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WO2025142488A1 - Capteur magnétique et système de détection magnétique - Google Patents

Capteur magnétique et système de détection magnétique Download PDF

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Publication number
WO2025142488A1
WO2025142488A1 PCT/JP2024/043815 JP2024043815W WO2025142488A1 WO 2025142488 A1 WO2025142488 A1 WO 2025142488A1 JP 2024043815 W JP2024043815 W JP 2024043815W WO 2025142488 A1 WO2025142488 A1 WO 2025142488A1
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WO
WIPO (PCT)
Prior art keywords
effect element
magnetoresistance effect
magnetoresistive
pattern portion
magnetic field
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Pending
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PCT/JP2024/043815
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English (en)
Japanese (ja)
Inventor
琢也 米山
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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Publication of WO2025142488A1 publication Critical patent/WO2025142488A1/fr
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
    • G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
    • G01D5/16—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying resistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Definitions

  • the present disclosure relates generally to magnetic sensors and magnetic detection systems, and more particularly to a magnetic sensor having at least one bias magnet, and a magnetic detection system including the magnetic sensor.
  • Patent Document 1 describes a rotation angle detection sensor (magnetic sensor) that detects the rotation angle of a rotating shaft.
  • a rotation angle detection sensor magnetic sensor
  • at least two pairs of GMR (Giant Magnet Resistive) elements having a free magnetic layer and a pinned magnetic layer are provided on a substrate.
  • each pair of GMR elements is arranged facing each other across the rotation axis of the magnet's rotating shaft, and the magnetization directions of the pinned magnetic layers are opposite to each other.
  • the two GMR elements in each pair are arranged at different positions in the X-axis direction or the Y-axis direction. Therefore, the magnetic fields applied to the two GMR elements in each pair are different, which may result in reduced detection accuracy.
  • the objective of this disclosure is to provide a magnetic sensor and a magnetic detection system that can suppress deterioration in detection accuracy.
  • a magnetic sensor includes at least one bias magnet, a first full bridge circuit, a second full bridge circuit, and a substrate.
  • the at least one bias magnet generates a bias magnetic field along the positive direction of the X-axis, a bias magnetic field along the negative direction of the X-axis, a bias magnetic field along the positive direction of the Y-axis, which is an axis perpendicular to the X-axis, and a bias magnetic field along the negative direction of the Y-axis.
  • the substrate holds at least one bias magnet, a first full bridge circuit, and a second full bridge circuit.
  • the first full bridge circuit has a first series circuit and a second series circuit.
  • the first series circuit includes a first magnetoresistance effect element and a second magnetoresistance effect element that are connected in series to each other and detect a magnetic field along the X-axis.
  • the second series circuit includes a third magnetoresistance effect element and a fourth magnetoresistance effect element that are connected in series to each other and detect a magnetic field along the X-axis.
  • the first series circuit and the second series circuit are connected in parallel to each other.
  • the second full bridge circuit has a third series circuit and a fourth series circuit.
  • the third series circuit includes a fifth magnetoresistance effect element and a sixth magnetoresistance effect element that are connected in series to each other and detect a magnetic field along the Y-axis.
  • the fourth series circuit includes a seventh magnetoresistance effect element and an eighth magnetoresistance effect element that are connected in series to each other and detect a magnetic field along the Y-axis.
  • the third series circuit and the fourth series circuit are connected in parallel to each other.
  • a bias magnetic field along the positive direction of the X-axis is applied to the first magnetoresistance effect element and the third magnetoresistance effect element.
  • a bias magnetic field along the negative direction of the X-axis is applied to the second magnetoresistance effect element and the fourth magnetoresistance effect element.
  • a bias magnetic field along the positive direction of the Y-axis is applied to the fifth magnetoresistance effect element and the seventh magnetoresistance effect element.
  • a bias magnetic field along the negative direction of the Y-axis is applied to the sixth magnetoresistance effect element and the eighth magnetoresistance effect element.
  • Each of the first magnetoresistance effect element, the second magnetoresistance effect element, the third magnetoresistance effect element, the fourth magnetoresistance effect element, the fifth magnetoresistance effect element, the sixth magnetoresistance effect element, the seventh magnetoresistance effect element, and the eighth magnetoresistance effect element has a magnetoresistance pattern portion formed in a meandering shape.
  • the magnetoresistance pattern portion of the first magnetoresistance effect element and the magnetoresistance pattern portion of the third magnetoresistance effect element overlap in a plan view from a first direction, which is a direction in which the first magnetoresistance effect element and the second magnetoresistance effect element are aligned.
  • the magnetoresistance pattern portion of the second magnetoresistance effect element and the magnetoresistance pattern portion of the fourth magnetoresistance effect element overlap in a plan view from the first direction.
  • the magnetoresistance pattern portion of the fifth magnetoresistance effect element and the magnetoresistance pattern portion of the seventh magnetoresistance effect element overlap in a plan view from a second direction, which is a direction perpendicular to the first direction.
  • the magnetoresistance pattern portion of the sixth magnetoresistance effect element and the magnetoresistance pattern portion of the eighth magnetoresistance effect element overlap in a plan view from the second direction.
  • a magnetic detection system includes the magnetic sensor of the above aspect and a processing circuit.
  • the processing circuit determines the direction of the magnetic field applied to the magnetic sensor based on the output signal of the magnetic sensor.
  • the magnetic sensor and magnetic detection system according to the above aspects of the present disclosure make it possible to suppress a decrease in detection accuracy.
  • FIG. 1 is a plan view of a magnetic sensor according to an embodiment.
  • FIG. 2 is a cross-sectional view of the magnetic sensor according to the embodiment.
  • FIG. 3 is a schematic diagram showing a state in which the magnetic sensor according to the embodiment is used.
  • FIG. 4 is an equivalent circuit diagram of the first full-bridge circuit of the magnetic sensor according to the embodiment.
  • FIG. 5 is an equivalent circuit diagram of the second full-bridge circuit of the magnetic sensor according to the embodiment.
  • FIG. 6 is an explanatory diagram showing an output signal of the magnetic sensor according to the embodiment.
