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WO2025156174A1 - Concentrateur de lumière à miroir actif pour pompage laser - Google Patents

Concentrateur de lumière à miroir actif pour pompage laser

Info

Publication number
WO2025156174A1
WO2025156174A1 PCT/CN2024/073951 CN2024073951W WO2025156174A1 WO 2025156174 A1 WO2025156174 A1 WO 2025156174A1 CN 2024073951 W CN2024073951 W CN 2024073951W WO 2025156174 A1 WO2025156174 A1 WO 2025156174A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
concentrator
laser
laser crystal
reflectors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/CN2024/073951
Other languages
English (en)
Inventor
Yen-Chieh Huang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ledlas Corp
Original Assignee
Ledlas Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ledlas Corp filed Critical Ledlas Corp
Priority to PCT/CN2024/073951 priority Critical patent/WO2025156174A1/fr
Publication of WO2025156174A1 publication Critical patent/WO2025156174A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/094049—Guiding of the pump light
    • H01S3/094057—Guiding of the pump light by tapered duct or homogenized light pipe, e.g. for concentrating pump light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0602—Crystal lasers or glass lasers
    • H01S3/0606—Crystal lasers or glass lasers with polygonal cross-section, e.g. slab, prism
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0602—Crystal lasers or glass lasers
    • H01S3/061—Crystal lasers or glass lasers with elliptical or circular cross-section and elongated shape, e.g. rod
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0087—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar

Definitions

  • the disclosure relates to a light concentrator for pumping laser, and more particularly to a widening wedge-shaped light concentrator that can concentrate light and output concentrated light through an opening aperture, and a laser pumping system that includes the widening wedge-shaped light concentrator.
  • Optical laser pumping is a process that uses light to excite an active laser medium to raise atoms in the active medium from a low-energy level to a higher one.
  • the atoms When nearby photons stimulate the atoms to drop back to a lower energy level, the atoms emit more photons with the same characteristics as the nearby photons.
  • This process is called light amplification by stimulated emission of radiation or laser.
  • a solid-state laser usually utilizes either a flashlamp or a laser diode that emits pump light to optically pump a laser crystal, ultimately generating a laser beam.
  • the laser beam is highly collimated, unlike the pump light, which sometimes scatters over a broader volume in space.
  • U.S. Patent Application Publication No. 2016/0322775 A1 discloses a laser amplifier side-pumped by multiple laser-diode stacks, in which the light-coupling ducts that are narrowing wedge-shaped structures guide and concentrate diverging light from large input apertures (adjacent to the laser diode stacks) toward smaller output apertures (adjacent to a laser medium) .
  • the majority of the light either escapes through the side walls of the dielectric wedge or reflects backward and exit the large input aperture. Only a limited amount of the light can actually reach and pump the laser crystal.
  • an object of the disclosure is to provide a light concentrator that can alleviate at least one of the drawbacks of the prior art.
  • the light concentrator includes two light reflectors connected to each other with an angle on one end of the light concentrator to form a widening wedge-shaped structure with an opening aperture on an opposite end of the light concentrator.
  • Each of the light reflectors has a surface for light incident thereupon to produce reflected light.
  • At least one of the light reflectors is an active mirror device that includes a substrate having a smooth reflective surface, and a plurality of light-emitting elements disposed on the smooth reflective surface of the substrate.
  • Each of the light-emitting elements includes a bottom reflector that is provided on the substrate, and an active layer that is disposed on the bottom reflector. The active layer actively generates actively emitted light when an electric current is applied.
  • the reflective surface of the substrate and the light-emitting elements all reflect incident light to produce reflected light.
  • each of the light-emitting elements can amplify incident light, when the incident light is reflected by the bottom reflector and re-enters the active layer, to produce amplified reflected light.
  • the light is amplified when the incident light traverses the active layer. Concentrated light that includes one of the actively emitted light, the reflected light, the amplified reflected light, and any combination thereof exits the widening-wedge light concentrator through the opening aperture.
  • Another object of the disclosure is to provide the active mirror device mentioned above.
  • the laser pumping system includes a laser crystal and at least one light concentrator mentioned above.
  • the opening aperture of at least one of the at least one light concentrator is adjacent to the laser crystal. Concentrated light exiting the opening aperture of the light concentrator enters the laser crystal to provide laser gain.
  • Figure 1 is a schematic view illustrating an embodiment of a light concentrator according to the disclosure.
  • Figure 2 is an exploded schematic view of the light concentrator, illustrating the disassembly of a top one of two light reflectors.
  • Figure 3 is a top view illustrating an embodiment of an active mirror device including an array of light-emitting elements on a reflecting layer which is on a substrate layer according to the disclosure.
  • Figure 4 is a cross-sectional view illustrating one of the light-emitting elements according to one embodiment of the disclosure.
  • Figures 5 to 8 are schematic views illustrating various embodiments of a light concentrator according to the disclosure.
  • Figures 9 and 10 are schematic views illustrating an embodiment of a laser pumping system adopting one light concentrator according to the disclosure.
  • Figures 11 to 16 are cross-sectional views illustrating other embodiments of a laser pumping system adopting multiple light concentrators according to the disclosure.
  • an embodiment of a light concentrator 1000a includes two light reflectors connected to each other with an angle ⁇ on the left end, as illustrated in Figure 1, to form a widening wedge-shaped structure to guide light toward an opening aperture 800 on the right end of the light concentrator 1000a.
  • the term “opening” refers to a gradually enlarging passage for light propagating in the widening wedge-shaped structure.
  • the angle ⁇ falls within a range of greater than 0 degrees and less than 90 degrees.
  • the light reflectors may be connected directly or indirectly on the left end (through an intermediary) .
  • the two lateral sides of the wedge-shaped structure may be covered by two reflective layers 300a including materials, such as dielectric or metal.
  • one of the light reflectors is an active mirror device 200 as shown in Figures 3 and 4
  • the other light reflector e.g., the top one
  • a mirror reflector 500 that includes a base layer 501 with a smooth surface (e.g., the lower surface) , such as a glass plate, and a high-reflection layer 300 coated on the smooth surface of the base layer 501.
  • a material of the high-reflection layer 300 and reflective layers 300a may include at least one of dielectric, aluminum (Al) , silver (Ag) , or gold (Au) films, etc.
  • the active mirror device 200 is attached to a cooling plate (not shown) for heat removal from light-emitting elements 230.
