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WO2025149309A1 - Dispositif optoélectronique de détection de gaz - Google Patents

Dispositif optoélectronique de détection de gaz

Info

Publication number
WO2025149309A1
WO2025149309A1 PCT/EP2024/086570 EP2024086570W WO2025149309A1 WO 2025149309 A1 WO2025149309 A1 WO 2025149309A1 EP 2024086570 W EP2024086570 W EP 2024086570W WO 2025149309 A1 WO2025149309 A1 WO 2025149309A1
Authority
WO
WIPO (PCT)
Prior art keywords
measurement
region
optoelectronic device
radiation
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/EP2024/086570
Other languages
English (en)
Inventor
Thomas Schwarz
Michael Zitzlsperger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram AG
Original Assignee
Ams Osram AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ams Osram AG filed Critical Ams Osram AG
Publication of WO2025149309A1 publication Critical patent/WO2025149309A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
    • G01N21/77—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
    • G01N21/78—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator producing a change of colour
    • G01N21/783—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator producing a change of colour for analysing gases
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/02—Mechanical
    • G01N2201/022—Casings
    • G01N2201/0221—Portable; cableless; compact; hand-held

Definitions

  • An optoelectronic device for detecting a gas is speci fied .
  • An optoelectronic device for detecting a gas is speci fied .
  • the optoelectronic device is configured for detecting the presence of a gas by using electromagnetic radiation .
  • a change of an intensity, a wavelength, a frequency and/or a polari zation of the electromagnetic radiation is detectable in the presence of the gas .
  • a level of the change depends on an amount of the gas present .
  • the optoelectronic device for detecting a gas is configured for detecting a gas in a concentration of between and including 0 . 01 % and 4 % .
  • the optoelectronic device is a gas sensor .
  • the gas is hydrogen (H 2 ) or ammonia (NH 3 ) or a harmful gas such as SO X or NO X .
  • the optoelectronic device comprises a radiation-emitting element configured for emitting an electromagnetic radiation .
  • the radiation-emitting element is a radiation-emitting diode such as a light-emitting diode ( LED) .
  • the radiation-emitting element can be a surface emitting laser such as a vertical cavity surface emitting laser (VCSEL ) or an edge emitting laser .
  • VCSEL vertical cavity surface emitting laser
  • the terms light and electromagnetic radiation are used interchangeable .
  • the electromagnetic radiation comprises a wavelength or a wavelength range of the ultraviolet (UV) wavelength range , the visible (VIS ) wavelength range and/or the infrared (IR) wavelength range .
  • the electromagnetic radiation is radiation in the infrared wavelength range .
  • the electromagnetic radiation comprises a wavelength or a wavelength range between and including 1100 nm and 1500 nm, for example between and including 1200 nm and 1400 nm or between and including 1250 nm and 1350 nm, for instance between and including 1280 nm and 1300 nm .
  • the electromagnetic radiation can comprise a wavelength or a wavelength range between and including 800 nm and 900 nm .
  • the optoelectronic device comprises a measurement unit comprising a measurement region and a reference region .
  • the measurement unit is configured for detecting the gas .
  • the measurement region of the measurement unit is configured for interacting with the gas , for instance binding the gas to the measurement region .
  • the reference region is configured for not interacting with the gas .
  • the optoelectronic device comprises a detector unit comprising at least a first photodetector region and a second photodetector region .
  • each photodetector region is configured for detecting an electromagnetic radiation incident on the respective photodetector region .
  • each photodetector region is configured for detecting an intensity, a wavelength, a frequency, and/or a polari zation of the incident electromagnetic radiation .
  • the first photodetector region and the second photodetector region are operable independently of one another .
  • the first photodetector region comprises or consists of a first photodiode and the second photodetector region comprises or consists of a second photodiode .
  • the first photodetector region can be a first part of a two- part photodiode and the second photodetector region can be a second part of the two-part photodiode .
  • the photodetector unit can comprise a plurality of photodetector regions .
  • the photodetector unit can comprise a plurality of first photodetector regions and a plurality of second photodetector regions .
  • the measurement region is arranged in a first beam path of the electromagnetic radiation between the radiation-emitting element and the first photodetector region .
  • the first beam path is a path of at least a part of the electromagnetic radiation starting from the radiation-emitting element and ending at the first photodetector region .
  • the first photodetector region is configured for detecting a measurement signal .
  • the reference region is arranged in a second beam path of the electromagnetic radiation between the radiation-emitting element and the second photodetector region .
  • the second beam path is a path of at least a part of the electromagnetic radiation starting from the radiation-emitting element and ending at the second photodetector region .
