[go: up one dir, main page]

WO2025142689A1 - Procédé d'usinage d'objet et procédé de fabrication de dispositif à semi-conducteur - Google Patents

Procédé d'usinage d'objet et procédé de fabrication de dispositif à semi-conducteur Download PDF

Info

Publication number
WO2025142689A1
WO2025142689A1 PCT/JP2024/044826 JP2024044826W WO2025142689A1 WO 2025142689 A1 WO2025142689 A1 WO 2025142689A1 JP 2024044826 W JP2024044826 W JP 2024044826W WO 2025142689 A1 WO2025142689 A1 WO 2025142689A1
Authority
WO
WIPO (PCT)
Prior art keywords
virtual
processing
laser processing
modified region
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/JP2024/044826
Other languages
English (en)
Japanese (ja)
Inventor
恭弘 三山
剛志 坂本
克洋 是松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of WO2025142689A1 publication Critical patent/WO2025142689A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • a method for processing an object includes a laser processing step in which a modified region is formed along a virtual surface inside the object by irradiating the object with laser light (see, for example, Patent Document 1). After the laser processing step, a part of the object is peeled off, with the modified region across the virtual surface as the boundary.
  • a first laser processing step is first used to form multiple cracks that are intermittently connected along at least a first portion of the imaginary surface, and then a second laser processing step is used to connect the multiple cracks and extend them across the entire imaginary surface.
  • the intermittently connected multiple cracks can be used to favorably induce the cracks to extend across the entire imaginary surface. Therefore, it is possible to prevent cracks that do not follow the imaginary surface from being unintentionally formed in the object, compared to when a crack that extends across the entire imaginary surface is formed in one laser processing run.
  • the object processing method may be the object processing method described in [1] above, in which, in the first and second laser processing steps, the laser light is irradiated along a processing line having a plurality of parallel lines arranged in line on the virtual surface to form the modified region, the first processing condition is a condition under which the processing state of the modified region in the first portion after the first laser processing step is a first slicing state, the second processing condition is a condition under which the processing state of the modified region over the entire virtual surface after the second laser processing step is a second slicing state, the first slicing state is a state in which at least some of the cracks included in the modified region are not connected to each other in a direction intersecting the processing progress direction, and the second slicing state is a state in which the cracks included in the modified region extend and connect to each other in the processing progress direction and in a direction intersecting the processing progress direction.
  • the object processing method according to the present disclosure may be [3] "the object processing method described in [2] above, in which the first slicing state is a state in which at least some of the multiple cracks contained in the modified region are not connected to each other in the processing progress direction and in a direction intersecting the processing progress direction.” In this case, it is possible to reliably realize multiple intermittent cracks formed by the first laser processing step.
  • the object processing method according to the present disclosure may be the object processing method described in any one of [1] to [4] above, [5] "wherein the object has a front surface and a back surface opposite to the front surface, and is configured to include a peripheral portion located on the periphery and a main body portion located inside the peripheral portion when viewed from a direction facing the front surface, the imaginary surface has a first surface formed inside the object along the boundary between the peripheral portion and the main body portion, and a second surface formed inside the peripheral portion near the back surface, and the first portion includes at least a portion connecting the first surface and the second surface.” Cracks that do not run along the imaginary surface are likely to form from such a first portion.
  • multiple cracks that are intermittently connected along the first portion are formed, so that the extension of the crack along the first portion can be suitably induced. In other words, it is possible to suppress the formation of cracks that do not run along the imaginary surface from the first portion.
  • the imaging section 25 images the object 11 from a direction along the incident direction of the laser light L.
  • the imaging section 25 includes an alignment camera AC and an imaging unit IR.
  • the alignment camera AC and the imaging unit IR are attached to the mounting section 21 together with the laser processing head 3.
  • the alignment camera AC images, for example, a device pattern, etc., using light that passes through the object 11. The image obtained in this way is used to align the irradiation position of the laser light L with respect to the object 11.
