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WO2025037807A1 - Procédé de sélection de cible de dispositif de métrologie de recouvrement et système de sélection de cible de dispositif de métrologie de recouvrement - Google Patents

Procédé de sélection de cible de dispositif de métrologie de recouvrement et système de sélection de cible de dispositif de métrologie de recouvrement Download PDF

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Publication number
WO2025037807A1
WO2025037807A1 PCT/KR2024/011370 KR2024011370W WO2025037807A1 WO 2025037807 A1 WO2025037807 A1 WO 2025037807A1 KR 2024011370 W KR2024011370 W KR 2024011370W WO 2025037807 A1 WO2025037807 A1 WO 2025037807A1
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evaluation
overlay
targets
target
measurement
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Korean (ko)
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최성윤
임혜지
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Auros Technology Inc
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Auros Technology Inc
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

Definitions

  • the present invention relates to optimization of an overlay measurement device for a wafer, and more particularly, to a target selection method for an overlay measurement device and a target selection system for an overlay measurement device.
  • electrically active patterns are created within the integrated circuit. If each structure is not aligned within the tolerance allowed by the production process, interference between electrically active patterns may occur, which may cause problems in the performance and reliability of the manufactured circuit.
  • the pattern alignment error between layers is measured and verified through a measuring device, and the focus position is found through the brightness or phase difference in the target image for the wafer for measurement and verification.
  • the wafer is placed on the stage to measure the pattern formed on each layer of the wafer, the patterns formed at various locations on the top of the wafer are detected.
  • the present invention is intended to solve various problems including the above-mentioned problems, and provides a method for selecting a target of an overlay measurement device and a system for selecting a target of an overlay measurement device, which can select a sample map that can have the most similar results to a map in which all patterns formed on a wafer are measured by repeatedly performing a suitability evaluation so as to select the most similar representative pattern that can replace all patterns formed on a wafer.
  • these tasks are exemplary and the scope of the present invention is not limited thereby.
  • a method for selecting a target of an overlay measurement device may include: (a) a step of selecting a plurality of overlay targets formed on a wafer as acquisition targets; (b) a step of performing a suitability evaluation on a plurality of evaluation samples formed as different targets among the acquisition targets, thereby selecting at least one candidate sample among the plurality of evaluation samples; and (c) a step of selecting targets constituting the candidate samples as measurement targets to be used in a field map of an overlay measurement recipe.
  • the step (c) may select, as the measurement target, the candidate sample having the best result in the suitability evaluation among the candidate samples selected in the step (b).
  • the suitability evaluation can be performed by including a parameter evaluation calculated as an overlay modeling result value of the plurality of evaluation samples and an overlay measurement evaluation calculated as a difference between the acquisition target and targets constituting the plurality of evaluation samples.
  • the parameter evaluation of the suitability assessment may calculate an average and a standard deviation of the plurality of element values calculated through a plurality of element values affecting the overlay measurement of the plurality of overlay targets formed on the wafer and a plurality of element values affecting the overlay measurement of the targets constituting the plurality of evaluation samples, and store an average of the overlay measurement values calculated by excluding at least one element value of the plurality of element values and setting the remaining element values to 0 as a first evaluation value, and store the standard deviation of the overlay measurement values as a second evaluation value
  • the overlay measurement evaluation of the suitability assessment may store an average of difference values calculated through the overlay calculation values calculated from the plurality of overlay targets formed on the wafer and the overlay calculation values calculated from the targets constituting the plurality of evaluation samples as a third evaluation value, and store the standard deviation of the difference values as a fourth evaluation value.
  • the parameter evaluation is performed to sort the order of the plurality of evaluation samples and assign a set score according to the order
  • the overlay measurement evaluation is performed to sort the order of the plurality of evaluation samples and assign a set score according to the order
  • the scores of each evaluation sample are added up, and at least one evaluation sample among the plurality of evaluation samples is selected according to the added score.
  • the method may include: (d) comparing a learning wafer used to select the measurement target in steps (a), (b), and (c) with a comparison wafer that did not perform steps (a), (b), and (c), to verify whether the measurement target is a target to be used in a field map of the overlay measurement recipe.
  • the step (d) may include: (d-1) performing the suitability evaluation on the measurement target selected in the step (c) among the plurality of overlay targets formed on the learning wafer; (d-2) performing the suitability evaluation on a target formed at the same position as the measurement target selected in the step (c) among the plurality of overlay targets formed on the comparison wafer; (d-3) performing the suitability evaluation on an arbitrary target among the plurality of overlay targets formed on the comparison wafer; and (d-4) comparing the results of the suitability evaluations calculated in the steps (d-1), (d-2), and (d-3).
  • a target selection system of an overlay measurement device may include an acquisition target selection unit that selects a plurality of overlay targets formed on a wafer as acquisition targets; a candidate sample selection unit that performs a suitability evaluation on a plurality of evaluation samples formed as different targets among the acquisition targets, thereby selecting at least one candidate sample among the plurality of evaluation samples; and a measurement target selection unit that selects measurement targets to be used in a field map of an overlay measurement recipe from targets constituting the candidate samples.
