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WO2025153240A1 - Réattribution d'écoulement gazeux dans une source de lumière - Google Patents

Réattribution d'écoulement gazeux dans une source de lumière

Info

Publication number
WO2025153240A1
WO2025153240A1 PCT/EP2024/085365 EP2024085365W WO2025153240A1 WO 2025153240 A1 WO2025153240 A1 WO 2025153240A1 EP 2024085365 W EP2024085365 W EP 2024085365W WO 2025153240 A1 WO2025153240 A1 WO 2025153240A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas flow
flow conduit
gas
flow path
aspects
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/EP2024/085365
Other languages
English (en)
Inventor
Alex James FRENZEL
Niels BRAAKSMA
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of WO2025153240A1 publication Critical patent/WO2025153240A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation
    • H05G2/0094—Reduction, prevention or protection from contamination; Cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • H05G2/0035—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state the material containing metals as principal radiation-generating components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H05G2/0082—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam

Definitions

  • FIG. 1 shows a reflective lithographic apparatus, according to some aspects.
  • FIGS . 2A, 2B, and 3 show more details of a reflective lithographic apparatus, according to some aspects.
  • FIG. 4 shows a lithographic cell, according to some aspects.
  • FIG. 5 shows a source material delivery system, according to some aspects.
  • FIG. 7A and 7B show an embodiment of a gas flow conduit during a hit mode and a miss mode, according to some aspects.
  • FIG. 8A and 8B show an additional embodiment of a gas flow conduit during a hit mode and a miss mode, according to some aspects.
  • FIG. 8C and 8D show another embodiment of a gas flow conduit during a hit mode and a miss mode, according to some aspects.
  • FIG. 9 shows a method of altering a gas flow path in a light source, according to some aspects.
  • FIG 10 shows a gas flow in a chamber directly after an on-off droplet transition, according to some aspects.
  • spatially relative terms such as “beneath,” “below,” “lower,” “above,” “on,” “upper” and the like, can be used herein for ease of description to describe one element or feature’s relationship to another element(s) or feature(s) as illustrated in the figures.
  • the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures.
  • the apparatus can be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein can likewise be interpreted accordingly.
  • lithographic apparatus 100 can be of a type in which at least a portion of the substrate can be covered by a liquid having a relatively high refractive index, e.g., water, so as to fill a space between the projection system and the substrate.
  • a liquid having a relatively high refractive index e.g., water
  • An immersion liquid can also be applied to other spaces in the lithographic apparatus, for example, between the mask and the projection system. Immersion techniques can increase the numerical aperture of projection systems.
  • immersion as used herein does not mean that a structure, such as a substrate, must be submerged in liquid.
  • a liquid can be located between the projection system and the substrate during exposure.
  • Illuminator IL can receive a radiation beam from a radiation source SO.
  • Source SO and lithographic apparatus 100 can be separate physical entities. In such cases, source SO is not considered to be part of lithographic apparatus 100 and radiation beam B can pass from source SO to illuminator IL with the aid of a beam delivery system (not shown), which can include, for example, suitable directing mirrors and/or a beam expander. In other cases, source SO can be an integral part of the lithographic apparatus 100.
  • a radiation system can comprise source SO, illuminator IL, and/or beam delivery system BD.
  • first positioner PM and another position sensor IF1 can be used to accurately position the patterning device (for example, mask) MA with respect to the path of the radiation beam B.
  • Patterning device MA and substrate W can be aligned using mask alignment marks Ml, M2 and substrate alignment marks Pl, P2.
  • lithographic apparatus 100 can be used in at least one of the following modes: [0047] 1 In step mode, support structure MT and substrate table WT can be kept essentially stationary, while an entire pattern imparted to radiation beam B is projected onto a target portion C at one time (e.g., a single static exposure). Substrate table WT can then be shifted in the X and/or Y direction so that a different target portion C can be exposed.
  • support structure MT and substrate table WT can be scanned synchronously while a pattern imparted to radiation beam B is projected onto a target portion C (e.g., a single dynamic exposure).
  • the velocity and direction of substrate table WT relative to support structure MT can be determined by (de-)magnification and image reversal characteristics of projection system PS.
  • support structure MT can be kept substantially stationary holding a programmable patterning device, and substrate table WT can be moved or scanned while a pattern imparted to radiation beam B is projected onto a target portion C.
