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WO2025141772A1 - Structural body - Google Patents

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Publication number
WO2025141772A1
WO2025141772A1 PCT/JP2023/046955 JP2023046955W WO2025141772A1 WO 2025141772 A1 WO2025141772 A1 WO 2025141772A1 JP 2023046955 W JP2023046955 W JP 2023046955W WO 2025141772 A1 WO2025141772 A1 WO 2025141772A1
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Prior art keywords
laminate
self
assembly
sacrificial layer
thin film
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PCT/JP2023/046955
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French (fr)
Japanese (ja)
Inventor
東一郎 後藤
洸児 酒井
陽介 水野
真澄 山口
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NTT Inc
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Nippon Telegraph and Telephone Corp
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Priority to PCT/JP2023/046955 priority Critical patent/WO2025141772A1/en
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B1/00Devices without movable or flexible elements, e.g. microcapillary devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate

Definitions

  • the present invention relates to a structure having a laminate capable of self-assembly.
  • Micro-three-dimensional shapes using so-called self-assembly in which thin films patterned on a substrate spontaneously assemble into three-dimensional shapes using tension or stress, are being applied to the fabrication of three-dimensional electrodes that contain biological tissues such as cells and nerve bundles and measure their electrical activity.
  • Micro-three-dimensional shapes have attracted attention because they make it possible to deform thin films into a variety of shapes when contacting three-dimensional electrodes to conform to the shapes of flexible structures with curved surfaces such as cells and biological tissues.
  • the self-assembly technique which forms a thin-film pattern consisting of graphene and a thin polymer film on a sacrificial layer and utilizes the stress released when the sacrificial layer is dissolved, can be used for cell culture and the evaluation of its electrical properties, because the thin-film material used is low-cost, highly biocompatible, and easy to process into various patterns (Non-Patent Document 1).
  • a rectangular thin film pattern 10 (L 1 ⁇ L 2 , L 1 >L 2 ) (FIG. 8A) self-assembles into a cylindrical shape, but unless a skilled operation such as using a heat-sensitive thin film and temperature control is performed (Non-Patent Document 1), in self-assembly using the dissolution of a sacrificial layer, the rectangular thin film pattern 10 is almost always cylindrical in the long axis direction (cylindrical with the long side direction as the axial direction) (FIG. 8B).
  • Self-assembly gradually begins from the melted part of the sacrificial layer, in this case the edge part of the rectangle, but since the long side has a larger melting area than the short side, bending due to self-assembly is preferentially induced from the long side.
  • the rectangular thin film pattern 10 in the short axis direction (cylindrical with the short side direction as the axial direction) (FIG. 8C).
  • Non-Patent Document 2 discloses a technology for controlling the self-assembly direction of such thin films.
  • Non-Patent Document 2 discloses a technology in which one of two gel thin film layers contains alginate chains, and the direction of self-assembly is controlled by the concentration of added cations. This technology is able to control the direction of self-assembly, but it is intended for sizes of mm or more, and since the gel thin film self-assembles in a way that requires adjustment of the concentration of added cations, it is disadvantageous in terms of drying, durability, and operability. To self-assemble any thin film other than a gel thin film, it is necessary to develop a method other than the prior art.
  • the sacrificial layer 102 is formed on one of the main surfaces of the substrate.
  • the sacrificial layer 102 is made of a material that can be removed by a predetermined method without damaging the thin film layers and the biological tissue.
  • the material of the sacrificial layer 102 is not particularly limited, but in this embodiment, calcium alginate is used as an example.
  • a sodium alginate solution is filtered through a hydrophilic filter, spin-coated onto the solid substrate 101, and immersed in a calcium chloride solution to obtain a gelled calcium alginate thin film.
  • the calcium alginate thin film can be removed by adding EDTA (ethylenediaminetetraacetic acid) to chelate the calcium ions in the calcium alginate with EDTA.
  • EDTA ethylenediaminetetraacetic acid
  • the conductive layer 104 is preferably a two-dimensional atomic layer composed of atoms aligned along one plane, such as graphene or MoS2 .
  • the dielectric layer 105 can be composed of, for example, parylene (polyparaxylylene), a type of polymer.
  • the outer periphery of the laminate 103 has a curved region R1 that curves as the laminate 103 self-assembles, and a non-curved region R2 that does not curve.
  • the curved region R1 is a region in which the dissolution of the sacrificial layer 102 progresses relatively quickly during self-assembly, causing the laminate to curve.
  • the non-curved region R2 is a region in which the dissolution of the sacrificial layer 102 progresses relatively slowly, and the curvature of the non-curved region R2 is suppressed by the curved region R1 , which curves first.
  • the non-curved region R2 is a region along any side of the rectangle.
  • a case is illustrated in which the laminate 103 is rectangular in plan view and the non-curved region is a region along a short side of the rectangle (short side portion).
  • the laminate 103 has a plurality of through holes (hole patterns) 106 arranged along a non-curved region R 2 (here, a region near the short side) of the outer periphery and penetrating in the lamination direction L.
  • the shape of the through holes 106 in a plan view from the lamination direction L is not particularly limited.
  • the size (inner diameter) of the through holes 106 in the plan view is preferably one tenth (1/10) or less of the size (maximum diameter) of the laminate 103.
  • the length (inner diameter) of the long side of the through holes 106 is preferably one tenth or less of the length of the long side (maximum diameter) of the laminate.
  • the outer periphery of the laminate 103 is a region having a predetermined width (distance) D from the outer periphery edge to the inside.
  • This width D is preferably one fifth (1/5) or less of the length L1 (here, the length of the long side) of the laminate 103.
  • the through holes 106 are preferably formed within this outer periphery.
  • the non-curved region R2 is a region having a width from the outer periphery edge of the laminate 103 to the inside, which is 1/5 or less of the length of the laminate 103.
  • the structure 100 can be fabricated by the following steps.
  • the substrate 101 is cleaned with piranha, oxygen plasma, etc. If it is not possible to treat it with a strong acid such as piranha, it may be treated with an organic solvent such as ethanol, acetone, IPA, etc.
  • a sacrificial layer 102 is formed on one of the main surfaces 101a of the cleaned substrate. At this time, the sacrificial layer 102 may be formed on the entire surface of the substrate 101, or the sacrificial layer 102 may be patterned in a predetermined region of the substrate 101 by using photolithography or the like in combination.
  • the sacrificial layer 102 is made of metal or calcium alginate, it can be used as the sacrificial layer even after the photoresist pattern is removed with acetone.
  • a two-dimensional atomic thin film is transferred as the conductive layer 104.
  • the two-dimensional atomic layer may be an atomic layer peeled off from a two-dimensional crystal and transferred onto the substrate, or an atomic layer grown by CVD may be transferred.
  • the two-dimensional atomic layer is preferably a monolayer to 100 atomic layers, with a thickness of about 0.1 nm to 50 nm.
  • a dielectric layer 105 is formed.
  • a parylene polymer grown by CVD from a dimer is formed. Parylene can be easily formed into a film by vapor deposition, and is strongly bonded to a two-dimensional thin film of a ⁇ -conjugated system such as graphene by ⁇ - ⁇ conjugation. Therefore, it is possible to prevent the formed dielectric layer 105 from being easily peeled off from the two-dimensional thin film of a ⁇ -conjugated system.
  • the thickness of the dielectric layer 105 is preferably 100 nm to 3000 nm.
  • resist 107 is spin-coated onto laminate 103.
  • Resist 107 may be either positive or negative, but it is made so that resist 107 after development is formed in the areas where it is desired to leave a pattern. It is preferable that resist 107 forming the pattern has a film thickness that is sufficient to remain without being removed even after the subsequent dry etching process. Note that although the thin film pattern is rectangular here, any pattern may be used depending on the purpose.
  • the hole pattern (through hole 106) at the end of the thin film pattern (laminate 103) that controls the direction of self-assembly is also patterned at this stage, but the patterning of the thin film pattern and the hole pattern may be performed separately.
  • hole patterns are provided on both short sides of the rectangular pattern. In this case, both long sides become curved sections and both short sides become non-curved areas.
  • hole patterns are provided on both opposing ends that intersect with the axial direction of the cylinder.
  • the thin film layer outside the pattern is removed by dry etching as shown in FIG. 3A.
  • the constituent materials of the sacrificial layer, the two-dimensional atomic layer, and the dielectric layer are calcium alginate, graphene, and parylene, respectively
  • the thin film layer outside the pattern can be removed by oxygen plasma treatment.
  • oxygen plasma treatment Other conditions may be used depending on the purpose.
  • a thin film material that cannot be removed by oxygen plasma treatment it can be removed by physical etching such as ion beam. After this dry etching, the structure 100 of this embodiment is obtained as shown in FIGS. 1A, 1B, and 1C.
  • Example 1 According to the above embodiment, self-assembly of a laminate of rectangular thin film patterns having through holes was carried out.
  • Figure 5A is a photograph of the laminate formed before self-assembly (before the sacrificial layer was dissolved). The conditions were the same as in Example 1, except that no through holes were provided.
  • Figure 5B is a photograph of the laminate after self-assembly (after dissolving the sacrificial layer). When the sacrificial layer was dissolved under the same conditions as in Example 1, the laminate self-assembled into a single roll shape with the long side direction as the axial direction.
  • Figure 6A is a photograph of the laminate formed before self-assembly (before the sacrificial layer was dissolved).
  • the conditions were the same as in Example 1, except that a laminate with a square thin film pattern (200 ⁇ m ⁇ 200 ⁇ m) was used and through holes were formed along two opposing sides selected from the four sides.
  • Figure 6B is a photograph of the laminate after self-assembly (after dissolving the sacrificial layer). When the sacrificial layer was dissolved under the same conditions as in Example 1, the laminate self-assembled into a single roll shape with the axial direction aligned along the two selected sides.
  • Figure 7A is a photograph of the laminate formed before self-assembly (before the sacrificial layer was dissolved). The conditions were the same as in Example 2, except that no through holes were provided.
  • Figure 7B is a photograph of the laminate after self-assembly (after dissolving the sacrificial layer). When the sacrificial layer was dissolved under the same conditions as in Example 2, the laminate curved in a complex manner in random directions.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Laminated Bodies (AREA)