  • the candidate sample selection unit may include an evaluation sample generation unit that generates a plurality of evaluation samples formed by combinations of different targets from among the remaining targets, excluding at least one target from among the acquisition targets selected in a previous step; an evaluation unit that performs the suitability evaluation on each of the plurality of evaluation samples; a sorting unit that selects a preset number of candidate samples from among the plurality of evaluation samples in the order of the suitability evaluation; and a conversion unit that re-selects targets constituting the candidate samples as acquisition targets.
  • the measurement target selection unit can select a candidate sample having the best result of the suitability evaluation among the candidate samples selected by the candidate sample selection unit as the measurement target.
  • the candidate sample selection unit can perform the suitability evaluation comprised of a parameter evaluation calculated as an overlay modeling result value of the plurality of evaluation samples and an overlay measurement evaluation calculated as a difference between the acquisition target and targets constituting the plurality of evaluation samples.
  • the parameter evaluation of the suitability assessment may calculate an average and a standard deviation of the plurality of element values calculated through a plurality of element values affecting overlay measurements of a plurality of overlay targets formed on the wafer and a plurality of element values affecting overlay measurements of targets constituting the plurality of evaluation samples, and store an average of the overlay measurement values calculated by excluding at least one element value of the plurality of element values and setting the remaining element values to 0 as a first evaluation value, and store the standard deviation of the overlay measurement values as a second evaluation value
  • the overlay measurement evaluation of the suitability assessment may store an average of difference values calculated through overlay calculation values calculated from the plurality of overlay targets formed on the wafer and overlay calculation values calculated from the targets constituting the plurality of evaluation samples as a third evaluation value, and store the standard deviation of the difference values as a fourth evaluation value.
  • the candidate sample selection unit may perform the parameter evaluation to sort the order of the plurality of evaluation samples and assign a set score according to the order, perform the overlay measurement evaluation to sort the order of the plurality of evaluation samples and assign a set score according to the order, add up the scores of each evaluation sample, and select at least one evaluation sample from among the plurality of evaluation samples according to the summed score.
  • the method may include a verification unit that compares a learning wafer used to select the measurement target in the acquisition target selection unit, the candidate sample selection unit, and the measurement target selection unit with a comparison wafer in which the measurement target is not selected, to verify whether the measurement target is a target to be used in a field map of the overlay measurement recipe.
  • the verification unit may include a first evaluation unit that performs the suitability evaluation on a measurement target selected by the measurement target selection unit among a plurality of overlay targets formed on the learning wafer; a second evaluation unit that performs the suitability evaluation on a target formed at the same position as the measurement target selected by the measurement target selection unit among a plurality of overlay targets formed on the comparison wafer; a third evaluation unit that performs the suitability evaluation on an arbitrary target among a plurality of overlay targets formed on the comparison wafer; and a comparison unit that compares the results of the suitability evaluations produced by the first evaluation unit, the second evaluation unit, and the third evaluation unit.
  • overlay measurement can be performed using a recipe generated based on a sample map, which has the effect of shortening the wafer overlay measurement time and increasing productivity.
  • the scope of the present invention is not limited by these effects.
  • FIG. 1 is a drawing schematically illustrating an overlay measuring device according to one embodiment of the present invention.
  • FIG. 2 is a top view showing a plurality of overlay targets of a wafer mounted on a stage of the overlay measurement device of FIG. 1.
  • Fig. 3 is a drawing showing the control unit of the overlay measuring device of Fig. 1.
  • FIGS. 4 to 7 are flowcharts showing a target selection method of an overlay measuring device according to various embodiments of the present invention.
  • FIG. 8 is a drawing showing one embodiment of a target selection method of an overlay measuring device according to the present invention.
  • FIG. 9 is a drawing schematically illustrating a verification step (d) in a target selection method of an overlay measuring device according to another embodiment of the present invention.
  • FIG. 10 is a drawing showing parameter evaluation of suitability assessment in a target selection method of an overlay measuring device according to the present invention.
  • FIG. 11 is a drawing showing an overlay measurement evaluation of suitability assessment in a target selection method of an overlay measuring device according to the present invention.
  • FIG. 12 is a table showing a suitability evaluation for a plurality of evaluation samples in a target selection method of an overlay measuring device according to the present invention.
  • FIG. 13 is a diagram schematically illustrating a target selection system of an overlay measuring device according to one embodiment of the present invention.
  • FIG. 14 is a diagram schematically showing a target selection system of an overlay measuring device according to another embodiment of the present invention.
  • FIG. 1 is a drawing schematically showing an overlay measurement device (1000) according to one embodiment of the present invention
  • FIG. 2 is a top view showing a plurality of overlay targets of a wafer mounted on a stage (500) of the overlay measurement device (1000) of FIG. 1
  • FIG. 3 is a drawing showing a control unit (400) of the overlay measurement device (1000) of FIG. 1.
  • the overlay measurement device (1000) is a device that detects a plurality of overlay targets (T) formed on a wafer (W) and measures alignment errors for two layers.
  • the plurality of overlay targets (T) may include a first overlay key and a second overlay key formed on different layers, respectively.
  • the first overlay key may be an overlay mark formed on a previous layer
  • the second overlay key may be an overlay mark formed on a current layer.
  • the overlay mark is formed on a scribe line at the same time as forming a layer for forming a semiconductor device in a die area.
  • the first overlay key may be formed together with an insulating film pattern
  • the second overlay key may be formed together with a photoresist pattern formed on the insulating film pattern.