  • a pulsed radiation source SO can be employed and the programmable patterning device is updated after each movement of substrate table WT or in between successive radiation pulses during a scan.
  • This mode of operation can be readily applied to maskless lithography that utilizes a programmable patterning device, such as a programmable mirror array.
  • collector chamber 212 can comprise a radiation collector CO.
  • Radiation collector CO can be a so-called grazing incidence collector.
  • Radiation collector CO can comprise an upstream radiation collector side 251 and a downstream radiation collector side 252.
  • Radiation that traverses radiation collector CO can be reflected off a grating spectral filter 240 to be focused in a virtual source point INTF.
  • Virtual source point INTF can be referred to as the intermediate focus.
  • Source collector apparatus can be arranged such that the intermediate focus INTF is located at or near an opening 219 of enclosing structure 220.
  • the virtual source point INTF can be an image of the EUV radiation emitting plasma 210.
  • Grating spectral filter 240 can be used for suppressing infrared (IR) radiation.
  • Illumination system IL can include a faceted field mirror device 222 and a faceted pupil mirror device 224 arranged to provide a desired angular distribution of radiation beam 221, at patterning device MA, as well as a desired uniformity of radiation intensity at patterning device MA.
  • a patterned beam 226 is formed and the patterned beam 226 is imaged by projection system PS via reflective elements 228, 229 onto substrate W held by the wafer stage or substrate table WT.
  • other configurations of mirrors and/or optical devices can be used to direct radiation beam 221 to patterning device MA.
  • Grating spectral filter 240 can optionally be present, depending upon the type of lithographic apparatus. Further, there can be more mirrors present than those shown in the FIG. 2A, for example there can be one to six additional reflective elements present in the projection system PS than shown in FIG 2A
  • uniformity compensator UC, sensor ES, and/or measurement sensor MS shown in FIGS. 2A and 2B can be as described above in reference to FIG. 1.
  • Collector CO also called a collector mirror or collector optic
  • Collector CO is depicted as an example of a nested collector with grazing incidence reflectors 253, 254, and 255.
  • Grazing incidence reflectors 253, 254, and 255 can be disposed axially symmetric around an optical axis O.
  • a collector of this type can be used in combination with a discharge-generated plasma source, often called a DPP source.
  • FIG. 2B shows a portion of lithographic apparatus 100 (e.g., FIG. 1), but with alternative collection optics in source SO, according to some aspects. It should be appreciated that structures shown in FIG. 2A that do not appear in FIG. 2B (for drawing clarity) can still be included in aspects referring to FIG. 2B. Elements in FIG. 2B having the same reference numbers as those in FIG 2A have the same or substantially similar structures and functions as described in reference to FIG. 2A.
  • the lithographic apparatus 100 can be used, for example, to expose a substrate W such as a resist -coated wafer with a patterned beam of EUV illumination.
  • a substrate W such as a resist -coated wafer with a patterned beam of EUV illumination.
  • the light pulses can travel along one or more beam paths from the laser system 302 and into the chamber 212 to illuminate a source material at an irradiation region 304 to generate a plasma (e.g., plasma region located at EUV radiation emitting plasma 210 in FIG. 2B) that produces EUV light for substrate exposure in the exposure device 256.
  • a plasma e.g., plasma region located at EUV radiation emitting plasma 210 in FIG. 2B
  • laser system 302 can comprise a pulsed laser device, e.g., a pulsed gas discharge CO2 laser device producing radiation at 9.3 pm or 10.6 pm, e.g., with DC or RF excitation, operating at relatively high power, e.g., 10 kW or higher and high pulse repetition rate, e.g., 50 kHz or more.
  • a pulsed laser device e.g., a pulsed gas discharge CO2 laser device producing radiation at 9.3 pm or 10.6 pm, e.g., with DC or RF excitation, operating at relatively high power, e.g., 10 kW or higher and high pulse repetition rate, e.g., 50 kHz or more.
  • the laser can be an axial-flow RF-pumped CO2 laser having an oscillator amplifier configuration (e.g., master oscillator/power amplifier (MOPA) or power oscillator/power amplifier (POPA)) with multiple stages of amplification and having a seed pulse that is initiated by a Q-switched oscillator with relatively low energy and high repetition rate, e.g., capable of 100 kHz operation. From the oscillator, the laser pulse can then be amplified, shaped and/or focused before reaching the irradiation region 304. Continuously pumped CO2 amplifiers can be used for the laser system 302. Alternatively, the laser can be configured as a so-called “self-targeting” laser system in which the droplet serves as one mirror of the optical cavity of the laser.
