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WO2025147470A1 - Refendage ou découpe facile d'un substrat flexible contenant un métal réactif ou un film d'alliage - Google Patents

Refendage ou découpe facile d'un substrat flexible contenant un métal réactif ou un film d'alliage Download PDF

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Publication number
WO2025147470A1
WO2025147470A1 PCT/US2024/062414 US2024062414W WO2025147470A1 WO 2025147470 A1 WO2025147470 A1 WO 2025147470A1 US 2024062414 W US2024062414 W US 2024062414W WO 2025147470 A1 WO2025147470 A1 WO 2025147470A1
Authority
WO
WIPO (PCT)
Prior art keywords
flexible support
support layer
laser
blade
layer stack
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/US2024/062414
Other languages
English (en)
Inventor
Subramanya P. Herle
Sehwan LIM
Jean Delmas
Visweswaren Sivaramakrishnan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of WO2025147470A1 publication Critical patent/WO2025147470A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23D—PLANING; SLOTTING; SHEARING; BROACHING; SAWING; FILING; SCRAPING; LIKE OPERATIONS FOR WORKING METAL BY REMOVING MATERIAL, NOT OTHERWISE PROVIDED FOR
    • B23D45/00—Sawing machines or sawing devices with circular saw blades or with friction saw discs
    • B23D45/003—Sawing machines or sawing devices with circular saw blades or with friction saw discs for particular purposes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0838—Devices involving movement of the workpiece in at least one axial direction by using an endless conveyor belt
    • B23K26/0846—Devices involving movement of the workpiece in at least one axial direction by using an endless conveyor belt for moving elongated workpieces longitudinally, e.g. wire or strip material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/04—Processes of manufacture in general
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
    • H01M4/139—Processes of manufacture
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/34—Coated articles, e.g. plated or painted; Surface treated articles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M2004/026—Electrodes composed of, or comprising, active material characterised by the polarity
    • H01M2004/027—Negative electrodes