Abstract

A structural body (100) according to the present invention has a structure capable of self assembly, said structural body comprising: a substrate (101); a sacrificial layer which is formed on one main surface of the substrate; and a laminate (103) which is formed on the sacrificial layer and which is obtained by laminating a conductor layer and a dielectric layer, wherein an outer peripheral part of the laminate (103) has a bending region (R1) that bends along with self assembly and a non-bending region (R2) that does not bend, and the laminate (103) has a plurality of through holes (106) that are arranged along the non-bending region (R2) of the outer peripheral part and that pass therethrough in the lamination direction.

Description

構造体structure

 本発明は、自己組立が可能な積層体を備えた構造体に関する。 The present invention relates to a structure having a laminate capable of self-assembly.

 基板上にパターニングした薄膜を、張力や応力により自発的に立体形状に組立する、いわゆる自己組立を用いた微小立体形状は、細胞や神経束などの生体組織を包含して、その電気活動を計測する立体電極の作製技術に応用されている。微小立体形状は、細胞や生体組織のような曲面を有する柔軟な構造体の形状に沿って立体電極を接触させる上で、薄膜を多様な形状で変形することが可能な点で注目されている。  Micro-three-dimensional shapes using so-called self-assembly, in which thin films patterned on a substrate spontaneously assemble into three-dimensional shapes using tension or stress, are being applied to the fabrication of three-dimensional electrodes that contain biological tissues such as cells and nerve bundles and measure their electrical activity. Micro-three-dimensional shapes have attracted attention because they make it possible to deform thin films into a variety of shapes when contacting three-dimensional electrodes to conform to the shapes of flexible structures with curved surfaces such as cells and biological tissues.

 特にグラフェンと高分子薄膜から成る薄膜パタンを犠牲層の上に形成し、犠牲層溶解時に解放される応力を利用した自己組立技術は、用いる薄膜材料が低価格かつ高い生体適合性を有し、様々なパタンに加工が容易であるため、細胞培養やその電気的特性の評価などに利用可能である(非特許文献1)。 In particular, the self-assembly technique, which forms a thin-film pattern consisting of graphene and a thin polymer film on a sacrificial layer and utilizes the stress released when the sacrificial layer is dissolved, can be used for cell culture and the evaluation of its electrical properties, because the thin-film material used is low-cost, highly biocompatible, and easy to process into various patterns (Non-Patent Document 1).