  • the second overlay key is exposed to the outside, but the first overlay key is covered by the photoresist layer, and may be formed of an oxide having different optical properties from the second overlay key made of a photoresist material.
  • first overlay key and the second overlay key are different, their focal planes may be the same or different.
  • the overlay measuring device (1000) may include a light source unit (100), a lens unit (200), a detection unit (300), and a control unit (400).
  • the light source unit (100) can direct illumination to a plurality of overlay targets (T) formed on a wafer (W). Specifically, the light source unit (100) can be configured to direct illumination to a plurality of overlay targets (T) in which a first overlay key formed on a first layer laminated on the wafer (W) and a second overlay key formed on a second layer laminated above the first layer are positioned.
  • the light source unit (100) may include a light source (110), a spectrum filter (120), a polarizing filter, an aperture (130), and a beam splitter (140).
  • the light source (110) may be formed by a halogen lamp, a xenon lamp, a supercontinuum laser, a light-emitting diode, a laser induced lamp, etc., and may include various wavelengths such as ultraviolet (UV), visible light, or infrared (IR), but is not limited thereto.
  • UV ultraviolet
  • IR infrared
  • the spectral filter (120) can adjust the center wavelength and bandwidth of the beam irradiated from the light source (110) to be suitable for image acquisition of the first overlay key and the second overlay key formed on the plurality of overlay targets (T).
  • the spectral filter (120) can be formed of at least one or more of a filter wheel, a linear translation device, a flipper device, and a combination thereof.
  • the aperture (130) may be formed as an opaque plate having an opening through which light passes, and the beam emitted from the light source (110) may be changed into a shape suitable for photographing a plurality of overlay targets (T).
  • the aperture (130) may include at least one of an aperture stop for controlling the amount of light and a field stop for controlling the range of the image formed, and may be formed between the light source (110) and the beam splitter (140), as shown in FIG. 1, and although not shown, may be formed between the beam splitter (140) and the lens unit (200).
  • the beam splitter (140) separates the beam from the light source (110) into two beams by transmitting part of the beam that has passed through the aperture (130) from the light source (110) and reflecting part of the beam.
  • the lens unit (200) may be formed with an objective lens (210) that focuses the light onto a measurement position of one point among a plurality of overlay targets (T), a lens focus actuator (220) that adjusts the distance between the objective lens (210) and the plurality of overlay targets (T) at the measurement position, and a pinhole (230) that passes light reflected at the measurement position.
  • the objective lens (210) can focus the beam reflected from the beam splitter (140) onto the measurement position where the first overlay key and the second overlay key of the wafer (W) are formed and collect the reflected beam.
  • the objective lens (210) can be installed in a lens focus actuator (220).
  • the lens focus actuator (220) can adjust the distance between the objective lens (200) and the wafer (W) so that the focal plane is positioned at a plurality of overlay targets (T).
  • the lens focus actuator (220) can adjust the focal length by vertically moving the objective lens (200) in the direction of the wafer (W) under the control of the control unit (400).
  • the pinhole (230) is composed of an opaque layer having a hole on the upper part of a transparent substrate such as a glass substrate, so that light incident on the hole can pass through it. At this time, the hole is formed in multiple pieces, so that it can be used selectively depending on the size or shape of the hole.
  • the pinhole (230) can move in all directions based on the wafer (W), and for example, can control the position through which light passes by moving along the X-axis and Y-axis. At this time, by arbitrarily moving the position of the pinhole (230) to measure the TIS (Tool Induced Shift), an overlay correction value according to an error occurring in the overlay measurement device (1000) is calculated, and the position of the pinhole (230) can be corrected with the calculated correction value to measure the overlay.
  • TIS Tool Induced Shift
  • the area where the image is captured changes as the objective lens (210) is controlled, and at this time, the area where the wafer (W) can be captured by the objective lens (210) is the field of view. That is, the field of view (FOV) can be adjusted by the objective lens (210), and the focus can be adjusted by the lens focus actuator (220).
  • FOV field of view
  • the detection unit (300) can obtain a focus image at the measurement position through a beam reflected at the measurement position.
  • the detection unit (300) can capture the beam reflected from a plurality of overlay targets (T) and passing through the beam splitter (140) to obtain images of the first overlay key and the second overlay key.
  • the detection unit (300) may include an optical detector capable of measuring a beam reflected from a plurality of overlay targets (T), and for example, the optical detector may include a charge-coupled device (CCD) that converts light into charges to extract an image, a complementary metal-oxide-semiconductor (CMOS) sensor, which is one type of integrated circuit, a photomultiplier tube (PMT) that measures light, an avalanche photodiode (APD) array as a photodetector, or various sensors that generate or capture images.
  • CCD charge-coupled device
  • CMOS complementary metal-oxide-semiconductor
  • PMT photomultiplier tube
  • APD avalanche photodiode
  • the detection unit (300) may include a filter, a polarizing plate, a beam block, and may further include any collecting optical component (not shown) for collecting the illumination collected by the objective lens (210).
  • the detection unit (300) can measure a global mark to confirm the correct position of the wafer (W).
  • a wafer (W) is placed on the upper part of the stage (500), the wafer (W) is fixed on the upper part of the stage (500), and the stage (500) can move and rotate horizontally so that a plurality of overlay targets (T) of the wafer (W) can be measured from the upper lens unit (200).