  • the control unit 8 rotates the stage 2 and positions the focusing position on the virtual surface M of the target object 11. Under AF tracking control, the control unit 8 controls the start and stop of irradiation of the laser light L in the laser processing head 3 based on the ⁇ information, thereby executing a trimming process to form a modified region 12 along the virtual surface M.
  • the trimming process is a process performed by the control unit 8 to realize the trimming process.
  • the GUI 9 displays various types of information.
  • the GUI 9 includes, for example, a touch panel display.
  • Various settings related to processing conditions are input to the GUI 9 by the user's touch or other operations.
  • the GUI 9 constitutes an input unit that accepts input from the user.
  • the object transport mechanism 40 comprises a control unit 48 and a GUI 49.
  • the control unit 48 is configured as a computer device including a processor, memory, storage, and a communication device. In the control unit 48, software loaded into the memory etc. is executed by the processor, and the reading and writing of data in the memory and storage, as well as communication by the communication device, are controlled by the processor.
  • the control unit 48 controls each part of the object transport mechanism 40 and realizes various functions.
  • the GUI 49 displays various information.
  • the GUI 49 includes, for example, a touch panel display. Various settings related to transport conditions are input into the GUI 49 by the user's operation such as touching.
  • the grinding device 60 is a device that grinds the object 11 after being processed by the laser processing device 1.
  • the grinding device 60 is a device that grinds a removal area from the surface 11a of the object 11 to a planned grinding position (planned grinding depth).
  • the grinding device 60 includes a grinding wheel 61 that is a grinding stone that can rotate at high speed, a base 62 that rotatably supports the grinding wheel, a vertical rail 63 for moving the base 62 in the vertical direction, a horizontal rail 64 for moving the base 62 in the horizontal direction, a thickness meter 66 that measures the thickness of the object 11 to be ground, and a stage 67 on which the object 11 to be ground is placed.
  • the stage 67 is configured to be rotatable about an axis parallel to the vertical direction as a center line.
  • the grinding device 60 includes a control unit 68 and a GUI 69.
  • the control unit 68 is configured as a computer device including a processor, memory, storage, and a communication device. In the control unit 68, software loaded into the memory etc. is executed by the processor, and the reading and writing of data in the memory and storage, as well as communication by the communication device, are controlled by the processor.
  • the control unit 68 controls each part of the grinding device 60 and realizes various functions.
  • the GUI 69 displays various information.
  • the GUI 69 includes, for example, a touch panel display. Various settings related to grinding conditions are input into the GUI 69 by the user's operation such as touching.
  • the object 11 includes a main body portion R, which is the effective area, and a peripheral portion E, which is the removal area.
  • the main body portion R is a circular portion including the center of the object 11 when viewed from the Z direction, which is the direction facing the surface 11a (thickness direction of the object 11).
  • the peripheral portion E is a region of the object 11 located outside the main body portion R.
  • the peripheral portion E is a portion located on the periphery of the object 11 when viewed from the Z direction, and in this case is the outer edge portion of the object 11 other than the main body portion R.
  • the peripheral portion E is an annular portion that surrounds the main body portion R.
  • the peripheral portion E includes a bevel portion on the outer edge of the object 11.
  • laser light L is irradiated along first portions M8a and M8b of the imaginary surface M under first processing conditions to form the modified region 12a (first laser processing step).
  • the first portions M8a and M8b are portions that connect the first surface M3 and the second surface M5 on the imaginary surface M.
  • the first portions M8a and M8b are bent portions on the imaginary surface M.
  • the first portions M8a and M8b are surfaces that bend in multiple stages.
  • the first portion M8a is an annular surface when viewed from the Z direction.
  • the first portion M8a is an inclined surface that is inclined at a first angle with respect to the horizontal plane so as to approach the front surface 11a as it moves radially inward.
  • a cross section aligned along the Z direction When a cross section that includes the central axis of the object 11 and is aligned along the Z direction (hereinafter referred to as a "cross section aligned along the Z direction") is viewed, the first portion M8a extends linearly.
  • the radially inner side of the first portion M8a is connected to the end of the first surface M3 on the back surface 11b side.
  • the first portion M8b is a circular ring-shaped surface when viewed from the Z direction.
  • the first portion M8b is an inclined surface that inclines toward the front surface 11a at a second angle, which is smaller than the first angle, relative to the horizontal plane as it moves radially inward. In a cross-sectional view along the Z direction, the first portion M8b extends in a straight line.