 しかし、従来技術では自己組立の方向制御が難しいという課題がある。例えば、長方形の薄膜パタン10(L×L、L>L)(図8A)は円筒状に自己組立するが、熱感応薄膜と温度制御を用いるなどの技巧的な操作をしない限り(非特許文献1)、犠牲層の溶解を利用した自己組立では、長方形薄膜パタン10は、長軸方向に円筒化(長辺方向を軸方向として円筒化)する場合がほとんどである(図8B)。犠牲層の溶解した部分、ここでは長方形の縁の部分から徐々に自己組立てが開始されるが、長辺の方が短辺よりも溶解する面積が大きいために、優先的に長辺から自己組立てによる屈曲が誘導される。しかし、長方形薄膜パタン10を短軸方向に曲げる(短辺方向を軸方向として円筒化する)必要のあるケースも存在する(図8C)。 However, in the conventional technology, there is a problem that it is difficult to control the direction of self-assembly. For example, a rectangular thin film pattern 10 (L 1 ×L 2 , L 1 >L 2 ) (FIG. 8A) self-assembles into a cylindrical shape, but unless a skilled operation such as using a heat-sensitive thin film and temperature control is performed (Non-Patent Document 1), in self-assembly using the dissolution of a sacrificial layer, the rectangular thin film pattern 10 is almost always cylindrical in the long axis direction (cylindrical with the long side direction as the axial direction) (FIG. 8B). Self-assembly gradually begins from the melted part of the sacrificial layer, in this case the edge part of the rectangle, but since the long side has a larger melting area than the short side, bending due to self-assembly is preferentially induced from the long side. However, there are also cases where it is necessary to bend the rectangular thin film pattern 10 in the short axis direction (cylindrical with the short side direction as the axial direction) (FIG. 8C).

 一例として、長方形薄膜パタン10を、ファイバ状の生体組織11に巻き付けることを考慮すると、長軸方向の円筒化では巻き付けに不都合である(図9A)。ファイバを巻き付けるように長方形薄膜パタンを自己組立する場合、組立方向が短軸方向の円筒化であることが好ましい(図9B)。なぜなら、長軸方向の円筒化でファイバを巻き付けようとすると、巻き付けに必要な長さ(短辺)よりも長い辺(長辺)が必要になり、結果として大面積の薄膜が必要になる。薄膜面積が広くなると、それだけ測定ノイズや薄膜の損傷のリスクが懸念されるので、長方形薄膜が短軸方向に自己組立して得た円筒薄膜により、細線と必要最小限の面積で接触した電気測定が好ましい。 As an example, when considering wrapping a rectangular thin film pattern 10 around a fiber-like biological tissue 11, it is inconvenient to wrap it in a cylindrical shape in the long axis direction (Figure 9A). When self-assembling a rectangular thin film pattern as if wrapping a fiber, it is preferable to assemble it in a cylindrical shape in the short axis direction (Figure 9B). This is because wrapping a fiber in a cylindrical shape in the long axis direction requires a side (long side) longer than the length (short side) required for wrapping, resulting in a thin film with a large area. The larger the thin film area, the greater the risk of measurement noise and damage to the thin film, so it is preferable to perform electrical measurements in which the rectangular thin film self-assembles in the short axis direction to form a cylindrical thin film that comes into contact with the thin wire over the minimum necessary area.

 しかし先述のとおり、長方形薄膜パタンは長軸方向に自己組立した円筒になりやすく、このままでは生体の電気計測は難しい。長方形ではなく正方形パタンを利用することも考えられるが、正方形パタンは円筒に自己組立する確率が低く、このままでは利用できない。以上のように、単純な四角形薄膜パタンの円筒化だけでも、円筒化方向の制御は試料の評価や微小試料作製の上で重要になってくる。 However, as mentioned above, rectangular thin film patterns tend to self-assemble into cylinders along the long axis, making electrical measurements in living organisms difficult in this state. It is possible to use a square pattern instead of a rectangle, but a square pattern has a low probability of self-assembling into a cylinder and cannot be used as is. As described above, even when simply forming a cylinder from a rectangular thin film pattern, control of the direction of cylindrical formation becomes important for sample evaluation and micro-sample creation.

 このような薄膜の自己組立方向の制御として、非特許文献2の技術が開示されている。非特許文献2では、二つのゲル薄膜層のうち、片方がアルギン酸鎖を含み、加えるカチオン濃度により自己組立の方向を制御する技術を開示している。この技術は自己組立の方向を制御できているが、mm以上のサイズを対象としており、添加するカチオン濃度の調整が必要なゲル薄膜が自己組立するので、乾燥や耐久性、操作性において不利である。ゲル薄膜以外の任意の薄膜を自己組立するには、先行技術以外の手法を開発する必要がある。 Non-Patent Document 2 discloses a technology for controlling the self-assembly direction of such thin films. Non-Patent Document 2 discloses a technology in which one of two gel thin film layers contains alginate chains, and the direction of self-assembly is controlled by the concentration of added cations. This technology is able to control the direction of self-assembly, but it is intended for sizes of mm or more, and since the gel thin film self-assembles in a way that requires adjustment of the concentration of added cations, it is disadvantageous in terms of drying, durability, and operability. To self-assemble any thin film other than a gel thin film, it is necessary to develop a method other than the prior art.

S. Chen et al.,“Kirigami/origami: unfolding the new regime of advanced 3D microfabrication/nanofabrication with “folding” ” Light: Science & Applications (2020)S. Chen et al., “Kirigami/origami: unfolding the new regime of advanced 3D microfabrication/nanofabrication with “folding”” Light: Science & Applications (2020) J. C. Athas et al., “Cation-induced folding of alginate-bearing bilayer gels: an unusual example of spontaneous folding along the long axis” Soft Matter (2018) Vol.14 2735-2743.J. C. Athas et al., “Cation-induced folding of alginate-bearing bilayer gels: an unusual example of spontaneous folding along the long axis” Soft Matter (2018) Vol.14 2735-2743.

 本発明は上記事情に鑑みてなされたものであり、自己組立とその方向制御を可能とする構造体を提供することを目的とする。 The present invention was made in consideration of the above circumstances, and aims to provide a structure that allows for self-assembly and directional control.

 上記課題を解決するため、本発明は以下の手段を採用している。 To solve the above problems, the present invention adopts the following measures.