  • the second photodetector region is configured for detecting a reference signal .
  • the first beam path and the second beam path are independent of one another .
  • the first beam path and the second beam path are separate beam paths .
  • the first beam path and the second beam path can be parallel to one another .
  • the first beam path and the second beam path do not overlap .
  • the first beam path and the second beam path are reflective .
  • electromagnetic radiation is used that is reflected as it passes along the first beam path or the second beam path, respectively .
  • the electromagnetic radiation is reflected in the measurement unit , in particular in the measurement region or the reference region, respectively .
  • at least 80 % , in particular at least 90 % , of the electromagnetic radiation entering the measurement unit is reflected inside the measurement unit .
  • the second beam path is configured in such a way that the electromagnetic radiation enters the reference region from a side facing the radiation-emitting element , is at least partially reflected inside the reference region, and exits the reference region on the side facing the radiationemitting element .
  • the measurement of the reference signal is performed in reflection .
  • the reflection of the electromagnetic radiation is specular or di f fuse .
  • a specular reflection can be achieved by a smooth or smoothed surface .
  • a di f fuse reflection can be achieved by a rough or roughened surface .
  • the smooth or smoothed surface or the rough or roughened surface can be a part of the measurement unit , in particular of the measurement region or the reference region, respectively .
  • the optoelectronic device is surface mountable .
  • a surface mountable optoelectronic device is , in particular, directly mountable onto the surface of a printed circuit board ( PCB ) .
  • the optoelectronic device is referred to as a surface-mount device ( SMD) .
  • mountable or mounted components or devices are attachable or attached to an underlying surface such as a substrate , a housing, or a printed circuit board .
  • the components or devices can be attached by a connection mean such as a soldered contact or an adhesive layer .
  • the optoelectronic device for detecting a gas is designed as a surface mountable package .
  • the optoelectronic device is a gas sensor designed as a surface mountable package .
  • a SMT-substrate can advantageously be provided cost-ef f iciently .
  • An optoelectronic device comprising a SMT- substrate is advantageously easy to install , in particular easy to integrate into a control system such as a control system of a heating system .
  • electrical connection pads of the optoelectronic device are exclusively arranged on the side of the substrate facing away from the radiationemitting element , the measurement unit , and the detector unit .
  • all electrical connection pads of the optoelectronic device are arranged on one side of the substrate , wherein the components of the optoelectronic device such as the radiation-emitting element , the measurement unit , and the detector unit are arranged on the opposite side of the substrate .
  • a substrate having electrical connection pads exclusively facing away from the components of the optoelectronic device can advantageously be surface mounted simply and ef ficiently .
  • the optoelectronic device comprises a housing .
  • the housing is configured for protecting the components of the optoelectronic device such as the radiation-emitting element , the measurement unit , and the detector unit against damage , in particular, by providing a protective barrier against external influences such as a deposition of dust on sensitive surfaces of the components .
  • the housing is impermeable to the electromagnetic radiation emitted by the radiation-emitting element .
  • the environment surrounding the optoelectronic device is protected against the electromagnetic radiation emitted by the radiation-emitting element .
  • the housing is formed by inj ection molding .
  • An inj ection molded housing is stable and can advantageously be provided cost-ef f iciently .
  • the housing comprises a gas inlet .
  • the gas inlet is configured for providing the gas within the volume .
  • the gas inlet is an opening in the housing through which the gas can flow into the volume .
  • the gas inlet can be arranged in or be a side of the housing opposite of the substrate . In this instance , a part of the side of the housing or the entire side of the housing can be free of a material of the housing .
  • a gas inlet is a simple way for providing the gas within the volume .
  • the gas inlet can be an opening in the housing through which the gas can come into contact with the measurement unit . In this instance , the volume can be free of the gas .
  • the foamed plastic layer comprises a plastic material having pores permeable for the gas .
  • the plastic material can be a thermoplastic resin such as polycyclohexylenedimethylene terephthalate ( PCT ) , polybutylene terephthalate ( PBT ) , or polyphthalamide ( PPA) or a thermosetting resin such as epoxy .
  • Thermoplastic resins and thermosetting resins can advantageously be stable at temperatures required for SMT-mounting of the optoelectronic device , for example for SMT-mounting with SnAgCu at 260 ° C .
  • the foamed plastic layer can be produced by foam inj ection molding thereby producing a foam structure comprising the pores .
  • the foam structure is present on all sides and intrinsically .