  • the radial inner side of the first portion M8b is connected to the end of the first portion 8a on the back surface 11b side.
  • the radial outer side of the first portion M8b is connected to the radial inner end of the second surface M5.
  • the laser processing head 3 irradiates the target object 11 with laser light L under first processing conditions, and focuses the laser light L on processing lines 5 set in the first portions M8a, M8b on the virtual surface M inside the target object 11.
  • AF tracking control is performed to make the focusing position follow the displacement of the surface 11a, which is the laser light incident surface.
  • This laser processing is repeatedly performed on all processing lines 5 on the first portions M8a, M8b. As a result, modified regions 12a are formed along the first portions M8a, M8b.
  • a modified region 12a (here, a modified region 12a in a first slicing state) in which the multiple cracks contained therein are intermittently connected is formed along the first portions M8a and M8b of the virtual surface M.
  • the laser processing in the first laser processing step is also called dot line processing.
  • laser light L is irradiated along the first surface M3 and the second surface M5 of the imaginary surface M under the second processing conditions to form the modified region 12b (second laser processing step).
  • the laser processing head 3 irradiates the target object 11 with laser light L under the second processing conditions, and focuses the laser light L on the processing line 5 set on the first surface M3 and the second surface M5, which are the portions other than the first portions M8a and M8b on the virtual surface M inside the target object 11.
  • AF tracking control is performed to make the focusing position follow the displacement of the surface 11a, which is the laser light incident surface.
  • This laser processing is repeatedly performed on all processing lines 5 on the first surface M3 and the second surface M5. As a result, modified regions 12b are formed along the first surface M3 and the second surface M5.
  • the modified region 12b in the second slicing state is formed along the first surface M3 and the second surface M5, and the modified region 12a in the first slicing state already formed in the first laser processing step changes into the modified region 12c in the second slicing state as the cracks extend with the formation of the modified region 12b.
  • the slicing half cut (SHC) state is a state in which cracks extending from multiple modified spots 12s included in the modified region 12 extend in a direction along the parallel lines 5a (the processing progression direction).
  • the slicing full cut (SFC) state is a state in which cracks extending from multiple modified spots 12s included in the modified region 12 extend in a direction along the multiple parallel lines 5a and in a direction intersecting the parallel lines 5a and connect to each other.
  • the slicing full cut state is a state in which cracks extending from the modified spots 12s are connected across multiple parallel lines 5a.
  • the object 11 is transported from the laser processing device 1 to the grinding device 60 by the object transport mechanism 40 based on the transport conditions input via the GUI 49.
  • the grinding device 60 performs a grinding step (removal step) based on the grinding conditions input via the GUI 69. That is, as shown in FIG. 7, the removal area from the surface 11a of the object 11 after the peeling step to the planned grinding depth is removed by grinding with the polishing wheel 61. As a result of the above, the semiconductor device 11K is obtained (manufactured). Note that between the peeling step and the removal step, unevenness planarization processing by laser processing or etching processing may be performed.
  • the first processing condition is a condition under which the processing state of the modified area 12a of the first portions M8a, M8b after the first laser processing step is a first slicing state
  • the second processing condition is a condition under which the processing state of the modified area 12 over the entire virtual surface M after the second laser processing step is a second slicing state.
  • the first slicing state is a slicing stealth state. In this case, it is possible to reliably realize multiple intermittent cracks formed by the first laser processing step.
  • the virtual surface M has a first surface M3 along the boundary between the peripheral portion E and the main body portion R, and a second surface M5 formed near the back surface 11b of the peripheral portion E, and the first portions M8a and M8b form a portion connecting the first surface M3 and the second surface M5. Cracks that do not run along the virtual surface M are likely to form from such first portions M8a and M8b.
  • multiple cracks that are intermittently connected along the first portions M8a and M8b are formed, so that the crack can be suitably guided to run along the first portions M8a and M8b. In other words, it is possible to suppress the formation of cracks that do not run along the virtual surface M from the first portions.
  • laser light L is irradiated along the portions of the imaginary plane M other than the first portions M8a, M8b to form the modified region 12b.
  • the cracks are connected along the first portions M8a, M8b as well, so there is no need to perform laser processing again in the second laser processing step along the first portions M8a, M8b, and therefore the processing time can be reduced accordingly, enabling faster tact times.