  • the active mirror device 200 includes a substrate which includes a substrate layer 210 and a reflecting layer 220 on the substrate layer 210, and an array of light-emitting elements 230 which is disposed on and bonded to the reflecting layer 220. As shown in Figure 3, the active mirror device 200 functions as a planar light source. When powered by a power supply (not shown) through appropriate wiring, the light-emitting elements 230 emit light 290 ( Figure 4) , which will hereinafter also be referred to as “actively emitted light 290. ”
  • the substrate layer 210 has high thermal conductivity for efficient heat dissipation of the light-emitting elements 230.
  • the reflecting layer 220 has a smooth reflective surface, and may be a metal film, such as silver or gold, which has both high thermal conductivity and high reflectivity.
  • Each of the light-emitting elements 230 may include a built-in bottom reflector 238, which is provided on the reflecting layer 220 and directs light upwards, and an active layer 233 which is disposed on the bottom reflector 238.
  • the active layer 233 may include, but not limited to, a P-type semiconductor layer, an N-type semiconductor layer, and an active region formed between the P-type semiconductor layer and the N-type semiconductor layer.
  • the active layer 233 actively generates the actively emitted light 290 when an electric current is applied.
  • a material of the active layer 233 may include a conductor or semiconductor material, such as Al, In, Ga, As, Ze, Se, P, or any combination thereof.
  • the bottom reflector 238 may include one of a gold layer, a distributed Bragg reflector (DBR) , and a combination thereof.
  • DBR distributed Bragg reflector
  • Figure 4 is not drawn to scale, and the relative size of the light-emitting elements 230 with respect to the substrate layer 210 is exaggerated for clarity; in reality, the light-emitting elements 230 are extremely thin, with an order of magnitude between a few hundred nanometers and a few microns.
  • the substrate layer itself has a smooth reflective surface, and the plurality of light-emitting elements are disposed on and bonded to the smooth reflective surface of the substrate layer, and hence no reflecting layer is required.
  • the opening aperture 800 of the light concentrator 1000a is, for example, at the right end of the light concentrator 1000a, as shown in Figure 1.
  • a light ray is emitted vertically (marked as L 1 ) from one of the light-emitting elements 230 of the active mirror device 200 that is positioned at the bottom, based on the law of reflection (i.e., the angle of reflection is equal to the angle of incidence)
  • the light ray (L 1 ) takes a zigzag path and travels to the opening aperture 800 with the angles of incidence and reflection being progressively larger on the surfaces of the two light reflectors.
  • the light concentrator 1000a is a unidirectional light guide and concentrator. Furthermore, in the direction in which concentrated light is guided toward the opening aperture 800 of the light concentrator 1000a, the wedge-shaped structure exhibits a widening shape. That is to say, the light inside the structure always travels and concentrates toward a widening wedge structure.
  • the actively emitted light 290 from one of the light-emitting elements 230 may become an incident light 270 on the high-reflection layer 300 or the reflecting layer 220 of the light concentrator 1000a.
  • the active mirror device 200 it is the reflecting layer 220 that reflects the incident light 270 to produce a reflected light 280.
  • the incident light 270 is incident on one light-emitting element 230 and traverses the active layer 233 thereof.
  • the active layer 233 then amplifies the reflected light to form an amplified reflected light 285, because the active layer 233 is a gain medium for generating light.
  • the active mirror device 200 can serve as a combination of a light emitter, a light reflector, and a light amplifier. Concentrated light, which includes one of the actively emitted light 290, the reflected light 280, the amplified reflected light 285 and any combination thereof, is guided to exit the light concentrator 1000a through the opening aperture 800.
  • a light concentrator 1000b includes two light reflectors that are both active mirror devices 200. That is, the mirror reflector 500 of the light concentrator 1000a in Figure 1 is replaced with another active mirror device 200.
  • both light reflectors are active mirror devices 200
  • the overall amount of light emitted, reflected, and amplified is increased.
  • the intensity of light exiting the opening aperture 800 of the light concentrator 1000b is also proportionally increased.
  • a light concentrator 1000c includes two light reflectors and a dielectric wedge 450 between the two light reflectors.
  • the two light reflectors of the light concentrator 1000c are respectively an active mirror device 200 (positioned at the bottom) and a high-reflection layer 300 (positioned at the top) coated on an upper surface of the dielectric wedge 450.
  • a material of the high-reflection layer 300 may include at least one of Al, Ag, Au, or dielectric, etc., so as to reflect the light emitted from the active mirror device 200.
  • the dielectric wedge 450 is filled in a space between the two light reflectors.
  • the dielectric wedge 450 may be made of a dielectric material, such as glass or plastic, transparent to light.
  • the light concentrator 1000c further includes an anti-reflection layer 350 coated on a lower surface of the dielectric wedge 450, so as to enhance light transmission and minimize reflection loss between the dielectric wedge 450 and the active mirror device 200.
  • a light concentrator 1000d includes two light reflectors same as those of the light concentrator 1000c described above, a luminescent wedge 460, and an anti-reflection layer 350 coated on a bottom surface of the luminescent wedge 460. That is, the dielectric wedge 450 of the light concentrator 1000c in Figure 6 is replaced by the luminescent wedge 460 to obtain the light concentrator 1000d.
  • the luminescent wedge 460 includes a wedge similar to the dielectric wedge 450 doped with luminescent elements 600, such as fluorescent, phosphorescent dyes or quantum dots. The luminescent elements 600 convert the actively emitted light 290 of a wavelength from the active mirror device 200 into luminescence light of another wavelength.
  • the luminescence light is then guided and concentrated toward the opening aperture 800.
  • the active mirror device 200 may emit blue light