 本発明の一態様に係る構造体は、自己組立が可能な積層体を備えた構造体であって、基板と、基板の一方の主面に形成された犠牲層と、前記犠牲層の上に形成され、誘電体層と導電体層とを積層してなる積層体と、を備え、前記積層体の外周部は、前記自己組立にともなって湾曲する湾曲領域と、湾曲しない非湾曲領域とを有し、前記積層体は、前記外周部の前記非湾曲領域に沿って並び、積層方向に貫通する複数の貫通孔を有する。 The structure according to one aspect of the present invention is a structure having a laminate capable of self-assembly, comprising a substrate, a sacrificial layer formed on one main surface of the substrate, and a laminate formed on the sacrificial layer and comprising a dielectric layer and a conductive layer laminated thereon, the outer periphery of the laminate having a curved region that curves with the self-assembly and a non-curved region that does not curve, and the laminate has a number of through holes aligned along the non-curved region of the outer periphery and penetrating in the stacking direction.

 本発明によれば、自己組立とその方向制御を可能とする構造体を提供することができる。 The present invention provides a structure that allows for self-assembly and directional control.

本発明の一実施形態に係る構造体の断面図である。1 is a cross-sectional view of a structure according to one embodiment of the present invention. 同構造体の平面図である。FIG. 同構造体の斜視図である。FIG. 同構造体を構成する積層体の平面図である。FIG. 2 is a plan view of a laminate constituting the same structure. 同構造体の製造過程における断面図である。5A to 5C are cross-sectional views of the same structure during the manufacturing process. 同構造体の製造過程における平面図である。1A to 1C are plan views of the same structure during the manufacturing process. 実施例1で得られた積層体の自己組立前の写真である。1 is a photograph of the laminate obtained in Example 1 before self-assembly. 同積層体の自己組立後の写真である。13 is a photograph of the same laminate after self-assembly. 比較例1で得られた積層体の自己組立前の写真である。1 is a photograph of the laminate obtained in Comparative Example 1 before self-assembly. 同積層体の自己組立後の写真である。13 is a photograph of the same laminate after self-assembly. 実施例2で得られた積層体の自己組立前の写真である。1 is a photograph of the laminate obtained in Example 2 before self-assembly. 同積層体の自己組立後の写真である。13 is a photograph of the same laminate after self-assembly. 比較例2で得られた積層体の自己組立前の写真である。1 is a photograph of the laminate obtained in Comparative Example 2 before self-assembly. 同積層体の自己組立後の写真である。13 is a photograph of the same laminate after self-assembly. 従来技術で得られる積層体の自己組立前の図である。FIG. 1 shows a stack obtained according to the prior art before self-assembly. 同積層体の長軸方向の自己組立後の図である。FIG. 2 is a view of the laminate after self-assembly in the longitudinal direction. 同積層体の短軸方向の自己組立後の図である。FIG. 13 is a view of the laminate after self-assembly in the short axis direction. 同積層体に生体組織を近づけ、積層体が長軸方向に自己組立した状態を示す図である。FIG. 13 is a diagram showing the state in which a biological tissue is brought close to the laminate and the laminate self-assembles in the longitudinal direction. 同積層体に生体組織を近づけ、積層体が短軸方向に自己組立した状態を示す図である。FIG. 13 is a diagram showing the state in which a biological tissue is brought close to the laminate and the laminate self-assembles in the minor axis direction.

 以下、本発明を適用した実施形態に係る構造体について、図面を用いて詳細に説明する。なお、以下の説明で用いる図面は、特徴を分かりやすくするために、便宜上特徴となる部分を拡大して示している場合があり、各構成要素の寸法比率等が実際と同じであるとは限らない。また、以下の説明において例示される材料、寸法等は一例であって、本発明はそれらに限定されるものではなく、その要旨を変更しない範囲で適宜変更して実施することが可能である。 Below, structures according to embodiments of the present invention will be described in detail with reference to the drawings. Note that the drawings used in the following description may show enlarged characteristic parts for the sake of convenience in order to make the features easier to understand, and the dimensional ratios of each component may not necessarily be the same as in reality. Furthermore, the materials, dimensions, etc. exemplified in the following description are merely examples, and the present invention is not limited to them, and may be modified as appropriate within the scope of the present invention.

 図1Aは、本発明の一実施形態に係る構造体100の積層構造を示す断面図である。図1Bは、構造体100を積層方向Lから平面視した平面図である。図1Cは、構造体100の斜視図である。構造体100は、自己組立が可能な構造を有する構造体であって、基板101と、犠牲層102と、自己組立可能な積層体103とを備える。 FIG. 1A is a cross-sectional view showing the layered structure of a structure 100 according to one embodiment of the present invention. FIG. 1B is a plan view of the structure 100 viewed from the layering direction L. FIG. 1C is a perspective view of the structure 100. The structure 100 is a self-assembling structure, and includes a substrate 101, a sacrificial layer 102, and a self-assembling layered structure 103.

 基板101は、平坦な一面101を有する板状の部材である。基板101の構成材料としては、通常の半導体プロセスに利用できる素材であればよく、例えば、ガラス、シリコン、プラスチック等が挙げられる。基板101の構成材料は、ポリエチレンテレフタラート(PET)のような柔軟な素材であってもよい。 The substrate 101 is a plate-like member having a flat surface 101. The constituent material of the substrate 101 may be any material that can be used in normal semiconductor processes, such as glass, silicon, plastic, etc. The constituent material of the substrate 101 may also be a flexible material such as polyethylene terephthalate (PET).

 犠牲層102は、基板の一方の主面に形成される。犠牲層102は、所定の方法により、各薄膜層及び生体組織にダメージを与えることなく除去することが可能な材料で構成される。犠牲層102の構成材料としては、特に限定されないが、本実施形態では、アルギン酸カルシウムを用いる場合を例示する。アルギン酸ナトリウム水溶液を親水性フィルターでろ過し、固体の基板101上にスピンコートし、これを塩化カルシウム水溶液に浸漬することにより、ゲル化したアルギン酸カルシウム薄膜が得られる。アルギン酸カルシウム薄膜は、EDTA(ethylenediaminetetraacetic acid: エチレンジアミン四酢酸)を追加することによってアルギン酸カルシウム内のカルシウムイオンがEDTAにキレートされ、除去することができる。 The sacrificial layer 102 is formed on one of the main surfaces of the substrate. The sacrificial layer 102 is made of a material that can be removed by a predetermined method without damaging the thin film layers and the biological tissue. The material of the sacrificial layer 102 is not particularly limited, but in this embodiment, calcium alginate is used as an example. A sodium alginate solution is filtered through a hydrophilic filter, spin-coated onto the solid substrate 101, and immersed in a calcium chloride solution to obtain a gelled calcium alginate thin film. The calcium alginate thin film can be removed by adding EDTA (ethylenediaminetetraacetic acid) to chelate the calcium ions in the calcium alginate with EDTA.