  • the object processing method of this embodiment includes, after the second laser processing step, a peeling step in which the peripheral portion E is peeled off at the boundary of the modified region 12 that spans the imaginary surface M.
  • a peeling step in which the peripheral portion E is peeled off at the boundary of the modified region 12 that spans the imaginary surface M.
  • the processed state of the modified region 12 formed on the first surface M3 of the imaginary surface M at the connection portion with the first portion M8a may be a slicing stealth state.
  • the processed state of the modified region 12 formed on the second surface M5 of the imaginary surface M at the connection portion with the first portion M8b may be a slicing stealth state. In this case, it is possible to further suppress the formation of cracks that do not follow the imaginary surface M.
  • the object processing method of this embodiment may include a homogenization step for homogenizing at least one of the reflectance and transmittance at the laser light incident surface of the object 11 before the first laser processing step.
  • the homogenization step may remove the film by irradiating or etching the film with laser light.
  • the first laser processing step it is necessary to form the modified region 12 in the first portions M8a and M8b so that the cracks are not connected (so that multiple cracks are intermittently connected).
  • This first laser processing step is easily affected by the state of the laser light incident surface of the object 11, for example, because the output of the laser light L is weak, so this embodiment is very significant.
  • Figures 9(a), 9(b) and 9(c) are cross-sectional views of an object 11 illustrating laser processing along a virtual plane M according to the second modified example.
  • the virtual plane M according to the second modified example differs from the virtual plane M according to the first modified example (see Figure 8(a)) in that it includes a first plane M23 instead of the first plane M13.
  • the first plane M23 is a surface shaped to correspond to the peripheral surface of a truncated cone, and is an inclined surface that slopes radially inward in the Z direction as it approaches the surface 11a.
  • laser light L is irradiated under the first processing conditions along the first portions M38a, 38b of the virtual surface M to form a modified region 12a in the first slicing state.
  • laser light L is irradiated under the second processing conditions along the first surface M3 and the second surface M5 to form a modified region 12b in the second slicing state.
  • the crack may extend radially inward from the bonding surface between the first device layer 161 and the second device layer 162, then cross the pattern of the first device layer 161 to reach the modified region 12 inside the first substrate 151, and extend along the modified region 12.
  • the second surface of the virtual surface M formed in the vicinity of the back surface 151b of the first substrate 151 in the object 111 is preferably as close to the back surface 151b as possible, and may be set so that at least a portion of it overlaps the back surface 151b. This allows for a reduction in the amount of material that is removed during subsequent unevenness flattening processing by laser processing or etching, thereby enabling faster tact times.
  • the radial cutting process is a process for separating the unnecessary portion to be removed by the trimming process.
  • the start and stop of the irradiation of the laser light L in the laser processing head 3 is controlled under AF tracking control with the focusing position positioned on the radial line 5h on the target object 11, and the focusing position of the laser light L is moved along the radial line 5h.
  • This laser processing is repeatedly performed on all the radial lines 5h, thereby forming one or multiple rows of modified regions 12 in the Z direction along the radial lines 5h.
  • Such a radial cutting process makes it possible to reliably peel off the peripheral portion E.
  • the order of laser processing of these multiple surfaces is not particularly limited and may be in any order.
  • the index direction is not particularly limited and may be a direction from the radial inside to the radial outside, or a direction from the radial outside to the radial inside, or these directions may be combined as appropriate depending on the situation.
  • the output of the laser light in the first laser processing step does not have to be constant.
  • the spacing between the multiple cracks formed by the first laser processing step does not have to be constant.
  • the laser light L may be branched in the processing progress direction and/or index direction to simultaneously form multiple modified spots 12s.
  • the pulse width of the irradiated laser light L may be different between the first laser processing step and the second laser processing step.
  • By shortening the pulse width of the laser light L in the first laser processing step it is possible to perform laser processing that is less likely to cause cracks to connect.
  • By lengthening the pulse width of the laser light L in the first laser processing step it is possible to create high-quality cracks across the entire area of the virtual surface M in the second laser processing step.