  • the pores can be incorporated in the plastic material by physical methods such as in introduction of gas cavities in liquid plastic or chemical methods such as a gas production at elevated temperatures by a chemical reaction .
  • sodium carbonate is used in the chemical methods .
  • the at least three layers of a perforated metal sheet are arranged on top of one another in such a way that openings of a layer partially overlap with openings of directly adj acent layers in such a way that there is no overlap of openings of three directly adj acent layers .
  • openings of a first layer overlap with openings of a second layer and openings of the second layer overlap with openings of a third layer, but openings of the second layer do not overlap with openings of the first layer and the third layer at the same time .
  • gas can permeate the covering, whereas electromagnetic radiation cannot permeate the covering .
  • the covering can comprise more than three layers of a perforated metal sheet such as four layers or five layers .
  • the at least three layers of the perforated metal sheet are bonded to one another by means of adhering, soldering, or sintering .
  • an adhesive , a solder material , or a sintering material are applied on the perforated metal sheets that are subsequently used to bond the layers together, for example by means of an elevated temperature .
  • tinned metal sheets can be used and a further adhesive , solder material or sintering material can be dispensed with .
  • the perforated metal sheets can be bonded by means of welding, in particular spot welding, for example laser spot welding or electrode spot welding . In this instance , the layer can be spot welded at every tenth location at which all layers are present .
  • the detector unit comprises an integrated circuit .
  • the integrated circuit is configured for controlling the optoelectronic device , in particular the radiation-emitting element , for signal processing of the measurement signal and the reference signal , and for outputting a measurement result .
  • Signal processing can include an analysis of the measurement signal and the reference signal and a determination of the measurement result .
  • the integrated circuit is a monolithic integrated circuit .
  • the integrated circuit is an application-speci fic integrated circuit (AS IC ) .
  • AS IC application-speci fic integrated circuit
  • the first photodetector region and the second photodetector region are both arranged on a surface of the integrated circuit .
  • An integrated circuit can advantageously combine the optical measurement and the signal processing in one compact optoelectronic device .
  • Using a cost-ef ficient and standardi zed integrated circuit advantageously facilitates the integration of the optoelectronic device in a control system of , for example , a heating system .
  • the first photodetector region and the second photodetector region are arranged separately from the integrated circuit .
  • the detector unit is formed of two parts , wherein a first part comprises the first photodetector region and the second photodetector region and a second part comprises the integrated circuit .
  • the detector unit is formed of three parts , wherein a first part comprises the first photodetector region, a second part comprises the second photodetector region, and a third part comprises the integrated circuit .
  • the measurement region and/or the reference region comprises a transparent plate , a measurement stack, and a protective layer .
  • the measurement stack is arranged between the transparent plate and the protective layer .
  • the transparent plate , the measurement stack, and the protective layer are arranged in such a way that the transparent plate and the protective layer are in direct mechanical contact in a region laterally surrounding the measurement stack .
  • the measurement stack is surrounded by the transparent plate and the protective layer from all sides .
  • the transparent plate is transparent for the electromagnetic radiation emitted by the radiation-emitting element .
  • the transparent plate is impermeable for the gas .
  • the transparent plate is a glass plate .
  • metal hydrides can absorb a part of the electromagnetic radiation of the first beam path thereby, for example , changing the intensity of the measurement signal .
  • the formation of metal hydrides changes a transparency of the measurement region depending on the amount of hydrogen gas present in the optoelectronic device .
  • the measurement stack comprises at least one measurement layer .
  • the measurement stack comprises one measurement layer, two measurement layers or more than two measurement layers .
  • measurement layers are layers of the measurement stack, in particular metal layers or metal alloy layers , without protective layers . It is possible that not all materials suitable for the measurement stack adhere equally well to one another and/or to the transparent plate and/or the protective layer .
  • an adhesion of the components and layers of the measurement unit can advantageously be enhanced and tailored to speci fic applications .
  • the measurement stack comprises at least a first measurement layer and a second measurement layer arranged between the first measurement layer and the protective layer .
  • the first measurement layer and the second measurement layer comprise or consist of a metal or a metal alloy .
  • the metal alloy is a tantalum palladium alloy such as Tao . gPdo . i or a palladium gold copper alloy such as Pdo. eAuo. ssCuo. os •