  • an oscillator amplifier configuration e.g., master oscillator/power amplifier (MOPA) or power oscillator/power amplifier (POPA)
  • MOPA master oscillator/power amplifier
  • POPA power oscillator/power amplifier
  • source SO can also comprise a beam conditioning unit 306 having one or more optics for beam conditioning, such as expanding, steering, and/or focusing the beam between the laser system 302 and irradiation region 304.
  • a steering system which can comprise one ormore mirrors, prisms, lenses, etc., can be provided and arranged to steer the laser focal spot to different locations in the chamber 212.
  • the steering system can comprise a first flat mirror mounted on a tip-tilt actuator, which can move the first mirror independently in two dimensions, and a second flat mirror mounted on a tip-tilt actuator which can move the second mirror independently in two dimensions.
  • the steering system can controllably move the focal spot in directions substantially orthogonal to the direction of beam propagation (beam axis or optical axis).
  • the source SO can also comprise a source material delivery system 308 for delivering source material, such as tin droplets, to irradiation region 304, where the droplets can interact with light pulses from the laser system 302 to produce plasma and generate an EUV emission.
  • the EUV emission is used to expose a substrate such as a resist-coated wafer at exposure device 256. More details regarding various droplet dispenser configurations can be found in, e g., U.S. Pat. No. 7,872,245, issued on January 18, 2011, titled “Systems and Methods for Target Material Delivery in a Laser Produced Plasma EUV Light Source”, U.S. Pat. No.
  • the source material for producing an EUV light output for substrate exposure can include, but is not necessarily limited to, a material that includes tin, lithium, xenon or combinations thereof.
  • the source material can be in the form of liquid droplets and/or solid particles contained within liquid droplets.
  • the element tin can be used as pure tin, as a tin compound, e.g., SnB , SnBr2, SnEh, as a tin alloy, e.g., tin-gallium alloys, tin-indium alloys, tin-indium-gallium alloys, or a combination thereof.
  • the source material when sent to irradiation region 304, can be at various temperatures, for example, room temperature or near room temperature (e.g., tin alloys, SnBr4), at an elevated temperature (e.g., pure tin), or at temperatures below room temperature (e.g., SnEE).
  • room temperature or near room temperature e.g., tin alloys, SnBr4
  • an elevated temperature e.g., pure tin
  • SnEE room temperature
  • the source SO can also comprise a controller 310 and/or a drive laser control system 312 for controlling devices in laser system 302 to generate light pulses for delivery into the chamber 212 and/or for controlling movement of optics in beam conditioning unit 306.
  • Source SO can also comprise a droplet position detection system which can comprise one or more droplet imagers 314 that provide an output signal indicative of the position of one or more droplets (e.g., to ensure that droplets arrive on target at irradiation region 304).
  • the droplet imager(s) 314 can provide measurement output to a droplet position detection feedback system 316.
  • source material delivery system 308 can comprise a control system operable in response to a signal from controller 310 (which in some implementations can include the droplet error described above, or some quantity derived therefrom) to modify the release point, initial droplet stream direction, droplet release timing and/or droplet modulation to correct for errors in the droplets arriving at irradiation region 304.
  • controller 310 which in some implementations can include the droplet error described above, or some quantity derived therefrom
  • the lithographic apparatus 100 can also comprise a collector 258 and a gas dispenser device 320.
  • Gas dispenser device 320 can dispense gas in the path of the source material from source material delivery system 308 (e.g., irradiation region 304).
  • Gas dispenser device 320 can comprise a nozzle through which dispensed gas can exit.
  • Gas dispenser device 320 can be structured (e.g., having an aperture) such that, when placed near the optical path of laser system 302, light from laser system 302 is not blocked by gas dispenser device 320 and is allowed to reach irradiation region 304.
  • a buffer gas such as hydrogen, helium, argon or combinations thereof, can be introduced into chamber 212.
  • the buffer gas can be present in the chamber 212 during plasma discharge and can act to slow plasma-created ions, reduce degradation of optics, and/or increase plasma efficiency.