Definitions

  • the present disclosure generally relates to systems and methods for cutting substrates including metals, for example, lithium metals, which can be used in energy storage devices.
  • Li-ion batteries and capacitors are used in a growing number of applications, including portable electronics, medical, transportation, grid-connected large energy storage, renewable energy storage, and uninterruptible power supply (UPS).
  • the charge/discharge time and capacity of energy storage devices are fundamental parameters.
  • the size, weight, and/or cost of such energy storage devices are also fundamental parameters.
  • low internal resistance is integral for high performance. The lower the resistance, the less restriction the energy storage device encounters in delivering electrical energy. For example, in the case of a battery, internal resistance affects performance by reducing the total amount of useful energy stored by the battery as well as the ability of the battery to deliver high current.
  • An effective roll-to-roll deposition process not only provides a high deposition rate, but also provides a film surface, which lacks small-scale roughness, contains minimal defects, and is flat, for example, lacks large scale topography.
  • an effective roll-to-roll deposition process also provides consistent deposition results or “repeatability.”
  • Thin film lithium energy storage devices typically employ a lithium deposition process where a thin film of lithium is deposited on or over a substrate or web before being laminated with an anode. Roll-to-roll processing often involves a certain roll width to be economical, even if the targeted roll width is smaller. The rolls coated with lithium may be cut to achieve the targeted roll width. [0005] Therefore, there is a need for improved apparatus and methods for cutting of substrate including lithium thin films for energy storage devices.
  • the present disclosure generally relates to systems and methods for cutting substrates including metals, for example, lithium metals, which can be used in energy storage devices.
  • FIG. 1A illustrates a schematic diagram of an exemplary system for cutting or slitting metals in accordance with one or more implementations of the present disclosure.
  • the cutting system 100 further includes at least one of the laser source 102 and an optical source assembly 106.
  • the laser source 102 is configured to generate a laser beam 130 and the optical source assembly 106 is configured to direct the laser beam 130 toward the back surface 140b of the flexible support layer stack 140, for example, the backside 212r of the flexible support layer 212.
  • the laser source 102 is an infrared laser source configured to operate at infrared (IR) wavelengths for removing sections of lithium on lithium coated substrates.
  • the laser source 102 may generate a pulsed laser beam 130.
  • frequency, pulse width, and pulse energy of the laser beam 130 generated by the laser source 102 are tunable (e.g., adjustable) depending on the material being removed, targeted lateral dimensions of the sections being removed, as well as a depth of the removal. Additionally, the movement speed of the laser beam 130, number of pulses, and beam profile and focused spot size may be tuned.
  • the laser beam 130 produced by the laser source 102 is projected (e.g., transmitted) towards the flexible support layer stack 140 via the optical source assembly 106.
  • the optical source assembly 106 is optically coupled with the laser source 102 and includes any suitable image projection devices for directing the laser beam 130 towards the flexible support layer stack 140 for laser activation.
  • the optical source assembly 106 includes a scanner 132, such as a single- or multi-axis large angle galvanometer optical scanner (i.e., galvanometer scanner).
  • galvanometer scanner refers to any device that responds to an electronic signal from the controller 110 to change a projection or reflection angle of the laser beam 130 to sweep the laser beam 130 across the flexible support layer stack 140.
  • Scanner 132 may also be a polygon scanner, an electrooptic scanner, an acousto-optic, or a combination thereof. Utilization of the scanner 132 enables activation of multiple sections of lithium on the flexible support layer stack 140 simultaneously via the laser lift-off process, in addition to scanning of the laser beam 130 across a surface of the flexible support layer stack 140 without mechanical translation of the flexible support layer stack 140 itself.
  • the scanner 132 may further include any suitable features to facilitate activation of the materials and structures described herein, such as digital servo feedback, low drift, fast dynamic response, and precise calibration capability.
  • the optical source assembly 106 further includes one or more scan lenses 134 having a large field of view that encompasses the entirety of the flexible support layer stack 140.
  • two or more scan lenses 134 may be utilized for laser removal of different types of materials, each scan lens of the scan lenses 134 specific to a wavelength range of the laser source 102.
  • the scan lenses 134 may be telecentric lenses, F-theta lenses, or a combination thereof.
  • the laser beam 130 projected by the optical source assembly 106 is directed towards the back surface 140b of the flexible support layer stack 140.
  • the cutting system 100 further includes the pickup roller 108 for removing lithium metal from the lithium film 214 that has been exposed to the laser beam 130 from the flexible support layer 212.
  • the pickup roller 108 is positioned to contact the lithium film 214 on the front surface 140f of the flexible support layer stack 140.
  • the pickup roller 108 may be positioned opposite the optical source assembly 106, which produces the laser beam 130.
  • the pickup roller 108 is shown as being aligned with the optical source assembly 106, the pickup roller 108 may be positioned downstream from the optical source assembly 106 and on the opposite side of the flexible support layer 212.
  • the pickup roller 108 can be or include any suitable material that can adhere to and remove lithium metal.
  • the material of pickup roller 108 can be selected from any suitable metallic or polymer material.
  • the pickup roller 108 can be or include stainless steel.
  • the cutting system further includes a scraping tool, for example, a doctor blade 170.
  • the doctor blade 170 is positioned to remove lithium metal film present on the pickup roller 108. As the pickup roller 108 removes activated lithium metal from the lithium film 214, the removed lithium metal film accumulates on the surface of the pickup roller 108. The doctor blade 170 removes the accumulated lithium metal film from the surface of the pickup roller 108 providing a clean surface form additional lithium metal to adhere to.