  • FIG. 7 is a layout diagram showing an example of the layout of magnetoresistance effect elements of the magnetic sensor according to the embodiment.
  • FIG. 8 is a schematic diagram of a magnetic sensor according to an embodiment.
  • FIG. 9 is a schematic diagram of a magnetic sensor according to a comparative example.
  • the magnetic sensor 100 includes at least one bias magnet 5, a first full bridge circuit 1, a second full bridge circuit 2, and a substrate 74 (see FIG. 2 described later).
  • the at least one bias magnet 5 generates a bias magnetic field along the positive direction of the X-axis, a bias magnetic field along the negative direction of the X-axis, a bias magnetic field along the positive direction of the Y-axis, which is an axis perpendicular to the X-axis, and a bias magnetic field along the negative direction of the Y-axis.
  • the substrate 74 holds the at least one bias magnet 5, the first full bridge circuit 1, and the second full bridge circuit 2.
  • the first full-bridge circuit 1 has a first series circuit 11 and a second series circuit 12.
  • the first series circuit 11 includes a first magnetoresistance effect element 111 and a second magnetoresistance effect element 112.
  • the first magnetoresistance effect element 111 and the second magnetoresistance effect element 112 are connected in series to each other and detect a magnetic field along the X-axis.
  • the second series circuit 12 includes a third magnetoresistance effect element 121 and a fourth magnetoresistance effect element 122.
  • the third magnetoresistance effect element 121 and the fourth magnetoresistance effect element 122 are connected in series to each other and detect a magnetic field along the X-axis.
  • the first series circuit 11 and the second series circuit 12 are connected in parallel to each other.
  • the second full-bridge circuit 2 has a third series circuit 21 and a fourth series circuit 22.
  • the third series circuit 21 includes a fifth magnetoresistance effect element 211 and a sixth magnetoresistance effect element 212.
  • the fifth magnetoresistance effect element 211 and the sixth magnetoresistance effect element 212 are connected in series to each other and detect a magnetic field along the Y-axis.
  • the fourth series circuit 22 includes a seventh magnetoresistance effect element 221 and an eighth magnetoresistance effect element 222.
  • the seventh magnetoresistance effect element 221 and the eighth magnetoresistance effect element 222 are connected in series to each other and detect a magnetic field along the Y-axis.
  • the third series circuit 21 and the fourth series circuit 22 are connected in parallel to each other.
  • a bias magnetic field is applied to the first magnetoresistance effect element 111 and the third magnetoresistance effect element 121 along the positive direction of the X-axis.
  • a bias magnetic field is applied to the second magnetoresistance effect element 112 and the fourth magnetoresistance effect element 122 along the negative direction of the X-axis.
  • a bias magnetic field is applied to the fifth magnetoresistance effect element 211 and the seventh magnetoresistance effect element 221 along the positive direction of the Y-axis.
  • a bias magnetic field is applied to the sixth magnetoresistance effect element 212 and the eighth magnetoresistance effect element 222 along the negative direction of the Y-axis.
  • Each of the first magnetoresistance effect element 111, the second magnetoresistance effect element 112, the third magnetoresistance effect element 121, the fourth magnetoresistance effect element 122, the fifth magnetoresistance effect element 211, the sixth magnetoresistance effect element 212, the seventh magnetoresistance effect element 221 and the eighth magnetoresistance effect element 222 has a magnetoresistance pattern portion 31, 32 (see FIG. 7 described below) formed in a meandering shape.
  • FIG. 7 is a layout diagram showing an example of the arrangement of magnetoresistance effect elements of the magnetic sensor 100 according to the embodiment.
  • the magnetoresistance pattern portion 31 of the first magnetoresistance effect element 111 and the magnetoresistance pattern portion 31 of the third magnetoresistance effect element 121 overlap when viewed from a first direction D1 (see FIG. 7), which is the direction in which the first magnetoresistance effect element 111 and the second magnetoresistance effect element 112 are aligned.
  • the magnetoresistance pattern portion 31 of the second magnetoresistance effect element 112 and the magnetoresistance pattern portion 31 of the fourth magnetoresistance effect element 122 overlap when viewed from a first direction D1.
  • the magnetoresistance pattern portion 32 of the fifth magnetoresistance effect element 211 and the magnetoresistance pattern portion 32 of the seventh magnetoresistance effect element 221 overlap when viewed from a second direction D2 (see FIG. 7), which is perpendicular to the first direction D1.
  • the magnetoresistance pattern portion 32 of the sixth magnetoresistance effect element 212 and the magnetoresistance pattern portion 32 of the eighth magnetoresistance effect element 222 overlap when viewed from the second direction D2.
  • “two magnetoresistance pattern portions 31 overlap when viewed from the first direction D1” means that portions of the two magnetoresistance pattern portions 31 overlap when viewed from the first direction D1.
  • two magnetoresistance pattern portions 32 overlap when viewed from the second direction D2 means that portions of the two magnetoresistance pattern portions 32 overlap when viewed from the second direction D2.
  • the magnetic resistance pattern portion 31 of the first magnetoresistance effect element 111 and the magnetic resistance pattern portion 31 of the third magnetoresistance effect element 121 overlap when viewed from the first direction D1.
  • the magnetic resistance pattern portion 31 of the second magnetoresistance effect element 112 and the magnetic resistance pattern portion 31 of the fourth magnetoresistance effect element 122 overlap when viewed from the first direction D1.
  • the magnetic resistance pattern portion 32 of the fifth magnetoresistance effect element 211 and the magnetic resistance pattern portion 32 of the seventh magnetoresistance effect element 221 overlap when viewed from the second direction D2.
  • the magnetic resistance pattern portion 32 of the sixth magnetoresistance effect element 212 and the magnetic resistance pattern portion 32 of the eighth magnetoresistance effect element 222 overlap when viewed from the second direction D2. This makes it possible to place the first to eighth magnetoresistance effect elements 111, 112, 121, 122, 211, 212, 221, and 222 at positions where the bias magnetic field from the bias magnet 5 is at its maximum. As a result, it is possible to suppress the deterioration of detection accuracy compared to when the two paired magnetoresistance effect elements are placed far apart.