  • the control unit (400) can control the direction of the light irradiated from the light source unit (100), control the lens unit (200) to focus the light on a plurality of overlay targets (T) and collect the reflected beams, control the operation of the lens focus actuator (220) to focus the light on a plurality of overlay targets (T) and obtain a focus image, control the detection unit (300) to obtain a focus image measured through the reflected beams collected from the lens unit (200), and control the movement of the stage (500) so that the overlay targets are positioned below the lens unit (200).
  • the control unit (400) may include a storage unit (440) that stores the overlay measurement image measured by the detection unit (300).
  • the storage unit (440) may include a storage unit (440) that stores commands, programs, logic, etc. that control the operation of each component of the overlay measuring device (1000), and components may be added, changed, or deleted as needed.
  • the storage unit (440) may include an automatic measurement program (ARO, Auto Recipe Optimization) that automatically optimizes and calculates measurement options of an overlay measurement recipe, including a filter, a numerical aperture (NA), a focus, a pinhole, etc.
  • ARO Auto Recipe Optimization
  • the above automatic measurement program may include, in addition to the optimized recipe information regarding the operation of the measurement device, information about the measurement device and information about the wafer (W) introduced into the overlay measurement device (1000). Accordingly, the automatic measurement program may automatically calculate optimal options through the optimized recipe information, the measurement device information, and the measurement target position information.
  • the control unit (400) may include an acquisition target selection unit (450), a candidate sample selection unit (460), a measurement target selection unit (470), and a verification unit (480). At this time, each component of the control unit (400) may have its own individual process, and may exchange data or signals in real time from one component to another.
  • control unit (400) Each configuration of the control unit (400) will be described later in the target selection system of the overlay measuring device to be described later.
  • control unit (400) may include a display unit (not shown) for the user to monitor and an input unit (not shown) for the user to directly control.
  • FIGS. 4 and 5 are flowcharts showing a target selection method of an overlay measuring device according to embodiments of the present invention
  • FIG. 8 is a drawing schematically showing a target selection method of an overlay measuring device.
  • a method for selecting a target of an overlay measurement device may include, as illustrated in FIG. 4, (a) a step of selecting a plurality of overlay targets (T) as acquisition targets, (b) a step of selecting a candidate sample, and (c) a step of selecting a measurement target.
  • the step (a) is a step of selecting a plurality of overlay targets (T) formed on a wafer (W) as acquisition targets.
  • a wafer (W) for overlay measurement is introduced into an overlay measurement device (1000)
  • information about various wafers (W) including quantity information and position information for a plurality of overlay targets (T) can be stored.
  • n number of overlay targets (T) can be formed on a wafer (W), and n number of overlay targets including position information can be selected as acquisition targets (O).
  • a plurality of overlay targets (Dense plan) formed on a wafer (W) are formed as marks 1, 2, 3, 4, 5, and the marks 1, 2, 3, 4, 5 can become acquisition targets (O).
  • the step (b) is a step of performing a suitability evaluation (FF) on each of a plurality of evaluation samples (SP) formed as different targets among the acquisition targets (O) to select at least one candidate sample among the plurality of evaluation samples (SP).
  • FF suitability evaluation
  • the step (b) may include: (b-1) a step of generating a plurality of evaluation samples (SP), (b-2) a step of evaluating suitability, (b-3) a step of selecting a candidate sample (CP), and (b-4) a step of re-selecting it as an acquisition target (O).
  • SP evaluation samples
  • CP candidate sample
  • O acquisition target
  • the step (b-1) is a step of generating a plurality of evaluation samples (SP) formed by combinations of different targets among the remaining targets, excluding at least one target among the acquisition targets (O) selected in the previous step.
  • a plurality of evaluation samples (SP) are formed by a plurality of overlay targets, and at this time, the number of targets included in each of the plurality of evaluation samples (SP) is the same, but may be formed by targets formed at different locations.
  • five evaluation samples can be selected, including marks 1, 2, 3, 4 as a first evaluation sample (SP1), marks 1, 2, 3, 5 as a second evaluation sample (SP2), marks 1, 2, 4, 5 as a third evaluation sample (SP3), marks 1, 3, 4, 5 as a fourth evaluation sample (SP4), and marks 2, 3, 4, 5 as a fifth evaluation sample (SP5), excluding one target among marks 1, 2, 3, 4, 5.
  • SP1 first evaluation sample
  • SP2 second evaluation sample
  • SP3 marks 1, 2, 4, 5 as a third evaluation sample
  • SP4 marks 1, 3, 4, 5 as a fourth evaluation sample
  • SP5 a fifth evaluation sample
  • the above step (b-2) is a step of performing a suitability assessment (FF) on each of a plurality of evaluation samples (SP), and is a step of performing an evaluation on each evaluation sample by applying a preset suitability assessment (FF) to a plurality of evaluation samples (SP).
  • FF suitability assessment
  • a suitability assessment can be performed on each of the first evaluation sample (SP1), the second evaluation sample (SP2), the third evaluation sample (SP3), the fourth evaluation sample (SP4), and the fifth evaluation sample (SP5).
