st diffraction order -l(IR) may be collected by the objective lens OB and propagate through the fourth quadrant Z4 of the objective NA area ONA before being detected by the second image sensor IM2.
  • some illumination sources of the second array CIS2 may be selectively activated (or switched on) to generate the illumination radiation (not shown) having an illumination profile that substantially fills the third quadrant Z3 of the objective NA area ONA.
  • the interaction of the illumination radiation provided by the second array CIS2 with the structure S on the wafer W in the object plane OBP may result in scattering of the +l st diffraction order (not shown).
  • the +l st diffraction order may be collected by the objective lens OB and subsequently detected by the first image sensor IM1.
  • Figures 7(a)-7(c) are associated with a different embodiment where the illumination plane ILP is between the detection plane DTP and the object plane OBP when seen along a detection optical path, said detection optical path being the path that the scattered radiation (e.g., - 1 (IR)) from the structure S follows towards the at least one image sensor IM (e.g., as indicated by the dash double-dot line in Figure 7(a)).
  • the main difference between the embodiment of Figures 6(a)-6(c) and the embodiment of Figures 7(a)-7(c) may lie in the detection part, e.g., the location of the image sensor IM and the detection plane DTP.
  • the same reference signs are used in both figures for the same or similar components.
  • Figure 7(a) schematically illustrates a illumination and detection arrangement IDA’ for a lithographic or inspection apparatus.
  • Figure 7(b) shows an objective NA area ONA of the objective lens OB of the illumination and detection arrangement IDA’.
  • Figure 7(c) shows an example arrangement of the individually configurable illumination sources and the at least one pair of optical wedges, both located in an illumination plane ILP which may be coplanar with the pupil plane of the objective lens OB.
  • the illumination and detection arrangement IDA’ shown in Figures 7(a)-7(c) may comprise no image sensors (e.g., IM1 and IM2 of IDA) in the illumination plane ILP.
  • the plurality of the individually configurable illumination sources may comprise a first array of illumination sources CIS1 which may be aligned with a first quadrant Zl of the objective NA area ONA and a second array of illumination sources CIS2 which may be aligned with a third quadrant Z3 of the objective NA area ONA, the first quadrant Zl and the third quadrant Z3 being diagonally opposite to each other.
  • the at least one pair of optical wedges may comprise a first pair of optical wedges OWP1 which may be aligned with a second quadrant Z2 of the objective NA area ONA and a second pair of optical wedges OWP2 which may be aligned with a fourth quadrant Z4 of the objective NA area ONA, the second quadrant Z2 and the fourth quadrant Z4 being diagonally opposite to each other.
  • the illumination and detection arrangement IDA’ may comprise one or more optical lenses OL between the illumination plane ILP and the detection plane DTP which may be configured to focus the re-directed at least one portion of the scattered radiation (e.g., the x-direction component and the y-direction component of the negative first diffraction order - 1(IR)) onto the corresponding part of the image sensor IM in the detection plane DTP.
  • the scattered radiation e.g., the x-direction component and the y-direction component of the negative first diffraction order - 1(IR)
  • the first array of illumination sources CIS 1 , the second array of illumination sources CIS2, the first pair of optical wedges OWP1 and the second pair of optical wedges OWP2 may all be comprised in a single integral device/module.
  • the illumination and detection arrangement IDA’ may further comprise a control unit (not shown) configured to control the operation of all the illumination sources (e.g., CIS1, CIS2) and (if desired) the movement of the optical wedges (e.g., OWP1, OWP2).
  • the control unit may be comprised in the single integral device.
  • the control unit may be part of a control system of a metrology tool in which the illumination and detection arrangement IDA’ is comprised.
  • the one or more optical lenses OL and/or the at least one pair of optical wedges OWP1, OWP2 are not essential. Therefore, in some embodiments, the optical lenses OL or the optical wedge pairs OWP1, OWP2 may not be present. In other embodiments, both of the optical lenses OL and optical wedge pairs OWP1, OWP2 may not be present. As such, there may comprise no physical components in the corresponding areas (in which the optical wedge pairs are located OWP1, OWP2) of the illumination plane ILP. Thus, the at least one portion of the scattered radiation (e.g., - 1(IR)) may travel through the illumination plane ILP without its propagation direction being altered.