  • first full bridge circuit 1 and the second full bridge circuit 2 are integrated on a single substrate 74. Therefore, compared to a case where a first substrate on which the first full bridge circuit 1 is mounted and a second substrate on which the second full bridge circuit 2 is mounted are separately provided, it is possible to eliminate the need to adjust the positional relationship between the first substrate and the second substrate. It is also possible to prevent a decrease in the detection accuracy of the magnetic field direction due to a misalignment of the positional relationship.
  • the angular difference between the two is 5 degrees or less.
  • the Z-axis which is an axis perpendicular to both the X-axis and the Y-axis, will also be used for explanation.
  • the X-axis, Y-axis, and Z-axis are imaginary axes set on the magnetic sensor 100, and are not physical structures.
  • Fig. 2 is a cross-sectional view of the magnetic sensor 100 according to the embodiment.
  • the magnetic sensor 100 includes a bias magnet 5, a first protective film 71, a GMR film 72, a thermal oxide film 73, a substrate 74, and a second protective film 75.
  • the GMR film 72 includes a first full-bridge circuit 1 and a second full-bridge circuit 2. Note that in Figure 1, only the GMR film 72 and the bias magnet 5 are shown, and the first protective film 71, the thermal oxide film 73, the substrate 74, and the second protective film 75 are not shown.
  • the magnetic detection system 200 includes a magnetic sensor 100 and a processing circuit 201.
  • the processing circuit 201 determines the direction of the magnetic field applied to the magnetic sensor 100 based on the output signals of the magnetic sensor 100 (first output signal, second output signal, third output signal, and fourth output signal, which will be described later).
  • FIG. 3 is a schematic diagram showing a state in which the magnetic sensor 100 according to the embodiment is used.
  • this embodiment describes a case in which the magnetic sensor 100 and the magnetic detection system 200 are used to determine the direction of the magnetic field generated by the rotor 8 of a motor (see FIG. 3), thereby determining the rotation angle of the rotor 8.
  • the rotor 8 includes a plurality of permanent magnets.
  • the plurality of permanent magnets form a plurality of magnetic poles 80.
  • the plurality of magnetic poles 80 are arranged in the rotation direction of the rotor 8 so that the N poles and the S poles are arranged alternately.
  • the plurality of magnetic poles 80 are arranged so that the N poles and the S poles are alternated every 45 degrees along the rotation direction of the rotor 8.
  • the letters "N" representing the N pole and "S” representing the S pole are attached to each magnetic pole 80, but these are letters attached for the purpose of explanation and are not actually attached. The same applies to the "N" and "S” attached to the bias magnet 5 in FIG. 1 and FIG. 2.
  • the bias magnet 5 has a rectangular parallelepiped shape, for example, as shown in Figs. 1 and 2.
  • the bias magnet 5 is a single member.
  • a permanent magnet or an electromagnet may be adopted as the bias magnet 5.
  • the bias magnet 5 is a permanent magnet.
  • the bias magnet 5 is, for example, a ferrite magnet or a neodymium magnet.
  • the bias magnet 5 has two sets of four magnetic poles 50, and in each set, the four magnetic poles 50 are arranged on the same plane.
  • the magnetic poles 50 belonging to different sets are arranged at different positions in the Z-axis direction.
  • the Z coordinates of the four magnetic poles 50 shown in FIG. 1 are greater than the Z coordinates of the remaining four magnetic poles 50.
  • the eight magnetic poles 50 are arranged so that adjacent magnetic poles 50 in the X-axis direction have different poles, and adjacent magnetic poles 50 in the Y-axis direction have different poles.
  • the eight magnetic poles 50 are also arranged so that adjacent magnetic poles 50 in the Z-axis direction have different poles.
  • the substrate 74 has a plate shape, for example, as shown in Fig. 2.
  • the substrate 74 is, for example, a silicon substrate.
  • the substrate 74 holds the bias magnet 5, the first full bridge circuit 1, and the second full bridge circuit 2.
  • the substrate 74 is not limited to a silicon substrate, and may be, for example, an alumina substrate.
  • the GMR film 72 includes multiple layers. The multiple layers are electrically connected to each other via through holes.
  • the GMR film 72 includes a first full-bridge circuit 1 and a second full-bridge circuit 2.
  • FIG. 4 is an equivalent circuit diagram of the first full bridge circuit 1 of the magnetic sensor 100 according to the embodiment.
  • the first full bridge circuit 1 has a first series circuit 11 and a second series circuit 12.
  • the first series circuit 11 and the second series circuit 12 are connected in parallel to each other.
  • the first series circuit 11 includes a first magnetoresistance effect element 111 and a second magnetoresistance effect element 112.
  • the first magnetoresistance effect element 111 and the second magnetoresistance effect element 112 are connected in series to each other and detect a magnetic field along the X-axis.
  • the second series circuit 12 includes a third magnetoresistance effect element 121 and a fourth magnetoresistance effect element 122.
  • the third magnetoresistance effect element 121 and the fourth magnetoresistance effect element 122 are connected in series to each other and detect a magnetic field along the X-axis.
  • the first magnetoresistance effect element 111 and the third magnetoresistance effect element 121 are adjacent to each other in the X-axis direction.
  • the second magnetoresistance effect element 112 and the fourth magnetoresistance effect element 122 are adjacent to each other in the X-axis direction.
  • a bias magnetic field is applied from the bias magnet 5 to the first magnetoresistance effect element 111 and the third magnetoresistance effect element 121 along the positive direction of the X-axis.
  • a bias magnetic field is applied from the bias magnet 5 to the second magnetoresistance effect element 112 and the fourth magnetoresistance effect element 122 along the negative direction of the X-axis.
  • FIG. 5 is an equivalent circuit diagram of the second full-bridge circuit 2 of the magnetic sensor 100 according to the embodiment.
  • the second full-bridge circuit 2 has a third series circuit 21 and a fourth series circuit 22.
  • the third series circuit 21 and the fourth series circuit 22 are connected in parallel to each other.