  • the luminescent elements 600 that include cerium-doped yttrium aluminum garnet (Ce: YAG) may be excited by the blue light to generate luminescence in the yellow-orange-red spectrum.
  • Yellow-orange-red light is then guided by the light concentrator 1000d toward the opening aperture 800.
  • a light concentrator 1000e includes two light reflectors, a luminescent wedge 460 as described above.
  • the two light reflectors are both active mirror devices 200.
  • two anti-reflection layers 350 may be coated on a bottom surface and a top surface of the luminescent wedge 460, respectively.
  • a single-side laser pumping system 100a includes a laser crystal 700 with a rectangular cross section, the light concentrator 1000, and a cooling housing 750 for heat dissipation (not shown in Figure 9) .
  • Figure 10 is a cross sectional view of Figure 9 showing a cut across the rectangular aperture of the laser crystal 700 and further showing the cooling housing 750.
  • the laser crystal 700 and the light concentrator 1000 are installed in the cooling housing 750 for heat dissipation.
  • the laser crystal 700 has four side surfaces that are front, rear, top and bottom side surfaces, and is installed in a laser cavity formed by two cavity mirrors 910 and 920.
  • the opening aperture 800 of the light concentrator 1000 is adjacent to one of the side surfaces of the laser crystal 700, e.g., the front-side surface.
  • the light concentrator 1000 outputs pump light (i.e., the concentrated light mentioned above) through the opening aperture 800 to the laser crystal 700, and the laser crystal 700 in the laser cavity absorbs the pump light to generate laser radiation 930 via stimulated emission.
  • the single-side laser pumping system 100a further includes an anti-reflection layer 350 and a high-reflection layer 300 coated on the front-side and rear-side surfaces of the laser crystal 700, respectively.
  • the anti-reflection layer 350 is to increase the pump-light transmission into the laser crystal 700
  • the high-reflection layer 300 is to reflect and re-use the unabsorbed pump light in the laser crystal 700.
  • the laser crystal 700 may be one of a neodymium-doped YAG (Nd: YAG) crystal, a ytterbium-doped YAG (Yb: YAG) crystal, a holmium-chromium-thulium triple-doped YAG (Ho: Cr: Tm: YAG) crystal, a neodymium-doped yttrium orthovanadate (Nd: YVO 4 ) crystal, an erbium-doped YAG (Er: YAG) crystal, a chromium-doped colquiriite (Cr: LiSAF) crystal, a titanium-doped sapphire (Ti: sapphire) crystal, a chromium crystal, an erbium: yttrium scandium gallium garnet (Cr, Er: YSGG) crystal, an alexandrite crystal, an erbium-doped phosphate glass (Er:
  • a double-side laser pumping system 100b includes the laser crystal 700 with a rectangular cross section, two light concentrators 1000, and the cooling housing 750 for heat dissipation.
  • the two light concentrators 1000 are positioned at two adjacent sides of the laser crystal 700.
  • the opening apertures 800 of the light concentrators 1000 are adjacent to, specifically are arranged to face the front-side surface and the top-side surface of the laser crystal 700.
  • the double-side laser pumping system 100b further includes two anti-reflection layers 350 coated on the front-side surface and the top-side surface of the laser crystal 700, and two high-reflection layers 300 coated on the rear-side surface and the bottom-side surface of the laser crystal 700.
  • the anti-reflection layers 350 are to increase the pump-light transmission into the crystal
  • the high-reflection layers 300 are to reflect and re-use the unabsorbed pump light in the laser crystal 700.
  • Each of the light concentrators 1000 outputs pump light (i.e., the concentrated light mentioned above) through the opening aperture 800 to the laser crystal 700, and the laser crystal 700 in a laser cavity absorbs the pump light to generate laser radiation 930 ( Figure 9) via stimulated emission.
  • the two light concentrators 1000 are oppositely aligned and positioned at two opposite sides of the laser crystal 700.
  • the opening apertures 800 of the light concentrators 1000 are arranged to face the front-side surface and the rear-side surface of the laser crystal 700, respectively in such a way that pump light emitted by both light concentrators 1000 is directed to pump the laser crystal 700.
  • a laser pumping system 100c includes a laser crystal 700' with a circular cross section, two light concentrators 1000, and the cooling housing 750 for dissipating heat from the active mirror devices.
  • the laser pumping system 100c may further include a transparent tube 550 with cooling liquid 560 flowing therethrough for removing heat from the laser crystal 700', and the laser crystal 700' is installed by means of, for instance, a rubber seal, in the transparent tube 550.
  • the opening apertures 800 of the light concentrators 1000 are adjacent to the laser crystal 700', specifically are attached to a first part and a second part of a circumferential surface of the transparent tube 550, respectively.
  • the first part and the second part may each constitute, for example but not limited to, one-third of the circumferential surface of the transparent tube 550, as shown in Figure 13, or one-half of the circumferential surface of the transparent tube 550 as shown in Figure 14 and Figure 15.
  • the bottom ones of the light reflectors of the light concentrators 1000 are on the same horizontal plane.
  • a multi-side laser pumping system 100d includes a laser crystal 700' with a circular cross section, more than two light concentrators 1000, the transparent tube 550 with cooling liquid 560 flowing therethrough for removing heat from the laser crystal 700', and the cooling housing 750 for dissipating heat from the active mirror devices.
  • the opening apertures 800 of the light concentrators 1000 are attached to the circumferential surface of the transparent tube 550, and the pump light emitted by all of the light concentrators 1000 is directed to the laser crystal 700'.
  • the light concentrator 1000 having the active mirror device 200 forming a widening wedge-shaped structure, all light in the structure is effectively concentrated toward the laser crystal 700 through the opening aperture 800, thereby achieving highly efficient laser pumping.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Lasers (AREA)