  • a measurement stack comprising a first measurement layer of a tantalum palladium alloy such as Tao . gPdo . i and a second measurement layer of a palladium gold copper alloy such as Pdo. eAuo.35Cuo. o5 is advantageously suited for detecting hydrogen gas .
  • the protective layer is configured for protecting the measurement stack against damage .
  • the protective layer is permeable for the gas , in particular for hydrogen .
  • the measurement region comes into contact to the gas .
  • the gas can pass through the protective layer to reach the measurement stack in the measurement region .
  • the gas can interact with the measurement stack and create a measurement signal at the first photodetector region .
  • the protective layer comprises or consists of polytetrafluoroethylene ( PTFE ) .
  • PTFE can advantageously provide an improved gas selectivity for hydrogen gas .
  • the gas-impermeable layer is configured in such a way that the gas passes through the gas-impermeable layer signi ficantly slower than through the protective layer .
  • the gas-impermeable layer may not be completely impermeable for the gas .
  • a gas transport through the gas-impermeable layer is very slow compared to any layers described herein as gas-permeable .
  • the transparent plate , the measurement stack, and the gas- impermeable layer are arranged in such a way that the transparent plate and the gas-impermeable layer are in direct mechanical contact in a region laterally surrounding the measurement stack .
  • the measurement stack is surrounded by the transparent plate and the gas-impermeable layer from all sides .
  • the reference region comes into contact to the gas .
  • the gas cannot pass through the gas-impermeable layer and through the transparent plate at a first contact of the gas to the reference region .
  • the gas cannot reach the measurement stack in the reference region at the same time that the gas reaches the measurement stack in the measurement region .
  • the measurement signal is di f ferent from the reference signal and the optoelectronic device determines a measurement result that indicates the presence of the gas .
  • a reference region with a gas impermeable layer advantageously allows to perform reference measurements and thus increase the signal-to-noise ratio .
  • the reference region only di f fers from the measurement region in the presence of the gas-impermeable layer .
  • the electromagnetic radiation passes through a similar layer stack along the first beam path and along the second beam path . This advantageously ensures a more accurate measurement result .
  • the measurement region and/or the reference region further comprises a cover layer .
  • the cover layer is arranged on a side of the protective layer facing away from the measurement stack .
  • the cover layer is impermeable for electromagnetic radiation emitted by the radiation-emitting element and for electromagnetic radiation having a di f ferent wavelength or wavelength range .
  • the cover layer is not transparent for electromagnetic radiation in the UV wavelength range and/or visible wavelength range and/or IR wavelength range .
  • the cover layer comprises or consists of a black thin plastic layer .
  • the black thin plastic layer can have a thickness of at least 1 pm and at most 10 pm .
  • the thin black plastic layer comprises black sooty particles dispersed in an epoxy layer or a silicone layer .
  • the cover layer comprises or consists of porous silicon .
  • the cover layer can be a platelet of a material of the covering described above . The platelet can be bonded to the protective layer by means of an adhesive .
  • a cover layer can advantageously be used as an alternative for a radiation-impermeable housing or as an alternative for a covering for the gas inlet .
  • the measurement region and/or the reference region are arranged in the gas inlet of the housing, and the cover layer forms the covering .
  • the measurement region and/or the reference region are mounted on inside surfaces of the housing, for example via the transparent plate .
  • the transparent plate faces the radiation-emitting element and the detector unit .
  • the cover layer forms an outside surface of the housing .
  • the measurement region and the reference region are arranged on di f ferent sides of the radiation-emitting element .
  • the radiation-emitting element is arranged between the measurement region and the reference region .
  • the measurement region and the reference region are arranged directly adj acent to one another on the same transparent plate in such a way that the measurement region is above one side of the radiation-emitting element and the reference region is above the other side .
  • first photodetector region and the second photodetector region are also arranged on di f ferent sides of the radiation-emitting element such that electromagnetic radiation of the first beam path that is reflected inside the measurement region impinges on the first photodetector region and electromagnetic radiation of the second beam path that is reflected inside the reference region impinges on the second photodetector region .
  • the optoelectronic device further comprises a structure for optically separating the radiation-emitting element and the detector unit at least partially .
  • the structure is a blocking element configured for blocking a direct beam path of electromagnetic radiation between the radiation-emitting element and the detector unit .
  • the blocking element can be a radiation blocker implemented into the housing or a radiation blocker laterally surrounding the radiation-emitting element .