  • the third series circuit 21 includes a fifth magnetoresistance effect element 211 and a sixth magnetoresistance effect element 212.
  • the fifth magnetoresistance effect element 211 and the sixth magnetoresistance effect element 212 are connected in series to each other and detect a magnetic field along the Y axis.
  • the fourth series circuit 22 includes a seventh magnetoresistance effect element 221 and an eighth magnetoresistance effect element 222.
  • the seventh magnetoresistance effect element 221 and the eighth magnetoresistance effect element 222 are connected in series to each other and detect a magnetic field along the Y axis.
  • the fifth magnetoresistance effect element 211 and the seventh magnetoresistance effect element 221 are adjacent to each other in the Y-axis direction.
  • the sixth magnetoresistance effect element 212 and the eighth magnetoresistance effect element 222 are adjacent to each other in the Y-axis direction.
  • a bias magnetic field is applied from the bias magnet 5 to the fifth magnetoresistance effect element 211 and the seventh magnetoresistance effect element 221 along the positive direction of the Y-axis.
  • a bias magnetic field is applied from the bias magnet 5 to the sixth magnetoresistance effect element 212 and the eighth magnetoresistance effect element 222 along the negative direction of the Y-axis.
  • the magnetic sensor 100 further includes a first output terminal 1T, a second output terminal 2T, a third output terminal 3T, and a fourth output terminal 4T.
  • the first output terminal 1T outputs a first output signal from a connection point between the first magnetoresistance effect element 111 and the second magnetoresistance effect element 112.
  • the second output terminal 2T outputs a second output signal from a connection point between the third magnetoresistance effect element 121 and the fourth magnetoresistance effect element 122.
  • the third output terminal 3T outputs a third output signal from a connection point between the fifth magnetoresistance effect element 211 and the sixth magnetoresistance effect element 212.
  • the fourth output terminal 4T outputs a fourth output signal from a connection point between the seventh magnetoresistance effect element 221 and the eighth magnetoresistance effect element 222.
  • the first output signal is a -cos signal
  • the second output signal is a +cos signal
  • the third output signal is a +sine signal
  • the fourth output signal is a -sine signal.
  • the first output signal and the second output signal are in opposite phase
  • the third output signal and the fourth output signal are in opposite phase.
  • each of the first magnetoresistance effect element 111, the second magnetoresistance effect element 112, the third magnetoresistance effect element 121, the fourth magnetoresistance effect element 122, the fifth magnetoresistance effect element 211, the sixth magnetoresistance effect element 212, the seventh magnetoresistance effect element 221 and the eighth magnetoresistance effect element 222 may be referred to as a magnetoresistance effect element 300.
  • the magnetic sensor 100 includes multiple (eight) magnetoresistance effect elements 300.
  • the GMR film 72 further includes power supply terminals H10, H20 and reference terminals L10, L20.
  • the power supply terminals H10, H20 are high-potential side terminals electrically connected to the high-potential side electric circuit of the power supply.
  • the reference terminals L10, L20 are low-potential side terminals electrically connected to the low-potential side electric circuit (reference potential electric circuit) of the power supply.
  • the reference terminals L10, L20 are ground terminals electrically connected to the ground potential electric circuit.
  • the first end of the first magnetoresistance effect element 111 is electrically connected to the power supply terminal H10.
  • the second end of the first magnetoresistance effect element 111 is electrically connected to the first end of the second magnetoresistance effect element 112.
  • the second end of the second magnetoresistance effect element 112 is electrically connected to the reference terminal L20.
  • the first output terminal 1T is electrically connected to the connection point between the first magnetoresistance effect element 111 and the second magnetoresistance effect element 112.
  • the first end of the third magnetoresistance effect element 121 is electrically connected to the reference terminal L10.
  • the second end of the third magnetoresistance effect element 121 is electrically connected to the first end of the fourth magnetoresistance effect element 122.
  • the second end of the fourth magnetoresistance effect element 122 is electrically connected to the power supply terminal H20.
  • the second output terminal 2T is electrically connected to the connection point between the third magnetoresistance effect element 121 and the fourth magnetoresistance effect element 122.
  • the first end of the fifth magnetoresistance effect element 211 is electrically connected to the reference terminal L10.
  • the second end of the fifth magnetoresistance effect element 211 is electrically connected to the first end of the sixth magnetoresistance effect element 212.
  • the second end of the sixth magnetoresistance effect element 212 is electrically connected to the power supply terminal H10.
  • the third output terminal 3T is electrically connected to the connection point between the fifth magnetoresistance effect element 211 and the sixth magnetoresistance effect element 212.
  • a first end of the seventh magnetoresistance effect element 221 is electrically connected to the power supply terminal H20.
  • a second end of the seventh magnetoresistance effect element 221 is electrically connected to a first end of the eighth magnetoresistance effect element 222.
  • a second end of the eighth magnetoresistance effect element 222 is electrically connected to the reference terminal L20.
  • a fourth output terminal 4T is electrically connected to the connection point between the seventh magnetoresistance effect element 221 and the eighth magnetoresistance effect element 222.
  • the first output terminal 1T, the second output terminal 2T, the third output terminal 3T, and the fourth output terminal 4T are electrically connected to the processing circuit 201.
  • FIG. 1 shows only the third output terminal 3T as being connected to the processing circuit 201.
  • the shape of the magnetoresistance effect element 300 is illustrated as a rectangle when viewed from the Z-axis direction. However, this shape is illustrated diagrammatically to show the orientation of the magnetoresistance effect element 300, and does not necessarily match the actual shape of the magnetoresistance effect element 300.
  • the electrical resistance value of the magnetoresistance effect element 300 changes depending on the magnitude of the applied magnetic field.
  • the magnetic sensor 100 outputs the change in the electrical resistance value of the magnetoresistance effect element 300 as a voltage signal.
  • the magnetoresistance effect element 300 is sensitive to magnetic fields in one direction (along the long side in FIG. 1) and is sensitive to magnetic fields in the other direction (along the short side in FIG. 1).
  • the sensitivity of the magnetoresistance effect element 300 is maximum to magnetic fields in the other direction.