 積層体103は、犠牲層102の上に形成され、導電体層104と誘電体層105とを積層してなる薄膜層である。本実施形態では、導電体層104、誘電体層105の順に一層ずつ積層する場合を例示しているが、導電体層104、誘電体層105の層数、積層順が限定されることはない。例えば、誘電体層105を二つの導電体層104で挟んだ層構造であってもよいし、導電体層104を二つの誘電体層105で挟んだ層構造であってもよい。ただし、いずれの層構造においても、自己組立が可能な構成、すなわち、全層が同じ方向に揃って湾曲する構成であるとする。このような層構造は、例えば、基板101から遠い上側の層ほどヤング率が小さくなる構成とすることによって得られる。 The laminate 103 is a thin film layer formed on the sacrificial layer 102, and is formed by laminating a conductive layer 104 and a dielectric layer 105. In this embodiment, the conductive layer 104 and the dielectric layer 105 are laminated one by one in this order, but the number of layers of the conductive layer 104 and the dielectric layer 105 and the order of lamination are not limited. For example, the layer structure may be one in which the dielectric layer 105 is sandwiched between two conductive layers 104, or one in which the conductive layer 104 is sandwiched between two dielectric layers 105. However, in either layer structure, the structure is assumed to be self-assembling, that is, the structure in which all layers are curved in the same direction. Such a layer structure can be obtained, for example, by configuring the Young's modulus to be smaller in the upper layers farther from the substrate 101.

 導電体層104は、グラフェン、MoSのように、一面に沿って並ぶ原子で構成される二次元原子層であることが好ましい。誘電体層105は、例えば、ポリマーの一種であるパリレン(ポリパラキシレン)で構成することができる。 The conductive layer 104 is preferably a two-dimensional atomic layer composed of atoms aligned along one plane, such as graphene or MoS2 . The dielectric layer 105 can be composed of, for example, parylene (polyparaxylylene), a type of polymer.

 図2は、積層方向Lから平面視した積層体103の平面図である。積層体103の外周部は、積層体103の自己組立にともなって湾曲する湾曲領域Rと、湾曲しない非湾曲領域Rとを有する。湾曲領域Rは、自己組立を行う際に、犠牲層102の溶解が相対的に速く進んで湾曲する領域である。非湾曲領域Rは、犠牲層102の溶解が相対的に遅く進み、先に湾曲する湾曲領域Rによって、湾曲が抑えられる領域である。 2 is a plan view of the laminate 103 viewed from the lamination direction L. The outer periphery of the laminate 103 has a curved region R1 that curves as the laminate 103 self-assembles, and a non-curved region R2 that does not curve. The curved region R1 is a region in which the dissolution of the sacrificial layer 102 progresses relatively quickly during self-assembly, causing the laminate to curve. The non-curved region R2 is a region in which the dissolution of the sacrificial layer 102 progresses relatively slowly, and the curvature of the non-curved region R2 is suppressed by the curved region R1 , which curves first.

 積層方向Lからの平面視において、積層体103が矩形である場合、非湾曲領域Rは、矩形のいずれかの辺に沿った領域である。ここでは、同平面視において、積層体103が長方形であり、非湾曲領域は、長方形の短辺に沿った領域(短辺部)である場合について例示している。 When the laminate 103 is rectangular in plan view from the stacking direction L, the non-curved region R2 is a region along any side of the rectangle. Here, a case is illustrated in which the laminate 103 is rectangular in plan view and the non-curved region is a region along a short side of the rectangle (short side portion).

 積層体103は、外周部の非湾曲領域R(ここでは短辺近傍の領域)に沿って並び、積層方向Lに貫通する複数の貫通孔(ホールパタン)106を有する。積層方向Lからの平面視における貫通孔106の形状は、特に限定されることはない。同平面視における貫通孔106のサイズ(内径)は、積層体103のサイズ(最大径)の10分の1(1/10)以下であることが好ましい。例えば積層体103および貫通孔106が長方形であり、図2に示すように配置される場合、貫通孔106の長辺の長さ(内径)は、積層体の長辺(最大径)の長さの10分の1以下であることが好ましい。 The laminate 103 has a plurality of through holes (hole patterns) 106 arranged along a non-curved region R 2 (here, a region near the short side) of the outer periphery and penetrating in the lamination direction L. The shape of the through holes 106 in a plan view from the lamination direction L is not particularly limited. The size (inner diameter) of the through holes 106 in the plan view is preferably one tenth (1/10) or less of the size (maximum diameter) of the laminate 103. For example, when the laminate 103 and the through holes 106 are rectangular and arranged as shown in FIG. 2, the length (inner diameter) of the long side of the through holes 106 is preferably one tenth or less of the length of the long side (maximum diameter) of the laminate.

 積層体103の外周部は、外周端から内側に所定の幅(距離)Dを有する領域である。この幅Dは、積層体103の長さ(ここでは長辺の長さ)Lの5分の1(1/5)以下であることが好ましい。貫通孔106は、この外周部の中に形成されることが好ましい。換言すると、非湾曲領域Rは、積層体103の外周端から内側に、積層体103の長さの1/5の以下の幅を有する領域である。 The outer periphery of the laminate 103 is a region having a predetermined width (distance) D from the outer periphery edge to the inside. This width D is preferably one fifth (1/5) or less of the length L1 (here, the length of the long side) of the laminate 103. The through holes 106 are preferably formed within this outer periphery. In other words, the non-curved region R2 is a region having a width from the outer periphery edge of the laminate 103 to the inside, which is 1/5 or less of the length of the laminate 103.

 構造体100は、以下の手順で作製することができる。 The structure 100 can be fabricated by the following steps.