  • the suitability assessment result for the first evaluation sample (SP1) can be calculated as 4
  • the suitability assessment result for the second evaluation sample (SP2) can be calculated as 2
  • the suitability assessment result for the third evaluation sample (SP3) can be calculated as 3
  • the suitability assessment result for the fourth evaluation sample (SP4) can be calculated as 1
  • the suitability assessment result for the fifth evaluation sample (SP5) can be calculated as 5.
  • the specific calculation process of the suitability assessment (FF) will be described later.
  • the above step (b-3) is a step of selecting a preset number of candidate samples (CP) in the order of suitability evaluation among multiple evaluation samples (SP).
  • the multiple evaluation samples (SP) can be arranged in an order suitable for the target to be used in the field map of the overlay measurement recipe.
  • the above step (b-3) is a step of aligning multiple evaluation samples (SP) according to the results of the above step (b-2) and selecting a candidate sample (CP) suitable for the target to be used in the field map.
  • SP evaluation samples
  • CP candidate sample
  • step (b-3) when the number of candidate samples (CP) selected is 2, the fourth evaluation sample (SP4) and the second evaluation sample (SP2) with lower output values can be selected as candidate samples (CP).
  • the above step (b-4) is a step of re-selecting the targets constituting the candidate sample (CP) as acquisition targets (O).
  • marks 1, 2, 3, and 5, which are targets constituting the second evaluation sample (SP2) selected as the candidate sample (CP) in the previous step, and marks 1, 3, 4, and 5, which are targets constituting the fourth evaluation sample (SP4), can be selected as respective acquisition targets (O).
  • step (b) can be repeated until a preset quantity of the measurement targets are selected. That is, steps (b-1) to (b-4) can be sequentially repeated.
  • the step (2b-1) may include regenerating the plurality of evaluation samples (SP) formed by combinations of different targets among marks 1, 2, 3, and 5 obtained in the (b-4) step.
  • SP evaluation samples
  • marks 1, 2, and 3 are generated as a 2-1 evaluation sample (SP2-1), marks 1, 2, and 5 are generated as a 2-2 evaluation sample (SP2-2), marks 1, 3, and 5 are generated as a 2-3 evaluation sample (SP2-3), and marks 2, 3, and 5 are generated as a 2-4 evaluation sample (SP2-4), and except for one target among the marks 1, 3, 4, and 5, marks 1, 3, and 4 are generated as a 4-1 evaluation sample (SP4-1), marks 1, 3, and 5 are generated as a 4-2 evaluation sample (SP4-2), marks 1, 4, and 5 are generated as a 4-3 evaluation sample (SP4-3), and marks 3, 4, and 5 are generated as a 4-4 evaluation sample. You can regenerate the evaluation sample by generating a sample (SP4-4).
  • (2b-2) a step of performing a suitability evaluation (FF) on each of the re-generated evaluation samples and performing an evaluation on each evaluation sample by applying a preset suitability evaluation (FF) to a plurality of evaluation samples (SP), (2b-3) a step of selecting a preset number of candidate samples (CP) in the order of suitability evaluation among the plurality of evaluation samples (SP), and (2b-4) a step of re-selecting targets constituting the candidate samples (CP) as acquisition targets (O).
  • FF suitability evaluation
  • the step (c) above is a step for selecting targets constituting candidate samples (CP) as measurement targets to be used in a field map of an overlay measurement recipe, as illustrated in FIG. 4. Specifically, the step (c) may select a candidate sample with the best result of a suitability assessment (FF) among the candidate samples (CP) selected in the step (b) as the measurement target.
  • FF suitability assessment
  • the step (b) above is repeated while removing targets one by one until the number of targets constituting the plurality of evaluation samples (SP) is reduced by a preset number, and when the number is reduced by the preset number in the step (c), the remaining targets can be selected as measurement targets (OP).
  • marks 1, 2, and 5 of the 2-2 evaluation sample (SP2-2) with the best results in the suitability evaluation (FF) among the acquisition targets (O) selected in the previous step can be selected as measurement targets (OP).
  • FIGS. 6 and 7 are flowcharts showing a target selection method of an overlay measuring device according to other embodiments of the present invention
  • FIG. 9 is a diagram schematically showing a verification step (d) in a target selection method of an overlay measuring device according to other embodiments of the present invention.
  • a method for selecting a target of an overlay measurement device may include a step of (d) verifying a measurement target.
  • step (d) above a step of preparing a wafer required for verification may be included.
  • the step (d) above is a step for verifying whether the measurement target (OP) is a target to be used in the field map of the overlay measurement recipe by comparing the training set (TS) used to select the measurement target (OP) in the steps (a), (b), and (c) after the step (c) with the comparison wafer (VS, Validation set) that did not perform the steps (a), (b), and (c).
  • the step (d) may include: (d-1) a step of performing a suitability evaluation (FF) on a measurement target (OP) of a learning wafer (TS), (d-2) a step of performing a suitability evaluation (FF) on a target corresponding to a measurement target in a comparison wafer (VS), (d-3) a step of performing a suitability evaluation (FF) on an arbitrary target of the comparison wafer (VS), and (d-4) a step of comparing.
  • the above step (d-1) is a step of performing a suitability assessment (FF) on the measurement target (OP) selected in the above step (c) among the multiple overlay targets formed on the learning wafer (TS).
  • FF suitability assessment
  • a first verification value can be calculated as a suitability evaluation (FF) for the measurement target (OP) in the learning wafer (TS).