  • the first magnetoresistance effect element 111, the second magnetoresistance effect element 112, the third magnetoresistance effect element 121, and the fourth magnetoresistance effect element 122 are arranged so as to be sensitive to magnetic fields along the X-axis and magnetic fields along the Y-axis.
  • the first magnetoresistance effect element 111, the second magnetoresistance effect element 112, the third magnetoresistance effect element 121, and the fourth magnetoresistance effect element 122 have the same resistance value change for a magnetic field along the positive direction of the X-axis and a magnetic field along the negative direction of the X-axis if the magnetic field magnitude is the same.
  • the first magnetoresistance effect element 111, the second magnetoresistance effect element 112, the third magnetoresistance effect element 121, and the fourth magnetoresistance effect element 122 have the same resistance value change for a magnetic field along the positive direction of the Y-axis and a magnetic field along the negative direction of the Y-axis if the magnetic field magnitude is the same.
  • the fifth magnetoresistance effect element 211, the sixth magnetoresistance effect element 212, the seventh magnetoresistance effect element 221, and the eighth magnetoresistance effect element 222 are arranged so as to be sensitive to magnetic fields along the X-axis and magnetic fields along the Y-axis.
  • the fifth magnetoresistance effect element 211, the sixth magnetoresistance effect element 212, the seventh magnetoresistance effect element 221, and the eighth magnetoresistance effect element 222 undergo the same resistance value change when the magnetic field is applied along the positive direction of the X-axis and when the magnetic field is applied along the negative direction of the X-axis, if the magnetic field magnitude is the same.
  • the fifth magnetoresistance effect element 211, the sixth magnetoresistance effect element 212, the seventh magnetoresistance effect element 221, and the eighth magnetoresistance effect element 222 undergo the same resistance value change when the magnetic field is applied along the positive direction of the Y-axis and when the magnetic field magnitude is the same when the magnetic field is applied along the negative direction of the Y-axis.
  • each magnetoresistance effect element 300 is arranged as follows. That is, the first magnetoresistance effect element 111 and the third magnetoresistance effect element 121 are arranged on the negative side of the Y-axis from the center. The second magnetoresistance effect element 112 and the fourth magnetoresistance effect element 122 are arranged on the positive side of the Y-axis from the center. The fifth magnetoresistance effect element 211 and the seventh magnetoresistance effect element 221 are arranged on the negative side of the X-axis from the center. The sixth magnetoresistance effect element 212 and the eighth magnetoresistance effect element 222 are arranged on the positive side of the X-axis from the center.
  • the magnetoresistance effect element 300 is, for example, a GMR (Giant Magneto Resistance) element. More specifically, the magnetoresistance effect element 300 is a CIP (current in plane) type GMR element.
  • the magnetoresistance effect element 300 has no sensitivity in a specific direction (for example, the Z-axis direction) and has isotropic sensitivity in directions intersecting the specific direction (for example, the X-axis direction and the Y-axis direction).
  • the bias magnet 5 applies a magnetic field (bias magnetic field) to each of the multiple (eight) magnetoresistance effect elements 300, the strength of which is half or less than the anisotropic magnetic field of each of the multiple magnetoresistance effect elements 300. This makes it possible to suppress distortion of the output waveform of each of the multiple magnetoresistance effect elements 300.
  • the thermal oxide film 73 covers the surface of the base material 74.
  • the thermal oxide film 73 is formed on the surface of the base material 74 by performing a heat treatment on the base material 74.
  • the base material 74 is a silicon substrate
  • the thermal oxide film 73 is a silicon oxide film.
  • the first protective film 71 covers the GMR film 72.
  • the first protective film 71 is made of, for example, a resin, a metal oxide such as Al 2 O 3 (alumina), or a metal nitride.
  • the processing circuit 201 includes, for example, a computer system having one or more processors and a memory.
  • the functions of the processing circuit 201 are realized by the processor of the computer system executing a program recorded in the memory of the computer system.
  • the program may be recorded in the memory, or may be provided via a telecommunication line such as the Internet, or may be recorded on a non-transitory recording medium such as a memory card and provided.
  • the processing circuit 201 can determine the direction of the magnetic field. Therefore, in the following, with reference to FIG. 3, it is described that the rotor 8 is fixed and the position of the magnetic sensor 100 changes in the order of positions L1, L2, L3, and L4. The magnetic sensor 100 rotates around the rotor 8, and the X-axis and Y-axis also rotate accordingly.
  • the bias magnetic field along the positive direction of the Y axis is applied to the fifth magnetoresistance effect element 211 and the seventh magnetoresistance effect element 221, the magnetic field of the rotor 8 and the bias magnetic field weaken each other. Therefore, when the magnetic sensor 100 is at position L1, the third output signal is maximum and the fourth output signal is minimum (see FIG. 6).
  • the phase difference between the second output signal and the third output signal is a rotation angle corresponding to 1/2 the width of the magnetic pole 80. In other words, the phase difference is 1/4 period. Therefore, if the third output signal is considered to be a sine wave, the second output signal corresponds to a cosine wave with respect to the third output signal.
  • the processing circuit 201 determines the rotation angle of the magnetic sensor 100 (actually, the rotor 8) based on the first output signal, the second output signal, the third output signal, and the fourth output signal. Specifically, the processing circuit 201 generates a first differential signal, which is a differential signal between the first output signal and the second output signal. The waveform of the first differential signal is a waveform with the amplitude doubled in the first output signal. The processing circuit 201 also generates a second differential signal, which is a differential signal between the third output signal and the fourth output signal. The waveform of the second differential signal is a waveform with the amplitude doubled in the third output signal.
  • the processing circuit 201 determines a common phase for the first differential signal as a cosine wave and the second differential signal as a sine wave based on the first differential signal and the second differential signal. Each time the phase changes by one period, the processing circuit 201 can determine that the magnetic sensor 100 (actually, the rotor 8) has rotated by a rotation angle equivalent to one period. Since the first differential signal and the second differential signal have twice the amplitude compared to the first output signal and the third output signal, the direction of the magnetic field and the rotation angle of the magnetic sensor 100 (actually, the rotor 8) can be determined with greater accuracy.