  • the cutting system 100 further includes a sacrificial film 113, for example, a plastic film, for removing lithium metal from the lithium film 214 that has been exposed to the laser beam 130 from the flexible support layer 212.
  • a sacrificial film 113 for example, a plastic film
  • the pickup roller 108 pushes the sacrificial film 113 against the activated lithium metal of the lithium film 214, and the activated lithium metal adheres to the sacrificial film 113 and is removed from the flexible support layer 212.
  • a sacrificial film 113 for example, a plastic film
  • the cutting system 100 further includes a sacrificial film supply roller 109 for supplying the sacrificial film 113 and a sacrificial film collection roller 111 for collecting the sacrificial film 113.
  • the sacrificial film 113 winds around the pickup roller 108 and the pickup roller 108 pushes the sacrificial film 113 against the activated lithium metal film, the activated lithium metal film adheres to the sacrificial film 113, and the sacrificial film 113 with the lithium metal adhered thereto is collected by the sacrificial film collection roller 111.
  • the activated lithium metal is contacted by the pickup roller 108 without the sacrificial film 113 and adheres directly to the pickup roller 108.
  • the cutting system 100 further includes the blade 118.
  • the blade 118 is positioned to cut or slit portions of the flexible support layer along a targeted path, for example, a portion of the flexible support layer 212 that has been exposed by removal of lithium metal from the lithium film 214.
  • the blade 118 is positioned downstream from the optical source assembly 106 and the pickup roller 108.
  • the blade 118 may be any blade suitable for cutting or slitting the flexible support layer 212.
  • the blade 118 may be a stationary blade, a rotary blade, a reciprocating blade, or other suitable mechanical cutting mechanism.
  • the blade 118 may be in the form of a die. The die can be configured to cut the flexible support layer 212 in a closed shape.
  • the blade 118 is positioned on a blade stage 116 or other support structure.
  • the blade stage 116 may be coupled to an optical bench 114.
  • the blade 118 may be positioned such that the flexible support layer stack 140 reaches the blade 118 after removal of the lithium metal from the lithium film 214 by the optical source assembly 106 and pickup roller 108.
  • the blade 118 can cut the flexible support layer 212 parallel to the travel direction shown by arrow 103 of the flexible support layer stack 140.
  • the blade 118 can cut the flexible support layer 212 across the width of the flexible support layer 212 for example, perpendicular to the travel direction shown by arrow 103 of the flexible support layer stack 140.
  • the blade 118 can move along the z-axis, the x-axis, and the y-axis.
  • FIG. 2 illustrates a top plan view of a flexible support layer stack, for example, the flexible support layer stack 140, being processed in a cutting system, for example, the cutting system 100 in accordance with one or more implementations of the present disclosure.
  • the flexible support layer stack 140 can be formed by any suitable deposition process.
  • the flexible support layer stack 140 includes the flexible support layer 212.
  • the flexible support layer stack 140 further includes the lithium film 214.
  • the lithium film 214 can be formed on the frontside 212f, the backside 212r, or both the frontside 212f and the backside 212r of the flexible support layer 212.
  • the lithium film 214 can have a thickness of equal to or less than 20 pm, or equal to or less than 8 pm, or equal to or less than 7 pm, or equal to or less than 6 pm, or equal to or less than 5 pm. In one example, the lithium film 214 has a thickness in a range from about 1 pm to about 20 pm.
  • Each lithium film 214 includes a lithium film and optionally additional films.
  • the lithium film 214 in FIG. 2 and FIGS. 3A-3C is shown as a single layer on the frontside 212f of the flexible support layer 212, it should be understood by those of ordinary skill in the art that the lithium film 214 can be a lithium film stack can including a greater number of layers, which can be provided over, under and/or between the flexible support layer 212 and the lithium film 214.
  • the flexible support layer stack 140 can also be a double-sided structure with the lithium film 214 formed on the frontside 212f of the flexible support layer 212 and a second lithium metal film stack (not shown) formed on the backside 212r of the flexible support layer 212.
  • the blade 118a-b cuts the flexible support layer 212 within the at least one blade cutting zone 216a-b.
  • the blade 118a-b cuts the flexible support layer 212 on a centerline of the blade cutting zone 216a-b.
  • the blade cutting produces two or more slit rolls 122a-c, such as a first slit roll 122a, a second slit roll 122b, and a third slit roll 122c.
  • FIG. 3A illustrates a cross-sectional side view of the flexible support layer stack 140 taken along line 3A-3A of FIG. 2 before laser activation, lithium removal, and blade cutting, in accordance with one or more implementations of the present disclosure.
  • the flexible support layer stack 140 includes the lithium film 214 formed on the frontside 212f of the flexible support layer 212. Although a single lithium film is shown in FIG 3A, additional lithium metal films are contemplated, for example, a second lithium metal film positioned on the backside 212r of the flexible support layer 212.
  • FIG. 3C illustrates a cross-sectional side view of the flexible support layer stack 140 taken along line 3C-3C of FIG. 2 after removal of the activated lithium metal from the flexible support layer stack 140 and prior to blade cutting.
  • a portion of each of the one or more lithium films 214 are removed by the pickup rollers 108-b from the frontside 212f of the flexible support layer 212, creating the blade cutting zones 216a-b in each of the one or more lithium films 214.
  • the blade cutting zone 216a separates a segment 214a from a segment 214b by a width “L” and the blade cutting zone 216b separates the segment 214b from a segment 214c by a width “L”.
  • FIG. 3D illustrates a cross-sectional view of the flexible support layer stack 140 taken along line 3D-3D of FIG. 2 after the blade cutting process.
  • the blades 118a-b slits the flexible support layer 212 into three substrate segments 212a-c that are rolled into a first slit roll 122a, a second slit roll 122b, and a third slit roll 122c.
  • a conductive substrate such as copper