  • by shortening the pulse width of the laser light L in the first laser processing step it is possible to more easily achieve the first processing condition in which cracks connect intermittently.
  • laser processing is performed along the first surface M3 and the second surface M5 of the virtual surface M in the second laser processing step, but this is not limited to this.
  • laser processing may be performed only along the second surface M5 of the virtual surface M in the second laser processing step (i.e., laser processing is not performed along the first surface M3), and the processing state of the modified region 12 along the first portions M8a and M8b and the second surface M5 may be a slicing full cut state.
  • This makes it possible to shorten the tact time by not laser processing the first surface M3.
  • the desired processing result can be obtained with shortened tact time.
  • a portion of the peripheral portion E is peeled off at the boundary of the modified region 12 across the imaginary plane M, but a portion of the main body portion R may also be peeled off (i.e., peeled off so as to hollow out a portion of the main body portion R while leaving the peripheral portion E).
  • processing may be performed as exemplified below.
  • the imaginary surface M according to the 11th modified example has an imaginary body surface M10 formed along the back surface 11b inside the main body R, and an imaginary peripheral surface M20 formed from the outer edge of the imaginary body surface M10 to the back surface 11b and including a portion along the boundary between the peripheral edge portion E and the main body R.
  • a processing line 5 having a plurality of parallel lines 5a arranged side by side is set on the imaginary surface M (see FIG. 4).
  • the imaginary body surface M10 is a circular surface parallel to the back surface 11b.
  • the imaginary peripheral surface M20 includes an imaginary vertical surface (imaginary intersection surface) M21 that extends perpendicularly (intersecting) to the back surface 11b along the boundary between the peripheral portion E and the main body portion R, and an imaginary connecting surface M22 that connects the imaginary body surface M10 and the imaginary vertical surface M21.
  • the imaginary vertical surface M21 is a cylindrical surface formed at the boundary between the peripheral portion E and the main body portion R. Note that the imaginary vertical surface M21 is included here as an imaginary intersecting surface, but the imaginary intersecting surface may be any surface that extends along the boundary between the peripheral portion E and the main body portion R so as to intersect with the back surface 11b.
  • the imaginary connecting surface M22 is an imaginary surface that extends from the outer edge of the imaginary body surface M10 to the end of the imaginary vertical surface M21 in an outwardly convex curved shape.
  • the imaginary connecting surface M22 is a bent portion of the imaginary surface M.
  • the virtual connection surface M22 is a circular surface when viewed from a direction perpendicular to the surface 11a.
  • the first portion of the virtual surface M that is the target of the dot line processing includes at least a portion of the virtual peripheral surface M20.
  • the first portion includes the virtual connecting surface M22.
  • laser light L is irradiated under the first processing conditions along the virtual connection surface M22 on the virtual peripheral surface M20 of the virtual surface M to form a modified region 12a in the first slicing state (dot line processing: first laser processing step).
  • the laser light L is irradiated under the second processing conditions along the virtual vertical surface M21 on the virtual peripheral surface M20 of the virtual surface M to form the modified region 12b in the second slicing state (second laser processing step).
  • the laser light L is irradiated under the second processing conditions along the virtual main body surface M10 of the virtual surface M to form the modified region 12b in the second slicing state (second laser processing step).
  • the modified region 12b in the second slicing state is formed along the imaginary vertical plane M21 and the imaginary body surface M10, and the modified region 12a in the first slicing state already formed in the first laser processing step changes into the modified region 12c in the second slicing state as the cracks extend with the formation of the modified region 12b.
  • the multiple cracks contained in the modified region 12 are connected to each other and extend across the entire area of the imaginary surface M (crack induction step).
  • an external stress is applied to the object 11, and a part of the main body R of the object 11 is peeled off with the modified region 12 across the imaginary plane M as the boundary (peeling process).
  • the peeled object 11 (part of the main body R) is cut into a plurality of chips (cutting process). Any method may be used to cut the object 11 in the cutting process, such as laser dicing, blade dicing, and plasma dicing. This completes the method for manufacturing a semiconductor device.
  • the object processing method according to the eleventh modified example also achieves the above-mentioned effect of preventing cracks that do not follow the imaginary surface M from being unintentionally formed in the object 11.