  • the magnetic detection system 200 may also include a sensor (e.g., an optical sensor or a magnetic sensor) for detecting the starting point of the movement (rotation) of the measurement object (rotor 8).
  • a sensor e.g., an optical sensor or a magnetic sensor
  • the sensor generates a predetermined output signal every time the measurement object rotates once, and the processing circuit 201 detects the starting point based on the predetermined output signal.
  • Fig. 7 is a layout diagram showing an example of arrangement of the magnetoresistance effect elements 300 of the magnetic sensor 100 according to the embodiment.
  • each of the first magnetoresistance effect element 111, the second magnetoresistance effect element 112, the third magnetoresistance effect element 121, and the fourth magnetoresistance effect element 122 has a magnetoresistance pattern portion 31 formed in a meandering shape.
  • each of the fifth magnetoresistance effect element 211, the sixth magnetoresistance effect element 212, the seventh magnetoresistance effect element 221, and the eighth magnetoresistance effect element 222 has a magnetoresistance pattern portion 32 formed in a meandering shape.
  • the magnetoresistance pattern portion 31 of the first magnetoresistance effect element 111 includes a plurality of pattern portions 311 (four in the illustrated example). Each of the plurality of pattern portions 311 protrudes along the second direction D2. The plurality of pattern portions 311 are aligned along the first direction D1.
  • the magnetoresistance pattern portion 31 of the second magnetoresistance effect element 112 includes a plurality of pattern portions 311 (four in the illustrated example). Each of the plurality of pattern portions 311 protrudes along the second direction D2. The plurality of pattern portions 311 are aligned along the first direction D1.
  • the magnetoresistance pattern portion 31 of the fourth magnetoresistance effect element 122 includes a plurality of pattern portions 311 (four in the illustrated example). Each of the plurality of pattern portions 311 protrudes along the second direction D2. The plurality of pattern portions 311 are aligned along the first direction D1.
  • the magnetoresistance pattern portion 32 of the fifth magnetoresistance effect element 211 includes a plurality of pattern portions 321 (four in the illustrated example). Each of the plurality of pattern portions 321 protrudes along the first direction D1. The plurality of pattern portions 321 are arranged along the second direction D2.
  • the magnetoresistance pattern portion 32 of the seventh magnetoresistance effect element 221 includes a plurality of pattern portions 321 (four in the illustrated example). Each of the plurality of pattern portions 321 protrudes along the first direction D1. The plurality of pattern portions 321 are arranged along the second direction D2.
  • the first end of the magnetoresistance pattern portion 31 of the first magnetoresistance effect element 111 is electrically connected to the power supply terminal H10 via the wiring pattern portion 41.
  • the second end of the magnetoresistance pattern portion 31 of the first magnetoresistance effect element 111 is electrically connected to the first output terminal 1T via the wiring pattern portion 49.
  • the first end of the magnetoresistance pattern portion 31 of the second magnetoresistance effect element 112 is electrically connected to the reference terminal L20 via the wiring pattern portion 47.
  • the second end of the magnetoresistance pattern portion 31 of the second magnetoresistance effect element 112 is electrically connected to the first output terminal 1T via the wiring pattern portion 49.
  • the first end of the magnetoresistance pattern portion 31 of the third magnetoresistance effect element 121 is electrically connected to the reference terminal L10 via the wiring pattern portion 45.
  • the second end of the magnetoresistance pattern portion 31 of the third magnetoresistance effect element 121 is electrically connected to the second output terminal 2T via the wiring pattern portion 55.
  • the first end of the magnetoresistance pattern portion 31 of the fourth magnetoresistance effect element 122 is electrically connected to the power supply terminal H20 via the wiring pattern portion 43.
  • the second end of the magnetoresistance pattern portion 31 of the fourth magnetoresistance effect element 122 is electrically connected to the second output terminal 2T via the wiring pattern portion 55.
  • the first end of the magnetoresistance pattern portion 32 of the fifth magnetoresistance effect element 211 is electrically connected to the reference terminal L10 via the wiring pattern portion 46.
  • the second end of the magnetoresistance pattern portion 31 of the fifth magnetoresistance effect element 211 is electrically connected to the third output terminal 3T via the wiring pattern portion 52.
  • the first end of the magnetoresistance pattern portion 32 of the sixth magnetoresistance effect element 212 is electrically connected to the power supply terminal H10 via the wiring pattern portion 42.
  • the second end of the magnetoresistance pattern portion 32 of the sixth magnetoresistance effect element 212 is electrically connected to the third output terminal 3T via the wiring pattern portion 51.
  • the first end of the magnetoresistance pattern portion 32 of the seventh magnetoresistance effect element 221 is electrically connected to the power supply terminal H20 via the wiring pattern portion 44.
  • the second end of the magnetoresistance pattern portion 32 of the seventh magnetoresistance effect element 221 is electrically connected to the fourth output terminal 4T via the wiring pattern portion 54.
  • the first end of the magnetoresistance pattern portion 32 of the eighth magnetoresistance effect element 222 is electrically connected to the reference terminal L20 via the wiring pattern portion 48.
  • the second end of the magnetoresistance pattern portion 32 of the eighth magnetoresistance effect element 222 is electrically connected to the fourth output terminal 4T via the wiring pattern portion 53.
  • the magnetoresistance pattern portion 31 of the first magnetoresistance effect element 111 and the magnetoresistance pattern portion 31 of the third magnetoresistance effect element 121 are linearly symmetrical with respect to the center line L1 in the second direction D2. More specifically, each of the multiple pattern portions 311 in the magnetoresistance pattern portion 31 of the first magnetoresistance effect element 111 is disposed between two adjacent pattern portions 311 of the multiple pattern portions 311 in the magnetoresistance pattern portion 31 of the third magnetoresistance effect element 121.
  • each of the multiple pattern portions 311 in the magnetoresistance pattern portion 31 of the fourth magnetoresistance effect element 122 is disposed between two adjacent pattern portions 311 of the multiple pattern portions 311 in the magnetoresistance pattern portion 31 of the second magnetoresistance effect element 112.