  • a suitability evaluation (FF) can be performed on a learning wafer (TS) in which a measurement target (OP) is selected.
  • the result value is the 1st Fitness value, which can be the first verification value.
  • the above step (d-2) is a step for performing a suitability assessment (FF) on a target formed at the same location as the measurement target (OP) selected in the above step (c), among a plurality of overlay targets formed on a comparison wafer (VS).
  • FF suitability assessment
  • a suitability assessment (FF) can be performed on a target at a location corresponding to the measurement target (OP) in the comparison wafer (VS) to produce a second verification value.
  • a suitability evaluation (FF) can be performed on a target at the same location as a measurement target (OP) selected in a learning wafer (TS).
  • the result value can be the second fitness value, which can be the second verification value.
  • the above step (d-3) is a step of performing a suitability assessment (FF) on an arbitrary target among a plurality of overlay targets formed on a comparison wafer (VS).
  • a suitability assessment (FF) can be performed on a preset or arbitrary target on a comparison wafer (VS) to produce a third verification value.
  • a suitability evaluation can be performed on a target at a location specified by an automatic recipe optimization program.
  • the result value can be the third fitness value, which can be the third verification value.
  • the above step (d-4) is a step for comparing the results of the suitability assessment produced in the above steps (d-1), (d-2), and (d-3).
  • the step (d-4) is a step of comparing the first verification value, the second verification value, and the third verification value.
  • the measurement target (OP) selected in the step (c) can be determined as the sample target with the highest reliability among the multiple overlay targets (T).
  • FIG. 10 is a drawing showing a parameter evaluation of suitability assessment in a target selection method of an overlay measuring device according to the present invention
  • FIG. 11 is a drawing showing an overlay measurement evaluation of suitability assessment
  • FIG. 12 is a table showing suitability assessment for a plurality of evaluation samples.
  • the suitability assessment may include parameter assessment and overlay measurement assessment.
  • the above parameter evaluation can be produced as an overlay modeling result of multiple evaluation samples (SP).
  • the above parameter evaluation can calculate the average and standard deviation of the plurality of element values calculated through the plurality of element values affecting the overlay measurement of the plurality of overlay targets (T) formed on the wafer (W) and the plurality of element values affecting the overlay measurement of the targets constituting the plurality of evaluation samples (SP).
  • a plurality of element values (Cofficient) affecting the overlay measurement of an initial sample (Dense) that samples a plurality of overlay targets (T) formed on a wafer (W) can be calculated, and then a plurality of element values affecting the overlay measurement of an evaluation sample (Plan1), which is a plurality of evaluation samples (SP), can be calculated.
  • an evaluation sample which is a plurality of evaluation samples (SP)
  • the parameter evaluation can configure a matrix in which all element values except for the element value (Coefficient) to be confirmed are set to 0 in order to compensate for the difference in element values according to the location of the target formed on the wafer (W).
  • the parameter evaluation may store the average of the overlay measurement values calculated by setting the remaining element values except for at least one element value among the plurality of element values to 0 as the first evaluation value, and store the standard deviation of the overlay measurement values as the second evaluation value.
  • the other element values except for the first element value (Corff 1) are set to 0, and the other element values except for the nth element value (Corff n) are set to 0, so that the nth overlay value according to the nth element value can be measured.
  • the average of all overlay values can be calculated as the first evaluation value of the parameter evaluation, and the standard deviation can be calculated as the second evaluation value of the parameter evaluation.
  • the above multiple element values may include an offset value indicating a difference in coordinate values between the center of a reference wafer and the center of a current wafer, a rotation value indicating a degree of rotation from the reference of the X-axis or Y-axis, a magnification value indicating a degree of wafer expansion for detecting defects occurring at the wafer edge, and an orthogonality indicating an angle formed by the X-axis and the Y-axis.
  • the above overlay measurement evaluation can be calculated as the difference between the acquisition target (O) and the targets constituting the multiple evaluation samples (SP).
  • the above overlay measurement evaluation can store an average of the difference values calculated through the overlay output values produced from the plurality of overlay targets (T) formed on the wafer (W) and the overlay output values produced from the targets constituting the plurality of evaluation samples (SP) as a third evaluation value, and store the standard deviation of the difference values as a fourth evaluation value.
  • an overlay measurement evaluation may be performed by applying the 3-sigma rule (Mean+3Sigma) to an initial sample (Dense) that is a plurality of overlay targets (T) formed on a wafer (W) as a sample, and then the overlay measurement evaluation may be performed by applying the 3-sigma rule (Mean+3Sigma) to an evaluation sample (Plan1) that is a plurality of evaluation samples (SP).
  • the 3-sigma rule Mean+3Sigma
  • the plurality of evaluation samples can be evaluated using the first evaluation value, the second evaluation value, the third evaluation value, and the fourth evaluation value calculated through the parameter evaluation and the overlay measurement evaluation, and at least one evaluation sample can be selected based on the evaluation.
  • the parameter evaluation may be performed to align the order of a plurality of evaluation samples (SP) and assign a set score according to the order
  • the overlay measurement evaluation may be performed to align the order of a plurality of evaluation samples (SP) and assign a set score according to the order.
  • the scores of each evaluation sample are added up, and at least one evaluation sample among multiple evaluation samples (SP) can be selected based on the added score.