  • it has a much lower absorption to IR laser than to green ( ⁇ 520 — 540 ns) or UV laser ( ⁇ 360 nanometer).
  • IR laser ⁇ 520 — 540 ns
  • UV laser ⁇ 360 nanometer.
  • a 1064 nanometer laser has less than 5% optical absorption in copper
  • a 532 nanometer Green laser has about 40% optical absorption in copper.
  • the 1064 nanometer laser in a melted copper liquid still has about 5% optical absorption.
  • the 1 pm IR laser wavelength is more advantageous than a Green or UV laser wavelength.
  • an IR laser is more reliable and cost-effective.
  • An IR nanosecond laser with a pulse duration of less than 30 nanoseconds and a near-infrared wavelength of 1064 nanometer is more suitable for this LLO process.
  • ultrashort pulsed lasers may be used for some purposes like quality improvement.
  • the laser with a longer pulse duration generates a higher density plasma resulting in a greater gas pressure to release the interface between PET and lithium.
  • pulse duration longer than 50 nanosecond involves much higher pulse energy (or laser power) due to a low peak power. On the contrary, a shorter pulse duration can process precisely so that it can achieve a cleaner lithium edge.
  • Laser parameters can be selected with benefits and advantages such as providing sufficiently high laser intensity to achieve removal of lithium and to minimize damage to the underlying substrate. Also, parameters can be selected to provide meaningful process throughput for industrial applications with precisely controlled ablation width (e.g., kerf width) and depth.
  • ablation width e.g., kerf width
  • an ultrashort pulse (USP) laser e.g., a laser with a pulse duration of, at most, in a femtosecond range
  • a femtosecond or picosecond pulse laser is suitable for providing such advantages.
  • Nanosecond-pulse laser lift-off is also suitable, as pulses longer than a few tens of picoseconds will start having more pronounced thermal effects. Nanosecond pulse lasers are also more cost-effective, although certain wavelengths may provide better performance than others.
  • a wavelength range of about 450 nm to about 1600 nm, or from about 450 nm to about 1550 nm will facilitate laser lift-off of lithium with nanosecond pulses such that the PET film is highly transparent to light.
  • a wavelength of less than 450 nm, or less than 355 nm, will result in scribing or cutting of the PET substrate.
  • a wavelength in a range from about 700 nm to about 1700 nm, or in a range from about 750 nm to about 1600 nm, will provide laser lift-off of lithium using nanosecond pulses.
  • a wavelength of less than 450 nm will scribe or cut the PI substrate.
  • the nanosecond pulses may range in a range from about 1 ns to about 200 ns, or in a range from about 1 ns to about 50 ns, or in a range from about 1 ns to about 10 ns.
  • a nanosecond-pulse laser process having a wavelength closer to or in the IR range provides a cleaner ablation process than a nanosecond-pulse laser process having a wavelength closer to or in the UV range.
  • a femtosecond-pulse laser process suitable for semiconductor wafer or substrate scribing is based on a laser having a wavelength of approximately greater than or equal to one micrometer.
  • pulses of approximately less than or equal to 15 nanoseconds of the laser having the wavelength of approximately greater than or equal to one micrometer are used.
  • dual laser wavelengths e.g., a combination of an IR laser and a UV laser
  • Implementations and all of the functional operations described in this specification can be implemented in digital electronic circuitry, or in computer software, firmware, or hardware, including the structural means disclosed in this specification and structural equivalents thereof, or in combinations of them. Implementations described herein can be implemented as one or more non-transitory computer program products, i.e. , one or more computer programs tangibly embodied in a machine readable storage device, for execution by, or to control the operation of, data processing apparatus, e.g., a programmable processor, a computer, or multiple processors or computers.
  • data processing apparatus e.g., a programmable processor, a computer, or multiple processors or computers.
  • the processes and logic flows described in this specification can be performed by one or more programmable processors executing one or more computer programs to perform functions by operating on input data and generating output.
  • the processes and logic flows can also be performed by, and apparatus can also be implemented as, special purpose logic circuitry, e.g., an FPGA (field programmable gate array) or an ASIC (application specific integrated circuit).
  • the term "data processing apparatus” encompasses all apparatus, devices, and machines for processing data, including by way of example a programmable processor, a computer, or multiple processors or computers.
  • the apparatus can include, in addition to hardware, code that creates an execution environment for the computer program in question, e.g., code that constitutes processor firmware, a protocol stack, a database management system, an operating system, or a combination of one or more of them.
  • processors suitable for the execution of a computer program include, by way of example, both general and special purpose microprocessors, and any one or more processors of any kind of digital computer.
  • Computer readable media suitable for storing computer program instructions and data include all forms of nonvolatile memory, media and memory devices, including by way of example semiconductor memory devices, e.g., EPROM, EEPROM, and flash memory devices; magnetic disks, e.g., internal hard disks or removable disks; magneto optical disks; and CD ROM and DVD-ROM disks.
  • semiconductor memory devices e.g., EPROM, EEPROM, and flash memory devices
  • magnetic disks e.g., internal hard disks or removable disks
  • magneto optical disks e.g., CD ROM and DVD-ROM disks.
  • the processor and the memory can be supplemented by, or incorporated in, special purpose logic circuitry.
  • components A, B, and C can consist of (i.e., contain only) components A, B, and C, or can contain not only components A, B, and C but also one or more other components.
  • compositions, an element or a group of elements are preceded with the transitional phrase “comprising” or grammatical equivalents thereof, it is understood that it is contemplated that the same composition or group of elements may be preceded with transitional phrases “consisting essentially of,” “consisting of,” “selected from the group of consisting of,” or “is” preceding the recitation of the composition, element, or elements and vice versa.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Laser Beam Processing (AREA)