(基板清浄化)
 基板101を、ピラニア、酸素プラズマ等で清浄化する。ピラニア等の強酸で処理できない場合には、エタノールやアセトン、IPA等の有機溶媒で処理してもよい。
(Substrate cleaning)
The substrate 101 is cleaned with piranha, oxygen plasma, etc. If it is not possible to treat it with a strong acid such as piranha, it may be treated with an organic solvent such as ethanol, acetone, IPA, etc.

(犠牲層形成)
 洗浄した基板の一方の主面101aに、犠牲層102を成膜する。この時、基板101の全面に犠牲層102を成膜してもよいし、フォトリソグラフィ等を併用して、基板101の所定の領域に犠牲層102をパターニングしてもよい。犠牲層102が金属やアルギン酸カルシウムで構成される場合、フォトレジストパタンをアセトンで除去した後も、犠牲層として利用することができる。
(Sacrificial layer formation)
A sacrificial layer 102 is formed on one of the main surfaces 101a of the cleaned substrate. At this time, the sacrificial layer 102 may be formed on the entire surface of the substrate 101, or the sacrificial layer 102 may be patterned in a predetermined region of the substrate 101 by using photolithography or the like in combination. When the sacrificial layer 102 is made of metal or calcium alginate, it can be used as the sacrificial layer even after the photoresist pattern is removed with acetone.

(導電体層形成)
 犠牲層102を成膜した基板101上(ここでは一方の主面101a)に、導電体層104として、例えば二次元原子薄膜を転写する。二次元原子層は、二次元結晶から剥離した原子層を基板に転写してもよいし、CVD成長した原子層を転写してもよい。二次元原子層は、単原子層から100原子層、厚みを0.1nm~50nm程度とするのが好ましい。
(Conductor layer formation)
On the substrate 101 (here, one of the main surfaces 101a) on which the sacrificial layer 102 has been formed, for example, a two-dimensional atomic thin film is transferred as the conductive layer 104. The two-dimensional atomic layer may be an atomic layer peeled off from a two-dimensional crystal and transferred onto the substrate, or an atomic layer grown by CVD may be transferred. The two-dimensional atomic layer is preferably a monolayer to 100 atomic layers, with a thickness of about 0.1 nm to 50 nm.

(誘電体層形成)
 誘電体層105を成膜する。誘電体層105の材料としてパリレンを用いる場合、ダイマーからCVD成長したパリレンのポリマーを成膜する。パリレンは蒸着により容易に成膜できる上に、グラフェンのようなπ共役系の二次元薄膜とπ-π共役により強く結合する。そのため、成膜した誘電体層105が、π共役系二次元薄膜から容易に剥離するのを防ぐことができる。パリレンを用いる場合の誘電体層105の厚みは、100nm~3000nmとするのが好ましい。
(Dielectric layer formation)
A dielectric layer 105 is formed. When parylene is used as the material of the dielectric layer 105, a parylene polymer grown by CVD from a dimer is formed. Parylene can be easily formed into a film by vapor deposition, and is strongly bonded to a two-dimensional thin film of a π-conjugated system such as graphene by π-π conjugation. Therefore, it is possible to prevent the formed dielectric layer 105 from being easily peeled off from the two-dimensional thin film of a π-conjugated system. When parylene is used, the thickness of the dielectric layer 105 is preferably 100 nm to 3000 nm.

(パターニング)
 形成された積層体103の薄膜に対し、リソグラフィによってパターニングを行う。図3Aは、パターニング中の構造体100の断面図である。図3Bは、パターニング後の構造体100の平面図である。
(Patterning)
The resulting thin film of stack 103 is then patterned by lithography: Figure 3A shows a cross-sectional view of structure 100 during patterning, and Figure 3B shows a top view of structure 100 after patterning.

 例えば、図3Aに示すように、積層体103の上に、レジスト107をスピンコートする。レジスト107はポジ型、ネガ型のいずれでもよいが、パタンとして残したい箇所に、現像後のレジスト107が形成されるようにする。パタンを形成するレジスト107は、後のドライエッチング処理後も除去されずに残る程度の膜厚であることが好ましい。なお、ここでは薄膜パタンを長方形としているが、目的に応じた任意のパタンで良い。 For example, as shown in FIG. 3A, resist 107 is spin-coated onto laminate 103. Resist 107 may be either positive or negative, but it is made so that resist 107 after development is formed in the areas where it is desired to leave a pattern. It is preferable that resist 107 forming the pattern has a film thickness that is sufficient to remain without being removed even after the subsequent dry etching process. Note that although the thin film pattern is rectangular here, any pattern may be used depending on the purpose.

 本実施形態では、自己組立の方向を制御する薄膜パタン(積層体103)端部のホールパタン(貫通孔106)も、この段階でパターニングしているが、薄膜パタンのパターニングとホールパタンのパターニングを、別々に行ってもよい。 In this embodiment, the hole pattern (through hole 106) at the end of the thin film pattern (laminate 103) that controls the direction of self-assembly is also patterned at this stage, but the patterning of the thin film pattern and the hole pattern may be performed separately.

 長辺方向を軸方向とする円筒形になるように、長方形パタンを湾曲させて自己組立する場合、長方形パタンの両短辺部にホールパタンを設ける。この場合、両長辺部が湾曲部となり、両短辺部が非湾曲領域となる。正方形パタンを湾曲させて円筒形を自己組立する場合には、円筒形の軸方向と交差し、相対する両辺端部にホールパタンを設ける。 When bending and self-assembling a rectangular pattern to form a cylinder with the long side in the axial direction, hole patterns are provided on both short sides of the rectangular pattern. In this case, both long sides become curved sections and both short sides become non-curved areas. When bending and self-assembling a square pattern to form a cylinder, hole patterns are provided on both opposing ends that intersect with the axial direction of the cylinder.