  • the multiple pattern portions 311 in the magnetoresistive pattern portion 31 of the second magnetoresistive element 112 and the multiple pattern portions 311 in the magnetoresistive pattern portion 31 of the fourth magnetoresistive element 122 are arranged alternately along the first direction D1. That is, the magnetoresistive pattern portion 31 of the second magnetoresistive element 112 and the magnetoresistive pattern portion 31 of the fourth magnetoresistive element 122 overlap when viewed in a plan view from the first direction D1.
  • a magnetic field difference also occurs between the third series circuit 21 consisting of the fifth magnetoresistance effect element 211 and the sixth magnetoresistance effect element 212, and the fourth series circuit 22 consisting of the seventh magnetoresistance effect element 221 and the eighth magnetoresistance effect element 222.
  • the accuracy of magnetic field detection by the magnetic sensor 100a may decrease.
  • the first magnetoresistance effect element 111 and the third magnetoresistance effect element 121 overlap in a plan view from the first direction D1, and the two can be considered to be located at approximately the same position (see FIG. 8). Furthermore, of the four maximum points P1, the maximum points P1 corresponding to the first magnetoresistance effect element 111 and the third magnetoresistance effect element 121 overlap with both the first magnetoresistance effect element 111 and the third magnetoresistance effect element 121 in a plan view from a direction perpendicular to both the first direction D1 and the second direction D2, as shown in FIG. 8.
  • the sixth magnetoresistance effect element 212 and the eighth magnetoresistance effect element 222 overlap in a planar view from the second direction D2, and can be considered to be located at approximately the same position (see FIG. 8). Furthermore, of the four maximum points P1, the maximum points P1 corresponding to the sixth magnetoresistance effect element 212 and the eighth magnetoresistance effect element 222 overlap with both the sixth magnetoresistance effect element 212 and the eighth magnetoresistance effect element 222 in a planar view from a direction perpendicular to both the first direction D1 and the second direction D2, as shown in FIG. 8.
  • the magnetic field applied to the third series circuit 21 consisting of the fifth magnetoresistance effect element 211 and the sixth magnetoresistance effect element 212 can be made equal to the magnetic field applied to the fourth series circuit 22 consisting of the seventh magnetoresistance effect element 221 and the eighth magnetoresistance effect element 222.
  • the magnetic sensor 100 according to the embodiment it is possible to suppress a decrease in the detection accuracy of the magnetic field by the magnetic sensor 100.
  • the rotor magnetic field in the X-axis direction applied by the rotor 8 is defined as H Rx
  • the rotor magnetic field in the Y-axis direction applied by the rotor 8 is defined as H Ry
  • the bias magnetic field in the X-axis direction applied by the bias magnet 5 is defined as H Bx
  • the bias magnetic field in the Y-axis direction applied by the bias magnet 5 is defined as H By .
  • the magnetic field H applied to each magnetoresistance effect element 300 is given by equation (1).
  • the rotor magnetic field H R5x in the X-axis direction applied to the fifth magnetoresistance effect element 211, the rotor magnetic field H R5y in the Y-axis direction applied to the fifth magnetoresistance effect element 211, the rotor magnetic field H R6x in the X-axis direction applied to the sixth magnetoresistance effect element 212, and the rotor magnetic field H R6y in the Y-axis direction applied to the sixth magnetoresistance effect element 212 are expressed by the following formulas (2) to (5). Note that u 5 and u 6 in the formulas (2) to (5) are amplitudes.
  • each magnetoresistance effect element 300 is approximated by a straight line with a slope of a1 and an intercept of b1
  • the resistance value R5 of the fifth magnetoresistance effect element 211 and the resistance value R6 of the sixth magnetoresistance effect element 212 will be expressed by equations (10) and (11).
  • the potential of the power supply terminal H10 is Vcc
  • the potential of the connection point between the fifth magnetoresistance effect element 211 and the sixth magnetoresistance effect element 212 that is, the potential of the third output signal output from the third output terminal 3T
  • V1 the potential of the third output signal output from the third output terminal 3T
  • the magnetoresistance pattern portion 31 of the first magnetoresistance effect element 111 and the magnetoresistance pattern portion 31 of the third magnetoresistance effect element 121 overlap in a plan view from the first direction D1. More specifically, the plurality of pattern portions 311 in the magnetoresistance pattern portion 31 of the first magnetoresistance effect element 111 and the plurality of pattern portions 311 in the magnetoresistance pattern portion 31 of the third magnetoresistance effect element 121 are alternately arranged along the first direction D1. This makes it possible to make the bias magnetic field applied to the first magnetoresistance effect element 111 and the bias magnetic field applied to the third magnetoresistance effect element 121 almost the same.
  • the magnetoresistance pattern portion 31 of the second magnetoresistance effect element 112 and the magnetoresistance pattern portion 31 of the fourth magnetoresistance effect element 122 overlap in a plan view from the first direction D1. More specifically, the plurality of pattern portions 311 in the magnetoresistive pattern portion 31 of the second magnetoresistive element 112 and the plurality of pattern portions 311 in the magnetoresistive pattern portion 31 of the fourth magnetoresistive element 122 are alternately arranged along the first direction D1. This makes it possible to make the bias magnetic field applied to the second magnetoresistive element 112 and the bias magnetic field applied to the fourth magnetoresistive element 122 almost the same.
  • the magnetoresistive pattern portion 32 of the fifth magnetoresistive element 211 and the magnetoresistive pattern portion 32 of the seventh magnetoresistive element 221 overlap in a plan view from the second direction D2. More specifically, the plurality of pattern portions 321 in the magnetoresistive pattern portion 32 of the fifth magnetoresistive element 211 and the plurality of pattern portions 321 in the magnetoresistive pattern portion 32 of the seventh magnetoresistive element 221 are alternately arranged along the second direction D2. This allows the bias magnetic field applied to the fifth magnetoresistance element 211 and the bias magnetic field applied to the seventh magnetoresistance element 221 to be substantially the same.