  • a magnetic field and/or electric field (not shown) can be used alone, or in combination with a buffer gas, to reduce damage caused by fast-moving ions.
  • collector 258 can be a near-normal incidence collector mirror having a reflective surface in the form of a prolate spheroid as described above.
  • Collector 258 can be formed with an aperture to allow the light pulses generated by laser system 302 to pass through and reach irradiation region 304. The same, or another aperture, can be used to allow gas from the gas dispenser device 320 to flow into chamber 212.
  • the collector 258 can be, e.g., a prolate spheroid mirror that has a first focus within or near the irradiation region 304 and a second focus at an intermediate region 318, where the EUV light can be transmitted to exposure device 256.
  • collectors other than collector 258 (e.g., collector CO (FIG. 2A)).
  • FIG. 4 shows a lithographic cell 400, also sometimes referred to a lithocell or cluster, according to some aspects.
  • Lithographic apparatus 100 (FIGS. 1, 2A, 2B, and 3) can form part of lithographic cell 400.
  • Lithographic cell 400 can also comprise one or more apparatuses to perform pre-exposure and post-exposure processes on a substrate. These can include spin coaters SC to deposit resist layers, developers DE to develop exposed resist, chill plates CH, and bake plates BK.
  • a substrate handler, or robot, RO picks up substrates from mput/output ports I/Ol, I/O2, moves them between the different process apparatuses and delivers them to the loading bay LB of the lithographic apparatus 100.
  • FIG. 5 shows a source material delivery system 500, according to some aspects.
  • source material delivery system 500 can be used in a lithographic apparatus or an inspection apparatus.
  • Source material delivery system 500 comprises a nozzle 502, an electromechanical element 504, and a waveform generator 506.
  • Nozzle 502 comprises a capillary 508.
  • Source material delivery system 500 further comprises a shroud 510, a controller 512, a first detector 514, and/or a second detector 516.
  • Controller 512 comprises a processor.
  • terms such as “electromechanical,” “electro-actuated,” or the like can be used herein to refer to a material or structure which undergoes a dimensional change (e.g., movement, deflection, contraction, rotation, and the like) when subjected to a voltage, electric field, magnetic field, or combinations thereof.
  • Some examples can include piezoelectric materials, electrostrictive materials, and magnetostrictive materials. Apparatuses and methods for using an electro -actuated element to control a droplet stream are disclosed, for example, in U.S . Patent No.
  • electromechanical element 504 is disposed on (e.g., surrounding) nozzle 502. It should be appreciated that interactions between nozzle 502 and electromechanical element 504 described herein is directed to interactions between a pressure-sensitive element of nozzle 502 and electromechanical element 504 (e.g., electromechanical element 504 is disposed on capillary 508).
  • Waveform generator 506 is electrically coupled to electromechanical element 504. Controller 512 is electrically coupled to waveform generator 506.
  • an EUV -generating-plasma is generated by irradiating target material (e.g., Sn) with a laser, which ionizes some or all of the target material (i.e., excitation).
  • the target material is provided as a stream of coalesced droplets that intersects the laser path.
  • Microscopic interactions between a coalesced target material droplet and the laser can affect efficiency and stability of EUV radiation, which in turn can impact lithographic processes that depend on the EUV radiation. Therefore, it is desirable to control the interaction between coalesced droplet and the laser such that EUV- generation is stable and efficient.
  • One method to improve stability and efficiency is to ensure repeatable coalescence of target material droplets so that each coalesced droplet produces a repeatable interaction with the laser. Structures and functions in aspects of the present disclosure allow for repeatable coalescence of target material droplets.
  • nozzle 502 ejects initial droplets of target material, shown in FIG. 5 as a stream of target material 518.
  • Electromechanical element 504 transduces electrical energy from the waveform generator 506 to apply a pressure on nozzle 502 (e.g., on capillary 508). This introduces a velocity perturbation in stream of target material 518 exiting nozzle 502. Stream of target material 518 ultimately coalesces into droplets which are detected by first detector 514 and/or second detector 516 to generate a signal (e.g., a detection signal).
  • waveform generator 506 is configured to generate an electrical signal to control the applied pressure on nozzle 502.
  • the electrical signal can comprise a superposition (e.g., hybrid waveform) of a first periodic waveform having a first frequency (e.g., a low frequency sine wave) and a second periodic waveform having a second frequency different from the first frequency (e.g., a high frequency square wave).