 ホールパタンの数、サイズ、位置については、目的に合わせて調整することができる。例えば、長方形を、長辺方向が軸方向になるように湾曲させ、自己組立した円筒を得たい場合、ホールパタンの最大サイズ(最大径)Lを、長辺のサイズLの1/10以内に抑えたほうがよい。例えば、積層体が200μm×400μmの長方形パタンである場合のホールパタンは、矩形(正方形または長方形)であれば、40μm×40μmまでのサイズであることが好ましく、円形(真円または楕円)であれば、直径が40μmまでのサイズであることが好ましい。ただし、ホールパタンのサイズは、短辺部に収まるサイズであるとする。積層体が長方形パタンである場合、ホールパタンは、短辺部からの距離Dが長辺の1/5以下である領域に収まるように配置されることが好ましい。 The number, size, and position of the hole pattern can be adjusted according to the purpose. For example, if it is desired to obtain a self-assembled cylinder by bending a rectangle so that the long side direction is the axial direction, it is better to suppress the maximum size (maximum diameter) L of the hole pattern to within 1/10 of the size L1 of the long side. For example, if the laminate is a rectangular pattern of 200 μm x 400 μm, the hole pattern is preferably up to 40 μm x 40 μm if it is a rectangle (square or rectangle), and is preferably up to 40 μm in diameter if it is a circle (perfect circle or ellipse). However, the size of the hole pattern is assumed to be a size that fits within the short side. If the laminate is a rectangular pattern, it is preferable that the hole pattern is arranged so that it fits within an area where the distance D from the short side is 1/5 or less of the long side.

 リソグラフィでのパタン形成後、図3Aに示すように、ドライエッチングでパタン外の薄膜層を除去する。例えば、犠牲層、二次元原子層、誘電体層の構成材料が、それぞれアルギン酸カルシウム、グラフェン、パリレンであれば、酸素プラズマ処理によりパタン外の薄膜層を除去することができる。目的に応じて、この他の条件で行ってもよい。酸素プラズマ処理で除去できない薄膜材料を用いている場合、イオンビームのような物理エッチングにより除去すればよい。このドライエッチングを行った後に、図1A、1B、1Cに示すような、本実施形態の構造体100が得られる。 After forming a pattern by lithography, the thin film layer outside the pattern is removed by dry etching as shown in FIG. 3A. For example, if the constituent materials of the sacrificial layer, the two-dimensional atomic layer, and the dielectric layer are calcium alginate, graphene, and parylene, respectively, the thin film layer outside the pattern can be removed by oxygen plasma treatment. Other conditions may be used depending on the purpose. If a thin film material that cannot be removed by oxygen plasma treatment is used, it can be removed by physical etching such as ion beam. After this dry etching, the structure 100 of this embodiment is obtained as shown in FIGS. 1A, 1B, and 1C.

 以上のように、本実施形態の構造体100では、積層体の外周の一部に貫通孔を形成することによって、犠牲層を溶解させる際の積層体の薄膜の自己組立方向を制御することができる。例えば、薄膜が長方形パタンを有する場合、短辺部に配列する貫通孔を有することで、長辺側よりも短辺側の犠牲層が素早く溶けるようになり、その結果、短辺方向を軸方向とする円筒状の自己組立を優先的に起こすことができる。薄膜が正方形パタンを有する場合、自己組立した円筒形を高効率で得ることができる。これにより、薄膜が細線や微粒子を囲む方に自己組立する方向を制御可能となり、細線の電気特性の評価や微粒子の内包効率を上げる効果を期待できる。 As described above, in the structure 100 of this embodiment, by forming through holes in part of the outer periphery of the laminate, it is possible to control the self-assembly direction of the thin film of the laminate when the sacrificial layer is dissolved. For example, when the thin film has a rectangular pattern, by having through holes arranged in the short side, the sacrificial layer on the short side melts more quickly than on the long side, and as a result, cylindrical self-assembly with the short side direction as the axial direction can be preferentially caused. When the thin film has a square pattern, a self-assembled cylindrical shape can be obtained with high efficiency. This makes it possible to control the direction in which the thin film self-assembles in the direction surrounding the thin wires or particles, which is expected to have the effect of improving the evaluation of the electrical properties of the thin wires and the inclusion efficiency of the particles.

 以下、実施例により、本発明の効果をより明らかなものとする。なお、本発明は、以下の実施例に限定されるものではなく、その要旨を変更しない範囲で適宜変更して実施することができる。 The effects of the present invention will be made clearer by the following examples. Note that the present invention is not limited to the following examples, and can be modified as appropriate without departing from the spirit of the present invention.

(実施例1)
 上記実施形態に沿って、貫通孔を有する長方形薄膜パタンの積層体の自己組立を行った。
Example 1
According to the above embodiment, self-assembly of a laminate of rectangular thin film patterns having through holes was carried out.

 図4Aは、形成した積層体の自己組立前(犠牲層の溶解前)の写真である。両短辺部に貫通孔を有する200μm×400μmの長方形薄膜パタンとした。積層体は、上層側から、パリレンで構成される誘電体層、単層または多層グラフェン(4-100層を多層とする)で構成される導電体層、アルギン酸カルシウムで構成される犠牲層を有するものとした。ホールパタン(貫通孔)は10μm×20μmの長方形とし、ホールパタン同士の中心間距離を30μmとした。 Figure 4A is a photograph of the laminate formed before self-assembly (before the sacrificial layer was dissolved). A rectangular thin film pattern of 200 μm x 400 μm was formed with through holes on both short sides. From the top, the laminate had a dielectric layer made of parylene, a conductor layer made of single-layer or multi-layer graphene (multi-layer is 4-100 layers), and a sacrificial layer made of calcium alginate. The hole pattern (through hole) was a rectangle of 10 μm x 20 μm, and the center-to-center distance between the hole patterns was 30 μm.

 図4Bは、積層体の自己組立後(犠牲層の溶解後)の写真である。EDTA(0.5M)を滴下して犠牲層を溶解させると、積層体は、短辺方向を軸方向とするダブルロール形状に自己組立された。本例ではダブルロール型に自己組立されているが、誘電体層を厚く積層すれば短軸方向に曲がったシングルロールの円筒形状を得ることができる。 Figure 4B is a photograph of the laminate after self-assembly (after dissolving the sacrificial layer). When EDTA (0.5 M) was dropped to dissolve the sacrificial layer, the laminate self-assembled into a double-roll shape with the short side direction as the axial direction. In this example, it is self-assembled into a double-roll type, but if the dielectric layer is laminated thickly, a single-roll cylindrical shape bent in the short axis direction can be obtained.

(比較例1)
 貫通孔を有していない長方形薄膜パタンの積層体の自己組立を行った。
(Comparative Example 1)
Self-assembly of a laminate of rectangular thin film patterns without through holes was performed.