  • one evaluation sample may be selected from a total of four evaluation samples, including a first evaluation sample (Plan1), a second evaluation sample (Plan2), a third evaluation sample (Plan3), and a fourth evaluation sample (Plan4).
  • the third evaluation value (M-O), which is the average of the overlay measurement evaluation, and the fourth evaluation value (M-O), which is the standard deviation of the overlay measurement evaluation were arranged in order to calculate a score, and the total sum of the evaluation values was added up so that the first evaluation sample (Plan1) had the smallest value.
  • a target selection system of an overlay measuring device may include an overlay measuring device (1000).
  • the overlay measuring device (1000) may include a light source unit (100), a lens unit (200), a detection unit (300), and a control unit (400), and each component may control the operation of each component of the overlay measuring device (1000) by a processor including commands, programs, logic, etc.
  • the target selection system of the overlay measuring device of the present invention can transmit data or signals to one overlay measuring device (1000) through a user terminal, or can simultaneously transmit data or signals to multiple overlay measuring devices.
  • the above user terminal is included in the control unit (400) of the overlay measuring device (1000) and can transmit and receive data with the light source unit (100), lens unit (200), detection unit (300), and other components of the control unit (400) of the overlay measuring device (1000), or the user terminal is configured as a separate device connected to the overlay measuring device (1000) with or without wires and can transmit and receive data with the overlay measuring device (1000).
  • Recipe information regarding the operation of the overlay measuring device (1000) for measuring the characteristics of a wafer (W) can be input from a user through the user terminal.
  • the automatic measuring program can input values for a plurality of parameters for measuring the characteristics of a wafer from a user through the user terminal.
  • the overlay measuring device (1000) operates in conjunction with the user terminal through installed measuring software (e.g., overlay application), and may include commands for operating the overlay measuring device (1000) based on data (e.g., recipe information) received from the user terminal.
  • installed measuring software e.g., overlay application
  • data e.g., recipe information
  • FIGS. 13 and 14 are schematic drawings illustrating a target selection system of an overlay measuring device according to various embodiments of the present invention.
  • the target selection system of the overlay measurement device may include an acquisition target selection unit (450), a candidate sample selection unit (460), and a measurement target selection unit (470), as illustrated in FIG. 13.
  • the acquisition target selection unit (450) can select a plurality of overlay targets (T) formed on a wafer (W) as acquisition targets.
  • the candidate sample selection unit (460) can perform a suitability evaluation (FF) on each of a plurality of evaluation samples (SP) formed as different targets among the acquisition targets (O) to select at least one candidate sample (CP) among the plurality of evaluation samples (SP).
  • FF suitability evaluation
  • the candidate sample selection unit (460) may include an evaluation sample generation unit (461), an evaluation unit (462), a sorting unit (463), and a transformation unit (464).
  • the evaluation sample generation unit (461) can generate a plurality of evaluation samples formed by combinations of different targets among the remaining targets, excluding at least one target from among the acquisition targets selected in the previous step.
  • the evaluation sample generation unit (461) can generate a plurality of first evaluation samples by combinations of acquisition targets (O) selected by the acquisition target selection unit (450).
  • the evaluation unit (462) can perform a suitability evaluation (FF) on each of a plurality of evaluation samples (SP).
  • the evaluation unit (462) can perform a suitability evaluation (FF) on the plurality of first evaluation samples generated by the evaluation sample generation unit (461).
  • FF suitability evaluation
  • the evaluation unit (462) of the candidate sample selection unit (460) can perform a suitability evaluation (FF) composed of a parameter evaluation and an acquisition target (O) calculated as an overlay modeling result value of a plurality of evaluation samples (SP) and an overlay measurement evaluation calculated as a difference between targets constituting the plurality of evaluation samples (SP).
  • FF suitability evaluation
  • SP overlay modeling result value of a plurality of evaluation samples
  • SP overlay measurement evaluation
  • the parameter evaluation may calculate an average and a standard deviation of the plurality of element values calculated through a plurality of element values affecting the overlay measurement of a plurality of overlay targets (T) formed on a wafer (W) and a plurality of element values affecting the overlay measurement of targets constituting a plurality of evaluation samples (SP), and may store an average of the overlay measurement values calculated by excluding at least one element value among the plurality of element values and setting the remaining element values to 0 as a first evaluation value, and may store the standard deviation of the overlay measurement values as a second evaluation value.
  • the above overlay measurement evaluation can store the average of the difference values calculated through the overlay output values produced from the plurality of overlay targets (T) formed on the wafer (W) and the overlay output values produced from the targets constituting the plurality of evaluation samples (SP) as a third evaluation value, and store the standard deviation of the difference values as a fourth evaluation value.
  • the sorting unit (463) can select a preset number of candidate samples (CP) in the order of suitability evaluation (FF) among a plurality of evaluation samples (SP).
  • the alignment unit (463) is a step of aligning a plurality of first evaluation samples in an order suitable for a target to be used in a field map of an overlay measurement recipe according to the results of the plurality of first evaluation samples produced by the suitability evaluation (FF) in the evaluation unit (462), and selecting at least one first candidate sample. At this time, a preset number of the first candidate samples may be selected.