  • the blocking element can have a height perpendicular to the main extension direction of the radiation-emitting element or the detector unit of at most three times , in particular at most twice , a height of the radiation-emitting element .
  • a structure for optically separating the radiation-emitting element and the detector unit can advantageously ensure that no or no signi ficant amount of electromagnetic radiation from the radiationemitting element directly impinges on the detector unit .
  • the sensitivity of the optoelectronic device can be signi ficantly increased .
  • the detector unit is mounted on the substrate .
  • the first photodetector region and/or the second photodetector region are arranged in the detector unit on a side of the detector unit facing away from the substrate .
  • the integrated circuit of the detector unit is mounted on the substrate and the first photodetector region and the second photodetector region are arranged on a side of the integrated circuit facing away from the substrate .
  • the first photodetector region and the second photodetector region can be spaced apart , for example , on di f ferent sides of the radiation-emitting element .
  • the radiationemitting element is electrically contacted through the substrate and the detector unit , in particular through the substrate and the integrated circuit of the detector unit .
  • electrical contacts can advantageously be established easily through the substrate and the detector unit .
  • the optoelectronic device can advantageously be provided simply and cost-ef f iciently .
  • the signal-to-noise ratio can advantageously be further improved .
  • the measurement unit is spaced apart from the radiation-emitting element and the detector unit .
  • the measurement unit is mounted on inside surfaces of the housing close to or in the gas inlet .
  • the gas inlet is arranged on a side of the housing opposite the substrate and the radiation-emitting element and the detector unit are mounted on the substrate .
  • the detector unit is mounted on the substrate and the radiation-emitting element is mounted on the detector unit .
  • the measurement unit is arranged at the opposite side of the optoelectronic device with regard to the radiation-emitting element and the detector unit . This can advantageously ensure that the measurement unit is arranged in the first beam path and the second beam path .
  • the radiation-emitting element comprises or is a micro-LED . It is also possible that the radiation-emitting element comprises or is a mini-LED . As a broad definition, a micro-LED could be seen as any lightemitting diode ( LED) with a particularly small si ze . Micro- LEDs may comprise a width, a length, a thickness and/or a diameter smaller than or equal to 100 micrometers , in particular, smaller than or equal to 70 micrometers , for example smaller than or equal to 50 micrometers .
  • micro-LEDs for example rectangular micro-LEDs
  • a micro-LED is a light-emitting diode with a growth substrate removed, such that a thickness of the micro-LED is in the range between and including, for example , 1 . 5 micrometers and 10 micrometers .
  • the micro-LED is provided on a wafer having releasable retaining structures . The micro-LED can be detached from the wafer in a non-destructive manner .
  • Figures 1A, 4A, 5A and 6A each show a schematic sectional side view of an optoelectronic device for detecting a gas according to di f ferent exemplary embodiments ,
  • Figures IB, 4B, 5B and 6B each show a schematic top view of an optoelectronic device according to di f ferent exemplary embodiments .
  • Figure 2A shows a schematic top view of a measurement unit according to an exemplary embodiment
  • Figure 3A and 3B each show a schematic sectional side view of a covering according to di f ferent exemplary embodiments .
  • the optoelectronic device 1 of the exemplary embodiment shown in figures 1A and IB is configured for detecting a gas 9 , for example hydrogen (H 2 ) or ammonia (NH 3 ) or a harmful gas such as S0 x or N0 x .
  • a gas 9 for example hydrogen (H 2 ) or ammonia (NH 3 ) or a harmful gas such as S0 x or N0 x .
  • the gas 9 enters the volume 7 through the gas inlet 31 and comes into contact with the measurement unit 5 .
  • the gas 9 interacts with the measurement stack 54 in the measurement region 51 of the measurement unit 5 .
  • the gas 9 can bind to and/or chemically react with a material of the measurement stack 54 in the measurement region 51 .
  • a property of the electromagnetic radiation 10 of the first beam path that is reflected in the measurement region 51 is changed .
  • a measurement signal detected at the first photodetector region 61 is changed by the presence of the gas 9 in the volume 7 .
  • the gas 9 does not interact with the measurement stack 54 .
  • the reference region 52 of the exemplary embodiment shown in figure 2D further comprises a gas-impermeable layer 56 arranged between the measurement stack 54 and the protective layer 55 .
  • the gas-impermeable layer 56 is arranged on the measurement stack 54 in such a way that it has a direct contact to the transparent plate 53 in the region of the transparent plate 53 that is free of the measurement stack 54 .
  • the gas-impermeable layer 56 and the transparent plate 53 surround the measurement stack 54 from all sides and thus prevent that the gas 9 can reach the measurement stack 54 in the reference region 52 .
  • the gas- impermeable layer 56 comprises or consists of silicon dioxide ( SiO 2 ) .