  • first frequency e.g., a low frequency sine wave
  • second periodic waveform having a second frequency different from the first frequency
  • the term “sine” is used herein to refer to sinusoidal patterns.
  • the second frequency can be an integer multiple of the first frequency.
  • a gas flow assembly can dispense gas into a radiation generation chamber.
  • the gas flow assembly can direct gas flow “perpendicular” to a collector in a radiation chamber.
  • a “perpendicular” gas flow may not be exactly perpendicular to a collector surface. Instead a “perpendicular” gas flow can refer to a gas flow that directs gas flow away from a collector and towards a plasma generation region.
  • a “perpendicular” gas flow can additionally flow towards an exhaust.
  • gas can be directed “parallel” and “perpendicular” to a collector surface simultaneously. In some aspects, gas can be dispensed in directions other than the “parallel” and “perpendicular” directions described above.
  • FIG. 6B shows a gas flow 606 during a transition between and hit mode and miss mode, according to some aspects.
  • gas flows in a chamber can undergo a transient reorganization process. Similar to gas flow 602, gas flow 606 can be dispensed from gas flow assembly 620 and carry residual debris generated during plasma generation towards exhaust 604. However, the sudden absence of plasma during the hit-miss transition causes a transient flow reordering process, resulting in overshoot 608. For example, a portion of gas flow 606 misses exhaust 604 and forms overshoot 608. Overshoot 608 can carry debris towards a wall of a chamber 612 and/or towards an intermediate focus (e.g., INTF).
  • gas flows 602 and 606 illustrate “perpendicular” gas flows.
  • Gas flows in a radiation generation chamber can be configured to quickly switch between a first gas flow configuration during an hit mode and a second gas flow configuration during an miss mode. Altering gas flow paths during hit-miss and miss-hit transitions reduce the effects of transient reordering of gas flows, such as deposition on chamber walls and/or collection optics.
  • one or more components in the system can be configured to alter the gas flow dispensed into a chamber when the system transitions between the first gas flow configuration and the second gas flow configuration.
  • FIGS. 7A and 7B show a cross section of gas dispenser device 700, according to some aspects.
  • Gas dispenser device 700 and collector 758 can be cylindrically symmetric.
  • Gas dispenser device 700 comprises a first gas flow conduit 702 and a second gas flow conduit 704.
  • First gas flow conduit 702 can represent multiple conduits arranged around second gas flow conduit 704.
  • first gas flow conduit 702 comprises a surface 706.
  • Surface 706 can comprise adjustable member 708.
  • second gas flow conduit 704 comprises a surface 710.
  • Surface 710 can comprise fixed gap 712.
  • fixed gap 712 is a continuous opening that separates an upper part of second gas flow conduit 704 from a lower part of second gas flow conduit 704.
  • fixed gap 712 represents multiple discrete openings surrounding a sidewall of second gas flow conduit 704.
  • first gas flow conduit 702 is configured to direct gas flow “parallel” to a collector surface, as illustrated by flow lines 716.
  • second gas flow conduit 704 is configured to direct gas flow “perpendicular” to a collector surface, as illustrated by flow lines 714.
  • First gas flow conduit 702 and second gas flow conduit 704 can be concentric.
  • Adjustable member 708 can be configured to move perpendicular to the collector surface to create an opening 718 in first gas flow conduit 702.
  • FIG. 7A shows a configuration of gas dispenser device 700 during a hit mode, according to some aspects.
  • Adjustable member 708 can be positioned to block gas from flowing from second gas flow conduit 704 to first gas flow conduit 702.
  • FIG. 7B shows a configuration of gas dispenser device 700 during a miss mode, according to some aspects.
  • adjustable member 708 is positioned to allow gas from second gas flow conduit 704 to flow into first gas flow conduit 702 through opening 718.
  • the amount of gas flowing out of gas flow conduit 704 is decreased, and the amount of gas flowing out of gas flow conduit 702 is increased.
  • FIGS. 8 A and 8B show a cross section of gas dispenser device 800, according to some aspects.
  • Gas dispenser device 800 and collector 858 can be cylindrically symmetric.
  • Gas dispenser device 800 further comprises a first gas flow conduit 802 and a second gas flow conduit 804.