  • the sorting unit (463) of the candidate sample selection unit (460) can perform the parameter evaluation to sort the order of a plurality of evaluation samples (SP) and assign a set score according to the order, perform the overlay measurement evaluation to sort the order of a plurality of evaluation samples (SP) and assign a set score according to the order, add up the scores of each evaluation sample, and select at least one evaluation sample among the plurality of evaluation samples (SP) as a candidate sample (CP) according to the summed score.
  • the conversion unit (464) can re-select targets constituting the candidate sample (CP) as acquisition targets.
  • the transformation unit (464) can re-select targets constituting at least one of the first candidate samples re-selected in the sorting unit (463) as acquisition targets (O).
  • a plurality of second evaluation samples are generated from the re-selected acquisition targets (O) in the evaluation sample generation unit (461), the evaluation unit (462) calculates a score of the suitability evaluation (FF) for the plurality of second evaluation samples, the sorting unit (463) selects at least a number of second candidate samples in the same manner as when the first candidate samples were selected, and the conversion unit (464) can re-select the targets constituting the second candidate samples as the acquisition targets (O).
  • the candidate sample selection unit (460) can be repeated until x measurement targets (OP) are selected. That is, the evaluation sample generation unit (461) generates a plurality of m-th evaluation samples, and at this time, the number of targets constituting each evaluation sample among the plurality of m-th evaluation samples can be formed as (n-m).
  • n is the number of all targets formed on the wafer (W).
  • the evaluation unit (462) calculates a score of the mth suitability evaluation for the plurality of mth evaluation samples
  • the sorting unit (463) can select at least one mth candidate sample formed of (n-m) targets
  • the conversion unit (464) can re-select a target of the mth candidate sample formed of (n-m) targets as an acquisition target.
  • the measurement target selection unit (470) can select measurement targets to be used in the field map of the overlay measurement recipe from among targets constituting the candidate sample (CP).
  • the measurement target selection unit (470) can select the candidate sample with the best result of the suitability assessment (FF) among the candidate samples (CP) selected by the candidate sample selection unit (460) as the measurement target (OP).
  • the candidate sample selection unit (460) is repeated to remove targets one by one until a preset number of targets constituting a plurality of evaluation samples (SP) is reached, and when x targets remain in the candidate sample selection unit (460), the target of the mth candidate sample with the best suitability evaluation (FF) can be selected as the measurement target (OP).
  • the measurement target (OP) is x, which is a preset preset number, and when the number of overlay targets (T) formed on the wafer (W) is n, the candidate sample selection unit (460) is repeated m times to reduce the number of targets to x, so x can be (n-m).
  • the target selection system of the overlay measurement device may include a verification unit (480).
  • the verification unit (480) can compare the learning wafer (TS) used to select the measurement target (OP) in the acquisition target selection unit (450), the candidate sample selection unit (460), and the measurement target selection unit (470) with the comparison wafer (VS) for which the measurement target (OP) has not been selected, to verify whether the measurement target (OP) is a target to be used in the field map of the overlay measurement recipe.
  • TS learning wafer
  • VS comparison wafer
  • the verification unit (480) may include a first evaluation unit (481) that performs a suitability evaluation (FF) on a measurement target (OP) selected by the measurement target selection unit (470) among a plurality of overlay targets (T) formed on a learning wafer (TS), a second evaluation unit (482) that performs a suitability evaluation (FF) on a target formed at the same position as the measurement target (OP) selected by the measurement target selection unit (470) among a plurality of overlay targets formed on a comparison wafer (VS), a third evaluation unit (483) that performs a suitability evaluation (FF) on an arbitrary target among a plurality of overlay targets formed on the comparison wafer (VS), and a comparison unit (484) that compares the results of the suitability evaluations produced by the first evaluation unit (5100), the second evaluation unit (5200), and the third evaluation unit (5300).
  • a first evaluation unit (481) that performs a suitability evaluation (FF) on a measurement target (OP) selected by the measurement target selection unit (470) among
  • the target selection method of the overlay measurement device and the target selection system of the overlay measurement device of the present invention can select the most similar representative target that can replace all targets formed on a wafer, and the reliability of the selected overlay targets can be improved.
  • wafer overlay measurement can be performed using only representative targets formed on the wafer, shortening the wafer overlay measurement time and increasing productivity.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

La présente invention concerne un procédé de sélection de cible d'échantillon de revêtement. Selon un mode de réalisation de la présente invention, l'invention concerne un procédé permettant de sélectionner une cible d'un dispositif de métrologie de recouvrement. Le procédé de sélection de cible de dispositif de mesure de recouvrement comprend les étapes suivantes : (a) une étape consistant à sélectionner, en tant que cibles d'acquisition, une pluralité de cibles de recouvrement formées sur une tranche; (b) une étape consistant à effectuer une évaluation d'adéquation sur chacun d'une pluralité d'échantillons d'évaluation formés de différentes cibles parmi les cibles d'acquisition, et à sélectionner ainsi au moins un échantillon candidat parmi la pluralité d'échantillons d'évaluation; et (c) une étape consistant à sélectionner des cibles constituant les échantillons candidats en tant que cibles de métrologie à utiliser dans une carte de champ d'une formule de métrologie de recouvrement.
PCT/KR2024/011370 2023-08-16 2024-08-02 Procédé de sélection de cible de dispositif de métrologie de recouvrement et système de sélection de cible de dispositif de métrologie de recouvrement Pending WO2025037807A1 (fr)

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