Abstract

Systèmes et procédés de découpe de substrats comprenant des métaux, par exemple, des métaux de lithium, qui peuvent être utilisés dans des dispositifs de stockage d'énergie. Selon un aspect, l'invention propose un système de refendage d'une pile de couches de support flexible. Le système comprend une source laser configurée pour générer un faisceau laser, le faisceau laser étant dirigé vers une première surface d'une pile de couches de support flexible. Le système comprend en outre un dispositif de balayage optique configuré pour diriger le faisceau laser vers la première surface de la pile de couches de support flexible. Le système comprend en outre un rouleau de capture positionné à l'opposé du faisceau laser, le rouleau de capture étant positionné pour entrer en contact avec une seconde surface de la pile de couches de support flexible, la seconde surface étant opposée à la première surface. Le système comprend en outre un ensemble de coupe positionné en aval du faisceau laser.
PCT/US2024/062414 2024-01-04 2024-12-31 Refendage ou découpe facile d'un substrat flexible contenant un métal réactif ou un film d'alliage Pending WO2025147470A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202463617567P 2024-01-04 2024-01-04
US63/617,567 2024-01-04

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WO2025147470A1 true WO2025147470A1 (fr) 2025-07-10

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US20060191630A1 (en) * 2002-05-21 2006-08-31 3M Innovative Properties Company Method for subdividing multilayer optical film cleanly and rapidly
KR20130030746A (ko) * 2010-03-24 2013-03-27 수미토모 케미칼 컴퍼니 리미티드 절단기, 이를 구비하는 슬리터기 및 필름의 절단 방법
JP2015188905A (ja) * 2014-03-27 2015-11-02 日産自動車株式会社 切断装置および切断方法
JP2018089667A (ja) * 2016-12-06 2018-06-14 パナソニックＩｐマネジメント株式会社 レーザ切断装置
CN216758598U (zh) * 2021-11-08 2022-06-17 深圳吉阳智能科技有限公司 激光分条装置和极片分条设备

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060191630A1 (en) * 2002-05-21 2006-08-31 3M Innovative Properties Company Method for subdividing multilayer optical film cleanly and rapidly
KR20130030746A (ko) * 2010-03-24 2013-03-27 수미토모 케미칼 컴퍼니 리미티드 절단기, 이를 구비하는 슬리터기 및 필름의 절단 방법
JP2015188905A (ja) * 2014-03-27 2015-11-02 日産自動車株式会社 切断装置および切断方法
JP2018089667A (ja) * 2016-12-06 2018-06-14 パナソニックＩｐマネジメント株式会社 レーザ切断装置
CN216758598U (zh) * 2021-11-08 2022-06-17 深圳吉阳智能科技有限公司 激光分条装置和极片分条设备

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