 図5Aは、形成した積層体の自己組立前(犠牲層の溶解前)の写真である。貫通孔を設けていない点以外は、実施例1と同じ条件とした。 Figure 5A is a photograph of the laminate formed before self-assembly (before the sacrificial layer was dissolved). The conditions were the same as in Example 1, except that no through holes were provided.

 図5Bは、積層体の自己組立後(犠牲層の溶解後)の写真である。実施例1と同じ条件で犠牲層を溶解させると、積層体は、長辺方向を軸方向とするシングルロール形状に自己組立された。 Figure 5B is a photograph of the laminate after self-assembly (after dissolving the sacrificial layer). When the sacrificial layer was dissolved under the same conditions as in Example 1, the laminate self-assembled into a single roll shape with the long side direction as the axial direction.

 これらの結果から、貫通孔を形成することにより、短辺方向を軸方向として円筒状に湾曲させる自己組立を、実現できることが分かる。 These results show that by forming through holes, it is possible to achieve self-assembly by bending the short side into a cylindrical shape with the axial direction.

(実施例2)
 上記実施形態に沿って、貫通孔を有する正方形薄膜パタンの積層体の自己組立を行った。
Example 2
According to the above embodiment, self-assembly of a stack of square thin film patterns having through holes was carried out.

 図6Aは、形成した積層体の自己組立前(犠牲層の溶解前)の写真である。正方形薄膜パタン(200μm×200μm)の積層体を用い、四辺から選択した対向する二辺に沿って貫通孔を形成したこと以外は、実施例1と同じ条件とした。 Figure 6A is a photograph of the laminate formed before self-assembly (before the sacrificial layer was dissolved). The conditions were the same as in Example 1, except that a laminate with a square thin film pattern (200 μm × 200 μm) was used and through holes were formed along two opposing sides selected from the four sides.

 図6Bは、積層体の自己組立後(犠牲層の溶解後)の写真である。実施例1と同じ条件で犠牲層を溶解させると、積層体は、選択した二辺の方向を軸方向とする、シングルロール形状に自己組立された。 Figure 6B is a photograph of the laminate after self-assembly (after dissolving the sacrificial layer). When the sacrificial layer was dissolved under the same conditions as in Example 1, the laminate self-assembled into a single roll shape with the axial direction aligned along the two selected sides.

(比較例2)
 貫通孔を有していない正方形薄膜パタン積層体の自己組立を行った。
(Comparative Example 2)
Self-assembly of a square thin film pattern laminate without through holes was performed.

 図7Aは、形成した積層体の自己組立前(犠牲層の溶解前)の写真である。貫通孔を設けていない点以外は、実施例2と同じ条件とした。 Figure 7A is a photograph of the laminate formed before self-assembly (before the sacrificial layer was dissolved). The conditions were the same as in Example 2, except that no through holes were provided.

 図7Bは、積層体の自己組立後(犠牲層の溶解後)の写真である。実施例2と同じ条件で犠牲層を溶解させると、積層体は、ランダムな方向に複雑に湾曲した。 Figure 7B is a photograph of the laminate after self-assembly (after dissolving the sacrificial layer). When the sacrificial layer was dissolved under the same conditions as in Example 2, the laminate curved in a complex manner in random directions.

 これらの結果から、貫通孔を形成することにより、貫通孔を設けて選択した二辺の方向を軸方向として円筒状に湾曲させる自己組立を、実現できることが分かる。 These results show that by forming through holes, it is possible to achieve self-assembly by creating through holes and bending the material into a cylindrical shape with the axial direction of two selected sides.

 100  構造体
 101  基板
 101a  基板の一方の主面
 102  犠牲層
 103  積層体
 104  導電体層
 105  誘電体層
 106  貫通孔
 107  レジスト
 L  積層方向
 R  湾曲領域
 R  非湾曲領域
REFERENCE SIGNS LIST 100 Structure 101 Substrate 101a One main surface of substrate 102 Sacrificial layer 103 Laminate 104 Conductive layer 105 Dielectric layer 106 Through hole 107 Resist L Lamination direction R 1 Curved region R 2 Non-curved region

Claims (5)

 自己組立が可能な構造を有する構造体であって、
 基板と、
 基板の一方の主面に形成された犠牲層と、
 前記犠牲層の上に形成され、導電体層と誘電体層とを積層してなる積層体と、を備え、
 前記積層体の外周部は、前記自己組立にともなって湾曲する湾曲領域と、湾曲しない非湾曲領域とを有し、
 前記積層体は、前記外周部の前記非湾曲領域に沿って並び、積層方向に貫通する複数の貫通孔を有する、ことを特徴とする構造体。
A structure having a self-assembly structure,
A substrate;
A sacrificial layer formed on one main surface of a substrate;
a laminate formed on the sacrificial layer and including a conductive layer and a dielectric layer;
an outer periphery of the laminate has a curved region that curves as the laminate self-assembles and a non-curved region that does not curve;
A structure characterized in that the laminate has a plurality of through holes aligned along the non-curved region of the outer periphery and penetrating in the stacking direction.
 前記積層方向からの平面視において、前記積層体は矩形であり、
 前記非湾曲領域は、前記矩形のいずれかの辺に沿った領域である、ことを特徴とする請求項1に記載の構造体。
When viewed in a plan view from the stacking direction, the stack is rectangular,
2. The structure of claim 1, wherein the non-curved region is along one side of the rectangle.
 前記平面視において、前記積層体は長方形であり、
 前記非湾曲領域は、前記長方形の短辺に沿った領域である、ことを特徴とする請求項2に記載の構造体。
In the plan view, the laminate is rectangular,
3. The structure of claim 2, wherein the non-curved region is along a short side of the rectangle.
 前記貫通孔の内径が、前記積層体の最大径の1/10以下である、ことを特徴とする請求項1または2のいずれかに記載の構造体。 The structure described in either 1 or 2, characterized in that the inner diameter of the through hole is 1/10 or less of the maximum diameter of the laminate.  前記非湾曲領域は、前記積層体の外周端から内側に、前記積層体の長さの1/5の以下の幅を有する領域である、ことを特徴とする請求項1または2のいずれかに記載の構造体。 The structure described in either claim 1 or 2, characterized in that the non-curved region is a region extending inward from the outer peripheral edge of the laminate and having a width of 1/5 or less of the length of the laminate.
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