  • Bevel cracks in which cracks along the virtual body surface M10 extend even to the peripheral portion E can be suppressed.
  • deterioration of the quality of the area where the virtual vertical surface M21 and the virtual body surface M10 are connected can be suppressed.
  • the crack does not reach the bonding region 19 including the device layer between the first substrate 151 and the second substrate 152 in order to prevent bottom cracks, in which the crack extends to the second substrate 152, which is not laser processed.
  • the modified region 12b is formed along the virtual vertical plane M21 (see FIG.
  • the length of the crack C5 in the modified region 12b may be reduced (the laser processing related to the formation of the modified region 12b may be weakened). If the length of the crack C5 is small, the modified region 12b must be formed close to the back surface 11b in order for the crack C5 to reach the back surface 11b of the first substrate 151. In this case, the distance between the modified region 12b and the back surface 11b is short, so that the radial swing of the crack C5 can be reduced. If the swing of the crack C5 is small, it becomes easier to control the bottom end of the crack C5, and it becomes possible to adjust the crack C5 so that it extends outside the bonding region 19 (so that the crack C5 does not extend into the bonding region 19). As a result, it becomes possible to suppress the bottom cracking described above.
  • FIGS. 22(a) to 22(d) are diagrams for explaining a method for processing an object and a method for manufacturing a semiconductor device according to the twelfth modified example.
  • the twelfth modified example differs from the eleventh modified example in that the order of laser processing is different. Below, a description of the similarities to the eleventh modified example will be omitted, and only the differences will be described.
  • laser light L is irradiated along the virtual vertical plane M21 (see FIG. 19(a)) of the virtual surface M to form the modified region 12b (intersection crack processing step). Specifically, before the dot line processing, laser light L is irradiated under the second processing conditions along the virtual vertical plane M21 to form the modified region 12b in the second slicing state.
  • laser light L is irradiated along the virtual connecting surface M22 of the virtual surface M under the first processing conditions to form a modified region 12a in the first slicing state (dot line processing: first laser processing step).
  • laser light L is irradiated along the virtual main body surface M10 of the virtual surface M under the second processing conditions to form a modified region 12b in the second slicing state (second laser processing step).
  • FIGS. 23(a) to 23(d) are diagrams for explaining a method for processing an object and a method for manufacturing a semiconductor device according to the 13th modified example.
  • the 13th modified example differs from the 12th modified example in that the imaginary surface M has an imaginary connecting surface M24 in the shape of a frustum of a cone instead of the imaginary connecting surface M22 (see FIG. 22(a)).
  • the imaginary connecting surface M24 is an imaginary surface that extends from the outer edge of the imaginary main body surface M10 to the end of the imaginary vertical surface M21, toward the outside and the back surface 11b.
  • the object processing method according to the thirteenth modified example also achieves the above-mentioned effect of preventing cracks from being unintentionally formed in the object 11 that do not follow the virtual surface M.
  • the effect of preventing the formation of cracks from the virtual connecting surface M24 that do not follow the virtual surface M can be specifically achieved.
  • laser light L is irradiated along the imaginary body surface M10 (see FIG. 19(a)) of the imaginary surface M to form a modified region 12b (body crack processing step).
  • laser light L is irradiated along the imaginary body surface M10 under the second processing conditions to form a modified region 12b in the second slicing state.
  • the modified region 12b in the second slicing state is formed along the imaginary vertical plane M21, and the modified region 12a in the first slicing state already formed in the first laser processing step changes into the modified region 12c in the second slicing state as the cracks extend with the formation of the modified region 12b.
  • the multiple cracks contained in the modified region 12 are connected to each other and extend across the entire area of the imaginary plane M.
  • 5...processing line 5a...parallel line, 5h...radial line, 11...object (first substrate, second substrate), 11a...front surface (main surface), 11b...back surface (main surface), 12, 12a, 12b, 12c...modified area, 12s...modified spot, 111...object, 161...first device layer, 162...second device layer, C1, C2, C3...crack, E...periphery, G12 ...modification spot group, M3, M13, M23, M53...first surface, M5, M55...second surface, M8a, M8b, M18, M28a, M28b, M38a, M38b, M48, M58...first part, M10...imaginary main body surface, M20...imaginary peripheral surface, M21...imaginary vertical surface (imaginary intersection surface), M22, M24...imaginary connection surface, L...laser light, M...imaginary surface, R...main body part.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laser Beam Processing (AREA)