  • the first series circuit (11) includes a first magnetoresistance effect element (111) and a second magnetoresistance effect element (112) that are connected in series to each other and detect a magnetic field along the X-axis.
  • the second series circuit (12) includes a third magnetoresistance effect element (121) and a fourth magnetoresistance effect element (122) that are connected in series to each other and detect a magnetic field along the X-axis.
  • the first series circuit (11) and the second series circuit (12) are connected in parallel to each other.
  • the second full-bridge circuit (2) includes a third series circuit (21) and a fourth series circuit (22).
  • the third series circuit (21) includes a fifth magnetoresistance effect element (211) and a sixth magnetoresistance effect element (212) that are connected in series to each other and detect a magnetic field along the Y-axis.
  • the fourth series circuit (22) includes a seventh magnetoresistance effect element (221) and an eighth magnetoresistance effect element (222) that are connected in series to each other and detect a magnetic field along the Y-axis.
  • the third series circuit (21) and the fourth series circuit (22) are connected in parallel.
  • a bias magnetic field is applied to the first magnetoresistance effect element (111) and the third magnetoresistance effect element (121) along the positive direction of the X-axis.
  • a bias magnetic field is applied to the second magnetoresistance effect element (112) and the fourth magnetoresistance effect element (122) along the negative direction of the X-axis.
  • a bias magnetic field is applied to the fifth magnetoresistance effect element (211) and the seventh magnetoresistance effect element (221) along the positive direction of the Y-axis.
  • a bias magnetic field is applied to the sixth magnetoresistance effect element (212) and the eighth magnetoresistance effect element (222) along the negative direction of the Y-axis.
  • Each of the first magnetoresistance effect element (111), the second magnetoresistance effect element (112), the third magnetoresistance effect element (121), the fourth magnetoresistance effect element (122), the fifth magnetoresistance effect element (211), the sixth magnetoresistance effect element (212), the seventh magnetoresistance effect element (221) and the eighth magnetoresistance effect element (222) has a magnetoresistance pattern portion (31, 32) formed in a meandering shape.
  • the magnetoresistive pattern portion (31) of the first magnetoresistive effect element (111), the magnetoresistive pattern portion (31) of the second magnetoresistive effect element (112), the magnetoresistive pattern portion (31) of the third magnetoresistive effect element (121) and the magnetoresistive pattern portion (31) of the fourth magnetoresistive effect element (122) each have a plurality of pattern portions (311) protruding toward the second direction (D2) and arranged along the first direction (D1).
  • This aspect makes it possible to further suppress the deterioration of the detection accuracy of the magnetic sensor (100).
  • the magnetic sensor (100) further includes a first output terminal (1T), a second output terminal (2T), a third output terminal (3T), and a fourth output terminal (4T) in the first or second aspect.
  • the first output terminal (1T) outputs a first output signal from a connection point between the first magnetoresistance effect element (111) and the second magnetoresistance effect element (112).
  • the second output terminal (2T) outputs a second output signal of opposite phase to the first output signal from a connection point between the third magnetoresistance effect element (121) and the fourth magnetoresistance effect element (122).
  • the third output terminal (3T) outputs a third output signal from a connection point between the fifth magnetoresistance effect element (211) and the sixth magnetoresistance effect element (212).
  • the fourth output terminal (4T) outputs a fourth output signal that is in phase opposite to the third output signal from the connection point between the seventh magnetoresistance effect element (221) and the eighth magnetoresistance effect element (222).
  • At least one bias magnet (5) includes a single bias magnet (5) that generates a bias magnetic field along the positive direction of the X-axis and a bias magnetic field along the negative direction of the X-axis.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Measuring Magnetic Variables (AREA)

Abstract

La présente invention supprime une réduction d'un champ magnétique de détection. Une partie de motif de magnétorésistance (31) d'un premier élément à effet de magnétorésistance (111) et la partie de motif de magnétorésistance (31) d'un troisième élément à effet de magnétorésistance (121) se chevauchent dans une vue en plan depuis une première direction (D1). La partie de motif de magnétorésistance (31) d'un deuxième élément à effet de magnétorésistance (112) et la partie de motif de magnétorésistance (31) d'un quatrième élément à effet de magnétorésistance (122) se chevauchent dans une vue en plan depuis la première direction (D1). Une partie de motif de magnétorésistance (32) d'un cinquième élément à effet de magnétorésistance (211) et la partie de motif de magnétorésistance (32) d'un septième élément à effet de magnétorésistance (221) se chevauchent dans une vue en plan depuis une seconde direction (D2). La partie de motif de magnétorésistance (32) d'un sixième élément à effet de magnétorésistance (212) et la partie de motif de magnétorésistance (32) d'un huitième élément à effet de magnétorésistance (222) se chevauchent dans une vue en plan depuis la seconde direction (D2).
PCT/JP2024/043815 2023-12-29 2024-12-11 Capteur magnétique et système de détection magnétique Pending WO2025142488A1 (fr)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012037463A (ja) * 2010-08-11 2012-02-23 Alps Electric Co Ltd 磁気センサ
JP2018077149A (ja) * 2016-11-10 2018-05-17 浜松光電株式会社 磁気センサ
JP2018179776A (ja) * 2017-04-13 2018-11-15 大同特殊鋼株式会社 薄膜磁気センサ
JP2020197394A (ja) * 2019-05-31 2020-12-10 浜松光電株式会社 磁気センサ
JP2022176783A (ja) * 2021-05-17 2022-11-30 パナソニックＩｐマネジメント株式会社 磁気センサ及び磁気検知システム

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012037463A (ja) * 2010-08-11 2012-02-23 Alps Electric Co Ltd 磁気センサ
JP2018077149A (ja) * 2016-11-10 2018-05-17 浜松光電株式会社 磁気センサ
JP2018179776A (ja) * 2017-04-13 2018-11-15 大同特殊鋼株式会社 薄膜磁気センサ
JP2020197394A (ja) * 2019-05-31 2020-12-10 浜松光電株式会社 磁気センサ
JP2022176783A (ja) * 2021-05-17 2022-11-30 パナソニックＩｐマネジメント株式会社 磁気センサ及び磁気検知システム

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