Abstract

L'invention concerne un concentrateur de lumière (1000a) comprenant deux réflecteurs de lumière reliés l'un à l'autre avec un angle sur une extrémité pour former une structure en forme de coin d'élargissement avec un diaphragme d'ouverture (800) sur l'extrémité opposée. Au moins l'un des réflecteurs de lumière est un dispositif à miroir actif (200) qui comprend un substrat ayant une surface réfléchissante lisse, et une pluralité d'éléments électroluminescents (230) disposés sur la surface réfléchissante lisse. La lumière émise par les éléments électroluminescents (230) est réfléchie, amplifiée et concentrée vers le diaphragme d'ouverture (800) pour pomper un cristal (700) pour générer un rayonnement laser (930). La structure en forme de coin d'élargissement du concentrateur de lumière (1000a) peut être remplie de matériaux luminescents pour convertir la lumière d'une longueur d'onde provenant des éléments électroluminescents (230) en une lumière de luminescence d'une autre longueur d'onde pour pomper un cristal (700) pour générer un rayonnement laser (930).
PCT/CN2024/073951 2024-01-25 2024-01-25 Concentrateur de lumière à miroir actif pour pompage laser Pending WO2025156174A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/CN2024/073951 WO2025156174A1 (fr) 2024-01-25 2024-01-25 Concentrateur de lumière à miroir actif pour pompage laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2024/073951 WO2025156174A1 (fr) 2024-01-25 2024-01-25 Concentrateur de lumière à miroir actif pour pompage laser

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US20050281309A1 (en) * 2004-06-19 2005-12-22 Samsung Electronics Co., Ltd. Highly efficient surface emitting laser device, laser-pumping unit for the laser device, and method of manufacturing the laser-pumping unit
CN101355130A (zh) * 2007-07-23 2009-01-28 三星电机株式会社 半导体发光器件
CN103620455A (zh) * 2011-06-24 2014-03-05 皇家飞利浦有限公司 具有用于混合来自多个led的光输出的光学部件的基于led的照明单元
CN104247170A (zh) * 2012-04-26 2014-12-24 皇家飞利浦有限公司 具有自对准泵浦光学器件的光学泵浦的固态激光器设备
US20160322775A1 (en) * 2013-12-27 2016-11-03 Academy Of Opto-Electronics, Chinese Academy Of Sciences Large-Aperture Laser Amplifier Side-Pumped by Multi-Dimensional Laser Diode Stack
CN110137788A (zh) * 2019-05-30 2019-08-16 中国科学院理化技术研究所 一种降低能量集中度缓解热效应的侧面泵浦激光头装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050281309A1 (en) * 2004-06-19 2005-12-22 Samsung Electronics Co., Ltd. Highly efficient surface emitting laser device, laser-pumping unit for the laser device, and method of manufacturing the laser-pumping unit
CN101355130A (zh) * 2007-07-23 2009-01-28 三星电机株式会社 半导体发光器件
CN103620455A (zh) * 2011-06-24 2014-03-05 皇家飞利浦有限公司 具有用于混合来自多个led的光输出的光学部件的基于led的照明单元
CN104247170A (zh) * 2012-04-26 2014-12-24 皇家飞利浦有限公司 具有自对准泵浦光学器件的光学泵浦的固态激光器设备
US20160322775A1 (en) * 2013-12-27 2016-11-03 Academy Of Opto-Electronics, Chinese Academy Of Sciences Large-Aperture Laser Amplifier Side-Pumped by Multi-Dimensional Laser Diode Stack
CN110137788A (zh) * 2019-05-30 2019-08-16 中国科学院理化技术研究所 一种降低能量集中度缓解热效应的侧面泵浦激光头装置

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