  • First gas flow conduit 802 can represent multiple conduits arranged around second gas flow conduit 804.
  • First gas flow conduit 802 comprises an inner surface 806.
  • inner surface 806 comprises a first gap 808.
  • First gap 808 can have a fixed dimension.
  • First gas flow conduit 802 can be configured to provide gas flow “parallel” to a collector surface.
  • Second gas flow conduit 804 comprises a sidewall 810.
  • Sidewall 810 comprises one or more second gaps 812.
  • second gap 812 is a continuous opening that separates an upper part of second gas flow conduit 804 from a lower part of second gas flow conduit 804.
  • second gap 812 represents multiple discrete openings surrounding sidewall 810.
  • second gap 812 can have a fixed dimension.
  • Second gas flow conduit 804 can be configured to provide gas flow “perpendicular” to a collector surface. First gas flow conduit 802 and second gas flow conduit 804 can be concentric. Inner surface 806 and sidewall 810 can be in contact.
  • FIG. 8B shows gas dispenser device 800 during a miss mode, according to some aspects.
  • second gas flow conduit 804 is retracted with respect to collector 858.
  • first gap 808 and second gap 812 can align.
  • gas can flow from second gas flow conduit 804 into first gas flow conduit 802 through second gap 812 and first gap 808.
  • gas flowing out of second gas flow conduit 804 is reduced and gas flowing out of first gas flow conduit 804 is increased.
  • retracted second gas flow conduit 804 increases a distance from an irradiation region and thereby increases more space for a second flow 814.
  • second gas flow conduit 804 is fixed, and first gas flow conduit 802 moves vertically to align and misalign first gap 808 and second gap 812.
  • FIGS. 8C and 8D show gas dispenser device 800’ during a miss mode and a hit mode, according to some aspects.
  • first gas flow conduit 802’ is fixed and second gas flow conduit 804’ is tumable.
  • first gap 808’ and second gap 812’ are vertically arranged at a same level, but the alignment and misalignment of first gap 808’ and second gap 812’ are performed by rotating first gas flow conduit 802’.
  • second gap 812’ represents multiple discrete openings arranged around sidewall 810’.
  • FIG. 9 shows a method 900 of altering a gas flow path in a light source, according to some aspects.
  • Method 900 can comprise steps 902 and 904.
  • step 902 comprises adjusting one or more elements of a first gas flow conduit or a second gas flow conduit to allow gas to flow from the second gas flow conduit to the first gas flow conduit.
  • an adjustable member of the first gas flow conduit is adjusted to create a gap in the first gas flow conduit that aligns with a gap in the second gas flow conduit, as shown in FIGS. 7A and 7B.
  • a second gas flow conduit can be retracted to align a gap in the second gas flow conduit with a gap in the first gas flow conduit, as shown in FIGS. 8A and 8B.
  • a second gas flow conduit can be rotated to align a gap in the second gas flow conduit with a gap in the first gas flow conduit, as shown in FIGS. 8C and 8D.
  • step 904 comprises adjusting one or more elements of the first gas flow conduit or the second gas flow conduit to block gas from flowing from the second gas flow conduit to the first gas flow conduit.
  • an adjustable member of the first gas flow conduit is adjusted to close a gap in the first gas flow conduit, as shown in FIGS. 7A and 7B.
  • a second gas flow conduit is adjusted so that a gap in the second gas flow conduit does not align with a gap in the first gas flow conduit, as shown in FIGS. 8 A and 8B.
  • a second gas flow conduit can be rotated to misalign a gap in the second gas flow conduit with a gap in the first gas flow conduit, as shown in FIGS. 8C and 8D.
  • the method steps of FIG. 9 can be performed in any conceivable order and it is not required that all steps be performed. Moreover, the method steps of FIG. 9 described above merely reflect an example of steps and are not limiting. That is, further method steps and functions are envisaged based aspects described in reference to FIGS. 1-8, and 10.
  • pressure gradients between weakly linked components (e.g., tin catch) in a radiation generation chamber can generate high speed gas flows due to pressure changes that occur during hit-miss and miss-hit transitions. Pressure changes can be due to dynamics of gas in the chamber during plasma generation.
  • gas can increase in temperature and flow from the plasma generation region towards the weakly linked components. As the gas flows towards the weakly linked components, the pressure in the components can increase relative to the pressure in the chamber.