  • the scattered radiation e.g., - 1(IR)
  • each of the first array of illumination sources CIS 1 and the second array of illumination sources CIS2 of the arrangement IDA’ may be of an array of microLEDs or an array of VCSELs, wherein each microLED or VCSEL acts as an individually configurable illumination source.
  • the plurality of illumination sources of the arrangement IDA’ may be provided by one or more transparent microLED (which may be inorganic LED or organic LED) panels, e.g., the first array of illumination sources CIS1 is provided by a first transparent microLED panel and the second array of illumination sources CIS2 is provided by a second transparent microLED panel.
  • the plurality of illumination sources of the arrangement IDA’ may be provided by a single transparent microLED panel.
  • the single transparent microLED panel may comprise an area equal to, smaller or larger than the objective NA area.
  • the radiation (e.g., 0 th diffraction order, +l st diffraction order, and -1 st diffraction order) scattered from the structure S may transmit through the transparent parts of the panel that are either outside or in-between LED pixels.
  • Additional optical elements e.g., apertures, optical masks, and/or optical wedges
  • the proposed illumination and detection arrangement (e.g., the arrangement IDA shown in Figures 6(a)-6(c) and/or the arrangement IDA’ shown in Figures 7(a)-7(c)) is capable of simplifying the design of an optical system (e.g., a metrology or lithographic system) which may lead to an improved performance and/or a reduced cost.
  • the proposed illumination and detection arrangement may provide further functionalities such as for example monitoring or determining a relative (lateral or vertical) shift between the wafer and the focused illumination beam in a metrology tool.
  • a change in the incidence angle of the scattered radiation may translate into a lateral shift (e.g., a shift in the plane defined by the X-axis and the Y-axis) of the scattered radiation in the illumination plane ILP with respect to the first image sensor IM1 and/or the second image sensor IM2.
  • the two images formed respectively on the first image sensor IM1 and the second image sensor IM2 may move in opposite directions with respect to the image sensor IM when the wafer W is vertically shifted with respect to the focus of the illumination radiation IR, which may result in defocusing of the optical system and thus degradation of the system performance.
  • a relative vertical shift between the wafer W and the focus of the illumination beam IR may be a result of only a vertical shift of the wafer W, or a result of only a vertical shift of the focus of the illumination radiation IR, or a combined result of a vertical shift of the wafer W and a vertical shift of the focus of the illumination radiation IR.
  • a determined relative vertical shift between the wafer W and the focus of the illumination beam IR may provide useful information for optimization of the focusing condition of the optical system, thereby minimizing or obviating the defocusing-induced performance degradation.
  • the arrangement IDA’ may still allow a relative vertical shift between the wafer W and the focus of the illumination beam IR to be determined by monitoring a change in the position of the scattered radiation on the image sensor IM.
  • the method may further comprise determining a lateral shift of the scattered radiation in the detection plane with respect to the at least one image sensor; and determining a relative vertical shift between the structure and a focus of the illumination radiation.
  • the method may further comprise adjusting, based on the determined relative vertical shift, a vertical position of the structure and/or the focus of the illumination radiation to optimize the focusing of the illumination radiation on the structure in the object plane.
  • the method may further comprise determining a lateral shift of the scattered radiation in the detection plane with respect to the at least one image sensor; and determining a relative lateral shift between the structure and a focus of the illumination radiation.
  • the method may further comprise adjusting, based on the determined relative lateral shift, a lateral position of the structure and/or the focus of the illumination radiation to optimize alignment of the structure with respect to a reference and/or positioning of the scattered radiation on the at least one image sensor.