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

L'invention concerne un dispositif optoélectronique de détection de gaz. Selon un mode de réalisation, le dispositif optoélectronique (1) de détection de gaz (9) comprend un élément d'émission de rayonnement (4) configuré pour émettre un rayonnement électromagnétique (10), une unité de mesure (5) comprenant une région de mesure (51) et une région de référence (52), et une unité de détection (6) comprenant au moins une première région de photodétecteur (61) et une seconde région de photodétecteur (62), la région de mesure (51) étant agencée dans un premier trajet de faisceau du rayonnement électromagnétique (10) entre l'élément d'émission de rayonnement (4) et la première région de photodétecteur (61), la région de référence (52) étant agencée dans un second trajet de faisceau du rayonnement électromagnétique (10) entre l'élément d'émission de rayonnement (4) et la seconde région de photodétecteur (62), le premier trajet de faisceau et le second trajet de faisceau étant réfléchissants, et le dispositif optoélectronique (1) pouvant être monté en surface. En particulier, l'élément d'émission de rayonnement (4) comprend une micro-DEL.
PCT/EP2024/086570 2024-01-12 2024-12-16 Dispositif optoélectronique de détection de gaz Pending WO2025149309A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102024100859 2024-01-12
DE102024100859.8 2024-01-12

Publications (1)

Publication Number Publication Date
WO2025149309A1 true WO2025149309A1 (fr) 2025-07-17

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4661320A (en) * 1983-08-12 1987-04-28 Hochiki Corporation Gas sensor
WO2001035057A2 (fr) * 1999-11-09 2001-05-17 Photonic Biosystems, Inc. Appareil de détection et de mesure d'ammoniac
EP1044363B1 (fr) * 1998-08-07 2004-10-20 Robert Bosch Gmbh Detecteur de gaz optoelectronique a base d'optodes
EP1923691A2 (fr) * 2006-11-16 2008-05-21 Tyco Electronics Raychem GmbH Agencement de capteur optique stable sur le long terme, en particulier un capteur d'hydrogène et agencement de capteur de gaz combiné
US20110064617A1 (en) * 2001-05-04 2011-03-17 Sensors For Medicine And Science, Inc. Electro-optical sensing device with reference channel
US10168211B1 (en) * 2015-11-25 2019-01-01 Maxim Integrated Products, Inc. Fully integrated gas concentration sensor
US20190242817A1 (en) * 2018-02-02 2019-08-08 Honeywell International Inc. Two detector gas detection system
EP3783341A1 (fr) * 2019-08-20 2021-02-24 FRAUNHOFER-GESELLSCHAFT zur Förderung der angewandten Forschung e.V. Détecteur de gaz et procédé de détection d'un gaz cible

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4661320A (en) * 1983-08-12 1987-04-28 Hochiki Corporation Gas sensor
EP1044363B1 (fr) * 1998-08-07 2004-10-20 Robert Bosch Gmbh Detecteur de gaz optoelectronique a base d'optodes
WO2001035057A2 (fr) * 1999-11-09 2001-05-17 Photonic Biosystems, Inc. Appareil de détection et de mesure d'ammoniac
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