  • a miss mode plasma generation ceases, and gas no longer flows towards the components.
  • a high velocity (up to 180 m/s) stream of gas can flow from the weakly linked components towards the chamber during a hit-miss droplet transition due to a pressure difference between the weakly linked components and the inner liner of the chamber.
  • an inner liner of a chamber and a source material catch i.e., reservoir positioned along the same axis as source material delivery system and configured to catch source material droplets not used to generate plasma
  • gas flows into the source material catch and increases the localized pressure .
  • a pressure gradient causes gas to flow into the inner region of chamber from the source material catch, thereby altering the gas flow path of gas in the chamber.
  • a weakly linked reservoir is intentionally positioned in a radiation generation chamber to alter gas flow in a chamber during an on-off and/or off-on droplet transition.
  • FIG. 10 shows a gas flow in a chamber containing a linked reservoir, according to some aspects.
  • the gas flow configuration shown in FIG. 10 represents a portion of the total gas flow and is not representative of the total gas flow in a chamber 1012.
  • FIG. 10 shows a gas flow configuration during a transition from a hit mode state to miss mode state.
  • Gas dispenser device 1020 can dispense gas flow 1002 “perpendicular” to collector 10 8.
  • Reservoir 1004 is linked to chamber 1012.
  • gas flows into reservoir 1004 and increases the pressure in reservoir 1004 during the hit mode state.
  • a pressure gradient is formed between reservoir 1004 and chamber 1012 (e.g. pressure is higher in reservoir 1004 during a hit mode state).
  • gas flow 1006 can flow from reservoir 1004 to chamber 1012 due to the pressure gradient that formed between reservoir 1004 and chamber 1012 during the hit mode state.
  • gas flow 1004 can deform gas flow 1002.
  • Gas flow 1006 directs gas flow 1002 towards exhaust 1008.
  • reservoir 1004 can alternatively be configured to provide gas flow 1006 to chamber 1012 during a transition from a miss mode state to a hit mode state.
  • gas flow 1006 can exit reservoir 1004 less than 5 milliseconds after a hit-miss mode or miss-hit mode transition. In some aspects, gas flow 1006 can alter the path of gas flow 1002 less than 10 milliseconds after a hit-miss or miss-hit mode transition. In some aspects, gas flow 1006 can alter the path of gas flow 1002 less than 5 milliseconds after a hit-miss or miss-hit transition.
  • UV radiation for example, having a wavelength X of 365, 248, 193, 157 or 126 nm
  • extreme ultraviolet (EUV or soft X-ray) radiation for example, having a wavelength in the range of 5-100 nm such as, for example, 13.5 nm
  • hard X-ray working at less than 5 nm as well as particle beams, such as ion beams or electron beams.
  • UV refers to radiation with wavelengths of approximately 100-400 nm
  • Vacuum UV, or VUV refers to radiation having a wavelength of approximately 100-200 nm.
  • lithographic apparatuses described herein can be used in other applications, for example, in the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat-panel displays, LCDs, thin-film magnetic heads, etc.
  • any use of the terms “wafer” or “die” herein can be considered as specific examples of the more general terms “substrate” or “target portion”, respectively.
  • a substrate can be processed before or after exposure in, for example, a track unit (a tool that typically applies a layer of resist to a substrate and develops the exposed resist) and/or a metrology unit. Where applicable, aspects disclosed herein can be applied to such and other substrate processing tools. Furthermore, a substrate can be processed more than once, for example in order to create a multi-layer IC, so that the term substrate used herein can also refer to a substrate that already contains multiple processed layers.

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Abstract

Un système ultraviolet extrême (EUV) comprend une cuve pour générer un rayonnement, un miroir, un ensemble d'écoulement gazeux et un échappement. Le système fournit un premier trajet d'écoulement gazeux dans la cuve lorsque le système génère un rayonnement EUV. Le système fournit un second trajet d'écoulement gazeux dans la cuve lorsque le système ne génère pas de rayonnement EUV. Le système peut assurer une commutation entre le premier trajet d'écoulement gazeux et le second trajet d'écoulement gazeux en quelques millisecondes.
PCT/EP2024/085365 2024-01-16 2024-12-09 Réattribution d'écoulement gazeux dans une source de lumière Pending WO2025153240A1 (fr)

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