  • An illumination and detection arrangement for a metrology arrangement comprising: a plurality of individually configurable illumination sources located in an illumination plane, wherein each of the plurality of individually configurable illumination sources is operable to emit illumination radiation; an objective lens defining an objective NA area and configured to receive the illumination radiation, focus it onto a structure in an object plane, and subsequently collect radiation scattered from the structure upon illumination; and at least one image sensor located in a detection plane and configured to detect at least one portion of the scattered radiation collected by the objective lens and record an image associated with the structure; wherein the at least one portion of the scattered radiation either is detected at or passes through the illumination plane.
  • illumination and detection arrangement as defined in any preceding clause, wherein the illumination plane is substantially coplanar with the detection plane and the plurality of individually configurable illumination sources is spatially separate from the at least one image sensor.
  • the plurality of the individually configurable illumination sources comprises a first array of illumination sources aligned with at least a first portion of the objective NA area and a second array of illumination sources aligned with at least a second portion of the objective NA area, the at least a first portion and the at least a second portion being diagonally opposite to each other.
  • each of the plurality of individually configurable illumination sources is configurable to change at least one or more of: an ON/OFF state, an output intensity, an output wavelength, and an output bandwidth.
  • a lithographic device comprising an illumination and detection arrangement as defined in any of clauses 1 to 27.
  • a method as defined in clause 34 further comprising: adjusting, based on the determined relative lateral shift, a lateral position of the structure and/or the focus of the illumination radiation to optimize alignment of the structure with respect to a reference and/or positioning of the scattered radiation on the at least one image sensor.
  • Embodiments of the invention may form part of a mask inspection apparatus, a lithographic apparatus, or any apparatus that measures or processes an object such as a wafer (or other substrate) or mask (or other patterning device).
  • the term “metrology apparatus” may also refer to an inspection apparatus or an inspection system.
  • the inspection apparatus that comprises an embodiment of the invention may be used to detect defects of a substrate or defects of structures on a substrate.
  • a characteristic of interest of the structure on the substrate may relate to defects in the structure, the absence of a specific part of the structure, or the presence of an unwanted structure on the substrate.
  • the inspection or metrology apparatus that comprises an embodiment of the invention may be used to determine characteristics of structures on a substrate or on a wafer.
  • the inspection apparatus or metrology apparatus that comprises an embodiment of the invention may be used to detect defects of a substrate or defects of structures on a substrate or on a wafer.
  • a characteristic of interest of the structure on the substrate may relate to defects in the structure, the absence of a specific part of the structure, or the presence of an unwanted structure on the substrate or on the wafer.
  • pitch P of the metrology targets may be close to the resolution limit of the optical system of the scatterometer or may be smaller, but may be much larger than the dimension of typical product features made by lithographic process in the target portions C.
  • the lines and/or spaces of the overlay gratings within the target structures may be made to include smaller structures similar in dimension to the product features.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

L'invention concerne un agencement d'éclairage et de détection pour un appareil lithographique ou d'inspection, l'agencement comprenant : une pluralité de sources d'éclairage qui peuvent être configurées de manière individuelle et qui sont situées dans un plan d'éclairage, chacune d'elles pouvant être utilisée pour émettre un rayonnement d'éclairage ; une lentille d'objectif qui définit une zone d'objectif NA et qui est conçue pour recevoir le rayonnement d'éclairage, pour le focaliser sur une structure dans un plan d'objet, et pour ensuite collecter un rayonnement diffusé par la structure lorsqu'elle est éclairée ; et au moins un capteur d'image situé dans un plan de détection et conçu pour détecter au moins une partie du rayonnement diffusé collecté par la lentille d'objectif et pour enregistrer une image associée à la structure ; la ou les parties du rayonnement diffusé étant soit détectées au niveau du plan d'éclairage, soit transmises à travers celui-ci.
PCT/EP2025/051256 2024-02-12 2025-01-20 Agencement d'éclairage et de détection et procédé pour agencement de métrologie Pending WO2025171992A1 (fr)

Applications Claiming Priority (4)

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EP24157102.5A EP4600746A1 (fr) 2024-02-12 2024-02-12 Agencement d'éclairage et de détection et procédé pour un agencement de métrologie
EP24157102.5 2024-02-12
EP24195601.0 2024-08-21
EP24195601 2024-08-21

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