Abstract

Un procédé d'usinage d'un objet selon la présente invention comprend une étape d'usinage au laser consistant à former une région modifiée le long d'un plan imaginaire à l'intérieur de l'objet. L'étape d'usinage au laser comprend une première étape d'usinage au laser dans laquelle un faisceau laser est irradié dans une première condition d'usinage le long d'au moins une première partie du plan imaginaire afin de former une région modifiée, et après la première étape d'usinage au laser, une seconde étape d'usinage au laser dans laquelle un faisceau laser est irradié dans une seconde condition d'usinage le long du plan imaginaire afin de former une région modifiée. La première condition d'usinage est une condition dans laquelle une pluralité de fissures incluses dans la région modifiée sont reliées par intermittence, et la seconde condition d'usinage est une condition dans laquelle une pluralité de fissures incluses dans la région modifiée formée par les première et seconde étapes d'usinage au laser sont reliées entre elles et s'étendent sur toute la surface du plan imaginaire après la seconde étape d'usinage au laser.
PCT/JP2024/044826 2023-12-27 2024-12-18 Procédé d'usinage d'objet et procédé de fabrication de dispositif à semi-conducteur Pending WO2025142689A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023-221749 2023-12-27
JP2023221749 2023-12-27

Publications (1)

Publication Number Publication Date
WO2025142689A1 true WO2025142689A1 (fr) 2025-07-03

Family

ID=96218961

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2024/044826 Pending WO2025142689A1 (fr) 2023-12-27 2024-12-18 Procédé d'usinage d'objet et procédé de fabrication de dispositif à semi-conducteur

Country Status (1)

Country Link
WO (1) WO2025142689A1 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023069020A (ja) * 2021-11-04 2023-05-18 浜松ホトニクス株式会社 レーザ加工装置、及び、レーザ加工方法
JP2023069018A (ja) * 2021-11-04 2023-05-18 浜松ホトニクス株式会社 レーザ加工装置、及び、レーザ加工方法
JP2023171413A (ja) * 2018-03-14 2023-12-01 東京エレクトロン株式会社 基板処理方法及び基板処理システム

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023171413A (ja) * 2018-03-14 2023-12-01 東京エレクトロン株式会社 基板処理方法及び基板処理システム
JP2023069020A (ja) * 2021-11-04 2023-05-18 浜松ホトニクス株式会社 レーザ加工装置、及び、レーザ加工方法
JP2023069018A (ja) * 2021-11-04 2023-05-18 浜松ホトニクス株式会社 レーザ加工装置、及び、レーザ加工方法

Similar Documents

Publication Publication Date Title
KR20210080510A (ko) 레이저 가공 장치 및 레이저 가공 방법
US12090574B2 (en) Laser slicing apparatus and laser slicing method
KR20210081403A (ko) 레이저 가공 장치 및 레이저 가공 방법
JP7460377B2 (ja) レーザ加工装置及びレーザ加工方法
JP7628401B2 (ja) 半導体部材の製造方法
JP7438048B2 (ja) レーザ加工装置及びレーザ加工方法
JP7438047B2 (ja) レーザ加工装置及びレーザ加工方法
JP7560055B2 (ja) レーザ加工方法、半導体部材製造方法及びレーザ加工装置
JP5916336B2 (ja) ウエーハの研削方法
JP7629926B2 (ja) レーザ加工装置、及び、レーザ加工方法
JP7438046B2 (ja) レーザ加工装置及びレーザ加工方法
JP7746429B2 (ja) レーザ加工装置、及び、レーザ加工方法
WO2025142689A1 (fr) Procédé d'usinage d'objet et procédé de fabrication de dispositif à semi-conducteur
JP2025103965A (ja) 対象物加工方法
JP7471152B2 (ja) リフトオフ方法及びレーザー加工装置
TW202542981A (zh) 對象物加工方法及半導體裝置的製造方法
CN116075389B (zh) 激光加工装置、及激光加工方法
WO2025169590A1 (fr) Appareil d'usinage par faisceau laser et procédé d'usinage par faisceau laser
WO2025169588A1 (fr) Dispositif de traitement laser et procédé de traitement laser
JP2024021699A (ja) チップの製造方法
JP2025121706A (ja) レーザ加工装置、及び、レーザ加工方法
CN115515746A (zh) 激光加工装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 24912578

Country of ref document: EP

Kind code of ref document: A1